CN205680660U - Prepare the equipment of HEMT epitaxial wafer - Google Patents
Prepare the equipment of HEMT epitaxial wafer Download PDFInfo
- Publication number
- CN205680660U CN205680660U CN201620301984.1U CN201620301984U CN205680660U CN 205680660 U CN205680660 U CN 205680660U CN 201620301984 U CN201620301984 U CN 201620301984U CN 205680660 U CN205680660 U CN 205680660U
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- layer
- epitaxial wafer
- hemt
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The utility model proposes a kind of equipment preparing HEMT epitaxial wafer, the equipment with several reaction chambers is provided, nucleating layer is fixed on a reaction chamber indoor growing, cushion is fixed on another chamber tumor growth, channel layer and barrier layer are fixed on other reaction chamber indoor growings, the residue volatilization melt back impact on other thin layer quality in reaction chamber can be effectively prevented, thus improve the crystal mass of HEMT epitaxial layer, reduce the current collapse effect existing for HEMT device and leakage current effects further.
Description
Technical field
This utility model relates to field of manufacturing semiconductor devices, particularly relates to a kind of equipment preparing HEMT epitaxial wafer.
Background technology
Owing to HEMT (High Electron Mobility Transistor, HEMT) device has
The advantages such as standby breakdown characteristics is high, switching speed is fast, conducting resistance is little, therefore, it is in power management, wind-power electricity generation, solar-electricity
The field of power electronics such as pond, electric automobile has a wide range of applications.
Traditional HEMT is usually GaN base HEMT, generally includes Sapphire Substrate for preparing the HEMT epitaxial wafer of HEMT
And sequentially form nucleating layer (usually AlN) on a sapphire substrate, cushion (GaN usually adulterated), channel layer
(usually GaN) and barrier layer (usually AlGaN), wherein, in order to allow cushion have more preferable insulating properties, it usually needs right
Cushion is doped with so that it becomes insulant.
Along with put into practice, apply further deeply, traditional GaN base HEMT device expose successively current collapse effect,
The quality problems such as leakage current effects, self-heating effect and owing to Sapphire Substrate is difficult to brought cost in large size
Problem, the problems referred to above seriously govern development further and the application of GaN base HEMT device.Wherein, current collapse effect and gesture
The crystal mass of the surface state of barrier layer, the insulating properties of cushion and channel layer is directly related；Leakage current effects is exhausted with cushion
Edge, crystal mass and lattice defect are the most closely related, and the poor cushion of insulating properties easily produces parasitic conductance and by slow
Rush the leakage current of layer；Self-heating effect is closely related with the heat conductivility of the substrate that GaN base HEMT device is used, sapphire
The heat-conducting effect of substrate is the best, directly affects the performance and used life of GaN base HEMT device.
In order to solve the problems referred to above, the Scientific Research Workers of this area proposes various passivating method: silicon nitride passivation side
Method alleviates the current collapse effect caused by the surface state of cushion to a certain extent；The insulating properties of cushion is not also by
Carbon or Fe2O3 doping with concentration are significantly improved, and this alleviates to a certain extent by the electricity caused by the insulating properties of cushion
Stream pull-in effect and leakage current effects；The crystal mass of cushion and lattice defect are along with the introducing of nucleating layer and graphically indigo plant treasured
Development at the bottom of stone lining is progressively improved, and the crystal mass of channel layer progressively improves also with buffer layer crystal quality
Arrive the improvement synchronized；Poor thermal conductivity and the Sapphire Substrate in large size that is difficult to is just the best, cheap by heat conductivity,
The silicon being prone in large size is replaced.
