CN1713401A - Germanium-silicon schottky diode and its production - Google Patents
Germanium-silicon schottky diode and its production Download PDFInfo
- Publication number
- CN1713401A CN1713401A CN 200510050890 CN200510050890A CN1713401A CN 1713401 A CN1713401 A CN 1713401A CN 200510050890 CN200510050890 CN 200510050890 CN 200510050890 A CN200510050890 A CN 200510050890A CN 1713401 A CN1713401 A CN 1713401A
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- Prior art keywords
- layer
- silicon
- germanium
- silicon nitride
- window
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000004411 aluminium Substances 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 abstract 2
- 238000009834 vaporization Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
The Schottky diode consists of: ohmic contact electrode stacked in sequence from bottom to top; silicon substrate and silicon nitride layer on which a window is opened, in the window there are germanium silicon layer and nisiloy layer. The nisiloy layer is above the germanium silicon layer. The aluminium electrode touching the nisiloy compound covers the window of silicon nitride. The making method includes following steps: first a silicon layer is developed on the silicon substrate; deposits a silicon dioxide layer on silicon nitride and photoetches a window; develops germanium silicon layer; with dilute hydrofluoric acid, strips silicon dioxide layer; metallic nickel is coated by vaporization on germanium silicon layer; anneal to form germanium silicon compound layer; coats by vaporization aluminium electrode and ohmic contact electrode.
Description
Technical field
The present invention relates to semiconductor device, is about germanium, silicon Schotty diode and preparation method thereof specifically.
Background technology
Schottky diode because of its have majority carrier work, response speed fast and do not have features such as few subproduct is tired be widely used in high frequency, at a high speed, aspect such as detection.Before the present invention makes, traditional germanium, silicon Schotty diode has Ohm contact electrode from bottom to top successively, layer-of-substrate silicon, the germanium and silicon epitaxial layer has the silicon nitride layer of window, the nisiloy compound layer is arranged in that the silicon nitride window is mid-, topped aluminium electrode on the silicon nitride window, the germanium silicon and the silicon nitride contact area of the germanium, silicon Schotty diode of this structure are big, and boundary defect is many, cause device creepage big.In the manufacturing process, adopt growth germanium silicon layer on silicon substrate earlier, again growth one deck silicon nitride on the germanium silicon layer.Because germanium silicon material at high temperature deformation relaxation can take place, thereby have only the low temperature depositing of employing silicon nitride, this brings bigger restriction for subsequently device isolation and integrated technique.
Summary of the invention
The purpose of this invention is to provide germanium, silicon Schotty diode of a kind of novel structure and preparation method thereof, to improve the quality of germanium, silicon Schotty diode antetype device.
Germanium, silicon Schotty diode of the present invention comprises silicon substrate, germanium silicon layer, the silicon nitride layer that has window, nisiloy compound layer, aluminium electrode and Ohm contact electrode, Ohm contact electrode, silicon substrate and the silicon nitride layer that has a window are repeatedly put from bottom to top successively, germanium silicon layer and nisiloy compound layer are in the window of silicon nitride layer, wherein the nisiloy compound layer covers the aluminium electrode that contacts with the nisiloy compound layer on the window of silicon nitride layer on the germanium silicon layer.
The manufacture method of germanium, silicon Schotty diode of the present invention may further comprise the steps:
1) cleaned silicon substrate is put into the low-pressure chemical vapor deposition device, under 700～800 ℃ with SiH
2Cl
2And NH
3Be source of the gas growth one deck silicon nitride layer, the thickness of silicon nitride is 0.5～0.6 μ m;
2) under 600 ℃ be with silane source of the gas at silicon nitride surface growth layer of silicon dioxide layer, the thickness of silicon dioxide is 0.2～0.3 μ m;
3) go out window at the silicon dioxide layer photomask surface, remove the exposed silicon nitride layer in window place with 180 ℃ hot phosphoric acid;
4) put into high vacuum chemical vapor phase growing apparatus growth germanium silicon layer, growth temperature is 550～650 ℃, makes the thickness of the thickness of germanium silicon layer less than silicon nitride;
5) be that 5% hydrofluoric acid is removed silicon dioxide layer with concentration, the germanium silicon layer that is deposited on the silicon dioxide layer also is removed simultaneously;
6) sample is put into evaporation equipment, adopting electron beam evaporation method is the metallic nickel of 10～30nm at silicon nitride and germanium silicon surface evaporation one bed thickness;
7) put into rapid heat-treatment furnace, annealed 30～90 seconds down for 400～700 ℃, form the nisiloy compound layer on the germanium silicon layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
8) the step 7) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides is aluminium electrode and the Ohm contact electrode of 200nm;
9) anti-carve electrode, remove the aluminium that deposits on the silicon nitride, under 450 ℃, carried out aluminium alloying at least 10 minutes then.
Above-mentioned silicon substrate can be that resistivity is 10
-3The heavy doping N type of Ω cm or P type silicon substrate.
Germanium, silicon Schotty diode of the present invention is because in the photoetching window that the germanium silicon layer only is confined to be surrounded by silicon nitride layer, significantly reduced the contact area of germanium silicon and dielectric layer, interphase density reduces, reduced the leakage current of device, improved the performance of device, these are different fully with traditional Schottky diode structure.Because the germanium silicon layer of device only is present in photoetching window place, thereby the device manufacturing need not any isolation technology, has simplified technology, has improved integrated level.
Description of drawings
Fig. 1 is the structural representation of germanium, silicon Schotty diode antetype device of the present invention.
Embodiment
Further specify the present invention below in conjunction with instantiation.
With reference to Fig. 1, germanium, silicon Schotty diode of the present invention comprises silicon substrate 1, germanium silicon layer 2, has the silicon nitride layer 3 of window, nisiloy compound layer 4, aluminium electrode 5 and Ohm contact electrode 6, Ohm contact electrode 6, silicon substrate 1 and the silicon nitride layer 3 that has a window are repeatedly put from bottom to top successively, germanium silicon layer 2 and nisiloy compound layer 4 are in the window of silicon nitride layer 3, wherein nisiloy compound layer 4 covers the aluminium electrode that contacts with the nisiloy compound layer on the window of silicon nitride layer on germanium silicon layer 2.
The manufacture method of germanium, silicon Schotty diode, step is as follows:
1) be to put into the low-pressure chemical vapor deposition device after the silicon substrate of 0.008 Ω cm cleans up with N type (100) resistivity, under 750 ℃ with SiH
2Cl
2And NH
3Be source of the gas growth one deck silicon nitride layer, the thickness of silicon nitride is 0.5 μ m;
2) under 600 ℃ be then with silane source of the gas at silicon nitride surface growth layer of silicon dioxide layer, the thickness of silicon dioxide is 0.2 μ m;
3) utilize standard photolithography process earlier to go out window at the silicon dioxide layer photomask surface, window size is according to the decision of photolithography plate size, removes the silicon nitride layer that the window place exposes with 180 ℃ hot phosphoric acid then;
4) photoetching is good sample is put into high vacuum chemical vapor phase growing apparatus growth germanium silicon layer, and growth temperature is 550 ℃, makes the thickness of the thickness of germanium silicon layer less than silicon nitride;
5) be that 5% hydrofluoric acid is removed silicon dioxide layer with concentration, the germanium silicon layer that is deposited on the silicon dioxide layer also is removed simultaneously;
6) sample is put into evaporation equipment, adopting electron beam evaporation method is the metallic nickel of 20nm at silicon nitride and germanium silicon surface evaporation one layer thickness;
7) put into rapid heat-treatment furnace, annealed 60 seconds down for 500 ℃, form the nisiloy compound layer on the germanium silicon layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
8) the step 7) resulting product is put into evaporation equipment, according to a conventional method on the goods two sides respectively evaporation thickness be aluminium electrode and the Ohm contact electrode of 200nm;
9) anti-carve electrode, remove the aluminium that deposits on the silicon nitride, under 450 ℃, carried out aluminium alloying 10 minutes then, make germanium, silicon Schotty diode of the present invention.
Claims (2)
1. germanium, silicon Schotty diode, comprise silicon substrate (1), germanium silicon layer (2), have the silicon nitride layer (3) of window, nisiloy compound layer (4), aluminium electrode (5) and Ohm contact electrode (6), it is characterized in that Ohm contact electrode (6), silicon substrate (1) and the silicon nitride layer (3) that has a window are repeatedly put from bottom to top successively, germanium silicon layer (2) and nisiloy compound layer (4) are in the window of silicon nitride layer (3), wherein nisiloy compound layer (4) covers the aluminium electrode (5) that contacts with nisiloy compound layer (4) on the window of silicon nitride layer on germanium silicon layer (2).
