CN109417080A - Optical image acquisition unit, optical image acquisition device and electronic equipment - Google Patents
Optical image acquisition unit, optical image acquisition device and electronic equipment Download PDFInfo
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- CN109417080A CN109417080A CN201880001635.XA CN201880001635A CN109417080A CN 109417080 A CN109417080 A CN 109417080A CN 201880001635 A CN201880001635 A CN 201880001635A CN 109417080 A CN109417080 A CN 109417080A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
Provide a kind of optical image acquisition unit, optical image acquisition device and electronic equipment.The optical image acquisition unit, comprising: micro lens；Light blocking layer is set to below the micro lens, and the light blocking layer is provided with the via hole of the perforation light blocking layer below the micro lens；Photoelectric sensor is set to below the light blocking layer；Wherein, the photoelectric sensor includes thin film transistor (TFT) and photodiode, the micro lens is used to the optical signal above the micro lens converging to the via hole, the optical signal is transmitted to the photodiode via the via hole, the photodiode is used to the optical signal being converted to electric signal, and by the electric signal transmission to the thin film transistor (TFT).Optical signal above micro lens is converged to via hole by micro lens, and optical signal is made to be transmitted to photoelectric sensor via via hole to realize Image Acquisition by the technical solution of the embodiment of the present application, is able to ascend the performance of optical image acquisition product.
Description
Technical field
The invention relates to information technology fields, and more particularly, to a kind of optical image acquisition unit, light
Learn image collecting device and electronic equipment.
Background technique
With the high speed development of terminal industry, biological identification technology is increasingly paid attention to by people, more easily under screen
Biometrics identification technology, such as the functionization of the lower fingerprint identification technology of screen have become needed for masses.
Shielding lower biometrics identification technology is that living things feature recognition mould group is set under display screen, is adopted by optical imagery
Collection is realized and shields lower living things feature recognition.It is higher and higher to the requirement for shielding lower living things feature recognition with the development of end product,
Correspondingly, the requirement to optical image acquisition product is also higher and higher.
Therefore, how the performance of improving optical Image Acquisition product, become a technical problem urgently to be resolved.
Summary of the invention
A kind of optical image acquisition unit, optical image acquisition device and electronic equipment are provided, optical picture is able to ascend
As the performance of acquisition product.
In a first aspect, providing a kind of optical image acquisition unit, comprising:
Micro lens；
Light blocking layer, is set to below the micro lens, and the light blocking layer is provided with the perforation below the micro lens
The via hole of the light blocking layer；
Photoelectric sensor is set to below the light blocking layer；
Wherein, the photoelectric sensor includes thin film transistor (TFT) and photodiode, and the micro lens will be for that will come from institute
It states the optical signal above micro lens and converges to the via hole, the optical signal is transmitted to two pole of photoelectricity via the via hole
Pipe, the photodiode are used to be converted to the optical signal electric signal, and the electric signal transmission is brilliant to the film
Body pipe.
In some possible implementations, the via hole is directed at setting with the photodiode.
In some possible implementations, the focus point of the micro lens is located in the via hole.
In some possible implementations, the aperture of the via hole is greater than or equal to 0.5um.
In some possible implementations, the via hole is cylinder.
In some possible implementations, transmission of the light blocking layer to the light of visible light or 610nm above band
Rate is less than 25%.
In some possible implementations, the optical image acquisition unit further include:
Transparent dielectric layer, is used for transmission the optical signal, and the transparent dielectric layer includes that first medium layer and/or second are situated between
Matter layer, the first medium layer are set between the micro lens and the light blocking layer, and the second dielectric layer is set to described
Between light blocking layer and the photoelectric sensor.
In some possible implementations, the thickness of first transparent dielectric layer is greater than or equal to 4um.
In some possible implementations, the optical image acquisition unit further include:
Passivation layer is set to the top of the light blocking layer.
In some possible implementations, the thin film transistor (TFT) includes:
Reset transistor RST, follow transistor SF and row selection gate transistor RS.
In some possible implementations, the thin film transistor (TFT) further include:
Transfer gate transistor.
In some possible implementations, the material of the micro lens is organic material.
In some possible implementations, the metal layer in the thin film transistor (TFT) includes the company of the photoelectric sensor
Circuit is connect, and/or, the metal layer in the photodiode includes the connection circuit of the photoelectric sensor.
Second aspect provides a kind of optical image acquisition device, comprising:
Optical image acquisition cellular array in any possible implementation of first aspect or first aspect.
The third aspect provides a kind of electronic equipment, in some possible implementations, comprising:
Display screen, and
Optical image acquisition device described in second aspect, wherein the optical image acquisition device is set to described aobvious
Below display screen.
In some possible implementations, the display screen is organic light-emitting diode (OLED) display screen, the display screen
Luminescent layer includes multiple organic light-emitting diode light sources, wherein the optical image acquisition device be living things feature recognition dress
When setting, the biometric devices use at least partly excitation of the organic light-emitting diode light source as living things feature recognition
Light source.
Optical signal above micro lens is converged to via hole by micro lens by the technical solution of the embodiment of the present application,
And optical signal is made to be transmitted to photoelectric sensor via via hole to realize Image Acquisition, it not only can reduce the thickness of product, but also can be with
Image quality is improved, so as to the performance of improving optical Image Acquisition product.
Detailed description of the invention
Fig. 1 is the floor map for the electronic equipment that the application can be applicable in.
Fig. 2 is partial cutaway schematic view of the electronic equipment shown in FIG. 1 along A '-A '.
Fig. 3 is the schematic diagram of the side cross-sectional view of the optical image acquisition unit of the application one embodiment.
Fig. 4 is the schematic diagram of the plane sectional view of the optical image acquisition unit of one embodiment of the invention.
Fig. 5 is the schematic diagram of the side cross-sectional view of the optical image acquisition unit of another embodiment of the present invention.
Specific embodiment
Below in conjunction with attached drawing, technical solutions in the embodiments of the present application is described.
The technical solution of the embodiment of the present application can be applied to various electronic equipments, for example, smart phone, laptop,
The portable or mobiles such as tablet computer, game station calculate equipment and electronic databank, automobile, ATM (automatic teller machine)
Other electronic equipments such as (Automated Teller Machine, ATM), but the embodiment of the present application does not limit this.
The technical solution of the embodiment of the present application can be used for shielding lower optical image acquisition, for example, shielding lower living things feature recognition
Or shield lower concealed pick-up head function etc., wherein living things feature recognition, can also be special for other biological other than fingerprint recognition
Sign identification, for example, vivo identification etc., the embodiment of the present application does not also limit this.The skill of the embodiment of the present application in order to facilitate understanding
Art scheme is first below introduced biometrics identification technology under shielding.
As electronic equipment steps into comprehensive screen epoch, what electronic equipment front physical characteristics collecting region was shielded comprehensively is squeezed
Pressure, thus shield under (Under-display or Under-screen) biometrics identification technology more and more attention has been paid to.Under screen
Biometrics identification technology, which refers to, is mounted on living things feature recognition mould group (such as fingerprint recognition mould group) below display screen, thus
It realizes and carries out living things feature recognition operation in the display area of display screen, do not need in electronic equipment front in addition to display area
Region be arranged physical characteristics collecting region.
Shield lower biometrics identification technology carried out using the light returned from the top surface of equipment display component fingerprint incude with
Other inductive operations.The light of the return carries the information of the object (such as finger) contacted with the top surface, by acquiring and detecting
The light of the return realizes the particular optical sensor module being located at below display screen.The design of optical sensor module can be logical
It crosses and is configured to acquire and detect the optical element of the light returned properly to realize desired optical imagery.
Figures 1 and 2 show that shield the schematic diagram for the electronic equipment 100 that lower biometrics identification technology can be applicable in, wherein
Fig. 1 is the front schematic view of electronic equipment 100, and Fig. 2 is that electronic equipment 100 shown in FIG. 1 shows along the cut-away section structure of A '-A '
It is intended to.
As depicted in figs. 1 and 2, electronic equipment 100 may include display screen 120 and living things feature recognition mould group 140,
In, the display screen 120 has display area 102, and the display screen 120 is arranged in the living things feature recognition mould group 140
Lower section.
The display screen 120 can be self light emitting display panel, use with self luminous display unit as display picture
Element.For example display screen 120 can be Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display screen
Or micro-led (Micro-LED) display screen.In other alternate embodiments, the display screen 120 may be
Liquid crystal display (Liquid Crystal Display, LCD) or other passive light emitting displays, the embodiment of the present application is to this
With no restrictions.
On the other hand, the display screen 120 is specially touching display screen, can not only carry out picture and show, can be with
Touch or the pressing operation for detecting user, to provide a personal-machine interactive interface for user.For example, in a kind of embodiment
In, the electronic equipment 100 may include touch sensor, and the touch sensor can be specially touch panel (Touch
Panel, TP), it can be set on 120 surface of display screen, partially can also integrate or be monolithically integrated into the display
Inside screen 120, to form the touching display screen.
The living things feature recognition mould group 140 can be specially optical bio feature identification mould group, such as optical finger print mould
Group is mainly used for acquiring the biological information (such as information in fingerprint) of user.In the embodiment of the present application, the life
Object feature identification mould group 140 can be arranged at the regional area of 120 lower section of display screen, so that the biology is special
The physical characteristics collecting region (or induction region) 130 of sign identification mould group 140 is at least partially disposed at the display of the display screen 120
Region 102.
As one embodiment, the living things feature recognition mould group 140 may include optical image acquisition device, the light
Learning image collecting device may include multiple optical image acquisition units.More specifically, the living things feature recognition mould group 140
Optical image acquisition device may include the optical bio feature sensor with optical sensor array, such as optical finger print sensing
Device；The optical sensor array includes multiple optical sensor units, and the optical sensor unit corresponds respectively to above-mentioned optical picture
As one of optical image acquisition unit of acquisition device, the optical image acquisition unit can specifically include optical detector
Perhaps the region or photoinduction range of photoelectric sensor and the optical sensor array correspond to the living things feature recognition
The physical characteristics collecting region 130 of mould group 140.As shown in Figure 1, the physical characteristics collecting region 130 is located at the display screen
Among 120 display area 102, therefore, user is needing to be unlocked the electronic equipment 100 or other biological feature
When verifying, it is only necessary to, can be real by finger pressing in the physical characteristics collecting region 130 for being located at the display screen 120
Existing biological characteristic input operation.Since physical characteristics collecting detection can be real in 102 inside of the display area of the display screen 120
Existing, fingerprint key (such as Home key) is arranged without the special reserved space in its front in electronic equipment 100 using the above structure,
It thus can be using screen scheme comprehensively.Therefore, the display area 102 of the display screen 120 can extend substantially to the electronics
The entire front of equipment 100.
By taking the display screen 120 is using OLED display screen as an example, the luminescent layer of the display screen 120 has the embodiment of the present application
There is the OLED display unit array in array arrangement, the living things feature recognition mould group 140 can use the OLED and show
The OLED display unit (i.e. OLED light source) that screen 120 is located at the physical characteristics collecting region 130 is known as biological characteristic detection
Other excitation light source.Of course it is to be understood that the living things feature recognition mould group 140 can also adopt in other substitution implementations
Optical signal for carrying out biological characteristic detection identification is provided with built-in light source or external light source.In this case, light
Learning image acquisition units not only can be adapted for such as OLED display screen self light emitting display panel, and it is aobvious to can be applicable to non-spontaneous light
Display screen, such as liquid crystal display or other passive light emitting displays.Also, the light of the living things feature recognition mould group 140
It learns induction arrays and specifically includes optical detector (Photo detector) array (or for photodetector array, photoelectric sensing
Device array) comprising multiple optical detector/photoelectric sensors in array distribution, the optical detector/photoelectric sensor can
Using as optical sensor unit as described above.
When finger touch, press or close to (for ease of description, referred to collectively herein as pressing) in the biology spy
When levying pickup area 130, in finger reflection and shape occur for the light that the display unit in the physical characteristics collecting region 130 issues
At reflected light, wherein the reflected light can carry the biological information of user's finger.For example, the light is by user hand
After referring to that the fingerprint on surface reflects, since the wrinkle ridge of finger print and the reflected light of line paddy are different, reflected light
Portable belt has the finger print information of user.The reflected light returns to the display screen 120 and by living things feature recognition mould below
The photodetector array of group 140 receives and is converted to corresponding electric signal, i.e. biological characteristic detects signal.The electronics is set
Standby 100 can obtain the biological information of user based on biological characteristic detection signal, and can be with further progress
Biometric matches verifying, to complete the authentication of active user in order to confirm whether it has permission and set to the electronics
Standby 100 carry out corresponding operation.
In other alternate embodiments, the living things feature recognition mould group 140 also be can be set under the display screen 120
The whole region of side, so that the physical characteristics collecting region 130 to be expanded to the entire viewing area of the entire display screen 120
Full frame living things feature recognition is realized in domain 102.
It should be understood that the electronic equipment 100 further includes cover sheet 110, the cover board in specific implementation
110 can be specially transparent cover plate, such as glass cover-plate or sapphire cover board, be located at the top of the display screen 120 simultaneously
The front of the electronic equipment 100 is covered, and 110 surface of the cover sheet is also provided with protective layer.Therefore, the application
In embodiment, so-called finger, which presses the display screen 120, can actually refer to finger pressing above the display screen 120
Cover board 110 or the covering cover board 110 protective layer.
On the other hand, the lower section of the living things feature recognition mould group 140 is also provided with circuit board 150, such as soft
Circuit board (Flexible Printed Circuit, FPC), the living things feature recognition mould group 140 can pass through pad solder
It is realized and its of other peripheral circuits or the electronic equipment 100 to the circuit board 150, and by the circuit board 150
The electrical interconnection and signal transmission of his element.For example, the living things feature recognition mould group 140 can pass through the circuit board 150
Receive the control signal of the processing unit of the electronic equipment 100, and can also be by the circuit board 150 by the biology
Feature detection signal is exported to the processing unit of the electronic equipment 100 or control unit etc..
Due to factors such as space and imaging requirements, to the optical image acquisition device in living things feature recognition mould group 140
Design requirement it is higher and higher.The embodiment of the present application provides a kind of improved optical image acquisition scheme, can be used for biology
Feature identifies and other are needed in the application of optical image acquisition.
Fig. 3 shows the example of the side cross-sectional view of the optical image acquisition unit 200 of the application one embodiment.Fig. 4 is
The example of the plane sectional view of the optical image acquisition unit 200 of the embodiment of the present application.Below with reference to Fig. 3 and Fig. 4 to the figure
As acquisition unit 200 is described in detail.
As shown in figure 3, optical image acquisition unit 200 may include: micro lens 210, light blocking layer 220 and photoelectric sensor
230.Wherein, the photoelectric sensor 230 includes thin film transistor (TFT) 240 and photodiode 250.
The light blocking layer 220 is set to 210 lower section of micro lens, and the light blocking layer 220 is provided with positioned at the micro mirror
First 210 lower section and the via hole 221 of the light blocking layer 220 is penetrated through, the photodiode 250 in the photoelectric sensor 230 is set
It is placed in 221 lower section of via hole.For example, as shown in figure 4, the photodiode 250 can be set in the via hole 221 just
Lower section, i.e., the described photodiode 250 and the alignment setting of the via hole 221.
Optionally, in some embodiments of the present application, optical signal can pass through from the via hole 221, and cannot pass through
The light blocking layer 220.
For example, transmitance of the light blocking layer 220 to the light of specific band (such as visible light or 610nm above band)
Less than 25%, to avoid unnecessary optical signal transmission to the photodiode 250.
Optionally, the light blocking layer 220 can be metal layer.
In the collection process of optical imagery, the optical signal is transmitted to the photodiode via the via hole 221
250, the photodiode 250 is used to the optical signal being converted to electric signal, and by the electric signal transmission to described thin
Film transistor 240.The thin film transistor (TFT) 240 is by the electric signal transmission to the processing unit for being used for signal processing.
The micro lens 210 is used to the optical signal above the micro lens 210 converging to the via hole 221, institute
It states optical signal and is transmitted to the photodiode 250 via the via hole 221.
The micro lens 210 can be the various camera lenses with aggregation feature.Optionally, the focusing of the micro lens 210
Point is located in the via hole 221.The material of the micro lens can be organic material, such as resin.Optionally, the micro lens
210 can be one layer of molding micro lens of full impregnated gelatin layer (micro lens).
The via hole 221 is the aperture in light blocking layer 220, the light for being converged by the micro lens 210.Optionally,
The via hole 221 is cylinder.
Optionally, in some embodiments of the present application, the aperture of the via hole 221 and the thickness of the light barrier 220
It is related.
The diameter of the via hole 221 can be greater than a certain particular value, in order to which the photodiode 250 can receive
Enough optical signals are imaged.For example, the diameter of the via hole 221 can be greater than 0.5um.The diameter of the via hole 221
It is less than predetermined value, to ensure that the light blocking layer 220 can stop unwanted light.For example, the orifice area of the via hole 221
The photosensitive area of the photodiode 250 can be less than, to avoid to the photodiode adjacent with the photodiode 250
Interference, and then improve image resolution ratio.For example, as shown in figure 4, the via hole 221 in the photodiode
The photodiode 250 can be just completely covered in projection on 250.That is, the parameter setting of the via hole 221
Make the optical image acquisition unit 200 that required optical signal be imaged as far as possible and is maximumlly transmitted to the photoelectric sensor
230, without light stop with being maximized.For example, the parameter of the via hole 221 is arranged to the optical imagery
Incident optical signal is maximumlly transmitted to the photodiode to 200 top corresponding region of acquisition unit substantially vertical downward
250, and maximize and stop other optical signals.
