CN2615867Y

CN2615867Y - Prototype device for schottky diode

Info

Publication number: CN2615867Y
Application number: CN 03229806
Authority: CN
Inventors: 叶志镇; 袁国栋; 黄靖云; 赵炳辉
Original assignee: Zhejiang University ZJU
Current assignee: Zhejiang University ZJU
Priority date: 2003-03-25
Filing date: 2003-03-25
Publication date: 2004-05-12
Anticipated expiration: 2013-03-25

Abstract

The Schottky diode device of the utility model comprises an ohmic contact electrode layer progressively deposited on the underlay in a top-down manner, an n-ZnO film extension layer, a Si3N4 layer and a Schottky metal electrode layer. The Schottky diode manufactured by the utility model has the advantages of obviously increased reverse characteristic compared with traditional structures, small forward voltage drop, small reverse leakage current, big breakdown reverse voltage, and good high temperature stability, applicable to the working environment of high temperature and strong radiation and the fields of frequency mixing, demodulation and high speed optical switch circuit.

Description

A kind of antetype device of Schottky diode

Technical field

The utility model relates to the antetype device of Schottky diode.

Background technology

Schottky diode is to utilize a kind of majority carrier device that contact berrier is carried out work between metal and the semiconductor.Traditional Schottky diode reverse characteristic is relatively poor, and the most frequently used material that is used to make the Schottky diode antetype device is Si, SiC, diamond.The Si material is not suitable at high temperature working, should not be as high-power and radioresistance device.SiC, diamond costs an arm and a leg, growth temperature height (＞1000 ℃).

Summary of the invention

The purpose of this utility model provides a kind of high temperature that is adapted at, the Schottky diode antetype device that uses under the intense radiation conditions.

Schottky diode antetype device of the present utility model is to have Ohm contact electrode layer, n-ZnO film epitaxial loayer, Si on substrate from bottom to top successively ₃N ₄Layer and schottky metal electrode layer.

The utility model is owing to have one deck Si between n-ZnO rete and schottky metal electrode layer ₃N ₄, advantage such as therefore with the Schottky diode of this antetype device making, its reverse characteristic is significantly improved than traditional structure, and also to have forward voltage drop little for this kind diode simultaneously, and reverse leakage current is little, and reverse breakdown voltage is big, and high-temperature stability is good.Be adapted at high temperature, the intense radiation environment is work down, can be widely used in microwave mixer, fields such as detection and high-speed switching circuit.

Description of drawings

Fig. 1 is the utility model Schottky diode antetype device structural representation.

Fig. 2 is the I-V curve of the Schottky diode of the utility model antetype device making.

Embodiment

With reference to Fig. 1, Schottky diode antetype device of the present utility model is to deposit Ohm contact electrode layer 2, n-ZnO film epitaxial loayer 3, Si on substrate 1 from bottom to top successively ₃N ₄Layer 4 and schottky metal electrode layer 5 and constituting.Its substrate can be a silicon, and perhaps sapphire is used silicon usually.The metal ohmic contact electrode layer can be aluminium (Al) or titanium aluminium (Ti/Al) double-level-metal, and the schottky metal electrode layer can be gold (Au) or silver (Ag).The doping content of n-ZnO film epitaxial loayer 3 is generally 1.8 * 10 ¹⁵Cm ^-3-2.0 * 10 ¹⁸Cm ^-3, doping can be intrinsic or mix Al.

The preparation method of this Schottky diode antetype device may further comprise the steps:

1) cleans substrate according to a conventional method;

2) Ohm contact electrode of vacuum plating at room temperature;

3) use deionized water, the magnetron sputtering growth room is put in the acetone ultrasonic cleaning, under 400-550 ℃ of temperature, 2.5-6Pa pressure, and magnetron sputtering growth n-ZnO epitaxial film;

4) carbon tetrachloride ultrasonic cleaning sample, plasma deposition Si ₃N ₄, at Si ₃N ₄Last resist coating, reactive ion etching Si is developed in exposure ₃N ₄, form several rows of contact window;

5) carbon tetrachloride ultrasonic cleaning sample, nitrogen dries up, electron beam evaporation schottky metal electrode, resist coating on the schottky metal electrode, exposure is developed, and wet etching goes out several rows of schottky metal electrode window through ray;

6) sample is annealed, annealing temperature 300-500 ℃, time 1min.

Shown in Figure 2 is to be Ohm contact electrode with Al, and Au is the Au/Si of schottky metal electrode ₃N ₄The I-V curve of the Schottky diode that the Schottky diode antetype device of/ZnO/Al structure is made has tangible rectification characteristic and higher puncture voltage through the I-V test shows, leakage current only be-0.02 μ A (10V).

Claims

1. the antetype device of a Schottky diode is characterized in that having Ohm contact electrode layer (2), n-ZnO film epitaxial loayer (3), Si from bottom to top successively on substrate (1) ₃N ₄Layer (4) and schottky metal electrode layer (5).

2. the antetype device of Schottky diode according to claim 1 is characterized in that said Ohm contact electrode layer (2) is aluminium or titanium aluminium double-level-metal, and schottky metal electrode layer (5) is a gold or silver-colored.

3. the antetype device of Schottky diode according to claim 1, the doping content that it is characterized in that n-ZnO film epitaxial loayer (3) is 1.8 * 10 ¹⁵Cm ^-3-2.0 * 10 ¹⁸Cm ^-3