2. the manufacture method of the described germanium, silicon Schotty diode of claim 1 is characterized in that step is as follows:
1) cleaned silicon substrate is put into the low-pressure chemical vapor deposition device, under 700～800 ℃ with SiH
2Cl
2And NH
3Be source of the gas growth one deck silicon nitride layer, the thickness of silicon nitride is 0.5～0.6 μ m;
2) under 600 ℃ be with silane source of the gas at silicon nitride surface growth layer of silicon dioxide layer, the thickness of silicon dioxide is 0.2～0.3 μ m;
3) go out window at the silicon dioxide layer photomask surface, remove the exposed silicon nitride layer in window place with 180 ℃ hot phosphoric acid;
4) put into high vacuum chemical vapor phase growing apparatus growth germanium silicon layer, growth temperature is 550～650 ℃, makes the thickness of the thickness of germanium silicon layer less than silicon nitride;
5) be that 5% hydrofluoric acid is removed silicon dioxide layer with concentration, the germanium silicon layer that is deposited on the silicon dioxide layer also is removed simultaneously;
6) sample is put into evaporation equipment, adopting electron beam evaporation method is the metallic nickel of 10～30nm at silicon nitride and germanium silicon surface evaporation one bed thickness;
7) put into rapid heat-treatment furnace, annealed 30～90 seconds down for 400～700 ℃, form the nisiloy compound layer on the germanium silicon layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
8) the step 7) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides is aluminium electrode and the Ohm contact electrode of 200nm;
9) anti-carve electrode, remove the aluminium that deposits on the silicon nitride, under 450 ℃, carried out aluminium alloying at least 10 minutes then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100508908A CN100372128C (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon schottky diode and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100508908A CN100372128C (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon schottky diode and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1713401A true CN1713401A (en) | 2005-12-28 |
| CN100372128C CN100372128C (en) | 2008-02-27 |
Family
ID=35718921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100508908A Expired - Fee Related CN100372128C (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon schottky diode and its production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100372128C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452842B (en) * | 2007-11-30 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Production method for metal electrode capable of reducing leakage current of device |
| CN101964351A (en) * | 2010-08-13 | 2011-02-02 | 中国科学院上海微系统与信息技术研究所 | Phase change memory using compound semiconductor-based Schottky barrier diode as switch and method |
| CN102545784A (en) * | 2010-12-08 | 2012-07-04 | 中国科学院微电子研究所 | Composite left-right hand nonlinear transmission line microwave frequency doubling circuit and manufacturing method thereof |
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6184564B1 (en) * | 1998-12-28 | 2001-02-06 | International Rectifier Corp. | Schottky diode with adjusted barrier height and process for its manufacture |
| JP2003017713A (en) * | 2001-07-04 | 2003-01-17 | Matsushita Electric Ind Co Ltd | Schottky barrier diode |
| CN1230914C (en) * | 2003-03-25 | 2005-12-07 | 浙江大学 | Schottky diode prototyping element and preparation thereof |
| US6825073B1 (en) * | 2003-09-17 | 2004-11-30 | Chip Integration Tech Co., Ltd. | Schottky diode with high field breakdown and low reverse leakage current |
| CN2826698Y (en) * | 2005-07-28 | 2006-10-11 | 浙江大学 | Germanium-silicon Schottky diode |
-
2005
- 2005-07-28 CN CNB2005100508908A patent/CN100372128C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452842B (en) * | 2007-11-30 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Production method for metal electrode capable of reducing leakage current of device |
| CN101964351A (en) * | 2010-08-13 | 2011-02-02 | 中国科学院上海微系统与信息技术研究所 | Phase change memory using compound semiconductor-based Schottky barrier diode as switch and method |
| CN102545784A (en) * | 2010-12-08 | 2012-07-04 | 中国科学院微电子研究所 | Composite left-right hand nonlinear transmission line microwave frequency doubling circuit and manufacturing method thereof |
| CN102545784B (en) * | 2010-12-08 | 2014-10-22 | 中国科学院微电子研究所 | Composite left-right hand nonlinear transmission line microwave frequency doubling circuit and manufacturing method thereof |
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10295745B2 (en) | 2015-01-05 | 2019-05-21 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100372128C (en) | 2008-02-27 |
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