CN1747225A - Zero-point micromachinery and microwave filter with dual-tuning transmission - Google Patents
Zero-point micromachinery and microwave filter with dual-tuning transmission Download PDFInfo
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- CN1747225A CN1747225A CN 200510094411 CN200510094411A CN1747225A CN 1747225 A CN1747225 A CN 1747225A CN 200510094411 CN200510094411 CN 200510094411 CN 200510094411 A CN200510094411 A CN 200510094411A CN 1747225 A CN1747225 A CN 1747225A
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- transmission line
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Abstract
The invention improves Techebyshev type microwave filter. Its basic structure adopts distributive coupling line structure. The length of (2)-(N-1) node micro wave transmission line in the middle is 1/4 wave length of designed frequency, and one end of the transmission line connects to ground via micro through-hole (V2-VN-1). The both end of two node in head and end(1),(N)micro wave transmission line connects to ground via micro through-hole (V1,V1'),(VN,VN'). The signal coupling adopts tapped line structure (T1, T2). The distance from (T1, T2) to(V1,V1'),(VN,VN')is L1,L2. By adjusting L1 and L2, implement two transmission zeros at appropriate frequency point and improve outband rejection property.
Description
Technical field
The invention belongs to microwave circuit, microelectronics and MEMS (micro electro mechanical system) crossing domain, in microwave circuit,, simultaneously the signal attenuation that does not need frequency range is fallen in order to the signal of required frequency range is passed through with as far as possible little decay.Especially a kind of filter of broad sense Chebyshev's band pass filter type, specifically a kind of zero-point micromachinery and microwave filter with dual-tuning transmission.
Background technology
Microwave filter designing requirement volume is little, Insertion Loss is little, band is outer suppresses to want height, impedance matching property to get well.The kind of microwave filter mainly contains lamped element (inductance, electric capacity) form, distribution transmission line formula, pottery, cavity type etc.In systems such as satellite, communication and Aeronautics and Astronautics, require the electronic system volume little, in light weight and cost is low, in the today of having adopted large scale integrated circuit, the integrated bottleneck that just becomes system of passive components such as microwave filter.Therefore be the miniaturization of pursuit system, the common implementation of microwave filter has interdigital line, pectinate line, hair clip line and little band of parallel coupled line type or strip line filter, method for designing adopts the chebyshev low-pass filter prototype, convert the physical size of microwave filter to, realize the function of filter.Above-mentioned interdigital line and comb line filter compact dimensions are the focuses of microwave filter miniaturization Design.But the microwave grounding technology is the difficult point that microwave integrated circuit technology is made, so limited its development, becomes one of bottleneck of microfilter development.
Summary of the invention
The purpose of this invention is to provide the zero-point micromachinery and microwave filter with dual-tuning transmission that a kind of overall structure is less, band outside inhibitory energy is good, Insertion Loss is little, have two tuning transmission zeros.
Technical scheme of the present invention is:
A kind of zero-point micromachinery and microwave filter with dual-tuning transmission is provided with N joint distributed couplings microwave transmission line on substrate S, centre tap line formula, tap line input T are adopted in the input and output of filter
1Link to each other with first segment microwave transmission line 1, first segment microwave transmission line 1 and intermediate conveyor line 2 as resonator ..., N-1 is coupled until final section microwave transmission line N, tap line output T
2N links to each other with the final section microwave transmission line, it is characterized in that: 1. first segment microwave transmission line 1 and final section microwave transmission line N two-terminal-grounding all, earth terminal is respectively V
1, V
1' and V
n, V
n'; 2. tap line T
1Earth terminal V to microwave transmission line 1
1And V
1' length be respectively L
1And L
2, tap line output (T
2) to last one the joint microwave transmission line (N) earth terminal V
n, V
n' length also be respectively L
1And L
2, L
1And L
2Equal 1/2nd wavelength of two transmission zero places of filter Frequency point respectively.
The present invention has also further taked following technical measures:
The earthing mode of every joint microwave transmission line or link to each other with the back side ground level of substrate S by the micromachined through hole and be grounded for each bar microwave transmission line, or be to link to each other with the common ground bus earlier, the common ground bus links to each other with substrate S back side ground level by the micromachined through hole and is grounded.
Described microwave transmission line can be microstrip line, co-planar waveguide line or belt shape line.
Described substrate is High Resistivity Si, GaAs, aluminium oxide ceramics or glass.
When the joint number N of microwave transmission line was odd number, its structure was a symmetrical expression, and when N was even number, its structure was the antisymmetry formula.
Input/output terminal tap line T
1, T
2Structure is microstrip line, co-planar waveguide line or belt shape line, and coupled modes are narrow line inductance coupling high or taper coupling.
As 2 of resonator ..., the coupling microwave transmission line is interdigitated or pectinate line structure single-end earthed in the middle of the N-1 joint, the length of resonator equals the quarter-wave of filter center frequency.
Beneficial effect of the present invention:
One, adopts double tunning transmission zero technology, improved performance of filter
Traditional coupled transfer line filter will be realized the outer joint number that suppresses to increase filter of higher band, yet the increase of joint number not only makes the volume of filter increase, and can make the insertion loss of filter become big thereupon.Adopt double tunning transmission zero technology, under the constant situation of filter joint number, transmission zero occurs, improved the band outside inhibitory energy of filter greatly at the Frequency point that it is suitable that the passband both sides are upper sideband and lower sideband.
Two, double tunning transmission zero technology is optimized and revised convenient and practical
Usually in the microwave transmission line filter, transmission zero adopts and makes in the filter that cross-linked method realizes between non-conterminous resonator.The shortcoming of this method is the resonator that filter must have at least four joints, and structure is relatively complicated, thereby causes Insertion Loss to become big easily.
The present invention only need adjust L
1, L
2Length and tap line position, so easy to adjust.
Three, adopt micromechanics through hole technology, reduce area of chip, improved the parasitic passband of microwave filter.
Because the restriction of technology, adopt the hair clip shape microstripline filter and the open circuit ring microstripline filter of tap input type also can avoid cross coupling structure to realize two transmission zeros, but structure is compact inadequately, relative volume is bigger, and parasitic passband is at 2 frequency multiplication places of Design of Filter centre frequency.
Use micromechanics through hole technology, avoid earthing mode to connect ground plane, and can increase the flexibility of design the realization Anywhere and the metal layer on back ground connection of chip by the metal level of chip periphery.And parasitic passband has improved the use frequency range of filter at 3 frequency multiplication places of Design of Filter centre frequency.
Four, the present invention has used design of tap line formula and microwave through hole grounding technology for making the chip miniaturization; Used the corresponding and limited transmission zero technology of double tunning of broad sense Chebyshev for improving selectivity; For making physical realizability, selected the body silicon processing technique in microwave integrated circuit technology and the radio-frequency micro electromechanical system.Thereby having simple in structurely, easy to adjust, processing compatibility is good, can be directly used in processing volume little, lightweight radio frequency multicore sheet circuit module or monolithic subsystem.
Five, compare with traditional coupling microstrip line filter that to have a volume little, advantage such as the band outside inhibitory can be good, Insertion Loss is little.And compare with the microstripline filter that generally has transmission zero, have simple in structure, compact, be easy to realize, advantage such as transmission zero is adjustable arbitrarily.
Description of drawings
Fig. 1 is the structural representation of symmetrical expression small mechanical filter of the present invention.
Fig. 2 is the decline structural representation of mechanical filter of the antisymmetry of invention.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
As shown in Figure 1, 2.Among Fig. 1,2: the 1st, the first segment microwave transmission line; 2～N-1 is middle microwave coupled transmission line resonator; N is the final section microwave transmission line; T
1It is the tap line input; T
2It is the tap line output; L is an intermediate conveyor line resonator length; L
1, L
2Be the tap line junction apart from transmission line two earth terminals apart from length; M is transmission line coupling turning.S is a substrate.
Tap line input (T
1) link to each other with first segment microwave transmission line 1, first segment microwave transmission line 1 and middle coupled transmission line resonator 2 ..., N-1 is coupled until final section microwave transmission line N, tap line output T
2N links to each other with the final section microwave transmission line.First segment microwave transmission line 1 and final section microwave transmission line N be two-terminal-grounding, and earth terminal is respectively V
1, V
1' and V
n, V
n'.
Tap line T
1Earth terminal V to microwave transmission line 1
1And V
1' length be respectively L
1And L
2, L
1And L
2Equal 1/2nd wavelength of two transmission zero places of filter Frequency point respectively.Tap line output T
2Earth terminal V to a last joint microwave transmission line (N)
n, V
n' length be respectively L
1And L
2, L
1And L
2Equal 1/2nd wavelength of two transmission zero places of filter Frequency point respectively.See formula 1.By changing L
1, L
2, optimize and revise the frequency position of transmission zero.The band of filter suppressed outward, insert loss, the input and output impedance matching reaches best.
Transmission zero location and L
1And L
2Relational expression as follows:
Wherein, c is the light velocity in the vacuum, ε
ReBe the effective relative dielectric constant of substrate dielectric.
Middle coupling microwave transmission line resonator 2 ..., N-1 adopts mode single-end earthed, and earth terminal is V
2～V
n, V
2'～V
n'.The transmission line coupled structure can be interdigitated or the pectinate line structure, and the transmission line form can be microstrip line, co-planar waveguide line or belt shape line.Length of transmission line equals the quarter-wave of filter center frequency.See formula (2).Be optimized as the case may be, adjust slightly.
Microwave transmission line earth terminal V
1～V
n, V
1'～V
n' linking to each other with the substrate back ground level by the micromechanics through hole that is formed by MEMS technology is grounded.Concrete mode can be that each bar microwave transmission line links to each other with the substrate back ground level by the micromachined through hole and is grounded, also can be by linking to each other with the common ground bus earlier, the common ground bus links to each other with the substrate back ground level by the micromachined through hole and is grounded.
The filter general structure can adopt symmetrical expression (see figure 1) and antisymmetry formula (see figure 2), and respective filter joint number (N value) is odd number joint and even number joint respectively.
Input/output terminal tap line T
1, T
2Structure can adopt microstrip line, co-planar waveguide line or belt shape line, and coupled modes can adopt narrow line inductance coupling high or taper coupling.
Filter substrate S can adopt High Resistivity Si, GaAs, aluminium oxide ceramics or glass.
The concrete example of making:
In resistivity is the Φ 4 of 3000 Ω cm, and " the silicon chip S surface that 525 μ m are thick forms the thick SiO of 1 μ m with microelectronic technique
2Insulating medium layer uses microelectronic technique at SiO again
2Form the thick metal aluminium lamination of about 1 μ m on the layer.Form via hole image with microelectronic technique, figure is removed aluminium and SiO
2, about 450 μ m are dark for ICP (inductively coupled plasma) deep reactive ion etch silicon in via hole image.Remove aluminium lamination and cleaning silicon chip, use microelectronic technique again at SiO
2Form on the insulating medium layer by the head and the tail two joint transmission lines 1 that titanium/the gold layer constitutes, N, middle coupled transmission line resonator 2～N-1, input tap line T
1Output tap line T
2Head and the tail two joint length of transmission line are 5000 μ m, and width is 250 μ m, wherein L
1Be 3600 μ m, L
2Be 1400 μ m, middle coupled transmission line length L is 2500 μ m, and width is 500 μ m.Tap line length is 500 μ m, and the two ends width is respectively 300 μ m and 100 μ m.Coupling gap does not wait between each transmission line, in 100 μ m～500 mu m ranges.Silicon chip thinning back side to 380 μ m forms micromechanics through hole V
1～V
n, V
1', V
n', form titanium/gold layer at the silicon chip back side with microelectronic technique, and make via metalization, through hole V
1～V
n, V
1', V
n' internal diameter 200 μ m, external diameter 300 μ m.Scribing obtains the filter chip that overall dimension is 10mm * 5mm * 0.4mm.