Although using silicon substrate to have, heat conductivity is good, cheap and the advantage such as applicable large scale production, but silicon lining
Still there is series of problems in the end.GaN base HEMT epitaxial wafer is in process of production at present, is all to depend in same reaction chamber
Secondary growth nucleating layer (usually AlN), cushion (GaN of doping), channel layer (GaN) and barrier layer (AlGaN), but, raw
The reaction chamber growing GaN material can remain a small amount of Ga or GaN, owing to existing GaN base HEMT epitaxial wafer uses silicon lining
The end, replaces Sapphire Substrate, and therefore, Ga or GaN of residual can volatilize melt back to silicon during subsequent batches forms nucleating layer
The surface of substrate, and reacting with silicon substrate, this not only affects the growth of nucleating layer and cushion, also can cause channel layer and
The decline of barrier layer crystal mass, thus affect the yield of GaN base HEMT device；Additionally, due to cushion needs to be doped
Insulating barrier could be formed, after doping completes, reaction chamber can remain a small amount of doped chemical such as carbon or ferrum, mixing of residual
Miscellaneous element is totally unfavorable to growth channel layer and barrier layer, can seriously reduce the performance of GaN base HEMT device.
Utility model content
One of the purpose of this utility model is to provide a kind of equipment preparing HEMT epitaxial wafer, to solve the Ga unit of melt back
The HMET epitaxial layer crystal mass that element and silicon substrate react and impurity pollutes subsequent thin film layer and causes declines
Problem.
In order to solve the problems referred to above, the utility model proposes a kind of equipment preparing HEMT epitaxial wafer, be used for preparing
HEMT epitaxial wafer, including m reaction chamber, wherein m is natural number, and m >=3.
Further, in the described equipment preparing HEMT epitaxial wafer, also include n transmission chamber, be connected to m reaction
Between chamber, being used for transmitting support substrate, wherein n is natural number, and n < m.
Further, in the described equipment preparing HEMT epitaxial wafer, also include i mechanical arm, described in each
Transmission intracavity is at least provided with a mechanical arm, and wherein i is natural number.
Further, in the described equipment preparing HEMT epitaxial wafer, the equipment of the described HEMT of preparation epitaxial wafer is
MOCVD。
Further, in the described equipment preparing HEMT epitaxial wafer, including 3 reaction chambers, respectively first is anti-
Chamber, the second reaction chamber and the 3rd reaction chamber, described first reaction chamber is answered to be used for being formed nucleating layer, described second reaction
Chamber is used for being formed cushion, and described 3rd reaction chamber is used for forming channel layer and barrier layer.
Further, in the described equipment preparing HEMT epitaxial wafer, including 4 reaction chambers, respectively first is anti-
Chamber, the second reaction chamber, the 3rd reaction chamber and the 4th reaction chamber, described first reaction chamber is answered to be used for forming nucleation
Layer, described second reaction chamber is used for being formed cushion, and described 3rd reaction chamber is used for being formed channel layer, described 4th reaction
Chamber is used for forming barrier layer.
Compared with prior art, this utility model provides the equipment with at least three reaction chamber, is fixed by nucleating layer
In a reaction chamber indoor growing, cushion is fixed on another chamber tumor growth, channel layer and barrier layer are fixed on it
His reaction chamber indoor growing, can be effectively prevented the residue volatilization melt back shadow to other thin layer quality in reaction chamber
Ring, thus improve the crystal mass of HEMT epitaxial layer, reduce the current collapse effect existing for HEMT device and electric leakage further
Stream effect.Additionally it is possible to doped chemical melt back is in channel layer and barrier layer when avoiding undoped buffer layer, reduce channel layer and
The electric conductivity of barrier layer, improves channel layer and the performance of barrier layer.
Accompanying drawing explanation
Fig. 1 is the flow chart of this utility model a kind of HEMT epitaxial wafer manufacture method；
Fig. 2 is the structural representation of the equipment preparing HEMT epitaxial wafer in this utility model embodiment one；
Fig. 3 to Fig. 9 is the structural representation in this utility model embodiment one in the manufacturing process of HEMT epitaxial wafer；
Figure 10 is the generalized section after this utility model HEMT epitaxial wafer completes；
Figure 11 is the structural representation of the equipment preparing HEMT epitaxial wafer in this utility model embodiment two；
Figure 12 to Figure 15 is the structural representation in this utility model embodiment two in the manufacturing process of HEMT epitaxial wafer.
Detailed description of the invention
Below in conjunction with schematic diagram, the equipment of the HEMT of preparation epitaxial wafer of the present utility model is described in more detail, its
In illustrate preferred embodiment of the present utility model, it should be appreciated that those skilled in the art can revise described here practicality
Novel, and still realize advantageous effects of the present utility model.Therefore, description below is appreciated that for people in the art
Member's is widely known, and is not intended as restriction of the present utility model.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make this utility model chaotic due to unnecessary details.Will be understood that in any practical embodiments
Exploitation in, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, such as according to relevant system or relevant business
The restriction of industry, is changed into another embodiment by an embodiment.Additionally, it should think this development be probably complicated and
Time-consuming, but it is only routine work to those skilled in the art.
Referring to the drawings this utility model the most more particularly described below in the following passage.According to following explanation and power
Profit claim, advantage of the present utility model and feature will be apparent from.It should be noted that, accompanying drawing all use the form simplified very much and
All use non-ratio accurately, only in order to purpose convenient, aid illustration this utility model embodiment lucidly.
As it is shown in figure 1, this utility model provides the manufacture method of a kind of HEMT epitaxial wafer, including step:
S100: providing equipment, described equipment includes m reaction chamber, and wherein m is natural number, and m >=3；
S200: provide and support substrate, described support substrate is placed in the first reaction chamber, and in the first reaction chamber
Form nucleating layer；
S300: will be formed with the support substrate transport of described nucleating layer in the second reaction chamber, and at the second reaction chamber
Room is formed cushion, and described cushion is doped；
S400: will be formed with in the support substrate transport extremely residue reaction chamber of described nucleating layer and cushion, and surplus
Remaining reaction chamber is formed residue thin layer.
This utility model uses the equipment comprising more than three reaction chambers, it is possible to nucleating layer is fixed on a reaction chamber
Indoor growing, is fixed on cushion another chamber tumor growth, channel layer and barrier layer is fixed in other reaction chambers
Growth, can be effectively prevented the residue volatilization melt back impact on other thin layer quality in reaction chamber, thus improve
The crystal mass of HEMT epitaxial layer, reduces the current collapse effect existing for HEMT device and leakage current effects further.Additionally,
When can also avoid undoped buffer layer, doped chemical melt back is in channel layer and barrier layer, reduces channel layer and the conduction of barrier layer
Performance, improves channel layer and the performance of barrier layer.
Describe in detail outside the preparation HEMT that this utility model provides below in conjunction with Fig. 2 to Figure 15 and two specific embodiments
Prolong the equipment of sheet.
Embodiment one
As shown in Figure 2, it is proposed that a kind of equipment preparing HEMT epitaxial wafer, including m reaction chamber and n transmission chamber,
Wherein m, n are natural number, and m>=3, n<m.
In the present embodiment, m=3, n=1, three reaction chambers are respectively first reaction chamber the 21, second reaction chamber
22 and the 3rd reaction chamber 23,1 transmission chamber 10 is positioned at the first reaction chamber the 21, second reaction chamber 22 and the 3rd reaction chamber
Between 23.Wherein, three reaction chambers are independent mutually when reacting, and are independent of each other.It is concrete as in figure 2 it is shown, first is anti-
Chamber the 21, second reaction chamber 22 and the 3rd reaction chamber 23 is answered such as to be distributed in isosceles triangle, the biography that transmission chamber 10 is T-shaped, T-shaped
Pass chamber 10 and be positioned at the centre of isosceles triangle, and T-shaped each end one reaction chamber of each connection.
Additionally, the equipment preparing HEMT epitaxial wafer also includes i mechanical arm, wherein i is natural number, at the present embodiment
In, i=n, i.e. in transmission chamber 10, it is provided with a mechanical arm (not shown).Mechanical arm is for being supported the biography of substrate
Passing, transmission chamber 10 (will support substrate for the transition carried out in transmittance process and be transferred to another reaction chamber from a reaction chamber
During room temporarily put support substrate), it is possible to as requested by support in incoming three reaction chambers of substrate any one.?
