CN107834139A - A kind of transmission line structure of low-noise amplifier - Google Patents

A kind of transmission line structure of low-noise amplifier Download PDF

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Publication number
CN107834139A
CN107834139A CN201710996679.8A CN201710996679A CN107834139A CN 107834139 A CN107834139 A CN 107834139A CN 201710996679 A CN201710996679 A CN 201710996679A CN 107834139 A CN107834139 A CN 107834139A
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CN
China
Prior art keywords
transmission line
line
low
noise amplifier
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710996679.8A
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Chinese (zh)
Inventor
龚平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mianyang Xinyang Intellectual Property Rights Operation Co Ltd
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Mianyang Xinyang Intellectual Property Rights Operation Co Ltd
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Publication date
Application filed by Mianyang Xinyang Intellectual Property Rights Operation Co Ltd filed Critical Mianyang Xinyang Intellectual Property Rights Operation Co Ltd
Priority to CN201710996679.8A priority Critical patent/CN107834139A/en
Publication of CN107834139A publication Critical patent/CN107834139A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors

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  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a kind of transmission line structure of low-noise amplifier, including dielectric layer 1, it is separately positioned on the transmission line and ground plane 2 on dielectric layer two sides, the transmission line includes the first transmission line 31 and the second transmission line 32 being sequentially connected, the line width of first transmission line is 5.8 mm to 6.2mm, and line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8 mm to 1.0mm, and line length is 3.2mm to 3.5mm.Using this kind of transmission line, filter action can be not only realized, realizes impedance transform effect;Also the circuit structure of low-noise amplifier can be simplified, required component is few, reduces circuit area.

Description

A kind of transmission line structure of low-noise amplifier
Technical field
The present invention relates to low-noise amplifier field, and in particular to a kind of transmission line structure of low-noise amplifier.
Background technology
WLAN has turned into the main flow communication mode of current mobile communication equipment.Traditional WLAN WLAN is widely adopted With the 2.4GHz frequency ranges based on IEEE802.11b/g standards, bandwidth is only 83MHz.The limited own warp of bandwidth and speed can not expire Foot data communication needs of today, so International Electrical and Electronic Engineering Association IEEE are proposed 802.11a standards, by carrier wave Frequency expansion is to 5GHz frequency ranges.In order to reduce cost, space is saved, reduces the complexity of circuit, there is an urgent need in a design Multiple communication standards and communications band are integrated in platform.Worldwide system operator is in order to meet increasingly increased number of users Amount, is turning to two-band equipment.China is carrying out large-scale wlan network construction at present, while industrial circle is also positive 5GHz frequencies are promoted to open, therefore, the market potential of WLAN two-band equipment is very big.
Low-noise amplifier is the nucleus module of wireless receiver, and major function is to amplify the faint letter that antenna receives Number, it is generally used for mobile communication equipment, the reception system of wireless base station, Radar Receiver System, Satellite Communication Receive system System.Existing low-noise amplifier will realize that impedance converts, and need to set impedance inverter circuit, and its circuit structure is complicated.
The content of the invention
In order to solve the above-mentioned technical problem the present invention provides a kind of transmission line structure of low-noise amplifier.
The present invention is achieved through the following technical solutions:
A kind of transmission line structure, including dielectric layer, the transmission line and ground plane that are separately positioned on dielectric layer two sides, the biography Defeated line includes the first transmission line, the second transmission line being sequentially connected, and the line width of first transmission line is 5.8mm to 6.2mm, 5.8mm to 6.2mm line width can ensure that the characteristic impedance of the first transmission line in 50 ohms, can be realized with load impedance Matching, line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm, 0.8mm to 1.0mm line The wide characteristic impedance for ensureing the second transmission line can be realized with output impedance and matched in 140 ohms, line length 3.2mm To 3.5mm.Distributed constant effect can eliminate the imaginary part of output impedance caused by the line length of two sections of transmission lines so that pair net The final output impedance of network is equal to 50 ohm.Transmission line is placed in above dielectric layer, is ground plane below dielectric layer.First transmission line Low-impedance line is formed, the capacitance structure of one end ground connection can be equivalent to together with ground plane;Second transmission line forms high impedance line, can It is equivalent to the induction structure connected in circuit.First transmission line uses the transmission line of said structure, can not only realize that filtering is made With can also realize impedance transform effect.Above-mentioned transmission line is applied in low-noise amplifier, can not only realize that low noise is put The filter action of big device, also achieve the function of impedance conversion, it is not necessary to impedance inverter circuit is additionally set, simplifies low noise The circuit structure of amplifier, required component is few, reduces circuit area, is advantageous to produce in batches.
The line width of first transmission line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;Second transmission line Line width be 0.85mm to 0.9mm, line length is 3.2mm to 3.3mm.
The line width of first transmission line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm, Line length is 3.3mm.
The present invention compared with prior art, has the following advantages and advantages:
1st, the first transmission line of the invention forms low-impedance line, and the capacitance structure of one end ground connection can be equivalent to ground plane; Second transmission line forms high impedance line, can be equivalent to the induction structure connected in circuit;Not only may be used using the transmission line structure Filter action is realized, can also realize impedance transform effect.
2nd, using the transmission line structure of this programme, circuit components can be reduced, reduce circuit area;The transmission line is used In low-noise amplifier, the filter action of low-noise amplifier can be not only realized, also achieves the function of impedance conversion, no Need additionally to set impedance inverter circuit, simplify the circuit structure of low-noise amplifier, required component is few, reduces circuit face Product, is advantageous to produce in batches.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application Point, do not form the restriction to the embodiment of the present invention.
Fig. 1 is the structural representation of this transmission line structure.
Fig. 2 is Fig. 1 equivalent circuit diagram.
Label in figure is entitled:
1st, dielectric layer;2nd, ground plane;31st, the first transmission line;32nd, the second transmission line.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make For limitation of the invention.
Embodiment 1
A kind of transmission line structure as shown in Figure 1 and Figure 2, including dielectric layer 1, the transmission line for being separately positioned on dielectric layer two sides With ground plane 2, the transmission line includes the first transmission line 31 and the second transmission line 32 being sequentially connected, first transmission line Line width be 5.8mm to 6.2mm, line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm, Line length is 3.2mm to 3.5mm.In this transmission line scheme, the characteristic impedance of the first transmission line between 48~52 ohm, Between 133~145 ohm, the imaginary part of output impedance is less than 15 ohm for the characteristic impedance of second transmission line.
The line width of first transmission line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;Second transmission line Line width be 0.85mm to 0.9mm, line length is 3.2mm to 3.3mm.
The line width of first transmission line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm, Line length is 3.3mm.Now, the characteristic impedance of the first transmission line is 50 ohm, and the characteristic impedance of the second transmission line is 139 ohm, The imaginary part of output impedance is 8 ohm.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not used to limit this hair Bright protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. all should Within protection scope of the present invention.

Claims (3)

  1. A kind of 1. transmission line structure of low-noise amplifier, it is characterised in that:Including dielectric layer, it is separately positioned on dielectric layer two sides Transmission line and ground plane, the transmission line includes the first transmission line and the second transmission line that are sequentially connected, first transmission The line width of line is 5.8mm to 6.2mm, and line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm, Line length is 3.2mm to 3.5mm.
  2. A kind of 2. transmission line structure of low-noise amplifier according to claim 1, it is characterised in that first transmission The line width of line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;The line width of second transmission line be 0.85mm extremely 0.9mm, line length are 3.2mm to 3.3mm.
  3. A kind of 3. transmission line structure of low-noise amplifier according to claim 1, it is characterised in that first transmission The line width of line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm, line length 3.3mm.
CN201710996679.8A 2017-10-20 2017-10-20 A kind of transmission line structure of low-noise amplifier Withdrawn CN107834139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710996679.8A CN107834139A (en) 2017-10-20 2017-10-20 A kind of transmission line structure of low-noise amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710996679.8A CN107834139A (en) 2017-10-20 2017-10-20 A kind of transmission line structure of low-noise amplifier

Publications (1)

Publication Number Publication Date
CN107834139A true CN107834139A (en) 2018-03-23

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CN201710996679.8A Withdrawn CN107834139A (en) 2017-10-20 2017-10-20 A kind of transmission line structure of low-noise amplifier

Country Status (1)

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CN (1) CN107834139A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021119897A1 (en) * 2019-12-16 2021-06-24 瑞声声学科技(深圳)有限公司 Transmission line

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419813A (en) * 1967-06-22 1968-12-31 Rca Corp Wide-band transistor power amplifier using a short impedance matching section
US4053842A (en) * 1976-09-13 1977-10-11 Rca Corporation Microwave frequency discriminator comprising an FET amplifier
US4350958A (en) * 1980-01-17 1982-09-21 Motorola, Inc. Impedance matching circuitry for radio frequency signal power amplifiers
US4638261A (en) * 1985-08-26 1987-01-20 Sperry Corporation Low noise amplifier with high intercept point
CN1725630A (en) * 2005-07-15 2006-01-25 摩比天线技术(深圳)有限公司 Module device of low noise amplifier
CN101800346A (en) * 2010-01-19 2010-08-11 北京邮电大学 Two-band radio frequency amplifier micro strip matching network
EP2637302A1 (en) * 2012-03-08 2013-09-11 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
CN105471398A (en) * 2014-08-25 2016-04-06 中兴通讯股份有限公司 Power amplifier circuit and power amplifier
EP3051693A1 (en) * 2015-01-27 2016-08-03 Kabushiki Kaisha Toshiba High-frequency semiconductor amplifier

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419813A (en) * 1967-06-22 1968-12-31 Rca Corp Wide-band transistor power amplifier using a short impedance matching section
US4053842A (en) * 1976-09-13 1977-10-11 Rca Corporation Microwave frequency discriminator comprising an FET amplifier
US4350958A (en) * 1980-01-17 1982-09-21 Motorola, Inc. Impedance matching circuitry for radio frequency signal power amplifiers
US4638261A (en) * 1985-08-26 1987-01-20 Sperry Corporation Low noise amplifier with high intercept point
CN1725630A (en) * 2005-07-15 2006-01-25 摩比天线技术(深圳)有限公司 Module device of low noise amplifier
CN101800346A (en) * 2010-01-19 2010-08-11 北京邮电大学 Two-band radio frequency amplifier micro strip matching network
EP2637302A1 (en) * 2012-03-08 2013-09-11 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
CN105471398A (en) * 2014-08-25 2016-04-06 中兴通讯股份有限公司 Power amplifier circuit and power amplifier
EP3051693A1 (en) * 2015-01-27 2016-08-03 Kabushiki Kaisha Toshiba High-frequency semiconductor amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021119897A1 (en) * 2019-12-16 2021-06-24 瑞声声学科技(深圳)有限公司 Transmission line

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Application publication date: 20180323

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