CN1718559A - A kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material - Google Patents
A kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material Download PDFInfo
- Publication number
- CN1718559A CN1718559A CN 200410069190 CN200410069190A CN1718559A CN 1718559 A CN1718559 A CN 1718559A CN 200410069190 CN200410069190 CN 200410069190 CN 200410069190 A CN200410069190 A CN 200410069190A CN 1718559 A CN1718559 A CN 1718559A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- sample
- chamber
- high temperature
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, the particularly a kind of cold wall high temperature high power silicon carbide of vertical (SiC) epitaxial material manufacturing installation based on the heating of copper spiral tube radio frequency.This device, comprise double-deck quartzy epitaxial chamber, sample handing-over chamber, sample transmission and bracing or strutting arrangement, corrugated tube setter, plate shutdown valve, its double-deck quartzy epitaxial chamber, plate shutdown valve, sample handing-over chamber, corrugated tube setter and sample transmission and bracing frame are connected in turn up and down on the vertical axis; Sample transmission and bracing frame are positioned on the common vertical axis.The present invention has adopted the quartzy growth room of the water cooled double-layered of vertical structure, has axial symmetry, is easy to control air-flow condition, and the aura phenomenon does not take place the heating efficiency height; And extensibility is strong, by increasing the diameter of silica tube, can the epitaxy size silicon carbide (SiC) epitaxial material of bigger or small size multi-disc.
Description
Technical field
The present invention relates to a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, the particularly a kind of cold wall high temperature high power silicon carbide of vertical (SiC) epitaxial material manufacturing installation based on the heating of copper spiral tube radio frequency.
Background technology
In recent years because science and technology development and military affairs, space flight, radar communication, oil drilling, automotive industry etc. to the heavy demand of high temperature resistant, high power work and anti-irradiated electrons device, be that wide bandgap semiconductor materials and device research thereof of representative paid close attention to by people with silicon carbide (SiC).Silicon carbide (SiC) is the third generation semi-conductor that occurs after silicon (Si) and gallium arsenide (GaAs) conventional semiconductors, have many good characteristics such as high and fabulous physics of forbidden band wide (Si 3 times), thermal conductivity height (Si 3.3 times), breaking down field strength height (Si 10 times), saturated electrons drift speed height (Si 2.5 times), working temperature height (400 ~ 600 ℃), bonded energy and chemical stability, make it aspect device application of high temperature, high-power, anti-irradiation advantageous potentiality and advantage arranged.Current, high temperature, the good semiconducter device major part of performance high-power, anti-irradiation all are to make of silicon carbide (SiC) material in the world.Exactly because huge applications potentiality that good characteristic that silicon carbide possessed and silicon carbide device are showed and the special status that on national defense applications, has, pay attention to very much the research and development of carbofrax material and device in the world, the R﹠D work that huge fund is engaged in silicon carbide is all being thrown by many Western governments and company.The research work of silicon carbide comprises from growth, the characteristic present of the preparation of silicon carbide (SiC) monocrystalline, epitaxial material (comprising iso-epitaxy and hetero epitaxy), to the research and development of the various high temperature of silicon carbide, high frequency, high power device.Wherein silicon carbide epitaxial growth is gordian technique and a bottleneck of realizing silicon carbide device.Prepare silicon carbide device, need high quality devices structure epitaxial material, as effective control of surface of good pattern, thickness, adulterated effective control, good thickness and uniform doping etc.In effective several growth technologies, the chemical vapor deposition (CVD) technology has become the crucial growing technology of high-quality silicon carbide (SiC) device architecture material, and makes the development work of silicon carbide device make a breakthrough.So-called CVD technology is exactly with chemical compound gas such as silane (SiH
4), ethene (C
2H
4) and hydrogen (H
2) to wait reactant gases to feed epitaxy indoor, on hot substrate surface chemical reaction takes place, and on substrate the desirable thin-film material of deposit, as silicon carbide (SiC) epitaxial material.
Summary of the invention
The objective of the invention is to design the cold wall high temperature high power silicon carbide of a kind of vertical (SiC) epitaxial material manufacturing installation, utilize this device not only can realize the big area heteroepitaxial growth of silicon carbide (non-silicon carbide (SiC) substrate material: comprise single crystalline Si substrate, Sapphire Substrate, silicon-silicon-dioxide-surface silicon (SOI) substrate, zinc oxide (ZnO) and other flexible substrate etc.), and can realize isoepitaxial growth on silicon carbide (SiC) substrate, and reach higher silicon carbide epitaxy material thickness and doping content homogeneity.
