CN100444319C - Production of crystal layer with nitride and its structure - Google Patents
Production of crystal layer with nitride and its structure Download PDFInfo
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- CN100444319C CN100444319C CNB2004100739293A CN200410073929A CN100444319C CN 100444319 C CN100444319 C CN 100444319C CN B2004100739293 A CNB2004100739293 A CN B2004100739293A CN 200410073929 A CN200410073929 A CN 200410073929A CN 100444319 C CN100444319 C CN 100444319C
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Abstract
The present invention relates to the production method and a structure of a nitride crystal layer. The structure formed in the production process comprises a basal plate used as a substrate, at least one first intermediate layer formed by stacking the material of aluminium-indium-gallium nitride (Al1-x-yGaxInyN) on the substrate, at least one second intermediate layer formed by stacking the material of silicon nitride (SixNy) or the magnesium nitride (MgxNy) on the first intermediate layer, and a nitride crystal layer formed by stacking the material of nitride on the highest first intermediate layer or the second intermediate layer, wherein a following crystal layer is formed on the second intermediate layer to carry out the shield of the crystal growth. Consequently, the number of the lattice defects of the following crystal layer can be reduced sufficiently to improve the quality of the crystal layer.
Description
Technical field
The present invention is about a kind of nitride epitaxial layer manufacturing method thereof and structure thereof, and the structure and the processing procedure thereof of special intermediary layer particularly is provided.
Background technology
Traditional gallium nitride (GaN) epitaxial loayer, be to go up in a substrate (substrate) to form a resilient coating (buffer layer), be to form nitride epitaxial layer on this resilient coating, wherein, generally the resilient coating of this class is the Al that adopts a kind of low temperature (200～900 ℃)
xGa
1-xThe N or the In of low temperature
xGa
1-xThe N material deposits and forms, and then the gallium nitride of growth high temperature.Yet,, make the longer gallium nitride defect concentration of the one-tenth that utilizes this low temperature buffer layer up to 10 because the lattice constant difference of the lattice constant of gallium nitride and substrate is excessive
10/ cm
3More than.Such light emitting diode construction that gallium nitride material constituted can make assembly ESD bear brownout, causes its life-span to shorten, and and causes its component characteristic variation.
Therefore, in order to overcome above-mentioned defective, the disappearance that the present invention is based on existing nitride epitaxial layer is invented.
Summary of the invention
About the present invention is a kind of nitride epitaxial layer manufacturing method thereof and structure thereof, with restriction and the disappearance in one of reality solution or even several aforementioned related art.
A kind of nitride epitaxial layer manufacturing method thereof of the present invention and structure main purpose thereof are to improve the intermediary layer (intermidium layer) structure and the processing procedure thereof that provide suitable the defect concentration of nitride epitaxial layer, even can reduce defect concentration to 10
10/ cm
3Below.For achieving the above object, the invention provides a kind of nitride epitaxial layer manufacturing method thereof and structure thereof, it is mainly on a substrate, by epitaxy technology growth aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN) first intermediary layer and silicon nitride (Si
xN
y) or magnesium nitride (Mg
xN
y) formed second intermediary layer of material, in order to intermediary layer as the depositing nitride epitaxial loayer.
Based on aforementioned nitride epitaxial layer manufacturing method thereof of the present invention and structure thereof, effect that it can reach and effect, this is because silicon nitride or magnesium nitride can form the mask (mask) of clustering (cluster) on aluminum indium nitride gallium surface, make ensuing aluminum indium nitride gallium to grow up at silicon nitride or above the magnesium nitride, can be that the mask of these clusterings is crossed in the side direction growth on the contrary by the aluminum indium nitride gallium on next door, form and grow more low-density nitride epitaxial layer, therefore, can improve the too much problem of nitride epitaxial layer manufacturing method thereof defect concentration of the follow-up institute of silicon nitride or magnesium nitride extension.
Purpose of the present invention and function will be more clear after cooperating following Reference numeral and being described further.
Description of drawings
Accompanying drawing is shown respectively forms the specific embodiment of assembly for providing as specifically presenting described in this specification, and explains that main purpose of the present invention is to promote understanding of the present invention.
Fig. 1 is shown to be the sectional schematic diagram of first kind of preferred embodiment of nitride epitaxial layer of the present invention.
Fig. 2 is shown to be the concrete implementation step flow chart of the nitride epitaxial layer of Fig. 1.
Fig. 3 is shown to be the sectional schematic diagram of second kind of preferred embodiment of nitride epitaxial layer of the present invention.
Fig. 4 is shown to be the sectional schematic diagram of the third preferred embodiment of nitride epitaxial layer of the present invention.
Fig. 5 is shown to be the concrete implementation step flow chart of the nitride epitaxial layer of Fig. 4.
