CN1748315A - Radiation image pickup device - Google Patents
Radiation image pickup device Download PDFInfo
- Publication number
- CN1748315A CN1748315A CN 200480004078 CN200480004078A CN1748315A CN 1748315 A CN1748315 A CN 1748315A CN 200480004078 CN200480004078 CN 200480004078 CN 200480004078 A CN200480004078 A CN 200480004078A CN 1748315 A CN1748315 A CN 1748315A
- Authority
- CN
- China
- Prior art keywords
- thin
- image pickup
- tft
- pickup device
- radiation image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
Abstract
A radiation image pickup device comprises a sensor element converting radiation into an electrical signal and a thin film transistor connected with the sensor element, wherein, an electrode of the sensor element connected with the thin film transistor is arranged on the thin film transistor; the thin film transistor has a top gate type structure, wherein, a semiconductor layer, a grid insulation layer and a gate electrode layer are laminated on a substrate in sequence, so that a channel part of the thin film transistor is protected by a gate electrode, thereby acquiring a stable TFT characteristic without undesirably connecting any TFT element because of a back grid effect caused by the fluctuation in electric potentials corresponding to outputs from the sensor electrode, and greatly improving the image quality.
Description
Technical field
The present invention relates to radiation image pickup device, more specifically to opto-electronic conversion substrate and optical-electrical converter, and be applied to the medical image diagnostic system, and non-destructive inspection system, the radiation image pickup of analyzer etc. that utilizes radiation is with substrate and radiation image pickup device.Note, suppose that the electromagnetic wave such as visible light, X ray, alpha ray, β ray, gamma-rays comprises in " radiation " used in this manual.In addition, " wavelength conversion unit " that use in this specification means the unit that is used for the wavelength Conversion radiation, and is assumed to be and comprises the fluorophor that radiation such as X ray is converted to light signal.In addition, " semiconductor conversion element " used in this specification means the element that at least radiation is converted to electric charge, and is assumed to be and comprises the photo-electric conversion element that light signal is converted to electric charge.
Background technology
In recent years, liquid crystal display makes progress with the technology of TFT, and is satisfactory to the technological service of information infrastructure.Thereby at present, a kind of flat-panel detector (below abbreviate " FPD " as) is proposed, by making up by using non-monocrystalline silicon, the sensor array that constitutes of the photo-electric conversion element of amorphous silicon (below abbreviate " a-Si " as) for example, and utilize the fluorophor switching TFT that radiation is converted to the light such as visible light, obtain described flat-panel detector.In addition, even in the imaging of medical field, FPD also can have bigger range of application, and has realized the digitlization of FPD.
This FPD is suitable for reading immediately radiation image, thereby simultaneously the radiation image of reading like this is presented on the display device, and image can directly take out from FPD with the form of digital information.Thereby FPD has the keeping in data, and the feature of convenient management is handled in the perhaps processing of data and transmission aspect.In addition, depend on imaging conditions although confirm the characteristic such as sensitivity, but described characteristic is parity with or superiority over the characteristic of conventional screen sheet (abbreviating " S/F " below the screen film as) image capture method or computer radiation (computed radiography abbreviates " CR " below as) image capture method.
The equivalent circuit diagram of having represented 1 bit among the FPD among Figure 10.In addition, the signal equivalent circuit diagram of having represented (3 * 3) bit among the FPD among Figure 11.In these figure, Reference numeral 101 and Reference numeral S11-S33 represent the photo-electric conversion element part respectively; Reference numeral 102 and Reference numeral T11-T33 represent to transmit the TFT part respectively; Reference numeral 104 and Reference numeral Vg1-Vg3 represent to transmit TFT respectively and drive wiring; Reference numeral 106 and Reference numeral Sig1-Sig3 represent holding wire respectively; Reference numeral 107 and Reference numeral Vs1-Vs3 represent the photo-electric conversion element bias wiring respectively; Reference numeral A represents signal processing circuit; Reference numeral B represents grid bias power supply; Reference numeral D represents the TFT drive circuit; Reference number C is represented A/D converter.
Make radiation such as X ray from the top incident of the paper of Figure 11, convert light such as visible light to by the fluorophor (not shown).Resulting light converts electric charge to by photo-electric conversion element S11-S33 subsequently, so that be accumulated among the photo-electric conversion element S11-S33.Afterwards, TFT drive circuit D drives wiring by TFT and handles and transmit TFT fractional t1 1-T33, so that these charges accumulated are delivered to holding wire Sig1-Sig3, so that handle in signal processing circuit A.In addition, resulting signal carries out the A/D conversion subsequently so that be output in A/D converting unit C.
Basically, adopt aforesaid component structure usually.Especially,, generally adopt the PIN type photodetector (below abbreviate " PIN type PD " as) of employings such as the inventor, perhaps MIS type photodetector (below abbreviate " MIS type PD " as) for above-mentioned photo-electric conversion element.Except such element, various elements have been proposed also.
As mentioned above, realized the commercialization of FPD.On the other hand, in order further to improve sensitivity, the various proposals about FPD have been proposed.For example, at the document " SPIE Medical Imaging VI " of L.E Antonuk etc., the report among the pp.23-27 (in February, 1992) discloses a kind of structure, and wherein sensor element is layered on the TFT element.In this proposal, the employing of said structure allows the open area ratio of sensor element to be increased, thereby makes the increase of sensitivity become possibility.In addition, narrated, formed unnecessary parasitic capacitance, thereby arranged a ground plane because the TFT element is placed under the sensor element.But concrete details is unclear, and its effect is also unclear.
In addition, in the proposal of making, a kind of structure has been described similarly in the specification of U.S. Patent No. 5498880, wherein in order to increase open area ratio, sensor element is laminated on the TFT element.In this proposal, adopted the electrode that wherein is connected to cover the TFT element with the source/drain electrode of TFT element, also become the structure of the absolute electrode of sensor element.
On the other hand, in the proposal in the document of the open No.2000-156622 of Japanese patent application, a kind of structure has been described, wherein in order to increase open area ratio, sensor element is laminated on the TFT element.In this is proposed, adopted and wherein passed through intermediate layer film, sensor element is laminated in the structure on the TFT element.
But, in above-mentioned correlation technique example, adopted the channel part that causes TFT to be subjected to the structure of the influence of various forms of potential fluctuation.In addition, even in the description of having arranged screen, its structure is also unclear.
That is, in having the FPD of conventional stepped construction, the absolute electrode of sensor element plays the effect of the back gate electrode (back-gate electrode, back gate electrode) of TFT element.So, because the fluctuation of the electromotive force of absolute electrode, cause the problem such as the generation of the leakage current of TFT element, thereby cause the reduction of picture quality.
For example the zone with large sensor output signal and zone with little sensor output signal by situation disposed adjacent one another under, the crosstalking of border and so between fuzzy these zones can appear.In addition, can cause the saturated output of transducer to be lowered, thereby reduce the problem of dynamic range.
Summary of the invention
Made the present invention in view of the above problems, so, even when an object of the present invention is the potential fluctuation of absolute electrode of the sensor element on being arranged in the TFT element, also can suppress the fluctuation of the characteristic that the generation owing to the leakage current of TFT element causes, thereby improve sensitivity.
According to the present invention, a kind of optical-electrical converter is provided, wherein arrange and include the sensor element that is used for incident light is converted to the signal of telecommunication, a plurality of pixels with the thin-film transistor that is connected with sensor element, optical-electrical converter is characterised in that the electrode of the sensor element that is connected with thin-film transistor is placed on the thin-film transistor, and thin-film transistor has top grid (top gate) type structure, semiconductor layer wherein, gate insulator and gate electrode layer by sequential cascade on substrate.
According to the present invention, the TFT element is adopted the top grid structure, thereby obtain such structure, promptly the TFT channel part is protected by gate electrode, and the shielding construction of complicated layout on TFT not.Thereby, can obtain stable TFT characteristic, and can be because of by the back gate effects (back grid effect, backgate effect) that causes with fluctuation from the corresponding electromotive force of the output of sensor electrode, any TFT element of conducting.That is, also can greatly improve picture quality.
According to the following explanation of carrying out in conjunction with the accompanying drawings, other features and advantages of the present invention will be conspicuous, and in the accompanying drawing, identical Reference numeral is represented same or analogous part.