For achieving the above object, technical scheme of the present invention provides a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, comprise double-deck quartzy epitaxial chamber, sample handing-over chamber, sample transmission and bracing or strutting arrangement, corrugated tube setter, plate shutdown valve, wherein, the sample transmission is vertical with bracing frame to be provided with, be arranged with the corrugated tube setter on it, the bottom of sample transmission and bracing frame is affixed by the lower port of flange circle and corrugated tube setter; The top of corrugated tube setter is arranged with sample handing-over chamber again, and the lower port of the upper port of corrugated tube setter and sample handing-over chamber is affixed; The top of sample handing-over chamber is arranged with the plate shutdown valve again, and the upper port of sample handing-over chamber and the lower port of plate shutdown valve are affixed; The top of plate shutdown valve is arranged with double-deck quartzy epitaxial chamber again, and the upper port of plate shutdown valve and the lower port of double-deck quartzy epitaxial chamber are affixed; The top of sample transmission and bracing frame is positioned at the cavity volume of double-deck quartzy epitaxial chamber, and the top of sample transmission and bracing frame is positioned at the cavity volume center of double-deck quartzy epitaxial chamber; Double-deck quartzy epitaxy is indoor graphite induction heater, and graphite induction heater is horizontally disposed with, and the top of its lower surface center and sample transmission and bracing frame joins; Double-deck quartzy epitaxial chamber periphery circle middle part is with a circle copper spiral tube heater coil, between copper spiral tube heater coil and the growth room's outer wall certain interval is arranged; Its double-deck quartzy epitaxial chamber, plate shutdown valve, sample handing-over chamber, corrugated tube setter and sample transmission and bracing frame are connected in turn up and down on the vertical axis; Sample transmission and bracing frame are positioned on the common vertical axis.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described sample transmission and bracing frame, comprise the little graphite rod, gravelstone English tube support and the gravelstone English tube support fixer that transmit bar, magnetosheath, transmission bar vacuum jacket, carbon-bearing silicon coating, wherein, transmitting bar and magnetosheath is dynamically connected, transmit the bar vacuum jacket and be placed in the magnetosheath periphery, its upper end is provided with the flange circle, can be tightly connected with the lower port flange circle that is positioned at the corrugated tube setter above it; The upper end of the little graphite rod of carbon-bearing silicon coating is a frustum of a cone, the frustum of a cone is connected with graphite induction heater, its stage casing is a right cylinder, its lower end also is a right cylinder, the cylindrical diameter in lower end is littler than the cylindrical diameter in stage casing, and the lower end right cylinder inserts in the upper end inner core of cylindric gravelstone English tube support; The lower end inner core of gravelstone English tube support is placed on the ladder axostylus axostyle that transmits the bar upper end, and the lower end outer side inserts the gravelstone English tube support fixer that transmits the bar upper surface, forms running fit between them; Magnetosheath and peripheral hardware motor are dynamically connected; Transmission bar, little graphite rod, gravelstone English tube support and gravelstone English tube support fixer are sealed in the vacuum chamber of device formation.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, the quartzy epitaxial chamber of its described bilayer is made up of two concentric silica tubes that diameter is different, and the upper end is with flangeseal, and the lower end is tightly connected with flange circle and plate shutdown valve; Following end flanges circle side is provided with water inlet pipe, and upper flanges dish side is provided with rising pipe, and water inlet pipe, rising pipe communicate with the mezzanine space that two concentric silica tubes constitute; The central position of upper flanges dish is provided with inlet pipe, and the inner chamber of upper flanges dish is provided with the gas buffer decollator.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described gas buffer decollator, form by two portions, a gas buffer breaker plate and a notched annulus are fixed on the gas buffer breaker plate in the upper flanges dish of growth room with notched annulus by the below; Many apertures are arranged on the gas buffer breaker plate, the distribution that is centrosymmetric, middle portion, be positioned at inlet mouth under do not have aperture.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described sample handing-over chamber, cylindric for cruciform, four ports of being with flange rings are arranged, its upper port links to each other with the sealing of plate shutdown valve, and lower port and corrugated tube setter are tightly connected; Both sides port, one side ports are sample introduction door, and the opposite side port is connected to extraction pipe.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described corrugated tube setter, the flange ring horizontal-extending of its upper and lower port has a plurality of legs, and the leg uniform distribution is provided with the hole, is fixed with pillar in the hole; Adjustable fixing two ends device for fastening to change the relative distance of upper and lower port flange ring, is regulated the position of graphite induction heater in the silica tube growth room.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, the water-cooling structure of the quartzy epitaxial chamber of its described bilayer, water coolant is mobile from bottom to top, reactant gases flows from top to bottom; At inlet mouth the gas buffer decollator is installed, has eliminated the strong turbulence phenomenon of reactant gases, and at the indoor formation smooth flow of epitaxy gas.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described graphite induction heater, it is a cylindrical block, there is a groove its upper surface, be used for placing the silicon carbide substrates material, the lower surface central part has a frustum of a cone groove, and the conical boss of frustum of a cone groove gravelstone inker upper surface forms and closely cooperates.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described gravelstone English tube support fixer, for cylindric, the external diameter of cylindric internal diameter and gravelstone English tube support is adaptive, cylindric lower end oral-lateral outer rim has a circle horizontal protrusion, the external diameter of the external diameter of projection and vertical transmission bar is adaptive, is provided with the plurality of fixed hole on the plane of horizontal protrusion, and is affixed with the transmission bar by device for fastening; The tube inwall of gravelstone English tube support fixer and the gap of ladder axostylus axostyle, thick suitable with the barrel of gravelstone English tube support.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, its described transmission bar and magnetosheath are dynamically connected, be that magnetosheath is under electric motor driving, make by interlinkage and to transmit bar and elongate or shorten, join the chamber and the graphite induction heater that will transmit gravelstone inker upper end on the bar is sent into double-deck quartzy epitaxial chamber or return sample.
