CN100435409C - Super wide band microstrip filter - Google Patents
Super wide band microstrip filter Download PDFInfo
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- CN100435409C CN100435409C CNB2006101170452A CN200610117045A CN100435409C CN 100435409 C CN100435409 C CN 100435409C CN B2006101170452 A CNB2006101170452 A CN B2006101170452A CN 200610117045 A CN200610117045 A CN 200610117045A CN 100435409 C CN100435409 C CN 100435409C
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Abstract
This invention relates to a super-wideband microband filter including: a positive part, a negative part and an input/output port, in which, the positive part includes: an interdigital capacitance unit, a short transversal unit, a through hole unit, a uniform transmission line unit, a compensated transmission line unit and a medium plate, the interdigital capacitance unit includes three, the short transversal unit includes two and one short transversal unit is connected between every two interdigital units, the input and output port has two, each one is connected with one uniform transmission line, the inverse part includes: a non-uniform DGS unit, a slot structure unit and an earth unit, the non-uniform DGS unit includes 7, the outer diameters of the units are arrayed un-uniformly in a near arithmetic sequence and the slot structure unit includes five groups.
Description
Technical field
What the present invention relates to is a kind of filter of communication technical field, specifically is a kind of super wide band microstrip filter.
Background technology
Along with the development of indoor high-speed wireless data access technology, require following wireless communication system to have bigger data throughout than existing system.Therefore, as a kind of effective short-distance wireless access technology, ultra broadband (UWB) technology obtains paying attention to day by day.Propose to distribute the needs of 3.1～10.6GHz frequency range to the ultra-wideband communications use at IEEE 802.15.3a standard, ultra-wide band filter becomes one of research focus as one of passive device crucial in the wireless communication system.Require to be operated in the frequency band of the so non-constant width of 3.1～10.6GHz for ultra-wide band filter, require this filter must have smaller size simultaneously, so that can be integrated with other circuit, and the method for designing of traditional uniform transmission line Coupled Miccrostrip Lines can't be designed so wide band filter.
Find through literature search prior art, in December, 2005, people such as Lei Zhu was at IEEEMicrowave and Wireless Components Letters (microwave and wireless devices wall bulletin), 15 volumes were delivered " Ultra-wideband bandpass filter with hybrid microstrip/CPWstructure (ultra wide band bandpass filter of hybrid microstrip and coplanar waveguide structure) " the 12nd phases, had proposed to utilize the coupling of traditional microstrip structure and coplanar waveguide structure to realize the design of ultra-wide band filter in this article.Filter in the document can only reach frequency about 13GHz to the filtering of high-frequency signal.Also find in the retrieval, in August, 2006, people such as Sheng Sun was at IEEE Microwave and Wireless Components Letters, (microwave and wireless devices wall bulletin) delivered " Capacitive-endedinterdigital coupled lines for UWB bandpass filters with improvedout-of-band performances (the slotting coupled transmission line that refers to of termination capacitive is realized the ultra wide band bandpass filter to the high-band external characteristic) " on the 16th the 8th phase of volume, the slotting finger coupled transmission line that has proposed different geometries in this article designs ultra-wide band filter, but the filter in the document can only reach frequency about 16GHz to the filtering of high-frequency signal, also has some problems in actual use.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and defective, and a kind of super wide band microstrip filter is provided, and makes it can solve that existing microstrip filter frequency band is narrow, size is big, the narrow deficiency of the outer rejection band of band.The present invention covers the such frequency band than broad of 3.0-10.8GHz, and the filter in the document can reach the frequency of 20GHz to the filtering of high-frequency signal, and its structure mainly is that the cascade by low pass filter and high pass filter constitutes.
The present invention is achieved by the following technical solutions, the present invention includes: front portion, reverse side part and input output port.
Described front portion comprises: interdigital capacitor unit, stub unit, through-hole unit, uniform transmission line unit, compensation transmission line unit and dielectric-slab.The interdigital capacitor unit has three, and wherein the left end of first interdigital capacitor unit links to each other with uniform transmission line.The stub unit has two, and the first stub unit and the second stub unit are connected to the centre of the first interdigital capacitor unit and the second interdigital capacitor unit and the second interdigital capacitor unit and the 3rd interdigital capacitor cell; Through-hole unit has two, and two through-hole unit connect two stub unit and ground unit respectively; The compensation transmission line is positioned at the mid portion of dielectric-slab, is connected with uniform transmission line with the right-hand member of the 3rd interdigital electric capacity respectively.
Described input output port have two, each port links to each other with uniform transmission line.
Described reverse side partly comprises: non-homogeneous DGS (defective ground) unit, slot (slit) construction unit and ground unit.Unit, non-homogeneous defective ground has 7, and the overall dimension of each unit is with the non-homogeneous arrangement of arithmetic progression.The gap structure unit has five groups, wherein two single gap structure unit are carried in the back side of two interdigital capacitors respectively, other three groups of both sides that are carried in unit, even number defective ground, above-mentioned seven non-homogeneous defective unit, ground and five groups of gap structure unit all are that etching is removed the corresponding structure shape on ground unit, thereby form corresponding air element.
Described interdigital capacitor is positioned at the dielectric-slab front, the ratio of the finger of three interdigital capacitor unit is 3: 2, spacing between finger is 0.1mm, wherein the finger length of the first and the 3rd interdigital unit is isometric, the finger of the second interdigital unit is long slightly short, the transmission line that connects the first interdigital capacitor left end is 50 Ω uniform transmission lines, is connected by the stub unit between per two interdigital capacitor unit, and in the 3rd interdigital electric capacity right-hand member connection is compensation transmission line unit.
Described stub unit is positioned at the dielectric-slab front, and two stub unit lay respectively between three interdigital capacitor unit.
Unit, described seven defectives ground, the part of the head at its two ends, dumbbell shape defective ground is positioned at the below of compensation transmission line.Dumbbell shape defective ground cell array structure is the non-homogeneous arrangement that is arithmetic progression.
Described gap structure unit is positioned at the filter back side, and wherein two groups of single gap structure unit lay respectively at the below of the first and the 3rd interdigital electric capacity.Three groups of non-homogeneous arrangements in gap structure unit in addition, each is to all being connected together by unit, another gap structure unit and defective ground between the isometric gap structure unit, and is carried in the both sides of unit, second, four, six defectives ground respectively.
Described three interdigital capacitor unit, two stub unit, two uniform transmission line unit, compensating wire unit, two through-hole unit and ground unit are conductor, non-homogeneous defective ground array structure is to be etched away corresponding shape on ground unit, thereby forms the air element structure.
Described dielectric-slab is the low-k material.
The present invention is by realizing low pass filter by the unit, defective ground at the back side, high pass filter is realized in interdigital capacitor unit and stub unit by the front, theoretically as long as regulate the band pass filter that the cut-off frequency of the cut-off frequency of low pass filter and high pass filter can be realized any bandwidth within the specific limits respectively, this circuit has the characteristics of compact conformation, helps integrated with other radio frequency (RF) circuit.
Of the present invention is higher order high pass filters, particularly based on the high pass filter after a kind of conversion of Chebyshev's low-pass prototype of five rank, can see in low frequency part very narrow to the transition band of passband from frequency characteristic after adopting this structure by cut-off frequency, reduced the squareness factor of this ultra-wide band filter, squareness factor of the present invention is: 1.2: 1.Filter loss of the present invention in passband greater than-1.5dB, return loss in passband less than-14dB, and the rate of change of the group delay in passband 3.0GHz-10.8GHz scope is to be one of minimum group delay in the domestic and international at present existing list of references less than 0.15 nanosecond.
Description of drawings
Fig. 1 is the overall structural representation of ultra-wide band filter of the present invention
Fig. 2 is the Facad structure schematic diagram of ultra-wide band filter of the present invention
Fig. 3 is the structure schematic diagram of ultra-wide band filter of the present invention
Fig. 4 is the frequency characteristic schematic diagram of ultra-wide band filter emulation of the present invention
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, present embodiment comprises: front portion, reverse side part and input output port.
As shown in Figure 2, the described front portion of present embodiment comprises: the first uniform transmission line unit 2, the second uniform transmission line unit 13, the first interdigital capacitor unit 3, the second interdigital capacitor unit the 6, the 3rd interdigital capacitor cell 9, the first stub unit 4, the second stub unit 8, first through-hole unit 5, second through-hole unit 7, compensation transmission line 10, dielectric-slab 11.The input output port have two, first input output port 1 and the first uniform transmission line unit 2 join, the second input output port 12 and the second uniform transmission line unit 13 join, and the 3rd interdigital capacitor cell 9 is connected by compensation transmission line unit 10 with the second uniform transmission line unit 13.
As shown in Figure 3, the described reverse side of present embodiment partly comprises: unit 16, first defective ground, unit 18, second defective ground, unit 20, the 3rd defective ground, unit 22, the 4th defective ground, unit 23, the 5th defective ground, unit 24, the 6th defective ground, unit 25, the 7th defective ground, the first gap structure unit 14, the second gap structure unit 15, the 3rd gap structure unit 17, Fpir Crevices gap structure unit 19, the 5th gap structure unit 21 and ground unit 26.
Described gap structure unit is positioned at the filter back side, has five groups, and wherein the first gap structure unit 14, the second gap structure unit 15 lay respectively at the below of the first interdigital capacitor unit 3 and the 3rd interdigital capacitor cell 9.The 3rd gap structure unit 17, Fpir Crevices gap structure unit 19, the 5th gap structure unit 21 are non-homogeneous arrangement, and each is to all being connected together by another gap structure unit and unit, defective ground between the isometric gap structure.Wherein the 3rd gap structure unit 17 is loaded in the left and right sides of unit 18, second defective ground, Fpir Crevices gap structure unit 19 is loaded in the left and right sides of unit 22, the 4th defective ground, and the 5th gap structure unit 21 is loaded in the left and right sides of unit 24, the 6th defective ground.First defective unit 16, ground and unit 25, the 7th defective ground lay respectively at the two ends of compensation 10 belows, transmission line unit, and are symmetrically distributed.Unit 20, the 3rd defective ground is between second defective unit 18, ground and unit 22, the 4th defective ground, and unit 23, the 5th defective ground is between the 4th defective unit 22, ground and unit 24, the 6th defective ground.
The ratio that the described first interdigital capacitor unit 3, the second interdigital capacitor unit 6 and the 3rd interdigital capacitor cell 9 refer to is 3: 2, and the spacing between referring to is 0.1mm, and the first uniform transmission line unit 2 that connects the first interdigital capacitor unit, 3 left ends is 50 Ω uniform transmission lines.
3,6,9, two stub unit 4,8, described three interdigital capacitor unit, uniform transmission line unit 2,13, compensating wire unit 10, through- hole unit 5,7 and ground unit 26 are conductor.
16,18,20,22,23,24,25 and five groups of gap structure unit 14,15,17,19,21, unit, described seven defectives ground all are the shapes that etching is removed corresponding dumbbell-shaped structure and gap structure on ground unit 26, form air element.
Described dielectric-slab 11 is the low-k material.
The described input of present embodiment output port 1 outer signal source, the pumping signal that adds is passed through by the first uniform transmission line unit 2, the first interdigital capacitor unit 3, the first gap structure unit 14, the first stub unit 4, first through-hole unit 5, the second interdigital capacitor unit 6, the second stub unit 8, second through-hole unit 7, the high pass filter rejection frequency that the 3rd interdigital capacitor cell 9 and the second gap structure unit 15 are formed is lower than the signal of 3.0GHz, by by compensating wire unit 10, unit 16, seven defective ground, 18,20,22,23,24,25 and five groups of gap structure unit 14,15,17,19, the low pass filter filters out frequency that the 21 and second uniform transmission line unit 13 is formed is higher than the signal of 10.8GHz, at last via input output port 12 arrive external circuits, thereby realize ultra-broadband signal is carried out filtering.
As shown in Figure 4, the frequency characteristic of present embodiment comprises: S21 (loss) parameter, S11 (return loss) parameter and group delay (group delay) parameter.Wherein abscissa is represented frequency variable, and unit is GHz; Ordinate is represented the amplitude variable, and unit is dB.The passband of ultra-wide band filter of the present invention is 3.0GHz-10.8GHz, the S21 parameter in passband greater than-1.5dB, the S11 parameter in passband less than-14dB.
Claims (8)
1, a kind of super wide band microstrip filter, comprise: front portion, reverse side part and input output port, it is characterized in that: described front portion comprises: the first uniform transmission line unit (2), the second uniform transmission line unit (13), the first interdigital capacitor unit (3), the second interdigital capacitor unit (6), the 3rd interdigital capacitor cell (9), the first stub unit (4), the second stub unit (8), first through-hole unit (5), second through-hole unit (7), compensation transmission line (10), dielectric-slab (11); The input output port have two, first input output port (1) and the first uniform transmission line unit (2) join, second input output port (12) and the second uniform transmission line unit (13) join, the left end of the first interdigital capacitor unit (3) links to each other with the first uniform transmission line unit (2), the first stub unit (4) is connected the centre of the first interdigital capacitor unit (3) and the second interdigital capacitor unit (6), and the second stub unit (8) is connected the centre of the second interdigital capacitor unit (6) and the 3rd interdigital capacitor cell (9); Two through-hole unit (5,7) connect two stub unit (4,8) and ground unit (26) respectively; The 3rd interdigital capacitor cell (9) is connected by compensation transmission line (10) with the second uniform transmission line unit (13);
Described reverse side partly comprises: unit (16, seven defective ground, 18,20,22,23,24,25) and five groups of gap structure unit (14,15,17,19,21), the first gap structure unit (14) wherein, the second gap structure unit (15) is positioned at the below of the first interdigital capacitor unit (3) and the 3rd interdigital capacitor cell (9), the 3rd gap structure unit (17) is loaded in the left and right sides of second defective unit, ground (18), Fpir Crevices gap structure unit (19) is loaded in the left and right sides of unit 22, the 4th defective ground, the 5th gap structure unit (21) is loaded in the left and right sides of the 6th defective unit, ground (24), first defective unit (16), ground and the 7th defective unit, ground (25) lay respectively at the two ends of below, compensating wire unit (10), and be symmetrically distributed, the 3rd defective unit, ground (20) is positioned between second defective unit (18), ground and the 4th defective unit, ground (22), and the 5th defective unit, ground (23) is positioned between the 4th defective unit (22), ground and the 6th defective unit, ground (24).
2, super wide band microstrip filter as claimed in claim 1, it is characterized in that, described seven defectives unit (16,18,20,22,23,24,25), ground and five groups of gap structure unit (14,15,17,19,21) all are to go up the shape that etching is removed corresponding dumbbell-shaped structure and gap structure at ground unit (26), form air element.
3, super wide band microstrip filter as claimed in claim 1, it is characterized in that, unit (16,18,20,22,23,24,25), described seven defectives ground, the part of the head at its two ends, dumbbell shape defective ground is in the below of compensation transmission line unit (10), and dumbbell shape defective ground array structure is the non-homogeneous arrangement that is arithmetic progression.
As claim 1 or 2 described super wide band microstrip filters, it is characterized in that 4, the described first and second gap structure unit (14,15) are even gap structures, the non-homogeneous arrangement in other three groups of gap structure unit (17,19,21).
5, super wide band microstrip filter as claimed in claim 1, it is characterized in that, the ratio that the described first interdigital capacitor unit (3), the second interdigital capacitor unit (6) and the 3rd interdigital capacitor cell (9) refer to is 3:2, spacing between finger is 0.1mm, and the first uniform transmission line unit (2) that connects first interdigital capacitor unit (3) left end is 50 Ω uniform transmission lines.
6, super wide band microstrip filter as claimed in claim 1, it is characterized in that, described three interdigital capacitor unit (3,6,9), two stub unit (4,8), two uniform transmission line unit (2,13), compensating wire unit (10), two through-hole unit (5,7) and ground unit (26) are conductor.
7, super wide band microstrip filter as claimed in claim 1, it is characterized in that, described input output port (1) outer signal source, the pumping signal that adds is passed through by the first uniform transmission line unit (2), the first interdigital capacitor unit (3), the first gap structure unit (14), the first stub unit (4), first through-hole unit (5), the second interdigital capacitor unit (6), the second stub unit (8), second through-hole unit (7), the high pass filter rejection frequency that the 3rd interdigital capacitor cell (9) and the second gap structure unit (15) are formed is lower than the signal of 3.0GHz, by by compensating wire unit (10), unit (16, seven defective ground, 18,20,22,23,24,25) and five groups of gap structure unit (14,15,17,19,21) and the low pass filter filters out frequency formed of the second uniform transmission line unit (13) be higher than the signal of 10.8GHz, at last via input output port (12) arrive external circuit, thereby realize ultra-broadband signal is carried out filtering.
8, super wide band microstrip filter as claimed in claim 1 is characterized in that, described dielectric-slab (11) is the low-k material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101170452A CN100435409C (en) | 2006-10-12 | 2006-10-12 | Super wide band microstrip filter |
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| CNB2006101170452A CN100435409C (en) | 2006-10-12 | 2006-10-12 | Super wide band microstrip filter |
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| CN1933234A CN1933234A (en) | 2007-03-21 |
| CN100435409C true CN100435409C (en) | 2008-11-19 |
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| CNB2006101170452A Expired - Fee Related CN100435409C (en) | 2006-10-12 | 2006-10-12 | Super wide band microstrip filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931459A (en) * | 2012-10-23 | 2013-02-13 | 西北工业大学 | Novel toe-crossing structure-based ultra wide band bandpass filter |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692512B (en) * | 2009-09-28 | 2012-08-01 | 长安大学 | Ultra wide band bandpass filter based on ground defective grounding structure |
| CN101740842B (en) * | 2009-10-30 | 2012-10-31 | 华南理工大学 | Ultra-wideband filter employing parallel resonator and having band-stop characteristic |
| CN106450614B (en) * | 2016-12-21 | 2019-03-29 | 中国航空工业集团公司雷华电子技术研究所 | A kind of ultra-wide stopband Mini Microstrip resonant element low-pass filter |
| CN107359393B (en) * | 2017-08-21 | 2020-10-02 | 广西师范大学 | Ultra-wideband microstrip band-pass filter |
| CN110190367B (en) * | 2019-05-23 | 2020-11-20 | 复旦大学 | Ultra-wideband differential line common mode noise filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1170817A1 (en) * | 2000-07-04 | 2002-01-09 | Dal Ahn | Transmission line resonator with dielectric substrate having an etched structure on the ground plane |
| CN1901274A (en) * | 2006-07-27 | 2007-01-24 | 上海交通大学 | Super wide band plane microstrip filter |
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2006
- 2006-10-12 CN CNB2006101170452A patent/CN100435409C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1170817A1 (en) * | 2000-07-04 | 2002-01-09 | Dal Ahn | Transmission line resonator with dielectric substrate having an etched structure on the ground plane |
| CN1901274A (en) * | 2006-07-27 | 2007-01-24 | 上海交通大学 | Super wide band plane microstrip filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931459A (en) * | 2012-10-23 | 2013-02-13 | 西北工业大学 | Novel toe-crossing structure-based ultra wide band bandpass filter |
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