CN1747186A - LED structure with gallium nitride system - Google Patents

LED structure with gallium nitride system Download PDF

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Publication number
CN1747186A
CN1747186A CNA2004100739289A CN200410073928A CN1747186A CN 1747186 A CN1747186 A CN 1747186A CN A2004100739289 A CNA2004100739289 A CN A2004100739289A CN 200410073928 A CN200410073928 A CN 200410073928A CN 1747186 A CN1747186 A CN 1747186A
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gallium nitride
coating
layer
type
dusts
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CN100336235C (en
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武良文
涂如钦
游正璋
温子稷
简奉任
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Bright circle Au Optronics Co
LUMENS Limited by Share Ltd
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Formosa Epitaxy Inc
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Abstract

The invention reveals a technique of making GaN light-emitting diode by using material. When the ALxInj-xN is taken as cladding layer, its lattice constant can match the GaN material so that poor epitaxy caused by too much stress can be avoided. As energy gap of ALxInj-xN is bigger than GaN, so it can prevent electron overflow. Finally, because growth temperature of the ALxInj-xN cladding layer is low, so it can prevent its active light-emitting layer and increase luminous efficiency.

Description

LED structure with gallium nitride system
Technical field
The present invention relates to a kind of LED structure with gallium nitride system, particularly by the aluminum indium nitride (Al of p type coating xIn 1-xN) material is reached lattice constant and gallium nitride (GaN) the material purpose that is complementary, to avoid brilliant bad characteristic of heap of stone.
Background technology
InGaN of the prior art (InGaN)/gallium nitride (GaN) multiple quantum trap luminous diode (MQW LEDs) structure; be to be coating (cladding layer), coat the also active luminescent layer of protection InGaN (InGaN) with p type aluminium gallium nitride alloy (AlGaN).Yet, observation in the practical operation is found, there are many shortcomings in it, now enumerate the most serious two kinds as follows: at first, because its lattice constant and InGaN/gallium nitride multiple quantum trap structure gap are very big, be very easy to because piezoelectric field effect (piezo-electrical field effect) causes mechanical stress excessive, and then the characteristics of luminescence of influence crystalline substance of heap of stone itself, even destroy of heap of stone brilliant own.Secondly, coating aluminium gallium nitride alloy (AlGaN) must just can obtain preferable of heap of stone brilliant characteristic in growth more than 1000 ℃, and active luminescent layer InGaN (InGaN)/gallium nitride (GaN) multiple quantum trap growth temperature Celsius approximately 700 is spent to 850 degree, therefore, when active luminescent layer when temperature is elevated to more than 1000 ℃ after a while, the multiple quantum trap structure that itself low temperature is grown up easily goes to pot, thereby influences the luminous efficiency of this light-emitting diode (MQWLEDs) structure.
Summary of the invention
Because the problems referred to above, the present invention discloses the technology of utilizing lattice constant to be complementary, makes LED structure with gallium nitride system, and the shortcoming compared to prior art is made LED structure with gallium nitride system obtains multiple improvement.
Fig. 1 shows that III group-III nitride (III-nitride) material is applied in the lattice match line on the light-emitting diode.Because its III group-III nitride has the characteristic (Eg of wide energy gap (AlN)=6.3eV; Eg (GaN)=3.4eV; Eg (InN)=0.7eV), the wavelength covering scope from the ultraviolet light to ruddiness, the lattice constant a of gallium nitride (GaN) 0Be 3.18 dusts (A), can illustrate technological thought of the present invention by Fig. 1.
The objective of the invention is to, adopt aluminum indium nitride (Al xIn 1-xN) during material, can reach its lattice constant and gallium nitride (GaN) the material purpose that is complementary, when avoiding because of building crystal to grow, the stress of generation is excessive and then cause brilliant bad characteristic of heap of stone.Moreover Fig. 1 also clearlys show another object of the present invention, because aluminum indium nitride (Al xIn 1-xN) energy gap of material is big than gallium nitride (GaN) material, if can prevent electronics overflow (overflow) as p type coating, thereby it is electronic to the probability in the luminescent layer combination to increase electronics, the tool good electrical, and with aluminum indium nitride (Al xIn 1-xDuring N) as p type coating,,, finally can promote luminous efficiency so can effectively make limitation (confinement) to photon because of it has wide energy gap characteristic.The 3rd purpose of the present invention is aluminum indium nitride (Al xIn 1-xN) coating growth temperature is lower than the growth temperature of known technology p type aluminium gallium nitride alloy (AlGaN) coating, thus can protect the active luminescent layer of InGaN (InGaN), thus the luminous efficiency of lifting subassembly.
In order to be illustrated more clearly in objects and advantages of the present invention, below will and cooperate graphic being described in detail by specific embodiment.
Description of drawings
Fig. 1 shows that III group-III nitride (III-nitride) material is applied in the lattice match line on the light-emitting diode.
Fig. 2 is first embodiment of the LED structure with gallium nitride system according to the present invention.
Fig. 3 is second embodiment of the LED structure with gallium nitride system according to the present invention.
Fig. 4 is the 3rd embodiment of the LED structure with gallium nitride system according to the present invention.
Fig. 5 is the 4th embodiment of the LED structure with gallium nitride system according to the present invention.
Among the figure
11 substrates, 12 resilient coatings
13 n type gallium nitride layers, 14 active luminescent layers
15 p type coatings, 16 contact layers
17 electrode layers, 21 substrates
22 resilient coatings, 23 n type gallium nitride layers
24 active luminescent layer 25 p type coatings
26 contact layers, 27 electrode layers
31 substrates, 32 resilient coatings
33 n type gallium nitride layers, 34 active luminescent layers
35 dual coating 36 contact layers
37 electrode layers, 351 first coatings
352 second coatings, 41 substrates
42 resilient coatings, 43 n type gallium nitride layers
44 active luminescent layer 45 dual coatings
46 contact layers, 47 electrode layers
451 first coatings, 452 second coatings
Embodiment
Fig. 2 is first embodiment of the LED structure with gallium nitride system according to the present invention.
First embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 11, resilient coating (buffer layer) 12, n type gallium nitride (GaN) layer 13, active luminescent layer 14, p type coating 15, and contact layer 16.
Substrate 11, its material are alumina single crystal (Sapphire).Be positioned at the resilient coating (buffer layer) 12 on the substrate 11, its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride (GaN) layer 13 is positioned on the resilient coating 12.Be positioned at the active luminescent layer 14 on n type gallium nitride (GaN) layer 13, its material is InGaN (InGaN).Be positioned at the p type coating 15 on the active luminescent layer 14, its material is magnesium doping (Mg-doped) aluminum indium nitride (Al 1-xIn xN), 0≤X＜1 wherein.The thickness of p type coating 15 between 50 dusts to 3000 dusts.The growth temperature of p type coating 15 is spent to 1200 degree between Celsius 600.
Be positioned at the contact layer 16 on the p type coating 15, its material is magnesium doping (Mg-doped) p type gallium nitride (GaN).
First embodiment of LED structure with gallium nitride system of the present invention can comprise an electrode layer 17 further, is positioned on contact layer 16 or n type gallium nitride (GaN) layer 13.
Fig. 3 is second embodiment of the LED structure with gallium nitride system according to the present invention.
Second embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 21, resilient coating (buffer layer) 22, n type gallium nitride (GaN) layer 23, active luminescent layer 24, p type coating (cladding layer) 25 and contact layer 26.
Substrate 21, its material are alumina single crystal (Sapphire).Be positioned at the resilient coating (buffer layer) 22 on the substrate 21, its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride (GaN) layer 23 is positioned on the resilient coating 22.Be positioned at the active luminescent layer 24 on n type gallium nitride (GaN) layer 23, its material is InGaN (InGaN).P type coating (claddinglayer) 25 is positioned on the active luminescent layer 24, and the material of p type coating 25 is the common doped aluminum nitride indium (Al of magnesium (Mg) and gallium (Ga) 1-xIn xN), 0≤X＜1 wherein.To 3000 dusts, spend to 1200 degree between Celsius 600 by the growth temperature between 50 dusts for p type coating (cladding layer) 25 thickness.
Second embodiment of LED structure with gallium nitride system of the present invention can comprise an electrode layer 27 further, is positioned on contact layer 26 or n type gallium nitride (GaN) layer 23.
Fig. 4 is the 3rd embodiment of the LED structure with gallium nitride system according to the present invention.
The 3rd embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 31, resilient coating (buffer layer) 32, n type gallium nitride (GaN) layer 33, active luminescent layer 34, dual coating (double cladding layer) 35, and contact layer 36.
Substrate 31, its material are alumina single crystal (Sapphire).Be positioned at the resilient coating (buffer layer) 32 on the substrate 31, its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride (GaN) layer 33 is positioned on the resilient coating 32.Be positioned at the active luminescent layer 34 on n type gallium nitride (GaN) layer 33, its material is InGaN (InGaN).Be positioned at the dual coating (double cladding layer) 35 on the active luminescent layer 34, it comprises: first coating (firstcladding layer) 351, and second coating (second cladding layer) 352.Be positioned at first coating (first cladding layer) 351 on the active luminescent layer 34, its material is the common doped aluminum nitride indium (Al of magnesium (Mg) and gallium (Ga) 1-xIn xN), 0≤X＜1 wherein.First coating, 351 thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.Be positioned at second coating (second claddinglayer) 352 on first coating 351, its material is magnesium (Mg) doped aluminum nitride indium (Al 1-zIn zN), 0≤Z＜1 wherein.Second coating, 352 thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
Be positioned at the contact layer 36 on the dual coating 35, its material is magnesium doping (Mg-doped) p type gallium nitride (GaN).
The 3rd embodiment of LED structure with gallium nitride system of the present invention can comprise an electrode layer 37 further, is positioned on contact layer 36 or n type gallium nitride (GaN) layer 33.
Fig. 5 is the 4th embodiment of the LED structure with gallium nitride system according to the present invention.
The 4th embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 41, resilient coating 42, n type gallium nitride (GaN) layer 43, active luminescent layer 44, dual coating 45, and contact layer 46.
Substrate 41, its material is an alumina single crystal.Be positioned at the resilient coating 42 on the substrate 41, its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride (GaN) layer 43 is positioned on the resilient coating 42.Be positioned at the active luminescent layer 44 of n type gallium nitride (GaN) layer 43, its material is InGaN (InGaN).Be positioned at the dual coating 45 on the active luminescent layer 44, it comprises: first coating 451 and second coating 452.Be positioned at first coating 451 on the active luminescent layer 44, its material is magnesium (Mg) doped p type aluminum indium nitride (Al 1-xIn xN), 0≤X＜1 wherein.First coating, 451 thickness between 50 () between 3000 (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.Be positioned at second coating 452 on first coating 451, its material is the common doped aluminum nitride indium (Al of magnesium (Mg) and gallium (Ga) 1-zIn zN), 0≤Z＜1 wherein.Second coating, 452 thickness between 50 () between 3000 (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
Be positioned at the contact layer on the dual coating 45, its material is magnesium (Mg) doped aluminum nitride indium (Al 1-xIn xN) p type gallium nitride (GaN), wherein 0≤X＜1.
The 4th embodiment of LED structure with gallium nitride system of the present invention can comprise an electrode layer 47 further, is positioned on contact layer 46 or n type gallium nitride (GaN) layer 43.
The above is preferred embodiment of the present invention only for this paper, is not in order to limiting claim of the present invention, and any other all change or modification that does not break away from disclosed spirit and finish all should belong to claim of the present invention.

Claims (16)

1. LED structure with gallium nitride system, it comprises:
Substrate, its material is an alumina single crystal;
Resilient coating, its material are aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 and being positioned on this substrate wherein;
N type gallium nitride layer is positioned on this resilient coating;
Active luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
P type coating, its material are magnesium doped aluminum nitride indium (Al 1-xIn xN), 0≤X＜1 and being positioned on this activity luminescent layer wherein; And
Contact layer, its material are magnesium doped p type gallium nitride, are positioned on this p type coating.
2. light emitting diode construction as claimed in claim 1, wherein the thickness of this p type coating between 50 dusts to 3000 dusts.
3. light emitting diode construction as claimed in claim 1, wherein the growth temperature of this p type coating is spent to 1200 degree between Celsius 600.
4. light emitting diode construction as claimed in claim 1 comprises an electrode layer further, and it is positioned on this contact layer or this n type gallium nitride layer.
5. LED structure with gallium nitride system, it comprises:
Substrate, its material is an alumina single crystal;
Resilient coating, its material are aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein, and be positioned on this substrate;
N type gallium nitride layer is positioned on this resilient coating;
Active luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
P type coating is positioned on this activity luminescent layer, and the material of this p type coating is the common doped aluminum nitride indium of magnesium and gallium (Al 1-xIn xN), 0≤X＜1 wherein; And
Contact layer, its material are magnesium doped p type gallium nitride, are positioned on this p type coating.
6. light emitting diode construction as claimed in claim 5, wherein this p type coating thickness between 50 dusts to 3000 dusts.
7. light emitting diode construction as claimed in claim 5, wherein this p type coating growth temperature is spent to 1200 degree between Celsius 600.
8. light emitting diode construction as claimed in claim 5 comprises an electrode layer further, and it is positioned on this contact layer or this n type gallium nitride layer.
9. LED structure with gallium nitride system, it comprises:
Substrate, its material is an alumina single crystal;
Resilient coating, its material are aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein, and be positioned on this substrate;
N type gallium nitride layer is positioned on this resilient coating;
Active luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
Dual coating is positioned on this activity luminescent layer, and it comprises:
First coating, its material are the common doped aluminum nitride indium of magnesium and gallium (Al 1-xIn xN), wherein 0≤X＜1 is positioned on this activity luminescent layer; And
Second coating, its material are magnesium doped aluminum nitride indium (Al 1-zIn zN), wherein 0≤Z＜1 is positioned on this first coating; And
Contact layer, its material are magnesium doped p type gallium nitride, are positioned on this dual coating.
10. light emitting diode construction as claimed in claim 9, this first coating thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
11. light emitting diode construction as claimed in claim 9, this second coating thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
12. light emitting diode construction as claimed in claim 9 comprises an electrode layer further, it is positioned on this contact layer or this n type gallium nitride layer.
13. a LED structure with gallium nitride system, it comprises:
Substrate, its material is an alumina single crystal;
Resilient coating, its material are aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein, and be positioned on this substrate;
N type gallium nitride layer is positioned on this resilient coating;
Active luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
Dual coating is positioned on this activity luminescent layer, and it comprises:
First coating, its material are magnesium doped p type aluminum indium nitride (Al 1-xIn xN), 0≤X＜1 wherein, and be positioned on this activity luminescent layer; And
Second coating, its material are the common doped aluminum nitride indium of magnesium and gallium (Al 1-zIn zN), 0≤Z＜1 wherein, and be positioned on this first coating; And
Contact layer, its material are magnesium doped aluminum nitride indium (Al 1-xIn xN) p type gallium nitride, wherein 0≤X＜1 is positioned on this dual coating.
14. light emitting diode construction as claimed in claim 13, this first coating thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
15. light emitting diode construction as claimed in claim 13, this second coating thickness between 50 dusts () between 3000 dusts (), and the growth temperature between Celsius 600 spend Celsius 1200 the degree between.
16. light emitting diode construction as claimed in claim 13 comprises an electrode layer further, it is positioned on this contact layer or this n type gallium nitride layer.
CNB2004100739289A 2004-09-06 2004-09-06 LED structure with gallium nitride system Active CN100336235C (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101527341B (en) * 2008-03-07 2013-04-24 展晶科技(深圳)有限公司 III-family nitrogen compound semiconductor light-emitting diode

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JP3304787B2 (en) * 1996-09-08 2002-07-22 豊田合成株式会社 Semiconductor light emitting device and method of manufacturing the same
JP2004006957A (en) * 1999-02-05 2004-01-08 Nippon Telegr & Teleph Corp <Ntt> Optical semiconductor equipment
JP3719047B2 (en) * 1999-06-07 2005-11-24 日亜化学工業株式会社 Nitride semiconductor device
CN1134849C (en) * 1999-09-20 2004-01-14 晶元光电股份有限公司 Light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101527341B (en) * 2008-03-07 2013-04-24 展晶科技(深圳)有限公司 III-family nitrogen compound semiconductor light-emitting diode

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Effective date of registration: 20091218

Address after: Taoyuan County of Taiwan Province

Co-patentee after: LUMENS Limited by Share Ltd

Patentee after: Bright circle Au Optronics Co

Address before: Taoyuan County of Taiwan Province

Patentee before: Formosa Epitaxy Incorporation