Described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, it also is applicable to the growth of polycrystalline, amorphous silicon carbide film material; Adopt different growth gasses, other different epitaxial material of can also growing is as aluminium nitride (AlN), gan (GaN), zinc oxide (ZnO); Adopt different substrate materials, also applicable to the silicon carbide on other substrate (SiC) heteroepitaxial growth.
Silicon carbide epitaxial growth of the present invention chamber is the double-deck silica tube chamber of a water-cooled, and the corrugated tube setter is to be used for regulating the central position of graphite induction heater in double-deck silica tube epitaxial chamber; One side of sample handing-over chamber is a bleeding point, and this bleeding point links to each other with extraction equipment (molecular pump and mechanical pump), and a side relative with it is sample handing-over door; Transmission has two kinds of functions with bracing or strutting arrangement, and the one, support graphite induction heater, the 2nd, transmit silicon carbide (SiC) sample or substrate on the handing-over graphite induction heater, the employing direct-current motor transmits the power of connection device as sample.
Wherein said silicon carbide sample epitaxial chamber is made up of vertical double-deck silica tube, porous reaction gas buffer decollator and copper spiral tube heater coil, is water coolant in the middle of the double-deck silica tube, flows from bottom to top; Porous reaction gas buffer decollator is made with stainless material, and it is positioned at the inside of the top flange dish of growth room, and the spiral tube heater coil is positioned at the middle part in the double-deck silica tube outside, and its two poles of the earth link to each other with two output terminals of radio-frequency power supply.
Sample transmits with bracing or strutting arrangement to be made up of graphite rod, silica tube, silica tube fixer and the stainless-steel vacuum transfer system of carbon-bearing silicon coating, there is a rotation magnetosheath bottom of vacuum transfer system, drive moving up and down of centibar by the rotation magnetosheath, thereby reach the purpose of transmitting and joining silicon carbide sample or substrate.
The corrugated tube setter is a relative position of regulating graphite induction heater and growth room's quartz wall with bracing or strutting arrangement by adjust transmitting, is located at a spool central position of silica tube epitaxial chamber.The corrugated tube setter is made up of corrugated tube, flange and three adjustable columns.The two ends of corrugated tube are flanges, and three adjustable column isogonisms are distributed on the three double thread seats of two flange outers.
Realize that the technical measures that the present invention taked have the following aspects: the one, the double-deck silica tube of water-cooled has been adopted in the sample grown chamber, realizes cold wall epitaxy; By using the slick silica tube of internal surface, effectively control reactant gases flow state and with the interaction-viscosity of locular wall; The 2nd, install the gas buffer decollator additional at the reaction chamber inlet mouth, enter behind the growth room and the gas turbulence that causes makes gas enter the smooth flow state rapidly from gas pipeline to eliminate reactant gases; The 3rd, adopt the spiral tube type of heating that places outside the growth room, eliminate the contaminating impurity that brings because of built-in spiral tube; The 4th, utilize the corrugated tube setter to adjust the relative position of graphite induction heater and quartz wall, reactant gases is symmetrically distributed in the indoor realization dynamic shaft of epitaxy.
The present invention is a kind of gas reaction growing apparatus, belong to CVD growing technology category, be to be manufacturing silicon carbide (SiC) epitaxial material specialized designs, except the growth that is used for the monocrystal SiC epitaxial material, this device also is applicable to the growth of polycrystalline, noncrystalline silicon carbide (SiC) thin-film material; Adopt different growth gasses, other different epitaxial material of can also growing is as aluminium nitride (AlN), gan (GaN), zinc oxide (ZnO) etc.; In addition, adopt different substrate materials, also applicable to the silicon carbide on other substrate (SiC) heteroepitaxial growth.
Characteristics of the present invention are the quartzy growth rooms of water cooled double-layered that adopted vertical structure, have axial symmetry, are easy to control air-flow condition, and the aura phenomenon does not take place the heating efficiency height; Another distinguishing feature is that extensibility is strong, by increasing the diameter of silica tube, can the epitaxy size silicon carbide (SiC) epitaxial material of bigger or small size multi-disc.
