CN1751394A - 半导体器件及制造这种器件的方法 - Google Patents
半导体器件及制造这种器件的方法 Download PDFInfo
- Publication number
- CN1751394A CN1751394A CNA2004800043957A CN200480004395A CN1751394A CN 1751394 A CN1751394 A CN 1751394A CN A2004800043957 A CNA2004800043957 A CN A2004800043957A CN 200480004395 A CN200480004395 A CN 200480004395A CN 1751394 A CN1751394 A CN 1751394A
- Authority
- CN
- China
- Prior art keywords
- region
- emitter region
- emitter
- semiconductor device
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 229910008310 Si—Ge Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100368.4 | 2003-02-18 | ||
EP03100368 | 2003-02-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1751394A true CN1751394A (zh) | 2006-03-22 |
CN100442535C CN100442535C (zh) | 2008-12-10 |
Family
ID=32892945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800043957A Expired - Fee Related CN100442535C (zh) | 2003-02-18 | 2004-02-12 | 半导体器件及制造这种器件的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7989844B2 (zh) |
EP (1) | EP1597769B1 (zh) |
JP (1) | JP2006518108A (zh) |
KR (1) | KR20050102655A (zh) |
CN (1) | CN100442535C (zh) |
AT (1) | ATE483252T1 (zh) |
DE (1) | DE602004029334D1 (zh) |
TW (1) | TW200428651A (zh) |
WO (1) | WO2004075300A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104065B (zh) * | 2009-12-21 | 2012-07-11 | 上海华虹Nec电子有限公司 | SiGe HBT工艺中的寄生横向型PNP三极管 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376757B (zh) * | 2010-08-12 | 2013-06-12 | 上海华虹Nec电子有限公司 | SiGe HBT工艺中的横向型寄生PNP器件及制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0917880A (ja) * | 1995-04-26 | 1997-01-17 | Fujitsu Ltd | 半導体記憶装置および該半導体記憶装置のデータ保持、データ読み取り並びにデータ書き込み方法 |
JP3384198B2 (ja) * | 1995-07-21 | 2003-03-10 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP3168147B2 (ja) * | 1995-09-14 | 2001-05-21 | 株式会社日立製作所 | 半導体装置とそれを用いた3相インバータ |
KR100333797B1 (ko) * | 1998-01-22 | 2002-04-26 | 다니구찌 이찌로오, 기타오카 다카시 | 절연 게이트형 바이폴라 반도체 장치 |
US6492711B1 (en) * | 1999-06-22 | 2002-12-10 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method for fabricating the same |
CN1111313C (zh) * | 1999-07-02 | 2003-06-11 | 北京工业大学 | 异质结双极型晶体管 |
US6346453B1 (en) * | 2000-01-27 | 2002-02-12 | Sige Microsystems Inc. | Method of producing a SI-GE base heterojunction bipolar device |
JP2004022941A (ja) * | 2002-06-19 | 2004-01-22 | Toshiba Corp | 半導体装置 |
-
2004
- 2004-02-12 WO PCT/IB2004/050103 patent/WO2004075300A1/en active Application Filing
- 2004-02-12 AT AT04710458T patent/ATE483252T1/de not_active IP Right Cessation
- 2004-02-12 JP JP2006502581A patent/JP2006518108A/ja not_active Withdrawn
- 2004-02-12 US US10/545,736 patent/US7989844B2/en not_active Expired - Fee Related
- 2004-02-12 DE DE602004029334T patent/DE602004029334D1/de not_active Expired - Lifetime
- 2004-02-12 CN CNB2004800043957A patent/CN100442535C/zh not_active Expired - Fee Related
- 2004-02-12 EP EP04710458A patent/EP1597769B1/en not_active Expired - Lifetime
- 2004-02-12 KR KR1020057015213A patent/KR20050102655A/ko not_active Application Discontinuation
- 2004-02-13 TW TW093103491A patent/TW200428651A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104065B (zh) * | 2009-12-21 | 2012-07-11 | 上海华虹Nec电子有限公司 | SiGe HBT工艺中的寄生横向型PNP三极管 |
Also Published As
Publication number | Publication date |
---|---|
EP1597769A1 (en) | 2005-11-23 |
CN100442535C (zh) | 2008-12-10 |
JP2006518108A (ja) | 2006-08-03 |
US20060202229A1 (en) | 2006-09-14 |
WO2004075300A1 (en) | 2004-09-02 |
TW200428651A (en) | 2004-12-16 |
KR20050102655A (ko) | 2005-10-26 |
US7989844B2 (en) | 2011-08-02 |
ATE483252T1 (de) | 2010-10-15 |
DE602004029334D1 (de) | 2010-11-11 |
EP1597769B1 (en) | 2010-09-29 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20071012 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071012 Address after: Holland Ian Deho Finn Applicant after: NXP B.V. Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20220212 |