CN1227718C - Method for making gallium nitride crystal - Google Patents
Method for making gallium nitride crystal Download PDFInfo
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- CN1227718C CN1227718C CN 03113769 CN03113769A CN1227718C CN 1227718 C CN1227718 C CN 1227718C CN 03113769 CN03113769 CN 03113769 CN 03113769 A CN03113769 A CN 03113769A CN 1227718 C CN1227718 C CN 1227718C
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- gallium nitride
- silicon
- nitride
- substrate
- gallium
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Abstract
The present invention relates to a method for making semiconductor device material, more specifically a method for making gallium nitride crystals. The present invention comprises the following steps: (1), gallium nitride or aluminium nitride extends and grows on a substrate; (2), crystal granules of silicon or silicon carbide or silicon nitride or silicon oxide are deposited thermally on the surface of the gallium nitride; (3), the gallium nitride continuously extends and grows; for example, the structures of photoelectrons or electronic devices of non mixed or mixed gallium nitride films D or LED or LD or HEMT, etc. grow; the substrate can be sapphire or the silicon carbide or silicon or gallium arsenide or zinc oxide or magnesium oxide or LiAlO#-(2) or LiGaO#-(2). The present invention can effectively reduce malposition and can solve the mismatching problem of the substrate and an extension layer.
Description
Technical field
The present invention relates to the manufacture method of semiconductor device material, is the manufacture method of gallium nitride or aluminum nitride crystal more accurately.
Background technology
Heterojunction semiconductor is the primary structure of present semiconductor device, as LED, LD, HEMT or the like, and the complete at present heterostructure that adopts.And have only lattice match or lattice constant identical materials epitaxial growth to form heterojunction, the requirement of lattice match be the difference of lattice constant ten thousand/about.In III, V family semi-conducting material, be the very perfectly epitaxial loayer that the device of substrate can obtain lattice match by extensional mode with GaAs, InP.But concerning gallium nitride,, adopt Si, sapphire Al usually outward because large-sized gallium nitride single crystal body is difficult to manufacturing, thereby carries out gallium nitride material and delay time
2O
3Deng the material that is easy to make the large tracts of land substrate.And sapphire, Si etc. all have bigger mismatch with gallium nitride material; Have 14% mismatch as sapphire and gallium nitride, the mismatch of Si is bigger.The dislocation density of the gallium nitride of growing on this kind substrate is up to (10
8-10
10Cm
-2), make crystal mass bad.
Existing nitride epitaxial technology mainly adopts the lateral growth technology of nitride.For example cover a part of nitride surface, carry out photoetching then, form window, carry out secondary epitaxy, the nitride surface growth that the nitride of new extension mainly exposes after photoetching at the window place with silicon dioxide.This method program is complicated, is difficult for industrialization.
Summary of the invention
The objective of the invention is to problem, the manufacture method of a kind of gallium nitride or aluminum nitride crystal is provided, effectively reduce dislocation, solve substrate and epitaxial loayer mismatch problems, be convenient to realize industrialization at the prior art existence.
The manufacture method of gallium nitride of the present invention or aluminum nitride crystal may further comprise the steps:
(1) epitaxial growth of gallium nitride or aluminium nitride on substrate;
(2) at 400 ℃ of-1100 ℃ of following feeding silane, conveying capacity is from 10
-7Mol/min--10
-5Mol/min, the reaction time, at the crystalline particle of gallium nitride or aln surface heat deposition formation silicon, the ion that injects carbon, nitrogen or oxygen in the crystalline particle of silicon formed carborundum, silicon nitride or silica from 2 seconds to 9 minutes;
(3) continuous epitaxial growth of gallium nitride or aluminium nitride; Described substrate can be sapphire, carborundum, silicon, GaAs, zinc oxide, magnesium oxide, LiAlO
2, or LiGaO
2
In (2) step, implantation dosage is 10 in the crystalline particle of silicon
17Cm
-2Nitrogen or oxonium ion, be heated to 1000 ℃, generate silicon nitride or silica.
In (2) step, be placed on hydro carbons atmosphere with 700 ℃ of-900 ℃ of carbonizations behind the crystalline particle of formation silicon, form carborundum.
(2) step formed carborundum, silicon nitride or silica, was particularly conducive to and carried out follow-up gallium nitride or aluminum nitride crystal lateral growth.
The present invention can realize by the general MOVCD method of prior art, MBE method, PECVD method.For example can adopt low pressure automatic control MOCVD growing system able to programme, as the turbine rotary disc MOCVD material growing system of U.S. EMCORE company or the MOCVD material growing system of Britain SWAN company, can be according to prior art according to the concrete designs material concrete parameter of growing.
After gallium nitride or aln surface were partly covered by other materials, the epitaxial growth of gallium nitride or aluminium nitride was in gallium nitride or the exposed the easiest growth in place of aluminium nitride; So, in epitaxial growth on the substrate behind gallium nitride or the aluminium nitride, again at the crystalline particle of this surface portion heat deposition silicon, make gallium nitride or aln surface partly be covered by the crystalline particle of silicon, proceed gallium nitride or aluminium nitride extension afterwards again, because the epitaxial growth of gallium nitride or aluminium nitride is in gallium nitride or the exposed the easiest growth in place of aluminium nitride, so, gallium nitride or aluminium nitride can be in place, the slit growths of silicon crystalline particle, after the growth of gallium nitride or aluminium nitride exceeded the silicon crystalline particle, gallium nitride or aluminium nitride will lateral growths, thereby cover silicon grain, generate a complete plane, effectively reduce the dislocation defects of gallium nitride or aluminium nitride material.