Description of drawings
Fig. 1 is the main body synoptic diagram of vertical high temperature high power silicon carbide of the present invention (SiC) epitaxial material manufacturing installation;
Fig. 2 is a vertical water cooled double-layered silica tube epitaxial chamber synoptic diagram of the present invention;
Fig. 3 is silicon carbide of the present invention (SiC) epitaxial growth reaction gas buffer decollator synoptic diagram; (a) porous gas buffering breaker plate, (b) notched support ring;
Fig. 4 is that sample of the present invention transmits and the bracing or strutting arrangement synoptic diagram;
Fig. 5 is the graphite rod supporting bar structure synoptic diagram that there is silicon carbide (SiC) coating sample transmission of the present invention and bracing or strutting arrangement upper end;
Fig. 6 is the little silica tube synoptic diagram on sample transmission of the present invention and the bracing or strutting arrangement;
Fig. 7 is the ladder axostylus axostyle synoptic diagram of sample transmission and bracing or strutting arrangement upper surface;
Fig. 8 is the gravelstone English tube fixer synoptic diagram of using on samples vertical transmission and the bracing or strutting arrangement; (a) being side-view, (b) is vertical view;
Fig. 9 is a sample handing-over of the present invention chamber synoptic diagram;
Figure 10 is a corrugated tube setter synoptic diagram of the present invention; (a) being side-view, (b) is vertical view;
Figure 11 is the graphite induction heater synoptic diagram that the present invention has silicon carbide (SiC) coating; (a) being vertical view, (b) is side cutaway view;
Figure 12 is a copper spiral tube radio frequency heater coil synoptic diagram of the present invention.
Embodiment
Fig. 1 is the main body synoptic diagram of vertical type high temperature high power silicon carbide epitaxy material manufacturing installation.This device is a high vacuum system, is formed by stainless steel and quartz material manufacturing.As shown in Figure 1, whole device partly is made up of the quartzy epitaxial chamber 1 of bilayer, sample transmission and bracing frame 2, graphite induction heater 3, corrugated tube setter 4, sample handing-over chamber 5, copper spiral tube heater coil 6 and plate shutdown valve 7 etc., wherein, sample transmits and bracing frame 2 vertical settings, be arranged with corrugated tube setter 4 on it, the bottom of sample transmission and bracing frame 2 is affixed by the lower port of flange circle and corrugated tube setter 4.The top of corrugated tube setter 4 is arranged with sample handing-over chamber 5 again, and the lower port of the upper port of corrugated tube setter 4 and sample handing-over chamber 5 is affixed; The top of sample handing-over chamber 5 is arranged with plate shutdown valve 7 again, and the upper port of sample handing-over chamber 5 and the lower port of plate shutdown valve 7 are affixed; The top of plate shutdown valve 7 is arranged with double-deck quartzy epitaxial chamber 1 again, and the lower port of the upper port of plate shutdown valve 7 and double-deck quartzy epitaxial chamber 1 is affixed; The top of sample transmission and bracing frame 2 is positioned at the cavity volume of double-deck quartzy epitaxial chamber 1, and the top of sample transmission and bracing frame 2 is positioned at the cavity volume center of double-deck quartzy epitaxial chamber 1.In the double-deck quartzy epitaxial chamber 1 graphite induction heater 3 is arranged, graphite induction heater 3 is horizontally disposed with, and the top of its lower surface center and sample transmission and bracing frame 2 joins.Double-deck quartzy epitaxial chamber 1 periphery circle middle part is with a circle copper spiral tube heater coil 6, between copper spiral tube heater coil 6 and growth room's 1 outer wall certain interval is arranged, and its two ends link to each other with two output terminals of radio-frequency power supply.
Double-deck quartzy epitaxial chamber 1, plate shutdown valve 7, sample handing-over chamber 5, corrugated tube setter 4 and sample transmission and bracing frame 2 are connected in turn up and down on the vertical axis.Sample transmission and bracing frame 2 are positioned on the common vertical axis.
The upper and lower end side of double-deck quartzy epitaxial chamber 1 is provided with out, water inlet pipe, and the top center place is connected to inlet pipe.
One side ports of sample handing-over chamber 5 is a sample introduction door, and the opposite side port is connected to extraction pipe.
Below more further to the structure of various piece and do as following description.
Quartzy epitaxial chamber 1 is a high-vacuum chamber, carries out the growth of silicon carbide (SiC) epitaxial material at this.As shown in Figure 2, quartzy epitaxial chamber 1 is made up of two different concentric silica tubes of diameter, and two ends are tightly connected with two steel flange dishes respectively up and down, and its China and foreign countries' silica tube is a water-lute, and interior silica tube is hermetic seal.Water coolant is flowed out by upper water-out mouth 15 by being positioned at the intermediate space that water-in 14 on the lower flange enters two silica tubes, and flow direction is from bottom to top.The bottom interface of growth room 1 is connected with plate shutdown valve 7.The inlet mouth 16 of reactant gases is positioned at the central position of growth room's top flange dish, and during epitaxy silicon carbide (SiC) material, the flow direction of reactant gases in interior silica tube is from top to bottom.Reach the smooth flow state as early as possible after making reactant gases enter interior silica tube, in the inside of upper flange plate gas buffer decollator 12 has been installed, its structure among the figure, is a porous gas buffering breaker plate (a) as shown in Figure 3, (b) is notched support ring.Gas buffer decollator 12 is made up of two portions, promptly the stainless steel annulus 123 of a stainless gas buffer breaker plate 121 and a band breach 124 is fixed on gas buffer breaker plate 121 in the upper flange plate of growth room 1 by the below with notched annulus 123.On the stainless steel gas buffering breaker plate 121 many apertures 122 are arranged, present centrosymmetry and distribute; Middle part at gas buffer breaker plate 121 does not have aperture, this position be positioned at inlet mouth 16 under.Because the diameter of intake ducting is very little, after reactant gases entered quartzy growth room 1, because of the diameter with silica tube differs too big, intensive turbulent flow phenomenon can appear in gas.After installing gas buffer decollator 12, gas percussion evenly enters in the silica tube epitaxial chamber 1 by the aperture 122 on the stainless steel gas buffering breaker plate 121 to the position of stainless steel gas buffering breaker plate 121 middle atresias then.
The structure of sample transmission and bracing or strutting arrangement 2 as shown in Figure 4, it is used for transmitting sample or substrate, and it is made of the gravelstone inker 22, gravelstone English tube support 23 and the gravelstone English tube support fixer 24 that transmit bar 21, magnetosheath 25, transmission bar vacuum jacket 26, carbon-bearing silicon coating.Transmitting bar 21 is dynamically connected with magnetosheath 25, can be that transmission bar 21 bottom screw rods and magnetosheath 25 internal chamber wall rib-loops match, rotation magnetosheath 25 can drive transmission bar 21 and move up and down, as before growing substrate is moved in the growth room 1, behind the growth ending sample sent back to handing-over chamber 5, thereby reach the purpose that realizes transmitting sample or substrate.Magnetosheath 25 is dynamically connected with the peripheral hardware motor.Transmit bar vacuum jacket 26 and be placed in magnetosheath 25 peripherys, its upper end is provided with flange circle 27, can be tightly connected with the lower port flange circle that is positioned at the corrugated tube setter 4 above it.The structure of the gravelstone inker 22 of carbon-bearing silicon coating, gravelstone English tube support 23, vertical transmission bar 21 and gravelstone English tube support fixer 24 is shown in respectively among Fig. 5, Fig. 6, Fig. 7 and Fig. 8.Fig. 5 is the structural representation of the gravelstone inker 22 of carbon-bearing silicon coating, its upper end is a frustum of a cone 223, the frustum of a cone 223 is used for stable support graphite induction heater 3, its stage casing 221 is right cylinders, its lower end 222 also is a right cylinder, the diameter of lower end 222 is littler than the diameter in stage casing 221, and the interior warp of the gravelstone English tube support 23 among lower end 222 and Fig. 6 is suitable, and the lower end 222 of gravelstone inker 22 can be placed in the gravelstone English tube support 23.The lower end of silica tube support 23 is inserted on the ladder axostylus axostyle 211 of transmission bar 21 upper ends shown in Figure 7, forms running fit between them.Gravelstone inker 22 is connected with transmission bar 21 indirectly by silica tube support 23, and purpose is to utilize quartzy lower thermal conductivity characteristic, reduces the thermal conduction by the vertical transmission bar, thereby reduces calorific loss.For better fixedly gravelstone English tube support 23, in transmission bar 21 upper surfaces a gravelstone English tube support fixer 24 has been installed, its structure wherein, (a) is side-view as shown in Figure 8, (b) is vertical view.Gravelstone English tube support fixer 24 is cylindric, cylindric internal diameter 242 is adaptive with the external diameter of gravelstone English tube support 23, cylindric lower end oral-lateral outer rim has a circle horizontal protrusion, the external diameter of the external diameter of projection and vertical transmission bar 21 is adaptive, on the plane of horizontal protrusion, be provided with plurality of fixed hole 241, affixed by device for fastening with transmission bar 21.The tube inwall of gravelstone English tube support fixer 24 and the gap of ladder axostylus axostyle 211, thick suitable with the barrel of gravelstone English tube support 23.The concrete installation site of graphite rod 22, silica tube support 23, vertical transmission bar 21, ladder axostylus axostyle 211 and gravelstone English tube support fixer 24 is referring to Fig. 1.Transmission bar 21, gravelstone inker 22, gravelstone English tube support 23 and gravelstone English tube support fixer 24 are sealed in the vacuum chamber of apparatus of the present invention formation.
Fig. 9 is the structural representation of sample handing-over of the present invention chamber 5, and load substrates and handing-over sample are here finished.Sample handing-over chamber 5 is that cruciform is cylindric, and the port of four band flange rings is arranged, and its upper port 53 links to each other with 7 sealings of plate shutdown valve, and lower port 54 is tightly connected with corrugated tube setter 4; The both sides port, one is that sample introduction door 52, is a bleeding point 55.
Figure 10 is the structural representation of corrugated tube setter 4.Wherein, (a) being side-view, (b) is vertical view.Utilize the certain twist angle of corrugated tube, realize regulatory function, to reach the purpose of regulating induction heater 3 positions by three angular distribution pillars 42 such as adjustings.The upper port 41 of corrugated tube setter 4 is tightly connected with the lower port 54 of sample handing-over chamber 5, and lower port 46 and transmission are connected with terminal port flange circle 27 on the bracing or strutting arrangement 2.