Description of drawings
Be included in the specification and constitute the accompanying drawing graphic extension embodiments of the invention of a specification part, and and explanation one be used from and explain principle of the present invention.
Fig. 1 is the equivalent circuit diagram according to 1 bit in the radiation image pickup device of embodiments of the invention 1;
Fig. 2 is the schematic plan view according to the radiation image pickup device of embodiments of the invention 1;
Fig. 3 is the schematic cross section along the line 3-3 acquisition of Fig. 2;
Fig. 4 is the equivalent circuit diagram according to 1 bit in the radiation image pickup device of embodiments of the invention 2;
Fig. 5 is the schematic plan view according to the radiation image pickup device of embodiments of the invention 2;
Fig. 6 is the schematic cross section along the line 6-6 acquisition of Fig. 6;
Fig. 7 is the equivalent circuit diagram of 1 bit in the radiation image pickup device according to an embodiment of the invention;
Fig. 8 is the schematic plan view according to the radiation image pickup device of embodiments of the invention 3;
Fig. 9 is the schematic cross section according to the radiation image pickup device of embodiments of the invention 4;
Figure 10 is the signal equivalent circuit diagram of 1 bit (pixel) in the conventional radiation image pickup device;
Figure 11 is the signal equivalent circuit diagram of (3 * 3) bit in the conventional radiation image pickup device;
Figure 12 is according to the equivalent circuit diagram in the radiation image pickup device of embodiments of the invention 5;
Figure 13 is the schematic plan view according to the radiation image pickup device of embodiments of the invention 5;
Figure 14 is the schematic cross section along the line 14-14 acquisition of Figure 13;
Figure 15 is according to the equivalent circuit diagram in the radiation image pickup device of embodiments of the invention 6;
Figure 16 is the schematic plan view according to the radiation image pickup device of embodiments of the invention 6;
Figure 17 is the schematic cross section along the line 17-17 acquisition of Figure 16;
Figure 18 is according to the equivalent circuit diagram in the radiation image pickup device of embodiments of the invention 7;
Figure 19 is the conceptual view of structure that expression utilizes the X-ray radiography system of radiation image pickup device of the present invention.
Embodiment
Describe embodiments of the invention in detail below with reference to accompanying drawing.
Embodiment 1
As embodiments of the invention 1, the TFT element is wherein transmitted in explanation now and the TFT element that resets is disposed in optical-electrical converter in the pixel and radiation image pickup device respectively.Embodiment 1 relates to the wavelength conversion unit that wherein is used for radiation wavelength is converted to the light such as visible light and is placed on the optical-electrical converter, and the indirect-type radiation image pickup device read by optical-electrical converter of resulting light.MIS type PD or PIN type PD can be used to the photo-electric conversion element of optical-electrical converter.
Fig. 1 represents the equivalent circuit diagram of 1 bit (pixel) in the optical-electrical converter.Among Fig. 1, Reference numeral 1 expression photo-electric conversion element part; The TFT part is transmitted in Reference numeral 2 expressions; Reference numeral 3 represents to reset the TFT part; Reference numeral 4 expressions are transmitted TFT and are driven wiring; The Reference numeral 5 expression TFT that resets drives wiring; Reference numeral 6 expression holding wires; Reference numeral 7 expression bias wirings; Reference numeral 8 represents to reset wiring.
Summarize driving method below with reference to Fig. 1.Radiation such as X ray is by wavelength conversion unit, and for example fluorophor carries out wavelength conversion, makes it to incide photo-electric conversion element part 1.Incident light is become electric charge by opto-electronic conversion subsequently, the accumulation in photo-electric conversion element part 1 again of described electric charge.
Afterwards, drive wiring 4, the gate electrode that transmits TFT part 2 is applied ON voltage (conducting voltage), make with conducting and transmit 2 conductings of TFT part by transmitting TFT.Thereby the signal of telecommunication is delivered to holding wire 6 from photoelectric conversion part, so that read by the IC that reads that provides separately.After finishing the operation of reading the signal of telecommunication, drive wiring 4 by transmitting TFT, the gate electrode that transmits TFT part 2 is applied OFF voltage (shutoff voltage), transmit TFT part 2 so that turn-off.Thereby, finish a series of read operation.
Subsequently, drive wiring 5, the gate electrode of the TFT part 3 that resets is applied ON voltage (conducting voltage), and apply resetting voltage, so that reset photo-electric conversion element part 1 by the 8 pairs of TFT parts 3 that reset of wiring that reset by the TFT that resets.Afterwards, drive wiring 5 by the TFT that resets, the gate electrode of the TFT part 3 that resets is applied OFF voltage (shutoff voltage), processing finishes.
Above, simple and clear for what describe, according to the equivalent circuit diagram of 1 bit driving method has been described.But in fact, a plurality of pixels (all corresponding to 1 bit) are by two-dimensional arrangement, and the transmission TFT of pixel part is connected with the common driver wiring respectively with the TFT part that resets.In addition, these elements of pixel are distinguished public connection signal lines etc.
The schematic plan view of having represented a pixel among Fig. 2.Among Fig. 2, represent and the identical element shown in Fig. 1 with identical Reference numeral.Fig. 3 is the cross-sectional view along the line 3-3 acquisition of Fig. 2.Notice that in Fig. 3, transmission TFT part 2 and the interval that resets between the TFT part 3 obviously dwindle.
At first TFT part 2 is transmitted in explanation.Among Fig. 3, Reference numeral 11 expression substrates, Reference numeral 12 expression polycrystal semiconductor layers; Reference numeral 13 expression regions and source; Reference numeral 14 expression is by having the displacement zone that the low doped region of identical conduction type constitutes with regions and source 13; Reference numeral 15 expression gate insulators; The wiring of TFT gate driving is transmitted in Reference numeral 16 expressions; Reference numeral 17 expression gate electrodes; Reference numeral 18 expression interlayer insulating films; Reference numeral 19 expression source electrode/drain electrodes.Transmit TFT part 2 and comprise two TFT that are connected in series mutually, two gate electrodes 17 of these two TFT all drive wiring 4 with transmission TFT and are connected.In addition, each TFT has LDD (lightly doped drain) structure.
The structure of the TFT part 3 that resets is identical with the structure of transmitting TFT part 2.The TFT gate driving of representing Reference numeral 21 to reset connects up, and Reference numeral 22 represents to reset wiring.The TFT part 3 that resets also comprises two TFT that are one another in series and connect.Two gate electrodes of two TFT all drive wiring 5 with the TFT that resets and are connected.Each TFT has the LDD structure.
In addition, in Fig. 3, Reference numeral 23 expression interlayer insulating films; Reference numeral 24 expression transducer absolute electrodes; Reference numeral 25 expression MIS type PD (laminated construction) with stacked insulating barrier, semiconductor layer and resistance contact layer; Reference numeral 26 expression transparency electrodes; Reference numeral 27 expression transducer bias wirings.The signal of telecommunication from MIS type PD25 is delivered to the drain electrode 19 that is connected with transducer absolute electrode 24, so that read from the holding wire 6 that is connected with source electrode 19 by transmitting TFT part 2.
Notice that the fluorophor (not shown) is disposed on the photo-electric conversion element part (corresponding to the MIS type PD among the embodiment 1), constitutes radiation image pickup device.By adopting aforesaid structure, form a kind of structure, wherein corresponding gate electrode protects the channel part of each TFT not to be subjected to the influence of fluctuation of the electromotive force of the transducer absolute electrode 24 that is connected with MIS type PD.
Should note transmitting one of any in partly of the TFT part and the TFT that resets and also can be constituted as two TFT that comprising is one another in series is connected.
Thereby, for example, can reduce and the leakage current of exporting each corresponding TFT from the optics of transducer absolute electrode 24.Thereby, can significantly improve picture quality.In addition, irrelevant with pixel size, obtain about 100% open area ratio, big thereby the area that TFT occupies becomes, thus prevented reduction (contraction).But,, still can guarantee open area ratio although there is this situation.This becomes a main advantages of configuration aspects.
In addition, a plurality of TFT connection that is one another in series, thus TFT characteristic, especially OFF (shutoff) characteristic is modified.In addition, can provide redundant, take precautions against fault and for example pass the short circuit that gate insulator causes between the upper and lower, the short circuit that perhaps in semiconductor layer, causes for equipment.