Fig. 6 is shown to be the sectional schematic diagram of the 4th kind of preferred embodiment of nitride epitaxial layer of the present invention.
Embodiment
Below will cooperate appended Reference numeral to be described in further detail at preferred embodiment of the present invention.Some yardstick is understood the present invention so that clearer description to be provided to help those skilled in the art with the expression that other partly relevant scale ratio is exaggerated.
Fig. 1 is shown to be a kind of preferred embodiment of nitride epitaxial layer of the present invention, and Fig. 2 is shown to be the concrete implementation step flow chart of the nitride epitaxial layer of Fig. 1.Shown with reference to figure 1, its be on the substrate 101 in regular turn storehouse form the nitride that one first intermediary layer 102, one second intermediary layer 103 and mononitride epitaxial loayer 104 are constituted, and this second intermediary layer 103 is in order to form the mask (mask) of clustering (cluster) on these first intermediary layer, 102 surfaces, make the nitride epitaxial layer 104 of follow-up growth understand, and side direction is developed to this second intermediary layer, 103 tops by growth on the first exposed intermediary layer 102.Wherein, shown with reference to figure 2, step comprises: step 201, and by epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this substrate 101 is aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN), its x 〉=0, y 〉=0,1 〉=x+y 〉=0, and thickness is 5～10 dusts
First intermediary layer 102; Step 202, by epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this first intermediary layer 102 is silicon nitride (Si
xN
y), and thickness is second intermediary layer 103 of 5～100 dusts; Step 203, by epitaxy technology, using the growth temperature is 700～1100 ℃, forms nitride epitaxial layer 104 on this second intermediary layer 103.
Aforesaid second intermediary layer 103 can substitute and is magnesium nitride (Mg
xN
y) material forms.
In aforementioned nitride epitaxial layer structure of the present invention and processing procedure thereof, the silicon nitride of this second intermediary layer 103 or magnesium nitride, can form the mask of clustering in these first intermediary layer, 102 surfaces, make that the nitride epitaxial layer 104 of follow-up growth can be by growing up on the first exposed intermediary layer 102, and side direction is developed to this second intermediary layer, 103 tops, therefore, nitride epitaxial layer 104 defect concentrations of growing up after this second intermediary layer 103 can get and reduce.
Moreover Fig. 3 is shown to be second kind of preferred embodiment of nitride epitaxial layer of the present invention.In the shown step of earlier figures 2, after carrying out step 201 and step 202 in regular turn, increase by a step again for passing through epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this second intermediary layer 103 is the aluminum indium nitride gallium, and thickness is first intermediary layer 102 of 5～10 dusts, be to repeat on this first intermediary layer 102 another second intermediary layer 103 of storehouse, and this repeats for several times and interleaving stack forms this first intermediary layer (102) and second intermediary layer 103, at last on second intermediary layer 103 of top layer, carry out step 203 and form its nitride epitaxial layer 104.Therefore, shown with reference to figure 3, its nitride epitaxial layer structure is to repeat interleaving stack number layer first intermediary layer 102 and second intermediary layer 103 on the substrate 101, and the nitride epitaxial layer structure that storehouse mononitride epitaxial loayer 104 is constituted on second intermediary layer 103 of top, make deposition form the periodic structure person of multilayer first intermediary layer 102 and second intermediary layer, 103 interleaving stacks.
In second kind of preferred embodiment based on aforementioned nitride manufacture method of the present invention, the silicon nitride of this second intermediary layer 103 or magnesium nitride, can form the mask of clustering in each first intermediary layer, 102 surfaces, first intermediary layer 102 or the nitride epitaxial layer 104 that make follow-up growth, understand on first intermediary layer 102 that exposes by second intermediary layer, 103 belows and grow up, and side direction is developed to this second intermediary layer, 103 tops, therefore, the aluminum indium nitride gallium and nitride epitaxial layer 104 defect concentrations of first intermediary layer 102 of growing up after this second intermediary layer 103 can be improved.
Fig. 4 is shown to be the third preferred embodiment of nitride epitaxial layer of the present invention, and Fig. 5 is shown to be the concrete implementation step flow chart of the nitride epitaxial layer of Fig. 4.Shown with reference to figure 4, its be on the substrate 401 in regular turn storehouse form one first intermediary layer 402, one second intermediary layer 403, another first intermediary layer 402 and mononitride epitaxial loayer 404 and constitute, and this second intermediary layer 403 is in order to form the mask (mask) of clustering (cluster) on these first intermediary layer, 402 surfaces, make first intermediary layer 402 of follow-up growth to extend on the exposed region by preceding one deck first intermediary layer 402, and extend laterally to this second intermediary layer, 403 tops.Moreover first intermediary layer 402 of this top is in order to promote and follow-up nitride epitaxial layer 404 qualities.Wherein, shown with reference to figure 5, step comprises: step 501, and by epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this substrate 401 is the aluminum indium nitride gallium, and thickness is first intermediary layer 402 of 5～10 dusts; Step 502, by epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this first intermediary layer 402 is silicon nitride, and thickness is second intermediary layer 403 of 5～100 dusts; Step 503, by epitaxy technology, using the growth temperature is 200～1000 ℃, forming material on this second intermediary layer 403 is the aluminum indium nitride gallium, and thickness is another first intermediary layer 402 of 5～10 dusts; Step 504, by epitaxy technology, using the growth temperature is 700～1100 ℃, forming material on first intermediary layer 402 of top layer is nitride epitaxial layer 404.
Aforesaid second resilient coating 403 can be to substitute to be formed by the magnesium nitride material.
Moreover Fig. 6 is shown to be the 4th kind of preferred embodiment of nitride epitaxial layer of the present invention.In the shown step of earlier figures 5, after carrying out step 501, step 502 and step 503 in regular turn, staggered again repeating step 502 and step 503, and repetition in regular turn is staggered to form this second intermediary layer 403 and first intermediary layer 402 for several times, after making that top layer is one first intermediary layer 402, carry out step 504 again and form its nitride epitaxial layer 404.Therefore, shown with reference to figure 6, repeat interleaving stack number layer first intermediary layer 402 and second intermediary layer 403 on its nitride epitaxial series of strata one substrate 401, and storehouse mononitride epitaxial loayer 404 constitutes on first intermediary layer 402 of top, makes deposition form the periodic structure person of multilayer first intermediary layer 402 and second intermediary layer, 403 interleaving stacks.
In the 3rd or the 4th kind of preferred embodiment based on aforementioned nitride epitaxial layer manufacturing method thereof of the present invention, the silicon nitride of this second intermediary layer 403 or magnesium nitride, can form the mask of clustering in first intermediary layer, 402 surfaces of preceding one deck, first intermediary layer 402 that makes these second intermediary layer, 403 follow-up growth, understand on first intermediary layer 402 that exposes by second intermediary layer, 403 belows and grow up, and side direction is developed to this second intermediary layer, 403 tops, therefore, the defect concentration of the aluminum indium nitride gallium of first intermediary layer 402 of growing up after this second intermediary layer 403 can get to be improved, and makes to continue nitride epitaxial layer 404 that first intermediary layer 402 of top layer grows up and obtain less defects density.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is used for the present invention is done any pro forma restriction; thereby, all have in that identical invention spirit is following do relevant any modification of the present invention or change, all be included in the category that the invention is intended to protect.
Claims (10)
1. nitride epitaxial layer structure, it comprises:
One substrate is as base material;
One first intermediary layer, directly storehouse thickness is the aluminum indium nitride gallium Al of 5～10 dusts on this base material
1-x-yGa
xIn
yN forms, x 〉=0 wherein, y＞0,1 〉=x+y 〉=0;
One second intermediary layer, storehouse thickness is 5～100 dust silicon nitride Si on this first intermediary layer
xN
yOr magnesium nitride Mg
xN
yForm; And
The mononitride epitaxial loayer, the storehouse nitride forms on this second intermediary layer;
Wherein, this second intermediary layer make the nitride epitaxial layer of follow-up growth to extend upward from the first exposed intermediary layer, and side direction is developed to this second intermediary layer top in order to form the mask of clustering on this first intermediary layer surface.
2. nitride epitaxial layer structure as claimed in claim 1, wherein, set up a plurality of first intermediary layers and a plurality of second intermediary layer, and each layer first intermediary layer and each layer second intermediary layer repeat storehouse in regular turn, and the mutual storehouse periodic structure of formation multilayer first intermediary layer and second intermediary layer, make its top form one second intermediary layer, and on this second intermediary layer, form this nitride epitaxial layer.
3. nitride epitaxial layer manufacturing method thereof, its step comprises:
(a),, on this substrate, directly form aluminum indium nitride gallium Al at 200～1000 ℃ by epitaxy technology
1-x-yGa
xIn
yN, x 〉=0 wherein, y＞0,1 〉=x+y 〉=0, and thickness is first intermediary layer of 5～10 dusts;
(b),, on this first intermediary layer, form silicon nitride Si at 200～1000 ℃ by epitaxy technology
xN
yOr magnesium nitride Mg
xN
y, and thickness is second intermediary layer of 5～100 dusts;
(c) by epitaxy technology,, on this second intermediary layer, form nitride epitaxial layer at 700～1000 ℃.
4. as nitride epitaxial layer manufacturing method thereof as described in the claim 3, wherein, after second intermediary layer forms, increase by a step again, it at 200～1000 ℃, forms aluminum indium nitride gallium Al for by epitaxy technology on this second intermediary layer
1-x-yGa
xIn
yN, and thickness is another first intermediary layer of 5～10 dusts, then to form another thickness again be 5～100 dusts, second intermediary layers to another first intermediary layer in the top, and the step of repeated growth first intermediary layer and second intermediary layer in regular turn, and be staggered to form this first intermediary layer and second intermediary layer, make that top layer is one second intermediary layer; On second intermediary layer of top layer, carry out at last the growth of nitride epitaxial layer again.
5. as nitride epitaxial layer manufacturing method thereof as described in the claim 3, wherein, this second intermediary layer can form the mask of clustering in this first intermediary layer surface, make the nitride epitaxial layer of follow-up growth upwards to grow up from the first exposed intermediary layer, and side direction is developed to this second intermediary layer top.
6. nitride epitaxial layer structure, it comprises:
One substrate is as base material;
One first intermediary layer, directly storehouse thickness is the aluminum indium nitride gallium Al of 5～10 dusts on this base material
1-x-yGa
xIn
yN forms, x 〉=0 wherein, y＞0,1 〉=x+y 〉=0;
At least one second intermediary layer, storehouse thickness is the silicon nitride Si of 5～100 dusts on this first intermediary layer
xN
yOr magnesium nitride Mg
xN
yForm;
Another first intermediary layer is formed with the aluminum indium nitride gallium of storehouse thickness on this second intermediary layer by 5～10 dusts; And
The mononitride epitaxial loayer, storehouse thickness is formed by the nitride of 5～100 dusts on another first intermediary layer of top layer;
Wherein, this second intermediary layer make another first intermediary layer of follow-up growth to extend upward from exposed preceding one deck first intermediary layer, and side direction is developed to this second intermediary layer top in order to form the mask of clustering on this first intermediary layer surface.
7. nitride epitaxial layer structure as claimed in claim 6, wherein, set up a plurality of first intermediary layers and a plurality of second intermediary layer, and each layer first intermediary layer and each layer second intermediary layer repeat storehouse in regular turn, and the mutual storehouse periodic structure of formation multilayer first intermediary layer and second intermediary layer, make its top form one first intermediary layer, and on this first intermediary layer, form this nitride epitaxial layer.
8. nitride epitaxial layer manufacturing method thereof, its step comprises:
(a),, on this substrate, directly form aluminum indium nitride gallium Al at 200～1000 ℃ by epitaxy technology
1-x-yGa
xIn
yN, x 〉=0 wherein, y＞0,1 〉=x+y 〉=0, and thickness is first intermediary layer of 5～10 dusts;
(b),, on this first intermediary layer, form silicon nitride Si at 200～1000 ℃ by epitaxy technology
xN
yOr magnesium nitride Mg
xN
y, and thickness is second intermediary layer of 5～100 dusts;
(c),, on second intermediary layer that previous step forms, form aluminum indium nitride gallium Al again at 700～1000 ℃ by epitaxy technology
1-x-yGa
xIn
yN, and thickness is another first intermediary layer of 5～10 dusts;
(d) by epitaxy technology, use suitable growth temperature, on first intermediary layer that previous step forms, form nitride epitaxial layer again.
9. as nitride epitaxial layer manufacturing method thereof as described in the claim 8, wherein, after another first intermediary layer formed, staggered in regular turn again the overlapping formed this second intermediary layer and first intermediary layer, made that top layer is one first intermediary layer; The last growth of on first intermediary layer of top layer, carrying out nitride epitaxial layer again.
10. as nitride epitaxial layer manufacturing method thereof as described in the claim 8, wherein, this second intermediary layer can form the mask of clustering in this first intermediary layer surface, make another first intermediary layer of follow-up growth upwards to grow up, and side direction is developed to this second intermediary layer top from exposed preceding one deck first intermediary layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1041610A1 (en) * | 1997-10-30 | 2000-10-04 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
| JP2002033282A (en) * | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | Nitride semiconductor substrate and manufacturing method thereof |
| CN1434482A (en) * | 2003-02-18 | 2003-08-06 | 华南师范大学 | Method for making gallium nitride crystal |
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- 2004-09-06 CN CNB2004100739293A patent/CN100444319C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1041610A1 (en) * | 1997-10-30 | 2000-10-04 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
| JP2002033282A (en) * | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | Nitride semiconductor substrate and manufacturing method thereof |
| CN1434482A (en) * | 2003-02-18 | 2003-08-06 | 华南师范大学 | Method for making gallium nitride crystal |
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Effective date of registration: 20161026 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Taiwan Taoyuan County Patentee before: Formosa Epitaxy Incorporation |