Figure 11 is the structural representation that the circular graphite induction heater 3 of coat of silicon carbide is arranged, and wherein, (a) is vertical view, (b) is side cutaway view.Graphite induction heater 3 is a cylindrical block, is to make with high purity graphite, because the graphite quality is soft, usually contains impurity and micropore in the body, in order to prevent to pollute, around surface coverage the about 1 millimeter carbofrax material of one layer thickness.There is a dark groove of 0.5 millimeter 31 its upper surface, is used for placing silicon carbide (SiC) substrate material, as silicon (Si) wafer etc.Its lower surface central part has a frustum of a cone groove 32, and the conical boss 223 of the upper surface of it and gravelstone inker 22 shown in Figure 5 forms and closely cooperates.
Figure 12 is the structural representation of copper spiral tube heater coil 6.Copper spiral tube heater coil 6 is to be made by the copper pipe of hollow.The two ends of copper pipe link to each other with two secondary coil output terminals of high-frequency induction heating power respectively.During heating, logical tap water cooling in the copper pipe, it places the mid-way, the outside of water cooled double-layered silica tube growth room 1, and with silica tube growth room 1 certain clearance is arranged.
Technical process of the present invention:
(1) substrate material is carried out matting;
(2) after substrate preparation work finishes, with motor driven rotary insulator 25 graphite induction heater 3 is placed in the sample handing-over chamber 5, open the sample introduction door 52 of sample handing-over chamber 5, substrate material is placed in the sample cell 31 of graphite induction heater 3, close sample introduction door 52; To join chamber 5 with mechanical pump and molecular pump by bleeding point 55 and be evacuated to vacuum, substrate material will be carried out necessary degasification, the work of drying;
(3) after vacuum tightness reaches requirement, open the valve of plate shutdown valve 7, the graphite induction heater 3 that substrate will be housed with motor driven rotary insulator 25 is delivered to sample grown chamber 1;
(4) according to the growing technology requirement of silicon carbide (SiC), select suitable growth temperature, pressure, feed desired reactant gases and carrier gas, carry out the epitaxy work of silicon carbide (SiC) according to silicon carbide (SiC) epitaxial growth steps by inlet mouth 16;
(5) behind silicon carbide (SiC) the epitaxy end-of-job, with driven by motor reverse rotation insulator 25, by transmitting bar 21 silicon carbide (SiC) sample of graphite induction heater 3 and wherein growth is retracted into sample handing-over chamber 5, closes plate shutdown valve 7 valves, make growth room's 1 maintenance vacuum state;
(6) sample is joined chamber 5 inflated with nitrogen (N
2) to barometric point, open sample introduction door 52, take out sample;
When (7) not working, close sample handing-over chamber 5, open plate shutdown valve 7 valves, continue to bleed, make total system maintain vacuum state by bleeding point 55.
The present invention has announced a kind of vertical high temperature high power silicon carbide (SiC) epitaxial material manufacturing installation.This invention is a high vacuum system, promptly can work under low pressure, also can work under normal pressure.The technology used in the present invention measure is: adopt the centrosymmetric vertical structure of axle; Because of the epitaxial growth temperature of silicon carbide higher (reaching as high as 1650 ℃), for avoiding unnecessary contaminating impurity, copper spiral tube well heater places the outside of silica tube growth room, promptly in the atmosphere; The gas buffer decollator is installed at the inlet mouth place, is reduced because of intake ducting diameter and silica tube growth room diameter differ the strong turbulent flow phenomenon that causes too greatly, and in the growth room formation smooth flow gas; Adopt Sample Room and the isolated technical scheme in growth room; Adopted the corrugated tube setter, guaranteed that technically graphite induction heater is in the axle central position of growth room.Characteristics of the present invention are the quartzy growth rooms of water cooled double-layered that adopted vertical structure, have axial symmetry, are easy to control air-flow condition, and the aura phenomenon does not take place the heating efficiency height; Extensibility is strong, by increasing the diameter of silica tube, can the epitaxy size silicon carbide (SiC) epitaxial material of bigger or small size multi-disc, have more economy.
Claims (11)
1, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, comprise double-deck quartzy epitaxial chamber, sample handing-over chamber, sample transmission and bracing or strutting arrangement, corrugated tube setter, plate shutdown valve, wherein, the sample transmission is vertical with bracing frame to be provided with, be arranged with the corrugated tube setter on it, the bottom of sample transmission and bracing frame is affixed by the lower port of flange circle and corrugated tube setter; The top of corrugated tube setter is arranged with sample handing-over chamber again, and the lower port of the upper port of corrugated tube setter and sample handing-over chamber is affixed; The top of sample handing-over chamber is arranged with the plate shutdown valve again, and the upper port of sample handing-over chamber and the lower port of plate shutdown valve are affixed; The top of plate shutdown valve is arranged with double-deck quartzy epitaxial chamber again, and the upper port of plate shutdown valve and the lower port of double-deck quartzy epitaxial chamber are affixed; The top of sample transmission and bracing frame is positioned at the cavity volume of double-deck quartzy epitaxial chamber, and the top of sample transmission and bracing frame is positioned at the cavity volume center of double-deck quartzy epitaxial chamber; Double-deck quartzy epitaxy is indoor graphite induction heater, and graphite induction heater is horizontally disposed with, and the top of its lower surface center and sample transmission and bracing frame joins; Double-deck quartzy epitaxial chamber periphery circle middle part is with a bronze medal spiral tube heater coil, between copper spiral tube heater coil and the growth room's outer wall certain interval is arranged; It is characterized in that: double-deck quartzy epitaxial chamber, plate shutdown valve, sample handing-over chamber, corrugated tube setter and sample transmission and bracing frame are connected in turn up and down on the vertical axis; Sample transmission and bracing frame are positioned on the common vertical axis.
2, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1, it is characterized in that: described sample transmission and bracing frame, comprise the little graphite rod, gravelstone English tube support and the gravelstone English tube support fixer that transmit bar, magnetosheath, transmission bar vacuum jacket, carbon-bearing silicon coating, wherein, transmitting bar and magnetosheath is dynamically connected, transmit the bar vacuum jacket and be placed in the magnetosheath periphery, its upper end is provided with the flange circle, can be tightly connected with the lower port flange circle that is positioned at the corrugated tube setter above it; The upper end of the little graphite rod of carbon-bearing silicon coating is a frustum of a cone, the frustum of a cone is connected with graphite induction heater, its stage casing is a right cylinder, its lower end also is a right cylinder, the cylindrical diameter in lower end is littler than the cylindrical diameter in stage casing, and the lower end right cylinder inserts in the upper end inner core of cylindric gravelstone English tube support; The lower end inner core of gravelstone English tube support is placed on the ladder axostylus axostyle that transmits the bar upper end, and the lower end outer side inserts the gravelstone English tube support fixer that transmits the bar upper surface, forms running fit between them; Magnetosheath and peripheral hardware motor are dynamically connected; Transmission bar, little graphite rod, gravelstone English tube support and gravelstone English tube support fixer are sealed in the vacuum chamber of device formation.
3, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1, it is characterized in that: the quartzy epitaxial chamber of described bilayer, form by two concentric silica tubes that diameter is different, the upper end is with flangeseal, and the lower end is tightly connected with flange circle and plate shutdown valve; Following end flanges circle side is provided with water inlet pipe, and upper flanges dish side is provided with rising pipe, and water inlet pipe, rising pipe communicate with the mezzanine space that two concentric silica tubes constitute; The central position of upper flanges dish is provided with inlet pipe, and the inner chamber of upper flanges dish is provided with the gas buffer decollator.
4, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 3, it is characterized in that: described gas buffer decollator, form by two portions, a gas buffer breaker plate and a notched annulus are fixed on the gas buffer breaker plate in the upper flanges dish of growth room with notched annulus by the below; Many apertures are arranged on the gas buffer breaker plate, the distribution that is centrosymmetric, middle portion, be positioned at inlet mouth under do not have aperture.
5, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1, it is characterized in that: described sample handing-over chamber, for cruciform cylindric, the port that four band flange rings are arranged, its upper port links to each other with the sealing of plate shutdown valve, and lower port and corrugated tube setter are tightly connected; Both sides port, one side ports are sample introduction door, and the opposite side port is connected to extraction pipe.
6, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1, it is characterized in that: described corrugated tube setter, the flange ring horizontal-extending of its upper and lower port has a plurality of legs, the leg uniform distribution, be provided with the hole, be fixed with pillar in the hole; Adjustable fixing two ends device for fastening to change the relative distance of upper and lower port flange ring, is regulated the position of graphite induction heater in the silica tube growth room.
7, according to claim 3 or 4 described a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material, it is characterized in that: the water-cooling structure of the quartzy epitaxial chamber of described bilayer, water coolant are mobile from bottom to top, and reactant gases flows from top to bottom; At inlet mouth the gas buffer decollator is installed, has eliminated the strong turbulence phenomenon of reactant gases, and at the indoor formation smooth flow of epitaxy gas.
8, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1, it is characterized in that: described graphite induction heater, it is a cylindrical block, there is a groove its upper surface, be used for placing the silicon carbide substrates material, the lower surface central part has a frustum of a cone groove, and the conical boss of frustum of a cone groove and gravelstone inker upper surface forms and closely cooperates.
9, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 2, it is characterized in that: described gravelstone English tube support fixer, for cylindric, the external diameter of cylindric internal diameter and gravelstone English tube support is adaptive, cylindric lower end oral-lateral outer rim has a circle horizontal protrusion, the external diameter of the external diameter of projection and vertical transmission bar is adaptive, is provided with the plurality of fixed hole on the plane of horizontal protrusion, and is affixed with the transmission bar by device for fastening; The tube inwall of gravelstone English tube support fixer and the gap of ladder axostylus axostyle, thick suitable with the barrel of gravelstone English tube support.
10, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 2, it is characterized in that: described transmission bar and magnetosheath are dynamically connected, be that magnetosheath is under electric motor driving, make by interlinkage and to transmit bar and elongate or shorten, join the chamber and the graphite induction heater that will transmit gravelstone inker upper end on the bar is sent into double-deck quartzy epitaxial chamber or return sample.
11, a kind of manufacturing device of vertical high temperature high power silicon carbide epitaxy material according to claim 1 is characterized in that: also be applicable to the growth of polycrystalline, amorphous silicon carbide film material; Adopt different growth gasses, other different epitaxial material of can also growing is as aluminium nitride, gan, zinc oxide; Adopt different substrate materials, also applicable to the silicon carbide heteroepitaxial growth on other substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100691909A CN1312079C (en) | 2004-07-07 | 2004-07-07 | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100691909A CN1312079C (en) | 2004-07-07 | 2004-07-07 | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1718559A true CN1718559A (en) | 2006-01-11 |
| CN1312079C CN1312079C (en) | 2007-04-25 |
Family
ID=35930520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100691909A Expired - Fee Related CN1312079C (en) | 2004-07-07 | 2004-07-07 | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1312079C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591803B (en) * | 2008-05-28 | 2011-05-11 | 中国科学院半导体研究所 | High-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
| CN102703966A (en) * | 2012-05-28 | 2012-10-03 | 中国科学院力学研究所 | Device for growing carbonization silicon single crystal by using seed crystal temperature gradient method |
| CN103184514A (en) * | 2013-04-11 | 2013-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystal growing furnace |
| CN104233460A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD equipment provided with reaction chamber |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465335B (en) * | 2010-11-18 | 2014-07-16 | 南京大学 | Heating device for semiconducting material hot wall epitaxy growth system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE9502288D0 (en) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
| SE9603586D0 (en) * | 1996-10-01 | 1996-10-01 | Abb Research Ltd | A device for epitaxially growing objects and method for such a growth |
| US6039812A (en) * | 1996-10-21 | 2000-03-21 | Abb Research Ltd. | Device for epitaxially growing objects and method for such a growth |
| CN2438725Y (en) * | 2000-09-22 | 2001-07-11 | 中国科学院半导体研究所 | Oxidation film epitaxial equipment |
-
2004
- 2004-07-07 CN CNB2004100691909A patent/CN1312079C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591803B (en) * | 2008-05-28 | 2011-05-11 | 中国科学院半导体研究所 | High-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
| CN102169810B (en) * | 2010-12-27 | 2013-07-03 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
| CN102703966A (en) * | 2012-05-28 | 2012-10-03 | 中国科学院力学研究所 | Device for growing carbonization silicon single crystal by using seed crystal temperature gradient method |
| CN102703966B (en) * | 2012-05-28 | 2015-11-04 | 中国科学院力学研究所 | A kind of device of seed temperature gradient method growing silicon carbide single crystal |
| CN103184514A (en) * | 2013-04-11 | 2013-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Crystal growing furnace |
| CN103184514B (en) * | 2013-04-11 | 2016-07-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | crystal growing furnace |
| CN104233460A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD equipment provided with reaction chamber |
| CN104233460B (en) * | 2013-06-09 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD equipment provided with reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1312079C (en) | 2007-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110129885B (en) | Silicon carbide crystal and preparation method thereof | |
| CN111029246B (en) | Method for reducing triangular defects in SiC epitaxial layer | |
| CN1333438C (en) | Coaxial air intake for acquiring uniform wide-band gap semiconductor thin film | |
| CN103199008A (en) | Homoepitaxial method on zero offset 4H-SiC substrate | |
| CN107059130A (en) | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide | |
| CN1312079C (en) | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material | |
| CN103422164A (en) | Method for controlling N-type 4H-SiC homogenous epitaxial doping | |
| CN108707966A (en) | A kind of low nitrogen content SiC single crystal grower and its application | |
| WO2020155669A1 (en) | Silicon carbide single crystal growth apparatus and silicon carbide single crystal preparation device | |
| CN102747418A (en) | High-temperature large area silicon carbide epitaxial growth device and treatment method | |
| CN104779141A (en) | Preparation method of low-deflection angle silicon carbide homogeneous epitaxial material | |
| CN104233460B (en) | Reaction chamber and MOCVD equipment provided with reaction chamber | |
| CN102304698B (en) | Device for growing silicon carbide crystal by high-temperature chemical vapor deposition (HTCVD) method | |
| CN2730890Y (en) | Horizontal ion implantation silicon carbide high-temp. annealing device | |
| CN101591803B (en) | High-temperature carborundum double-chamber hot wall type epitaxial growth device | |
| CN102304763B (en) | Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device | |
| CN208717470U (en) | A kind of low nitrogen content SiC single crystal grower | |
| CN105006427B (en) | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer | |
| CN210262076U (en) | Crucible assembly for crystal growth | |
| CN214937965U (en) | Quartz reaction cavity for gallium nitride material growth | |
| CN101240445A (en) | Heater rotating device used for silicon carbide epitaxy | |
| CN112635303B (en) | Preparation process of silicon carbide semiconductor material capable of being produced in large scale | |
| CN1834286A (en) | Growth appts. of Chemical gaseous phase deposition | |
| CN2743375Y (en) | Vertical ion injection silicone carbide high temperature annealing device | |
| CN104538289A (en) | Multi-chip silicon carbide semiconductor material manufacturing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |