CN102304763B - Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device - Google Patents
Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device Download PDFInfo
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Abstract
The invention relates to a continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device. The device comprises a main chamber, a moveable tray, a fixed tray, a first auxiliary chamber and a second auxiliary chamber, wherein the main chamber is a hollow cylinder and used for providing a vacuum environment for crystal growth; a tail gas pipeline radially passes through the main chamber; a source gas pipeline is communicated with the lower part of the tail pipeline; the moveable tray is positioned in the main chamber and above the source gas pipeline; the fixed tray is positioned in the main chamber and above the moveable tray; the first auxiliary chamber is used for providing a vacuum buffer environment and provides a sample to the main chamber under the environment; the first auxiliary chamber is positioned on one side of the main chamber and is communicated with the main chamber; a first gate is arranged between the main chamber and the first auxiliary chamber; a second auxiliary chamber is used for providing a vacuum buffer environment and taking out the sample from the main chamber under the environment; the second auxiliary chamber is arranged on the other side of the main chamber and is communicated with the main chamber; a second gate is arranged between the main chamber and the second auxiliary chamber; and the first auxiliary chamber and the second auxiliary chamber are isolated from the main chamber respectively through the first gate and the second gate.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of successive type high temperature chemical vapor deposition method (High Temperature Chemical Vapor Deposition, HTCVD) silicon carbide crystal growing device or halogenide chemical Vapor deposition process (Halogen Chemical Vapor Deposition, HCVD) silicon carbide crystal growing device.
Background technology
Silicon carbide (SiC) is the third generation semiconductor material that grows up behind first-generation Semiconducting Silicon Materials (Si), germanium (Ge) and s-generation semiconductor material gallium arsenide (GaAs).Because SiC has broad-band gap, the high critical breakdown electric field that decuples Si, the high heat conductance that is three times in Si that is three times in Si, the characteristics such as high carrier saturation concentration that double Si, it has superior using value aspect the high temperature of military and space industry, high frequency, high-power electric and electronic, the photoelectric device, and progressively replace existing silicon and GaAs based power electronic devices, become semiconductor foundation material of future generation.
In the application facet of semiconductor lighting substrate material, the thermal conductivity of silicon carbide is sapphire ten times, can solve better the technical barrier of illumination of high-power semiconductor device heat radiation; In addition, carbofrax material can be made the vertical structure light-emitting body as substrate, the same material luminous efficiency that can double is close to and has saved the cost of half in theory, and silicon carbide replaces sapphire becomes trend of the times as the substrate material of photodiode (LED).Therefore, silicon carbide wafer has important application and wide prospect in fields such as microelectronics, power electronics and semiconductor lighting devices.
At present, the method that the SiC wafer generally adopts physical vapor to transport (PVT) is prepared, the current consumption of PVT method own is large, production capacity is little, therefore, the method has that cost is high, output is little etc. and is unfavorable for the shortcoming of scale operation, the price of current silicon carbide wafer on market is high and supply is little thereby also caused, and then has seriously restricted the development of downstream related industries.
High temperature chemical vapor deposition method (HTCVD) also is used to prepare the SiC wafer, and Fig. 1 illustrates the crystal growing apparatus that the standby SiC wafer of HTCVD legal system uses in the prior art.As shown in Figure 1, this crystal growing apparatus uses siliceous semi-conductor gas (such as SiCl
4) and the semi-conductor gas (C of carbon containing
3H
8), and the synthetic SiC of at high temperature reaction, thereby form the SiC crystal ingot at seed crystal 102, form the SiC substrate through wafer process again; Wherein, 101 is the temperature sensing window, and 102 is seed crystal, and 103 is furnace chamber, and 104 is the thermal insulation layer of this crystal growing apparatus, and 105 is the internal layer gas inlet, and 106 is outer gas inlet, and 107 are the tail gas outlet.Lower in view of raw materials cost, energy consumption is moderate, output is larger, therefore, the HTCVD method can satisfy the needs of current LED device industry development, also is fit to growing P-type and high-purity semi-insulating type silicon carbide wafer, is used for the high-power electric and electronic industry.
