CN1725630B - Module device of low noise amplifier - Google Patents
Module device of low noise amplifier Download PDFInfo
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- CN1725630B CN1725630B CN 200510036079 CN200510036079A CN1725630B CN 1725630 B CN1725630 B CN 1725630B CN 200510036079 CN200510036079 CN 200510036079 CN 200510036079 A CN200510036079 A CN 200510036079A CN 1725630 B CN1725630 B CN 1725630B
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Abstract
A low noise amplifying component module is prepared as receiving radio frequency input signal by input matching circuit and transmitting signal to ATF 34143 field effect transistor grid , forming source electrode feedback network by the first and the second source electrode feedback networks being connected to ATF 34134 field effect transistor source electrode separately , receiving processing signal of said ATF 34134 transistor by output matching network and outputting it , providing power to said module by power circuit through output matching circuit .
Description
Technical field
The present invention relates to the wireless communication RF devices field, relate generally to the low noise amplifier in the radio-frequency devices.
Background technology
Low noise amplifier is the important component part of wireless communication field, and it generally is applied to receiving system, radar receiving system, the satellite communication receiving system of wireless base station.The major technique characteristics of low noise amplifier are that input under the prerequisite with lower noise factor, output standing-wave ratio and third order intermodulation can both reach a comparatively desirable value.The present low noise amplifier of widespread usage, its basic noise coefficient be greater than 1.5dB, and can not satisfy noise factor with input, export standing-wave ratio and reach comparatively desirable value simultaneously.In order to guarantee that amplifier has lower noise factor and suitable third order intermodulation, amplifier can be selected low noise field-effect transistor ATF-34143 (noise factor is about 0.5dB) for use, is applied in the noise factor of whole amplifying circuit is reached below the 0.7dB.As No. 03139756.5 patent application of China a kind of low noise amplifier module of the ATF-34143 of use field-effect transistor is disclosed, comprising input matching circuit, source feedback circuit, ATF-34143 field-effect transistor, output matching circuit, power circuit and pcb board.What its match circuit adopted is the lumped-parameter circuit pattern, finishes the circuit coupling by inductance capacitance; Because inductance capacitance inevitably discreteness can occur when producing, inductance value and capacitance have certain deviation, therefore adopt the debugging amount of this matching way when producing in enormous quantities bigger.
Summary of the invention
Technical problem solved by the invention provides the better compatible module device of low noise amplifier of a kind of low noise, high-gain and I/O standing wave specific energy.
For achieving the above object, the technical solution used in the present invention is, module device of low noise amplifier comprises the input matching network that is printed on the pcb board, the ATF34143 field-effect transistor, output matching network, source feedback network and power circuit, described input matching circuit received RF input signal, signal is transferred to the grid of described ATF34143 field-effect transistor, described source feedback network comprises first source feedback network and second source feedback network, source electrode with described ATF34143 field-effect transistor links to each other respectively, described output matching network receives the processing signals of described ATF34143 field-effect transistor, and the output of the signal after will handling, described power circuit provides power supply through described output matching circuit for described low noise amplifier spare module, it is characterized in that: described first source feedback network comprises the 5th microstrip line, capacitor C 1, described the 5th microstrip line one end is connected with ATF34143 field-effect transistor source electrode, and the other end links to each other with ground through capacitor C 1 respectively; Described second source feedback network comprises the 4th microstrip line and capacitor C 2, and ATF34143 field-effect transistor source electrode is ground connection behind the 4th microstrip line and capacitor C 2 polyphones successively.
Described the 5th microstrip line live width is 1.5mm;
Described the 4th microstrip line live width is 1.5mm;
Described input matching network comprises first microstrip line, second microstrip line and the 3rd microstrip line, radiofrequency signal is imported described ATF34143 field effect transistor gate through first microstrip line and second microstrip line successively, one end of the 3rd microstrip line connects the node of first microstrip line and second microstrip line, and the other end links to each other with ground;
The live width of described first microstrip line is 2.2mm;
Described second microstrip line is wide to be 0.6mm;
Described the 3rd microstrip line live width is 0.3mm;
Described output matching network comprises the 6th microstrip line, the 7th microstrip line, the 8th microstrip line, capacitor C 3 and capacitor C 4, described the 6th microstrip line one end links to each other with the drain electrode of ATF34143 field-effect transistor, the other end links to each other with the 7th microstrip line, described the 8th microstrip line one end is connected with the node of the 6th microstrip line with the 7th microstrip line, the other end respectively electrical ground through capacitor C 3, the non-earth point of capacitor C 3 is connected with power circuit simultaneously;
Described the 6th microstrip line is wide to be 0.6mm;
Described the 7th microstrip line live width 2.2mm;
Described the 8th microstrip line is wide to be 0.3mm;
What described output matching circuit adopted is distributed circuit, adopts microstrip line to reach coupling; Original employing lumped-parameter circuit.
Described power circuit is the automatic biasing power supply circuits, comprise resistance R 1, R2, R3, capacitor C 5, described resistance R 1 one ends link to each other with the node of microstrip line 5 with capacitor C 1, other end ground connection, resistance R 2 one ends link to each other with capacitor C 3 non-earth points, and an end links to each other with resistance R 3, and the other end of resistance R 3 links to each other with power Vcc, the node of described capacitor C 5 one ends and resistance R 2, resistance R 3 links to each other, an end ground connection.
Module device of low noise amplifier of the present invention, what adopt is the scheme of distributed constant coupling, promptly the design of mating mutually by microstrip line replaces the design that inductance capacitance mates mutually, successfully solve amplifier and obtained little noise factor and the contradiction that obtains good input, output standing-wave ratio, compared with prior art, low noise, high-gain and good input, the effect of output standing-wave ratio compatibility have been obtained.Low noise amplifier spare modular structure of the present invention is tight, and required components and parts are few, saves production cost, and the reliability height, makes adjustment method also simpler in debugging, and is easy, and is beneficial to the batch process of product.
Description of drawings
Fig. 1 is a module device of low noise amplifier structured flowchart of the present invention.
Fig. 2 is the electrical schematic diagram of module device of low noise amplifier of the present invention.
Embodiment
Below in conjunction with accompanying drawing technical scheme is described in further detail:
Fig. 1 is a module device of low noise amplifier structured flowchart of the present invention.
Module device of low noise amplifier comprises the input matching network that is printed on the pcb board, the ATF34143 field-effect transistor, output matching network, source feedback network and power circuit, described input matching circuit received RF input signal, signal is transferred to the grid of described ATF34143 field-effect transistor, described source feedback network comprises first source feedback network and second source feedback network, source electrode with described ATF34143 field-effect transistor links to each other respectively, described output matching network is accepted the signal that described ATF34143 field-effect transistor is handled, and the output of the signal after will handling, described automatic biasing power supply circuits provide power supply through described output matching circuit for described low noise amplifier spare module.
Present embodiment adopts that to have a noise factor low, the high ATF34143 field-effect transistor with 4 pin Plastic Package gains, under the situation of the operating frequency range 450MHz-10GHz of described amplifier tube, the third order intermodulation capture point power output (OIP3) of amplifier tube can reach 31.5dB, the maximum working voltage V between source electrode and the drain electrode
DSBe 4.5V.The current margin of ATF34143 field effect transistor is 21mA-39mA.
Fig. 2 is the electrical schematic diagram of module device of low noise amplifier of the present invention.
Described input matching network is a kind of T type match circuit in parallel.Described input matching network comprises the first microstrip line TL1, the second microstrip line TL2 and the 3rd microstrip line TL3, radiofrequency signal (RF) is imported described ATF34143 field effect transistor gate through the first microstrip line TL1 and the second microstrip line TL2 successively, the end of the 3rd microstrip line TL3 connects the node of the first microstrip line TL1 and the second microstrip line TL2, and the other end links to each other with ground; The described first microstrip line TL1 live width is 2.2mm; The described second microstrip line TL2 is wide to be 0.6mm; Described the 3rd microstrip line TL3 live width is 0.3mm.
What the input matching circuit of present embodiment adopted is that distributed circuit is acted on behalf of lumped-parameter circuit, adopts microstrip line to reach coupling; What input signal and field-effect transistor adopted is direct coupling system, has reached to reduce Insertion Loss, the effect of noise-reduction coefficient.
Described first source feedback network comprises the 5th microstrip line TL5, capacitor C 1, and described the 5th microstrip line TL5 one end is connected with ATF34143 field-effect transistor source electrode, and the other end is respectively through capacitor C 1 ground connection; Described the 5th microstrip line TL5 live width is 1.5mm.
Described second source feedback network comprises the 4th microstrip line TL4 and capacitor C 2, and ATF34143 field-effect transistor source electrode is ground connection behind the 4th microstrip line TL4 and capacitor C 2 polyphones successively; Described the 4th microstrip line TL4 live width is 1.5mm.
Feedback network of the present invention also adopts distributed circuit, reaches coupling by microstrip line; Make that every technical indicator is better, and the reliability height, adjustment method is also simpler, easily.
Output matching network is a kind of anti-T type matching network in parallel.Described output matching network comprises the 6th microstrip line TL6, the 7th microstrip line TL7, the 8th microstrip line TL8, capacitor C 3, reaches capacitor C 4, described the 6th microstrip line TL6 one end links to each other with the drain electrode of ATF34143 field-effect transistor, the other end is output signal after the 7th microstrip line TL7 and capacitor C 4 successively, described the 8th microstrip line TL8 one end is connected with the node of the 6th microstrip line TL6 and the 7th microstrip line TL7, the other end is respectively through capacitor C 3 ground connection, and the non-earth point of capacitor C 3 is connected with power circuit simultaneously; Described the 6th microstrip line TL6 live width is 0.6mm; Described the 7th microstrip line TL7 live width is 2.2mm; Described the 8th microstrip line TL8 live width is 0.3mm;
The signal of output matching network output exports the next stage circuit to through the 9th microstrip line TL9, and wherein, the 9th microstrip line TL9 is that live width is the 2.2mm microstrip line.
Power circuit comprises resistance R 1, resistance R 2, resistance R 3 and capacitor C 5, described resistance R 1 one ends link to each other with the node of capacitor C 1 with the 5th microstrip line TL5, other end ground connection, resistance R 2 one ends link to each other with capacitor C 3 non-earth points, one end links to each other with resistance R 3, the other end of resistance R 3 links to each other with power Vcc, and the node of described capacitor C 5 one ends and resistance R 2, resistance R 3 links to each other an end ground connection.
The direct current biasing of ATF34143 field-effect transistor adopts auto bias circuit, realize the gate bias of ATF34143 field-effect transistor by the voltage drop Vgs between drain electrode and the source electrode, supply power voltage is added to the drain electrode of delivering to field-effect transistor in parallel little band matched line of output matching network again by the drain electrode current-limiting resistance, provides voltage to drain electrode.Described biasing circuit makes field-effect transistor be operated in Ids:30mA (Ids is for flowing to the electric current of source electrode through drain electrode), Vgs:4V.Use this example low noise amplifier module device, the technical indicator that batch process can reach is: noise factor can be accomplished 0.7dB in 1700MHz～2000MHz frequency range, and input, output standing-wave ratio are less than 1.3dB.
Protection scope of the present invention is not subjected to the restriction of embodiment; in force, though inconsistent among some parameter and the embodiment, as: the bandwidth of each microstrip line and resistance etc.; as long as technical scheme adopts the coupling of microstrip line as whole circuit, all should fall into protection scope of the present invention.
Claims (5)
1. module device of low noise amplifier, comprise the input matching network that is printed on the pcb board, the ATF34143 field-effect transistor, output matching network, source feedback network and power circuit, described input matching circuit received RF input signal, signal is transferred to the grid of described ATF34143 field-effect transistor, described source feedback network comprises first source feedback network and second source feedback network, source electrode with described ATF34143 field-effect transistor links to each other respectively, described output matching network receives the processing signals of described ATF34143 field-effect transistor, and the output of the signal after will handling, described power circuit provides power supply through described output matching circuit for described low noise amplifier spare module, it is characterized in that: described input matching network comprises first microstrip line, second microstrip line and the 3rd microstrip line, radiofrequency signal is imported described ATF34143 field effect transistor gate through first microstrip line and second microstrip line successively, one end of the 3rd microstrip line connects the node of first microstrip line and second microstrip line, and the other end links to each other with ground; Described first source feedback network comprises the 5th microstrip line, capacitor C 1, and described the 5th microstrip line one end is connected with ATF34143 field-effect transistor source electrode, and the other end links to each other with ground through capacitor C 1; Described second source feedback network comprises the 4th microstrip line and capacitor C 2, and ATF34143 field-effect transistor source electrode is ground connection behind the 4th microstrip line and capacitor C 2 polyphones successively; Described output matching network comprises the 6th microstrip line, the 7th microstrip line, the 8th microstrip line, capacitor C 3 and capacitor C 4, described the 6th microstrip line one end links to each other with the drain electrode of ATF34143 field-effect transistor, the other end is output signal after the 7th microstrip line and capacitor C 4 successively, described the 8th microstrip line one end is connected with the node of the 6th microstrip line with the 7th microstrip line, the other end through capacitor C 3 electrical ground, the non-earth point of capacitor C 3 is connected with power circuit simultaneously; Described power circuit is the automatic biasing power supply circuits, comprise resistance R 1, resistance R 2, resistance R 3 and capacitor C 5, described resistance R 1 one ends link to each other with the node of the 5th microstrip line with capacitor C 1, other end ground connection, resistance R 2 one ends link to each other with capacitor C 3 non-earth points, and an end links to each other with resistance R 3, and the other end of resistance R 3 links to each other with power Vcc, the node of described capacitor C 5 one ends and resistance R 2, resistance R 3 links to each other, an end ground connection.
2. module device of low noise amplifier according to claim 1 is characterized in that: the described first microstrip line live width is 2.2mm; Described second microstrip line is wide to be 0.6mm; Described the 3rd microstrip line live width is 0.3mm.
3. module device of low noise amplifier according to claim 1 and 2 is characterized in that: described the 5th microstrip line live width is 1.5mm; Described the 4th microstrip line live width is 1.5mm.
4. module device of low noise amplifier according to claim 1 and 2 is characterized in that: described the 6th microstrip line is wide to be 0.6mm; Described the 7th microstrip line live width is 2.2mm; Described the 8th microstrip line is wide to be 0.3mm.
5. module device of low noise amplifier according to claim 3 is characterized in that: described the 6th microstrip line is wide to be 0.6mm; Described the 7th microstrip line live width is 2.2mm; Described the 8th microstrip line is wide to be 0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510036079 CN1725630B (en) | 2005-07-15 | 2005-07-15 | Module device of low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510036079 CN1725630B (en) | 2005-07-15 | 2005-07-15 | Module device of low noise amplifier |
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| CN1725630A CN1725630A (en) | 2006-01-25 |
| CN1725630B true CN1725630B (en) | 2010-10-06 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662263B (en) * | 2008-08-27 | 2012-11-21 | 中国科学院微电子研究所 | Bias circuit used in Ku waveband internally-matched field effect transistor |
| CN103954851B (en) * | 2014-04-03 | 2017-05-10 | 中国船舶重工集团公司第七二二研究所 | Noise coefficient measuring method and noise coefficient standard device |
| CN105162422A (en) * | 2015-09-07 | 2015-12-16 | 燕山大学 | Single-end-structure low noise amplifier |
| CN106921354B (en) * | 2017-02-08 | 2020-07-28 | 中国科学院微电子研究所 | Broadband matching circuit for radio frequency power amplifier |
| CN107834139A (en) * | 2017-10-20 | 2018-03-23 | 绵阳鑫阳知识产权运营有限公司 | A kind of transmission line structure of low-noise amplifier |
| CN108736840A (en) * | 2018-05-04 | 2018-11-02 | 清华大学 | Millimeter wave amplifier match circuit based on differential coupling line |
| CN110113015B (en) * | 2019-04-29 | 2023-03-24 | 中国电子科技集团公司第十三研究所 | Grid biasing circuit and power amplifier |
| CN112787598A (en) * | 2021-01-29 | 2021-05-11 | 河北雄安太芯电子科技有限公司 | W-band ultra-wideband low-noise amplifier |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378997A (en) * | 1992-10-26 | 1995-01-03 | Plessey Semiconductors Limited | Low noise amplifier with capacitive feedback |
| CN1357969A (en) * | 2000-11-16 | 2002-07-10 | 德克萨斯仪器股份有限公司 | Fast set low-power bias unit and method for single-end circuit |
| CN1568035A (en) * | 2003-07-07 | 2005-01-19 | 深圳市中兴通讯股份有限公司 | Module arrangement of broadband low-noise amplifier device |
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2005
- 2005-07-15 CN CN 200510036079 patent/CN1725630B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378997A (en) * | 1992-10-26 | 1995-01-03 | Plessey Semiconductors Limited | Low noise amplifier with capacitive feedback |
| CN1357969A (en) * | 2000-11-16 | 2002-07-10 | 德克萨斯仪器股份有限公司 | Fast set low-power bias unit and method for single-end circuit |
| CN1568035A (en) * | 2003-07-07 | 2005-01-19 | 深圳市中兴通讯股份有限公司 | Module arrangement of broadband low-noise amplifier device |
Non-Patent Citations (3)
| Title |
|---|
| US 5378997 A,全文. |
| 潘少祠,官伯然.2.4GHz低噪声放大器的研究.杭州电子科技大学学报25 4.2005,25(4),46-49. |
| 潘少祠,官伯然.2.4GHz低噪声放大器的研究.杭州电子科技大学学报25 4.2005,25(4),46-49. * |
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