CN102629610A - Array substrate of X-ray detection device and manufacturing method thereof - Google Patents
Array substrate of X-ray detection device and manufacturing method thereof Download PDFInfo
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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Abstract
The invention discloses an array substrate of an X-ray detection device and a manufacturing method thereof. The array substrate comprises a thin film transistor device and a photoelectric diode sensor connected with the thin film transistor device, wherein the thin film transistor device comprises a source electrode, a drain electrode, an ohm layer, an active layer, a grid electrode insulating layer and a grid electrode, wherein the source electrode and the drain electrode are formed on a substrate base plate; the ohm layer is formed above the source electrode and the drain electrode; the active layer is formed above the ohm layer and forms a channel with the source electrode and the drain electrode; the grid electrode insulating layer is formed above the active layer and covers the whole base plate; and the grid electrode forms above the grid electrode insulating layer and is positioned above the active layer. The array substrate and the manufacturing method thereof have the beneficial effects that as the thin film transistor device is of a top grid type structure, the channel can be protected while a photoelectric diode and a transparent electrode are etched, so that the mask process forming process of a channel blocking layer is omitted, the manufacturing process of the array substrate is simplified, and the productivity is improved; through the top grid type grid electrode, light rays are effectively blocked, so that the current leaked from the channel is greatly reduced; and a light shade is not required to be additionally arranged, so that the production cost is further reduced.
Description
Technical field
The present invention relates to digital X-ray image detection technique, particularly relate to a kind of array base palte and manufacturing approach thereof of x-ray detection device.
Background technology
The fast development of thin-film transistor technologies has driven the application of active matrix X ray detection technique, and it mainly is that the plane is detected that X ray detects, and the X ray shooting all is to use film recording light image in the last hundred years.The notion of issue word medical X-ray shooting is suggested as far back as early 1970s, and the revolutionary character that stores transmission system along with transmission of digital medical image and image develops, and directly drives the application of digital X-ray camera technique.Be different from charge coupled cell (Charge Coupled device; CCD) with complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductors; CMOS) digital X-ray shooting; The flat image detector provides large tracts of land detection and the advantage that does not take up space; Effectively save spacious day time-consuming flow process of traditional X-ray ray detection, the digital X-ray image system is fully than the processing time of 4 times of traditional computer radiography system saves, the high resolution display panel of arranging in pairs or groups simultaneously reach develop efficiency, the medical environment of diagnosis accuracy and no egative film.And the active matrix area detector is applied in the nondestructive testing; Under the situation of not destroying sample to be detected; In time detect the physics or the engineering properties of determinand, like about 50 microns slight crack, hole; Microdefect can detect easily, particularly on electronics, aerospace and auto industry, is widely used.
As depicted in figs. 1 and 2, the array base palte of existing X-ray detector generally includes at each pixel region: photodiode sensor spare 200 and film transistor device 300.Wherein, the main effect of photodiode sensor spare is to receive light, and converts light signal to the signal of telecommunication through photovoltaic effect, and the main effect of film transistor device is as the control switch and the signal of telecommunication that transmits the photovoltaic effect generation.
The operation principle of existing X-ray detector is: when X ray 101 bombardments in 102 last times of fluorescent material; The luminous ray that sees through fluorescent material 102 generations incides on the photodiode sensor spare 200 of array base palte; Because photovoltaic effect; Convert light signal into the signal of telecommunication, the signal of telecommunication is input to the control circuit of X-ray detector through the switch control of film transistor device 300.
As shown in Figure 3, prior art adopts 9 preparations that mask is accomplished whole X-ray detector array base palte, and its main technique step is:
The defective that prior art exists is; For avoiding when forming photodiode sensor spare, having influence on the uniformity of established film transistor device active layer raceway groove; Need above active layer, form a raceway groove barrier layer through a mask process (step 103); This has increased the complexity of array base palte manufacturing process undoubtedly, and production capacity is difficult to be promoted; In addition, for reducing the influence of film transistor device channel leakage stream, need to increase a metal light shield and cover up the light that X ray impact fluorescence powder produces, this also makes manufacturing cost further to reduce.
Summary of the invention
The array base palte and the manufacturing approach thereof that the purpose of this invention is to provide a kind of x-ray detection device; Need to adopt a mask process to go to form the raceway groove barrier layer in addition in order to solve the x-ray detection device array base palte that exists in the prior art; Manufacturing process is loaded down with trivial details, cost is higher, the difficult technical problem that promotes of production capacity.
The array base palte of x-ray detection device of the present invention comprises: film transistor device and the photodiode sensor spare that links to each other with film transistor device, and wherein, said film transistor device comprises:
Be formed at source electrode and drain electrode on the underlay substrate;
Ohm layer on being formed at source electrode and draining;
Be formed on the ohm layer and and form the active layer of raceway groove with draining with source electrode;
Be formed on the active layer and cover the gate insulator of whole base plate;
Be formed on the gate insulator, and be positioned at the grid of active layer top.
Wherein, said grid material is preferably heavy metal or heavy metal alloy.
Wherein, said photodiode sensor spare comprises:
Be formed on the gate insulator and the reflector layer that is connected with drain electrode;
Be formed at the photodiode on the reflector layer;
Be formed at the transparency electrode on the photodiode;
The bias electrode that above transparency electrode, is connected with transparency electrode.
Preferably, said photodiode is a PIN type photodiode.
The array base palte of x-ray detection device of the present invention further comprises:
Be formed on grid and the transparency electrode and cover first passivation layer of whole base plate;
Be formed on the connection electrode on said first passivation layer;
Second via hole of connection bias electrode of on said first passivation layer, offering and first via hole of transparency electrode, connection metal and drain electrode and the 3rd via hole of connection metal and reflector layer.
The manufacturing approach of x-ray detection device array base palte of the present invention comprises: form the step of film transistor device and photodiode sensor spare, the step that wherein forms film transistor device comprises:
On underlay substrate, form source electrode, drain electrode and ohm layer figure through mask process;
On the substrate that forms source electrode, drain electrode and ohm layer figure, form active layer pattern through mask process;
On the substrate that forms active layer pattern, form gate insulator;
On the substrate that forms gate insulator, form gate patterns through mask process.
Wherein, the step of formation photodiode sensor spare comprises:
When forming gate patterns, pass through to form the reflector layer figure with a mask process;
On the substrate that forms the reflector layer figure, form photodiode and transparency electrode figure through mask process.
Wherein, when forming photodiode and transparency electrode figure, comprise the steps:
On reflector layer, deposit n type semiconductor layer;
Deposition I type semiconductor layer on n type semiconductor layer;
On the I type semiconductor layer, deposit p type semiconductor layer;
Deposit transparent electrode layer on p type semiconductor layer;
Form photodiode and transparency electrode figure through mask process.
Further, after forming gate patterns and photodiode, transparency electrode figure, comprise step:
On whole base plate, cover first passivation layer, be formed for connecting first via hole and second via hole and the 3rd via hole that are used to be connected drain electrode and reflector layer of bias electrode and transparency electrode through mask process;
Form bias electrode figure and the metallic pattern that is connected that is connected drain electrode and reflector layer through mask process.
In the array base palte of x-ray detection device of the present invention, because film transistor device is the top gate type structure, raceway groove is positioned at the grid below; Therefore; When carrying out the etching of photodiode and transparency electrode, grid can make raceway groove receive effective protection and be unaffected, has saved the mask process forming process on raceway groove barrier layer in the prior art; Simplify the manufacturing process of array base palte, improved production capacity; In addition,, make channel leakage stream significantly reduce, need not to be provided with in addition again light shield, when simplifying production technology, further reduced production cost because the grid of top gate type thin film transistor device can effectively shut out the light.
Description of drawings
Fig. 1 is a prior art x-ray detection device array base palte cross-sectional view;
Fig. 2 detects the theory structure sketch map for the prior art x-ray detection device;
Fig. 3 is a prior art x-ray detection device array base palte manufacturing process key step flow chart;
Fig. 4 is an x-ray detection device array base palte cross-sectional view of the present invention;
Fig. 5 is an x-ray detection device array base palte manufacturing process key step flow chart of the present invention;
Fig. 6 is a vertical view behind the present invention's mask process exposure imaging first time;
Fig. 7 is a sectional view behind the present invention's mask process exposure imaging first time;
Fig. 8 is a vertical view after the present invention's mask process etching first time;
Fig. 9 is a sectional view after the present invention's mask process etching first time;
Figure 10 is a vertical view after the present invention's mask process etching second time;
Figure 11 is a sectional view after the present invention's mask process etching second time;
Figure 12 is the present invention's vertical view after the mask process etching for the third time;
Figure 13 is the present invention's sectional view after the mask process etching for the third time;
Figure 14 is vertical view after the 4th mask process etching of the present invention;
Figure 15 is sectional view after the 4th mask process etching of the present invention;
Figure 16 is vertical view after the 5th mask process etching of the present invention;
Figure 17 is vertical view after the 6th mask process etching of the present invention;
Figure 18 is a sectional view after the 7th mask process of the present invention (the signal guidance district connects the data wire via hole) etching;
Figure 19 is a sectional view after the 7th mask process of the present invention (the signal guidance district connects the grid line via hole) etching;
Figure 20 is sectional view after the 8th mask process of the present invention (transparency electrode that the signal guidance district is connected with the data wire) etching;
Figure 21 is sectional view after the 8th mask process of the present invention (transparency electrode that the signal guidance district is connected with the grid line) etching.
Description of reference numerals:
The prior art Reference numeral:
10 underlay substrates, 11 grids, 12 gate insulators
13 active layers, 14 raceway groove barrier layers, 15 source electrodes
16 drain electrodes, 17 reflector layer 18N N-type semiconductor Ns
19I N-type semiconductor N 20P N-type semiconductor N 21 transparency electrodes
22 first passivation layers, 23 first via holes, 24 bias electrodes
25 second via holes, 26 holding wires, 27 light shields
28 second passivation layers, 29 ohm layer 101X light
102 fluorescent material, 200 photodiode sensor spares, 300 film transistor devices
Reference numeral of the present invention:
50 underlay substrates, 51 grids, 52 gate insulators
53 active layers, 69 ohm layers, 55 source electrodes
56 drain electrodes, 57 reflector layer 58N N-type semiconductor Ns
59I N-type semiconductor N 60P N-type semiconductor N 61 transparency electrodes
62 first passivation layers, 63 first via holes, 64 bias electrodes
65 second via holes 70 the 3rd via hole 71 connects metal
68 second passivation layer 51a grid line 5556a data wires
The transparency electrode 5556 source-drain electrode metal levels in 61a signal guidance district
100 photoresists, 690 ohm layers (before the etching)
Embodiment
Need to adopt a mask process to go to form the raceway groove barrier layer in addition in order to solve the x-ray detection device array base palte that exists in the prior art; Manufacturing process is loaded down with trivial details, cost is higher; Production capacity is the technical problem of difficulty lifting, the invention provides a kind of array base palte and manufacturing approach thereof of x-ray detection device.
For the advantage that makes technical scheme of the present invention is clearer, the array base palte and the manufacturing approach thereof of x-ray detection device of the present invention are done detailed description below in conjunction with accompanying drawing.Obviously, the accompanying drawing in describing below only is specific embodiments more of the present invention, for those of ordinary skill in the art, is not paying under the creationary prerequisite, can also obtain other accompanying drawing according to these accompanying drawings.
As shown in Figure 4; The array base palte of x-ray detection device of the present invention; Comprise: film transistor device and the photodiode sensor spare that links to each other with film transistor device; Wherein, said film transistor device comprises: be formed at source electrode 55 and drain electrode 56 on the underlay substrate 50 (can be glass substrate, plastic base or other substrates); Be formed at the ohm layer 29 on source electrode 55 and the drain electrode 56; Be formed on the ohm layer 29 and form the active layer 53 of raceway grooves with source electrode 55 and drain electrode 56; Be formed on the active layer 53 and cover the gate insulator 52 of whole base plate; Be formed on the gate insulator 52, and be positioned at the grid 51 of active layer 53 tops.
Wherein, grid 51 preferred difficult heavy metal or the heavy metal alloy that penetrates of X ray, for example copper, lead or the Pot metals etc. of adopting.
In the embodiment shown in fig. 4, photodiode sensor spare comprises: be formed on the gate insulator 52 and the reflector layer 57 that is connected with drain electrode 56; Be formed at the photodiode on the reflector layer 57; Be formed at the transparency electrode 61 on the photodiode; The bias electrode 64 that above transparency electrode 61, is connected with transparency electrode 61.
Wherein, it is identical with grid 51 materials and forming with in a mask composition technology with grid 51 to be formed at reflector layer 57 on the gate insulator 52; Photodiode can be MIS type photodiode or PIN type photodiode etc.; Preferred PIN type photodiode; PIN type photodiode (P type semiconductor 60, I N-type semiconductor N 59, N type semiconductor 58) is the PN junction between two kinds of semiconductors, and perhaps the adjacent domain of the knot between semiconductor and the metal generates I type layer between P district and N district; Absorbing light radiation and produce a kind of photodetector of photoelectric current, advantages such as junction capacitance is little because it has, transit time weak point, sensitivity height.
Also comprise first passivation layer 62 and second passivation layer 68 in the embodiment shown in fig. 4; Wherein first passivation layer 62 is formed on grid 51 and the transparency electrode 61 and covers whole base plate; On first passivation layer 62, offer first via hole 63, the connection metal 71 that connects bias electrode 64 and transparency electrode 61 and drain 56 second via hole 65 and the 3rd via hole 70 of connection metal 71 and reflector layer 57, promptly be formed on connection electrode 71 on first passivation layer 62 and will drain through second via hole 65 and the 3rd via hole 70 and 56 link to each other with reflector layer 57; Wherein second passivation layer 68 is formed on first passivation layer 62 and covers whole base plate; The transparency electrode 61a in substrate periphery signal guidance district is connected with data wire 5556a through the via hole that connects on first passivation layer 62, second passivation layer 68 and the gate insulator 52, and the via hole through perforation on first passivation layer 62 and second passivation layer 68 is connected with grid line 51a.Passivation layer can adopt inorganic insulating membrane, for example silicon nitride etc., or organic insulating film, for example resin material etc.
In the array base palte of x-ray detection device of the present invention; Because film transistor device is the top gate type structure, raceway groove is positioned at the grid below, and grid can effectively shut out the light; Make channel leakage stream significantly reduce; Need not to be provided with in addition again light shield, when simplifying production technology, further reduced production cost.
To shown in Figure 21, the array base palte of x-ray detection device of the present invention can adopt eight mask production technologies to form altogether like Fig. 5, and its main implementation process comprises:
Step 201: sedimentary origin drain electrode metal level 5556 and ohm layer (before the etching) 690 successively on underlay substrate, through the first time mask process form source electrode 55, drain electrode 56 and ohm layer 69 figures.The source-drain electrode metal level adopts the method deposition of magnetron sputtering, can be the monofilm of aluminium neodymium alloy (AlNd), aluminium (Al), copper (Cu), molybdenum (Mo), molybdenum and tungsten alloy (MoW) or chromium (Cr), the composite membrane that also can be constituted for these metal material combination in any; Ohm layer adopts the method deposition of chemical vapour deposition (CVD), and its material can be doped semiconductor (n+a-Si).During etching, earlier ohm layer (before the etching) 690 is carried out dry etching, and then source-drain electrode metal level 5556 is carried out wet etching.Usually adopt physical vapour deposition (PVD) mode (for example magnetron sputtering method) deposition for metal level, form figure through wet etching, and adopt the chemical vapour deposition (CVD) mode to deposit usually, form figure through dry etching for non-metallic layer.Mask process includes substrate cleaning, photoresist coating, exposure, development, etching, photoresist lift off etc. each time, below repeats no more.
Step 202: on the substrate of completing steps 201, passing through for the second time, mask process forms active layer 53 and raceway groove figure thereof.The active layer material is an amorphous silicon, forms through wet etching in the method deposition back of adopting chemical meteorology deposition.
Step 203: on the substrate of completing steps 202, deposit the figure that gate insulator 52 and gate metal layer are also passed through grid 51 of mask process formation for the third time and reflector layer 57 successively.Wherein, the material of gate insulator 52 is a silicon nitride, and grid 51 adopts identical material with reflector layer 57 and forming with in a mask process, and material is heavy metal or heavy metal alloy, for example Pot metal.
Step 204: on the substrate of completing steps 203, deposit n type semiconductor layer (n+a-Si), I type semiconductor layer (a-Si), p type semiconductor layer (p+a-Si) and transparent electrode layer successively and form the figure of PIN type photodiode (P type semiconductor 60, I N-type semiconductor N 59, N type semiconductor 58) and transparency electrode 61 through the 4th mask process.The transparent electrode layer material can be tin indium oxide etc.
Step 205: deposition first passivation layer 62 on the substrate of completing steps 204, and first via hole 63 that is formed for connecting bias electrode 64 and transparency electrode 61 through the 5th mask process drains 56 and second via hole 65 of reflector layer 57 and the figure of the 3rd via hole 70 with being used to be connected.
Step 206: deposition bias electrode metal on the substrate of completing steps 205, through the 6th mask process form bias electrode 64 figures and identical with bias electrode 64 materials, connect drain 56 and reflector layer 57 be connected metal 71 figures.
Step 207: deposition second passivation layer 68 on the substrate of completing steps 206 is formed for connecting the signal guidance district via pattern of transparency electrode 61 and grid line 51a, data wire 5556a at panel periphery signal welding region through the 7th mask process.
Step 208: on the substrate of completing steps 207,, do not corroded with the metal of protecting the via hole place through the transparency electrode 61a figure (covering signal guidance district via hole) in the 8th mask process formation signal guidance district.
Can find out that from the production process of the array base palte of x-ray detection device of the present invention because film transistor device adopts the top gate type structure, raceway groove is positioned at the grid below; Grid can effectively shut out the light; Therefore, when carrying out the etching of photodiode and transparency electrode, grid can make raceway groove receive effective protection and be unaffected; Saved the mask process forming process on raceway groove barrier layer in the prior art; Can adopt mask process altogether eight times, simplify the manufacturing process of array base palte, improve production capacity; In addition,, make channel leakage stream significantly reduce, need not to be provided with in addition again light shield, when simplifying production technology, further reduced production cost because the grid of the top gate type thin film transistor device of making can effectively shut out the light.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the array base palte of an x-ray detection device is characterized in that, comprising: film transistor device and the photodiode sensor spare that links to each other with film transistor device, and wherein, said film transistor device comprises:
Be formed at source electrode and drain electrode on the underlay substrate;
Ohm layer on being formed at source electrode and draining;
Be formed on the ohm layer and and form the active layer of raceway groove with draining with source electrode;
Be formed on the active layer and cover the gate insulator of whole base plate;
Be formed on the gate insulator, and be positioned at the grid of active layer top.
2. array base palte as claimed in claim 1 is characterized in that, said grid material is heavy metal or heavy metal alloy.
3. array base palte as claimed in claim 1 is characterized in that, said photodiode sensor spare comprises:
Be formed on the gate insulator and the reflector layer that is connected with drain electrode;
Be formed at the photodiode on the reflector layer;
Be formed at the transparency electrode on the photodiode;
The bias electrode that above transparency electrode, is connected with transparency electrode.
4. array base palte as claimed in claim 3 is characterized in that, said photodiode is a PIN type photodiode.
5. array base palte as claimed in claim 3 is characterized in that, further comprises:
Be formed on grid and the transparency electrode and cover first passivation layer of whole base plate;
Be formed on the connection electrode on said first passivation layer;
Said bias electrode of on said first passivation layer, offering of connection and first via hole of said transparency electrode, be connected second via hole of said connection metal and said drain electrode and be connected the 3rd via hole of said connection metal and said reflector layer.
6. the manufacturing approach of an x-ray detection device array base palte is characterized in that, this method comprises the step that forms film transistor device and photodiode sensor spare, and the step that wherein forms film transistor device comprises:
On underlay substrate, form source electrode, drain electrode and ohm layer figure through mask process;
On the substrate that forms source electrode, drain electrode and ohm layer figure, form active layer pattern through mask process;
On the substrate that forms active layer pattern, form gate insulator;
On the substrate that forms gate insulator, form gate patterns through mask process.
7. the manufacturing approach of array base palte as claimed in claim 6 is characterized in that, said grid material is heavy metal or heavy metal alloy.
8. the manufacturing approach of array base palte as claimed in claim 6 is characterized in that, the step that forms photodiode sensor spare comprises:
When forming gate patterns, pass through to form the reflector layer figure with a mask process;
On the substrate that forms the reflector layer figure, form photodiode and transparency electrode figure through mask process.
9. the manufacturing approach of array base palte as claimed in claim 8 is characterized in that, when forming photodiode and transparency electrode figure, comprises the steps:
On reflector layer, deposit n type semiconductor layer;
Deposition I type semiconductor layer on n type semiconductor layer;
On the I type semiconductor layer, deposit p type semiconductor layer;
Deposit transparent electrode layer on p type semiconductor layer;
Form photodiode and transparency electrode figure through mask process.
10. the manufacturing approach of array base palte as claimed in claim 8 is characterized in that, after forming gate patterns and photodiode, transparency electrode figure, further comprises step:
On whole base plate, cover first passivation layer, be formed for connecting first via hole and second via hole and the 3rd via hole that are used to be connected drain electrode and reflector layer of bias electrode and transparency electrode through mask process;
Form bias electrode figure and the metallic pattern that is connected that is connected drain electrode and reflector layer through mask process.
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| CN2012100846938A CN102629610A (en) | 2012-03-27 | 2012-03-27 | Array substrate of X-ray detection device and manufacturing method thereof |
| PCT/CN2012/084607 WO2013143295A1 (en) | 2012-03-27 | 2012-11-14 | Array substrate of x-ray detection device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100846938A CN102629610A (en) | 2012-03-27 | 2012-03-27 | Array substrate of X-ray detection device and manufacturing method thereof |
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