But, along with develop rapidly and the great demand of LED device of new generation industrialization, and the skyrocketing and the significantly increase of energy consumption, environmental protection cost of resources costs, undoubtedly the preparation of SiC wafer is had higher requirement.The every stove of the traditional silicon carbide crystal growing device crystal ingot (crystal bar) of generally only growing, and general growing apparatus all is discontinuous, i.e. the growth that heats up after the raw material shove charge, cooling after growth is finished is until could blow-on take out crystal ingot after the room temperature; Growth efficiency is low comparatively speaking, does not satisfy the great demand of industrial scale development.
Along with increasing to the demand of LED device of new generation both at home and abroad, the industrialized development of LED device of new generation requires also urgent all the more; In the urgent need to a kind of novel silicon carbide crystal growing device is provided, so that can be in the situation that crystal ingot is produced in the blowing out of not lowering the temperature continuously, raise the efficiency and reduce cost with this, satisfy the demand of SiC substrate large-scale production.
Summary of the invention
In order to address the above problem, the invention provides a kind of CVD method SiC crystal growing apparatus, can under the operating mode of the blowing out of not lowering the temperature, continue the production of next crystal ingot, raise the efficiency and reduce cost with this.
The invention provides a kind of successive type HTCVD method silicon carbide crystal growing device, comprising:
One main chamber is a columniform ducted body, is used for providing the vacuum environment of crystal growth, and a tail gas pipeline radially passes in this main chamber, passes into a source gas piping below the tail gas pipeline;
One movable pallet is positioned at main chamber, above the gas piping of source;
One fixed tray is positioned at main chamber, above movable pallet;
One first auxiliary chamber is used for providing the vacuum buffer environment, and under this environment to the sampling of described main chamber, this first auxiliary chamber is positioned at a side of main chamber, is communicated with main chamber, and one first gate is arranged between main chamber and the first auxiliary chamber;
One second auxiliary chamber is used for providing the vacuum buffer environment, and takes out sample to described main chamber under this environment, and this second auxiliary chamber is positioned at the opposite side of main chamber, is communicated with main chamber, and one second gate is arranged between main chamber and the second auxiliary chamber;
Wherein said the first and second auxiliary chamber isolate with described main chamber respectively by first, second gate.
Successive type crystal growing apparatus provided by the invention, the insulated wall that is connected with compensated cavity in its main growth chamber is movable, the growth crystal ingot forms inwall with fixing insulated wall when (rod) to be played insulation and safeguards airflow field, growth is finished or when interrupting, movable insulated wall sedimentation certain altitude, make the magnetic rod in the compensated cavity can send the movable pallet of fetch bit in main growth chamber, finish continuous production under the blowing out operating mode of not lowering the temperature with this.
Description of drawings
Below in conjunction with the drawings and specific embodiments technical scheme of the present invention is described in further detail, wherein:
Fig. 1 shows the crystal growing apparatus that the standby SiC wafer of HTCVD legal system uses in the prior art;
Fig. 2 shows the side-view of an embodiment of successive type crystal growing apparatus provided by the invention;
Fig. 3 shows the vertical view of an embodiment of successive type crystal growing apparatus provided by the invention;
Fig. 4 shows successive type crystal growing apparatus shown in Figure 3 along the cross section view of AA ';
Fig. 5 shows successive type crystal growing apparatus shown in Figure 3 along the cross section view of BB '.
Embodiment
Below in conjunction with accompanying drawing exemplary embodiments of the present invention are described.For clear and concise and to the point for the purpose of, actual embodiment is not limited to these technical characterictics described in the specification sheets.It should be understood, however, that in the process of improving any one described practical embodiments, the decision of a plurality of specific embodiments must be the specific objective that can realize the personnel of improving, for example, defer to the relevant and commercial relevant restriction of industry, described restriction changes along with the difference of embodiment.And even it should be understood that the effect of aforementioned improved is very complicated and consuming time, but this remains the routine techniques means for the those skilled in the art that know benefit of the present invention.
See also Fig. 2 to shown in Figure 5, such as Fig. 2, the successive type crystal growing apparatus comprises: main chamber 1, it is a columniform ducted body, be used for providing the vacuum environment of crystal growth, a tail gas pipeline 3 radially passes in this main chamber 1, passes into a source gas piping 11 below tail gas pipeline 3; And in this chamber growing crystal; Movable pallet 4 (Fig. 3) is positioned at main chamber 1, above source gas piping 11; Fixed tray 5 is positioned at main chamber 1, above movable pallet 4; The first auxiliary chamber 7 is used for providing the vacuum buffer environment, and under this environment to 1 sampling of described main chamber, this first auxiliary chamber 7 is positioned at a side of main chamber 1, is communicated with main chamber 1, between main chamber 1 and the first auxiliary chamber 7 one first gate 6 is arranged; The second auxiliary chamber 7 ', be used for providing vacuum protection or atmosphere buffer environment, and under this environment, from described main chamber 1, take out crystal, this the second auxiliary chamber 7 ' is positioned at the opposite side of main chamber 1, be communicated with main chamber 1, one second gate 6 ' is arranged between main chamber 1 and the second auxiliary chamber 7 '; And described the first and second auxiliary chamber 7 isolate (Fig. 3) with described main chamber 1 respectively by first, second gate 6,6 '.
Described main chamber 1 also comprises appliance stand 0 (Fig. 3), be used for supporting aforementioned mentioned device feature, other subsidiary functions of described crystal growing apparatus perhaps can also be provided, such as the carrier gas (such as hydrogen) of adopting in the crystal growing process, reaction source gas (as siliceous, the gas of carbon containing), P type and N-type doping agent, vacuum pump system, power-supply system etc.This arranges the function that stand has and includes but not limited to aforementioned mentioned content, and the modules unit also can be according to concrete needs and rational deployment and configuration.
According to another embodiment of crystal growing apparatus provided by the invention, described the first and second auxiliary chamber 7,7 ' comprise the guide rail that carries specimen holder and along the rod-like members 9 of described guide rail dress or sample thief.Described rod-like members 9 is selected from magnetic bar or colludes the type bar, is used for colluding the mode of getting by magnetic attraction or hook and loads, picks and places specimen holder.
As shown in Figure 3, described the first auxiliary chamber 7 and described the second auxiliary chamber 7 ' lay respectively at the relative both sides of described main chamber 1.Those skilled in the art can clearly know according to instruction of the present invention, described the first auxiliary chamber 7 and described the second auxiliary chamber 7 ' can with arbitrarily angled be positioned at described main chamber 1 around, those skilled in the art can and arrange arbitrarily according to the design needs such as place, streamline.
The crystal growing apparatus that provides according to one embodiment of present invention, its main chamber 1 also comprises: fixed tray 5 and movable pallet 4 (shown in the dotted line frame); Movable insulated wall 10 is for the inwall of the main chamber 1 that is looped around described crystal growth, at the intermediate formation sample grown chamber of movable insulated wall 10.The inwall of main chamber 1 both can be an insulated wall that integral body is movable all by movable in this embodiment, also can be the independent movable insulated walls (Fig. 3) of many fans.
The crystal growing apparatus that provides according to one embodiment of present invention, its main chamber 1 also comprises: fixedly insulated wall 2 and movably insulated wall 10, movable insulated wall 10 is positioned on the path of sample transmission, those fixedly insulated wall 2 and movable insulated wall 10 be looped around the inwall of the described main chamber 1 of crystal growth, at fixedly insulated wall 2 and movably the intermediate formation sample grown chamber of insulated wall 10.Specifically, the quantity of described movable insulated wall is 2, comprises the first movable insulated wall and the second movable insulated wall, lays respectively at described the first auxiliary chamber 7 and described main chamber 1, the junction of described main chamber 1 and described the second auxiliary chamber 7 '; When the crystal growth is finished, by reducing the described first movable insulated wall and/or the second movable insulated wall 2, so that movable pallet 4 (Fig. 3) can be carried and/or take out to the rod-like members 9 in described the first auxiliary chamber 7 and/or the second auxiliary chamber 7 ' from described main chamber 1.
Shown in Fig. 4 or 5, in the crystal growing apparatus provided by the invention, described main chamber 1 also comprises: fixed tray 5 and movable pallet 4, lay respectively in the crystal growth chamber of described main chamber 1 inside, and described fixed tray 5 is arranged on the described movable pallet 4, and described movable pallet 4 can rotate and move up and down.
According to another embodiment of crystal growing apparatus provided by the invention, described main chamber also comprises: be positioned at the induction heating bucket 12 of crystal growth chamber and be positioned at the outer load coil 13 of described crystal growth chamber.This crystal growth chamber also comprises thermal insulating cover 20, be arranged on induction heating bucket 12 around, needed reliable and stable temperature when guaranteeing the crystal growth, thus obtain the higher carborundum crystals of quality.
Another embodiment according to crystal growing apparatus provided by the invention, the pipeline of described delivery source gas is to be made of bilayer or multilayer sleeve, and wherein the gas carried of the passage between outer sleeve and the inner sleeve is used for limiting the gas flow of described inner sleeve.Wherein the gas carried of the passage between outer sleeve and the inner sleeve is used for limiting the gas flow of described inner sleeve, thereby is conducive to guarantee the stability of air-flow air pressure in the crystal growing process, and the homogeneity of the SiC crystal of growth etc.Those skilled in the art can clearly know according to instruction of the present invention, and according to the actual crystal growth technique, the inner layer sleeve quantity in the multilayer sleeve depends on kind and the various shielding gas that may need or the rare gas element etc. of the gas of required input.
Pneumatic sample carrier passage 17 and 18, the described movable pallet 4 of gas-powered that is used for carrying by this passage rotates and moves up and down.Wherein said pneumatic sample carrier passage 17 is induction trunk, and 18 is outlet passageway, and this induction trunk 17 is set to respect to outlet passageway 18 from the center of circle of sample carrier more recently.
With reference to the exemplary description of aforementioned the present invention, those skilled in the art can clearly know the present invention and have the following advantages:
1, CVD method silicon carbide crystal growing device provided by the invention, by outside main chamber, being provided with at least two auxiliary chamber (unit), can under the operating mode of the blowing out of not lowering the temperature, continue the production of next crystal ingot, crystal growing apparatus one stove can only grow one piece of crystal ingot, the continuously limitation of growing crystal have been overcome in the prior art; Improve the efficient of crystal growth, can satisfy the needs of the extensive development of SiC industry.
2, CVD method silicon carbide crystal growing device provided by the invention, the insulated wall that is connected with compensated cavity in the main growth chamber is movable, growth forms inwall with fixing insulated wall during crystal ingot and plays insulation and safeguard airflow field, has guaranteed the reliability of environment of crystal growth and the stability of quality.
In addition, crystal growth is finished or when interrupting, movable insulated wall sedimentation certain altitude makes the magnetic rod in the compensated cavity can send the movable pallet of fetch bit in main growth chamber, finishes continuous production under the blowing out operating mode of not lowering the temperature with this.
In addition, need to prove, relational language among the present invention, such as " first ", " second ", " side " and " opposite side " and similarly term an entity or action are distinguished with another entity or action, be not to necessarily require or hint that aforementioned entity or behavior have any described relation or sequentially.At last, need to prove, cause the present invention hard to understand for fear of disclosing unnecessary details, accompanying drawing of the present invention only shows and the closely-related structure of this technical scheme and/or process step, and other and the not closely-related details of keynote idea of the present invention have been omitted.
Although invention has been described based on some preferred embodiments, those skilled in the art should know, and scope of the present invention is not limited to those embodiment.Without departing from the spirit and substance in the present invention, those of ordinary skill in the art is understanding on the basis of the present invention and can carry out variations and modifications to embodiment, and therefore falls into the protection domain that claims of the present invention limit.
Claims (9)
1. successive type HTCVD method silicon carbide crystal growing device comprises:
One main chamber is a columniform ducted body, is used for providing the vacuum environment of crystal growth, and a tail gas pipeline radially passes in this main chamber, passes into a source gas piping below the tail gas pipeline;
One movable pallet is positioned at main chamber, and above the gas piping of source, described movable pallet can be rotated by gas-powered and move up and down;
One fixed tray is positioned at main chamber, above movable pallet;
One first auxiliary chamber is used for providing the vacuum buffer environment, and under this environment to the sampling of described main chamber, this first auxiliary chamber is positioned at a side of main chamber, is communicated with main chamber, and one first gate is arranged between main chamber and the first auxiliary chamber;
One second auxiliary chamber is used for providing the vacuum buffer environment, and takes out sample to described main chamber under this environment, and this second auxiliary chamber is positioned at the opposite side of main chamber, is communicated with main chamber, and one second gate is arranged between main chamber and the second auxiliary chamber;
Wherein said the first and second auxiliary chamber isolate with described main chamber respectively by first, second gate.
2. successive type HTCVD method silicon carbide crystal growing device according to claim 1, wherein said the first and second auxiliary chamber comprise the guide rail that carries specimen holder and the rod-like members of loading or taking out sample along guide rail.
3. successive type HTCVD method silicon carbide crystal growing device according to claim 2, wherein said rod-like members is selected from magnetic bar or colludes the type bar.
4. successive type HTCVD method silicon carbide crystal growing device according to claim 1, wherein said the first auxiliary chamber lays respectively at the relative both sides of described main chamber with described the second auxiliary chamber.
5. successive type HTCVD method silicon carbide crystal growing device according to claim 1, wherein said main chamber also comprises: movable insulated wall is used for being looped around the inwall of the main chamber of described crystal growth, at the intermediate formation sample grown chamber of movable insulated wall.
6. successive type HTCVD method silicon carbide crystal growing device according to claim 1, wherein said main chamber also comprises: fixedly insulated wall and movably insulated wall, movable insulated wall is positioned on the path of sample transmission, should be fixedly insulated wall and movable insulated wall be looped around the inwall of the main chamber of crystal growth, at fixing insulated wall and the movable intermediate formation sample grown chamber of insulated wall.
7. successive type HTCVD method silicon carbide crystal growing device according to claim 6, the quantity of wherein said movable insulated wall is 2, lays respectively at described the first auxiliary chamber and described main chamber, the junction of described main chamber and described the second auxiliary chamber; When the crystal growth is finished, by reducing described movable insulated wall, so that movable pallet can be carried and/or take out to the rod-like members in described the first auxiliary chamber and/or the second auxiliary chamber from described main chamber.
8. successive type HTCVD method silicon carbide crystal growing device according to claim 1, sample grown in the wherein said main chamber is indoor also to be comprised an induction heating bucket and is positioned at the outer load coil of induction heating bucket, one thermal insulating cover, this thermal insulating cover be positioned at the induction heating bucket around.
9. successive type HTCVD method silicon carbide crystal growing device according to claim 1, the pipeline of wherein said delivery source gas is to be made of bilayer or multilayer sleeve, and wherein the gas carried of the passage between outer sleeve and the inner sleeve is used for limiting the gas flow of described inner sleeve.
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| CN104538289A (en) * | 2014-12-17 | 2015-04-22 | 中国科学院半导体研究所 | Multi-chip silicon carbide semiconductor material manufacturing device |
| CN104514034B (en) * | 2015-01-08 | 2017-10-27 | 中国科学院半导体研究所 | High temperature service and method for growth of silicon carbide |
| CN110408998B (en) * | 2019-07-29 | 2020-12-22 | 江苏星特亮科技有限公司 | Silicon carbide single crystal continuous growth device and growth method thereof |
| CN111636098A (en) * | 2020-07-07 | 2020-09-08 | 深圳市纳设智能装备有限公司 | CVD reaction module of silicon carbide epitaxial equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1327092A (en) * | 2000-06-07 | 2001-12-19 | 中国科学院半导体研究所 | Device for producing high temperature silicon carbide semiconductor material |
| CN1570225A (en) * | 2003-04-24 | 2005-01-26 | 奥克麦蒂克有限公司 | Device and method for producing single crystals by vapor deposition |
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| US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| JP4591523B2 (en) * | 2008-03-05 | 2010-12-01 | 株式会社デンソー | Silicon carbide single crystal manufacturing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1327092A (en) * | 2000-06-07 | 2001-12-19 | 中国科学院半导体研究所 | Device for producing high temperature silicon carbide semiconductor material |
| CN1570225A (en) * | 2003-04-24 | 2005-01-26 | 奥克麦蒂克有限公司 | Device and method for producing single crystals by vapor deposition |
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