In the embodiment of the present application, by the setting of micro lens 210, light blocking layer 220, via hole 221 and photoelectric sensor 230,
Optical signal above micro lens 210 is accumulated to via hole 221, and is transmitted to photoelectric sensor 230 by via hole 221.This
Sample, photoelectric sensor 230 can detecte the optical signal of the corresponding region above micro lens 210, and then can be believed according to light
Number light intensity obtain pixel value.
In addition, forming photoelectric sensor 230, i.e., by the way that photodiode 250 and thin film transistor (TFT) 240 is integrally disposed
It is integrated in TFT technique and prepares photodiode 250 and thin film transistor (TFT) 240.The technical solution of the embodiment of the present application, avoids
Optical image acquisition unit and optical image sensing chip are hung over into the lower section of display screen curtain outside respectively respectively, and then can reduce
The integrated difficulty and cost of system.Additionally it is possible to reduce the thickness of product, and then improve user experience.
The optical signal that the photodiode 250 detects can be used for being formed a pixel of acquisition image, the pixel table
Show the characteristic value of the 200 top corresponding region of optical image acquisition unit.That is, an optical image acquisition unit 200
The signal of acquisition forms a pixel of image, in this way, can be obtained by the signal that multiple optical image acquisition units 200 acquire
To a sub-picture.
For example, each optical image acquisition unit 200 can experience the light intensity that its top is converged by taking fingerprint sensing as an example,
Electric signal is converted to by photoelectric sensor 230 again and forms fingerprint original value.Then, entire knowledge is obtained by splicing ranks pixel
The fingerprint image in other area.
As described above, using the optical image acquisition unit 200 of the embodiment of the present application, pass through the optical signal of corresponding region
Light intensity forms image, relative to the imaging device using lens, is arranged without the concern for object distance etc., thus can be directly arranged at
Under display screen, distance needed for reserving imaging is not needed, so as to reduce the thickness of product.
In the technical solution of the embodiment of the present application, the optical signal in certain area is converged using micro lens 210.
As shown in figure 3, micro lens can increase the incidence angle of central vision compared to the scheme for not using micro lens, increase light
It imports, so as to promote the semaphore that photoelectric sensor 230 detects, and then improves image quality.Meanwhile compared to not adopting
With the scheme of micro lens, micro lens can minimize the interference of adjacent area large angle incidence light, to reduce phase
Cross-interference issue between adjacent unit, and then improve image quality.
Therefore, the technical solution of the embodiment of the present application is converged to the optical signal above micro lens by micro lens
Via hole, and optical signal is made to be transmitted to photoelectric sensor via via hole to realize Image Acquisition, it not only can reduce the thickness of product, but also
Image quality can be improved, so as to the performance of improving optical Image Acquisition product.
In the embodiment of the present application, the photoelectric sensor 230 is for converting optical signals to electric signal.Optionally, described
Photoelectric sensor 230 can use complementary metal oxide semiconductor (Complementary Metal Oxide
Semiconductor, CMOS) device, cmos device can be the semiconductor devices being made of a PN junction, with folk prescription guide
Electrical characteristics.
It should be understood that Fig. 2 is only a kind of example, the restriction to the embodiment of the present application should not be construed as.For example, other can
In alternate embodiment, the optical image acquisition unit 200 can also include:
Wave filtering layer is set to the micro lens 210 into the optical path between the photoelectric sensor 230, non-for filtering
The optical signal of target wave band, through the optical signal (i.e. the optical signal of wave band needed for optical image acquisition) of target wave band.
As shown in figure 4, the thin film transistor (TFT) 240 can include but is not limited to:
Reset transistor (Reset Transistor, RST), follow transistor (Source Follower
Transistor, SF) and row selection gate transistor (Row Select Gate Transistor, RS).
It should be understood that the embodiment of the present application to the concrete type and manufacture craft of the thin film transistor (TFT) 240 without limitation.Example
Such as, in other alternate embodiments, the thin film transistor (TFT) 240 can also include: transfer gate transistor (Transfer
Gate Transistor, Tx).