Claims (7)
1, a kind of zero-point micromachinery and microwave filter with dual-tuning transmission is provided with N joint distributed couplings microwave transmission line on substrate S, centre tap line formula, tap line input (T are adopted in the input and output of filter
1) link to each other with first segment microwave transmission line (1), first segment microwave transmission line (1) with as the intermediate conveyor line of resonator (2 ..., N-1) coupling is until final section microwave transmission line (N), tap line output (T
2) link to each other with final section microwave transmission line (N), it is characterized in that: 1. first segment microwave transmission line (1) and final section microwave transmission line (N) two-terminal-grounding all, earth terminal is respectively V
1, V
1' and V
n, V
n'; 2. tap line T
1Earth terminal V to microwave transmission line (1)
1And V
1' length be respectively L
1And L
2, tap line output (T
2) to last one the joint microwave transmission line (N) earth terminal V
n, V
n' length also be respectively L
1And L
2, L
1And L
2Equal 1/2nd wavelength of two transmission zero places of filter Frequency point respectively.
2, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1, it is characterized in that the earthing mode of every joint microwave transmission line or link to each other with the back side ground level of substrate S by the micromachined through hole and be grounded for each bar microwave transmission line, or be to link to each other with the common ground bus earlier, the common ground bus links to each other with substrate S back side ground level by the micromachined through hole and is grounded.
3, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1 is characterized in that described microwave transmission line can be microstrip line, co-planar waveguide line or belt shape line.
4, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1 is characterized in that described substrate is High Resistivity Si, GaAs, aluminium oxide ceramics or glass.
5, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1, when the joint number N that it is characterized in that microwave transmission line was odd number, its structure was a symmetrical expression, when N was even number, its structure was the antisymmetry formula.
6, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1 is characterized in that input/output terminal tap line (T
1, T
2) structure is microstrip line, co-planar waveguide line or belt shape line, coupled modes are narrow line inductance coupling high or taper coupling.
7, zero-point micromachinery and microwave filter with dual-tuning transmission according to claim 1, it is characterized in that as (2 of resonator, ..., N-1) the coupling microwave transmission line is interdigitated or pectinate line structure single-end earthed in the middle of the joint, and the length of resonator equals the quarter-wave of filter center frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100944112A CN100499255C (en) | 2005-09-16 | 2005-09-16 | Zero-point micromachinery and microwave filter with dual-tuning transmission |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100944112A CN100499255C (en) | 2005-09-16 | 2005-09-16 | Zero-point micromachinery and microwave filter with dual-tuning transmission |
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| Publication Number | Publication Date |
|---|---|
| CN1747225A true CN1747225A (en) | 2006-03-15 |
| CN100499255C CN100499255C (en) | 2009-06-10 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490743A (en) * | 2013-09-22 | 2014-01-01 | 中国电子科技集团公司第十三研究所 | Film BAW resonator and BAW filter |
| CN104009271A (en) * | 2014-05-12 | 2014-08-27 | 华南理工大学 | Plane band-pass filter on the basis of four cascaded resonators |
| CN102265456B (en) * | 2008-12-25 | 2014-12-24 | 日本电气株式会社 | Filter based on a combined via structure |
-
2005
- 2005-09-16 CN CNB2005100944112A patent/CN100499255C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102265456B (en) * | 2008-12-25 | 2014-12-24 | 日本电气株式会社 | Filter based on a combined via structure |
| US8970327B2 (en) | 2008-12-25 | 2015-03-03 | Nec Corporation | Filter based on a combined via structure |
| CN103490743A (en) * | 2013-09-22 | 2014-01-01 | 中国电子科技集团公司第十三研究所 | Film BAW resonator and BAW filter |
| CN103490743B (en) * | 2013-09-22 | 2017-01-11 | 中国电子科技集团公司第十三研究所 | Film BAW resonator and BAW filter |
| CN104009271A (en) * | 2014-05-12 | 2014-08-27 | 华南理工大学 | Plane band-pass filter on the basis of four cascaded resonators |
| CN104009271B (en) * | 2014-05-12 | 2016-04-13 | 华南理工大学 | A kind of plane bandpass filter based on cascade four resonators |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100499255C (en) | 2009-06-10 |
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