CN1753301A - 高频功率放大组件 - Google Patents
高频功率放大组件 Download PDFInfo
- Publication number
- CN1753301A CN1753301A CNA2005100897319A CN200510089731A CN1753301A CN 1753301 A CN1753301 A CN 1753301A CN A2005100897319 A CNA2005100897319 A CN A2005100897319A CN 200510089731 A CN200510089731 A CN 200510089731A CN 1753301 A CN1753301 A CN 1753301A
- Authority
- CN
- China
- Prior art keywords
- enlarging section
- power amplifier
- frequency power
- amplifier module
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000009471 action Effects 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 235000008694 Humulus lupulus Nutrition 0.000 description 1
- 244000025221 Humulus lupulus Species 0.000 description 1
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004272945A JP2006093773A (ja) | 2004-09-21 | 2004-09-21 | 高周波電力増幅モジュール |
JP2004272945 | 2004-09-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1753301A true CN1753301A (zh) | 2006-03-29 |
CN100533952C CN100533952C (zh) | 2009-08-26 |
Family
ID=36073339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100897319A Expired - Fee Related CN100533952C (zh) | 2004-09-21 | 2005-08-05 | 高频功率放大组件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7408405B2 (zh) |
JP (1) | JP2006093773A (zh) |
CN (1) | CN100533952C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7769355B2 (en) * | 2005-01-19 | 2010-08-03 | Micro Mobio Corporation | System-in-package wireless communication device comprising prepackaged power amplifier |
JP2006333060A (ja) * | 2005-05-26 | 2006-12-07 | Renesas Technology Corp | 高周波電力増幅及びそれを用いた無線通信装置 |
JP4521440B2 (ja) * | 2007-12-18 | 2010-08-11 | 株式会社東芝 | アレイアンテナ装置及びその送受信モジュール |
JP5510122B2 (ja) * | 2010-06-30 | 2014-06-04 | アイコム株式会社 | 高周波回路 |
JP5519558B2 (ja) | 2011-03-10 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 高周波電力増幅装置 |
US9130530B2 (en) * | 2013-02-01 | 2015-09-08 | Rf Micro Devices, Inc. | Gain synchronization circuitry for synchronizing a gain response between output stages in a multi-stage RF power amplifier |
JP5974921B2 (ja) * | 2013-02-13 | 2016-08-23 | 株式会社ソシオネクスト | 増幅器及び無線通信装置 |
US9825593B2 (en) * | 2016-03-16 | 2017-11-21 | Technische Universiteit Delft | Highly linear, highly efficient wideband RF power amplifier having wide video bandwidth capability |
US10547279B2 (en) * | 2017-11-17 | 2020-01-28 | Kabushiki Kaisha Toshiba | Switched amplifier |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110355A (ja) * | 1991-10-15 | 1993-04-30 | Fujitsu Ltd | 半導体装置 |
JP3444653B2 (ja) | 1994-06-09 | 2003-09-08 | 三菱電機株式会社 | 電力増幅器 |
JP3214245B2 (ja) * | 1994-07-15 | 2001-10-02 | 三菱電機株式会社 | マイクロ波半導体増幅器 |
JPH08307159A (ja) * | 1995-04-27 | 1996-11-22 | Sony Corp | 高周波増幅回路、送信装置、及び受信装置 |
JP3295690B2 (ja) * | 1995-06-09 | 2002-06-24 | 日本電信電話株式会社 | 分配合成回路 |
JP4166318B2 (ja) * | 1998-03-25 | 2008-10-15 | 松下電器産業株式会社 | 電力増幅器 |
JP3600115B2 (ja) * | 2000-04-05 | 2004-12-08 | 株式会社東芝 | 高周波回路及び通信システム |
JP2002271146A (ja) * | 2001-03-06 | 2002-09-20 | Toshiba Corp | 高周波電力増幅器、高周波電力出力方法 |
US6639465B2 (en) * | 2001-03-27 | 2003-10-28 | Skyworks Solutions, Inc. | Dynamic bias for a power amplifier |
JP3947373B2 (ja) | 2001-07-31 | 2007-07-18 | 株式会社ルネサステクノロジ | 高周波電力増幅器 |
JP3877558B2 (ja) | 2001-09-11 | 2007-02-07 | 株式会社ルネサステクノロジ | 高周波電力増幅器、高周波電力増幅器モジュール及び携帯電話機 |
JP3965284B2 (ja) | 2001-09-11 | 2007-08-29 | 株式会社ルネサステクノロジ | 高周波増幅装置及び送受信装置 |
JP2004134823A (ja) * | 2002-10-08 | 2004-04-30 | Matsushita Electric Ind Co Ltd | 高周波増幅器 |
US7123096B2 (en) * | 2004-05-26 | 2006-10-17 | Raytheon Company | Quadrature offset power amplifier |
-
2004
- 2004-09-21 JP JP2004272945A patent/JP2006093773A/ja not_active Withdrawn
-
2005
- 2005-07-18 US US11/182,859 patent/US7408405B2/en not_active Expired - Fee Related
- 2005-08-05 CN CNB2005100897319A patent/CN100533952C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100533952C (zh) | 2009-08-26 |
JP2006093773A (ja) | 2006-04-06 |
US20060061417A1 (en) | 2006-03-23 |
US7408405B2 (en) | 2008-08-05 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC CORP. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100714 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN COUNTY |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100714 Address after: Kanagawa, Japan Patentee after: NEC ELECTRONICS Corp. Address before: Tokyo, Japan Patentee before: Renesas Technology Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090826 Termination date: 20140805 |
|
EXPY | Termination of patent right or utility model |