CN220443794U - Mixing device for silicon carbide epitaxial reaction gas - Google Patents
Mixing device for silicon carbide epitaxial reaction gas Download PDFInfo
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- CN220443794U CN220443794U CN202321743241.6U CN202321743241U CN220443794U CN 220443794 U CN220443794 U CN 220443794U CN 202321743241 U CN202321743241 U CN 202321743241U CN 220443794 U CN220443794 U CN 220443794U
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- silicon carbide
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- 239000012495 reaction gas Substances 0.000 title claims abstract description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 12
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical group Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a mixing device of silicon carbide epitaxial reaction gas, which comprises a full premixing pipeline arranged corresponding to a main carrier gas pipeline module with carrier gas being hydrogen; the full premixing pipeline comprises a plurality of buffer tubes which are correspondingly arranged, the plurality of buffer tubes at least comprise a full premixing executing tube with the pipe diameter of 1-3 inches and the length of 10-15cm, and the rest buffer pipelines are corresponding flow pipes with the pipe diameter of 1/8-3/4 inches; the reaction gas flows into the reaction cavity through the full premixing pipeline, and after entering the full premixing pipeline, the reaction gas enters a full premixing execution pipe with the pipe diameter of 1-3 inches from a corresponding flow pipe with the pipe diameter of 1/8-3/4 inches, and the full premixing execution pipe is used as a full mixing area for reducing the flow rate, increasing the residence time and fully mixing the C source and the Si source which participate in the reaction.
Description
Technical Field
The utility model relates to a silicon carbide epitaxial molding preparation technology and a silicon carbide epitaxial molding preparation device, in particular to a mixing device for silicon carbide epitaxial reaction gas.
Background
Silicon carbide (SiC) is a compound semiconductor material, referred to as a third generation semiconductor material. Because the SiC has a wide forbidden bandwidth, the SiC has high breakdown electric field strength and low intrinsic carrier concentration, so that the SiC power device has the advantages of high voltage resistance, small volume, low power consumption, high temperature resistance and the like; in order to realize the characteristics of high breakdown voltage and small series resistance of the collector region, the material for manufacturing the silicon carbide electronic power device is generally a silicon carbide epitaxial layer with high resistivity grown on a silicon carbide substrate with extremely low resistance. In the currently commercialized silicon carbide epitaxy apparatus, the design and fabrication of the reactor within the reaction chamber is critical to the distribution of the temperature and flow fields during epitaxial growth.
The main reaction principle of silicon carbide is SiHCl 3+acetylene- & gtSiC, and currently, the main process gases are TCS and acetylene. As the most central reactant gas, the process requires a strict control of the ratio of C source to Si source, and the C/Si ratio is generally controlled to a stable value between 1 and 1.5 depending on the needs of the various processes.
Effect of C/Si on epitaxial layer:
1. background doping concentration of epitaxial layer: n is the most dominant source of unintended doping impurities, increasing the C/Si ratio can reduce the background doping concentration
2. Epitaxial layer conductivity: n (N-type doping source) mainly occupies C position, al (p-type doping source) mainly occupies Si position, so that higher C/Si ratio can inhibit N-type doping efficiency and improve p-type doping efficiency (competition theory)
3. Epitaxial growth rate, defect density, surface roughness: the ratio of C/Si is too low to form silicon drops, the ratio of C/Si is too large, 3C hetero-crystals are easy to form under a positive axis, and step bunching is easy to occur under an off axis.
Therefore, the complete process setting proportion of the C/Si proportion in the cavity reaction is ensured, and the preparation of the high-quality silicon carbide epitaxial film is particularly necessary.
Therefore, it is necessary to provide a mixing device for silicon carbide epitaxial reaction gases to solve the above-mentioned problems.
Disclosure of Invention
The utility model aims to provide a mixing device for silicon carbide epitaxial reaction gas.
The technical proposal is as follows:
the mixing device for the silicon carbide epitaxial reaction gas comprises a full premixing pipeline which is arranged corresponding to a main carrier gas pipeline module with carrier gas being hydrogen;
the full premixing pipeline comprises a plurality of buffer pipes which are correspondingly arranged, the plurality of buffer pipes at least comprise a full premixing executing pipe with the pipe diameter of 1-3 inches, and the rest buffer pipelines are corresponding flow pipes with the pipe diameter of 1/8-3/4 inches;
after the reaction gas enters the full premixing pipeline, the reaction gas enters a full premixing execution pipe with the pipe diameter of 1-3 inches from a corresponding flow pipe with the pipe diameter of 1/8-3/4 inches, and the full premixing execution pipe is used as a full mixing area for fully mixing a C source and a Si source which are used for reducing the flow rate, increasing the residence time and participating in the reaction.
Further, the length of the fully premixed executive tube is 10-15cm.
Further, the full premixing pipeline is used as a full mixing module, and the full mixing module is correspondingly provided with a reaction gas source module.
Further, the reactive gas source module comprises a TCS vapor module, a C source pipeline module, an N-type doping module and a P-type doping module.
Further, the TCS vapor module provides a Si source for a hydrogen bubbled TCS liquid source.
Further, the C source pipeline module is used for providing a C source by using acetylene as gas.
Further, an N-type doping module provides N2 doping.
Further, the P-type doping module provides Al element doping.
Further, the reaction gas source module is communicated with the full mixing module through the premixing module.
Compared with the prior art, the utility model ensures that the C/Si ratio is completely set in the process during the cavity reaction through the full premixing structure, thereby growing the high-quality silicon carbide epitaxial film.
Drawings
Fig. 1 is a schematic structural view of the present utility model.
Detailed Description
Examples:
referring to fig. 1, the present embodiment shows a mixing method for silicon carbide epitaxial reaction gas, which comprises the following steps:
1) A full premixing pipeline 3 is arranged corresponding to the main carrier gas pipeline module 1 with carrier gas of hydrogen;
the full premixing pipeline 3 comprises a plurality of buffer tubes which are correspondingly arranged, the plurality of buffer tubes at least comprise a full premixing executing tube with the pipe diameter of 1-3 inches and the length of 10-15cm, and the rest buffer pipelines are corresponding flow pipes with the pipe diameter of 1/8-3/4 inches;
the reaction gas flows into the reaction cavity through the full premixing pipeline, and after entering the full premixing pipeline, the reaction gas enters a full premixing executing pipe from a corresponding flow pipe, and the full premixing executing pipe is used as a full mixing area for fully mixing a C source and a Si source which are used for reducing the flow rate, increasing the residence time and participating in the reaction;
2) The reaction gas enters the full premixing execution pipe 100 with the pipe diameter of 1/8-3/4 inch from the corresponding premixing execution pipe 200 with the pipe diameter of 1-3 inch and the length of 10-15cm, the flow rate of the reaction gas is reduced due to the increase of the pipe diameter, the residence time of the reaction gas is increased, the reaction gas can be more fully mixed to form the reaction gas with fully mixed reaction source, and the reaction gas with fully mixed reaction source enters the corresponding premixing execution pipe 200 with the pipe diameter of 1/8-3/4 inch again after being fully mixed from the full premixing execution pipe 100 with the pipe diameter of 1-3 inch and the length of 10-15 cm;
3) The reaction gas with fully mixed reaction source enters the reaction cavity 8 through the corresponding flow pipe 200 of 3/8 inch, so that the flow rate of the gas entering the reaction cavity 8 is ensured, and the high-quality silicon carbide epitaxial film preparation method is formed.
Wherein:
the full premixing pipeline 3 is used as a full mixing module, and the full mixing module is correspondingly provided with a reaction gas source module.
The reactant gas source module comprises a TCS vapor module 4, a C source pipeline module 5, an N-type doping module 6 and a P-type doping module 7.
The TCS vapor module 4 provides a Si source for a hydrogen bubbled TCS liquid source.
And a C source pipeline module 5, wherein the gas is acetylene and provides a C source.
An N-type doping module 6 provides N2 doping.
The P-type doping module 7 provides Al element doping.
The reaction gas source module is connected with the full mixing module through the premixing module 2.
Compared with the prior art, the utility model ensures that the C/Si ratio is completely set in the process of cavity reaction by a full premixing process, thereby growing the high-quality silicon carbide epitaxial film.
What has been described above is merely some embodiments of the present utility model. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit of the utility model.
Claims (9)
1. The utility model provides a mixing arrangement of carborundum epitaxy reaction gas which characterized in that: the device comprises a full premixing pipeline which is arranged corresponding to a main carrier gas pipeline module with carrier gas being hydrogen;
the full premixing pipeline comprises a plurality of buffer pipes which are correspondingly arranged, the plurality of buffer pipes at least comprise a full premixing executing pipe with the pipe diameter of 1-3 inches, and the rest buffer pipelines are corresponding flow pipes with the pipe diameter of 1/8-3/4 inches;
the reaction gas flows into the reaction cavity through the full premixing pipeline, and after entering the full premixing pipeline, the reaction gas enters a full premixing execution pipe with the pipe diameter of 1-3 inches from a corresponding flow pipe with the pipe diameter of 1/8-3/4 inches, and the full premixing execution pipe is used as a full mixing area for reducing the flow rate, increasing the residence time and fully mixing the C source and the Si source which participate in the reaction.
2. A silicon carbide epitaxial reaction gas mixing device according to claim 1, wherein: the length of the pre-mixing executive tube is 10 cm to 15cm.
3. A silicon carbide epitaxial reaction gas mixing device according to claim 1, wherein: the full premixing pipeline is used as a full mixing module, and the full mixing module is correspondingly provided with a reaction gas source module.
4. A silicon carbide epitaxial reaction gas mixing device according to claim 3, wherein: the reaction gas source module comprises a TCS vapor module, a C source pipeline module, an N-type doping module and a P-type doping module.
5. The mixing device for silicon carbide epitaxial reaction gases according to claim 4, wherein: the TCS vapor module provides a Si source for the hydrogen bubbled TCS liquid source.
6. The mixing device for silicon carbide epitaxial reaction gases according to claim 4, wherein: and the C source pipeline module is used for providing a C source for acetylene.
7. The mixing device for silicon carbide epitaxial reaction gases according to claim 4, wherein: and the N-type doping module is used for providing N2 doping.
8. The mixing device for silicon carbide epitaxial reaction gases according to claim 4, wherein: and the P-type doping module is used for providing Al element doping.
9. A silicon carbide epitaxial reaction gas mixing device according to claim 3, wherein: the reaction gas source module is communicated with the full mixing module through the premixing module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321743241.6U CN220443794U (en) | 2023-07-04 | 2023-07-04 | Mixing device for silicon carbide epitaxial reaction gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321743241.6U CN220443794U (en) | 2023-07-04 | 2023-07-04 | Mixing device for silicon carbide epitaxial reaction gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220443794U true CN220443794U (en) | 2024-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321743241.6U Active CN220443794U (en) | 2023-07-04 | 2023-07-04 | Mixing device for silicon carbide epitaxial reaction gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220443794U (en) |
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2023
- 2023-07-04 CN CN202321743241.6U patent/CN220443794U/en active Active
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Address after: 214200 Dongshen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Address before: 214200 Dongshen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China |
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