CN1764738B - 用于在平坦表面上沉积大面积涂层的设备和方法 - Google Patents
用于在平坦表面上沉积大面积涂层的设备和方法 Download PDFInfo
- Publication number
- CN1764738B CN1764738B CN03826341.6A CN03826341A CN1764738B CN 1764738 B CN1764738 B CN 1764738B CN 03826341 A CN03826341 A CN 03826341A CN 1764738 B CN1764738 B CN 1764738B
- Authority
- CN
- China
- Prior art keywords
- plasma
- mouth
- plasma body
- reactant gases
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2003/005209 WO2004076716A1 (en) | 2003-02-20 | 2003-02-20 | Apparatus and method for depositing large area coatings on planar surfaces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1764738A CN1764738A (zh) | 2006-04-26 |
| CN1764738B true CN1764738B (zh) | 2015-04-08 |
Family
ID=32925324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN03826341.6A Expired - Fee Related CN1764738B (zh) | 2003-02-20 | 2003-02-20 | 用于在平坦表面上沉积大面积涂层的设备和方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1597409A1 (https=) |
| JP (1) | JP2006514161A (https=) |
| KR (1) | KR100977955B1 (https=) |
| CN (1) | CN1764738B (https=) |
| AU (1) | AU2003211169A1 (https=) |
| WO (1) | WO2004076716A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743524B2 (en) * | 2002-05-23 | 2004-06-01 | General Electric Company | Barrier layer for an article and method of making said barrier layer by expanding thermal plasma |
| US7521653B2 (en) * | 2004-08-03 | 2009-04-21 | Exatec Llc | Plasma arc coating system |
| WO2008083301A1 (en) | 2006-12-28 | 2008-07-10 | Exatec, Llc | Apparatus and method for plasma arc coating |
| WO2008144658A1 (en) | 2007-05-17 | 2008-11-27 | Exatec, Llc | Apparatus and method for depositing multiple coating materials in a common plasma coating zone |
| CN102618846B (zh) * | 2012-04-18 | 2014-04-09 | 南京航空航天大学 | 一种多炬等离子体喷射cvd法沉积超硬膜的方法及装置 |
| EP2784175A1 (fr) * | 2013-03-28 | 2014-10-01 | NeoCoat SA | Equipement de dépôt de diamant en phase vapeur |
| CN103924210A (zh) * | 2014-04-24 | 2014-07-16 | 无锡元坤新材料科技有限公司 | 一种等离子体沉积装置及金刚石涂层的制备方法 |
| KR20170082611A (ko) | 2014-11-10 | 2017-07-14 | 슈퍼리어 인더스트리즈 인터내셔널, 아이엔씨. | 합금 휠을 코팅하는 방법 |
| US12454759B2 (en) | 2014-11-10 | 2025-10-28 | Superior Industries International, Inc. | Method of coating alloy wheels using inter-coat plasma |
| CN107881485B (zh) * | 2017-11-01 | 2019-10-01 | 深圳市华星光电半导体显示技术有限公司 | 等离子体增强化学气相沉积设备及oled面板的封装方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365016B1 (en) * | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
| US6397776B1 (en) * | 2001-06-11 | 2002-06-04 | General Electric Company | Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772341B2 (ja) * | 1991-02-21 | 1995-08-02 | 中外炉工業株式会社 | 圧力勾配型プラズマガンによるプラズマ発生装置 |
| US6681716B2 (en) * | 2001-11-27 | 2004-01-27 | General Electric Company | Apparatus and method for depositing large area coatings on non-planar surfaces |
| US6948448B2 (en) * | 2001-11-27 | 2005-09-27 | General Electric Company | Apparatus and method for depositing large area coatings on planar surfaces |
| JP2003268556A (ja) * | 2002-03-08 | 2003-09-25 | Sumitomo Heavy Ind Ltd | プラズマ処理装置 |
-
2003
- 2003-02-20 EP EP03816093A patent/EP1597409A1/en not_active Withdrawn
- 2003-02-20 AU AU2003211169A patent/AU2003211169A1/en not_active Abandoned
- 2003-02-20 JP JP2004568825A patent/JP2006514161A/ja active Pending
- 2003-02-20 WO PCT/US2003/005209 patent/WO2004076716A1/en not_active Ceased
- 2003-02-20 CN CN03826341.6A patent/CN1764738B/zh not_active Expired - Fee Related
- 2003-02-20 KR KR1020057015386A patent/KR100977955B1/ko not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365016B1 (en) * | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
| US6397776B1 (en) * | 2001-06-11 | 2002-06-04 | General Electric Company | Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators |
Non-Patent Citations (1)
| Title |
|---|
| SMIT C ET AL..Fast deposition of microcrystalline silicon with an expandingthermal plasma.JOURNAL OF NON-CRYSTALLINE SOLIDS299-302.2002,299-30299. * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100977955B1 (ko) | 2010-08-24 |
| AU2003211169A1 (en) | 2004-09-17 |
| JP2006514161A (ja) | 2006-04-27 |
| EP1597409A1 (en) | 2005-11-23 |
| KR20050113186A (ko) | 2005-12-01 |
| CN1764738A (zh) | 2006-04-26 |
| WO2004076716A1 (en) | 2004-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHABO BASE CREATION PLASTICS INTELLECTUAL PROPERT Free format text: FORMER OWNER: GENERAL ELECTRIC CO. Effective date: 20081107 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Bergen Op Zoom Holland Applicant after: Sabic Innovative Plastics Ip Address before: American New York Applicant before: General Electric Company |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SABIC INNOVATIVE PLASTICS IP Free format text: FORMER NAME: SABIC INNOVATIVE PLASTICS IP |
|
| CP03 | Change of name, title or address |
Address after: Holland city Aupu zoom Bergen Patentee after: Sabic Innovative Plastics IP Address before: Bergen Op Zoom Holland Patentee before: Sabic Innovative Plastics Ip |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20190220 |