CN1766162A - 气体泄漏探测器及制程气体监控 - Google Patents

气体泄漏探测器及制程气体监控 Download PDF

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Publication number
CN1766162A
CN1766162A CNA2005101087427A CN200510108742A CN1766162A CN 1766162 A CN1766162 A CN 1766162A CN A2005101087427 A CNA2005101087427 A CN A2005101087427A CN 200510108742 A CN200510108742 A CN 200510108742A CN 1766162 A CN1766162 A CN 1766162A
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CN
China
Prior art keywords
chamber
gases
gas
controller
mass spectrometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005101087427A
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English (en)
Chinese (zh)
Inventor
塞缪尔·梁
乌尔里希·A·邦内
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1766162A publication Critical patent/CN1766162A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Examining Or Testing Airtightness (AREA)
CNA2005101087427A 2004-10-12 2005-09-29 气体泄漏探测器及制程气体监控 Pending CN1766162A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61771404P 2004-10-12 2004-10-12
US60/617,714 2004-10-12
US11/087,193 2005-03-23

Publications (1)

Publication Number Publication Date
CN1766162A true CN1766162A (zh) 2006-05-03

Family

ID=36742271

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005101087427A Pending CN1766162A (zh) 2004-10-12 2005-09-29 气体泄漏探测器及制程气体监控

Country Status (5)

Country Link
US (1) US20060075968A1 (https=)
JP (1) JP2006121072A (https=)
KR (1) KR20060092966A (https=)
CN (1) CN1766162A (https=)
TW (1) TWI277164B (https=)

Cited By (5)

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CN103069551A (zh) * 2010-08-26 2013-04-24 东京毅力科创株式会社 等离子体处理装置和光学监视装置
CN103855048A (zh) * 2012-12-06 2014-06-11 英飞康公司 使用残余气体分析仪的真空室测量
CN107367356A (zh) * 2016-05-11 2017-11-21 塞米西斯科株式会社 腔体泄漏检测方法及其装置
CN107591344A (zh) * 2016-07-06 2018-01-16 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法

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WO2007142850A2 (en) * 2006-06-02 2007-12-13 Applied Materials Gas flow control by differential pressure measurements
JP5043394B2 (ja) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 蒸着装置およびその運転方法
JP5016031B2 (ja) * 2007-05-15 2012-09-05 株式会社アルバック 質量分析ユニット
JP5840237B2 (ja) * 2011-03-16 2016-01-06 ノルデン・マシーナリー・アーベー 漏れ検出方法および装置
DE102012200211A1 (de) * 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
US9209040B2 (en) * 2013-10-11 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphorus silicon insertion for STI-CMP planarity improvement
US9412619B2 (en) * 2014-08-12 2016-08-09 Applied Materials, Inc. Method of outgassing a mask material deposited over a workpiece in a process tool
CN104297423B (zh) * 2014-09-23 2015-12-02 京东方科技集团股份有限公司 检测装置和检测方法
KR101650887B1 (ko) * 2015-02-12 2016-08-25 주식회사 비스텔 반도체 제조 공정에서 통계적 방법을 이용하여, 가스 누출을 감지하는 방법 장치
DE102016205381B4 (de) * 2016-03-31 2023-11-30 Inficon Gmbh Gaslecksuche mit einer Testgassprühvorrichtung
US10930535B2 (en) * 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US20190109029A1 (en) * 2017-10-05 2019-04-11 Globalfoundries Inc. Methods, Apparatus and System for Dose Control for Semiconductor Wafer Processing
US11111937B2 (en) * 2018-06-29 2021-09-07 The Boeing Company Fault prediction in hydraulic systems
KR102541181B1 (ko) * 2018-09-21 2023-06-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치, 프로그램, 기판 처리 방법 및 리크 체크 방법
US10985059B2 (en) * 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication
US11512389B2 (en) * 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
US11635338B2 (en) * 2020-10-23 2023-04-25 Applied Materials, Inc. Rapid chamber vacuum leak check hardware and maintenance routine
CN117413352A (zh) * 2021-05-11 2024-01-16 Vat控股公司 真空处理系统和处理控制
US12469751B2 (en) * 2021-06-03 2025-11-11 Applied Materials, Inc. Apparatus to detect and quantify radical concentration in semiconductor processing systems
EP4430651A4 (en) * 2021-11-12 2025-10-15 Mks Instr Inc METHODS AND SYSTEMS FOR FEEDBACK CONTROL IN PLASMA PROCESSING USING RADICAL DETECTION

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069551A (zh) * 2010-08-26 2013-04-24 东京毅力科创株式会社 等离子体处理装置和光学监视装置
CN103855048A (zh) * 2012-12-06 2014-06-11 英飞康公司 使用残余气体分析仪的真空室测量
CN103855048B (zh) * 2012-12-06 2019-03-05 英飞康公司 使用残余气体分析仪的真空室测量
CN107367356A (zh) * 2016-05-11 2017-11-21 塞米西斯科株式会社 腔体泄漏检测方法及其装置
CN107591344A (zh) * 2016-07-06 2018-01-16 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN107591344B (zh) * 2016-07-06 2022-05-27 北京北方华创微电子装备有限公司 工艺室气氛检测方法和晶片加工设备
CN110894599A (zh) * 2018-09-13 2020-03-20 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法
CN110894599B (zh) * 2018-09-13 2022-02-11 中国建筑材料科学研究总院有限公司 等离子体化学气相沉积系统及方法

Also Published As

Publication number Publication date
TWI277164B (en) 2007-03-21
KR20060092966A (ko) 2006-08-23
TW200612511A (en) 2006-04-16
US20060075968A1 (en) 2006-04-13
JP2006121072A (ja) 2006-05-11

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Open date: 20060503