CN1748285B - 用于均匀加热基片的腔室 - Google Patents

用于均匀加热基片的腔室 Download PDF

Info

Publication number
CN1748285B
CN1748285B CN200380109616.2A CN200380109616A CN1748285B CN 1748285 B CN1748285 B CN 1748285B CN 200380109616 A CN200380109616 A CN 200380109616A CN 1748285 B CN1748285 B CN 1748285B
Authority
CN
China
Prior art keywords
mentioned
substrate
heater
chamber
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200380109616.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN1748285A (zh
Inventor
稻川真
细川昭弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1748285A publication Critical patent/CN1748285A/zh
Application granted granted Critical
Publication of CN1748285B publication Critical patent/CN1748285B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Furnace Details (AREA)
CN200380109616.2A 2002-12-17 2003-12-15 用于均匀加热基片的腔室 Expired - Lifetime CN1748285B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43406402P 2002-12-17 2002-12-17
US60/434,064 2002-12-17
PCT/US2003/039783 WO2004061914A2 (en) 2002-12-17 2003-12-15 Chamber for uniform substrate heating

Publications (2)

Publication Number Publication Date
CN1748285A CN1748285A (zh) 2006-03-15
CN1748285B true CN1748285B (zh) 2010-04-28

Family

ID=32713006

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200380109616.2A Expired - Lifetime CN1748285B (zh) 2002-12-17 2003-12-15 用于均匀加热基片的腔室

Country Status (6)

Country Link
JP (1) JP2006515433A (ko)
KR (1) KR101035828B1 (ko)
CN (1) CN1748285B (ko)
AU (1) AU2003297065A1 (ko)
TW (1) TWI279828B (ko)
WO (1) WO2004061914A2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326877B2 (en) * 2004-12-01 2008-02-05 Ultratech, Inc. Laser thermal processing chuck with a thermal compensating heater module
KR100707788B1 (ko) * 2005-02-04 2007-04-13 주식회사 테라세미콘 박막 트랜지스터 액정표시장치 열처리방법 및 그 열처리장치
KR101073550B1 (ko) 2009-10-29 2011-10-14 삼성모바일디스플레이주식회사 기판 열처리 장치
CN102300342A (zh) * 2010-06-24 2011-12-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种载板加热装置及应用该装置的等离子体处理设备
US8517657B2 (en) * 2010-06-30 2013-08-27 WD Media, LLC Corner chamber with heater
CN102508381B (zh) * 2011-11-29 2015-02-11 深圳市华星光电技术有限公司 一种用于液晶面板的烘烤设备
CN104269368A (zh) * 2014-08-29 2015-01-07 沈阳拓荆科技有限公司 一种利用前端模块为晶圆加热的装置及方法
JP2019119903A (ja) * 2017-12-28 2019-07-22 キヤノントッキ株式会社 基板加熱装置及び成膜装置
US11319627B2 (en) * 2018-12-27 2022-05-03 Ulvac, Inc. Vacuum processing apparatus
CN112363335A (zh) * 2020-11-12 2021-02-12 深圳市华星光电半导体显示技术有限公司 一种液晶面板烘烤设备
CN114959659B (zh) * 2022-03-31 2023-11-28 松山湖材料实验室 用于样品加热的加热装置
TW202427650A (zh) * 2022-12-30 2024-07-01 南韓商周星工程股份有限公司 基板處理設備以及基板處理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5626680A (en) * 1995-03-03 1997-05-06 Silicon Valley Group, Inc. Thermal processing apparatus and process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474258B2 (ja) * 1994-04-12 2003-12-08 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US5850071A (en) * 1996-02-16 1998-12-15 Kokusai Electric Co., Ltd. Substrate heating equipment for use in a semiconductor fabricating apparatus
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5626680A (en) * 1995-03-03 1997-05-06 Silicon Valley Group, Inc. Thermal processing apparatus and process

Also Published As

Publication number Publication date
JP2006515433A (ja) 2006-05-25
TW200416798A (en) 2004-09-01
AU2003297065A8 (en) 2008-03-13
WO2004061914A3 (en) 2008-01-17
CN1748285A (zh) 2006-03-15
TWI279828B (en) 2007-04-21
KR20040054514A (ko) 2004-06-25
AU2003297065A1 (en) 2004-07-29
WO2004061914A2 (en) 2004-07-22
KR101035828B1 (ko) 2011-05-20

Similar Documents

Publication Publication Date Title
CN1293600C (zh) 用于均匀加热衬底的腔室
US6933009B2 (en) Thin-film deposition method
US5674786A (en) Method of heating and cooling large area glass substrates
JP3178824B2 (ja) 複合形単一ウエーハ用の高生産性形マルチステーシヨン方式処理装置
US7442900B2 (en) Chamber for uniform heating of large area substrates
JP5813920B2 (ja) 基板上に薄膜を蒸着する方法および基板のインライン真空処理のための装置
JP4237939B2 (ja) 基板加熱冷却を改良した真空処理装置
CN1748285B (zh) 用于均匀加热基片的腔室
JP3252960B2 (ja) 原子層エピタキシー工程のための半導体薄膜蒸着装置
CN1149304C (zh) 涂覆和退火大面积玻璃基底的方法
US6149365A (en) Support frame for substrates
CN102421934A (zh) 高产量多晶片外延反应器
KR102035833B1 (ko) 처리 모듈
US6998579B2 (en) Chamber for uniform substrate heating
CN106716649A (zh) 平行板式串联基板处理工具
US20180127875A1 (en) Apparatus for performing selenization and sulfurization process on glass substrate
JP4115331B2 (ja) 基板処理装置
KR101593493B1 (ko) 대면적 유리기판 열처리 장치
US20230245868A1 (en) Holding device, and use of the holding device
JP2001102374A (ja) 膜形成システム
CN116219401A (zh) 镀膜生产线
KR20190011610A (ko) 개선된 기판 열처리 챔버, 및 이를 구비한 기판 열처리 장치 및 시스템
WO2005069359A1 (ja) 基板処理装置および半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100428