CN1731237A - The double edge angle reflection microprism array is realized the method for surface array semiconductor laser shaping - Google Patents
The double edge angle reflection microprism array is realized the method for surface array semiconductor laser shaping Download PDFInfo
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Abstract
Double edge angle reflection microprism array is realized the method for surface array semiconductor laser shaping, it is characterized in that: (1) makes full use of the gap between the LD bar of surface array semiconductor laser, the hot spot that slow axis is cut apart is filled wherein, reach the purpose in compression slow axis hot spot, filling bar gap; (2) adopt a pair of double edge angle reflection microprism array element to realize shaping feature, the effect of first prism array is that incident light is reset, and the effect of second prism array is to proofread and correct the direction of resetting light beam, makes it consistent; (3) two microprism array corresponding unit corner angle sizes are identical, and direction is opposite.Relating to the microprism array with this method compares with classic method and has simple in structure, compact, easy to adjust, deviation efficient height, is not subjected to that prism material and laser wavelength influence, advantage such as with low cost realizing the surface array semiconductor laser shaping.
Description
Affiliated technical field
The present invention relates to a kind of new method that adopts the double edge angle reflection microprism array to realize the surface array semiconductor laser beam shaping.
Background technology
(Laser Diode LD) has obtained important use at the aspects such as pumping, military affairs, printing and printing of medical treatment, materials processing, solid state laser and fiber laser to the high-power semiconductor laser of the fine output of magnetic tape trailer.Bar array semiconductor laser (LD bar) is made up of by a series of luminescence units of periodic arrangement horizontal direction, but be subjected to many-sided restrictions such as technology, cooling, shaping methods, bar array semiconductor laser can not do the unlimited length of horizontal direction, so bar array semiconductor laser generally is about 1cm at present, continuous power output generally is lower than 100W.In order to obtain to surpass 100W even last kilowatt continuous high power, people vertically pile up composition surface array semiconductor laser (LD stack) to bar array semiconductor laser.
The principal feature of semiconductor laser output beam be in the horizontal direction (custom is called " slow axis ") beam divergence angle little (about 8-10 degree, FWHM), luminous zone thick (the about 1cm of bar battle array); Vertical direction (custom is called " fast axle ") beam divergence angle big (about 36-40 degree, FWHM), the luminous zone approaches (about 1 μ m).It will be coupled into the multimode optical fiber of circle symmetry, beam shaping is necessary.
The high power aspect, the shaping methods of bar array semiconductor laser is a lot, comparatively practicality has ladder catoptron shaping (K.Du, M.Baumann, B.Ehlers, et al, " Fiber-coupling techniquewith micro step-mirrors for high-power diode-laser bars ", OSA TOPS, Vol.10,1997:390-393), the shaping of prism group catadioptric (Optical coupling system for ahigh-power diode-pumped solid state laser, U S Patent, 6,377,410,2002-04-23), microplate edge glass stack shaping (shaper of linear light beam, Chinese invention patent: ZL99124019,2000-05-1) etc.But above-mentioned the battle array shaping methods all can't directly apply to the face battle array.
Both at home and abroad about the report of surface array semiconductor laser shaping methods also only at nearest about 10 years.Summary is got up, and shaping methods mainly contains refractive, diffraction type and catadioptric mixed type.Refractive has several implementation methods again, method (" High-brightness high-power fibercoupled diode laser system for material processing and laser pumping " such as B.Faircloth, SPIE, Vol.4973,34-41 (2003)) needs much independently refracting prisms, these prisms need be placed on certain location and angle, so system architecture is quite complicated, also are difficult to regulate.The diffraction element shaping methods (" Use of diffractive opticstransformer preceded by a corrector lens in a high-power semiconductorlaser system " that people such as R.H.Rediker propose, SPIE, Vol.2131,301-307 (1994)) subject matter of Cun Zaiing is influenced by diffraction element diffraction efficiency and method for making and process equipment resolution, the efficient of system is not high, manufacturing process is loaded down with trivial details, bulky etc., so on practicality, also need energetically improvement.Folding, back mixing mould assembly shaping methods (" 2kW cw fiber-coupled diode laser system " that people such as F.Dorsch propose, SPIE, Vol.3889,45-53 (2000)) made full use of the ladder mirror approach of bar battle array shaping, but because increased the refracting prisms of three separation, the total system degree of freedom is more, regulates difficulty.F.Bachmann (" high power diode laser technology and applications ", SPIE, Vol.3888,394-403 (2000)) adopt refracting prisms heap row to realize beam shaping, this method number of optical elements is less, practical, but more shortcoming is arranged: (1) refracting prisms are little to the deviation angle of light, for little corner angle, system length must be enlarged and just the deviation position can be reached, enlarge corner angle reduction system length relatively, but mean increase prism difficulty of processing; (2) the refracting element deflection angle depends on the refractive index and the laser instrument excitation wavelength of prism material, must consider these factors in design and processing; (3) when corner angle are big, the deviation angle of refracting element no longer with the sexual intercourse of corner angle retention wire, but also relevant with incident angle, might enlarge the angle of divergence of incident beam, thereby need back group of wideer prism accept light; (4) refracting element needs two-sided plating anti-reflection film, increases cost.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, a kind of simple in structure, compact, easy to adjust, deviation efficient height is provided, is not subjected to that prism material and laser wavelength influence, advantage double edge angle reflection microprism array such as with low cost, realize that a kind of compact conformation, easy to adjust, shaping efficient height, double edge angle reflection microprism array with low cost realize the method for surface array semiconductor laser beam shaping.
Technical solution of the present invention is: the double edge angle reflection microprism array is realized the method for surface array semiconductor laser beam shaping, finishes by following steps:
(1) according to the gap between the bars of surface array semiconductor laser, the hot spot that slow axis is cut apart is filled wherein, reach the purpose in compression slow axis hot spot, filling bar gap;
(2) adopt a pair of double edge angle reflecting prism array element to realize shaping feature, the effect of first prism array is that incident light is reset, and the effect of second prism array is to proofread and correct the direction of resetting light beam, makes it consistent;
(3) two microprism array corresponding unit corner angle sizes are identical, and direction is opposite;
(4) according to the requirement of system to microprism array deviation light, calculate corner angle and the synthetic corner angle of each piece microprism at both direction, process the one dimension prism of these synthetic corner angle with the cold worked method of optics, cut into the double edge angle microprism that satisfies two direction corner angle by angle then;
(5) the double edge angle microprism that processes is formed two groups according to its function, glue together, plate reflectance coating respectively;
(6) the quasi-parallel light after double edge angle microprism array group is put into fast and slow axis collimating respectively, accurately adjusting position and angle add focus lamp behind the group prism of back, and the light beam coupling after the shaping is advanced optical fiber.
The present invention's advantage compared with prior art is as follows:
The method of double edge angle reflection microprism array realization surface array semiconductor laser beam shaping involved in the present invention does not still have relevant report at home and abroad.With external unique and the approaching refracting prisms array approach (F.Bachmann of the principle of the invention, " high power diode laser technology and applications ", SPIE, Vol.3888,394-403 (2000)) compare, advantage applies of the present invention exists:
1, if the corner angle of reflecting prism are α, the deviation angle is up to 2 α, approximately be refracting prisms (2-4) doubly, even this just means little corner angle, the spacing of prism group also needn't be very big, thereby shorten system length;
2, the refractive index of the deflection angle of reflecting prism and its manufacturing materials and laser instrument excitation wavelength are irrelevant, and this just means that dirigibility and the wavelength adaptability selected at material are very strong;
3, the deflection angle of reflecting prism all the time with the sexual intercourse of corner angle retention wire (deflection angle is 2 α), and irrelevant with incident angle, so can not enlarge the angle of divergence of incident beam;
4, reflecting prism only needs a workplace plating high-reflecting film, has saved cost.
Description of drawings
Fig. 1 is the schematic diagram of the surface array semiconductor laser output beam described of the present invention, and the surface array semiconductor laser in this example is vertically piled up by three LD bar and formed, and has certain clearance between the bar;
Fig. 2 is the slow-axis direction optical system diagram of the reflective microprism array shaping surface array semiconductor laser of the embodiment of the invention 1, by ZEMAX
EE optics software is finished;
Fig. 3 is the prism structure three-dimensional plot of the embodiment of the invention 1;
Fig. 4 is a two-dimentional prism structure synoptic diagram of the present invention, and wherein solid line is the structure of every two-dimentional microprism, and dotted line is the one dimension prism structure that is used for processing two-dimentional microprism;
Fig. 5 is the embodiment of the invention 1, utilize ZEMAX
The xsect hot spot distribution plan of EE optics software emulation, wherein Fig. 5 a is the hot spot distribution plan before fast and slow axis collimation back, the shaping; Fig. 5 b is through the hot spot distribution plan after two groups of reflective microprism array shapings; Fig. 5 c is that the hot spot after the shaping is focused the hot spot figure after mirror focuses on;
Fig. 6 is the slow-axis direction optical system diagram of the reflective microprism array shaping surface array semiconductor laser of the embodiment of the invention 2, by ZEMAX
EE optics software is finished;
Fig. 7 is the embodiment of the invention 2, utilize ZEMAX
The xsect hot spot distribution plan of EE optics software emulation, wherein Fig. 7 a is through the hot spot distribution plan after two groups of reflective microprism array shapings; Fig. 7 b is that the hot spot after the shaping is focused the hot spot figure after mirror focuses on.
Among above-mentioned each figure, 1-forms the LD bar of surface array semiconductor laser; The single luminous zone of 2-semiconductor laser; 3-fast axis collimation microtrabeculae lens; 4-slow axis collimation microtrabeculae face lens array; 5-ZEMAX
One of energy-probe that EE is virtual; 6, group before the reflective microprism array of 11-; 7, organize behind the reflective microprism array of 12-; 8-ZEMAX
Two of the energy-probe that EE is virtual; The 9-condenser lens; 10-ZEMAX
Three of the energy-probe that EE is virtual, the position of putting multimode optical fiber; The single microprism of 13-.
Embodiment
Embodiment 1 has described the shaping process that realizes 800 μ m core diameters, 0.22 numerical aperture by the surface array semiconductor laser of being made up of three LD bar of method of the present invention design, and its design process is as follows:
(1) gap between the bar of surface array semiconductor laser is 1.8mm in the present embodiment, utilize double edge angle reflection microprism array that the slow axis hot spot of every bar is angled to three sections, be filled in respectively in the gap between the bars, realize the purpose of compression slow axial light spot size.
(2) double edge angle reflection microprism array has two-dimentional corner angle, so can realize x, y both direction deviation at any angle to incident beam, the effect of preceding group of prism is that fast, the slow-axis direction hot spot described in the performing step (1) are reset.Because preceding group of microprism to the different deviations of incident beam, destroyed the directivity of incident beam, must adopt and afterwards organize the light of prism after and correct deviation.
(3) form by three microprisms for preceding group of double edge angle reflection microprism array, as shown in Figure 3.Microprism a make light beam on the slow-axis direction to the deflection of x direction, on quick shaft direction to the deflection of y direction; The yawing moment of microprism c then is-the x/-y direction; Microprism b effect is similar to level crossing.Back group prism is made up of three microprisms equally, and effect is to proofread and correct the direction of resetting light beam, as shown in Figure 3.In order to keep the directivity of incident beam, the microprism a of microprism a and preceding array has relation one to one, and x, y direction corner angle are identical, direction is opposite, to guarantee the correct correction to deviation light; In like manner, microprism c ' is corresponding with microprism c; Microprism b ' is corresponding with microprism b.
(4) because each microprism all with a certain section angle that the incident ray deviation is specific, can be determined the corner angle of each sheet prism according to the flat mirror reflects law, synthetic corner angle can be described as: tan
2α=tan
2α
x+ tan
2α
yThe prism that has two-dimentional corner angle with the processing of optics cold working method is difficult to guarantee higher precision, but the corner angle that in fact can process easy processing earlier are the one dimension prism of α, cut, grind to form the prism of two-dimentional corner angle then according to dimensional requirement, this method principle can be found out at the accompanying drawing 4 of back.
(5) each sheet microprism all with a certain section deflection of light to certain location, so each is different for the function of every prism, must be when bonding according to design in advance.The incident angle of different microprisms has nothing in common with each other, so will plate different reflectance coatings respectively.
(6) according to the rule of semiconductor laser shaping, the fast and slow axis direction needs in advance collimation respectively, obtains quasi-parallel light.The position of prism group in light path fixed, and must light be arranged the envelope residence such as preceding group of prism, and bottom line then must keep design, specific in advance inclination angle with optical axis; The good position of group prism deviation before back group prism then must be placed on.In theory should be identical through the light beam after the shaping with incident beam fast and slow axis direction.According to the coupled fiber parameter, select the focus lamp of suitable aperture and focal length to focus on, promptly finish the work of 800 μ m/0.22NA surface array semiconductor laser shapings and optical fiber coupling output.
Before the deflection, after the deflection and the hot spot after focusing on as shown in Figure 5.Can see, be rearranged in quick shaft direction after the elongated hot spot of each bar of slow-axis direction is split into three sections, hot spot squarish after the shaping, the most of concentration of energy of the hot spot after the focusing is in 800 μ m apertures.
This example of above-mentioned enforcement is not that this method can only be formed the face battle array by 3 bar.According to the beam parameter product (BPP of passive optical system, Beam Parameter Product) invariance principle, the about 60mm.mrad of three folding back slow-axis direction BPP, the about 4mm.mrad of quick shaft direction BPP, and the BPP of the multimode optical fiber of 800 μ m/0.22NA is 88mm.mrad, so quick shaft direction can also increase some bar (increasing the BPP that bar does not change slow-axis direction), the number that increases is limited by the aperture of focus lamp and focal length only, and the restriction of this respect can solve by aperture and the focal length to slow-axis direction secondary collimation, expansion focus lamp.
In a lot of commercial Application, the high-brightness fiber-optic coupling output of littler core diameter and numerical aperture has bigger attractive force.The design of prism group has bigger dirigibility among the present invention, in order to further specify the effect that realizes the surface array semiconductor laser beam shaping with the double edge angle prism, embodiment 2 has described by the surface array semiconductor laser of being made up of three LD bar of method design of the present invention and has realized the shaping process that 200 μ m/0.22NA optical fiber are coupled.This design process is identical with the folding principle of embodiment 1 hot spot, and different is in order to realize littler core diameter and numerical aperture, the slow axis hot spot to be carried out 15 times fold.Hot spot after folding is superimposed upon quick shaft direction, makes that the quick shaft direction hot spot is bigger, is difficult to balance and selects the focus lamp of larger aperture to focus on.In order to address this problem, consider less these characteristics of the quick shaft direction angle of divergence, adopted two cylindrical lenses 14,16 to be configured to the compression that the Ke Pule telescopic system carries out the fast axial light spot, focus on focus lamp at last.
Fig. 6 is the slow-axis direction optical system diagram of the reflective microprism array shaping surface array semiconductor laser of the embodiment of the invention 2, by ZEMAX
EE optics software is finished.
After the deflection and the hot spot after focusing on as shown in Figure 7.Can see, be rearranged in quick shaft direction after the elongated hot spot of the slow-axis direction of every bar is split into 15 sections, the quick shaft direction of hot spot is through second-compressed after the shaping, and the most of concentration of energy of the hot spot after the line focus mirror focuses on is in 200 μ m apertures.
Claims (1)
1, the double edge angle reflection microprism array is realized the method for surface array semiconductor laser shaping, it is characterized in that finishing by following steps:
(1) according to the gap between the bars of surface array semiconductor laser, the hot spot that slow axis is cut apart is filled wherein, reach the purpose in compression slow axis hot spot, filling bar gap;
(2) adopt a pair of double edge angle reflecting prism array element to realize shaping feature, the effect of first prism array is that incident light is reset, and the effect of second prism array is to proofread and correct the direction of resetting light beam, makes it consistent;
(3) two microprism array corresponding unit corner angle sizes are identical, and direction is opposite;
(4) according to the requirement of system to microprism array deviation light, calculate corner angle and the synthetic corner angle of each piece microprism at both direction, process the one dimension prism of these synthetic corner angle with the cold worked method of optics, cut into the double edge angle microprism that satisfies two direction corner angle by angle then;
(5) the double edge angle microprism that processes is formed two groups according to its function, glue together, plate reflectance coating respectively;
(6) the quasi-parallel light after double edge angle microprism array group is put into fast and slow axis collimating respectively, accurately adjusting position and angle add focus lamp behind the group prism of back, and the light beam coupling after the shaping is advanced optical fiber.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101432B (en) * | 2006-07-06 | 2011-06-08 | 曹嘉灿 | Optical module |
| US20180326664A1 (en) * | 2017-05-11 | 2018-11-15 | Seurat Technologies, Inc. | Solid State Routing Of Patterned Light For Additive Manufacturing Optimization |
| CN109459741A (en) * | 2018-12-07 | 2019-03-12 | 南京先进激光技术研究院 | A kind of measurement debugging apparatus for laser radar system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5533152A (en) * | 1995-05-02 | 1996-07-02 | Eastman Kodak Company | Method and apparatus for coupling light emitted from a multi-mode laser diode array to a multi-mode optical fiber |
| CN2566291Y (en) * | 2002-09-16 | 2003-08-13 | 上海光通激光光电子技术创新中心有限公司 | Semiconductor laser light beam shaping device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101432B (en) * | 2006-07-06 | 2011-06-08 | 曹嘉灿 | Optical module |
| US20180326664A1 (en) * | 2017-05-11 | 2018-11-15 | Seurat Technologies, Inc. | Solid State Routing Of Patterned Light For Additive Manufacturing Optimization |
| CN109459741A (en) * | 2018-12-07 | 2019-03-12 | 南京先进激光技术研究院 | A kind of measurement debugging apparatus for laser radar system |
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