The prime raw material pyrolytic deposition of silicon such as silane is when defective surface, and the easiest fault location that occurs in of nucleation is because activation energy herein is lower.So the conveying capacity of control reaction temperature and silane is under the dynamics Controlling of fault location activation energy the deposition reaction of silicon, thereby makes the silicon nucleation mainly concentrate on fault location.When fault location is this have covered by the silicon crystallization than the position of high reaction activity after, reactivity can reduce, and the reaction activity gradient of film surface is reduced, and is beneficial to the growth of monocrystal thin films.
The present invention compared with prior art has following advantage:
1, by the crystallization of grown silicon on gallium nitride or aln layer, part covers the defective on gallium nitride or the aln layer, when making regrowth gallium nitride or aln layer, and the defective decreased number;
2,, can reduce in the growth of gallium nitride or aluminium nitride the defective that the mismatch owing to substrate and epitaxial loayer causes significantly by lateral growth;
3, method simple possible is saved production cost and time, enhances productivity;
4, need not to add new equipment, need not photoetching, adopt existing equipment to realize;
5, improve gallium nitride or aluminum nitride crystal quality.
Embodiment
Adopt the turbine rotary disc MOCVD material growing system of U.S. EMCORE company:
(1) epitaxial growth of gallium nitride on silicon carbide substrates;
(2) at 800 ℃ of following feeding silane, conveying capacity 10
-7Mol/min, in 40 seconds reaction time, the surface forms the crystallization of part bare silicon; Be placed on hydro carbons atmosphere with 700 ℃ of carbonizations, make the silicon crystallization form carborundum;
(3) continue epitaxial growth of gallium nitride;
Also can proceed the growth manufacturing of device if necessary.
Claims (3)
1, the manufacture method of a kind of gallium nitride or aluminium nitride crystallization is characterized in that may further comprise the steps:
(1) epitaxial growth of gallium nitride or aluminium nitride on substrate;
(2) at 400 ℃ of-1100 ℃ of following feeding silane, conveying capacity is from 10
-7Mol/min--10
-5Mol/min, the reaction time, at the crystalline particle of gallium nitride or aln surface heat deposition formation silicon, the ion that injects carbon, nitrogen or oxygen in the crystalline particle of silicon formed carborundum, silicon nitride or silica from 2 seconds to 9 minutes;
(3) continue epitaxial growth of gallium nitride or aluminium nitride;
Described substrate is sapphire, carborundum, silicon, GaAs, zinc oxide, magnesium oxide, LiAlO
2, or LiGaO
2
2, the manufacture method of gallium nitride according to claim 1 or aluminium nitride crystallization is characterized in that implantation dosage is 10 in the crystalline particle of silicon in (2) step
17Cm
-2Nitrogen or oxonium ion, be heated to 1000 ℃, generate silicon nitride or silica.
3, the manufacture method of gallium nitride according to claim 1 or aluminium nitride crystallization is characterized in that being placed on hydro carbons atmosphere with 700 ℃ of-900 ℃ of carbonizations behind the crystalline particle of formation silicon in (2) step, forms carborundum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03113769 CN1227718C (en) | 2003-02-18 | 2003-02-18 | Method for making gallium nitride crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03113769 CN1227718C (en) | 2003-02-18 | 2003-02-18 | Method for making gallium nitride crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1434482A CN1434482A (en) | 2003-08-06 |
| CN1227718C true CN1227718C (en) | 2005-11-16 |
Family
ID=27634196
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03113769 Expired - Fee Related CN1227718C (en) | 2003-02-18 | 2003-02-18 | Method for making gallium nitride crystal |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329955C (en) * | 2004-07-21 | 2007-08-01 | 南京大学 | Method of preparing high quality non-polar GaN self-support substrate |
| CN100396816C (en) * | 2004-07-30 | 2008-06-25 | 中国科学院上海微系统与信息技术研究所 | Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy |
| CN100444319C (en) * | 2004-09-06 | 2008-12-17 | 璨圆光电股份有限公司 | Production of crystal layer with nitride and its structure |
| CN100434573C (en) * | 2006-04-03 | 2008-11-19 | 深圳大学 | Method for developing aluminum nitride crystal in large size through flow of plasma flame |
| CN101302648B (en) * | 2008-01-28 | 2010-06-16 | 中国电子科技集团公司第五十五研究所 | Gallium nitride thin film epitaxial growth structure and method |
| US8597961B2 (en) | 2009-10-20 | 2013-12-03 | Walsin Lihwa Corporation | Method for improving internal quantum efficiency of group-III nitride-based light emitting device |
| CN102097557B (en) * | 2009-12-15 | 2014-03-12 | 华新丽华股份有限公司 | Method and device for improving internal quantum efficiency of third group nitride-based luminous device |
| CN102409406A (en) * | 2011-10-28 | 2012-04-11 | 中国科学院半导体研究所 | Growing method for low-dislocation gallium nitride |
| CN102956772A (en) * | 2012-10-26 | 2013-03-06 | 江苏威纳德照明科技有限公司 | Luminescent device comprising SiC combined substrate |
| CN112864001A (en) * | 2020-12-31 | 2021-05-28 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN113161225B (en) * | 2021-01-14 | 2024-02-06 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
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2003
- 2003-02-18 CN CN 03113769 patent/CN1227718C/en not_active Expired - Fee Related
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