CN100372129C - Germanium, silicon Schotty diode and preparation method - Google Patents
Germanium, silicon Schotty diode and preparation method Download PDFInfo
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- CN100372129C CN100372129C CNB2005100508927A CN200510050892A CN100372129C CN 100372129 C CN100372129 C CN 100372129C CN B2005100508927 A CNB2005100508927 A CN B2005100508927A CN 200510050892 A CN200510050892 A CN 200510050892A CN 100372129 C CN100372129 C CN 100372129C
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Abstract
The present invention relates to a germanium silicon Schottky diode and a manufacture method thereof. The present invention comprises an ohmic contact electrode, a silicon substrate and a silicon dioxide layer which are orderly superposed from bottom to top, wherein a window is arranged on the silicon dioxide layer; a germanium silicon extension layer and a nickel silicon compound layer are arranged in the window of the silicon dioxide layer, wherein the nickel silicon compound layer is arranged on the germanium silicon extension layer; an aluminum electrode contacted with the nickel silicon compound layer is covered on the window of the silicon dioxide layer. The present invention has the manufacture steps that first, the silicon dioxide layer is in thermal oxidation on the silicon substrate, and the window is in photoetching on the silicon dioxide layer; then, the germanium silicon extension layer grows at the window by using ultra high vacuum chemical vapor depositing equipment; next, metallic nickel is coated through vaporization on the germanium silicon extension layer by evaporating equipment; a nickel silicon compound layer is formed by anneal; the aluminum electrode and the ohmic contact electrode are coated through vaporization. Because the germanium silicon extension layer of the present invention only grows at the silicon dioxide photoetching window, reverse leakage current of the present invention is effectively reduced, and the manufacture of the present invention does not need any isolation; the process is simplified, and the integration degree is enhanced.
Description
Technical field
The present invention relates to semiconductor device, is about germanium, silicon Schotty diode antetype device and preparation method thereof specifically.
Background technology
Schottky diode because of its have majority carrier work, response speed fast and do not have features such as few subproduct is tired be widely used in high frequency, at a high speed, aspect such as detection.Before the present invention makes, traditional germanium, silicon Schotty diode has Ohm contact electrode from bottom to top successively, layer-of-substrate silicon, the germanium and silicon epitaxial layer has the silicon dioxide layer of window, is equipped with the nisiloy compound layer in the silicon dioxide window, topped aluminium electrode on the silicon dioxide window, the germanium silicon and the silicon dioxide contact area of the germanium, silicon Schotty diode of this structure are big, and boundary defect is many, causes device creepage big.In the manufacturing process, adopt growing epitaxial germanium silicon layer on silicon substrate earlier, the layer of silicon dioxide of on the epitaxial Germanium silicon layer, growing again.Because germanium silicon material at high temperature deformation relaxation can take place, thereby have only the low temperature depositing of employing silicon dioxide, this brings bigger restriction for subsequently device isolation and integrated technique.
Summary of the invention
The purpose of this invention is to provide germanium, silicon Schotty diode of a kind of novel structure and preparation method thereof, to improve the quality of germanium, silicon Schotty diode antetype device.
Germanium, silicon Schotty diode of the present invention comprises silicon substrate, germanium and silicon epitaxial layer, the silicon dioxide layer that has window, nisiloy compound layer, aluminium electrode and Ohm contact electrode, Ohm contact electrode, silicon substrate and the silicon dioxide layer that has a window are repeatedly put from bottom to top successively, germanium and silicon epitaxial layer and nisiloy compound layer are in the window of silicon dioxide layer, wherein the nisiloy compound layer covers the aluminium electrode that contacts with the nisiloy compound layer on the window of silicon dioxide layer on the germanium and silicon epitaxial layer.
The manufacture method of germanium, silicon Schotty diode may further comprise the steps:
1) puts into thermal oxidation furnace after silicon substrate is cleaned up, feed pure oxygen in the silicon dioxide layer of 900～1200 ℃ of following thermal oxidation one deck 0.6～0.7 μ m;
2) make window by lithography on silicon dioxide layer, put into the growth room of high vacuum chemical vapor deposition apparatus after the cleaning, the growth room vacuumizes at least 10
-5Pa;
3) growth is had the silicon substrate of silicon dioxide layer be heated to 500～600 ℃, the growth room feeds pure silicon source and pure germanium alkane, and control pure silicon source and pure germanium alkane flow-rate ratio are 5: 2, growth room's pressure 10
-2～10Pa is at silicon dioxide window place growth 0.1～0.2 μ m germanium and silicon epitaxial layer;
4) the step 3) resulting product is put into evaporation equipment, evaporation one bed thickness is the metallic nickel of 10～30nm on the germanium and silicon epitaxial layer;
5) put into rapid heat-treatment furnace, annealed 30～90 seconds down for 400～700 ℃, form the nisiloy compound layer on the germanium and silicon epitaxial layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
6) the step 5) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides is aluminium electrode and the Ohm contact electrode of 200nm;
7) anti-carve electrode, remove the aluminium that deposits on the silicon dioxide, under 450 ℃, carried out aluminium alloying at least 10 minutes then.
Above-mentioned silicon substrate can be that resistivity is 10
-3The heavy doping N type of Ω cm or P type silicon substrate.Said silicon source can be the silane or the disilane of purity＞99.99%; The purity of germane＞99.99%; The purity of oxygen source＞99.99%.
Germanium, silicon Schotty diode of the present invention is because in the photoetching window that the germanium and silicon epitaxial layer only is confined to be surrounded by silicon dioxide layer, significantly reduced the contact area of germanium silicon and silicon dioxide, interphase density reduces, reduced the leakage current of device, improved the performance of device, these are different fully with traditional Schottky diode structure.Because the germanium and silicon epitaxial layer of device is only in the growth of photoetching window place, thereby the device manufacturing need not any isolation technology, has simplified technology, has improved integrated level.
Description of drawings
Fig. 1 is the structural representation of germanium, silicon Schotty diode antetype device of the present invention.
Embodiment
Further specify the present invention below in conjunction with instantiation.
With reference to Fig. 1, germanium, silicon Schotty diode of the present invention comprises silicon substrate 1, germanium and silicon epitaxial layer 2, has the silicon dioxide layer 3 of window, nisiloy compound layer 4, aluminium electrode 5 and Ohm contact electrode 6, Ohm contact electrode 6, silicon substrate 1 and the silicon dioxide layer 3 that has a window are repeatedly put from bottom to top successively, germanium and silicon epitaxial layer 2 and nisiloy compound layer 4 are in the window of silicon dioxide layer 3, wherein nisiloy compound layer 4 covers the aluminium electrode 5 that contacts with nisiloy compound layer 4 on the window of silicon dioxide layer on germanium and silicon epitaxial layer 2.
The manufacture method of germanium, silicon Schotty diode, step is as follows:
1) is to put into thermal oxidation furnace after the silicon substrate of 0.008 Ω cm cleans up with N type (100) resistivity, feeds pure oxygen in the silicon dioxide layer of 1100 ℃ of following thermal oxidation one deck 0.6 μ m;
2) on silicon dioxide layer, make 6 * 6mm by lithography
2Window is put into the growth room of high vacuum chemical vapor deposition apparatus after the cleaning, the growth room vacuumizes at least 10
-5Pa;
3) growth there is the silicon substrate of silicon dioxide layer be heated to 550 ℃, it is that 99.999% silane and purity are 99.999% germane that the growth room feeds purity, the flow of control silane and germane is respectively 5sccm, 2sccm, the pressure 0.1Pa of growth room, the 0.2 μ m germanium and silicon epitaxial layer of growing at silicon dioxide window place.
4) the step 3) resulting product is put into evaporation equipment, evaporation one bed thickness is the metallic nickel of 20nm on the germanium and silicon epitaxial layer according to a conventional method;
5) put into rapid heat-treatment furnace and annealed 60 seconds down for 500 ℃, form the nisiloy compound layer on the germanium and silicon epitaxial layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
6) the step 5) resulting product is put into evaporation equipment, evaporation is thick respectively on the goods two sides according to a conventional method is aluminium electrode and the Ohm contact electrode of 200nm;
7) anti-carve electrode, remove the aluminium that deposits on the silicon dioxide, under 450 ℃, carried out aluminium alloying 15 minutes then, make germanium, silicon Schotty diode of the present invention.
Claims (4)
1. the manufacture method of germanium, silicon Schotty diode is characterized in that step is as follows:
1) puts into thermal oxidation furnace after silicon substrate is cleaned up, feed pure oxygen in the silicon dioxide layer of 900～1200 ℃ of following thermal oxidation one deck 0.6～0.7 μ m;
2) make window by lithography on silicon dioxide layer, put into the growth room of high vacuum chemical vapor deposition apparatus after the cleaning, the growth room vacuumizes at least 10
-5Pa;
3) growth is had the silicon substrate of silicon dioxide layer be heated to 500～600 ℃, the growth room feeds pure silicon source and pure germanium alkane, and control pure silicon source and pure germanium alkane flow-rate ratio are 5: 2, growth room's pressure 10
-2～10Pa is at silicon dioxide window place growth 0.1～0.2 μ m germanium and silicon epitaxial layer;
4) the step 3) resulting product is put into evaporation equipment, evaporation one bed thickness is the metallic nickel of 10～30nm on the germanium and silicon epitaxial layer;
5) put into rapid heat-treatment furnace, annealed 30～90 seconds down for 400～700 ℃, form the nisiloy compound layer on the germanium and silicon epitaxial layer at window place, 1: 1 the concentrated sulfuric acid and hydrogen peroxide cleaning are adopted in the cooling back;
6) the step 5) resulting product is put into evaporation equipment, thick at the silicon dioxide layer evaporation is the covering window of 200nm and the aluminium electrode that contacts with the nisiloy compound layer, and thick at the another side evaporation of silicon substrate is the Ohm contact electrode of 200nm;
7) anti-carve electrode, remove the aluminium that deposits on the silicon dioxide, under 450 ℃, carried out aluminium alloying at least 10 minutes then.
2. the manufacture method of germanium, silicon Schotty diode according to claim 1 is characterized in that said pure silicon source is the silane or the disilane of purity＞99.99%.
3. the manufacture method of germanium, silicon Schotty diode according to claim 1 is characterized in that purity＞99.99% of pure germanium alkane.
4. the manufacture method of germanium, silicon Schotty diode according to claim 1 is characterized in that purity＞99.99% of pure oxygen.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100508927A CN100372129C (en) | 2005-07-28 | 2005-07-28 | Germanium, silicon Schotty diode and preparation method |
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|---|---|---|---|
| CNB2005100508927A CN100372129C (en) | 2005-07-28 | 2005-07-28 | Germanium, silicon Schotty diode and preparation method |
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| CN1728405A CN1728405A (en) | 2006-02-01 |
| CN100372129C true CN100372129C (en) | 2008-02-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316201A (en) * | 1980-05-08 | 1982-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Low-barrier-height epitaxial Ge-GaAs mixer diode |
| JPH0982988A (en) * | 1995-09-14 | 1997-03-28 | Toshiba Corp | Semiconductor device |
| CN2826699Y (en) * | 2005-07-28 | 2006-10-11 | 浙江大学 | Germanium-silicon Schottky diode |
-
2005
- 2005-07-28 CN CNB2005100508927A patent/CN100372129C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316201A (en) * | 1980-05-08 | 1982-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Low-barrier-height epitaxial Ge-GaAs mixer diode |
| JPH0982988A (en) * | 1995-09-14 | 1997-03-28 | Toshiba Corp | Semiconductor device |
| CN2826699Y (en) * | 2005-07-28 | 2006-10-11 | 浙江大学 | Germanium-silicon Schottky diode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10295745B2 (en) | 2015-01-05 | 2019-05-21 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
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| CN1728405A (en) | 2006-02-01 |
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