CN1707294A - 2X3 light wave guide switch - Google Patents
2X3 light wave guide switch Download PDFInfo
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- CN1707294A CN1707294A CN 200510034726 CN200510034726A CN1707294A CN 1707294 A CN1707294 A CN 1707294A CN 200510034726 CN200510034726 CN 200510034726 CN 200510034726 A CN200510034726 A CN 200510034726A CN 1707294 A CN1707294 A CN 1707294A
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- 238000004891 communication Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 2
- 229920005601 base polymer Polymers 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The present invention is one kind of light waveguide switch based on multimode interference principle and with 2x3 structural units. The 2x3 light waveguide switch has 2 monomode input waveguides, 3 monomode output waveguides, and 1 multimode waveguide area set between the input waveguides and the output waveguides and with input connected to the input waveguides and output connected to the output waveguides. The multimode waveguide area is one multimode interference area provided with two refractive index variable regions. The present invention may output light signal from any input port through the three output ports, couple light signals from any two input ports through the middle output port, or couple light signals from any two input ports through the two side output ports. In addition, the 2x3 light waveguide switch may be integrated in one single chip, and may be used widely in whole light communication, and fiber network and system.
Description
1, technical field:
The present invention relates to a kind of in optical communication field, the light shutter device that can carry out Route Selection, cross-connect or coupling to the light signal of different wave length or identical wavelength.The innovative technology that belongs to optical waveguide switch.
2, background technology:
Photoswitch is one of most important components and parts in All-Optical Communication Network particularly Fiber to the home the net.Photoswitch can carry out Route Selection and switching to light signal, can different light signals be transported to different terminal users according to requirements of different users.Existing optical waveguide switch has y-branch 1 * 2 photoswitch, X type 2 * 2 photoswitches, 3 * 2 photoswitches and by Y branch 1 * 2 structure or X type 2 * 2 structures M that cascade forms as elementary cell * N array of photoswitch.Its common feature is all to be confined to two output terminals, is difficult to satisfy user's request for utilization.
3, summary of the invention:
The objective of the invention is to break through the limitation that existing photoswitch has only two output terminals, a kind of optical waveguide switch with the output of three ports is provided.The present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.
Structural representation of the present invention as shown in drawings, include two single mode input waveguides (A), (B), three single mode output waveguides (1), (2), (3) and multimode waveguide district (4), wherein multimode waveguide district (4) are arranged between input waveguide (A), (B) and output waveguide (1), (2), (3), the inlet end in multimode waveguide district (4) and input waveguide (A), (B) join, and the endpiece of multimode waveguide district (4) joins with output waveguide (1), (2), (3) respectively.
Above-mentioned single mode output waveguide (2) is made up of tapered transmission line part (7) and straight wave guide part (8), and wherein an end of tapered transmission line part (7) and the endpiece of multimode waveguide district (4) join, and the other end and straight wave guide part (8) are joined.
Above-mentioned multimode waveguide district (4) is the multiple-mode interfence district, and which is provided with two refraction index changing districts (5), (6).
Independent running can be distinguished in above-mentioned refraction index changing district (5), (6), also can operate simultaneously.
Refraction index changing district (5) in the above-mentioned multimode waveguide district (4), (6) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the zone of its material refractive index by extraneous factors such as thermo-optic effect, acoustooptic effects.
Above-mentioned single mode input waveguide (A), (B) and single mode output waveguide (1), (2), (3) all are ridge waveguides.
The cross section of above-mentioned optical waveguide includes substrate (14), ducting layer (15), overlayer (20), and ducting layer (15), overlayer (20) cover on the substrate (14) successively.
N type or p type doped region (16) that p type or n type doped region (18) and its next door are arranged in the ducting layer (15) at above-mentioned refraction index changing district (5), (6) place, two metal electrodes (19), (17) are located at its top respectively.
Above-mentioned ducting layer (15) can be to the transparent photoelectron material of optical communications wavelength; Above-mentioned substrate (14), overlayer (20) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
Above-mentioned can be IV family materials such as Si, SiGe on the Si base to the transparent photoelectron material of near infrared light, the III-V group iii v compound semiconductor material on GaAs base and the InP base, or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material.
Above-mentioned photoelectron material can be made of conventional material method, also can grow with molecular beam epitaxy or chemical vapor deposition method.
Above-mentioned optical waveguide switch can be made of traditional semiconductor devices micro production technology, also can be with novel optoelectronic device micro production fabrication techniques, and optical waveguide wherein can obtain with dry etching or wet etching technique.
The present invention since adopted have two single mode input waveguides, multimode waveguide and three the single mode output waveguides structure formed of totally three parts, wherein multimode waveguide is positioned at the centre of device, be a multiple-mode interfence district, done two changeable zones of refractive index simultaneously.This photoswitch can be exporting from three output ports respectively from the light signal of any one port input, output port output in the middle of also can being coupled to the light signal of importing simultaneously from two input ports perhaps is adjusted to any two output ports output except that a middle output port.In addition, the present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.The present invention is that a kind of design is ingenious, 2 * 3 convenient and practical optical waveguide switches.
4, description of drawings:
Fig. 1 (a) is the stereographic map of photoswitch of the present invention;
Fig. 1 (b) is the vertical view of photoswitch of the present invention;
Fig. 2 (a) is the cross sectional representation of the middle refraction index changing district (5) of Fig. 1 (b) along the C-D direction;
Fig. 2 (b) is the cross sectional representation of the middle refraction index changing district (6) of Fig. 1 (b) along the E-F direction;
Fig. 3 (a) (b) (c) (d) (e) (f) (g) (h) (i) be several operational function analog result exemplary plot of the present invention.
5, embodiment:
Embodiment:
Structural representation of the present invention is shown in Fig. 1 (a), Fig. 1 (b), Fig. 2 (a), Fig. 2 (b), include two single mode input waveguide A, B, three single mode output waveguides 1,2,3 and multimode waveguide district 4, wherein multimode waveguide district 4 is arranged between input waveguide A, B and the output waveguide 1,2,3, the inlet end in multimode waveguide district 4 and input waveguide A, B join, and the endpiece in multimode waveguide district 4 joins with output waveguide 1,2,3 respectively.
Above-mentioned single mode output waveguide 2 is made up of tapered transmission line part 7 and straight wave guide part 8, and wherein the endpiece in an end of tapered transmission line part 7 and multimode waveguide district 4 joins, and the other end and straight wave guide part 8 are joined.
Above-mentioned multimode waveguide district 4 is the multiple-mode interfence district, and which is provided with two refraction index changing districts 5,6.
Independent running can be distinguished by above-mentioned refraction index changing district 5,6, also can operate simultaneously.In the present embodiment, 9 is two spacings between input waveguide A, the B shown in Fig. 1 b, and 10 and 11 is respectively the nearest spacing between output waveguide 2,3 and 1,2, and 12 and 13 is respectively the spacing between the straight wave guide section between output waveguide 1,2 and 2,3.In the present embodiment, the width of two single mode input waveguide A, B and three single mode input waveguides 1,2,3 is 6 μ m.The length of two single mode input waveguide A, B is 1000 μ m, and spacing 9 is 18 μ m.The length of the tapered transmission line part 7 of single mode output waveguide (2) is 2000 μ m, and top and terminal width are respectively 12 μ m and 6 μ m, and the length of the straight wave guide part (8) of single mode output waveguide (2) is 1500 μ m.The length of output waveguide 1,3 all is 3500 μ m.Nearest spacing 11,10 between the output waveguide 1,2 and 2,3 is 3 μ m, and the spacing 12,13 between the straight wave guide section between the output waveguide 1,2 and 2,3 is 6 μ m.Multiple-mode interfence district 4 is a multimode waveguide, width 30 μ m, length 9500 μ m.Two refraction index changing districts 5,6 lay respectively at 1/2 and 3/4 place in multiple-mode interfence district 4 on optical propagation direction, lay respectively at the left side and the right side in multiple-mode interfence district on the vertical light direction of propagation, and as shown in Figure 1, length and width are respectively 260 μ m and 15 μ m.The thickness of all waveguides is 2.6 μ m, and etching depth is 1.0 μ m.The total length of device is 1.4cm.
Above-mentioned single mode input waveguide A, B and single mode output waveguide 1,2,3 all are ridge waveguides.
Refraction index changing district 5,6 in the above-mentioned multimode waveguide district 4 can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the zone of its material refractive index by extraneous factors such as thermo-optic effect, acoustooptic effects.In the present embodiment, the refraction index changing district in multimode waveguide district 4 is by adding the charge carrier injection region of forward bias control by the pn knot.
The cross section of above-mentioned optical waveguide includes substrate 14, ducting layer 15, overlayer 20, and ducting layer 15, overlayer 20 cover on the substrate 14 successively.
Above-mentioned ducting layer 15 can be to the transparent photoelectron material of near infrared light.Above-mentioned substrate 14, overlayer 20 can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.In the present embodiment, ducting layer 15 is SiGe materials, and substrate 14 is that Si material, overlayer 20 are SiO
2Material.
There are p type doped region 16 and 18, two metal electrodes of n type doped region 17,19 to be located at the top of p type doped region 16 and n type doped region 18 respectively in the ducting layer 15 in above-mentioned refraction index changing district 5,6.
The embodiment of the invention is when design, and substrate 14 is a p type Si material, doping content 2 * 10
16Cm
-3, ducting layer 15 is a p type SiGe material, doping content 2 * 10
16Cm
-3The doping content of p type doped region 16 and n type doped region 18 is 1 * 10
18Cm
-3
Fig. 3 is the exemplary plot of the present invention's analog result in use, and the used wavelength of board design is λ=1550nm, and the result is as follows:
(1) if light signal only from input port A input, 5,6 when not applying bias voltage in the refraction index changing district, light signal will be from output port 3 outputs; When only applying bias voltage in refraction index changing district 5, light signal will be adjusted to output port 1 output, 5,6 when applying bias voltage simultaneously in the refraction index changing district, and light signal will be adjusted to output port 2 outputs, respectively shown in Fig. 3 (a), Fig. 3 (b) and Fig. 3 (c).
(2) if light signal only from the input port B input, 5,6 when not applying bias voltage in the refraction index changing district, light signal will be from output port 1 output; When refraction index changing district 5 applies bias voltage, light signal will be adjusted to output port 3 output, and 5,6 when applying bias voltage simultaneously in the refraction index changing district, and light signal will be adjusted to output port 2 outputs, respectively shown in Fig. 3 (d), Fig. 3 (e) and Fig. 3 (f).
(3) if light signal import simultaneously from input port A, B, 5,6 when not applying bias voltage in the refraction index changing district, will be from the light signal of input port A, B input respectively from output port 3,1 output, when refraction index changing district 5 applies bias voltage, will be from the light signal of input port A, B input respectively from output port 1,3 outputs, 5,6 when applying bias voltage simultaneously in the refraction index changing district, will be coupling in together and export from the light signal of input port A, B input, respectively shown in Fig. 3 (g), Fig. 3 (h) and Fig. 3 (i) from output port 2.
In embodiments of the present invention, refraction index changing district 5,6 forward biases that applied are 1V.The average extinction ratio of 2 * 3 optical waveguide switches is 27dB, inserts the about 2.0dB of loss.
Claims (10)
1, a kind of 2 * 3 optical waveguide switches based on multimode interference principle, it is characterized in that including two single mode input waveguides (A), (B), three single mode output waveguides (1), (2), (3) and multimode waveguide district (4), wherein multimode waveguide district (4) are arranged between input waveguide (A), (B) and output waveguide (1), (2), (3), the inlet end in multimode waveguide district (4) and input waveguide (A), (B) join, and the endpiece of multimode waveguide district (4) joins with output waveguide (1), (2), (3) respectively.
2,2 * 3 optical waveguide switches according to claim 1, it is characterized in that above-mentioned single mode output waveguide (2) by tapered transmission line part (7) and straight wave guide partly (8) form, wherein an end of tapered transmission line part (7) and the endpiece of multimode waveguide district (4) join, and the other end and straight wave guide part (8) are joined.
3,2 * 3 optical waveguide switches according to claim 1 is characterized in that above-mentioned multimode waveguide district (4) is the multiple-mode interfence district, and which is provided with two refraction index changing districts (5), (6).
4,2 * 3 optical waveguide switches according to claim 3 is characterized in that above-mentioned refraction index changing district (5), (6) can distinguish independent running, also can operate simultaneously.
5,2 * 3 optical waveguide switches according to claim 4 is characterized in that refraction index changing district (5), (6) in the above-mentioned multimode waveguide district (4) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the zone of its material refractive index by extraneous factors such as thermo-optic effect, acoustooptic effects.
6,, it is characterized in that above-mentioned single mode input waveguide (A), (B) and single mode output waveguide (1), (2), (3) all are ridge waveguides according to each described 2 * 3 optical waveguide switches of claim 1 to 5.
7,2 * 3 optical waveguide switches according to claim 6 is characterized in that the cross section of above-mentioned optical waveguide includes substrate (14), ducting layer (15), overlayer (20), and ducting layer (15), overlayer (20) cover on the substrate (14) successively.
8,2 * 3 optical waveguide switches according to claim 7, it is characterized in that having in the ducting layer (15) at above-mentioned refraction index changing district (5), (6) place the n type or the p type doped region (16) on p type or n type doped region (18) and its next door, two metal electrodes (19), (17) are located at its top respectively.
9,2 * 3 optical waveguide switches according to claim 7 is characterized in that above-mentioned ducting layer (15) can be to the transparent photoelectron material of optical communications wavelength; Above-mentioned substrate (14), overlayer (20) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
10,2 * 3 optical waveguide switches according to claim 9, it is characterized in that above-mentioned can be IV family materials such as Si, SiGe on the Si base to the transparent photoelectron material of near infrared light, III-V group iii v compound semiconductor material on GaAs base and the InP base, or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510034726 CN1707294A (en) | 2005-05-23 | 2005-05-23 | 2X3 light wave guide switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510034726 CN1707294A (en) | 2005-05-23 | 2005-05-23 | 2X3 light wave guide switch |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102778729A (en) * | 2012-07-31 | 2012-11-14 | 清华大学 | High beam quality signal light fiber beam combiner and manufacture method thereof |
| CN109581586A (en) * | 2019-01-10 | 2019-04-05 | 上海理工大学 | A kind of sub- chip of compact type silicon nitride wavelength division multiplexed light |
| CN113176693A (en) * | 2021-04-30 | 2021-07-27 | 南京刻得不错光电科技有限公司 | Multi-mode interference element and Mach-Zehnder modulator |
-
2005
- 2005-05-23 CN CN 200510034726 patent/CN1707294A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102778729A (en) * | 2012-07-31 | 2012-11-14 | 清华大学 | High beam quality signal light fiber beam combiner and manufacture method thereof |
| CN102778729B (en) * | 2012-07-31 | 2014-10-22 | 清华大学 | High beam quality signal light fiber beam combiner and manufacture method thereof |
| CN109581586A (en) * | 2019-01-10 | 2019-04-05 | 上海理工大学 | A kind of sub- chip of compact type silicon nitride wavelength division multiplexed light |
| CN113176693A (en) * | 2021-04-30 | 2021-07-27 | 南京刻得不错光电科技有限公司 | Multi-mode interference element and Mach-Zehnder modulator |
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