CN214937965U - Quartz reaction cavity for gallium nitride material growth - Google Patents
Quartz reaction cavity for gallium nitride material growth Download PDFInfo
- Publication number
- CN214937965U CN214937965U CN202120412929.0U CN202120412929U CN214937965U CN 214937965 U CN214937965 U CN 214937965U CN 202120412929 U CN202120412929 U CN 202120412929U CN 214937965 U CN214937965 U CN 214937965U
- Authority
- CN
- China
- Prior art keywords
- gallium
- reaction
- liquid
- shaping
- reaction cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a used quartzy reaction cavity of gallium nitride material growth, one end shaping hydrogen chloride entry, other end shaping gallium chloride export, it adds the pipe to establish gallium liquid on the quartzy reaction boat, a plurality of reaction cavities of shaping in the quartzy reaction boat, a plurality of reaction cavities are circumference array distribution, the shaping of center department adds the gallium liquid distributing pipe that the pipe is linked together with gallium liquid between a plurality of reaction cavities, the shaping inlet that is linked together with each reaction cavity on the gallium liquid distributing pipe, shaping baffle between hydrogen chloride entry and each reaction cavity, the air inlet duct that a plurality of circumference arrays of shaping were arranged on the baffle, shaping gas joins the chamber between gallium chloride export and each reaction cavity. The utility model discloses a reaction cavity falls into the stranded air current with the single strand air current originally, and single gallium liquid entry is by gallium liquid distributing pipe evenly distributed, flows and reacts in each reaction cavity, greatly increased gaseous area of contact and the contact time that contacts with gallium liquid to high efficiency conversion gallium chloride.
Description
The technical field is as follows:
the utility model relates to a semiconductor processing technology field, in particular to a used quartz reaction cavity of gallium nitride material growth.
Background art:
gallium nitride (GaN) materials, as the most important third-generation semiconductors, have the characteristics of wide bandgap, high breakdown voltage, high electron mobility, stable chemical properties and the like, and are widely applied to the preparation of blue-light LEDs and high-temperature high-frequency high-power electronic devices. Hydride Vapor Phase Epitaxy (HVPE) technology, hereinafter abbreviated as HVPE (HVPE), is one of the current hot methods for preparing GaN materials due to its high growth rate and good crystal quality.
The technological process of HVPE gallium nitride growth includes two steps:
the first step is as follows: introducing hydrogen chloride gas, and carrying out chemical reaction with the liquid gallium contained in the gallium boat to generate gallium chloride gas;
the second step is that: the gallium chloride gas and ammonia gas are subjected to chemical reaction in the quartz reaction chamber to generate gallium nitride on the substrate.
From the above process flow, it can be found that the chemical reaction efficiency of the hydrogen chloride gas and the liquid gallium at the first step of the gallium boat to convert the liquid gallium into gallium chloride directly affects the growth rate of the second step of gallium nitride. However, in order to obtain high efficiency at the gallium boat, the key points are the sectionalization of the structure of the epitaxial whole quartz chamber and the overall sealing performance, but the existing global HVPE quartz reaction chamber can be divided into a vertical reaction chamber or a horizontal reaction chamber according to the flowing direction of the airflow on the surface of the substrate. The single gallium boat in the two reaction cavities is limited by the gallium nitride chemical reaction process of the quartz reaction cavity, so that the area of the gallium boat is always limited, the contact area and the contact time of hydrogen chloride gas and gallium liquid are limited, and the gallium chloride gas cannot be converted at high efficiency.
The utility model has the following contents:
the utility model provides a used quartz reaction cavity of gallium nitride material growth has solved the problem that the gaseous conversion efficiency of gallium chloride is low among the prior art.
The technical solution of the utility model is as follows: a quartz reaction cavity for growing gallium nitride materials comprises a quartz reaction boat, wherein one end of the quartz reaction boat is formed with a hydrogen chloride inlet, the other end of the quartz reaction boat is formed with a gallium chloride outlet, a gallium liquid adding pipe is arranged on the quartz reaction boat, a plurality of reaction cavities communicated with the hydrogen chloride inlet and the gallium chloride outlet are formed in the quartz reaction boat, the reaction cavities are distributed in a circumferential array mode, a gallium liquid distribution pipe communicated with the gallium liquid adding pipe is formed in the center of the reaction cavities, liquid inlets communicated with the reaction cavities are formed in the gallium liquid distribution pipe, a partition plate is formed between the hydrogen chloride inlet and the reaction cavities, a plurality of air inlet grooves distributed in a circumferential array mode are formed in the partition plate, and a gas converging cavity is formed between the gallium chloride outlet and the reaction cavities.
Preferably, the liquid inlets are spirally and uniformly distributed along the tube wall of the gallium liquid distribution tube, and spiral liquid inlet grooves communicated with the liquid inlets are formed in the outer tube wall of the gallium liquid distribution tube.
Preferably, the gallium liquid adding pipes comprise two gallium liquid adding pipes which are respectively positioned at two ends of the gallium liquid distributing pipe.
Preferably, two ends of the spiral liquid inlet groove extend to two ends close to the gallium liquid distribution pipe.