As embodiments of the invention 2, the following describes and wherein transmit the TFT element and the TFT element that resets is disposed in radiation image pickup device in the pixel respectively.Embodiment 2 relates to and wherein utilizes a-Se etc., directly radiation is converted to the direct type radiation image pickup device of the signal of telecommunication.
The equivalent circuit diagram of having represented 1 bit among Fig. 4.Represent with identical Reference numeral with composed component identical among Fig. 1.But, Reference numeral 1 expression radiation conversion element part.Among Fig. 4, radiation conversion element part 1 is the direct type radiation conversion element part that directly radiation is converted to the signal of telecommunication.The TFT part is transmitted in Reference numeral 2 expressions; Reference numeral 3 represents to reset the TFT part; Reference numeral 4 expressions are transmitted TFT and are driven wiring; The Reference numeral 5 expression TFT that resets drives wiring; Reference numeral 6 expression signal routings; Reference numeral 7 expression bias wirings; Reference numeral 8 represents to reset wiring.In addition, the holding capacitor of the electric charge that obtains of the direct conversion of Reference numeral 9 expression accumulation by radiation.
Basic operation is identical with embodiment 1 almost.In radiation conversion element part 1, radiation is directly changed into electric charge.Resulting electric charge is accumulated in the holding capacitor 9 subsequently, so that read by transmitting TFT part 2.Afterwards, in reset operation, radiation conversion element part 1 (the direct type converting member among the embodiment 2) and holding capacitor 9 are resetted simultaneously.
The schematic plan view of having represented a pixel among Fig. 5.In Fig. 5, represent with identical Reference numeral with composed component identical among Fig. 4.Fig. 6 is the cross-sectional view along the line 6-6 acquisition of Fig. 5.Notice that in Fig. 6, transmission TFT part 2 and the interval that resets between the TFT part 3 are obviously shortened.
At first TFT part 2 is transmitted in explanation.Among Fig. 6, Reference numeral 11 expression substrates; Reference numeral 12 expression polycrystal semiconductor layers; Reference numeral 13 expression regions and source; Reference numeral 14 expression is by having the displacement zone that the low doped region of identical conduction type constitutes with regions and source 13; Reference numeral 15 expression gate insulators; The wiring of TFT gate driving is transmitted in Reference numeral 16 expressions; Reference numeral 17 expression gate electrodes; Reference numeral 18 expression interlayer insulating films; Reference numeral 19 expression source electrode/drain electrodes.Transmit TFT part 2 and comprise two TFT that are connected in series mutually, two gate electrodes 17 of these two TFT all drive wiring 4 with transmission TFT and are connected.In addition, each TFT has LDD (lightly doped drain) structure.
The structure of the TFT part 3 that resets is identical with the structure of transmitting TFT part 2.The TFT gate driving of representing Reference numeral 21 to reset connects up, and Reference numeral 22 represents to reset wiring.The TFT part 3 that resets also comprises two TFT that are one another in series and connect.Two gate electrodes of two TFT all drive wiring 5 with the TFT that resets and are connected.Each TFT has the LDD structure.
In addition, in Fig. 6, Reference numeral 23 expression interlayer insulating films; Reference numeral 24 expression transducer absolute electrodes; The direct converting member of Reference numeral 29 expressions is (by a-Se, GaAs, PbI
2Deng making); Reference numeral 30 expression transducer top electrodes.
In addition, holding capacitor is formed and comprises capacitor lower electrode 28, interlayer insulating film 18 and source electrode/drain electrode 19.
Note, similarly, by adopting aforesaid structure, form a kind of structure, wherein corresponding gate electrode protects the channel part of each TFT not to be subjected to the influence of fluctuation of the electromotive force of the transducer absolute electrode 24 that is connected with direct converting member 29.
Thereby, for example, can reduce and the leakage current of exporting each corresponding TFT from the optics of transducer absolute electrode 24.Thereby, can significantly improve picture quality.In addition, irrelevant with pixel size, obtain about 100% open area ratio.This becomes a main advantages of configuration aspects, to prevent reduction (contraction).
In addition, a plurality of TFT connection that is one another in series, thus TFT characteristic, especially OFF (shutoff) characteristic is modified.In addition, can provide redundant, take precautions against fault and for example pass the short circuit that gate insulator causes between the upper and lower, the short circuit that perhaps in semiconductor layer, causes for equipment.
As embodiments of the invention 3, the following describes by AmpTFT (amplifying TFT) with the gate electrode that is received in the electric charge that produces in the photo-electric conversion element, transmission is corresponding to the radiation image pickup device of the formations such as transmission TFT of the signal of telecommunication of these electric charges.Embodiment 3 relates to radiation wavelength is converted to light such as visible light, so that read the indirect-type radiation image pickup device of resulting light by photo-electric conversion element.MIS type PD or PIN type PD also can be used to photo-electric conversion element.
The equivalent circuit diagram of having represented 1 bit in the optical-electrical converter among Fig. 7.In Fig. 7, represent by identical Reference numeral with the identical composed component shown in Fig. 1.Among Fig. 7, Reference numeral 1 expression photo-electric conversion element part; Reference numeral 31 expression AmpTFT parts; The TFT part is transmitted in Reference numeral 2 expressions; Reference numeral 3 represents to reset the TFT part; Reference numeral 4 expressions are transmitted TFT and are driven wiring; The Reference numeral 5 expression TFT that resets drives wiring; Reference numeral 6 expression holding wires; Reference numeral 7 expression bias wirings; Reference numeral 8 represents to reset wiring; The TFT bias wiring is transmitted in Reference numeral 32 expressions.AmpTFT part 31 also has two TFT that are connected in series.
Summarize driving method below with reference to Fig. 7.Radiation such as X ray is by wavelength conversion unit, and for example fluorophor carries out wavelength conversion, makes it to incide photo-electric conversion element part 1.Incident light is become electric charge by opto-electronic conversion subsequently, the accumulation in photo-electric conversion element part 1 again of described electric charge.
Because the cause of these electric charges causes the fluctuation of the electromotive force corresponding with the amount of incident light in the gate electrode of AmpTFT31.Afterwards, drive wiring 4, the gate electrode that transmits TFT part 2 is applied ON voltage, so that TFT part 2 is transmitted in conducting by transmitting TFT.Thereby, produce the output signal corresponding with the amount of incident light by holding wire 6.
After finishing the operation that exterior I C reads output signal, drive wiring 4 by transmitting TFT, the gate electrode that transmits TFT part 2 is applied OFF voltage, transmit TFT part 2 so that turn-off.Thereby, finish a series of read operation.
Subsequently, drive wiring 5, the gate electrode of the TFT part 3 that resets is applied ON voltage, and apply resetting voltage, so that reset photo-electric conversion element part 1 by the 8 pairs of TFT parts 3 that reset of wiring that reset by the TFT that resets.Afterwards, drive wiring 5 by the TFT that resets, the gate electrode of the TFT part 3 that resets is applied OFF voltage, processing finishes.
Above, simple and clear for what describe, according to the equivalent circuit diagram of 1 bit driving method has been described.But in fact, a plurality of pixels (all corresponding to 1 bit) are by two-dimensional arrangement, and the transmission TFT of pixel part is connected with the common driver wiring respectively with the TFT part that resets.In addition, these elements of pixel are distinguished public connection signal lines etc.
The schematic plan view of having represented a pixel among Fig. 8.Among Fig. 8, represent and Fig. 1 and the identical element shown in 7 with identical Reference numeral.As among the embodiment 3, use under the situation of 3 kinds of TFT, by convention,, make and can not guarantee enough sensitivity because open area ratio is shown and reduces, therefore be difficult to finish the functional circuit design.But in embodiment 3, sensor element is disposed on the TFT element, thereby can realize having the radiation image pickup device of high design freedom.In other words, can realize the equipment of high image quality.
In embodiment 4, will describe about the TFT structure among the embodiment 1 being adopted the situation of biasing (skew) structure.Represented schematic cross section among Fig. 9 according to the radiation image pickup device of embodiment 4.
As can be seen from Figure 9, adopted channel region 12 wherein to be wider than the bias structure of the gate electrode 17 of FTF.With regard to embodiment 4, be similar in embodiment 1 the LDD structure that adopts, identical effect is provided, even for example in bias structure, the stabilisation of OFF electric current among the TFT.
In embodiment 5, the present invention is applied to the indirect-type radiation image pickup device, wherein the radiation such as X ray of incident is converted into visible light by luminescent coating (wavelength conversion unit), resulting visible light converts electric charge to by photo-electric conversion element (semiconductor conversion element or sensor element), and resulting electric charge is read out by thin-film transistor (switch element) subsequently.
Figure 12 is the equivalent circuit diagram according to the radiation image pickup device of embodiment 5, Figure 13 is the plane graph according to the radiation image pickup device of embodiment 5, and Figure 14 is according to the cross-sectional view of the radiation image pickup device of embodiment 5 (cross-sectional view that obtains along the line 14-14 of Figure 13).
In Figure 12-14, Reference numeral P11-P44 is (in Figure 13, refer to by dotted line around the zone) represent photo-electric conversion element respectively as semiconductor conversion element (sensor element), described photo-electric conversion element is formed under the luminescent coating shown in Figure 14 10, and is used for the visible light that obtains via the wavelength Conversion of the incident X-rays of luminescent coating 10 is converted to electric charge; Reference numeral T11-T44 represents the thin-film transistor (below abbreviate " TFT " as) as switch element respectively, and described thin-film transistor is used for reading the electric charge that the opto-electronic conversion by photo-electric conversion element P11-P44 obtains.Photo-electric conversion element P11-P44 and TFTT11-T44 constitute pixel C11-C44 respectively.These pixels are formed on the dielectric substrate 20 shown in Figure 14 with matrix form.Note, though represented pixel among the embodiment 6 with the arranged in form of 4 * 4 matrixes, in fact, pixel is disposed on the dielectric substrate 20 shown in Figure 14 with the form of 1000 * 2000 matrixes.
As shown in Figure 12 and 13, photo-electric conversion element P11-P44 is connected with common bias line Vs1-Vs4 respectively.By common bias line Vs1-Vs4,30 couples of photo-electric conversion element P11-P44 apply constant bias from fetch equipment.
The gate electrode of each TFT (T11-T44) is connected with common gate polar curve Vg1-Vg4 respectively.Gate driving equipment 40 is by the turn-on and turn-off of the gate electrode of gate line Vg1-Vg4 control TFT (T11-T44).The source electrode of TFT (T11-T44) is connected with common signal line Sig1-Sig4 respectively with drain electrode.These holding wires Sig1-Sig4 is connected with fetch equipment 30.
In above-mentioned radiation image pickup device, be attenuated and see through sample towards the X ray of sample emission, so that be converted into visible light by the luminescent coating shown in Figure 14 10.Described visible light incides on the photo-electric conversion element P11-P44, thereby is converted into electric charge.According to the gate driving pulse that the grid from 40 couples of TFT of gate driving equipment (T11-T44) applies, these electric charges are delivered to holding wire Sig1-Sig4 by TFT (T11-T44), so that read into the outside by fetch equipment 30.Afterwards, in photo-electric conversion element P11-P44, produce, thereby and do not transmitted still residual electric charge and remove by common bias line Vs1-Vs4.
The structure of said elements is described below with reference to Figure 14.Here, though as an example, the structure of the pixel C11 shown in Figure 12 and 13 has been described, each other pixel C12-C44 is structurally identical with pixel C11.
As shown in Figure 14, in pixel C11, the first insulating barrier L1, TFT (T11) and photo-electric conversion element P11 are formed on the dielectric substrate 20 in proper order.
For example, the first insulating barrier L1 is by SiN, SiO
2Form with SiON is one of any.
As each layer that constitutes TFT (T11), as shown in Figure 14, order forms the first electrode layer L2 of formation source electrode and drain electrode on the first insulating barrier L1, the high doping semiconductor layer L3 that comprises source area and drain region, the semiconductor layer L4 that comprises the channel part that is limited between source area and the drain region, constitute the second insulating barrier L5 of insulating barrier and the second electrode lay L6 of formation gate electrode.In these layers, constitute the channel width of the second electrode lay L6 of gate electrode greater than semiconductor layer L4, so that it is overlapping at the horizontal level and the first electrode layer L2, the first electrode layer L2 is formed under the second electrode lay L6 so that with the second electrode lay L6 the second insulating barrier L5 is clipped in the middle, and constitutes source electrode and drain electrode.The first electrode layer L2 and the second electrode lay L6 respectively with the holding wire Sig1 shown in Figure 12 and 13, and Figure 12 is connected with the gate line Vg1 shown in 13.
In addition, as each layer that constitutes photo-electric conversion element P11, as shown in Figure 14, third electrode layer L8, the 4th insulating barrier L9, the second semiconductor layer L10, n
+Type semiconductor layer L11 is formed on the second electrode lay L6 according to described order by the 3rd insulating barrier L7 with the 4th electrode layer L12 that is connected with common bias line Vs1-Vs4.In these layers, third electrode layer L8 is connected with the first electrode layer L2 of TFT (T11).In addition, the 4th electrode layer L12 is connected with the bias line Vs1 shown in Figure 13 with Figure 12.As shown in Figure 14, the 5th insulating barrier L13 and organic passivation layer L14 are formed on the 4th electrode layer L12 in proper order.In addition, by adhesive layer L15, luminescent coating 10 is formed on the organic passivation layer L14.
Thereby even produce the fluctuation of the electromotive force that is formed at the photo-electric conversion element P11 on the TFT (T11), the TFT characteristic is still stable, because there is the gate electrode of the turn-on and turn-off of control TFT (T11) between photo-electric conversion element P11 and channel part Ch11.
In addition, TFT (T11) with this structure becomes the TFT with high driving ability, because at high doping semiconductor layer L13 by die sinking (composition) afterwards, forms semiconductor layer (the first semiconductor layer L4), making needn't etch channels portion C h11, thereby allows this semiconductor layer to be formed by film.
As mentioned above, according to embodiment 5, for each the TFT element (switch element) that is formed under the photo-electric conversion element (semiconductor conversion element), adopted and wherein formed source electrode and drain electrode (first electrode layer) successively, the high doping semiconductor layer, semiconductor layer (first semiconductor layer), the structure of insulating barrier (second insulating barrier) and gate electrode (the second electrode lay).Thereby, can form TFT element with stable properties and high driving ability.
Though should note in embodiment 5, MIS N-type semiconductor N conversion element has been described, but even, also can have obtained identical effect with regard to PIN N-type semiconductor N conversion element.
In addition, in embodiment 5, for example understand radiation to be converted to visible light, so that resulting visible light is converted to the indirect-type radiation image pickup device of electric charge by photo-electric conversion element by luminescent coating.But, using the material that can directly convert radiation to electric charge even adopt, the direct type radiation image pickup device such as amorphous selenium also can obtain identical effect.
In embodiment 6, the present invention is applied to wherein except the structure identical with embodiment 5 radiation image pickup device of the TFT that resets being set in each pixel also.
Figure 15 is the equivalent circuit diagram according to the radiation image pickup device of embodiment 6, Figure 16 is the plane graph according to the radiation image pickup device of embodiment 6, and Figure 17 is according to the cross-sectional view of the radiation image pickup device of embodiment 6 (cross-sectional view that obtains along the line 17-17 of Figure 16).
In Figure 15-17, Reference numeral P11-P44 is (in Figure 16, refer to by dotted line around the zone) represent photo-electric conversion element respectively as semiconductor conversion element (sensor element), described photo-electric conversion element is formed under the luminescent coating shown in Figure 17 10, and is used for the visible light that obtains via the wavelength Conversion of the incident X-rays of luminescent coating 10 is converted to electric charge; Reference numeral T11-T44 represents the TFT that reads as switch element respectively, is used for reading the electric charge that the opto-electronic conversion by photo-electric conversion element P11-P44 obtains; Reference numeral Tr11-Tr44 represents the TFT that resets respectively, is used to read be not read TFT (T11-T44) transmission, thereby by remaining electric charge, and photo-electric conversion element P11-P44 is resetted.Photo-electric conversion element P11-P44 reads TFT T11-T44 and the TFTTr11-Tr44 that resets constitutes pixel C11-C44 respectively.These pixels are formed on the dielectric substrate 20 shown in Figure 17 with matrix form.Note, though represented pixel among the embodiment 6 with the arranged in form of 4 * 4 matrixes, in fact, pixel is disposed on the dielectric substrate 20 shown in Figure 17 with the form of 1000 * 2000 matrixes.
As shown in Figure 15 and 16, photo-electric conversion element P11-P44 is connected with common bias line Vs1-Vs4 respectively.By common bias line Vs1-Vs4,30 couples of photo-electric conversion element P11-P44 apply constant bias from fetch equipment.
The gate electrode that reads TFT (T11-T44) is connected with common gate polar curve Vg1-Vg4 respectively.Gate driving equipment 40 reads the turn-on and turn-off of the gate electrode of TFT (T11-T44) by gate line Vg1-Vg4 control.The source electrode that reads TFT (T11-T44) is connected with common signal line Sig1-Sig4 respectively with drain electrode.These holding wires Sig1-Sig4 is connected with fetch equipment 30.
In addition, the reset gate electrode of TFT (Tr11-Tr44) is connected with common gate polar curve Vr1-Vr4 respectively.Gate driving equipment 40 is controlled the turn-on and turn-off of the gate electrode of the TFT (Tr11-Tr44) that resets by gate line Vr1-Vr4.The reset source electrode of TFT (Tr11-Tr44) or drain electrode is connected with common reset wiring R1-R4 respectively.These wiring R1-R4 that reset are connected with fetch equipment 30.
In above-mentioned radiation image pickup device, be attenuated and see through sample towards the X ray of sample emission, so that be converted into visible light by the luminescent coating shown in Figure 17 10.Described visible light incides on the photo-electric conversion element P11-P44, thereby is converted into electric charge.According to the gate driving pulse that the grid that reads TFT (T11-T44) from 40 pairs of gate driving equipment applies, these electric charges are delivered to holding wire Sig1-Sig4 by reading TFT (T11-T44), so that read into the outside by fetch equipment 30.Afterwards, in photo-electric conversion element P11-P44, produce, and be not read the electric charge that TFT (T11-T44) transmits and be delivered to the wiring R1-R4 that resets, so that remove by fetch equipment 30 by the TFT that resets (Tr11-Tr44).
The structure of said elements is described below with reference to Figure 17.Here, though as an example, the structure of the pixel C11 shown in Figure 15 and 16 has been described, each other pixel C12-C44 is structurally identical with pixel C11.
As shown in Figure 17, in pixel C11, by SiN, SiO
2With one of any first insulating barrier L1 that forms of SiON, read TFT (T11), TFT that resets (not shown among Figure 17) and photo-electric conversion element P11 are formed on the dielectric substrate 20 in proper order.
In above-mentioned component part, in reading TFT (T11), as shown in Figure 17, order forms the first electrode layer L2 of formation source electrode and drain electrode on the first insulating barrier L1, the high doping semiconductor layer L3 that comprises source area and drain region, the semiconductor layer L4 that comprises the channel part that is limited between source area and the drain region constitutes the second insulating barrier L5 of insulating barrier and the second electrode lay L6 of formation gate electrode.In these layers, only on the channel part of semiconductor layer L4, form the second electrode lay L6 that constitutes gate electrode, so that it is not overlapping at the horizontal level and the first electrode layer L2, the first electrode layer L2 is formed under the second electrode lay L6 so that with the second electrode lay L6 the second insulating barrier L5 is clipped in the middle, and constitutes source electrode and drain electrode.The first electrode layer L2 and the second electrode lay L6 respectively with the holding wire Sig1 shown in Figure 15 and 16, and Figure 15 is connected with the gate line Vg1 shown in 16.
Said structure also is applied to the TFT that resets.In the schematic cross section of Figure 17, represented the wiring R2 that resets at the TFT that resets (Tr12) that below the photo-electric conversion element P21 of the contiguous pixel C21 of above-mentioned pixel C11, forms.The wiring R2 that resets is connected with first electrode layer (source electrode or the drain electrode) L2 of the TFT that resets (Tr12).Subsequently, high doping semiconductor layer L3, the semiconductor layer L4 and the second insulating barrier L5 are formed on the wiring R2 that resets successively.
On the other hand, in photo-electric conversion element P11, as shown in Figure 17, third electrode layer L8, the 4th insulating barrier L9, the second semiconductor layer L10, n
+Type semiconductor layer L11 and the 4th electrode layer L12 are formed on the second electrode lay L6 according to described order by the 3rd insulating barrier L7.In these layers, third electrode layer L8 is connected with the source electrode or the drain electrode that read TFT (T11) that are made of the first electrode layer L2.In addition, the 4th electrode layer L12 is connected with the bias line Vs1 shown in Figure 16 with Figure 15.As shown in Figure 17, the 5th insulating barrier L13 and organic passivation layer L14 are formed on the 4th electrode layer L12 in proper order.In addition, by adhesive layer L15, luminescent coating 10 is formed on the organic passivation layer L14.
Thereby, even produce the fluctuation that is formed at the electromotive force that reads the photo-electric conversion element P11 on TFT (T11) and the TFT that resets (Tr11), the TFT characteristic is still stable, because exist control to read the gate electrode of the turn-on and turn-off of TFT (T11) and the TFT that resets (Tr11) between photo-electric conversion element P11 and channel part Ch11.
In addition, the TFT that reads that all has this structure becomes the TFT with high driving ability with the TFT that resets, because at the high doping semiconductor layer by die sinking (composition) afterwards, forms semiconductor layer (first semiconductor layer), and making needn't the etch channels part.This allows this semiconductor layer to be formed by film.
In addition, in embodiment 6, read TFT and the gate electrode of the TFT that resets, so gate electrode is not overlapping at horizontal level and source electrode or drain electrode owing to only on channel part, form each.Thereby the signal line capacitance amount can be further reduced, and makes it possible to provide low noise radiation image pickup device.
As mentioned above, according to embodiment 6, for each the TFT element (reading TFT and the TFT that resets) that is formed under the photo-electric conversion element (semiconductor conversion element), adopted and wherein formed source electrode and drain electrode (first electrode layer) successively, the high doping semiconductor layer, semiconductor layer (first semiconductor layer), the structure of insulating barrier (second insulating barrier) and gate electrode (the second electrode lay).Thereby, can form TFT element with stable properties and high driving ability.
Though should note in embodiment 6, MIS N-type semiconductor N conversion element has been described, but even, also can have obtained identical effect with regard to PIN N-type semiconductor N conversion element.
In addition, in embodiment 6, for example understand radiation to be converted to visible light, so that resulting visible light is converted to the indirect-type radiation image pickup device of electric charge by photo-electric conversion element by luminescent coating.But, using the material that can directly convert radiation to electric charge even adopt, the direct type radiation image pickup device such as amorphous selenium also can obtain identical effect.
Embodiment 7
In embodiment 7, the present invention is applied to (SFA) type radiation image pickup device of source follower (source follower).Figure 18 is the equivalent circuit diagram according to the radiation image pickup device of embodiment 7.
In the radiation image pickup device shown in Figure 18, the gate electrode of switching TFT (TFT1 etc.) is connected with common gate polar curve Vg respectively.Gate driving equipment 40 is by the turn-on and turn-off of the grid of corresponding gate line Vg control switch TFT (TFT1 etc.).The source electrode of switching TFT (TFT1 etc.) or drain electrode are connected with common signal line Sig by reading TFT (TFT2 etc.) respectively.Holding wire Sig is connected with fetch equipment 30.
The electrode of photo-electric conversion element P is connected with common electrode drive device (not shown) respectively, and another electrode of photo-electric conversion element P is connected with the control electrode that reads TFT (TFT2 etc.) (gate electrode) respectively.
The source electrode of TFT (TFT3 etc.) of resetting is connected with the gate electrode that reads TFT (TFT2 etc.) respectively with one of drain electrode, and another in the source electrode of the TFT that resets (TFT3 etc.) and the drain electrode is connected with the wiring R that resets.
In above-mentioned radiation image pickup device, be attenuated towards the sample radiation emitted that will check, and see through sample, thereby be converted into visible light by the luminescent coating (not shown).Make resulting visible light incide photo-electric conversion element P subsequently, so that be converted into electric charge.Because the generation of these electric charges causes the fluctuation of the electromotive force corresponding with the amount of radiation of light in the gate electrode that reads TFT (TFT2 etc.).
Because the fluctuation of electromotive force, the amount of the electric current that the flowing through of generation read TFT (TFT2 etc.) is changed.So the electric current that changes is sent to signal routing Sig respectively, so that read into the outside by the TFT (TFT4 etc.) that is provided with corresponding to each row pixel by fetch equipment 30 respectively.Resulting signal is amplified by amplifier 50, converts digital signal to by A/D converter 60 subsequently and is kept in the memory device 70.Thereby digital signal can be output.
Switching TFT (TFT1 etc.) is used as switch, applies voltage by it between source electrode that reads TFT (TFT2 etc.) and grid.In addition, after read output signal, the TFT that resets (TFT3 etc.) is driven, to respectively by the electrode application voltage of the photo-electric conversion element P that is connected with the TFT that resets (TFT3 etc.) of wiring R that resets, thereby can remove the electric charge that is accumulated among the photo-electric conversion element P.
With regard to aforesaid source follower (source follower) type radiation image pickup device, must be arranged in a plurality of TFT in the pixel region.Thereby, be similar to correlation technique example and aforesaid embodiment 1 and 2, preferably on TFT, form photo-electric conversion element, so that improve open area ratio.
So, according to embodiment 7, embodiment 1 mode identical as described above with 2, for each TFT element (TFT1-3), adopt a kind of source electrode and drain electrode (first electrode layer) of wherein forming successively, the high doping semiconductor layer, semiconductor layer (first semiconductor layer), the structure of insulating barrier (second insulating barrier) and gate electrode (the second electrode lay).By this structure, form TFT element with stable properties and high driving ability.
Example application
The following describes the example application of embodiment 7.In this example application, the radiation image pickup device of embodiment 7 is applied to utilizing the radioscopic image diagnostic system (radiation image pickup system) of X ray Digital photographic art.An example having represented this radioscopic image diagnostic system among Figure 19.
Radioscopic image diagnostic system shown in Figure 19 is used to take the X-ray photographs of the examine sample (patient) in the inspection chamber of the medical facilities of hospital etc., resulting radioscopic image is carried out image processing (if desired), perhaps export resulting image with the form of film, thereby the doctor can observe the radioscopic image with diagnostic sample from laser printer.As an one example, this radioscopic image diagnostic system comprises and independently is installed in a plurality of rooms respectively, for example a plurality of units and the unit in inspection chamber (comprising X-ray room and control room) and the doctor's office.
One side of X-ray room of inspection chamber, X-ray tube (radiation source) 801 is installed into across patient's sample PS relative with imageing sensor (radiation image pickup device) 802.Thereby during X-ray radiography, the X ray 800 that sends from X-ray tube 801 sees through the part of patient's sample PS that will be taken a picture, incides on the imageing sensor 802.Thereby such as described in example 7 above in imageing sensor 802, the X ray of incident is converted into light signal by luminescent coating, and resulting light signal is converted into electric charge in each photo-electric conversion element in each pixel subsequently.Resulting electric charge is read out by the TFT of correspondence subsequently, so that output to the outside with the form of the signal of telecommunication.Resulting output signal is corresponding to becoming the data of reflection specific to the basis of the radioscopic image of the X-ray absorption coefficient of the part of being taken a picture of patient's sample PS.
On the other hand, the image processor 803 that is connected with imageing sensor 802 with X-ray tube 801 is installed in control room one side of inspection chamber with the display device 804 that is connected with image processor 803.Thereby, during X-ray radiography, in image processor 803, except various control operations and the various control operations about X-ray tube about recording condition, also the signal of telecommunication that imageing sensor 802 is detected carries out the various image processing about the radioscopic image data.The radioscopic image of the patient's sample PS that obtains by such processing is displayed on the display device 804 subsequently.
In addition, the film processor 806 by network 805 (for example local area network (LAN)) image processor 803 interior with being installed in inspection chamber is connected is installed in the doctor's office with display device 807 with the doctor who is connected with film processor 806.Thereby the radioscopic image data that obtain by above-mentioned X-ray radiography etc. are exported from laser printer with the form of film 808 by film processor 806, also are displayed on the doctor in addition with on the display device 807, so that observe and the diagnosis X radial image.
The radiation image pickup device that should note embodiment 1-7 does not really want to be confined to the imageing sensor for the usefulness of the radioscopic image diagnostic system of above-mentioned example application, thereby can be applied to radiation image pickup device or analog for the usefulness of other radiation image pickup system.
Though embodiments of the invention have been described above, have the following describes suitable Implementation Modes of the present invention.
Implementation Modes 1
A kind of wherein the layout includes the sensor element that is used for incident light is converted to the signal of telecommunication, with the optical-electrical converter of a plurality of pixels of the thin-film transistor that is connected with sensor element,
Wherein the electrode of the sensor element that is connected with thin-film transistor is disposed on the thin-film transistor, and thin-film transistor has the top gate type structure, and in described top gate type structure, semiconductor layer, gate insulator and gate electrode layer stack gradually on substrate.
A kind of optical-electrical converter according to Implementation Modes 1, wherein thin-film transistor is by being connected in series mutually, and uses a plurality of thin-film transistors of same grid wiring to constitute.
A kind of optical-electrical converter according to Implementation Modes 2, wherein a plurality of thin-film transistors comprise: transmit a plurality of transmission thin-film transistors from the signal of telecommunication of sensor element respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
A kind of optical-electrical converter according to Implementation Modes 2, wherein a plurality of thin-film transistors comprise: receive respectively from the signal of telecommunication of the sensor element a plurality of amplification thin-film transistors as its input; Export a plurality of transmission thin-film transistors of the signal of telecommunication respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
The optical-electrical converter one of any according to Implementation Modes 2-4, wherein each channel region of a plurality of thin-film transistors is wider than each gate electrode of a plurality of thin-film transistors.
A kind of radiation image pickup device comprises one of any optical-electrical converter that requires according to Implementation Modes 1-5; The converting unit that radiation is converted to light with the light incident side that is arranged on optical-electrical converter.
Implementation Modes 7
A kind of wherein the layout includes the sensor element that is used for incident light is converted to the signal of telecommunication, with the radiation image pickup device of a plurality of pixels of the thin-film transistor that is connected with sensor element,
The electrode that it is characterized in that the sensor element that is connected with thin-film transistor is disposed on the thin-film transistor, and thin-film transistor has the top gate type structure, and in described top gate type structure, semiconductor layer, gate insulator and gate electrode layer stack gradually on substrate.
Implementation Modes 8
A kind of radiation image pickup device according to Implementation Modes 7, wherein thin-film transistor is by being connected in series mutually, and uses a plurality of thin-film transistors of same grid wiring to constitute.
A kind of radiation image pickup device according to Implementation Modes 7, wherein holding capacitor is connected with sensor element.
A kind of radiation image pickup device according to Implementation Modes 8, wherein a plurality of thin-film transistors comprise: transmit a plurality of transmission thin-film transistors from the signal of telecommunication of sensor element respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
A kind of radiation image pickup device according to Implementation Modes 8, wherein a plurality of thin-film transistors comprise: receive respectively from the signal of telecommunication of the sensor element a plurality of amplification thin-film transistors as its input; Export a plurality of transmission thin-film transistors of the signal of telecommunication respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
The radiation image pickup device one of any according to Implementation Modes 8-11, wherein each channel region of a plurality of thin-film transistors is wider than each gate electrode of a plurality of thin-film transistors.
A kind of radiation image pickup device, wherein, pixel is disposed on the dielectric substrate with matrix form, and described pixel comprises at least: a plurality of semiconductor conversion element that radiation converted to electric charge; With a plurality of thin-film transistors (TFT) that are formed under a plurality of semiconductor conversion element,
Wherein thin-film transistor has source electrode and the drain electrode that is formed at successively on the dielectric substrate, high doping semiconductor layer, semiconductor layer, insulating barrier and gate electrode.
According to the radiation image pickup device of Implementation Modes 13, wherein the gate electrode of thin-film transistor is formed like this, so that overlapping with source electrode and drain electrode.
According to the radiation image pickup device of Implementation Modes 13, wherein the gate electrode of thin-film transistor is formed like this, so that not overlapping with source electrode and drain electrode.
According to the radiation image pickup device of Implementation Modes 13, wherein use high doping semiconductor layer cover film transistorized source electrode and drain electrode.
The radiation image pickup device one of any according to Implementation Modes 13-16 is characterized in that forming insulating barrier between dielectric substrate and thin-film transistor.
According to the radiation image pickup device of Implementation Modes 17, wherein be formed at insulating barrier between dielectric substrate and the thin-film transistor by SiN, SiO
2Make with SiON is one of any.
A kind of radiation image pickup device, wherein, pixel is disposed on the dielectric substrate with matrix form, and described pixel comprises: the wavelength conversion unit that is used for radiation is carried out wavelength Conversion; Be used for the radiation after the wavelength Conversion is converted to a plurality of semiconductor conversion element of electric charge; With a plurality of thin-film transistors that are formed under the semiconductor conversion element,
It is characterized in that thin-film transistor has source electrode and the drain electrode that is formed at successively on the dielectric substrate, high doping semiconductor layer, semiconductor layer, insulating barrier and gate electrode.
A kind of radiation image pickup system is characterized in that comprising:
The radiation image pickup device one of any according to Implementation Modes 6-19;
According to the signal of telecommunication that obtains from radiation image pickup device, produce treatment of picture device as the object of image pickup; With
The display unit of the image that display processing unit produces.
As mentioned above, according to the present invention, can be arranged in sensor element on the TFT, and special shielding construction needn't be provided.Thereby,, under the situation of pixel size reduction (ratio is dwindled), also can guarantee open area ratio, i.e. sensitivity even in cause owing to high definition.In addition, can avoid the reduction of the picture quality that the generation owing to the leakage current of TFT causes.
Because under the situation that does not break away from the spirit and scope of the present invention, can make obviously big different embodiment of the present invention, therefore except as limiting in the claim, the present invention is not limited to certain embodiments.
Claims (20)
1, a kind of optical-electrical converter that comprises a plurality of pixels, each pixel includes the sensor element that is used for incident light is converted to the signal of telecommunication, with the thin-film transistor that is connected with sensor element,
Wherein the electrode of the sensor element that is connected with thin-film transistor is disposed on the thin-film transistor, and thin-film transistor has the top gate type structure, and in described top gate type structure, semiconductor layer, gate insulator and gate electrode layer stack gradually on substrate.
2, according to the described optical-electrical converter of claim 1, wherein thin-film transistor is by being connected in series mutually, and uses a plurality of thin-film transistors of same grid wiring to constitute.
3, according to the described optical-electrical converter of claim 2, wherein a plurality of thin-film transistors comprise: transmit a plurality of transmission thin-film transistors from the signal of telecommunication of sensor element respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
4, according to the described optical-electrical converter of claim 2, wherein a plurality of thin-film transistors comprise: receive respectively from the signal of telecommunication of the sensor element a plurality of amplification thin-film transistors as its input; Export a plurality of transmission thin-film transistors of the signal of telecommunication respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
5, according to one of any described optical-electrical converter of claim 2-4, wherein each channel region of a plurality of thin-film transistors is wider than each gate electrode of a plurality of thin-film transistors.
6, a kind of radiation image pickup device comprises: according to one of any described optical-electrical converter of claim 1-5; The converting unit that radiation is converted to light with the light incident side that is arranged on optical-electrical converter.
7, a kind of radiation image pickup device that comprises a plurality of pixels, each pixel includes the sensor element that is used for incident light is converted to the signal of telecommunication, with the thin-film transistor that is connected with sensor element,
Wherein the electrode of the sensor element that is connected with thin-film transistor is disposed on the thin-film transistor, and thin-film transistor has the top gate type structure, and in described top gate type structure, semiconductor layer, gate insulator and gate electrode layer stack gradually on substrate.
8, according to the described radiation image pickup device of claim 7, wherein thin-film transistor is by being connected in series mutually, and uses a plurality of thin-film transistors of same grid wiring to constitute.
9, according to the described radiation image pickup device of claim 7, wherein holding capacitor is connected with sensor element.
10, according to the described radiation image pickup device of claim 8, wherein a plurality of thin-film transistors comprise: transmit a plurality of transmission thin-film transistors from the signal of telecommunication of sensor element respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
11, according to the described radiation image pickup device of claim 8, wherein a plurality of thin-film transistors comprise: receive respectively from the signal of telecommunication of the sensor element a plurality of amplification thin-film transistors as its input; Export a plurality of transmission thin-film transistors of the signal of telecommunication respectively; A plurality of thin-film transistors that reset of reseting sensor element respectively.
12, according to one of any described radiation image pickup device of claim 8-11, wherein each channel region of a plurality of thin-film transistors is wider than each gate electrode of a plurality of thin-film transistors.
13, a kind of radiation image pickup device, wherein pixel is disposed on the dielectric substrate with matrix form, and described pixel comprises at least: a plurality of semiconductor conversion element that radiation converted to electric charge; With a plurality of thin-film transistors (TFT) that are formed under described a plurality of semiconductor conversion element,
Wherein thin-film transistor has source electrode and the drain electrode that is formed at successively on the dielectric substrate, the semiconductor layer of doping impurity, semiconductor layer, insulating barrier and gate electrode.
14, according to the described radiation image pickup device of claim 13, wherein the gate electrode of thin-film transistor and source electrode and drain electrode are overlapping.
15, according to the described radiation image pickup device of claim 13, wherein the gate electrode of thin-film transistor is not overlapping with source electrode and drain electrode.
16, according to the described radiation image pickup device of claim 13, wherein the source electrode of thin-film transistor and drain electrode are covered by the semiconductor layer of doping impurity.
17, according to one of any described radiation image pickup device of claim 13-16, wherein between dielectric substrate and thin-film transistor, form insulating barrier.
18,, wherein be formed at insulating barrier between dielectric substrate and the thin-film transistor by SiN, SiO according to the described radiation image pickup device of claim 17
2Make with SiON is one of any.
19, a kind of radiation image pickup device, wherein pixel is disposed on the dielectric substrate with matrix form, and described pixel comprises: the wavelength conversion unit that radiation is carried out wavelength Conversion; Radiation after the wavelength Conversion is converted to a plurality of semiconductor conversion element of electric charge; With a plurality of thin-film transistors that are formed under the semiconductor conversion element,
Wherein thin-film transistor has source electrode and the drain electrode that is formed at successively on the dielectric substrate, the semiconductor layer of doping impurity, semiconductor layer, insulating barrier and gate electrode.
20, a kind of radiation image pickup system comprises:
According to one of any described radiation image pickup device of claim 6-19;
According to the signal of telecommunication that obtains from radiation image pickup device, produce treatment of picture device as the shooting object; With
The display unit of the image that display processing unit produces.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP036833/2003 | 2003-02-14 | ||
| JP036832/2003 | 2003-02-14 | ||
| JP2003036832A JP2004265932A (en) | 2003-02-14 | 2003-02-14 | Radiation imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1748315A true CN1748315A (en) | 2006-03-15 |
| CN100438052C CN100438052C (en) | 2008-11-26 |
Family
ID=33112047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800040785A Expired - Fee Related CN100438052C (en) | 2003-02-14 | 2004-02-10 | Radiation image pickup device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004265932A (en) |
| CN (1) | CN100438052C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629610A (en) * | 2012-03-27 | 2012-08-08 | 北京京东方光电科技有限公司 | Array substrate of X-ray detection device and manufacturing method thereof |
| CN102881701A (en) * | 2012-09-19 | 2013-01-16 | 北京京东方光电科技有限公司 | TFT (thin film transistor) flat X-ray sensor and method for manufacturing same |
| CN103259983A (en) * | 2013-03-13 | 2013-08-21 | 上海奕瑞光电子科技有限公司 | Flat-plate image sensor |
| WO2013143296A1 (en) * | 2012-03-27 | 2013-10-03 | 北京京东方光电科技有限公司 | Array substrate of x-ray detection device and manufacturing method thereof |
| CN103456753A (en) * | 2012-05-28 | 2013-12-18 | 索尼公司 | Image pickup unit and image pickup display system |
| CN102082158B (en) * | 2006-10-25 | 2015-06-03 | 索尼株式会社 | Solid-state imaging device and electronic device |
| CN104851897A (en) * | 2014-02-14 | 2015-08-19 | 佳能株式会社 | Radiation detection apparatus and radiation detection system |
| CN110557586A (en) * | 2016-05-31 | 2019-12-10 | 索尼半导体解决方案公司 | Light detection device, advanced driving assistance system, and autonomous driving system |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4480147B2 (en) | 2004-09-13 | 2010-06-16 | キヤノン株式会社 | Imaging apparatus and control method thereof |
| JP5159065B2 (en) * | 2005-08-31 | 2013-03-06 | キヤノン株式会社 | Radiation detection apparatus, radiation imaging apparatus, and radiation imaging system |
| JP5280671B2 (en) * | 2006-12-20 | 2013-09-04 | 富士フイルム株式会社 | Image detector and radiation detection system |
| KR101034474B1 (en) * | 2009-01-21 | 2011-05-17 | (주)세현 | X-ray detector and method for manufacturing the x-ray detector |
| KR101034463B1 (en) * | 2009-01-21 | 2011-06-16 | 주식회사 아트라임 | X-ray detector and method for manufacturing the x-ray detector |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286855A (en) * | 1985-10-14 | 1987-04-21 | Fuji Photo Film Co Ltd | Solid-state image pickup element for radiation |
| JPS63172470A (en) * | 1987-01-12 | 1988-07-16 | Fujitsu Ltd | Thin film transistor |
| JPH01220862A (en) * | 1988-02-29 | 1989-09-04 | Seiko Epson Corp | Solid-state image sensing device |
| JPH02260460A (en) * | 1989-03-31 | 1990-10-23 | Casio Comput Co Ltd | Thin-film transistor |
| JPH03185840A (en) * | 1989-12-15 | 1991-08-13 | Casio Comput Co Ltd | Thin film transistor |
| JP2805035B2 (en) * | 1990-05-29 | 1998-09-30 | 株式会社 半導体エネルギー研究所 | Thin film transistor |
| JPH10313122A (en) * | 1998-05-27 | 1998-11-24 | Semiconductor Energy Lab Co Ltd | Thin-film transistor |
| JP3421580B2 (en) * | 1998-06-22 | 2003-06-30 | 株式会社東芝 | Imaging device |
| JP3489782B2 (en) * | 1999-02-24 | 2004-01-26 | 株式会社東芝 | X-ray imaging device |
| JP2001308306A (en) * | 2000-04-21 | 2001-11-02 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its driving method |
| JP3589954B2 (en) * | 2000-07-04 | 2004-11-17 | シャープ株式会社 | Electromagnetic wave detector, image detector, and method of manufacturing electromagnetic wave detector |
| JP2002124655A (en) * | 2000-10-17 | 2002-04-26 | Canon Inc | System for converting electromagnetic waves into electrical signal, and image sensor |
| KR100763137B1 (en) * | 2000-12-29 | 2007-10-02 | 엘지.필립스 엘시디 주식회사 | Fabricating Method of X-ray Detecting Device |
| JP2002289824A (en) * | 2001-03-28 | 2002-10-04 | Canon Inc | Photodetector, radiation detector and radiation imaging system |
| JP2002303673A (en) * | 2001-04-03 | 2002-10-18 | Canon Inc | Radiation detector assembly and radiation imaging system using the same |
| JP2003023144A (en) * | 2001-07-06 | 2003-01-24 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
-
2003
- 2003-02-14 JP JP2003036832A patent/JP2004265932A/en active Pending
-
2004
- 2004-02-10 CN CNB2004800040785A patent/CN100438052C/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082158B (en) * | 2006-10-25 | 2015-06-03 | 索尼株式会社 | Solid-state imaging device and electronic device |
| WO2013143296A1 (en) * | 2012-03-27 | 2013-10-03 | 北京京东方光电科技有限公司 | Array substrate of x-ray detection device and manufacturing method thereof |
| WO2013143295A1 (en) * | 2012-03-27 | 2013-10-03 | 北京京东方光电科技有限公司 | Array substrate of x-ray detection device and manufacturing method thereof |
| CN102629610A (en) * | 2012-03-27 | 2012-08-08 | 北京京东方光电科技有限公司 | Array substrate of X-ray detection device and manufacturing method thereof |
| CN103456753B (en) * | 2012-05-28 | 2017-08-11 | 索尼半导体解决方案公司 | Camera device and shooting display system |
| CN103456753A (en) * | 2012-05-28 | 2013-12-18 | 索尼公司 | Image pickup unit and image pickup display system |
| CN102881701A (en) * | 2012-09-19 | 2013-01-16 | 北京京东方光电科技有限公司 | TFT (thin film transistor) flat X-ray sensor and method for manufacturing same |
| CN102881701B (en) * | 2012-09-19 | 2015-01-07 | 北京京东方光电科技有限公司 | TFT (thin film transistor) flat X-ray sensor and method for manufacturing same |
| CN103259983A (en) * | 2013-03-13 | 2013-08-21 | 上海奕瑞光电子科技有限公司 | Flat-plate image sensor |
| CN103259983B (en) * | 2013-03-13 | 2017-02-08 | 上海奕瑞光电子科技有限公司 | Flat-plate image sensor |
| CN104851897A (en) * | 2014-02-14 | 2015-08-19 | 佳能株式会社 | Radiation detection apparatus and radiation detection system |
| CN104851897B (en) * | 2014-02-14 | 2017-09-01 | 佳能株式会社 | Radiation detecting apparatus and radiation detection system |
| CN110557586A (en) * | 2016-05-31 | 2019-12-10 | 索尼半导体解决方案公司 | Light detection device, advanced driving assistance system, and autonomous driving system |
| US11082651B2 (en) | 2016-05-31 | 2021-08-03 | Sony Semiconductor Solutions Corporation | Imaging apparatus and imaging method, camera module, and electronic apparatus capable of detecting a failure in a structure in which substrates are stacked |
| US11089248B2 (en) | 2016-05-31 | 2021-08-10 | Sony Semiconductor Solutions Corporation | Imaging apparatus and imaging method, camera module, and electronic apparatus capable of detecting a failure in a structure in which substrates are stacked |
| CN110557586B (en) * | 2016-05-31 | 2022-02-18 | 索尼半导体解决方案公司 | Light detection device, advanced driving assistance system, and autonomous driving system |
| US11588990B2 (en) | 2016-05-31 | 2023-02-21 | Sony Semiconductor Solutions Corporation | Imaging apparatus and imaging method, camera module, and electronic apparatus capable of detecting a failure in a structure in which substrates are stacked |
| US11843881B2 (en) | 2016-05-31 | 2023-12-12 | Sony Semiconductor Solutions Corporation | Imaging apparatus and imaging method, camera module, and electronic apparatus capable of detecting a failure in a structure in which substrates are stacked |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100438052C (en) | 2008-11-26 |
| JP2004265932A (en) | 2004-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1748314A (en) | Solid-state image pickup device and radiation image pickup device | |
| KR100755287B1 (en) | Radiation image pickup device | |
| CN1260954C (en) | Radiographic apparatus | |
| CN1292485C (en) | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system | |
| JP5043374B2 (en) | Conversion device, radiation detection device, and radiation detection system | |
| CN1751393A (en) | Solid state image pickup apparatus and radiation image pickup apparatus | |
| US8164065B2 (en) | Radiation detecting apparatus, and radiation image pickup system | |
| KR101350795B1 (en) | Thin film transistor array substrate for x-ray detector | |
| US7655920B2 (en) | Conversion apparatus, radiation detection apparatus, and radiation detection system | |
| CN1748315A (en) | Radiation image pickup device | |
| US7858947B2 (en) | Image pickup apparatus and radiation image pickup apparatus | |
| JP5406473B2 (en) | Radiation detector | |
| JP5439984B2 (en) | Photoelectric conversion device and radiation imaging device | |
| JP5043373B2 (en) | Conversion device, radiation detection device, and radiation detection system | |
| CN1174491C (en) | Two-dimensional image detector and process for manufacturing the same | |
| CN1252981C (en) | Radiation-ray camera pick-up device and driving method | |
| CN101064786A (en) | Imaging apparatus, radiation imaging apparatus, and radiation imaging system | |
| CN1890957A (en) | Radiation image pick-up device and radiation image pick-up method | |
| US20090218476A1 (en) | Radiation image pickup apparatus, its control method, and radiation image pickup system | |
| CN1474595A (en) | Device and method for image shooting using radiation ray | |
| CN1825609A (en) | Solid-state imager device, drive method of solid-state imager device and camera apparatus | |
| CN1530074A (en) | Radioactive rays image pickup devices | |
| CN1925162A (en) | Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system | |
| JP4054612B2 (en) | Radiation imaging device | |
| JP2007159790A (en) | Radiographic apparatus and radiographic system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20170210 |