CN101267008A - Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method - Google Patents
Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method Download PDFInfo
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- CN101267008A CN101267008A CNA2007100875075A CN200710087507A CN101267008A CN 101267008 A CN101267008 A CN 101267008A CN A2007100875075 A CNA2007100875075 A CN A2007100875075A CN 200710087507 A CN200710087507 A CN 200710087507A CN 101267008 A CN101267008 A CN 101267008A
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Abstract
A photoelectric semiconductor component with three families nitrogen compound semiconductor buffer layers is provided, which comprises a substrate, and at least two In<x>Ga<1-x>N layers and at least two In<y>Ga<1-y>N layers which superimposes on the substrate alternately, wherein the x not equals to the y. A luminescent epitaxial structure is located on the surface of the In<y>Ga<1-y>N layer which is at the upper layer. A superlattice buffer layer is formed by the In<x>Ga<1-x>N layer which is between the substrate and the luminescent epitaxial structure and the In<y>Ga<1-y>N layer to reduce stress.
Description
Technical field
The present invention relates to photoelectrical semiconductor component and its manufacture method of a kind of tool III-family nitrogen compound semiconductor resilient coating, specifically, relating to a kind of is the photoelectrical semiconductor component of resilient coating with the III-family nitrogen compound semiconductor.
Background technology
Along with light-emitting diode component is widely used in different product, the material of making blue light-emitting diode has in recent years become the important research and development object of current photoelectric semiconductor material.The material of blue light-emitting diode has zinc selenide (ZnSe), carborundum (SiC) and InGaN materials such as (InGaN) at present, and these materials all are the semi-conducting materials of wide energy gap (band gap), and energy gap is greatly more than 2.6eV.Because gallium nitride series is the luminescent material of direct gap (direct gap), therefore can produces the illuminating ray of high brightness, and long advantage of life-span more be arranged compared to the zinc selenide that is all direct gap.
At the R﹠D direction of group III nitride compound or gallium nitride, be to focus on how to remove to form high-quality gallium nitride film in early days.But owing to lack and the substrate material of gallium nitride in lattice constant (lattice constant) and coefficient of expansion coupling, and must under excessive temperature, form film, so the high-quality gallium nitride of will growing up under this type of condition is very difficult.
People such as S.Yoshida are base material in nineteen eighty-three with sapphire (sapphire), are resilient coating with high temperature growth one deck aluminium nitride (AlN) earlier, follow gallium nitride growth rete in the above, so just obtain mass ratio crystal preferably.People such as I.Akasa and H.Amano at first utilized organic metal vapour deposition process (MOCVD) to come the gallium nitride growth rete in 1986 afterwards, and it is to grow up an aluminium nitride at low temperatures as resilient coating, then equally at high temperature formed the gallium nitride rete.
The same year, the Shuji Nakamura of the Ri Ya chemical company (Nichia Chemical Industries) of Japan drops into the research of gallium nitride material, earlier with two streaming MOCVD reactor gallium nitride growth retes, and on gallium nitride crystal technique of heap of stone, two great changes have been done, wherein he to have given up with the calorize gallium be resilient coating, and use gallium nitride that low temperature grows up instead, and improve application at this point and be U.S. US 5 as resilient coating, 290, No. 393 patents.Fig. 1 is the generalized section of the light-emitting diode 10 of 5,290, No. 393 patents of U.S. US.On sapphire base material 11, form a Ga
xAl
xN (0＜x≤1) layer is as resilient coating 12, and formation temperature is lower than 900 ℃, and its thicknesses of layers is about 0.001 μ m to 0.5 μ m.On resilient coating 12, continue a brilliant Ga of heap of stone then
xAl
xN (0＜x≤1) layer is as the semiconductor layer 13 that produces light, and formation temperature is between 900 ℃ to 1150 ℃.
Fig. 2 is the generalized section of the light-emitting diode 20 of 6,847, No. 046 patent of U.S. US.On sapphire base material 21, form a SiN/Al
1-x-yIn
xGa
yN superlattice (superlattice) layer continues to form a undoped gallium nitride (GaN) layer 23 then as resilient coating 22 on resilient coating 22.
Fig. 3 is the generalized section of the light-emitting diode 30 of 5,523, No. 589 patents of U.S. US.On the base material 32 of tool conductive silicon carbide, form an Al
xGa
1-xN or Al
1-x-yIn
xGa
yThe N layer continues to form heterostructure layer (lower heterostructure layer) 34 then as resilient coating 33 on resilient coating 33.Equally, N type electrode 31 is located at the bottom of base material 32.
Fig. 4 is the generalized section of the light-emitting diode 40 of 5,122, No. 845 patents of U.S. US.On sapphire base material 41, form an aluminium nitride (AlN) layer as resilient coating 42, on resilient coating 42, continue to form a n type gallium nitride (GaN) layer 43 then.
Aforementioned routine techniques all adopts the nitride that contains aluminium as resilient coating, because described class resilient coating hardness height, therefore makes lattice between substrate and the luminous epitaxial structure not match and can't adjust.Cumulative stress between substrate and the luminous epitaxial structure can be difficult for eliminating because of resilient coating hardness is high, even can cause epitaxial structure to produce crack performance.In addition, lattice does not match and stress can't discharge and causes epitaxial structure that dislocation defects is arranged, and promptly epitaxial structure can be therefore and quality deterioration.
In sum, be badly in need of a kind of stay-in-grade photoelectrical semiconductor component of guaranteeing on the market, the feasible various shortcomings that can improve above-mentioned routine techniques.
Summary of the invention
Main purpose of the present invention is to provide photoelectrical semiconductor component and its manufacture method of a kind of tool III-family nitrogen compound semiconductor resilient coating, it is a resilient coating between substrate and the luminous epitaxial structure with the lower III-family nitrogen compound semiconductor of hardness, can effectively discharge the stress of accumulation and avoids the generation of crack performance.
Another object of the present invention is to provide a kind of photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating, because of the cumulative stress of minimizing epitaxial layer, thus can reduce the density of dislocation defects in the epitaxial structure, thus the quality of photoelectrical semiconductor component improved.
For reaching above-mentioned purpose, the present invention discloses a kind of photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating, and it comprises a substrate, and at least two In
xGa
1-xN layer and at least two In
yGa
1-yThe N layer is staggered repeatedly to be placed on the described substrate and forms resilient coating, and wherein x is not equal to y, and 0＜x, y≤1.One luminous epitaxial structure is located at the described In that is positioned at the upper strata
yGa
1-yThe N laminar surface, the described In between described substrate and described luminous epitaxial structure
xGa
1-xN layer and described In
yGa
1-yThe N layer forms superlattice stratum nucleares (superlattice nucleation layer) to reduce stress.
Described In
xGa
1-xN layer and described In
yGa
1-yThe number of plies of N layer preferably respectively between 2 to 5, described laminated be the superlattice stratum nucleares, and stack thickness is that 0.001 μ m is to 0.5 μ m.
The material of described base material comprises sapphire, carborundum (SiC), silicon, zinc oxide (ZnO), magnesium oxide (MgO) and GaAs (GaAs).
Described photoelectrical semiconductor component is a light-emitting diode, a laser diode or an optical sensor.
The present invention also discloses a kind of manufacture method of photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating.At first, carry out the purified treatment of substrate surface.Feed the organic metal precursor (precursor) of ammonia and group iii elements again, thereby grow up a plurality of In
xGa
1-xN/In
yGa
1-yN (x ≠ y) laminated.If repeat to form In
xGa
1-xN/In
yGa
1-y(x ≠ y) laminated number equals set point to N, and the luminous epitaxial structure of growing up so again is at described a plurality of In
xGa
1-xN/In
yGa
1-yN (on x ≠ y) is laminated, otherwise continues to repeat to produce described In
xGa
1-xN/In
yGa
1-yN (the step that x ≠ y) is laminated.
The organic metal precursor of described group iii elements is the organo-metallic compound of gallium or indium, for example: trimethyl gallium, triethyl-gallium, trimethyl indium and triethylindium.
The flow of the organic metal precursor of described group iii elements preferably is controlled between 50～1000 cubic centimetres of the per minutes.
Description of drawings
Fig. 1 is the generalized section of 5,290, No. 393 disclosed light-emitting diodes 10 of patent of U.S. US;
Fig. 2 is the generalized section of 6,847, No. 046 disclosed light-emitting diode 20 of patent of U.S. US;
Fig. 3 is the generalized section of 5,523, No. 589 disclosed light-emitting diodes 30 of patent of U.S. US;
Fig. 4 is the generalized section of 5,122, No. 845 disclosed light-emitting diodes 30 of patent of U.S. US;
Fig. 5 is the structure chart of the photoelectrical semiconductor component of tool P type III-family nitrogen compound semiconductor of the present invention; And
Fig. 6 is the manufacturing flow chart of the photoelectrical semiconductor component of tool P type III-family nitrogen compound semiconductor of the present invention.
Embodiment
Fig. 5 is the structure chart of the photoelectrical semiconductor component of tool P type III-family nitrogen compound semiconductor of the present invention.In general, making this photoelectrical semiconductor component 50 is that a base material 51 is provided earlier, for example: sapphire (that is aluminum oxide Al
2O
3), carborundum (SiC), silicon, zinc oxide (ZnO), magnesium oxide (MgO) and GaAs (GaAs) etc., and on described base material 51, form different material layers.Because base material 51 does not match with the lattice constant of group III nitride compound, therefore need on base material 51, form by at least two In earlier
xGa
1-xN layer 521 and at least two In
yGa
1-yN layer 522 a staggered resilient coating 52 repeatedly.The N type semiconductor material layer 53 of growing up on resilient coating 52 then, it can utilize crystal type of heap of stone to produce the n type gallium nitride doped silicon film with as N type semiconductor material layer 53.The active layers 54 of growth multi-layer quantum well structure on N type semiconductor material layer 53 then, for example: five layers of InGaN (InGaN)/gallium nitride (GaN) multi-layer quantum well structure, described active layers 54 are the light-emitting diode 50 main parts that produce light.Form at least one P type semiconductor material layer 55 at last on active layers 54, described P type semiconductor material layer 55 can add magnesium-doped different structures such as gallium nitride for magnesium-doped gallium nitride, magnesium-doped gallium nitride and the laminated or magnesium-doped aluminium gallium nitride alloy and gallium nitride superlattice (Superlattice) structure of InGaN.In addition, on N type semiconductor material layer 53 and P type semiconductor material layer 55, form the pattern of N type electrode 56 and P type electrode 57 respectively, can connect outside electric power by this.
Described resilient coating 52 is that a kind of hardness ratio routine contains the low superlattice stratum nucleare of aluminium element resilient coating, can effectively reduce the stress of accumulating between substrate and the luminous epitaxial structure, and its total thicknesses of layers is about 0.001 μ m to 0.5 μ m.Because of the cumulative stress of minimizing lattice, thus the density of dislocation defects in the epitaxial layer can be reduced, thus improve the quality of photoelectrical semiconductor component 50.And x ≠ y in the resilient coating 52, and 0＜x, y≤1, wherein with 0＜x, y≤0.5th, preferred.
Fig. 6 is the manufacturing flow chart of the photoelectrical semiconductor component of tool P type III-family nitrogen compound semiconductor of the present invention.Shown in step 61, substrate surface is cleaned, for example: in being full of the environment of hydrogen, carry out heat and clean (thermal cleaning) with 1200 ℃ of temperature.Feed the organic metal precursor (precursor) of ammonia and group iii elements again, the organo-metallic compound that can adopt gallium or indium is as described organic metal precursor, for example: trimethyl gallium (trimethylgalliaum; TMGa), triethyl-gallium and trimethyl indium (trimethylindium; TMIn) and triethylindium etc., thus grow up a plurality of In
xGa
1-xN/In
yGa
1-y(x ≠ y) laminated is shown in step 62 for N.The flow of trimethyl gallium and trimethyl indium can be controlled at 50～1000 cubic centimetres of per minutes (standard cubiccentimeter per minute respectively; SCCM) between, and the flow of ammonia can be controlled in 0.5～200 liter of per minute (standardcubic liter per minute; SCLM).Shown in step 63, if repeat to form In
xGa
1-xN/In
yGa
1-y(the laminated total number of x ≠ y) equals set point, and (2 to 5 laminated is preferred to N, i.e. In
xGa
1-xN layer and In
yGa
1-yThe N layer is respectively 2 to 5 layers), so just according to the indication of step 64 at described a plurality of In
xGa
1-xN/In
yGa
1-yN (the luminous epitaxial structure of growing up again on x ≠ y) is laminated, otherwise continue to repeat to produce described In
xGa
1-xN/In
yGa
1-yN (the step 62 that x ≠ y) is laminated.
Application of the present invention is not limited to illustrated light-emitting diode, and relevant photoelectrical semiconductor component all can be claims to be contained, for example: laser diode (laser diode) and optical sensor (photo sensor) etc.
Technology contents of the present invention and technical characterstic disclose as above, yet the those skilled in the art still may be based on teaching of the present invention and announcement and done all replacement and modifications that does not break away from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to those disclosed embodiments, and should comprise various do not break away from replacement of the present invention and modifications, and contains for appended claims.
Claims (10)
1. the photoelectrical semiconductor component of a tool III-family nitrogen compound semiconductor resilient coating is characterized in that comprising:
One substrate;
One resilient coating, it comprises at least two In
xGa
1-xN layer and at least two In
yGa
1-yThe N layer is staggered repeatedly to be placed on the described substrate, and wherein x is not equal to y; With
One luminous epitaxial structure is located on the described resilient coating.
2. the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 1 is characterized in that 0＜x, y≤1.
3. the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 1 is characterized in that described In
xGa
1-xN layer and described In
yGa
1-yThe number of plies of N layer is respectively between 2 to 5.
4. the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 1 is characterized in that described In
xGa
1-xN layer and described In
yGa
1-yThe laminated of N layer is the superlattice stratum nucleares.
5. the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 1 is characterized in that the material of described base material comprises sapphire, carborundum (SiC), silicon, zinc oxide (ZnO), magnesium oxide (MgO) and GaAs (GaAs).
6. the manufacture method of the photoelectrical semiconductor component of a tool III-family nitrogen compound semiconductor resilient coating is characterized in that comprising the following step:
Carry out the purified treatment of a substrate surface;
Feed the organic metal precursor of ammonia and group iii elements, thereby it is a plurality of to grow up on described substrate surface
In
xGa
1-xN/In
yGa
1-yN is laminated, and wherein x is not equal to y; With
At described a plurality of In
xGa
1-xN/In
yGa
1-yThe laminated luminous epitaxial structure of growing up of going up of N.
7. the manufacture method of the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 6 is characterized in that 0＜x, y≤1.
8. the manufacture method of the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 6, the flow control of organic metal precursor that it is characterized in that described group iii elements is between 50～1000 cubic centimetres of per minutes.
9. the manufacture method of the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 6, the flow control that it is characterized in that described ammonia is between 0.5～200 liter of per minute.
10. the manufacture method of the photoelectrical semiconductor component of tool III-family nitrogen compound semiconductor resilient coating according to claim 6 is characterized in that described In
xGa
1-xN layer and described In
yGa
1-yThe number of plies of N layer is respectively 2 to 5.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100875075A CN101267008A (en) | 2007-03-16 | 2007-03-16 | Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100875075A CN101267008A (en) | 2007-03-16 | 2007-03-16 | Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method |
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|---|---|
| CN101267008A true CN101267008A (en) | 2008-09-17 |
Family
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214740A (en) * | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for improving antistatic capability of gallium nitride based light emitting diode |
| CN103972343A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting component |
| CN103972344A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Semiconductor structure |
| CN104701432A (en) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN-based LED epitaxial structure and preparation method thereof |
| CN105261681A (en) * | 2015-09-08 | 2016-01-20 | 安徽三安光电有限公司 | Semiconductor element and preparation method thereof |
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9859462B2 (en) | 2012-12-06 | 2018-01-02 | Genesis Photonics Inc. | Semiconductor structure |
| US10229977B2 (en) | 2016-09-19 | 2019-03-12 | Genesis Photonics Inc. | Nitrogen-containing semiconductor device |
| CN112117344A (en) * | 2020-09-23 | 2020-12-22 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN113013302A (en) * | 2021-02-26 | 2021-06-22 | 东莞市中麒光电技术有限公司 | Preparation method of InGaN-based red light LED chip structure |
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2007
- 2007-03-16 CN CNA2007100875075A patent/CN101267008A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214740A (en) * | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for improving antistatic capability of gallium nitride based light emitting diode |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9859462B2 (en) | 2012-12-06 | 2018-01-02 | Genesis Photonics Inc. | Semiconductor structure |
| CN103972343A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting component |
| CN103972344A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Semiconductor structure |
| CN104701432A (en) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN-based LED epitaxial structure and preparation method thereof |
| CN105261681A (en) * | 2015-09-08 | 2016-01-20 | 安徽三安光电有限公司 | Semiconductor element and preparation method thereof |
| CN105261681B (en) * | 2015-09-08 | 2019-02-22 | 安徽三安光电有限公司 | A kind of semiconductor element and preparation method thereof |
| US10229977B2 (en) | 2016-09-19 | 2019-03-12 | Genesis Photonics Inc. | Nitrogen-containing semiconductor device |
| CN112117344A (en) * | 2020-09-23 | 2020-12-22 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN112117344B (en) * | 2020-09-23 | 2022-05-31 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN113013302A (en) * | 2021-02-26 | 2021-06-22 | 东莞市中麒光电技术有限公司 | Preparation method of InGaN-based red light LED chip structure |
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