CN107834139A - A kind of transmission line structure of low-noise amplifier - Google Patents
A kind of transmission line structure of low-noise amplifier Download PDFInfo
- Publication number
- CN107834139A CN107834139A CN201710996679.8A CN201710996679A CN107834139A CN 107834139 A CN107834139 A CN 107834139A CN 201710996679 A CN201710996679 A CN 201710996679A CN 107834139 A CN107834139 A CN 107834139A
- Authority
- CN
- China
- Prior art keywords
- transmission line
- line
- low
- noise amplifier
- transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
Landscapes
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of transmission line structure of low-noise amplifier, including dielectric layer 1, it is separately positioned on the transmission line and ground plane 2 on dielectric layer two sides, the transmission line includes the first transmission line 31 and the second transmission line 32 being sequentially connected, the line width of first transmission line is 5.8 mm to 6.2mm, and line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8 mm to 1.0mm, and line length is 3.2mm to 3.5mm.Using this kind of transmission line, filter action can be not only realized, realizes impedance transform effect;Also the circuit structure of low-noise amplifier can be simplified, required component is few, reduces circuit area.
Description
Technical field
The present invention relates to low-noise amplifier field, and in particular to a kind of transmission line structure of low-noise amplifier.
Background technology
WLAN has turned into the main flow communication mode of current mobile communication equipment.Traditional WLAN WLAN is widely adopted
With the 2.4GHz frequency ranges based on IEEE802.11b/g standards, bandwidth is only 83MHz.The limited own warp of bandwidth and speed can not expire
Foot data communication needs of today, so International Electrical and Electronic Engineering Association IEEE are proposed 802.11a standards, by carrier wave
Frequency expansion is to 5GHz frequency ranges.In order to reduce cost, space is saved, reduces the complexity of circuit, there is an urgent need in a design
Multiple communication standards and communications band are integrated in platform.Worldwide system operator is in order to meet increasingly increased number of users
Amount, is turning to two-band equipment.China is carrying out large-scale wlan network construction at present, while industrial circle is also positive
5GHz frequencies are promoted to open, therefore, the market potential of WLAN two-band equipment is very big.
Low-noise amplifier is the nucleus module of wireless receiver, and major function is to amplify the faint letter that antenna receives
Number, it is generally used for mobile communication equipment, the reception system of wireless base station, Radar Receiver System, Satellite Communication Receive system
System.Existing low-noise amplifier will realize that impedance converts, and need to set impedance inverter circuit, and its circuit structure is complicated.
The content of the invention
In order to solve the above-mentioned technical problem the present invention provides a kind of transmission line structure of low-noise amplifier.
The present invention is achieved through the following technical solutions:
A kind of transmission line structure, including dielectric layer, the transmission line and ground plane that are separately positioned on dielectric layer two sides, the biography
Defeated line includes the first transmission line, the second transmission line being sequentially connected, and the line width of first transmission line is 5.8mm to 6.2mm,
5.8mm to 6.2mm line width can ensure that the characteristic impedance of the first transmission line in 50 ohms, can be realized with load impedance
Matching, line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm, 0.8mm to 1.0mm line
The wide characteristic impedance for ensureing the second transmission line can be realized with output impedance and matched in 140 ohms, line length 3.2mm
To 3.5mm.Distributed constant effect can eliminate the imaginary part of output impedance caused by the line length of two sections of transmission lines so that pair net
The final output impedance of network is equal to 50 ohm.Transmission line is placed in above dielectric layer, is ground plane below dielectric layer.First transmission line
Low-impedance line is formed, the capacitance structure of one end ground connection can be equivalent to together with ground plane;Second transmission line forms high impedance line, can
It is equivalent to the induction structure connected in circuit.First transmission line uses the transmission line of said structure, can not only realize that filtering is made
With can also realize impedance transform effect.Above-mentioned transmission line is applied in low-noise amplifier, can not only realize that low noise is put
The filter action of big device, also achieve the function of impedance conversion, it is not necessary to impedance inverter circuit is additionally set, simplifies low noise
The circuit structure of amplifier, required component is few, reduces circuit area, is advantageous to produce in batches.
The line width of first transmission line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;Second transmission line
Line width be 0.85mm to 0.9mm, line length is 3.2mm to 3.3mm.
The line width of first transmission line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm,
Line length is 3.3mm.
The present invention compared with prior art, has the following advantages and advantages:
1st, the first transmission line of the invention forms low-impedance line, and the capacitance structure of one end ground connection can be equivalent to ground plane;
Second transmission line forms high impedance line, can be equivalent to the induction structure connected in circuit;Not only may be used using the transmission line structure
Filter action is realized, can also realize impedance transform effect.
2nd, using the transmission line structure of this programme, circuit components can be reduced, reduce circuit area;The transmission line is used
In low-noise amplifier, the filter action of low-noise amplifier can be not only realized, also achieves the function of impedance conversion, no
Need additionally to set impedance inverter circuit, simplify the circuit structure of low-noise amplifier, required component is few, reduces circuit face
Product, is advantageous to produce in batches.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.
Fig. 1 is the structural representation of this transmission line structure.
Fig. 2 is Fig. 1 equivalent circuit diagram.
Label in figure is entitled:
1st, dielectric layer;2nd, ground plane;31st, the first transmission line;32nd, the second transmission line.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1
A kind of transmission line structure as shown in Figure 1 and Figure 2, including dielectric layer 1, the transmission line for being separately positioned on dielectric layer two sides
With ground plane 2, the transmission line includes the first transmission line 31 and the second transmission line 32 being sequentially connected, first transmission line
Line width be 5.8mm to 6.2mm, line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm,
Line length is 3.2mm to 3.5mm.In this transmission line scheme, the characteristic impedance of the first transmission line between 48~52 ohm,
Between 133~145 ohm, the imaginary part of output impedance is less than 15 ohm for the characteristic impedance of second transmission line.
The line width of first transmission line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;Second transmission line
Line width be 0.85mm to 0.9mm, line length is 3.2mm to 3.3mm.
The line width of first transmission line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm,
Line length is 3.3mm.Now, the characteristic impedance of the first transmission line is 50 ohm, and the characteristic impedance of the second transmission line is 139 ohm,
The imaginary part of output impedance is 8 ohm.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not used to limit this hair
Bright protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. all should
Within protection scope of the present invention.
Claims (3)
- A kind of 1. transmission line structure of low-noise amplifier, it is characterised in that:Including dielectric layer, it is separately positioned on dielectric layer two sides Transmission line and ground plane, the transmission line includes the first transmission line and the second transmission line that are sequentially connected, first transmission The line width of line is 5.8mm to 6.2mm, and line length is 4.2mm to 4.5mm;The line width of second transmission line is 0.8mm to 1.0mm, Line length is 3.2mm to 3.5mm.
- A kind of 2. transmission line structure of low-noise amplifier according to claim 1, it is characterised in that first transmission The line width of line is 5.9mm to 6.1mm, and line length is 4.2mm to 4.4mm;The line width of second transmission line be 0.85mm extremely 0.9mm, line length are 3.2mm to 3.3mm.
- A kind of 3. transmission line structure of low-noise amplifier according to claim 1, it is characterised in that first transmission The line width of line is 6.0mm, line length 4.3mm;The line width of second transmission line is 0.9mm, line length 3.3mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710996679.8A CN107834139A (en) | 2017-10-20 | 2017-10-20 | A kind of transmission line structure of low-noise amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710996679.8A CN107834139A (en) | 2017-10-20 | 2017-10-20 | A kind of transmission line structure of low-noise amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107834139A true CN107834139A (en) | 2018-03-23 |
Family
ID=61648937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710996679.8A Withdrawn CN107834139A (en) | 2017-10-20 | 2017-10-20 | A kind of transmission line structure of low-noise amplifier |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107834139A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021119897A1 (en) * | 2019-12-16 | 2021-06-24 | 瑞声声学科技(深圳)有限公司 | Transmission line |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3419813A (en) * | 1967-06-22 | 1968-12-31 | Rca Corp | Wide-band transistor power amplifier using a short impedance matching section |
US4053842A (en) * | 1976-09-13 | 1977-10-11 | Rca Corporation | Microwave frequency discriminator comprising an FET amplifier |
US4350958A (en) * | 1980-01-17 | 1982-09-21 | Motorola, Inc. | Impedance matching circuitry for radio frequency signal power amplifiers |
US4638261A (en) * | 1985-08-26 | 1987-01-20 | Sperry Corporation | Low noise amplifier with high intercept point |
CN1725630A (en) * | 2005-07-15 | 2006-01-25 | 摩比天线技术(深圳)有限公司 | Module device of low noise amplifier |
CN101800346A (en) * | 2010-01-19 | 2010-08-11 | 北京邮电大学 | Two-band radio frequency amplifier micro strip matching network |
EP2637302A1 (en) * | 2012-03-08 | 2013-09-11 | Kabushiki Kaisha Toshiba | Microwave semiconductor amplifier |
CN105471398A (en) * | 2014-08-25 | 2016-04-06 | 中兴通讯股份有限公司 | Power amplifier circuit and power amplifier |
EP3051693A1 (en) * | 2015-01-27 | 2016-08-03 | Kabushiki Kaisha Toshiba | High-frequency semiconductor amplifier |
-
2017
- 2017-10-20 CN CN201710996679.8A patent/CN107834139A/en not_active Withdrawn
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3419813A (en) * | 1967-06-22 | 1968-12-31 | Rca Corp | Wide-band transistor power amplifier using a short impedance matching section |
US4053842A (en) * | 1976-09-13 | 1977-10-11 | Rca Corporation | Microwave frequency discriminator comprising an FET amplifier |
US4350958A (en) * | 1980-01-17 | 1982-09-21 | Motorola, Inc. | Impedance matching circuitry for radio frequency signal power amplifiers |
US4638261A (en) * | 1985-08-26 | 1987-01-20 | Sperry Corporation | Low noise amplifier with high intercept point |
CN1725630A (en) * | 2005-07-15 | 2006-01-25 | 摩比天线技术(深圳)有限公司 | Module device of low noise amplifier |
CN101800346A (en) * | 2010-01-19 | 2010-08-11 | 北京邮电大学 | Two-band radio frequency amplifier micro strip matching network |
EP2637302A1 (en) * | 2012-03-08 | 2013-09-11 | Kabushiki Kaisha Toshiba | Microwave semiconductor amplifier |
CN105471398A (en) * | 2014-08-25 | 2016-04-06 | 中兴通讯股份有限公司 | Power amplifier circuit and power amplifier |
EP3051693A1 (en) * | 2015-01-27 | 2016-08-03 | Kabushiki Kaisha Toshiba | High-frequency semiconductor amplifier |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021119897A1 (en) * | 2019-12-16 | 2021-06-24 | 瑞声声学科技(深圳)有限公司 | Transmission line |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110892581B (en) | Antenna system and terminal equipment | |
CN101359924B (en) | Radio frequency integrated circuit and transmit/receive switch | |
CN109659686B (en) | High-isolation MIMO antenna | |
CN102948072A (en) | Noise-canceling for differential amplifiers requiring no external matching | |
CN114285433B (en) | Wireless communication assembly, method and terminal equipment | |
CN104283574A (en) | Software radio receiver circuit | |
CN107666293A (en) | A kind of medium integrates suspended substrate stripline WLAN dual-passband low-noise amplifiers | |
CN202352836U (en) | Double-frequency common antenna | |
CN110149121B (en) | Adjustable ultra-wideband zero intermediate frequency transceiver radio frequency analog front end | |
CN103457618B (en) | Radio frequency chip front-end system and signal processing method thereof | |
CN107834139A (en) | A kind of transmission line structure of low-noise amplifier | |
US8606207B2 (en) | Fractal curve based filter | |
WO2020043108A1 (en) | Fm antenna circuit and terminal device | |
Saponara et al. | Design exploration of mm-wave integrated transceivers for short-range mobile communications towards 5G | |
CN203377868U (en) | Low power consumption radio frequency emission circuit device | |
CN103675765B (en) | High-frequency software radio receiving system | |
CN107548074B (en) | Wireless access system, access point and client field device | |
EP4096103A1 (en) | Transmit-receive switch with harmonic distortion rejection and electrostatic discharge protection | |
CN101820508A (en) | Radio frequency front end circuit of single-ended transfer difference of digital mobile television receiver tuner | |
CN209929482U (en) | Terminal ultra wide band filtering antenna device | |
CN103546177B (en) | Radio-frequency (RF) Receiving Device and vehicle-mounted monitoring equipment of eating dishes without rice or wine | |
Huang et al. | Tunable antenna design procedure and harmonics suppression methods of the tunable DVB-H antenna for mobile applications | |
CN206922743U (en) | Integrated Ka wave band antennas front end | |
CN211406017U (en) | Radio frequency transceiver suitable for functional mobile phone | |
CN101295817A (en) | Antenna module and device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180323 |
|
WW01 | Invention patent application withdrawn after publication |