CN101038876A - Method for preparing NiSi/Si Schottky diode using interface oxide layer - Google Patents
Method for preparing NiSi/Si Schottky diode using interface oxide layer Download PDFInfo
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- CN101038876A CN101038876A CN 200710037274 CN200710037274A CN101038876A CN 101038876 A CN101038876 A CN 101038876A CN 200710037274 CN200710037274 CN 200710037274 CN 200710037274 A CN200710037274 A CN 200710037274A CN 101038876 A CN101038876 A CN 101038876A
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- schottky diode
- nisi
- oxide layer
- metallic nickel
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Abstract
The invention belongs to microelectronic technology field, concretely, relates to a new method for making NiSi/Si schottky diode. The method includes steps as following: the substrate silicon wafer is washed in standard RCA procedure and employs attenuant HF to eliminate native oxide layer, and then employs chemical oxidation process to form a oxide layer of silicon on the silicon wafer surface before being sputtered and deposited with metallic nickel electrode by means of mask plate; and then the silicon wafer is quickly annealed and selectively corrupted, after the deposition of the metallic nickel electrodes, thereby forming NiSi/Si schottky diode. The method can greatly improve the rectifying properties of the NiSi/Si schottky diode made by employing mask plate and has advantage of simple process. Comparing with the schottky diode without interface oxide layer in same process technology, the performance of the current schottky diode is greatly improved.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to a kind of new method of utilizing mask to prepare the NiSi/Si Schottky diode.
Background technology
Schottky (Schottky) diode is to utilize between metal and the semiconductor contact berrier to carry out work, have a kind of majority carrier device of rectifying effect.Because this diode is compared with common P-N junction diode, has advantages such as forward voltage drop is little, speed is fast, thereby in modern communications, ultrahigh-speed device, microwave circuit and high speed integrated circuit, has application widely.
The conventional schottky manufacture method has two kinds: 1) the metal mask version with middle punching covers clean silicon chip surface, adopts the method for sputter or evaporation directly to form point-like metal/Si or form point-like metal silicide/Si Schottky diode by annealing in process on silicon chip; 2) replace the metal mask version with photoetching technique, finally also can obtain the Schottky diode that needs.Preceding a kind of method does not relate to complicated step such as photoetching, has advantage of simple technology, and cost is lower, thereby has obtained using widely.But because the metal mask version must possess certain mechanics hardness, thereby make the infinitely attenuation of its thickness.And the existence of mask thickness causes physical vapor deposition techniques such as sputter or evaporation to have " shadow " effect, finally causes the corresponding thickness of metal film in the pattern edge below of hollow out on the mask different with the regional corresponding metal film thickness of centre of figure.Generally " shadow " effect causes the edge metal film thin partially, and makes the step shape at metal film edge become not precipitous.This unfavorable edge effect often causes the performance degradation of metal/Si point-like Schottky diode, has particularly seriously reduced the characteristic that annealed processing forms the Schottky diode of metal silicide/Si contact.
The present invention handles by metal mask version sputtering deposit metallic nickel (Ni) electrode and with rapid thermal annealing (RTA) and forms the NiSi/Si contact, again with the H that boils
2SO
4+ H
2O
2Mixed liquid remove the metallic nickel of participating in reaction, finally obtain high-performance NiSi/Si Schottky diode.To utilize the metal mask version to prepare the method for Schottky diode different with routine, and the present invention must carry out chemical oxidation treatment to clean silicon chip surface before the sputtering deposit metallic nickel, make it to form the Si oxide of a layer thickness at several atomic layers.
Summary of the invention
The objective of the invention is to propose a kind of photoetching process that can avoid complexity, can improve the preparation method of the Schottky diode of Schottky diode characteristic simultaneously again.
The preparation method of the Schottky diode that the present invention proposes, be after silicon substrate is removed native oxide layer through standard RCA cleaning and with the HF acid of dilution, before utilizing mask sputtering deposit metallic nickel electrode, adopt the oxide skin(coating) of chemical oxidation process at the silicon chip surface silicon growth layer; After the metallic nickel electrodeposition, silicon chip is carried out rapid thermal annealing and selective etching processing then, thereby form the NiSi/Si Schottky diode.
Concrete operations step of the present invention is as follows:
1) N type (100) Si sheet after standard RCA method is cleaned, is the native oxide layer of 2% HF diluent liquid removal silicon chip with concentration;
2) utilize chemical oxidation method to generate the oxide of one deck silicon at silicon chip surface: thickness is 3-10 atomic layer; So-called chemical oxidation method specifically refers to the Si sheet is put into HCl: H
2O
2: H
2O (volume ratio)=(2～4): (0.8～1.2): boiled in the solution of (0.8～1.2) 4-10 minute;
3) use the mask method at Si sheet front sputtering deposit metallic nickel electrode, thickness is 25～40nm;
4) sample is carried out quick thermal annealing process, generate the NiSi/Si contact.General annealing temperature is 450～550 ℃, during annealing
Between be 45-80S;
5) sample is immersed selective corrosion liquid and remove the nickel of not participating in reaction, corrosive liquid is the H that boils
2SO
4: H
2O
2The mixed liquid of=4: 1 (volume ratio), the immersion time is 50～80S;
6) sample back side sputtering deposit Ti and Al in succession forms the ohmic contact back electrode.The thickness of Ti layer and Al layer is with the conventional back electrode that contacts, Ti 40nm for example, Al80nm;
In conventional method, do not comprise above-mentioned steps 2) processing.Step 2) is exactly the processing step that the present invention increases newly.The contrast of the Schottky diode characteristic that the Schottky diode of being made by conventional method and the present invention make as can be known, the diode characteristic of the inventive method preparation is greatly improved:
1. reverse leakage current is relatively:
As shown in Figure 1, the NiSi/Si Schottky diode is applied reverse 1V bias voltage, measure and add up the reverse leakage current density of＞20 diodes.As seen from the figure, the reverse leakage current density of the diode of the inventive method preparation is than little 3 orders of magnitude of reverse leakage current of conventional method preparation, thereby the characteristic of diode is greatly improved.
2. Schottky barrier is relatively:
Electric current-voltage data during surveying record NiSi/Si Schottky diode forward 0～1V utilizes classical heat emission model to the data match, can extract the barrier height of this diode correspondence.As shown in Figure 2, the barrier height of＞20 diodes of statistics distributes.As seen from the figure, the barrier diode height of the inventive method preparation distributes not only more evenly but also about the height big 0.2eV of barrier height than the diode of conventional method preparation.The characteristic of diode is greatly improved.
3. ideal factor is relatively:
The electrology characteristic of NiSi/Si Schottky diode can well be described by classical heat emission model, and wherein ideal factor is an important parameter of weighing diode characteristic.Ideal factor is more near 1, and diode characteristic is thought with regard to unreasonable.As shown in Figure 3, the diode characteristic of the inventive method preparation is more a lot of than the improvement of conventional method preparation.
Description of drawings
The Schottky diode reverse leakage current Distribution Statistics that Fig. 1 conventional method and the inventive method are made relatively.
The Schottky diode Schottky barrier Distribution Statistics that Fig. 2 conventional method and the inventive method are made relatively.
The Schottky diode ideal factor Distribution Statistics that Fig. 3 conventional method and the inventive method are made relatively.
Fig. 4 the inventive method is made the sample structure generalized section before the Schottky diode depositing metal.
Number in the figure: 1 is silicon chip, and 2 is silicon oxide layer, and 3 is the metal mask version, and 4 is splash-proofing sputtering metal nickel.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
1. clean N type (100) crystal orientation silicon chip with standard RCA technology;
2. after silicon chip then cleans the removal native oxide layer with 2% (volume ratio) hydrofluoric acid (HF) solution, use deionized water rinsing 10 minutes, dry, obtain clean Si surface;
3. at the mixed liquid (HCl: H of hydrochloric acid+hydrogen peroxide+deionized water
2O
2: H
2O=3: 1: 1, volume ratio) boiled silicon chip 5 minutes in the liquid that boils, to generate the thin oxide layer of silicon at silicon chip surface;
4. washed silicon chip 10 minutes with ionized water, dry;
5. have the molybdenum mask of circular opening (1 millimeter of diameter) to cover clean silicon chip front with the centre, sample structure as shown in Figure 4 at this moment.Utilize ion beam sputtering system (the multi-functional sputter of Oxford) at silicon chip front sputtering deposit metallic nickel (Ni) then, thickness is 30 nanometers;
6. remove mask, the silicon chip that has the metal dots electrode is further at high pure nitrogen (N
2) do 500 degree quick thermal annealing process, 1 minute time under the atmosphere;
7. with the dioxysulfate water mixed solution (H that boils
2SO
4: H
2O
2=4: 1, volume ratio) sample is carried out corrosion in 1 minute after, used deionized water rinsing again 10 minutes, and dry;
8. sputter 20 nanometer Ti and 80 nanometer Al in succession at the sample back side finish the making of Ohm contact electrode;
9. measure the Schottky diode current-voltage characteristic with Keithley 2400 sources table one measuring instrument, obtain the reverse leakage current density; And according to classical heat emission model thereby match extracts schottky barrier height and ideal factor to current and voltage data.By accompanying drawing 1,2 and 3 as can be known, the Schottky diode characteristic of the present invention's preparation has obtained very big improvement.
Claims (2)
1, a kind of method for preparing the NiSi/Si Schottky diode, it is characterized in that: after silicon substrate is removed native oxide layer through standard RCA cleaning and with the HF acid of dilution, before utilizing mask sputtering deposit metallic nickel electrode, adopt the oxide skin(coating) of chemical oxidation method at the silicon chip surface silicon growth layer; After the metallic nickel electrodeposition, silicon chip is carried out rapid thermal annealing and selective etching processing then, thereby form the NiSi/Si Schottky diode.
2, the method for preparing the NiSi/Si Schottky diode according to claim 1 is characterized in that described chemical oxidation method is that the Si sheet is put into HCL, H
2O
2And H
2In the mixed liquor of O, boiled 4-10 minute, wherein HCL, H
2O
2And H
2The volume ratio of O is (2～4): (0.8～1.2): (0.8～1.2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037274 CN101038876A (en) | 2007-02-07 | 2007-02-07 | Method for preparing NiSi/Si Schottky diode using interface oxide layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037274 CN101038876A (en) | 2007-02-07 | 2007-02-07 | Method for preparing NiSi/Si Schottky diode using interface oxide layer |
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|---|---|
| CN101038876A true CN101038876A (en) | 2007-09-19 |
Family
ID=38889666
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354716A (en) * | 2011-10-14 | 2012-02-15 | 苏州阿特斯阳光电力科技有限公司 | Method for processing laser-drilled silicon chip |
| CN106935486A (en) * | 2017-05-05 | 2017-07-07 | 天津中环半导体股份有限公司 | A kind of cleaning method for improving schottky barrier layer uniformity |
| CN111834467A (en) * | 2019-04-22 | 2020-10-27 | 复旦大学 | Ni compatible with Si processxSiy/Ga2O3Schottky diode and preparation method thereof |
-
2007
- 2007-02-07 CN CN 200710037274 patent/CN101038876A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354716A (en) * | 2011-10-14 | 2012-02-15 | 苏州阿特斯阳光电力科技有限公司 | Method for processing laser-drilled silicon chip |
| CN106935486A (en) * | 2017-05-05 | 2017-07-07 | 天津中环半导体股份有限公司 | A kind of cleaning method for improving schottky barrier layer uniformity |
| CN111834467A (en) * | 2019-04-22 | 2020-10-27 | 复旦大学 | Ni compatible with Si processxSiy/Ga2O3Schottky diode and preparation method thereof |
| CN111834467B (en) * | 2019-04-22 | 2021-12-03 | 复旦大学 | Ni compatible with Si processxSiy/Ga2O3Schottky diode and preparation method thereof |
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