It should be noted that in the embodiment of the present application, it can be in manufacture craft to the system of the ion of injection and metal layer
Make technique and carry out adjustment appropriate, to meet the electrical requirements of different thin film transistor (TFT)s.In addition, attached between different materials to guarantee
Put forth effort, it is also conceivable to increasing articulamentum, the articulamentum is for connecting the thin film transistor (TFT) 240 and described in appropriate situation
The connection of photodiode 250 and other internal components or external devices.For example, power supply.Optionally, the articulamentum
Material be the materials such as titanium nitride.
Fig. 5 shows the schematic diagram of the optical image acquisition unit 300 of the application another embodiment.It should be understood that Fig. 5 institute
The photodiode 340 shown can be Fig. 3 and photodiode shown in Fig. 4 250, and thin film transistor (TFT) 350 shown in fig. 5 can be with
It is Fig. 3 and thin film transistor (TFT) shown in Fig. 4 240, light barrier 320 shown in fig. 5 can be Fig. 3 and light barrier shown in Fig. 4
220, micro lens 310 shown in fig. 5 can be Fig. 3 and micro lens shown in Fig. 4 210.To avoid repeating, below only to Fig. 3 and
The part that Fig. 4 is not directed to is illustrated.
Optionally, as shown in figure 5, the thin film transistor (TFT) 350 may include:
Substrate 351, the first metal layer 352, the first insulating layer 353, semiconductor layer 354, semiconductor ion implanted layer 355,
Second metal layer 356, second insulating layer 357 and third metal layer 358.Optionally, the substrate 351 is glass substrate.Institute
It states between semiconductor layer 354 and the second insulating layer 357, is provided with the perforation semiconductor ion implanted layer 355 and described
The aperture of second metal layer 356.
Wherein, grid of the first metal layer 252 as the thin film transistor (TFT) 350, the second metal layer 256 are made
For the source electrode of the thin film transistor (TFT), the third metal layer 358 be can be used as the drain electrode of the thin film transistor (TFT) 350 and institute
State the articulamentum between photodiode.Optionally, the electric property of the thin film transistor (TFT) 350 can be by adjusting described half
The size of the aperture of the ion implantation dosage of conductor layer 354 and the second metal layer 356, to meet design requirement.
Optionally, as shown in figure 5, the photodiode 340 may include:
4th metal layer 344, n-type doping semiconductor layer 343, p-type doping semiconductor layer 342 and fifth metal layer 341.
Wherein, the fifth metal layer 341 can be used as the contact electrode of the photodiode 340.
It should be understood that thin film transistor (TFT) 350 and photodiode 340 shown in fig. 5 are only a kind of example of the application, no
It is interpreted as the restriction to the embodiment of the present application.
Optionally, it as shown in figure 5, the optical image acquisition unit 300 may include: transparent dielectric layer, is used for transmission
The optical signal.As shown in figure 5, the transparent dielectric layer includes first medium layer 361 and/or second dielectric layer 360, described
One dielectric layer 361 is set between the micro lens 310 and the light blocking layer 320, and the second dielectric layer 362 is set to described
Between light blocking layer 320 and the photoelectric sensor.
Optionally, as shown in figure 5, the optical image acquisition unit 300 can also include:
Passivation layer 370 is set to the top of the light blocking layer 320, to protect the barn door 320, prevents the shading
Plate 320 is by corrosion equivalent damage.Specifically, the passivation layer 370 can be set in the light blocking layer 320 and the first medium
Between layer 361.But the application to whether above the light shield layer 320 cover passivation layer 370 with no restrictions, other implementation
In example, the passivation layer 370 can also be not provided with.
Optionally, the optical path overall length that the micro lens 310, the first medium layer 361 and the passivation layer 370 form
The focus point of the optical signal by the micro lens 310 is enabled to fall in the via hole 321 of light blocking layer 320.
Optionally, the material of passivation layer 360 can be translucent material.
In the embodiment of the present application, optical signal is focused by the bulge-structure of micro lens 310, and passes through the first medium layer
361 and the optical path that forms of passivation layer 370 fall in focus in the via hole 321 of light blocking layer 320, focus light and be situated between by described second
Matter layer 362 is converged to greatest extent on photodiode 340.Optionally, the size of the via hole 321 and the first medium layer
361 thickness can be carried out emulation by optics and field distribution and be estimated, and determine numerical value eventually by testing.
Optionally, in some embodiments of the present application, the metal layer in the thin film transistor (TFT) includes the photoelectric transfer
The connection circuit of sensor, and/or, the metal layer in the photodiode includes the connection circuit of the photoelectric sensor.
For example, as shown in figure 5, the first metal layer 352, second metal layer 356, third metal layer 358, the 4th metal layer
344 and fifth metal layer 341 at least one metal layer may include the photoelectric sensor connection circuit.
Wherein, the fifth metal layer 341 can be used as the photoelectricity
The preparation process of optical image acquisition unit shown in Fig. 5 is exemplified below.It should be understood that this is only that one kind is shown
Example, should not be construed as the restriction to the embodiment of the present application.
Firstly, preparing thin film transistor (TFT) 350 and photodiode 340；Then, in the thin film transistor (TFT) 350 and photoelectricity
The top of diode 340 prepares second insulating layer 362, and prepares light blocking layer 320, example in the top of the second insulating layer 362
Such as, light blocking layer 320 can be metal layer.Then, then in light blocking layer 320 make via hole 321；It is made above light blocking layer 320 again
Standby passivation layer 370, to be protected to light blocking layer 320.Then, then above passivation layer 370 prepare the first transparent dielectric layer
361.Then, organic material is covered above the first transparent dielectric layer 361, and high-temperature process is carried out to organic material, is obtained with molten
Micro lens 310.
Using the array of above-mentioned optical image acquisition unit 300, optical image acquisition device can be formed.
It should be understood that the preparation process of above-mentioned optical image acquisition unit can actually be the battle array of optical image acquisition unit
The preparation process of column.That is, directly obtaining optical image acquisition cellular array in actual fabrication process.
The embodiment of the present application also provides a kind of electronic equipment, which may include display screen and this above-mentioned Shen
Please embodiment optical image acquisition device, wherein the optical image acquisition device is set to below the display screen.
The electronic equipment can be any electronic equipment with display screen.
Display screen can use the display screen in above description, such as OLED display screen or other display screens, display screen
Related description can be with reference to the description as described in display screen in above description, for sake of simplicity, details are not described herein.
Optionally, the display screen is organic light-emitting diode (OLED) display screen, and the luminescent layer of the display screen includes multiple having
Machine LED source, wherein when the optical image acquisition device is biometric devices, the biological characteristic
Identification device is using at least partly excitation light source of the organic light-emitting diode light source as living things feature recognition.
It should be understood that the specific example in the embodiment of the present application is intended merely to that those skilled in the art is helped to more fully understand
The embodiment of the present application, rather than limit the range of the embodiment of the present application.
It should be understood that the term used in the embodiment of the present application and the appended claims is only merely for the specific reality of description
The purpose for applying example, is not intended to be limiting the embodiment of the present application.For example, being made in the embodiment of the present application and the appended claims
The "an" of singular, " above-mentioned " and "the" are also intended to including most forms, unless context clearly shows that other
Meaning.
Those of ordinary skill in the art may be aware that list described in conjunction with the examples disclosed in the embodiments of the present disclosure
Member can be realized with electronic hardware, computer software, or a combination of the two, can in order to clearly demonstrate hardware and software
Interchangeability generally describes each exemplary composition and step according to function in the above description.These functions are actually
It is implemented in hardware or software, the specific application and design constraint depending on technical solution.Professional technician
Each specific application can be used different methods to achieve the described function, but this realization is it is not considered that exceed
Scope of the present application.
In several embodiments provided herein, it should be understood that disclosed device, device can pass through it
Its mode is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of the unit, only
Only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components can be tied
Another device is closed or is desirably integrated into, or some features can be ignored or not executed.In addition, shown or discussed phase
Mutually between coupling, direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or communication of device or unit
Connection is also possible to electricity, mechanical or other form connections.
The unit as illustrated by the separation member may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, it can and it is in one place, or may be distributed over multiple
In network unit.Some or all of unit therein can be selected to realize the embodiment of the present application scheme according to the actual needs
Purpose.
It, can also be in addition, each functional unit in each embodiment of the application can integrate in one processing unit
It is that each unit physically exists alone, is also possible to two or more units and is integrated in one unit.It is above-mentioned integrated
Unit both can take the form of hardware realization, can also realize in the form of software functional units.
If the integrated unit is realized in the form of SFU software functional unit and sells or use as independent product
When, it can store in a computer readable storage medium.Based on this understanding, the technical solution of the application is substantially
The all or part of the part that contributes to existing technology or the technical solution can be in the form of software products in other words
It embodies, which is stored in a storage medium, including some instructions are used so that a computer
Equipment (can be personal computer, server or the network equipment etc.) executes the complete of each embodiment the method for the application
Portion or part steps.And storage medium above-mentioned includes: USB flash disk, mobile hard disk, read-only memory (ROM, Read-Only
Memory), random access memory (RAM, Random Access Memory), magnetic or disk etc. are various can store journey
The medium of sequence code.
The above, the only specific embodiment of the application, but the protection scope of the application is not limited thereto, it is any
Those familiar with the art within the technical scope of the present application, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should all cover within the scope of protection of this application.Therefore, the protection scope of the application should be with right
It is required that protection scope subject to.
Claims (15)
1. a kind of optical image acquisition unit characterized by comprising
Micro lens；
Light blocking layer, is set to below the micro lens, and the light blocking layer is provided with described in the perforation below the micro lens
The via hole of light blocking layer；
Photoelectric sensor is set to below the light blocking layer；
Wherein, the photoelectric sensor includes thin film transistor (TFT) and photodiode, and the micro lens is described micro- for that will come from
Optical signal above camera lens converges to the via hole, and the optical signal is transmitted to the photodiode, institute via the via hole
Photodiode is stated for the optical signal to be converted to electric signal, and by the electric signal transmission to the thin film transistor (TFT).
2. optical image acquisition unit according to claim 1, which is characterized in that the via hole and the photodiode
Alignment setting.
3. optical image acquisition unit according to claim 1 or 2, which is characterized in that the focusing point of the micro lens
In in the via hole.
4. optical image acquisition unit according to any one of claim 1 to 3, which is characterized in that the hole of the via hole
Diameter is greater than or equal to 0.5um.
5. optical image acquisition unit according to any one of claim 1 to 4, which is characterized in that the via hole is circle
Cylindricality.
6. optical image acquisition unit according to any one of claim 1 to 5, which is characterized in that the light blocking layer pair
The transmitance of visible light or the light of 610nm above band is less than 25%.
7. optical image acquisition unit according to any one of claim 1 to 6, which is characterized in that the optical imagery
Acquisition unit further include:
Transparent dielectric layer, is used for transmission the optical signal, and the transparent dielectric layer includes first medium layer and/or second medium
Layer, the first medium layer are set between the micro lens and the light blocking layer, and the second dielectric layer is set to the gear
Between photosphere and the photoelectric sensor.
8. optical image acquisition unit according to claim 7, which is characterized in that the thickness of first transparent dielectric layer
More than or equal to 4um.
9. optical image acquisition unit according to any one of claim 1 to 8, which is characterized in that the optical imagery
Acquisition unit further include:
Passivation layer is set to the top of the light blocking layer.
10. optical image acquisition unit according to any one of claim 1 to 9, which is characterized in that the film crystal
Pipe includes:
Reset transistor RST, follow transistor SF and row selection gate transistor RS.
11. optical image acquisition unit according to any one of claim 1 to 10, which is characterized in that the micro lens
Material be organic material.
12. optical image acquisition unit according to any one of claim 1 to 11, which is characterized in that the film is brilliant
Metal layer in body pipe includes the connection circuit of the photoelectric sensor, and/or, the metal layer in the photodiode includes
The connection circuit of the photoelectric sensor.
13. a kind of optical image acquisition device characterized by comprising
Optical image acquisition cellular array according to any one of claim 1 to 12.
14. a kind of electronic equipment characterized by comprising
Display screen, and
Optical image acquisition device according to claim 13, wherein the optical image acquisition device is set to described
Below display screen.
15. electronic equipment according to claim 14, which is characterized in that
The display screen is organic light-emitting diode (OLED) display screen, and the luminescent layer of the display screen includes multiple Organic Light Emitting Diodes
Light source, wherein when the optical image acquisition device is biometric devices, the biometric devices are used
At least partly excitation light source of the organic light-emitting diode light source as living things feature recognition.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/107630 WO2020061823A1 (en) | 2018-09-26 | 2018-09-26 | Optical image acquisition unit, optical image acquisition apparatus and electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109417080A true CN109417080A (en) | 2019-03-01 |
Family
ID=65462578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880001635.XA Pending CN109417080A (en) | 2018-09-26 | 2018-09-26 | Optical image acquisition unit, optical image acquisition device and electronic equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109417080A (en) |
| WO (1) | WO2020061823A1 (en) |
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Application publication date: 20190301 |