CN1556423A - 3 X 2 light guide switch - Google Patents
3 X 2 light guide switch Download PDFInfo
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- CN1556423A CN1556423A CNA2003101176262A CN200310117626A CN1556423A CN 1556423 A CN1556423 A CN 1556423A CN A2003101176262 A CNA2003101176262 A CN A2003101176262A CN 200310117626 A CN200310117626 A CN 200310117626A CN 1556423 A CN1556423 A CN 1556423A
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- 230000003287 optical effect Effects 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 39
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 239000002800 charge carrier Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910003811 SiGeC Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 6
- 238000000926 separation method Methods 0.000 abstract description 5
- 238000004132 cross linking Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The optical waveguide switch includes three input waveguides and two output waveguides. Refractive index change area is made at cross section between the said three input waveguides and two output waveguides. The said refractive index change area can control two reflecting surfaces in cross section by using means of electricity, heat or light. The two refractive index change areas realize functions of power separation, wave division multiplex, light cross linking, light add and drop multiplexer, and multiple wavelength optical switch for optical signal. The invention possible to be integrated on single chip and integrated intelligently through micro manufacturing technique is applicable to full optical communication network and wave division multiplex system.
Description
1, technical field:
The present invention relates to a kind ofly can be used in All-Optical Communication Network and the wavelength-division multiplex system, can control separately and operate or the optical waveguide switch device of running simultaneously multiple optical wavelength.The innovative technology that belongs to optical waveguide switch.
2, background technology:
The intelligent monolithic integrated optical wave guide device that can carry out effects such as power separation, wavelength-division multiplex, cross-connect, switch to multiple optical communications wavelength signal simultaneously is a required key components in all optical communication transmission system and the multi-wavelength system always.These used optical devices all are the discrete devices with one of above-mentioned functions at present, and any used optical device at present can't have functions such as power separation, wavelength-division multiplex, cross-connect even switch simultaneously.Existing optical waveguide switch have the y-branch structure 1 * 2 photoswitch, X type structure 2 * 2 photoswitches and by Y branch 1 * 2 structure or X type 2 * 2 structures M that cascade forms as elementary cell * N array of photoswitch.Y branch 1 * 2 photoswitch has only an input waveguide, two output waveguides, and this structure can only be carried out the control realization digital switch function that power separates or pass through two output waveguide arms to a kind of optical wavelength signal of being imported.Its shortcoming is irrelevant with optical wavelength, thus can not the signal of different wave length be separated, cross-connect etc.Though X type 2 * 2 photoswitches have two input waveguides, two output waveguides, but this structure can only be carried out switch to the wavelength signals of being imported, but can not realize that power separates, and can not carry out cross-connect, wavelength-division multiplex etc. to wavelength optical signals equally to light signal.
3, summary of the invention:
The objective of the invention is to overcome above-mentioned shortcoming and a kind of 3 * 2 optical waveguide switches that have multiple functions such as power separation, wavelength-division multiplex, optical cross connection, Optical Add Drop Multiplexer, multi-wavelength switch simultaneously are provided.The present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated and intelligent integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.
Structural representation of the present invention includes in the cross section of three input waveguides (2,3,4), two output waveguides (5,6), three input waveguides and two output waveguides and has made refraction index changing district (17,18) as shown in drawings.
Two reflectings surface (15,16) in three input waveguides of above-mentioned refraction index changing district (17,18) may command and two the output waveguide cross sections.
Above-mentioned refraction index changing district (17,18) can be by logical live, heat, light to realize the change to its refractive index.
Sweep (7,8) has been made in the centre of above-mentioned input waveguide (2,4).
Independent running can be distinguished by above-mentioned refraction index changing district (17,18), also can operate simultaneously.
Above-mentioned refraction index changing district (17,18) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the refractive index of its material by thermo-optic effect, acoustooptic effect extraneous factor.
Above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be single mode waveguides, also can be multimode waveguides.
Above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be ridge waveguides, also can be channel waveguides.
Above-mentioned channel waveguide can be to bury waveguide, implant waveguide or load waveguide.
The cross section of above-mentioned optical waveguide switch includes substrate (1), under-clad layer (19), ducting layer (20), top covering (21), and under-clad layer (19), ducting layer (20), top covering (21) cover on the substrate (1) successively.
Above-mentioned ducting layer (20) is to the transparent photoelectron material of near infrared light; Above-mentioned substrate (1), under-clad layer (19), top covering (21) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
Above-mentioned photoelectron material can be Si, SiGe, SiGeC, Si-on-insulator (SOI), SiGe-on-insulator (SGOI) material on the Si base; It also can be the III-V group iii v compound semiconductor material on InP base or the GaAs base; Or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material.
Above-mentioned photoelectron material can be made of conventional material method, also can grow with molecular beam epitaxy or chemical vapor deposition method.
Above-mentioned optical waveguide switch can be made of traditional semiconductor devices micro production technology, also can be with novel optoelectronic device micro production fabrication techniques, and optical waveguide wherein can obtain with dry etching or wet etching technique.
The present invention has been owing to adopted the structure that has three input waveguides, makes two refraction index changing districts in the cross section of two output waveguides and three input waveguides and two output waveguides, can realize multiple functions such as power separation, wavelength-division multiplex, optical cross connection, Optical Add Drop Multiplexer, multi-wavelength light switch to light signal by these two refraction index changing districts.In addition, the present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated and intelligent integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.The present invention is that a kind of design is ingenious, 3 * 2 convenient and practical optical waveguide switches.
4, description of drawings:
Describe concrete structure of the present invention in detail below in conjunction with accompanying drawing:
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the structure enlarged drawing of three input waveguides of the present invention and two output waveguide cross sections;
Fig. 3 is a cross-sectional structure synoptic diagram of the present invention;
Fig. 4 is several operational function analog result exemplary plot of the present invention.
5, embodiment:
Embodiment:
Structural representation of the present invention includes in the cross section of three input waveguides (2,3,4), two output waveguides (5,6), three input waveguides and two output waveguides and has made refraction index changing district (17,18) as shown in Figure 1, 2.In the present embodiment, the distance between three input waveguides is 25 μ m, and input waveguide angle of the crossing θ is 1.5 °.Spacing between two output waveguides is 30 μ m, and the output waveguide angle of the crossing is 2 θ=3 °, total length 3mm of the present invention.Waveguide 10 → 14 and 12 → 13 in the cross section of three input waveguides shown in Figure 2 and two output waveguides is respectively two straight shape waveguides, and they intersect to form 2 * 2 structures.11 is the vertical bar shaped waveguide, it has constituted 3 * 2 structures with other two straight shape waveguides, 15 and 16 are respectively two reflectings surface in three input waveguides and two the output waveguide cross sections, are called " minute surface ", and minute surface 15 and 16 is respectively by refraction index changing district 17 and 18 controls.
Above-mentioned refraction index changing district (17,18) can be by logical live, heat, light to realize the change to its refractive index.Be that refraction index changing district (17,18) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the refractive index of its material by thermo-optic effect, acoustooptic effect extraneous factor.In the present embodiment, refraction index changing district (17,18) are by adding the charge carrier injection region of forward bias control by the pn knot.
Curved waveguide part (7,8) has been made in the centre of above-mentioned input waveguide (2,4).In the present embodiment, the bending radius of curved waveguide part (7,8) is 30mm.
Independent running can be distinguished by above-mentioned refraction index changing district (17,18), also can operate simultaneously.
Above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be single mode waveguides, also can be multimode waveguides.In the present embodiment, input waveguide (2,3,4) and output waveguide (5,6) are single mode waveguides.
Above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be ridge waveguides, also can be channel waveguides.In the present embodiment, input waveguide (2,3,4) and output waveguide (5,6) are the ridged single mode waveguides.
Above-mentioned channel waveguide can be to bury waveguide, implant waveguide or load waveguide.
The cross section of above-mentioned optical waveguide switch includes substrate (1), under-clad layer (19), ducting layer (20), top covering (21), and under-clad layer (19), ducting layer (20), top covering (21) cover on the substrate (1) successively.
Above-mentioned substrate (1), under-clad layer (19), ducting layer (20), top covering (21) can be to the transparent photoelectron material of near infrared light.Above-mentioned photoelectron material can be Si, SiGe, SiGeC, Si-on-insulator (SOI), SiGe-on-insulator (SGOI) material on the Si base; It also can be the III-V group iii v compound semiconductor material on InP base or the GaAs base; Or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material.
Above-mentioned photoelectron material can be made of conventional material method, also can grow with molecular beam epitaxy or chemical vapor deposition method.
Above-mentioned optical waveguide switch can be made of traditional semiconductor devices micro production technology, also can be with novel optoelectronic device micro production fabrication techniques, and optical waveguide wherein can obtain with dry etching or wet etching technique.
The embodiment of the invention is utilized the material of silicon (Si) as substrate 1 when making, with the material of SiGe (SiGe) alloy material as light waveguide-layer 20.
Used Si substrate 1 is a p+ section bar material in the material growth, and doping content is 2 * 10
18Cm
-3Utilize the ultrahigh vacuum vapor deposition method to grow the p type Si under-clad layer 19 of thickness for 5nm on substrate 1, doping content is 2 * 10
16Cm
-3, simultaneously growth thickness is SiGe (component of Ge is 4%) the alloy ducting layer 20 of 2.5 μ m, grow then heavy doping n+ type Si floor that thickness is about 5nm as upper caldding layer, be used to make two refraction index changing districts 17 and 18, its doping content is 1 * 10
18Cm
-3
In the making, utilize dry etching technology to obtain charge carrier injection region 17 and 18 by the method for removing unnecessary heavy doping n+ floor, only staying the n+ floor on refraction index changing district 17 and 18.SiGe light waveguide-layer 20 also obtains with dry etching.The width of the SiGe ducting layer 20 in the embodiment of the invention is 10 μ m, about the about 1.1 μ m of the etching depth of all ridged single mode waveguides.The ridged single mode waveguide covers silicon dioxide thereon as top covering 21 after forming.Produce 3 * 2 optical waveguide switches of the present invention through traditional silicon semiconductor technology (comprising the evaporation, etching of annealing, the metal electrode etc.) method of making.
Key component refraction index changing district (17,18) among the present invention is two charge carrier injection regions, two pn+ knots that it is made up of p type SiGe ducting layer and the n+ type Si layer on it.After adding forward bias respectively on 17 and 18, owing to cause that the refractive index of SiGe material changes after charge carrier is injected into SiGe ducting layer 20, thereby two mirror surfaces 15 and 16 occur, can control the light signal of input by these two mirror surfaces.
The present invention can have multiple function in use, Figure 4 shows that the exemplary plot of its several operational function analog results, and three kinds of used wavelength of functional simulation experiment test are respectively λ 1=1540nm, λ 2=1550nm, λ 3=1560nm.The result is as follows:
(1) do not add forward bias if only with λ 1 coupled into waveguide 3, and in two echo areas 17 and 18, then do not have minute surface 15 and 16 to occur, λ 1 will be divided into two this moment, respectively from waveguide 5 and 6 outputs, shown in Fig. 4 (a).If add a forward bias on any one echo area 17 or 18, then minute surface 15 or 16 will occur, biasing on 17 for example, and minute surface 15 occurs, and λ 1 will be reflected onto waveguide 6 outputs this moment, shown in Fig. 4 (b).In this case, 3 * 2 optical waveguide switches of the present invention play the effect of power splitter and 1 * 2 digital optical switch.
(2) if with λ 2 coupled into waveguide 2, or with λ 3 coupled into waveguide 4, for example with λ 3 coupled into waveguide 4 and when the no-bias, will be from the light of waveguide 4 inputs from waveguide 5 outputs, shown in Fig. 4 (c); Behind 17 biasings of echo area, light will reflex to waveguide 6 outputs, shown in Fig. 4 (d).In this case, the present invention is a kind of 2 * 2 photoswitches.
(3) if with λ 2 and λ 3 coupled into waveguide 2 and waveguide 4 respectively, light will be respectively from waveguide 6 and 5 outputs, and this moment is for light intersection situation, shown in Fig. 4 (e).The light of two kinds of wavelength will be reflected onto waveguide 5 or 6 outputs when bias voltage is arranged.
(4) if λ 1 and λ 3 or λ 1 and λ 2 are coupled into separately input waveguide respectively, wavelength X 1 will be divided into two during no-bias, and λ 2 or λ 3 will intersect output.Having under the situation of bias voltage, the light of two kinds of wavelength will lump together and be reflected onto waveguide 5 or 6, respectively shown in Fig. 4 (f) and 4 (g).In this case, the present invention is a kind of ripple multiplexer (also being wave multiplexer), is a kind of 2 * 2 photoswitches of dual wavelength simultaneously.
(5) if simultaneously three kinds of wavelength light signal λ 1, λ 2, λ 3 are input to input waveguide 3,2 and 4 respectively, when no-bias, partial wave and close ripple after the output situation shown in Fig. 4 (h).Having under the situation of bias voltage, three kinds of wavelength light signals will lump together along waveguide 5 or 6 outputs.Shown in Fig. 4 (i).The present invention's this moment is a kind of multi-wavelength ripple multiplexer (and wave multiplexer), is a kind of multi-wavelength light switch simultaneously.
In addition after tested as can be known, the operating voltage of this 3 * 2 SiGe optical waveguide switches of the embodiment of the invention is 1.3～1.4V, and switching current is about 120mA, and switching time is in the scope of 100 to 200 nanoseconds.
Claims (14)
1, a kind of 3 * 2 optical waveguide switches is characterized in that including in the cross section of three input waveguides (2,3,4), two output waveguides (5,6), three input waveguides and two output waveguides and have made refraction index changing district (17,18).
2,3 * 2 optical waveguide switches according to claim 1 is characterized in that two reflectings surface (15,16) in three input waveguides of above-mentioned refraction index changing district (17,18) may command and two the output waveguide cross sections.
3,3 * 2 optical waveguide switches according to claim 1 is characterized in that above-mentioned refraction index changing district (17,18) can be by logical live, heat, light to realize the change to its refractive index.
4,3 * 2 optical waveguide switches according to claim 1 is characterized in that sweep (7,8) has been made in the centre of above-mentioned input waveguide (2,4).
5,3 * 2 optical waveguide switches according to claim 1 is characterized in that above-mentioned refraction index changing district (17,18) can distinguish independent running, also can operate simultaneously.
6,, it is characterized in that above-mentioned refraction index changing district (17,18) can be by adding the charge carrier injection region of forward bias control by the pn knot according to claim 1 or 2 or 3 or 4 or 5 described 3 * 2 optical waveguide switches; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the refractive index of its material by thermo-optic effect, acoustooptic effect extraneous factor.
7,3 * 2 optical waveguide switches according to claim 6 is characterized in that above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be single mode waveguides, also can be multimode waveguides.
8,3 * 2 optical waveguide switches according to claim 7 is characterized in that above-mentioned input waveguide (2,3,4) and output waveguide (5,6) can be ridge waveguides, also can be channel waveguides.
9,3 * 2 optical waveguide switches according to claim 8 is characterized in that above-mentioned channel waveguide can be to bury waveguide, implant waveguide or load waveguide.
10,3 * 2 optical waveguide switches according to claim 6, the cross section that it is characterized in that above-mentioned optical waveguide switch includes substrate (1), under-clad layer (19), ducting layer (20), top covering (21), and under-clad layer (19), ducting layer (20), top covering (21) cover on the substrate (1) successively.
11,3 * 2 optical waveguide switches according to claim 6 is characterized in that above-mentioned ducting layer (20) is to the transparent photoelectron material of near infrared light; Above-mentioned substrate (1), under-clad layer (19), top covering (21) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
12,3 * 2 optical waveguide switches according to claim 6 is characterized in that above-mentioned photoelectron material can be Si, SiGe, SiGeC, Si-on-insulator (SOI), SiGe-on-insulator (SGOI) material on the Si base; It also can be the III-V group iii v compound semiconductor material on InP base or the GaAs base; Or organic polymer material, macromolecular material, glass-based material and LiNbO3 material.
13,3 * 2 optical waveguide switches according to claim 6 is characterized in that above-mentioned photoelectron material can make of conventional material method, also can be with molecular beam epitaxy or chemical vapor deposition method growth.
14,3 * 2 optical waveguide switches according to claim 6, it is characterized in that above-mentioned optical waveguide switch can make of traditional semiconductor devices micro production technology, also can be with novel optoelectronic device micro production fabrication techniques, ridge optical waveguide wherein can obtain with dry etching or wet etching technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101176262A CN1556423A (en) | 2003-12-30 | 2003-12-30 | 3 X 2 light guide switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101176262A CN1556423A (en) | 2003-12-30 | 2003-12-30 | 3 X 2 light guide switch |
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| CN1556423A true CN1556423A (en) | 2004-12-22 |
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|---|---|---|---|
| CNA2003101176262A Pending CN1556423A (en) | 2003-12-30 | 2003-12-30 | 3 X 2 light guide switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590941A (en) * | 2012-04-05 | 2012-07-18 | 上海光芯集成光学股份有限公司 | Integrated optical chip based on glass-based ion exchange buried optical waveguide and manufacturing method |
| CN108169849A (en) * | 2017-12-19 | 2018-06-15 | 武汉邮电科学研究院 | Multichannel star light intersects |
-
2003
- 2003-12-30 CN CNA2003101176262A patent/CN1556423A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590941A (en) * | 2012-04-05 | 2012-07-18 | 上海光芯集成光学股份有限公司 | Integrated optical chip based on glass-based ion exchange buried optical waveguide and manufacturing method |
| CN108169849A (en) * | 2017-12-19 | 2018-06-15 | 武汉邮电科学研究院 | Multichannel star light intersects |
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