CN110854253B - Ultraviolet LED chip and manufacturing method thereof - Google Patents

Ultraviolet LED chip and manufacturing method thereof Download PDF

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Publication number
CN110854253B
CN110854253B CN201911272005.9A CN201911272005A CN110854253B CN 110854253 B CN110854253 B CN 110854253B CN 201911272005 A CN201911272005 A CN 201911272005A CN 110854253 B CN110854253 B CN 110854253B
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layer
opening
semiconductor layer
gas
semiconductor
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CN110854253A (en
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仇美懿
林耀辉
庄家铭
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Foshan Nationstar Semiconductor Co Ltd
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Foshan Nationstar Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses an ultraviolet LED chip and a manufacturing method thereof, wherein the chip comprises a substrate, a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, and the second semiconductor layer is arranged on the opening layer; the opening layer comprises an In xGa(1‑x) N layer, an Al yGa1‑y N layer and a GaN layer, wherein the In xGa(1‑x) N layer is arranged on the active layer, and the Al yGa1‑y N layer is arranged between the In xGa(1‑x) N layer and the GaN layer; the second semiconductor layer is provided with a hole, the hole is etched from the second semiconductor layer to the opening layer, the hole is filled with a reflecting material, and the reflecting material forms a reflecting layer; the opening layer and the reflecting layer form an irregular light guide column, so that the total reflection of the second semiconductor layer on the purple light is reduced, and the light emitting efficiency of the chip is improved.

Description

Ultraviolet LED chip and manufacturing method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to an ultraviolet LED chip and a manufacturing method thereof.
Background
Ultraviolet LEDs have been widely used in daily life including health lighting, disinfection, quick printing, nail beautification, plant lighting, and the like.
With the wide increase in applications, the demand for the luminance portion is also sharply increased. However, the limitation of the violet light material is that the brightness can be effectively improved, which is an important issue.
Disclosure of Invention
The invention aims to solve the technical problem of providing an ultraviolet LED chip and a manufacturing method thereof, and the brightness of the chip is effectively improved.
In order to solve the technical problem, the invention provides an ultraviolet LED chip, which comprises a substrate, a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, and the second semiconductor layer is arranged on the opening layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, and the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer;
The second semiconductor layer is provided with a hole, the hole is etched from the second semiconductor layer to the opening layer, the hole is filled with a reflecting material, and the reflecting material forms a reflecting layer;
The opening layer and the reflecting layer form an irregular light guide column, so that total reflection of the second semiconductor layer on purple light is reduced, and light emitting efficiency of the chip is improved.
As a modification of the above scheme, x=0.1 to 0.5, and y=0.1 to 0.3.
As a modification of the above scheme, x=0.1 to 0.3, and y=0.1 to 0.2.
As an improvement of the scheme, the thickness of the In xGa(1-x) N layer is 20-60 nm, the thickness of the Al yGa1-y N layer is 10-50 nm, and the thickness of the GaN layer is 100-300 nm.
As an improvement of the scheme, the depth of the holes is 200-500 nm.
As a modification of the above scheme, the reflective layer material is silver or/and aluminum.
Correspondingly, the invention also provides a manufacturing method of the ultraviolet LED chip, which comprises the following steps:
sequentially forming a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer on a substrate;
etching the second semiconductor layer until the opening layer forms a hole;
Filling a reflecting material in the hole to form a reflecting layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, and the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer;
The opening layer and the reflecting layer form an irregular light guide column, so that total reflection of the second semiconductor layer on purple light is reduced, and light emitting efficiency of the chip is improved.
As an improvement of the above scheme, the preparation method of the opening layer is as follows:
Introducing TEIn gas and TEGa gas, wherein the total amount of the introduced TEIn gas and the TEGa gas is 40-60 sccm, and forming an In xGa(1-x) N layer under the conditions that the temperature is 700-900 ℃ and the pressure is 100-300 torr;
introducing TEAL gas and TEGa gas, wherein the total amount of the introduced TEAL gas and the TEGa gas is 40-60 sccm, and forming an Al yGa1-y N layer under the conditions that the temperature is 800-1050 ℃ and the pressure is 100-300 torr;
Introducing TEGa gas with the total introducing quantity of 40-60 sccm, and forming a GaN layer under the conditions of the temperature of 800-1000 ℃ and the pressure of 100-300 torr.
