CN105200515A - Induction coil for SiC single-crystal growth furnace and application thereof - Google Patents
Induction coil for SiC single-crystal growth furnace and application thereof Download PDFInfo
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- CN105200515A CN105200515A CN201510617095.6A CN201510617095A CN105200515A CN 105200515 A CN105200515 A CN 105200515A CN 201510617095 A CN201510617095 A CN 201510617095A CN 105200515 A CN105200515 A CN 105200515A
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Abstract
The invention discloses an induction coil for a SiC single-crystal growth furnace. The induction coil comprises a spirally-wound hollow coil body, and a cooling water inlet and a cooling water outlet are formed in the two ends of the hollow coil body respectively. The induction coil for the SiC single-crystal growth furnace is characterized in that the spaces of turns of the hollow coil body are sequentially decreased from top to bottom. According to the induction coil for the SiC single-crystal growth furnace, the spaces of the turns of the induction coil are designed, namely the spaces of the turns are decreased gradually, the densities are not consistent any more, it is guaranteed that the temperature of the seed crystal position is low and the temperature of a SiC powder source is high accordingly, the axial temperature difference needed for single-crystal growth is formed ultimately, hence, the single-crystal growth speed is increased, and at last, high-quality SiC single crystals are grown out. The induction coil body, the cooling water outlet and the cooling water inlet are made of the same material, and therefore deformation can be prevented in the cooling process.
Description
Technical field
The present invention relates to a kind of ruhmkorff coil for SiC single crystal growth furnace and application thereof, belong to the technical field of high temperature cabonization silicon single crystal growing furnace.
Background technology
Compare with s-generation semiconductor material GaAs with first-generation semiconductor material Si, third generation semiconductor material SiC has the characteristics such as high electric current breakdown electric field, high saturated electrons drift speed and high heat conductance, causes the extensive concern of people.The physics of these excellences and electrology characteristic make them in development high temperature, high frequency, high-power, radioprotective device and short-wave LED etc., have extraordinary application prospect.
At present, general in the world SiC single crystal growth method is physical vapor transport (PhysicalVaporTransport, PVT) technology.PVT technology is when being heated to more than 2000 DEG C by SiC source powder in airtight crucible, the gas molecule that SiC source powder will resolve into containing SiC, these gas molecules re-unite colder seed crystal face by thermograde between source powder and SiC seed crystal, grow SiC single crystal.By PVT method can growing high-quality, large-size SiC single crystal, and effectively can reduce the various defects in SiC crystal.
The parameter affecting SiC crystal growth has: growth temperature, thermograde, the distance of source and seed crystal, nebulizer gas pressure etc.But the ruhmkorff coil design used due to current SiC single crystal growth furnace is unreasonable, make crucible interior temperature distribution unreasonable, crystal axis is caused to be that centre is the highest, two ends are minimum to the temperature in the direction of growth, effectively can not form the thermograde of crystal growth direction, thus cause the crystal produced to there is the defect such as microtubule and dislocation, have impact on the quality of crystal.
Summary of the invention
For the deficiencies in the prior art, the invention provides that a kind of structure is simple, heating efficiency is high, be conducive to the ruhmkorff coil for SiC single crystal growth furnace of crystal growth.
The present invention also provides a kind of above-mentioned ruhmkorff coil for the method for SiC single crystal growth furnace.
Technical scheme of the present invention is as follows:
For a ruhmkorff coil for SiC single crystal growth furnace, comprise the hollow coil of helical disk, be respectively arranged with cooling water intake and cooling water outlet at the two ends of hollow coil; It is characterized in that, the turn-to-turn of described hollow coil is apart from from top to bottom diminishing successively.The advantage herein designed is, the turn-to-turn of described hollow coil apart from diminishing successively from top to bottom, thus the Heating temperature of bonding crystals growth room to be distributed as seed crystal position low, SiC powder source position is high, thermograde in unit length is reduced, thus accelerates the speed of growth of crystal.
Preferred according to the present invention, the size formula that arranges of the turn-to-turn distance of described hollow coil is: d
i=(20-2 × (i-1)), unit mm, wherein d
ibe the size of i-th turn-to-turn distance, i is the order of turn-to-turn distance from top to bottom, the span of i: 1-10.