In other embodiments of this utility model, a transmission intracavity can also arrange multiple mechanical arm, and multiple mechanical arms can be same
Time transmit multiple support substrate, improve work efficiency.
In the present embodiment, the equipment of the described HEMT of preparation epitaxial wafer is MOCVD (Metal-Organic Chemical
Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) equipment.In this utility model other embodiments, also
Thinking of the present utility model application can be prepared to other in equipment of HEMT epitaxial wafer.
The method of work of the equipment of the present embodiment is discussed in detail below in conjunction with Fig. 3 to Fig. 9.
As it is shown on figure 3, first, support substrate 30 is transferred in described first reaction chamber 21, described support substrate 30
For example, silicon substrate.
As shown in Figure 4, then, the first reaction chamber 21 is utilized to support formation nucleating layer 31, described nucleation on substrate 30
The material of layer 31 is at least one in AlN, Al or Al2O3, it is preferred that the material of described nucleating layer 31 is AlN.
As shown in Figure 5 and Figure 6, after formation completes stratum nucleare 31, support substrate 30 is taken by mechanical arm (not shown)
Go out, and in described transmission chamber 10 transmission to described second reaction chamber 22.
Please continue to refer to Fig. 6, the second reaction chamber 22 is utilized to form cushion 32, described cushion 32 on nucleating layer 31
Being formed at the surface of described nucleating layer 31, the material of described cushion 32 includes the element in III A race and V A race, such as, include
One or more in GaN or AlGaN.In the present embodiment, cushion 32 is GaN.In order to improve the insulating properties of cushion 32,
After having formed cushion 32, cushion 32 would generally be doped, such as in doping iron element or carbon at least
A kind of.
As background technology is mentioned, in the prior art, all of silicon chip forms thin film successively in same reaction chamber
Layer, i.e. after first silicon chip forms the thin layer such as nucleating layer and cushion in reaction chamber, has when forming cushion
Ga remains, then under a piece of silicon chip when entering in reaction chamber, in reaction chamber the Ga of residual can under a piece of silicon chip form nucleation
Before Ceng, the surface of Hui Rong to silicon chip also reacts, and causes the HEMT epitaxial wafer quality being subsequently formed the best；Additionally, entering
During row doping, doped chemical generally also can remain in reaction chamber, if directly carrying out follow-up thin in same reaction chamber
The growth of film, such as channel layer and barrier layer, the doped chemical of residual can be polluted channel layer and barrier layer, cause the HEMT of formation
There is the problem such as current collapse effect and leakage current effects in epitaxial wafer.Therefore, the scheme that the utility model proposes is by cushion
32 are fixed in a reaction chamber formation, can be avoided the problems referred to above, improve the quality of HEMT epitaxial wafer.
As shown in Figure 7 to 9, after having formed cushion 32, mechanical arm will support substrate 30 from the second reaction chamber
Take out in 22, and in described transmission chamber 10 transmission to described 3rd reaction chamber 23；And depend in the 3rd reaction chamber 23
The residue thin film of secondary formation HEMT epitaxial wafer, described residue thin film such as includes channel layer 33 and barrier layer 34.Wherein, described ditch
The material of channel layer 33 is GaN, and the material of described barrier layer 34 is AlGaN, thus forms HEMT epitaxial wafer as shown in Figure 10.?
In other embodiments, HEMT epitaxial wafer can also include thin layer known to other, and other thin layers all can be in the 3rd reaction
Chamber 23 is formed.
The present embodiment MOCVD device by three chambers, is fixed on growth in the first reaction chamber 21 by nucleating layer 31,
Cushion 32 is fixed on growth in the second reaction chamber 22, channel layer 33 and barrier layer 34 are fixed on the 3rd reaction chamber 23
Interior growth, such that it is able to compound and the doped chemical such as carbon or ferrum of residue such as Ga or Ga return in being effectively prevented reaction chamber
The molten impact brought, and the reciprocal effect of each chamber, and then improve the crystal mass of GaN base HEMT epitaxial layer, delay further
Solve the current collapse effect existing for GaN base HEMT device and leakage current effects.
Embodiment two
Refer to Figure 11, in the present embodiment, prepare the equipment of HEMT epitaxial wafer and include four reaction chambers, respectively
One reaction chamber the 21, second reaction chamber the 22, the 3rd reaction chamber 23 and the 4th reaction chamber 24, four reaction chambers share one
Individual transmission chamber 10.Concrete, four reaction chambers can be arranged into tetragon, and transmission chamber 10 is positioned at the centre of tetragon.
During preparing described HEMT epitaxial wafer, form nucleating layer 31, cushion 32 all identical with embodiment one, at this
Repeat no more.Except for the difference that, in the present embodiment, after having formed cushion 32, support substrate 30 is taken out by mechanical arm, and
In described transmission chamber 10 transmission to described 3rd reaction chamber 23, the 3rd reaction chamber 23 forms channel layer 33, as
Shown in Figure 12.After having formed channel layer 33, then by mechanical arm, support substrate 30 is taken out, and transmit through described transmission chamber 10
To described 4th reaction chamber 24, formation channel layer 34 in the 4th reaction chamber 24, as shown in FIG. 13 to 15, thus shape
Become HEMT epitaxial wafer as shown in Figure 10.
In the equipment preparing HEMT epitaxial wafer that this utility model embodiment two provides, it is provided that there are four reaction chambers
Equipment, nucleating layer is fixed on a reaction chamber indoor growing, cushion is fixed on another chamber tumor growth, by raceway groove
Layer and barrier layer are individually fixed in the 3rd reaction chamber and the 4th reaction chamber indoor growing, can be effectively prevented in reaction chamber
The residue volatilization melt back impact on other thin layer quality, thus improve the crystal mass of HEMT epitaxial layer, reduce further
Current collapse effect existing for HEMT device and leakage current effects.Additionally it is possible to doped chemical when avoiding undoped buffer layer
Melt back, in channel layer and barrier layer, reduces channel layer and the electric conductivity of barrier layer, improves channel layer and the performance of barrier layer.
Preparation HEMT epitaxial wafer of the present utility model is described the most respectively as a example by there are three and four reaction chambers
Equipment, it should be appreciated that the quantity of described reaction chamber is not limited to three or four, it is also possible to be more than five.Additionally, should
Equipment can also include multiple transmission chamber, is equipped with a mechanical arm in each transmission chamber, each transmission chamber be each responsible for
A few reaction chamber such that it is able to improve utilization rate of equipment and installations, it is also possible to avoid reaction chamber more cause a transmission chamber without
The problem that method reasonable arrangement supports the transmission of substrate.
Above are only preferred embodiment of the present utility model, this utility model is not played any restriction effect.
Any person of ordinary skill in the field, in the range of without departing from the technical solution of the utility model, to this utility model
The technical scheme disclosed and technology contents make the variations such as any type of equivalent or amendment, all belong to without departing from this utility model
The content of technical scheme, within still falling within protection domain of the present utility model.
Claims (5)
1. prepare an equipment for HEMT epitaxial wafer, be used for preparing HEMT epitaxial wafer, it is characterised in that include m reaction chamber,
Wherein m is natural number, and m >=3, wherein, including the first reaction chamber, the second reaction chamber and the 3rd reaction chamber, and described
One reaction chamber is used for being formed nucleating layer, and described second reaction chamber is used for being formed cushion, and described 3rd reaction chamber is used for
Form residue thin layer.
2. prepare the equipment of HEMT epitaxial wafer as claimed in claim 1, it is characterised in that also include n transmission chamber, be connected to
Between m reaction chamber, being used for transmitting support substrate, wherein n is natural number, and n < m.
3. prepare the equipment of HEMT epitaxial wafer as claimed in claim 2, it is characterised in that also include i mechanical arm, each
Individual described transmission intracavity is at least provided with a mechanical arm, and wherein i is natural number.
4. prepare the equipment of HEMT epitaxial wafer as claimed in claim 1, it is characterised in that setting of the described HEMT of preparation epitaxial wafer
Standby for MOCVD.
5. prepare the equipment of HEMT epitaxial wafer as claimed in claim 1, it is characterised in that include 4 reaction chambers, be respectively
First reaction chamber, the second reaction chamber, the 3rd reaction chamber and the 4th reaction chamber, described first reaction chamber is used for being formed
Nucleating layer, described second reaction chamber is used for being formed cushion, and described 3rd reaction chamber is used for being formed channel layer, and the described 4th
Reaction chamber is used for forming barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620301984.1U CN205680660U (en) | 2016-04-11 | 2016-04-11 | Prepare the equipment of HEMT epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620301984.1U CN205680660U (en) | 2016-04-11 | 2016-04-11 | Prepare the equipment of HEMT epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205680660U true CN205680660U (en) | 2016-11-09 |
Family
ID=57439020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620301984.1U Active CN205680660U (en) | 2016-04-11 | 2016-04-11 | Prepare the equipment of HEMT epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205680660U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655396A (en) * | 2016-04-11 | 2016-06-08 | 杭州士兰微电子股份有限公司 | Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer |
-
2016
- 2016-04-11 CN CN201620301984.1U patent/CN205680660U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655396A (en) * | 2016-04-11 | 2016-06-08 | 杭州士兰微电子股份有限公司 | Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102390236B1 (en) | Methods of forming films including germanium tin and structures and devices including the films | |
| KR102544300B1 (en) | Methods of forming silicon germanium tin films and structures and devices including the films | |
| CN103066103A (en) | Substrate breakdown voltage improvement method for group III-nitride on silicon substrate | |
| CN101150054A (en) | A method for obtaining low bit discrepancy density extension thin film via using neck down extension | |
| CN102851733B (en) | Gallium nitride-based material and the preparation system of device and preparation method | |
| CN104067374A (en) | Multiple complementary gas distribution assemblies | |
| JP2018064103A (en) | Group xiii nitride composite substrate, semiconductor device, and method for manufacturing group xiii nitride composite substrate | |
| CN205680660U (en) | Prepare the equipment of HEMT epitaxial wafer | |
| CN107316805A (en) | The manufacture device of the manufacture method of silicon carbide epitaxy chip, the manufacture method of manufacturing silicon carbide semiconductor device and silicon carbide epitaxy chip | |
| CN104250725B (en) | Pre-deposition technique, diffusion technique and diffusion facilities | |
| CN104659109A (en) | Thin film transistor and manufacturing method thereof as well as array substrate | |
| JPWO2005088688A1 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
| CN202076271U (en) | Epitaxial layer structure of back sealing monocrystalline silicon | |
| CN103866277A (en) | Method for preparing double-acceptor co-doped zinc oxide film by atomic layer deposition | |
| CN205752103U (en) | The equipment of preparation GaN epitaxy sheet | |
| TW202340551A (en) | Nitride semiconductor substrate and method for manufacturing the same | |
| CN202332817U (en) | Epitaxial wafer substrate capable of reducing self-doping in epitaxy process, epitaxial wafer and semiconductor device | |
| CN103972382A (en) | Method for manufacturing semiconductor material | |
| CN103343329A (en) | Equipment and method for growing silicon carbide film | |
| CN105655396A (en) | Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer | |
| CN107611014A (en) | A kind of preparation method of GaN thermoelectric film materials | |
| JP2015002329A (en) | Epitaxial wafer, method for manufacturing the same, and nitride semiconductor device | |
| CN102800572A (en) | Method for preparing magnesium-doped semiconductor film and semiconductor film thereof | |
| CN105742160A (en) | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer | |
| CN106601880B (en) | Epitaxial wafer of gallium nitride-based light-emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |