CN2826699Y - Germanium-silicon Schottky diode - Google Patents
Germanium-silicon Schottky diode Download PDFInfo
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- CN2826699Y CN2826699Y CN 200520013605 CN200520013605U CN2826699Y CN 2826699 Y CN2826699 Y CN 2826699Y CN 200520013605 CN200520013605 CN 200520013605 CN 200520013605 U CN200520013605 U CN 200520013605U CN 2826699 Y CN2826699 Y CN 2826699Y
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- silicon
- germanium
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- window
- silicon dioxide
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Abstract
The utility model relates to a germanium silicon Schottky diode which comprises an ohmic contact electrode, a silicon bulk, and a silicon dioxide layer with a window, which are folded in order. A germanium silicon extended layer and a nisiloy compound layer are arranged in the window of the silicon dioxide layer, the nisiloy compound layer is arranged on the germanium silicon extended layer, and an aluminium electrode contacted with the nisiloy compound layer is covered on the window of the silicon dioxide layer. Because the germanium silicon extended layer can only grow in the position of a silicon dioxide photoetching window, the germanium silicon Schottky diode with the structure can effectively decrease the reverse creepage of the device. The manufacture of the device does not need any isolation, the technology is simplified and the density of integration is enhanced.
Description
Technical field
The utility model relates to semiconductor device, is about the germanium, silicon Schotty diode antetype device specifically.
Background technology
Schottky diode because of its have majority carrier work, response speed fast and do not have features such as few subproduct is tired be widely used in high frequency, at a high speed, aspect such as detection.Before the utility model is made, traditional germanium, silicon Schotty diode has Ohm contact electrode from bottom to top successively, layer-of-substrate silicon, the germanium and silicon epitaxial layer has the silicon dioxide layer of window, is equipped with the nisiloy compound layer in the silicon dioxide window, topped aluminium electrode on the silicon dioxide window, the germanium silicon and the silicon dioxide contact area of the germanium, silicon Schotty diode of this structure are big, and boundary defect is many, causes device creepage big.In the manufacturing process, adopt growing epitaxial germanium silicon layer on silicon substrate earlier, the layer of silicon dioxide of on the epitaxial Germanium silicon layer, growing again.Because germanium silicon material at high temperature deformation relaxation can take place, thereby have only the low temperature depositing of employing silicon dioxide, this brings bigger restriction for subsequently device isolation and integrated technique.
Summary of the invention
The purpose of this utility model provides a kind of germanium, silicon Schotty diode of novel structure, to improve the quality of germanium, silicon Schotty diode antetype device.
Germanium, silicon Schotty diode of the present utility model comprises silicon substrate, germanium and silicon epitaxial layer, the silicon dioxide layer that has window, nisiloy compound layer, aluminium electrode and Ohm contact electrode, Ohm contact electrode, silicon substrate and the silicon dioxide layer that has a window are repeatedly put from bottom to top successively, germanium and silicon epitaxial layer and nisiloy compound layer are in the window of silicon dioxide layer, wherein the nisiloy compound layer covers the aluminium electrode that contacts with the nisiloy compound layer on the window of silicon dioxide layer on the germanium and silicon epitaxial layer.
The manufacture method of germanium, silicon Schotty diode may further comprise the steps:
1) puts into thermal oxidation furnace after silicon substrate is cleaned up, feed pure oxygen in the silicon dioxide layer of 900～1200 ℃ of following thermal oxidation one deck 0.6～0.7 μ m;
2) make window by lithography on silicon dioxide layer, put into the growth room of high vacuum chemical vapor deposition apparatus after the cleaning, the growth room vacuumizes at least 10
-5Pa;
3) growth is had the silicon substrate of silicon dioxide layer be heated to 500～600 ℃, the growth room feeds pure silicon source and pure germanium alkane, and control pure silicon source and pure germanium alkane flow-rate ratio are 5: 2sccm, growth room's pressure 10
-2～10Pa is at silicon dioxide window place growth 0.1～0.2 μ m germanium and silicon epitaxial layer;
4) the step 3) resulting product is put into evaporation equipment, evaporation one bed thickness is the metallic nickel of 10～30nm on the germanium and silicon epitaxial layer;
5) put into rapid heat-treatment furnace, annealed 30～90 seconds down for 400～700 ℃, form the nisiloy compound layer on the germanium and silicon epitaxial layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
6) the step 5) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides is aluminium electrode and the Ohm contact electrode of 200nm;
7) anti-carve electrode, remove the aluminium that deposits on the silicon dioxide, under 450 ℃, carried out aluminium alloying at least 10 minutes then.
Above-mentioned silicon substrate can be that resistivity is 10
-3The heavy doping N type of Ω cm or P type silicon substrate.Said silicon source can be the silane or the disilane of purity＞99.99%; The purity of germane＞99.99%; The purity of oxygen source＞99.99%.
Germanium, silicon Schotty diode of the present utility model is because in the photoetching window that the germanium and silicon epitaxial layer only is confined to be surrounded by silicon dioxide layer, significantly reduced the contact area of germanium silicon and silicon dioxide, interphase density reduces, reduced the leakage current of device, improved the performance of device, these are different fully with traditional Schottky diode structure.Because the germanium and silicon epitaxial layer of device is only in the growth of photoetching window place, thereby the device manufacturing need not any isolation technology, has simplified technology, has improved integrated level.
Description of drawings
Fig. 1 is the structural representation of germanium, silicon Schotty diode antetype device of the present utility model.
Embodiment
Further specify the utility model below in conjunction with instantiation.
With reference to Fig. 1, germanium, silicon Schotty diode of the present utility model comprises silicon substrate 1, germanium and silicon epitaxial layer 2, has the silicon dioxide layer 3 of window, nisiloy compound layer 4, aluminium electrode 5 and Ohm contact electrode 6, Ohm contact electrode 6, silicon substrate 1 and the silicon dioxide layer 3 that has a window are repeatedly put from bottom to top successively, germanium and silicon epitaxial layer 2 and nisiloy compound layer 4 are in the window of silicon dioxide layer 3, wherein nisiloy compound layer 4 covers the aluminium electrode 5 that contacts with nisiloy compound layer 4 on the window of silicon dioxide layer on germanium and silicon epitaxial layer 2.
The manufacture method of germanium, silicon Schotty diode, step is as follows:
1) is to put into thermal oxidation furnace after the silicon substrate of 0.008 Ω cm cleans up with N type (100) resistivity, feeds pure oxygen in the silicon dioxide layer of 1100 ℃ of following thermal oxidation one deck 0.6 μ m;
2) on silicon dioxide layer, make 6 * 6mm by lithography
2Window is put into the growth room of high vacuum chemical vapor deposition apparatus after the cleaning, the growth room vacuumizes at least 10
-5Pa;
3) growth there is the silicon substrate of silicon dioxide layer be heated to 550 ℃, it is that 99.999% silane and purity are 99.999% germane that the growth room feeds purity, the flow of control silane and germane is respectively 5sccm, 2sccm, the pressure 0.1Pa of growth room, the 0.2 μ m germanium and silicon epitaxial layer of growing at silicon dioxide window place.
4) the step 3) resulting product is put into evaporation equipment, evaporation one bed thickness is the metallic nickel of 20nm on the germanium and silicon epitaxial layer according to a conventional method;
5) put into rapid heat-treatment furnace and annealed 60 seconds down for 500 ℃, form the nisiloy compound layer on the germanium and silicon epitaxial layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
6) the step 5) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides according to a conventional method is aluminium electrode and the Ohm contact electrode of 200nm;
7) anti-carve electrode, remove the aluminium that deposits on the silicon dioxide, under 450 ℃, carried out aluminium alloying 15 minutes then, make germanium, silicon Schotty diode of the present utility model.
Claims (1)
1. germanium, silicon Schotty diode, comprise silicon substrate (1), germanium and silicon epitaxial layer (2), have the silicon dioxide layer (3) of window, nisiloy compound layer (4), aluminium electrode (5) and Ohm contact electrode (6), it is characterized in that Ohm contact electrode (6), silicon substrate (1) and the silicon dioxide layer (3) that has a window are repeatedly put from bottom to top successively, germanium and silicon epitaxial layer (2) and nisiloy compound layer (4) are in the window of silicon dioxide layer (3), wherein nisiloy compound layer (4) covers the aluminium electrode (5) that contacts with nisiloy compound layer (4) on the window of silicon dioxide layer on germanium and silicon epitaxial layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520013605 CN2826699Y (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520013605 CN2826699Y (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2826699Y true CN2826699Y (en) | 2006-10-11 |
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ID=37066881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520013605 Expired - Fee Related CN2826699Y (en) | 2005-07-28 | 2005-07-28 | Germanium-silicon Schottky diode |
Country Status (1)
| Country | Link |
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| CN (1) | CN2826699Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372129C (en) * | 2005-07-28 | 2008-02-27 | 浙江大学 | Germanium, silicon Schotty diode and preparation method |
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
-
2005
- 2005-07-28 CN CN 200520013605 patent/CN2826699Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372129C (en) * | 2005-07-28 | 2008-02-27 | 浙江大学 | Germanium, silicon Schotty diode and preparation method |
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10295745B2 (en) | 2015-01-05 | 2019-05-21 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |