KR100977955B1 - 큰 면적의 코팅재를 평면에 침착시키기 위한 장치 및 방법 - Google Patents

큰 면적의 코팅재를 평면에 침착시키기 위한 장치 및 방법 Download PDF

Info

Publication number
KR100977955B1
KR100977955B1 KR1020057015386A KR20057015386A KR100977955B1 KR 100977955 B1 KR100977955 B1 KR 100977955B1 KR 1020057015386 A KR1020057015386 A KR 1020057015386A KR 20057015386 A KR20057015386 A KR 20057015386A KR 100977955 B1 KR100977955 B1 KR 100977955B1
Authority
KR
South Korea
Prior art keywords
plasma
orifices
reactant
depositing
reactant gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057015386A
Other languages
English (en)
Korean (ko)
Other versions
KR20050113186A (ko
Inventor
마크 샙켄즈
Original Assignee
사빅 이노베이티브 플라스틱스 아이피 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사빅 이노베이티브 플라스틱스 아이피 비.브이. filed Critical 사빅 이노베이티브 플라스틱스 아이피 비.브이.
Publication of KR20050113186A publication Critical patent/KR20050113186A/ko
Application granted granted Critical
Publication of KR100977955B1 publication Critical patent/KR100977955B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057015386A 2003-02-20 2003-02-20 큰 면적의 코팅재를 평면에 침착시키기 위한 장치 및 방법 Expired - Fee Related KR100977955B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/005209 WO2004076716A1 (en) 2003-02-20 2003-02-20 Apparatus and method for depositing large area coatings on planar surfaces

Publications (2)

Publication Number Publication Date
KR20050113186A KR20050113186A (ko) 2005-12-01
KR100977955B1 true KR100977955B1 (ko) 2010-08-24

Family

ID=32925324

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057015386A Expired - Fee Related KR100977955B1 (ko) 2003-02-20 2003-02-20 큰 면적의 코팅재를 평면에 침착시키기 위한 장치 및 방법

Country Status (6)

Country Link
EP (1) EP1597409A1 (https=)
JP (1) JP2006514161A (https=)
KR (1) KR100977955B1 (https=)
CN (1) CN1764738B (https=)
AU (1) AU2003211169A1 (https=)
WO (1) WO2004076716A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743524B2 (en) * 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
US7521653B2 (en) * 2004-08-03 2009-04-21 Exatec Llc Plasma arc coating system
WO2008083301A1 (en) 2006-12-28 2008-07-10 Exatec, Llc Apparatus and method for plasma arc coating
WO2008144658A1 (en) 2007-05-17 2008-11-27 Exatec, Llc Apparatus and method for depositing multiple coating materials in a common plasma coating zone
CN102618846B (zh) * 2012-04-18 2014-04-09 南京航空航天大学 一种多炬等离子体喷射cvd法沉积超硬膜的方法及装置
EP2784175A1 (fr) * 2013-03-28 2014-10-01 NeoCoat SA Equipement de dépôt de diamant en phase vapeur
CN103924210A (zh) * 2014-04-24 2014-07-16 无锡元坤新材料科技有限公司 一种等离子体沉积装置及金刚石涂层的制备方法
KR20170082611A (ko) 2014-11-10 2017-07-14 슈퍼리어 인더스트리즈 인터내셔널, 아이엔씨. 합금 휠을 코팅하는 방법
US12454759B2 (en) 2014-11-10 2025-10-28 Superior Industries International, Inc. Method of coating alloy wheels using inter-coat plasma
CN107881485B (zh) * 2017-11-01 2019-10-01 深圳市华星光电半导体显示技术有限公司 等离子体增强化学气相沉积设备及oled面板的封装方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6397776B1 (en) 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772341B2 (ja) * 1991-02-21 1995-08-02 中外炉工業株式会社 圧力勾配型プラズマガンによるプラズマ発生装置
US6365016B1 (en) * 1999-03-17 2002-04-02 General Electric Company Method and apparatus for arc plasma deposition with evaporation of reagents
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
US6948448B2 (en) * 2001-11-27 2005-09-27 General Electric Company Apparatus and method for depositing large area coatings on planar surfaces
JP2003268556A (ja) * 2002-03-08 2003-09-25 Sumitomo Heavy Ind Ltd プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6397776B1 (en) 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators

Also Published As

Publication number Publication date
CN1764738B (zh) 2015-04-08
AU2003211169A1 (en) 2004-09-17
JP2006514161A (ja) 2006-04-27
EP1597409A1 (en) 2005-11-23
KR20050113186A (ko) 2005-12-01
CN1764738A (zh) 2006-04-26
WO2004076716A1 (en) 2004-09-10

Similar Documents

Publication Publication Date Title
US6948448B2 (en) Apparatus and method for depositing large area coatings on planar surfaces
US6681716B2 (en) Apparatus and method for depositing large area coatings on non-planar surfaces
US6397776B1 (en) Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
EP1664378B1 (en) Deposition method using a thermal plasma expanded by a replaceable plate
US5204144A (en) Method for plasma deposition on apertured substrates
KR101842675B1 (ko) 플라즈마 처리를 위한 장치 및 방법
EP2148939B1 (de) Vakuumbehandlungsanlage und vakuumbehandlungsverfahren
US8747963B2 (en) Apparatus and method for diamond film growth
US20100024729A1 (en) Methods and apparatuses for uniform plasma generation and uniform thin film deposition
US20060096540A1 (en) Apparatus to manufacture semiconductor
JP2004235660A (ja) 単一ボデー噴射器及び蒸着室
KR100977955B1 (ko) 큰 면적의 코팅재를 평면에 침착시키기 위한 장치 및 방법
CN105154856A (zh) 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
JPH06314660A (ja) 薄膜形成法及びその装置
US11610764B2 (en) Plasma source and method of operating the same
KR20070103465A (ko) 고온 화학 증기 증착 장치
JPH06275545A (ja) ガスクラスターイオン援用による化合物薄膜の 形成方法
KR20040046571A (ko) 이온빔을 이용한 재료의 표면 처리 장치
US20030098367A1 (en) Processes and systems for determining the identity of metal alloys
JP2006514161A5 (https=)
CN100517553C (zh) 用于膨胀热等离子体的电感耦合的系统和方法
Jansen et al. Thin film deposition on inside surfaces by plasma enhanced chemical vapor deposition
Schaepkens et al. High-rate deposition of abrasion resistant coatings using a dual-source expanding thermal plasma reactor
KR102819061B1 (ko) 기판처리장치 및 기판처리방법
JPS63118075A (ja) グロ−放電による被覆方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20130723

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20140722

Year of fee payment: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20150717

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20160720

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170719

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20180718

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190819

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190819

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000