Preferred according to the present invention, the turn-to-turn of described hollow coil is apart from being from top to bottom gradient to as 2mm by 20mm successively.
Preferred according to the present invention, water coolant enters described hollow coil along cooling water intake, from bottom to top discharges along cooling water outlet.The advantage herein designed is, described cooling water outlet position is higher than cooling water intake, thus is carved with flow of cooling water when ensureing in hollow coil, guarantees cooling performance.
Preferred according to the present invention, the material of described hollow coil is T3 red copper; Preferably, the material of described cooling water intake and cooling water outlet is T3 red copper.The advantage herein designed is, described cooling water outlet and cooling water intake are connected to the two ends of hollow coil, and the material both it is also T3 red copper, keeps the consistent of thermal expansivity, avoids coil pipeline generation deformation.
Preferred according to the present invention, the cross section of described hollow coil is rectangle, and the long limit of the cross section of described hollow coil is parallel with the internal surface of single crystal growing room.The advantage herein designed is, described long limit and single crystal growing room can increase the contact area of current path, reduces magnetic leakage loss, is conducive to being uniformly distributed of magnetic field.Preferably, the length and width ratio of the cross section of described hollow coil is 3:1.
Above-mentioned ruhmkorff coil is used for a method for SiC single crystal growth furnace, comprises step as follows:
1) ruhmkorff coil described in single crystal growing indoor location;
2) water coolant enters hollow coil along cooling water intake, and from bottom to top discharge along cooling water outlet, the temperature range of described water coolant is 35-45 DEG C;
3) according to the atmosphere value of the condition adjustment single crystal growing indoor of growth SiC single crystal;
4) intermediate frequency induction heating power supply is passed to described ruhmkorff coil, single crystal growing room is heated.
Advantage of the present invention is:
The difference of the ruhmkorff coil that the present invention and traditional Si C single crystal growing system use is: design the turn-to-turn distance of ruhmkorff coil, by turn-to-turn apart from the design that diminishes gradually, density is no longer consistent, ensure that the temperature at seed crystal place is low with this, the temperature in SiC powder source is high, axial temperature needed for final formation single crystal growing is poor, and then improves single crystal growing speed, finally grows the SiC single crystal of high-quality.Ruhmkorff coil of the present invention, cooling water outlet are identical with the material of cooling water intake, to prevent from producing deformation in process of cooling.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention;
Fig. 2 is one-piece construction side-view of the present invention;
Fig. 3 is traditional ruhmkorff coil structural representation waiting turn-to-turn distance;
In fig. 1-3,1. hollow coil, 2. cooling water outlet, 3. cooling water intake.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail, but is not limited thereto.
As Figure 1-3.
Embodiment 1,
For a ruhmkorff coil for SiC single crystal growth furnace, comprise the hollow coil 1 of helical disk, be respectively arranged with cooling water intake 3 and cooling water outlet 2 at the two ends of hollow coil 1; The turn-to-turn of described hollow coil 1 is apart from from top to bottom diminishing successively.
The size formula that arranges of the turn-to-turn distance of described hollow coil is: d
i=(20-2 × (i-1)), unit mm, wherein d
ibe the size of i-th turn-to-turn distance, i is the order of turn-to-turn distance from top to bottom, the span of i: 1-10.
Water coolant enters described hollow coil 1 along cooling water intake 3, from bottom to top discharges along cooling water outlet 2.
Embodiment 2,
As described in Example 1 for a ruhmkorff coil for SiC single crystal growth furnace, its difference is, the turn-to-turn of described hollow coil is apart from being from top to bottom gradient to as 2mm by 20mm successively.
Embodiment 3,
As described in Example 1 for a ruhmkorff coil for SiC single crystal growth furnace, its difference is, the material of described hollow coil is T3 red copper; The material of described cooling water intake and cooling water outlet is T3 red copper.
Embodiment 4,
As described in Example 1 for a ruhmkorff coil for SiC single crystal growth furnace, its difference is, the cross section of described hollow coil is rectangle, and the long limit of the cross section of described hollow coil is parallel with the internal surface of single crystal growing room.
Embodiment 5,
As described in embodiment 1-4, ruhmkorff coil is used for a method for SiC single crystal growth furnace, comprises step as follows:
1) ruhmkorff coil described in single crystal growing indoor location;
2) water coolant enters hollow coil along cooling water intake, and from bottom to top discharge along cooling water outlet, the temperature range of described water coolant is 35-45 DEG C;
3) according to the atmosphere value of the condition adjustment single crystal growing indoor of growth SiC single crystal;
4) intermediate frequency induction heating power supply is passed to described ruhmkorff coil, single crystal growing room is heated.
Claims (7)
1., for a ruhmkorff coil for SiC single crystal growth furnace, comprise the hollow coil of helical disk, be respectively arranged with cooling water intake and cooling water outlet at the two ends of hollow coil; It is characterized in that, the turn-to-turn of described hollow coil is apart from from top to bottom diminishing successively.
2. a kind of ruhmkorff coil for SiC single crystal growth furnace according to claim 1, it is characterized in that, the size formula that arranges of the turn-to-turn distance of described hollow coil is: di=(20-2 × (i-1)), unit mm, wherein di is the size of i-th turn-to-turn distance, i is the order of turn-to-turn distance from top to bottom, the span of i: 1-10.
3. a kind of ruhmkorff coil for SiC single crystal growth furnace according to claim 1, is characterized in that, the turn-to-turn of described hollow coil is apart from being from top to bottom gradient to as 2mm by 20mm successively.
4. a kind of ruhmkorff coil for SiC single crystal growth furnace according to claim 1, is characterized in that, water coolant enters described hollow coil along cooling water intake, from bottom to top discharges along cooling water outlet.
5. a kind of ruhmkorff coil for SiC single crystal growth furnace according to claim 1, is characterized in that, the material of described hollow coil is T3 red copper; The material of described cooling water intake and cooling water outlet is T3 red copper.
6. a kind of ruhmkorff coil for SiC single crystal growth furnace according to claim 1, is characterized in that, the cross section of described hollow coil is rectangle, and the long limit of the cross section of described hollow coil is parallel with the internal surface of single crystal growing room.
7. as described in claim 1-6 any one, ruhmkorff coil is used for a method for SiC single crystal growth furnace, and it is characterized in that, it is as follows that the method comprising the steps of:
1) ruhmkorff coil described in single crystal growing indoor location;
2) water coolant enters hollow coil along cooling water intake, and from bottom to top discharge along cooling water outlet, the temperature range of described water coolant is 35-45 DEG C;
3) according to the atmosphere value of the condition adjustment single crystal growing indoor of growth SiC single crystal;
4) intermediate frequency induction heating power supply is passed to described ruhmkorff coil, single crystal growing room is heated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510617095.6A CN105200515A (en) | 2015-09-24 | 2015-09-24 | Induction coil for SiC single-crystal growth furnace and application thereof |
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| CN201510617095.6A CN105200515A (en) | 2015-09-24 | 2015-09-24 | Induction coil for SiC single-crystal growth furnace and application thereof |
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Cited By (16)
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|---|---|---|---|---|
| CN105696079A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field |
| CN106498370A (en) * | 2016-12-30 | 2017-03-15 | 东莞市天域半导体科技有限公司 | A kind of vacuum chamber high temperature CVD heating coil structures |
| CN108425146A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of method reducing the molten induction coil deformation in area and anti-deformation coil |
| CN109092910A (en) * | 2018-07-24 | 2018-12-28 | 山东钢铁股份有限公司 | A kind of method electromagnetic induction coil compensation heating equipment and its improve mill bar quality |