Preferably, the groove section of the spiral liquid inlet groove is trapezoidal.
The beneficial effects of the utility model reside in that: the quartz reaction cavity of the utility model changes the traditional single reaction cavity structure, and designs a plurality of reaction cavities distributed in a circumferential array, thereby increasing the reaction area of the gallium boat, the hydrogen chloride gas uniformly enters each reaction cavity through the air inlet grooves arranged in a plurality of circumferential arrays formed on the hydrogen chloride inlet and the clapboard, the liquid gallium enters the gallium liquid distribution pipe through the gallium liquid adding pipe, and then uniformly flows to each reaction cavity through each liquid inlet and the spiral liquid inlet groove, and fully reacts with the hydrogen chloride gas to generate the gallium chloride gas, the gallium chloride gas flows out from each reaction cavity and joins to the gas joining cavity, and finally flows out from the gallium chloride outlet, in the whole process, the original single-stranded gas flow is divided into a plurality of gas flows, the single gallium liquid inlet is uniformly distributed by the gallium liquid distribution pipe, flows and reacts in each reaction cavity, and the contact area and the contact time of the gas and the gallium liquid are greatly increased, thereby converting gallium chloride with high efficiency.
Description of the drawings:
fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
fig. 3 is a schematic cross-sectional view of the present invention.
In the figure: 1. a quartz reaction boat; 1-1, a reaction cavity; 1-2, a partition board; 1-3, an air inlet groove; 1-4, a gas converging cavity; 2. a hydrogen chloride inlet; 3. a gallium chloride outlet; 4. a gallium liquid adding pipe; 5. a gallium liquid distribution pipe; 5-1, liquid inlet; 5-2, spiral liquid inlet groove.
The specific implementation mode is as follows:
the quartz reaction chamber for growing gallium nitride material of the present invention will be further described with reference to the accompanying drawings 1-3.
The utility model relates to a quartz reaction cavity for growing gallium nitride materials, which comprises a quartz reaction boat 1, one end of the quartz reaction boat 1 is formed with a hydrogen chloride inlet 2, the other end is formed with a gallium chloride outlet 3, the quartz reaction boat 1 is provided with a gallium liquid adding pipe 4, a plurality of reaction cavities 1-1 communicated with the hydrogen chloride inlet 2 and the gallium chloride outlet 3 are formed in the quartz reaction boat 1, a plurality of reaction cavities 1-1 are distributed in a circumferential array, a gallium liquid distributing pipe 5 communicated with the gallium liquid adding pipe 4 is formed in the center between the reaction cavities 1-1, a liquid inlet 5-1 communicated with each reaction cavity 1-1 is formed on the gallium liquid distributing pipe 5, a clapboard 1-2 is formed between the hydrogen chloride inlet 2 and each reaction cavity 1-1, a plurality of air inlet grooves 1-3 distributed in a circumferential array are formed on the clapboard 1-2, a gas converging cavity 1-4 is formed between the gallium chloride outlet 3 and each reaction cavity 1-1.
Furthermore, the liquid inlets 5-1 are spirally and uniformly distributed along the pipe wall of the gallium liquid distribution pipe 5, and spiral liquid inlet grooves 5-2 communicated with the liquid inlets 5-1 are formed on the outer pipe wall of the gallium liquid distribution pipe 5. Liquid gallium enters the gallium liquid distribution pipe 5 through the gallium liquid adding pipe 4, then flows into the spiral liquid inlet groove 5-2 through each liquid inlet 5-1 on the gallium liquid distribution pipe 5, finally flows to each reaction cavity 1-1 uniformly through the spiral liquid inlet groove 5-2, and can be uniformly distributed in the reaction cavity 1-1.
Furthermore, the gallium liquid adding pipes 4 comprise two gallium liquid adding pipes, and the two gallium liquid adding pipes are respectively positioned at two ends of the gallium liquid distributing pipe 5.
Furthermore, two ends of the spiral liquid inlet groove 5-2 extend to two ends close to the gallium liquid distribution pipe 5.
Furthermore, the section of the spiral liquid inlet groove 5-2 is trapezoidal.
The utility model discloses a theory of operation is: a plurality of reaction cavities 1-1 distributed in a circumferential array are designed, hydrogen chloride gas uniformly enters each reaction cavity 1-1 through a hydrogen chloride inlet 2 and a plurality of air inlet grooves 1-3 formed in the partition plate 1-2 and distributed in a circumferential array, liquid gallium enters a gallium liquid distribution pipe 5 through a gallium liquid adding pipe 4 and then uniformly flows to each reaction cavity 1-1 through each liquid inlet 5-1 and a spiral liquid inlet groove 5-2 to fully react with the hydrogen chloride gas to generate gallium chloride gas, the gallium chloride gas flows out of each reaction cavity 1-1 and is converged to a gas converging cavity 1-4, and finally flows out of a gallium chloride outlet 3.
The above description is only a preferred embodiment of the present invention, and all other embodiments obtained by those skilled in the art without any creative effort shall fall within the protection scope of the present invention.
Claims (5)
1. The utility model provides a used quartzy reaction cavity of gallium nitride material growth, its is including quartzy reaction boat (1), the shaping of quartzy reaction boat (1) one end has hydrogen chloride entry (2), and the shaping of the other end has gallium chloride export (3), be equipped with gallium liquid on the quartzy reaction boat (1) and add pipe (4), its characterized in that: a plurality of reaction cavities (1-1) communicated with a hydrogen chloride inlet (2) and a gallium chloride outlet (3) are formed in the quartz reaction boat (1), the reaction cavities (1-1) are distributed in a circumferential array, a gallium liquid distribution pipe (5) communicated with a gallium liquid adding pipe (4) is formed in the center among the reaction cavities (1-1), a liquid inlet (5-1) communicated with each reaction cavity (1-1) is formed on the gallium liquid distribution pipe (5), a clapboard (1-2) is formed between the hydrogen chloride inlet (2) and each reaction cavity (1-1), a plurality of air inlet grooves (1-3) which are arranged in a circumferential array are formed on the partition plate (1-2), and gas confluence cavities (1-4) are formed between the gallium chloride outlet (3) and each reaction cavity (1-1).
2. The quartz reaction chamber of claim 1, wherein: the liquid inlets (5-1) are spirally and uniformly distributed along the tube wall of the gallium liquid distribution tube (5), and spiral liquid inlet grooves (5-2) communicated with the liquid inlets (5-1) are formed in the outer tube wall of the gallium liquid distribution tube (5).
3. The quartz reaction chamber of claim 1, wherein: the gallium liquid adding pipes (4) comprise two gallium liquid adding pipes which are respectively positioned at two ends of the gallium liquid distributing pipe (5).
4. The quartz reaction chamber of claim 2, wherein: and two ends of the spiral liquid inlet groove (5-2) extend to two ends close to the gallium liquid distribution pipe (5).
5. The quartz reaction chamber of claim 2, wherein: the cross section of the spiral liquid inlet groove (5-2) is trapezoidal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120412929.0U CN214937965U (en) | 2021-02-23 | 2021-02-23 | Quartz reaction cavity for gallium nitride material growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120412929.0U CN214937965U (en) | 2021-02-23 | 2021-02-23 | Quartz reaction cavity for gallium nitride material growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214937965U true CN214937965U (en) | 2021-11-30 |
Family
ID=79097735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120412929.0U Active CN214937965U (en) | 2021-02-23 | 2021-02-23 | Quartz reaction cavity for gallium nitride material growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214937965U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115385374A (en) * | 2022-08-26 | 2022-11-25 | 神华准能资源综合开发有限公司 | Preparation device and preparation method of gallium trichloride |
-
2021
- 2021-02-23 CN CN202120412929.0U patent/CN214937965U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115385374A (en) * | 2022-08-26 | 2022-11-25 | 神华准能资源综合开发有限公司 | Preparation device and preparation method of gallium trichloride |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| CN214937965U (en) | Quartz reaction cavity for gallium nitride material growth | |
| CN201626981U (en) | Gas inlet device of chemical vapor phase deposition epitaxy equipment | |
| CN208776871U (en) | A kind of gallium boat structure using hydride gas-phase epitaxy method growing gallium nitride material | |
| US7011711B2 (en) | Chemical vapor deposition reactor | |
| CN1681088A (en) | Coaxial air intake for acquiring uniform wide-band gap semiconductor thin film | |
| CN110952135B (en) | Polycrystalline gallium nitride growth device | |
| CN112126976B (en) | Gallium boat structure for hydride gas phase epitaxy | |
| CN104846438A (en) | Growth method of aluminum indium nitride film | |
| CN109354023B (en) | Monosilane thermal decomposition furnace with double-layer cooling jacket and production process | |
| US11183385B2 (en) | Method for passivating silicon carbide epitaxial layer | |
| CN101591803B (en) | High-temperature carborundum double-chamber hot wall type epitaxial growth device | |
| CN116427023A (en) | Gas distribution device for epitaxial equipment | |
| CN213327938U (en) | HVPE exhaust, gallium separation collection device | |
| CN105986314B (en) | A kind of reactor for vapor phase epitaxial growth semiconductor single crystal material | |
| CN212152434U (en) | Heatable honeycomb formula multichannel inlet structure | |
| CN1312079C (en) | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material | |
| CN212713845U (en) | Reaction chamber structure of epitaxial growth equipment | |
| CN220443794U (en) | Mixing device for silicon carbide epitaxial reaction gas | |
| Liu et al. | Design of large horizontal gallium nitride hydride vapor-phase epitaxy equipment and optimization of process parameters | |
| CN202610321U (en) | Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor | |
| CN101383279A (en) | HVPE reactor for preparing nitride semiconductor substrate | |
| CN210856409U (en) | Quartzy mixed shower nozzle of integrative reaction of multicavity room | |
| CN205680660U (en) | Prepare the equipment of HEMT epitaxial wafer | |
| CN112239889B (en) | Method for slowing down gallium nitride deposited on tube wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |