CN1718868A - Electrolytic film plating device - Google Patents
Electrolytic film plating device Download PDFInfo
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- CN1718868A CN1718868A CNA2005100078257A CN200510007825A CN1718868A CN 1718868 A CN1718868 A CN 1718868A CN A2005100078257 A CNA2005100078257 A CN A2005100078257A CN 200510007825 A CN200510007825 A CN 200510007825A CN 1718868 A CN1718868 A CN 1718868A
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- 238000007747 plating Methods 0.000 title claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 98
- 238000000576 coating method Methods 0.000 claims abstract description 98
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 23
- 239000010936 titanium Substances 0.000 claims abstract description 23
- 238000009713 electroplating Methods 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 31
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000002362 mulch Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract 1
- 229910000457 iridium oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 47
- 230000000052 comparative effect Effects 0.000 description 24
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a technology of easily forming a plated film with a uniform thickness, even when electrolytically plating an article like a wafer, to which an extremely precise plated thickness and the uniformity are required. This electrolytic plating apparatus for forming the plated film on the surface of the wafer, through supplying a plating solution into a plating tank to contact the wafer with the plating solution and supplying a plating current to the wafer, has: a cup-shaped plating tank having an opening around which a cathode electrode for contacting with a periphery of the wafer is arranged; and an anode electrode arranged in the plating tank so as to face the wafer mounted on the opening, wherein the anode electrode comprises an electrode substrate made of titanium, a platinum coating as an intermediate layer formed thereon, and an iridium oxide coating formed on the surface of the intermediate layer.
Description
Technical field
The present invention relates to electrolytic film plating device, particularly be suitable for carrying out as the wafer that semi-conductor is used, needing high precision, the electrolytic film plating device when the uniform electrolytic film plating of coating film thickness is handled.
Background technology
In the past, electrolytic film plating is handled and not only is used for decorating and surface protection, also apply flexibly in various fields, for example, on the processing treatment of electric and electronic material.Wherein, handle that by electrolytic film plating metals such as copper or gold are covered on the wafer that semi-conductor uses, form circuit, salient point (bump) etc.
The electrolytic film plating device of the wafer that semi-conductor is used for example is: comprise coating bath and anode, coating liquid is supplied with in the coating bath, wafer is contacted with coating liquid, provide electroplating current to wafer simultaneously, wafer surface is carried out the device of coating film treatment; Above-mentioned coating bath has the peristome that has disposed the ring cathode that contacts with the periphery of wafer; Above-mentioned anode is configured in coating bath inside with respect to the wafer that is placed on this peristome.In above-mentioned electrolytic film plating device, the solvability anode (anode: be designated hereinafter simply as anode) of plated film metal formation and the insoluble anode that constitutes by Pt (platinum) or Ti (titanium) etc. have been used.
This wafer is carried out the desired characteristic of coating film treatment smoothness (leveling), plated film tack of homogeneity, the plated film face of coating film thickness etc. are arranged.To coating film thickness, whole covering plated film faces of being strict with wafer are even especially.For this reason, the inhomogeneity method as improving coating film thickness can adopt the distribution of current uniform method that makes electroplating current.
And the inhomogeneity factor that the control electroplating current distributes has: the primary current that is subjected to the geometry shape influence of anode and negative electrode distributes, and the secondary current that is subjected to about the electric current inflow polar resistance that electrode produced distributes.Carry out coating film thickness electrolytic film plating processing more uniformly by controlling these distribution of current.
Distribute in order to control above-mentioned primary current, for example make anode shape similar to the shape of negative electrode (plated body body).In addition, because the end of electrode is easy to generate concentrating of electroplating current, therefore exists and concentrate the trend of carrying out coating film treatment to the end.So, in order to alleviate current concentration, also can dispose the object that is called mask or shield to electrode tip, make the coating film thickness homogenizing (open the flat 8-74088 of communique number of Japan's special permission) on end and the part in addition thereof.
Summary of the invention
Present situation is: such distribution of current is subjected to the control of the whole bag of tricks of the shape of plated body body or the kind of coating liquid etc.But, when on the wafer surface that semi-conductor is used, carrying out gold-plated or copper plating treatment, require to comprise plated film characteristic coating film thickness, that have very high degree of precision and shape.Particularly, require whole plated film masks of wafer that homogeneous thickness is arranged about coating film thickness.Why? its reason is: if in uneven thickness, directly influence the fabrication yield of the prepared a large amount of electronic devices and components (chip) of wafer.Also because in recent years wafer is constantly increased diameter, the electrolytic film plating that requires the whole surface of 12 inches such large-area wafers of diameter to be carried out uniform thickness is handled.Also because except increasing area, urgent simultaneously hope realizes being the manufacturing technology of purpose by provide big electroplating current to make efficient with raising to wafer, even providing under the situation of big electroplating current, also require on the whole surface of wafer, can carry out more the electrolytic film plating of uniform thickness and handle.
Therefore, the object of the present invention is to provide a kind of technology, this technology is by improving the anode of electrolytic film plating device, though as wafer require coating film thickness to have extremely strict inhomogeneity coating film treatment the time, also carry out the electrolytic film plating processing of uniform thickness easily.
In order to address the above problem, the invention provides a kind of electroplanting device: comprising that the coating bath with the peristome that has disposed the negative electrode that contacts with the periphery of wafer makes itself and the opposed anode of wafer that is placed on this peristome with being configured in coating bath inside, coating liquid offered wafer is contacted with coating liquid, simultaneously provide electroplating current to wafer, wafer surface is carried out in the electrolytic film plating device of coating film treatment, above-mentioned anode is at the platinum mulch film that is provided as the middle layer on the electrode base material of titanium system and the Indium sesquioxide mulch film is set on this interlayer surfaces forms.
The present invention is by improving anode to realize the more inhomogeneity invention of high precision coating film thickness, the present inventor attempts by improving anode as described below with the inhomogeneity reason that improves coating film thickness: in the past, the present inventor is in order to realize uniform coating film thickness, the various countermeasures of mask and solution stirring etc. have been adopted, but think that it is not enough wanting basic the solution by so former improvement, so again the anode as the supply source of electroplating current is studied.
Anode as this electrolytic film plating device, available have a deliquescent electrode by what plated film metals such as copper or nickel constituted, the perhaps electrode of the insoluble that constitutes by titanium or platinum etc., but, in order to simplify coating operation, improve fabrication yield, the anode of the insoluble that the replacing of many use electrodes and maintenance times are few when the electrolytic film plating of wafer is handled.As the anodic typical example of this insoluble, consider situations such as erosion resistance, known have an anode (hereinafter referred to as the Pt/Ti anode) that adds that on the electrode base material of titanium system platinum covers.For this Pt/Ti anode, consider erosion resistance and aspects such as electroconductibility, cost, mostly be several microns platinum mulch film usually.
For such Pt/Ti anode, the present inventor does not consider the electrode cost, and uses the Pt/Ti anode that platinum mulch film thickness is thickened, carry out the coating film treatment of wafer surface after, find: when the thickness of platinum mulch film is thickened, can improve the homogeneity of its coating film thickness.Platinum mulch film thickness is about 4-5 μ m usually, if its overlay capacity is thickened 4-5 doubly when (16-25 μ m is thick), obviously improves the homogeneity of plated film as can be known.Also confirm overvoltage value in the coating film treatment in addition when platinum mulch film thickness thickens, obviously descend.
This can think promptly, to be covered in the influence of the rerum natura of the most surperficial platinum of Pt/Ti anode because the homogeneity of coating film thickness is subjected to the material property of anode surface.So the present inventor is envisioned for the direct resistivity that influences electrode conductivuty with the rerum natura of this material.The runny material of electric capacity because the material that resistivity is little is known as, (resistivity is 10.6 * 10 to platinum
-6Ω cm (source: " correcting 4 editions is compiled on science brief guide basis ", putting down into distribution on September 30th, 5, editor company is a Corporation Japan section association.Below identical)) resistivity than titanium (42.0 * 10
-6Ω cm) resistivity is little, is about 1/4th value, thus to resistivity value less than this platinum but also after the material that satisfies the characteristic that coating liquid is had erosion resistance etc. studied, the present inventor had laid stress on the indium.This is because indium (5.3 * 10
-6Ω cm) resistivity value is half of platinum, and its erosion resistance is also strong.
The result who furthers investigate, present inventor have finished following invention: adopt at the platinum mulch film and the anode that is formed on the Indium sesquioxide mulch film on this interlayer surfaces that are provided with on the electrode base material of titanium system as the middle layer.Anode of the present invention can be described as on used in the past Pt/Ti anodic platinum mulch film surface, again the electrode that forms of capping oxidation indium.Like this, can realize suppressing increasing considerably of electrode cost, and improve the homogeneity of coating film thickness.Anode of the present invention has the erosion resistance to coating liquid, also can keep the stability (not destroying the character of coating liquid when electrolytic film plating is handled) of coating liquid.Owing to be not the structure of the complexity as mask and shield etc., therefore, can improve the homogeneity of coating film thickness easily by adopting the conduct electrode of used electrolytic film plating device in the past.Also because indium is more cheap than platinum, favourable on price in addition, to a certain degree suppress the anode that cost rises so can be described as.
By present inventor's research, confirmed that also anode of the present invention compares with anode in the past, the plated film metal is difficult in electrode surface and separates out.For example in gold-plated processing, when adopting Pt/Ti anode in the past, if when carrying out long coating film treatment, electrode surface goes out separating out of cash.But, anode of the present invention, even carry out gold-plated processing for a long time, electrode surface does not produce separating out of gold yet.That is, electrolytic film plating device of the present invention also carries out the maintenance of electrode easily.
The thickness that the anodic platinum of electrolytic film plating device of the present invention covers is 1.0-8.0 μ m, and the cladding thickness of Indium sesquioxide is 1.0-5.0 μ m, and is comparatively desirable.If the platinum cladding thickness during less than 1.0 μ m, generates pin hole easily on the platinum mulch film, the stability trend that Indium sesquioxide covers descends.In addition, if when surpassing 8.0 μ m, the electrode cost too increases, and has lost practicality.And the Indium sesquioxide cladding thickness is during less than 1.0 μ m, when platinum covers 1 μ m, the effect of coating film thickness homogenizing weakened.On the other hand, if when surpassing the thickness of 5.0 μ m, inhomogeneity effect does not change yet, and the Indium sesquioxide present situation that covers such thickness is unusual difficulty, does not have practicality.In addition,, do not have restriction especially, can use different shapes such as netted, tabular for the shape of the anodic electrode self of electrolytic film plating device of the present invention.
By the present invention, even when as wafer, needing the extremely strict inhomogeneity coating film treatment of coating film thickness, also carry out the electrolytic film plating of uniform thickness easily and handle.
Description of drawings
Fig. 1 is the perspective cross-sectional slice of the beaker test film coating apparatus of the 1st embodiment.
Fig. 2 is the perspective cross-sectional slice of salient point.
Fig. 3 is the perspective cross-sectional slice of the cup type electrolytic film plating device of the 2nd embodiment.
Fig. 4 is the orthographic plan at the mensuration position of shows wafer.
Label declaration
1 coating bath
2 plated body bodies
3 anodes
4 mixing components
10 cup type film coating apparatus
20 coating baths
30 wafers
40 peripheries
50 negative electrodes
60 sealing-rings
70 coating liquid supplying openings
80 coating liquid spouts
90 anodes
Embodiment
Describe implementing best mode of the present invention.
The 1st embodiment
In the 1st embodiment,, can simply carry out the result that the homogeneity of the beaker test coating film thickness that film coating apparatus obtained that electrolytic film plating handles investigates and describe having adopted the anode that has covered Indium sesquioxide.
Used beaker test film coating apparatus is the device that can carry out coating film treatment simply as shown in Figure 1 in the 1st embodiment.This beaker test film coating apparatus is the tabular plated body body 2 that disposes in coating bath 1 as negative electrode, at the side configuration anode 3 of this plated body body 2.Also dispose mixing component 4 in the bottom of coating bath 1 in addition, adopt so-called agitator that coating liquid is stirred.
In the 1st embodiment, the Si wafer that the use diameter is 6 inches is divided into 1/4th wafer as plated body body 2.Plated in the conduct of this wafer split-plot experiment sheet on the single side face of surface (surface of a side all is coated with protective membrane overleaf), covering as kind of metal layer thickness is the gold of 0.1 μ m.Covered with protective film (thickness 20 μ m) on this kind metal level uniformly-spaced to form the square salient point of a plurality of 100 * 100 μ m, forms the protective membrane figure on this protective membrane then.The gold-plated formation bump height target of process is the salient point of 18 μ m on the quilt plating surface of the wafer split-plot experiment sheet that has formed such figure.As coating liquid, the highly purified gold plating liquid of weakly alkaline that available no cyanogen (ノ Application シ ア Application) is (Electroplating Engineers of Japan, Limited makes, and product is called MICROFABAu140).The pH of this gold plating liquid is 7.6-8.0, and proportion is 11-25 Baume (Baume).As anode, the anode of three kinds shown in the free list 1 uses these three kinds of anodes to carry out the formation of salient point respectively.
Table 1
| Anode | Electrode base metal | Be capped material 1 | Be capped material 2 |
| A | Ti | Pt(4μm) | - |
| B | Ti | Pt(1μm) | Ir(4μm) |
| C | Ti | - | Ir(4μm) |
Anode shape: extend web
The anode of table 1 is the shape of extend web all, has the width that is plated the surface that is equal to wafer split-plot experiment sheet.Anode A is only the Pt plated film to be covered electrode base metal Ti to go up and form, and anode B forms by covering Ir by plated film again above the plated film formation Pt on electrode base metal Ti.In addition, positive C directly forms by plated film covering Ir on electrode base metal Ti.For the anode B and the C that have covered Ir, carry out thermal treatment in the air atmosphere by electric furnace, form Indium sesquioxide (IrO
2).Adopt above-mentioned three kinds of anodes, on wafer split-plot experiment sheet, form au bump.Gold-plated condition when salient point forms is: 60 ℃ of liquid temperature, current density are 0.5A/dm
2
Test run(s) is from the outset till the 1.0MTO, carries out coating film treatment, with every 0.2MTO 0.2,0.4,0.6,0.8,1.0MTO forms au bump, this salient point is formed characteristic investigates.The MTO of unit here (metaltern over) is meant the consumption of the plated film metal in the coating liquid.When carrying out coating film treatment continuously, for the gold concentration in the constant coating liquid, suitably replenish plated film the gold in the used up coating liquid, for example, 1.0MTO be meant when gold contained in the coating liquid at initial stage is 10g the magnitude of recruitment when suitably additional gold to coating liquid reaches 10g.
When the salient point of when beginning and every 0.2MTO forms, carry out above-mentioned gold-plated processing.The die forging of the available gold system of the gold-plated processing beyond salient point forms replaces wafer split-plot experiment sheet with blank flat (2 * 3cm rectangle), disposes the anode of identical material on its two sides, and this die forging is carried out gold-plated processing continuously with the two sides of blank flat.The gold-plated treatment condition of this moment are that the liquid temperature is that 60 ℃, current density are 0.5A/dm
2
Evaluation to the 1st embodiment is: the hardness of bump height and salient point, outward appearance above the salient point top are observed.The height of salient point is after the gold-plated processing that salient point forms, and protective membrane is peeled off exposed au bump, measures this au bump height and obtains.Measuring method is the bump height tester (P-11 that tencor company makes) that adopts contact pin type, height (distance from kind of metallic surface to the salient point top) to the wide L of 90 μ m (with reference to figure 2) of the top surface of salient point carries out METHOD FOR CONTINUOUS DETERMINATION, obtains its average bump height, maximum height, minimum constructive height.This mensuration is its central salient point that is positioned to a wafer split-plot experiment sheet in addition, and is positioned at 4 salient points square apart from its central salient point 20mm, amounts to that 5 salient points carry out.The measurement result of bump height is presented on the table 2-table 4.
Table 2
| Anode A | ||||||||||
| Measure the salient point position | ||||||||||
| ? MTO | ? 1 | ? 2 | ? 3 | ? 4 | ? 5 | Maximum height | Minimum constructive height | Center line average | Dispersion value | Homogeneity |
| 0.0 | 18.27 | 17.76 | 18.39 | 17.73 | 17.90 | 18.39 | 17.73 | 18.01 | 0.27 | 3.7 |
| 0.2 | 16.92 | 16.76 | 16.84 | 16.95 | 17.30 | 17.30 | 16.76 | 16.65 | 0.31 | 3.2 |
| 0.4 | 17.56 | 18.02 | 17.24 | 16.72 | 18.68 | 18.68 | 16.72 | 17.64 | 0.67 | 11.1 |
| 0.6 | 17.19 | 16.71 | 16.60 | 16.36 | 17.24 | 17.24 | 16.36 | 16.82 | 0.34 | 5.2 |
| 0.8 | 18.11 | 18.87 | 19.41 | 18.46 | 18.32 | 19.41 | 18.11 | 18.63 | 0.48 | 7.0 |
| 1.0 | 17.73 | 18.20 | 18.58 | 16.95 | 19.46 | 19.46 | 16.95 | 18.18 | 0.84 | 13.8 |
| Mean value | 0.48 | 7.33 | ||||||||
Table 3
| Anode B | ||||||||||
| Measure the salient point position | ||||||||||
| ? MTO | ? 1 | ? 2 | ? 3 | ? 4 | ? 5 | Maximum height | Minimum constructive height | Center line average | Dispersion value | Homogeneity |
| 0.0 | 17.91 | 17.24 | 18.12 | 17.51 | 17.47 | 18.12 | 17.24 | 17.65 | 0.32 | 5.0 |
| 0.2 | 16.60 | 17.71 | 18.11 | 17.27 | 17.89 | 18.11 | 16.60 | 17.52 | 0.53 | 8.6 |
| 0.4 | 16.27 | 17.02 | 17.32 | 16.79 | 17.56 | 17.56 | 16.27 | 16.99 | 0.45 | 7.6 |
| 0.6 | 17.07 | 16.97 | 17.12 | 16.55 | 17.39 | 17.39 | 16.55 | 17.02 | 0.27 | 4.9 |
| 0.8 | 16.90 | 17.22 | 17.75 | 16.90 | 17.60 | 17.75 | 16.90 | 17.27 | 0.35 | 4.9 |
| 1.0 | 17.70 | 19.93 | 18.67 | 19.41 | 19.27 | 19.93 | 17.70 | 19.00 | 0.76 | 11.7 |
| Mean value | 0.45 | 7.13 | ||||||||
Table 4
| Positive C | ||||||||||
| Measure the salient point position | ||||||||||
| ? MTO | ? 1 | ? 2 | ? 3 | ? 4 | ? 5 | Maximum height | Minimum constructive height | Center line average | Dispersion value | Homogeneity |
| 0.0 | 18.54 | 17.81 | 17.98 | 18.29 | 17.91 | 18.54 | 17.81 | 18.11 | 0.27 | 4.0 |
| 0.2 | 16.66 | 16.43 | 17.04 | 16.74 | 16.90 | 17.04 | 16.43 | 16.75 | 0.21 | 3.6 |
| 0.4 | 18.53 | 18.20 | 18.61 | 18.18 | 18.92 | 18.92 | 18.18 | 18.49 | 0.28 | 4.0 |
| 0.6 | 17.76 | 18.19 | 18.31 | 17.90 | 19.32 | 19.32 | 17.76 | 18.30 | 0.55 | 8.5 |
| 0.8 | 14.75 | 14.53 | 15.00 | 14.64 | 14.85 | 15.00 | 14.53 | 14.75 | 0.16 | 3.2 |
| 1.0 | 18.20 | 18.30 | 17.62 | 18.22 | 19.31 | 19.31 | 17.62 | 18.33 | 0.55 | 9.2 |
| Mean value | 0.34 | 5.43 | ||||||||
The inhomogeneity value of table 2-table 4 is calculated by following formula.
Homogeneity (%)=(maximum height-minimum constructive height)/center line average * 100
Dispersion value in the table is to calculate by 5 values of measuring bump height.
From the result of table 2-table 4 as can be known: covered Indium sesquioxide (IrO
2) anode B and C, compare with anode A in the past, the dispersion value of thickness diminishes.From the dispersion value of thickness to coating film treatment institute elapsed time, to compare with anode A in the past, the change of the dispersion value of anode B and C is less, trends towards stablizing.On the homogeneity of thickness, positive C is distinguished for best.By the decidable as a result of the 1st embodiment, by the Indium sesquioxide (IrO that adopted surface coverage
2) anode can improve the homogeneity of coating film thickness.
The 2nd embodiment
In the 2nd embodiment, cup type electrolytic film plating device has as shown in Figure 3 adopted various anodes as shown in Figure 5, carries out electrolytic film plating and handles, and the homogeneity of this coating film thickness is investigated.Anode has adopted IrO
2/ Pt/Ti anode (embodiment 1), Pt/Ti anode (comparative example 1-5) and Ir/Ti anode (embodiment 6,7).
Table 5
| Anode | Pt(μm) | IrO 2(μm) | Shape |
| Embodiment 1 | 1 | 4 | Netted |
| Comparative example 1 | 4 | - | Netted |
| Comparative example 2 | 8 | - | Netted |
| Comparative example 3 | 16 | - | Netted |
| Comparative example 4 | 32 | - | Netted |
| Comparative example 5 | 64 | - | Netted |
| Comparative example 6 | - | 4 | Netted |
| Comparative example 7 | - | 4 | Plectane |
Cup type electrolytic film plating device 10 shown in Figure 3 is to place wafer 30 along the upper opening of coating bath 20, and configuration cyclic negative electrode 50 makes it contact with whole peripheries 40 of wafer 30.Configuration prevents that coating liquid from leaking the sealing-ring 60 of usefulness below negative electrode 50.The coating liquid supplying opening 70 that is positioned at bottom center is set in coating bath 20, and other is provided with coating liquid spout 80, and this spout is to make the coating liquid that is provided by coating liquid supplying opening 6 flow out to the outside of coating bath 20 with the upwelling that flows to the wafer of being placed 30.In the bottom of coating bath 20, the wafer 30 opposed anodes 90 that are provided with and place.
Plated film to as if diameter be 8 inches wafer, use that to have covered as kind of metal layer thickness in the side as coated surface be the wafer of the gold of 0.15 μ m.And coating film treatment is covered with protective film on this kind metal level (thickness is 25 μ m), and (the plated film area is 0.34dm to the figure of the salient point shape that formation 23.5 * 63.5 μ m are square
2).Being plated on the surface of the wafer that forms such figure, form au bump by carrying out gold-plated processing.Coating liquid can use the coating liquid that is same as above-mentioned the 1st embodiment.The coating film treatment condition is that current density is 0.5dm
2, the plated film time is about 60 minutes, is the salient point of 18 μ m to form object height.In the present embodiment, do not need fully to dispose, control shield and the anode masks of using and when carrying out the coating film treatment of product wafer, carry out current density usually in order correctly to grasp the only influence of the coating film treatment of antianode.
After carrying out coating film treatment, wafer is taken off from cup type electrolytic film plating device, the wafer after this coating film treatment is washed, drying, peel off protective membrane after, wash once more and dry.Then, for the homogeneity to coating film thickness is estimated, measure being positioned at as shown in Figure 4 the bump height of lip-deep 17 place's parts of wafer.Measuring method is the same like the 1st embodiment with condition.The measurement result of bump height is shown in Table 6.
Table 6
| Anode | Maximum height (μ m) | Minimum constructive height (μ m) | Center line average (μ m) | Dispersion value (μ m) | Homogeneity (%) | Voltage (V) |
| Embodiment 1 | 24.93 | 18.12 | 20.73 | 6.81 | 32.9 | 0.604 |
| Comparative example 1 | 25.87 | 17.06 | 21.55 | 8.80 | 40.8 | 0.665 |
| Comparative example 2 | 24.58 | 17.06 | 20.75 | 7.52 | 36.2 | 0.645 |
| Comparative example 3 | 25.23 | 17.82 | 21.23 | 7.41 | 34.9 | 0.602 |
| Comparative example 4 | 24.75 | 17.73 | 20.92 | 7.02 | 33.6 | 0.590 |
| Comparative example 5 | 24.40 | 17.82 | 20.88 | 6.55 | 31.4 | 0.607 |
| Comparative example 6 | 25.26 | 17.60 | 21.06 | 7.66 | 36.4 | 0.677 |
| Comparative example 7 | 23.58 | 18.08 | 20.41 | 5.50 | 26.9 | 0.647 |
Can confirm that from the result of the comparative example 1-5 of table 6 along with the increase of anodic Pt thickness, the homogeneity of thickness improves.Also find behind the magnitude of voltage when measuring coating film treatment in addition, along with Pt thickness increases, the magnitude of voltage step-down.Hence one can see that, and the electroconductibility of anode itself influences the homogeneity of coating film thickness.On the other hand, the result from embodiment 1, comparative example 6,7 can distinguish: utilize to have covered Indium sesquioxide (IrO
2) anode, Billy more can improve the homogeneity of coating film thickness with in the past anode (comparative example 1).The anode that can improve thickness evenness is the discoideus anode of comparative example 7.In addition we know, the anode of embodiment 1 improves the homogeneity of coating film thickness with the level that is same as comparative example 4.Though the non-constant of precision of its bump height of data shown in the table 6 is such as mentioned above, utilizes the coating film treatment of present embodiment to omit fully and carry out the configuration of the shield etc. of distribution of current adjustment usefulness to observing the only influence of antianode.
For each anode of the foregoing description 1, comparative example 6 and 7, to its Pt and IrO
2Stability, the outward appearance after the coating film treatment of mulch film carried out the investigation back and confirmed that the stability of comparative example 6,7 is not fine, the color of outward appearance also has inhomogeneous.On the contrary, if can confirm the anode of embodiment 1, then stability is good, and color does not have inhomogeneous yet.When carrying out long coating film treatment, utilize the anode of comparative example 1-5, electrode surface is identified separating out of gold., as the anode of embodiment 1, comparative example 6 and 7, electrode surface has IrO
2Even tectal electrode when carrying out coating film treatment for a long time, also confirms not have separating out of gold.Can think behind the inhomogeneity result of comprehensive result who separates out phenomenon who judges this stability and outward appearance, gold and above-mentioned coating film thickness: comprise that the anode that the cost aspect has a practicality is the anode of embodiment 1.
Claims (2)
1. electrolytic film plating device, it be comprise coating bath and be configured in coating bath with the peristome that has disposed the negative electrode that contacts with wafer perimeter portion inner and make itself and the opposed anode of wafer that is placed on this peristome, coating liquid is offered in the coating bath, wafer is contacted with coating liquid, simultaneously provide electroplating current to wafer, wafer surface is carried out the electrolytic film plating device of coating film treatment, it is characterized in that, described anode is at the platinum mulch film that is provided as the middle layer on the electrode base material of titanium system and the Indium sesquioxide mulch film is set on this interlayer surfaces forms.
2. electrolytic film plating device according to claim 1 is characterized in that, the thickness of platinum mulch film is 1.0-8.0 μ m, and the thickness of Indium sesquioxide mulch film is 1.0-5.0 μ m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004201769A JP2006022379A (en) | 2004-07-08 | 2004-07-08 | Electrolytic plating apparatus |
| JP2004201769 | 2004-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1718868A true CN1718868A (en) | 2006-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100078257A Pending CN1718868A (en) | 2004-07-08 | 2005-01-28 | Electrolytic film plating device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006022379A (en) |
| KR (1) | KR20060004594A (en) |
| CN (1) | CN1718868A (en) |
| TW (1) | TW200602519A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007263674A (en) * | 2006-03-28 | 2007-10-11 | Nippon Steel Corp | Crack detection sensor |
| JP4976120B2 (en) | 2006-06-14 | 2012-07-18 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Wafer plating method |
| KR100900829B1 (en) * | 2006-11-06 | 2009-06-04 | 이광우 | Assistance anode for plating of vehicles wheel |
| KR100966664B1 (en) * | 2007-10-11 | 2010-06-29 | 이광우 | Assistance anode for plating of vehicles wheel |
| JP5134339B2 (en) | 2007-11-02 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
| CN114351179A (en) * | 2021-12-02 | 2022-04-15 | 江苏友诺环保科技有限公司 | Iridium tantalum manganese coating titanium anode plate with intermediate layer and preparation method thereof |
-
2004
- 2004-07-08 JP JP2004201769A patent/JP2006022379A/en active Pending
- 2004-11-16 TW TW093135074A patent/TW200602519A/en unknown
- 2004-12-24 KR KR1020040111930A patent/KR20060004594A/en not_active Application Discontinuation
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| TW200602519A (en) | 2006-01-16 |
| KR20060004594A (en) | 2006-01-12 |
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