CN1747134A - Production of crystal layer with nitride and its structure - Google Patents
Production of crystal layer with nitride and its structure Download PDFInfo
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- CN1747134A CN1747134A CN 200410073929 CN200410073929A CN1747134A CN 1747134 A CN1747134 A CN 1747134A CN 200410073929 CN200410073929 CN 200410073929 CN 200410073929 A CN200410073929 A CN 200410073929A CN 1747134 A CN1747134 A CN 1747134A
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Abstract
Its structure is comprised of a baseboard used as base material, at least one first intermediate layer formed by stacking All-x-yGaxInyN on base material, at least one second intermediate layer formed by stacking SixNy or MgxNy on the first intermediate layer, and a nitride epitaxy layer formed by stacking nitride material on top first intermediate layer or second intermediate layer. The next epitaxy layer is formed on second intermediate layer to shield epitaxy growth in order to reduce amount of defect lattice and improve quality of epitaxy layer.
Description
Technical field
The present invention is about a kind of crystal layer with nitride manufacture method and structure thereof, and the structure and the processing procedure thereof of special intermediary layer particularly is provided.
Background technology
Traditional gallium nitride (GaN) epitaxial layer, be to go up in a substrate (substrate) to form a resilient coating (buffer layer), be to form crystal layer with nitride on this resilient coating, wherein, generally the resilient coating of this class is the Al that adopts a kind of low temperature (200～900 ℃)
xGa
1-xThe N or the In of low temperature
xGa
1-xThe N material deposits and forms, and then the gallium nitride of growth high temperature.Yet,, make the longer gallium nitride defect concentration of the one-tenth that utilizes this low temperature buffer layer up to 10 because the lattice constant difference of the lattice constant of gallium nitride and substrate is excessive
10/ cm
3More than.Such light emitting diode construction that gallium nitride material constituted can make assembly ESD bear brownout, causes its life-span to shorten, and and causes its component characteristic variation.
Therefore, in order to overcome above-mentioned defective, the disappearance that the present invention is based on existing crystal layer with nitride is invented.
Summary of the invention
About the present invention is a kind of crystal layer with nitride manufacture method and structure thereof, with restriction and the disappearance in one of reality solution or even several aforementioned related art.
A kind of crystal layer with nitride manufacture method of the present invention and structure main purpose thereof are to improve the intermediary layer (intermidium layer) structure and the processing procedure thereof that provide suitable the defect concentration of crystal layer with nitride, even can reduce defect concentration to 10
10/ cm
3Below.For achieving the above object, the invention provides a kind of crystal layer with nitride manufacture method and structure thereof, it is mainly on a substrate, by crystal technique growth aluminum indium nitride gallium (Al of heap of stone
1-x-yGa
xIn
yN) first intermediary layer and silicon nitride (Si
xN
y) or magnesium nitride (Mg
xN
y) formed second intermediary layer of material, in order to intermediary layer as the depositing nitride epitaxial layer.
Based on aforementioned crystal layer with nitride manufacture method of the present invention and structure thereof, effect that it can reach and effect, this is because silicon nitride or magnesium nitride can form the shielding (mask) of clustering (cluster) on aluminum indium nitride gallium surface, make ensuing aluminum indium nitride gallium to grow up at silicon nitride or above the magnesium nitride, can be the shielding that these clusterings are crossed in the side direction growth on the contrary by the aluminum indium nitride gallium on next door, form and grow more low-density crystal layer with nitride, therefore, can improve the follow-up too much problem of crystal layer with nitride manufacture method defect concentration of building crystalline substance of silicon nitride or magnesium nitride.
Purpose of the present invention and function will be more clear after cooperating following Reference numeral and being described further.
Description of drawings
Accompanying drawing is shown respectively forms the specific embodiment of assembly for providing as specifically presenting described in this specification, and explains that main purpose of the present invention is to promote understanding of the present invention.
Fig. 1 is shown to be the sectional schematic diagram of first kind of preferred embodiment of crystal layer with nitride of the present invention.
Fig. 2 is shown to be the concrete implementation step flow chart of the crystal layer with nitride of Fig. 1.
Fig. 3 is shown to be the sectional schematic diagram of second kind of preferred embodiment of crystal layer with nitride of the present invention.
Fig. 4 is shown to be the sectional schematic diagram of the third preferred embodiment of crystal layer with nitride of the present invention.
Fig. 5 is shown to be the concrete implementation step flow chart of the crystal layer with nitride of Fig. 4.
Fig. 6 is shown to be the sectional schematic diagram of the 4th kind of preferred embodiment of crystal layer with nitride of the present invention.
Embodiment
Below will cooperate appended Reference numeral to be described in further detail at preferred embodiment of the present invention.Some yardstick is understood the present invention so that clearer description to be provided to help those skilled in the art with the expression that other partly relevant scale ratio is exaggerated.
Fig. 1 is shown to be a kind of preferred embodiment of crystal layer with nitride of the present invention, and Fig. 2 is shown to be the concrete implementation step flow chart of the crystal layer with nitride of Fig. 1.Shown with reference to figure 1, its be on the substrate 101 in regular turn storehouse form the nitride that one first intermediary layer 102, one second intermediary layer 103 and mononitride epitaxial layer 104 are constituted, and this second intermediary layer 103 is in order to form the shielding (mask) of clustering (cluster) on these first intermediary layer, 102 surfaces, make the crystal layer with nitride 104 of follow-up growth understand, and side direction is developed to this second intermediary layer, 103 tops by growth on the first exposed intermediary layer 102.Wherein, shown with reference to figure 2, step comprises: step 201, and by crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this substrate 101 is aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN), its x 〉=0, y 〉=0,1 〉=x+y 〉=0, and thickness is first intermediary layer 102 of 5～10 dusts (); Step 202, by crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this first intermediary layer 102 is silicon nitride (Si
xN
y), and thickness is second intermediary layer 103 of 5～100 dusts; Step 203, by crystal technique of heap of stone, using the growth temperature is 700～1100 ℃, forms crystal layer with nitride 104 on this second intermediary layer 103.
Aforesaid second intermediary layer 103 can substitute and is magnesium nitride (Mg
xN
y) material forms.
In aforementioned nitride stacked crystal layer structure of the present invention and processing procedure thereof, the silicon nitride of this second intermediary layer 103 or magnesium nitride, can form the shielding of clustering in these first intermediary layer, 102 surfaces, make that the crystal layer with nitride 104 of follow-up growth can be by growing up on the first exposed intermediary layer 102, and side direction is developed to this second intermediary layer, 103 tops, therefore, crystal layer with nitride 104 defect concentrations of growing up after this second intermediary layer 103 can get and reduce.
Moreover Fig. 3 is shown to be second kind of preferred embodiment of crystal layer with nitride of the present invention.In the shown step of earlier figures 2, after carrying out step 201 and step 202 in regular turn, increase by a step again for passing through crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this second intermediary layer 103 is the aluminum indium nitride gallium, and thickness is first intermediary layer 102 of 5～10 dusts, be to repeat on this first intermediary layer 102 another second intermediary layer 103 of storehouse, and this repeats for several times and interleaving stack forms this first intermediary layer (102) and second intermediary layer 103, at last on second intermediary layer 103 of top layer, carry out step 203 and form its crystal layer with nitride 104.Therefore, shown with reference to figure 3, its nitride stacked crystal layer structure is to repeat interleaving stack number layer first intermediary layer 102 and second intermediary layer 103 on the substrate 101, and the nitride stacked crystal layer structure that storehouse mononitride epitaxial layer 104 is constituted on second intermediary layer 103 of top, make deposition form the periodic structure person of multilayer first intermediary layer 102 and second intermediary layer, 103 interleaving stacks.
In second kind of preferred embodiment based on aforementioned nitride manufacture method of the present invention, the silicon nitride of this second intermediary layer 103 or magnesium nitride, can form the shielding of clustering in each first intermediary layer, 102 surfaces, first intermediary layer 102 or the crystal layer with nitride 104 that make follow-up growth, understand on first intermediary layer 102 that exposes by second intermediary layer, 103 belows and grow up, and side direction is developed to this second intermediary layer, 103 tops, therefore, the aluminum indium nitride gallium and crystal layer with nitride 104 defect concentrations of first intermediary layer 102 of growing up after this second intermediary layer 103 can be improved.
Fig. 4 is shown to be the third preferred embodiment of crystal layer with nitride of the present invention, and Fig. 5 is shown to be the concrete implementation step flow chart of the crystal layer with nitride of Fig. 4.Shown with reference to figure 4, its be on the substrate 401 in regular turn storehouse form one first intermediary layer 402, one second intermediary layer 403, another first intermediary layer 402 and mononitride epitaxial layer 404 and constitute, and this second intermediary layer 403 is in order to form the shielding (mask) of clustering (cluster) on these first intermediary layer, 402 surfaces, make first intermediary layer 402 of follow-up growth to extend on the exposed region by preceding one deck first intermediary layer 402, and extend laterally to this second intermediary layer, 403 tops.Moreover first intermediary layer 402 of this top is in order to promote and follow-up crystal layer with nitride 404 qualities.Wherein, shown with reference to figure 5, step comprises: step 501, and by crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this substrate 401 is the aluminum indium nitride gallium, and thickness is first intermediary layer 402 of 5～10 dusts; Step 502, by crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this first intermediary layer 402 is silicon nitride, and thickness is second intermediary layer 403 of 5～100 dusts; Step 503, by crystal technique of heap of stone, using the growth temperature is 200～1000 ℃, forming material on this second intermediary layer 403 is the aluminum indium nitride gallium, and thickness is another first intermediary layer 402 of 5～10 dusts; Step 504, by crystal technique of heap of stone, using the growth temperature is 700～1100 ℃, forming material on first intermediary layer 402 of top layer is crystal layer with nitride 404.
Aforesaid second resilient coating 403 can be to substitute to be formed by the magnesium nitride material.
Moreover Fig. 6 is shown to be the 4th kind of preferred embodiment of crystal layer with nitride of the present invention.In the shown step of earlier figures 5, after carrying out step 501, step 502 and step 503 in regular turn, staggered again repeating step 502 and step 503, and repetition in regular turn is staggered to form this second intermediary layer 403 and first intermediary layer 402 for several times, after making that top layer is one first intermediary layer 402, carry out step 504 again and form its crystal layer with nitride 404.Therefore, shown with reference to figure 6, its crystal layer with nitride is to repeat interleaving stack number layer first intermediary layer 402 and second intermediary layer 403 on the substrate 401, and storehouse mononitride epitaxial layer 404 constitutes on first intermediary layer 402 of top, makes deposition form the periodic structure person of multilayer first intermediary layer 402 and second intermediary layer, 403 interleaving stacks.
In the 3rd or the 4th kind of preferred embodiment based on aforementioned crystal layer with nitride manufacture method of the present invention, the silicon nitride of this second intermediary layer 403 or magnesium nitride, can form the shielding of clustering in first intermediary layer, 402 surfaces of preceding one deck, first intermediary layer 402 that makes these second intermediary layer, 403 follow-up growth, understand on first intermediary layer 402 that exposes by second intermediary layer, 403 belows and grow up, and side direction is developed to this second intermediary layer, 403 tops, therefore, the defect concentration of the aluminum indium nitride gallium of first intermediary layer 402 of growing up after this second intermediary layer 403 can get to be improved, and makes to continue crystal layer with nitride 404 that first intermediary layer 402 of top layer grows up and obtain less defects density.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is used for the present invention is done any pro forma restriction; thereby, all have in that identical invention spirit is following do relevant any modification of the present invention or change, all be included in the category that the invention is intended to protect.
Claims (28)
1. nitride stacked crystal layer structure, it comprises:
One substrate is as base material;
One first intermediary layer, the aluminum indium nitride gallium (Al of storehouse suitable thickness on this base material
1-x-yGa
xIn
yN) material forms, its x 〉=0, y 〉=0,1 〉=x+y 〉=0;
One second intermediary layer, the silicon nitride (Si of storehouse suitable thickness on this first resilient coating
xN
y) material forms; And
The mononitride epitaxial layer, storehouse nitride material forms on this second resilient coating;
Wherein, this second intermediary layer make the crystal layer with nitride of follow-up growth to extend upward from the first exposed intermediary layer, and side direction is developed to this second intermediary layer top in order to form the shielding (mask) of clustering (cluster) on this first intermediary layer surface.
2. nitride stacked crystal layer structure as claimed in claim 1, wherein, set up several layers first intermediary layers and several layers second intermediary layers, and each layer first intermediary layer and each layer second intermediary layer repeat storehouse in regular turn, and the mutual storehouse periodic structure of formation multilayer first intermediary layer and second intermediary layer, make its top form one second intermediary layer, and on this second intermediary layer, form this crystal layer with nitride.
3. nitride stacked crystal layer structure as claimed in claim 1, wherein, this second intermediary layer can be to substitute to be magnesium nitride (Mg
xN
y) material forms.
4. nitride stacked crystal layer structure as claimed in claim 1, wherein, the thickness of this first intermediary layer is 5～10 dusts.
5. crystal layer with nitride as claimed in claim 1, wherein, the thickness of this second intermediary layer is 5～100 dusts.
6. crystal layer with nitride manufacture method, its step comprises:
(a) by crystal technique of heap of stone, use suitable growth temperature, forming material on this substrate is aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN), its x 〉=0, y 〉=0,1 〉=x+y 〉=0, and first intermediary layer of suitable thickness;
(b) by crystal technique of heap of stone, use suitable growth temperature, forming material on this first intermediary layer is silicon nitride (Si
xN
y), and second intermediary layer of suitable thickness;
(c) by crystal technique of heap of stone, use suitable growth temperature, forming material on this second intermediary layer is crystal layer with nitride.
7. as crystal layer with nitride manufacture method as described in the claim 6, wherein, after second intermediary layer forms, increase by a step again, it uses suitable growth temperature for by crystal technique of heap of stone, and the formation material is aluminum indium nitride gallium (Al on this second intermediary layer
1-x-yGa
xIn
yN), and another first intermediary layer of suitable thickness, then first intermediary layer in the top forms another second intermediary layer again, and repeats this two step in regular turn, and is staggered to form this first intermediary layer and second intermediary layer, makes that top layer is one second intermediary layer; On second intermediary layer of top layer, carry out at last the growth of crystal layer with nitride again.
8. as crystal layer with nitride manufacture method as described in the claim 6, wherein, this second intermediary layer can form the shielding (mask) of clustering (cluster) in this first intermediary layer surface, make the crystal layer with nitride of follow-up growth upwards to grow up from exposed preceding one deck first resilient coating, and side direction is developed to this second resilient coating top, makes the crystal layer with nitride of growing up after this second intermediary layer can obtain less defects density.
9. as crystal layer with nitride manufacture method as described in the claim 6, wherein, the growth temperature of this first intermediary layer is 200～1000 ℃.
10. as crystal layer with nitride manufacture method as described in the claim 6, wherein, the growth temperature of this second intermediary layer is 200～1000 ℃.
11. as crystal layer with nitride manufacture method as described in the claim 6, wherein, the growth temperature of this crystal layer with nitride is 700～1100 ℃.
12. as crystal layer with nitride manufacture method as described in the claim 6, wherein, this second intermediary layer can be to substitute to be magnesium nitride (Mg
xN
y) material forms.
13. as crystal layer with nitride manufacture method as described in the claim 6, wherein, the formation thickness of this first intermediary layer is 5～10 dusts.
14. as crystal layer with nitride manufacture method as described in the claim 6, wherein, it is 5～100 dusts that this second intermediary layer forms thickness.
15. a nitride stacked crystal layer structure, it comprises:
One substrate is as base material;
One first intermediary layer, the aluminum indium nitride gallium (Al of storehouse suitable thickness on this base material
1-x-yGa
xIn
yN) material forms, its x 〉=0, y 〉=0,1 〉=x+y 〉=0;
At least one second intermediary layer, the silicon nitride (Si of storehouse suitable thickness on this first intermediary layer
xN
y) material forms;
Another first intermediary layer is that the aluminum indium nitride gallium material with storehouse suitable thickness on this second intermediary layer is formed; And
The mononitride epitaxial layer, storehouse nitride material forms on first intermediary layer of top layer;
Wherein, this second intermediary layer is in order to form the shielding (mask) of clustering (cluster) on this first intermediary layer surface, make another first intermediary layer of follow-up growth to extend upward, and side direction is developed to this second intermediary layer top from exposed preceding one deck first intermediary layer.
16. nitride stacked crystal layer structure as claimed in claim 15, wherein, set up several layers first intermediary layers and several layers second intermediary layers, and each layer first intermediary layer and each layer second intermediary layer repeat storehouse in regular turn, and the mutual storehouse periodic structure of formation multilayer first intermediary layer and second intermediary layer, make its top form one first intermediary layer, and on this first intermediary layer, form this crystal layer with nitride.
17. nitride stacked crystal layer structure as claimed in claim 15, wherein, this second intermediary layer can be to substitute to be magnesium nitride (Mg
xN
y) material forms.
18. nitride stacked crystal layer structure as claimed in claim 15, wherein, the thickness of this first intermediary layer is 5～10 dusts.
19. crystal layer with nitride as claimed in claim 15, wherein, the thickness of this second intermediary layer is 5～100 dusts.
20. a crystal layer with nitride manufacture method, its step comprises:
(a) by crystal technique of heap of stone, use suitable growth temperature, forming material on this substrate is aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN), its x 〉=0, y 〉=0,1 〉=x+y 〉=0, and first intermediary layer of suitable thickness;
(b) by crystal technique of heap of stone, use suitable growth temperature, forming material on this first intermediary layer is silicon nitride (Si
xN
y), and suitable thickness second intermediary layer;
(c) by crystal technique of heap of stone, use suitable growth temperature, on second intermediary layer that previous step forms, forming material again is aluminum indium nitride gallium (Al
1-x-yGa
xIn
yAnd another first intermediary layer of suitable thickness N);
(d) by crystal technique of heap of stone, use suitable growth temperature, on first intermediary layer that previous step forms, forming material again is crystal layer with nitride.
21. as crystal layer with nitride manufacture method as described in the claim 20, wherein, after first intermediary layer of top layer formed, staggered in regular turn again the overlapping formed this second intermediary layer and first intermediary layer, made that top layer is one first intermediary layer; On first intermediary layer of top layer, carry out at last the growth of crystal layer with nitride again.
22. as crystal layer with nitride manufacture method as described in the claim 6, wherein, this second intermediary layer can form the shielding (mask) of clustering (cluster) in this first intermediary layer surface, make another first intermediary layer of follow-up growth upwards to grow up from exposed preceding one deck first intermediary layer, and side direction is developed to this second intermediary layer top, make the defect concentration of aluminum indium nitride gallium of first intermediary layer of growing up after this second intermediary layer to get and improve, and first intermediary layer of the top layer that the continues crystal layer with nitride of growing up can obtain and obtains less defects density.
23. as crystal layer with nitride manufacture method as described in the claim 20, wherein, the growth temperature of this first intermediary layer is 200～1000 ℃.
24. as crystal layer with nitride manufacture method as described in the claim 20, wherein, the growth temperature of this second intermediary layer is 200～1000 ℃.
25. as crystal layer with nitride manufacture method as described in the claim 20, wherein, the growth temperature of this crystal layer with nitride is 700～1100 ℃.
26. as crystal layer with nitride manufacture method as described in the claim 20, wherein, this second intermediary layer can be to substitute to be magnesium nitride (Mg
xN
y) material forms.
27. as crystal layer with nitride manufacture method as described in the claim 20, wherein, the formation thickness of this first intermediary layer is 5～10 dusts.
28. as crystal layer with nitride manufacture method as described in the claim 20, wherein, it is 5～100 dusts that this second intermediary layer forms thickness.
Priority Applications (1)
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|---|---|---|---|
| CNB2004100739293A CN100444319C (en) | 2004-09-06 | 2004-09-06 | Production of crystal layer with nitride and its structure |
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|---|---|---|---|
| CNB2004100739293A CN100444319C (en) | 2004-09-06 | 2004-09-06 | Production of crystal layer with nitride and its structure |
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| CN100444319C CN100444319C (en) | 2008-12-17 |
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| CA2311132C (en) * | 1997-10-30 | 2004-12-07 | Sumitomo Electric Industries, Ltd. | Gan single crystalline substrate and method of producing the same |
| JP4385504B2 (en) * | 2000-07-13 | 2009-12-16 | 日亜化学工業株式会社 | Nitride semiconductor substrate and manufacturing method thereof |
| CN1227718C (en) * | 2003-02-18 | 2005-11-16 | 华南师范大学 | Method for making gallium nitride crystal |
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Effective date of registration: 20161026 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Taiwan Taoyuan County Patentee before: Formosa Epitaxy Incorporation |