| CN109631646A (en) * | 2018-12-26 | 2019-04-16 | 安徽智磁新材料科技有限公司 | Utilize the regenerative apparatus and method of porous carbon and ferrofluid |
| CN109631647A (en) * | 2018-12-26 | 2019-04-16 | 安徽智磁新材料科技有限公司 | Utilize the heat accumulation method and device of foam copper and ferrofluid |
| CN109825875A (en) * | 2019-03-27 | 2019-05-31 | 中国科学院半导体研究所 | Carrier gas auxiliary PVT method prepares the device and method of wide bandgap semiconductor monocrystal material |
| CN110331439A (en) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | A kind of heating device for silicon carbide epitaxy |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
| CN110777430A (en) * | 2019-10-12 | 2020-02-11 | 济宁天岳新材料科技有限公司 | Method for growing large-size silicon carbide single crystal |
| CN110872727A (en) * | 2018-08-29 | 2020-03-10 | 北京北方华创微电子装备有限公司 | Reaction furnace and cooling method |
| CN113429115A (en) * | 2021-06-21 | 2021-09-24 | 中国原子能科学研究院 | Crucible, induction coil for cavity of crucible and material processing equipment |
| CN113461308A (en) * | 2021-06-21 | 2021-10-01 | 中国原子能科学研究院 | Induction coil and glass solidification device for radioactive waste liquid |
| CN113668051A (en) * | 2020-09-18 | 2021-11-19 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and process chamber thereof |
| CN114411237A (en) * | 2022-01-20 | 2022-04-29 | 南京晶升装备股份有限公司 | Variable-pitch flexible induction heating system and single crystal furnace |
| CN114688870A (en) * | 2020-12-25 | 2022-07-01 | 株洲弗拉德科技有限公司 | Inductor for high-temperature induction heating furnace and induction heating furnace |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105696079A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field |
| CN106498370A (en) * | 2016-12-30 | 2017-03-15 | 东莞市天域半导体科技有限公司 | A kind of vacuum chamber high temperature CVD heating coil structures |
| CN106498370B (en) * | 2016-12-30 | 2018-11-16 | 东莞市天域半导体科技有限公司 | A kind of vacuum chamber high temperature CVD heating coil structure |
| CN108425146A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of method reducing the molten induction coil deformation in area and anti-deformation coil |
| CN109092910A (en) * | 2018-07-24 | 2018-12-28 | 山东钢铁股份有限公司 | A kind of method electromagnetic induction coil compensation heating equipment and its improve mill bar quality |
| CN110872727A (en) * | 2018-08-29 | 2020-03-10 | 北京北方华创微电子装备有限公司 | Reaction furnace and cooling method |
| CN109631646A (en) * | 2018-12-26 | 2019-04-16 | 安徽智磁新材料科技有限公司 | Utilize the regenerative apparatus and method of porous carbon and ferrofluid |
| CN109631647A (en) * | 2018-12-26 | 2019-04-16 | 安徽智磁新材料科技有限公司 | Utilize the heat accumulation method and device of foam copper and ferrofluid |
| CN109825875A (en) * | 2019-03-27 | 2019-05-31 | 中国科学院半导体研究所 | Carrier gas auxiliary PVT method prepares the device and method of wide bandgap semiconductor monocrystal material |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
| CN110331439A (en) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | A kind of heating device for silicon carbide epitaxy |
| CN110777430A (en) * | 2019-10-12 | 2020-02-11 | 济宁天岳新材料科技有限公司 | Method for growing large-size silicon carbide single crystal |
| CN113668051A (en) * | 2020-09-18 | 2021-11-19 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and process chamber thereof |
| CN114688870A (en) * | 2020-12-25 | 2022-07-01 | 株洲弗拉德科技有限公司 | Inductor for high-temperature induction heating furnace and induction heating furnace |
| CN113429115A (en) * | 2021-06-21 | 2021-09-24 | 中国原子能科学研究院 | Crucible, induction coil for cavity of crucible and material processing equipment |
| CN113461308A (en) * | 2021-06-21 | 2021-10-01 | 中国原子能科学研究院 | Induction coil and glass solidification device for radioactive waste liquid |
| CN114411237A (en) * | 2022-01-20 | 2022-04-29 | 南京晶升装备股份有限公司 | Variable-pitch flexible induction heating system and single crystal furnace |
| CN114411237B (en) * | 2022-01-20 | 2023-11-28 | 南京晶升装备股份有限公司 | Flexible induction heating system with variable screw pitch and single crystal furnace |
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Application publication date: 20151230 |