As an improvement of the above scheme, the ratio of the inflow amount of the TEIn gas to the inflow amount of the TEGa gas is 1: (0.4-0.7), the ratio of the inflow amount of TEAL gas to the inflow amount of TEGa gas is 1: (0.4-0.7).
As an improvement of the scheme, after the reflecting layer is formed, the chip is annealed at the temperature of 450-600 ℃ for 20-60 min.
The implementation of the invention has the following beneficial effects:
the invention provides an ultraviolet LED chip which comprises a substrate, a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, and the second semiconductor layer is arranged on the opening layer; the second semiconductor layer is provided with a hole, the hole is etched from the second semiconductor layer to the opening layer, the hole is filled with a reflecting material, and the reflecting material forms a reflecting layer; according to the invention, the irregular light guide columns are formed by the opening layer and the reflecting layer, so that the total reflection of the second semiconductor layer on the purple light is reduced, and the light emitting efficiency of the chip is improved.
Drawings
FIG. 1 is a schematic view of the structure of an ultraviolet LED chip of the present invention;
FIG. 2 is a schematic view of the light emission of the present invention;
fig. 3 is a schematic structural view of an opening layer of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1, the ultraviolet LED chip provided by the invention comprises a substrate 10, a first semiconductor layer 20, an active layer 30, an opening layer 40 and a second semiconductor layer 50, wherein the first semiconductor layer 20 is arranged on the substrate 10, the active layer 30 is arranged on the first semiconductor layer 20, the opening layer 40 is arranged on the active layer 30, and the second semiconductor layer 50 is arranged on the opening layer 40.
The second semiconductor layer 50 is provided with holes etched from the second semiconductor layer 50 to the opening layer 40, the holes being filled with a reflective material, which forms the reflective layer 60.
The opening layer 40 and the reflecting layer 60 of the present invention form an irregular light guide column, so as to reduce total reflection of the second semiconductor layer 50 on the violet light, thereby improving the light emitting efficiency of the chip.
Specifically, referring to fig. 2, after the light emitted by the active layer passes through the opening layer and the reflecting layer, total reflection of the second semiconductor layer on the ultraviolet light is reduced, so that more light is emitted from the front surface of the chip, and the light emitting efficiency of the chip is improved.
Referring to fig. 3, the opening layer 40 includes an In xGa(1-x) N layer 41, an Al yGa1-y N layer 42, and a GaN layer 43, the In xGa(1-x) N layer 41 is disposed on the active layer 30, and the Al yGa1-y N layer 42 is disposed between the In xGa(1-x) N layer 41 and the GaN layer 43.
The In content of the In xGa(1-x) N layer and the Al content of the Al yGa1-y N layer all have an important effect on the crystal structure of the epitaxial layer. If the content of In is too high, the light absorption amount of the In xGa(1-x) N layer is increased, and the light extraction efficiency of the chip is reduced; if the In content is too low, the light guiding effect of the opening layer and the reflective layer is not obvious.
The Al yGa1-y N layer is used for increasing the lattice difference between the opening layer and the reflecting layer, and if the content of Al is too high or too low, the crystal quality of the epitaxial layer is affected, and the luminous efficiency of the chip is reduced.
Preferably, x=0.1 to 0.5, y=0.1 to 0.3.
More preferably, x=0.1 to 0.3 and y=0.1 to 0.2.
It should be noted that the thickness of each layer of the opening layer plays an important role in the light-emitting efficiency of the chip. If the thickness of the In xGa(1-x) N layer is too thick, the light absorption amount of the In xGa(1-x) N layer is increased, and the light emitting efficiency of the chip is reduced; if the thickness of the In xGa(1-x) N layer is too small, the hole depth is too shallow, and the reflective layer and the opening layer are difficult to form a light guide column.
Preferably, the thickness of the In xGa(1-x) N layer is 20-60 nm, the thickness of the Al yGa1-y N layer is 10-50 nm, and the thickness of the GaN layer is 100-300 nm.
In order to further reduce total reflection of violet light from the GaN, the holes are etched into the GaN layer of the opening layer. Since the GaN crystal itself forms hexagonal voids, the voids of the present invention are eventually hexagonal.
Preferably, the depth of the holes is 200-500 nm.
The reflective layer material of the present invention is silver or/and aluminum. If the light emitted by the chip is purple light, the reflecting material is silver; if the light emitted by the chip is violet and blue, the reflective material is preferably silver or aluminum.
The ultraviolet LED chip of the present invention further includes a transparent conductive layer 70, a first electrode 81, and a second electrode 82 disposed on the second semiconductor layer 50. The ultraviolet LED chip of the present invention may be a front-loading structure, a flip-chip structure, or a vertical structure, and the present invention is not particularly limited.
Correspondingly, the invention also provides a manufacturing method of the ultraviolet LED chip, which comprises the following steps:
1. sequentially forming a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer on a substrate;
specifically, a first semiconductor layer, an active layer, an opening layer, and a second semiconductor layer are formed on a substrate using an MOCVD process.
The first semiconductor layer, the active layer and the second semiconductor layer are made of gallium nitride materials and are formed by adopting the existing process.
Specifically, the opening layer includes an In xGa(1-x) N layer, an Al yGa1-y N layer, and a GaN layer, the In xGa(1-x) N layer is disposed on the active layer, and the Al yGa1-y N layer is disposed between the In xGa(1-x) N layer and the GaN layer.
The In content of the In xGa(1-x) N layer and the Al content of the Al yGa1-y N layer all have an important effect on the crystal structure of the epitaxial layer. If the content of In is too high, the light absorption amount of the In xGa(1-x) N layer is increased, and the light extraction efficiency of the chip is reduced; if the In content is too low, the light guiding effect of the opening layer and the reflective layer is not obvious.
The Al yGa1-y N layer is used for increasing the lattice difference between the opening layer and the reflecting layer, and if the content of Al is too high or too low, the crystal quality of the epitaxial layer is affected, and the luminous efficiency of the chip is reduced.
Preferably, x=0.1 to 0.5, y=0.1 to 0.3.
More preferably, x=0.1 to 0.3 and y=0.1 to 0.2.
It should be noted that the thickness of each layer of the opening layer plays an important role in the light-emitting efficiency of the chip. If the thickness of the In xGa(1-x) N layer is too thick, the light absorption amount of the In xGa(1-x) N layer is increased, and the light emitting efficiency of the chip is reduced; if the thickness of the In xGa(1-x) N layer is too small, the hole depth is too shallow, and the reflective layer and the opening layer are difficult to form a light guide column.
Preferably, the thickness of the In xGa(1-x) N layer is 20-60 nm, the thickness of the Al yGa1-y N layer is 10-50 nm, and the thickness of the GaN layer is 100-300 nm.
The preparation method of the opening layer comprises the following steps:
Introducing TEIn gas and TEGa gas, wherein the total amount of the introduced TEIn gas and the TEGa gas is 40-60 sccm, and forming an In xGa(1-x) N layer under the conditions that the temperature is 700-900 ℃ and the pressure is 100-300 torr;
introducing TEAL gas and TEGa gas, wherein the total amount of the introduced TEAL gas and the TEGa gas is 40-60 sccm, and forming an Al yGa1-y N layer under the conditions that the temperature is 800-1050 ℃ and the pressure is 100-300 torr;
Introducing TEGa gas with the total introducing quantity of 40-60 sccm, and forming a GaN layer under the conditions of the temperature of 800-1000 ℃ and the pressure of 100-300 torr.
Preferably, the ratio of the inflow amount of the TEIn gas to the inflow amount of the TEGa gas is 1: (0.4-0.7), the ratio of the inflow amount of TEAL gas to the inflow amount of TEGa gas is 1: (0.4-0.7).
More preferably, the ratio of the inflow amount of TEIn gas to that of TEGa gas is 1: (0.4-0.5), the ratio of the inflow amount of TEAL gas to the inflow amount of TEGa gas is 1: (0.4-0.5).
2. Etching the second semiconductor layer until the opening layer forms a hole;
In order to further reduce total reflection of violet light from the GaN, the holes are etched into the GaN layer of the opening layer. Since the GaN crystal itself forms hexagonal voids, the voids of the present invention are eventually hexagonal.
Preferably, the depth of the holes is 200-500 nm.
3. Filling a reflecting material in the hole to form a reflecting layer;
the invention adopts an evaporation or sputtering method to fill the reflective material in the holes so as to form the reflective layer.
It should be noted that, the opening layer and the reflecting layer of the invention form an irregular light guide column, so as to reduce total reflection of the second semiconductor layer on the purple light and improve the light emitting efficiency of the chip.
The reflecting layer material of the invention is silver or/and aluminum.
If the light emitted by the chip is purple light, the reflecting material is silver; if the light emitted by the chip is violet and blue, the reflective material is preferably silver or aluminum.
In order to firmly infiltrate the reflective material of the hole, the reflective material is in good contact with the second semiconductor layer and the opening layer, stress between the reflective material and the second semiconductor layer is reduced, and after the reflective layer is formed, the chip is annealed at the annealing temperature of 450-600 ℃ for 20-60 min.
The invention will be further illustrated by the following specific examples
Example 1
An ultraviolet LED chip comprises a substrate, a first semiconductor layer, an active layer, an opening layer, a second semiconductor layer, a transparent conducting layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, the second semiconductor layer is arranged on the opening layer, and the transparent conducting layer is arranged on the second semiconductor layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer, x=0.1 and y=0.2, the thickness of the In xGa(1-x) N layer is 40nm, the thickness of the Al yGa1-y N layer is 30nm, and the thickness of the GaN layer is 200nm;
The second semiconductor layer is provided with holes, the holes are etched from the second semiconductor layer to the opening layer, and silver is filled in the holes.
Example 2
An ultraviolet LED chip comprises a substrate, a first semiconductor layer, an active layer, an opening layer, a second semiconductor layer, a transparent conducting layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, the second semiconductor layer is arranged on the opening layer, and the transparent conducting layer is arranged on the second semiconductor layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer, x=0.2 and y=0.1, the thickness of the In xGa(1-x) N layer is 30nm, the thickness of the Al yGa1-y N layer is 20nm, and the thickness of the GaN layer is 150nm;
The second semiconductor layer is provided with holes, the holes are etched from the second semiconductor layer to the opening layer, and silver is filled in the holes.
Example 3
An ultraviolet LED chip comprises a substrate, a first semiconductor layer, an active layer, an opening layer, a second semiconductor layer, a transparent conducting layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, the second semiconductor layer is arranged on the opening layer, and the transparent conducting layer is arranged on the second semiconductor layer;
the opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer, x=0.4 and y=0.3, the thickness of the In xGa(1-x) N layer is 50nm, the thickness of the Al yGa1-y N layer is 10nm, and the thickness of the GaN layer is 250nm;
The second semiconductor layer is provided with holes, the holes are etched from the second semiconductor layer to the opening layer, and silver is filled in the holes.
Comparative example 1
The ultraviolet LED chip comprises a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conducting layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the second semiconductor layer is arranged on the active layer, and the transparent conducting layer is arranged on the second semiconductor layer.
The chip sizes of examples 1 to 3 were the same as those of comparative example 1, and the structures of the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, the transparent conductive layer, the first electrode, and the second electrode were the same.
The above disclosure is only a preferred embodiment of the present invention, and it is needless to say that the scope of the invention is not limited thereto, and therefore, the equivalent changes according to the claims of the present invention still fall within the scope of the present invention.

Claims (9)

1. The ultraviolet LED chip is characterized by comprising a substrate, a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer, wherein the first semiconductor layer is arranged on the substrate, the active layer is arranged on the first semiconductor layer, the opening layer is arranged on the active layer, and the second semiconductor layer is arranged on the opening layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, and the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer; wherein x=0.1 to 0.5 and y=0.1 to 0.3;
The second semiconductor layer is provided with a hole, the hole is etched from the second semiconductor layer to the opening layer, the hole is filled with a reflecting material, and the reflecting material forms a reflecting layer;
The opening layer and the reflecting layer form an irregular light guide column, so that total reflection of the second semiconductor layer on purple light is reduced, and light emitting efficiency of the chip is improved.
2. The ultraviolet LED chip of claim 1, wherein x = 0.1-0.3 and y = 0.1-0.2.
3. The ultraviolet LED chip of claim 1, wherein the In xGa(1-x) N layer has a thickness of 20 to 60nm, the Al yGa1-y N layer has a thickness of 10 to 50nm, and the GaN layer has a thickness of 100to 300nm.
4. The ultraviolet LED chip of claim 3, wherein the depth of the hole is 200-500 nm.
5. The ultraviolet LED chip of claim 1, wherein the reflective layer material is silver or/and aluminum.
6. The manufacturing method of the ultraviolet LED chip is characterized by comprising the following steps of:
sequentially forming a first semiconductor layer, an active layer, an opening layer and a second semiconductor layer on a substrate;
etching the second semiconductor layer until the opening layer forms a hole;
Filling a reflecting material in the hole to form a reflecting layer;
The opening layer comprises an In xGa(1-x) N layer, an Al yGa1-y N layer and a GaN layer, wherein the In xGa(1-x) N layer is arranged on the active layer, and the Al yGa1-y N layer is arranged between the In xGa(1-x) N layer and the GaN layer; wherein x=0.1 to 0.5 and y=0.1 to 0.3;
The opening layer and the reflecting layer form an irregular light guide column, so that total reflection of the second semiconductor layer on purple light is reduced, and light emitting efficiency of the chip is improved.
7. The method for manufacturing an ultraviolet LED chip according to claim 6, wherein the method for manufacturing the opening layer comprises the steps of:
Introducing TEIn gas and TEGa gas, wherein the total amount of the introduced TEIn gas and the TEGa gas is 40-60 sccm, and forming an In xGa(1-x) N layer under the conditions that the temperature is 700-900 ℃ and the pressure is 100-300 torr;
introducing TEAL gas and TEGa gas, wherein the total amount of the introduced TEAL gas and the TEGa gas is 40-60 sccm, and forming an Al yGa1-y N layer under the conditions that the temperature is 800-1050 ℃ and the pressure is 100-300 torr;
Introducing TEGa gas with the total introducing quantity of 40-60 sccm, and forming a GaN layer under the conditions of the temperature of 800-1000 ℃ and the pressure of 100-300 torr.
8. The method of manufacturing an ultraviolet LED chip according to claim 7, wherein a ratio of an inflow amount of TEIn gas to an inflow amount of TEGa gas is 1: (0.4-0.7), the ratio of the inflow amount of TEAL gas to the inflow amount of TEGa gas is 1: (0.4-0.7).
9. The method of manufacturing an ultraviolet LED chip according to claim 6, wherein after the reflective layer is formed, the chip is annealed at 450 to 600 ℃ for 20 to 60 minutes.
CN201911272005.9A 2019-12-12 2019-12-12 Ultraviolet LED chip and manufacturing method thereof Active CN110854253B (en)

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Publication number Priority date Publication date Assignee Title
CN111769185A (en) * 2020-07-31 2020-10-13 佛山紫熙慧众科技有限公司 Novel ultraviolet LED chip structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175295A (en) * 2003-12-12 2005-06-30 Hitachi Ltd Semiconductor optical element and optical module
CN208284494U (en) * 2018-01-26 2018-12-25 厦门三安光电有限公司 UV LED chips structure
CN211743180U (en) * 2019-12-12 2020-10-23 佛山市国星半导体技术有限公司 Ultraviolet LED chip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175295A (en) * 2003-12-12 2005-06-30 Hitachi Ltd Semiconductor optical element and optical module
CN208284494U (en) * 2018-01-26 2018-12-25 厦门三安光电有限公司 UV LED chips structure
CN211743180U (en) * 2019-12-12 2020-10-23 佛山市国星半导体技术有限公司 Ultraviolet LED chip

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