CN1737626A - 2x4 optical wave-guide switch - Google Patents
2x4 optical wave-guide switch Download PDFInfo
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- CN1737626A CN1737626A CN 200510036413 CN200510036413A CN1737626A CN 1737626 A CN1737626 A CN 1737626A CN 200510036413 CN200510036413 CN 200510036413 CN 200510036413 A CN200510036413 A CN 200510036413A CN 1737626 A CN1737626 A CN 1737626A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 2
- 229920005601 base polymer Polymers 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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Abstract
This invention relates to one optical wave guide switch based on multi-mode intervene principle and 2 by 4 structure unit, which comprises two single mode input wave guide, four single mode output wave guide and multi-mode wave guide areas and the multi-mode wave guide area is located between the input wave guide and output wave guide; the multi-mode wave guide area entrance and input wave guide are connected and the output end and output wave guide of the multi-wave guide area are connected; the multi-mode wave guide area is one multi-mode intervene area with two refraction rate modulation areas.
Description
1, technical field:
The present invention relates to a kind ofly in optical communication field, utilize two index modulation districts to realize light shutter device four ports output, that the light signal of different wave length or identical wavelength carried out Route Selection, cross-connect.The innovative technology that belongs to optical waveguide switch.
2, background technology:
Photoswitch is one of most important components and parts in All-Optical Communication Network particularly Fiber to the home the net.Photoswitch can carry out Route Selection and switching to light signal, can different light signals be transported to different terminal users according to requirements of different users.Existing optical waveguide switch has more than one index modulation district mostly, but the assembled state that often can not make full use of its modulator zone refractive index is come conditioning signal output, for the photoswitch that two modulator zones are arranged, one, two or three output ports can only be accomplished, the output of four ports can not be realized.Its common feature is that the assembled state that can not make full use of its modulator zone refractive index is regulated light signal output, is difficult to satisfy the requirement of complicated day by day optical communication net and user's request for utilization.
3, summary of the invention:
The objective of the invention is to break through the limitation that assembled state that existing photoswitch can not make full use of its modulator zone refractive index is regulated light signal, provide two modulator zones of a kind of need can realize the optical waveguide switch of four ports output.The present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.
Structural representation of the present invention as shown in drawings, include two single mode input waveguides (A), (B), four single mode output waveguides (1), (2), (3), (4) and multimode waveguide district (5), wherein multimode waveguide district (5) are arranged between input waveguide (A), (B) and output waveguide (1), (2), (3), (4), the inlet end in multimode waveguide district (5) and input waveguide (A), (B) join, and the endpiece of multimode waveguide district (5) and output waveguide (1), (2), (3), (4) join.
Above-mentioned single mode output waveguide (1) and (4) have been done sweep (12) and (13) respectively.
Above-mentioned multimode waveguide district (5) is the multiple-mode interfence district, and which is provided with two and can distinguish independent running, index modulation district (6), (7) that also can operate simultaneously, and a rectangle air groove (8).
Above-mentioned two index modulation districts (6), (7) and rectangle air groove (8) lay respectively at top, 1/2 end and the end of multiple-mode interfence district (5) on optical propagation direction, lay respectively at middle a, left side or the right side and the centre in multiple-mode interfence district (5) on the vertical light direction of propagation.
Index modulation district (6) in the above-mentioned multimode waveguide district (5), (7) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the zone of its material refractive index by extraneous factors such as thermo-optic effect, acoustooptic effects.
Above-mentioned single mode input waveguide (A), (B), multimode waveguide (5) and single mode output waveguide (1), (2), (3), (4) all are ridge waveguides.
The cross section of above-mentioned optical waveguide includes substrate (9), under-clad layer (10), ducting layer (11), overlayer (23), and under-clad layer (10), ducting layer (11), overlayer (23) cover on the substrate (9) successively.
P type or n type doped region (25) are arranged in the ducting layer (11) at place, above-mentioned index modulation district (6), and corresponding metal electrode (24) is located at its top, and another metal electrode (26) is located at corresponding substrate (9) below.
N type or p type doped region (27) that p type or n type doped region (29) and its next door are arranged in the ducting layer (11) at place, above-mentioned index modulation district (7), two metal electrodes (30), (28) are located at its top respectively.
Above-mentioned ducting layer (11) can be to the transparent photoelectron material of optical communications wavelength; Above-mentioned substrate (9), under-clad layer (10), overlayer (23) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
Above-mentioned can be IV family materials such as Si, SiGe on the Si base to the transparent photoelectron material of near infrared light, the III-V group iii v compound semiconductor material on GaAs base and the InP base, or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material.
Above-mentioned photoelectron material can be made of conventional material method, also can grow with molecular beam epitaxy or chemical vapor deposition method.
Above-mentioned optical waveguide switch can be made of traditional semiconductor devices micro production technology, also can be with novel optoelectronic device micro production fabrication techniques, and optical waveguide wherein can obtain with dry etching or wet etching technique.
The present invention since adopted have two single mode input waveguides, multimode waveguide and four the single mode output waveguides structure formed of totally three parts, wherein multimode waveguide is positioned at the centre of device, be a multiple-mode interfence district, done two changeable zones of refractive index (6), (7) and a rectangle air groove (8) simultaneously.This photoswitch can make full use of two index modulation districts (totally four kinds combination of refractive indices state) and regulate light signal output, two modulator zones can also can be adjusted to two different output port outputs to the light signal of importing simultaneously from two input ports the light signal of any one port input respectively from four output port outputs.In addition, the present invention can utilize on a chip with a kind of micro production technology and realize that monolithic is integrated, and it can be widely used in All-Optical Communication Network and the wavelength-division multiplex system.The present invention is that a kind of design is ingenious, 2 * 4 convenient and practical optical waveguide switches.
4, description of drawings:
Fig. 1 (a) is the stereographic map of photoswitch of the present invention;
Fig. 1 (b) is the vertical view of photoswitch of the present invention;
Fig. 2 (a) is the cross sectional representation of the middle index modulation district (6) of Fig. 1 (b) along the C-D direction;
Fig. 2 (b) is the cross sectional representation of the middle index modulation district (7) of Fig. 1 (b) along the E-F direction;
Fig. 3 (a) (b) (c) (d) (e) (f) (g) (h) (i) (j) (k) be several operational function analog result exemplary plot of the present invention (l).
5, embodiment:
Embodiment:
Structural representation of the present invention as shown in Figure 1, 2, include two single mode input waveguide A, B, four single mode output waveguides 1,2,3,4 and multimode waveguide district 5, wherein multimode waveguide district 5 is arranged between input waveguide A, B and the output waveguide 1,2,3,4, the inlet end in multimode waveguide district 5 and input waveguide A, B join, and the endpiece in multimode waveguide district 5 and output waveguide 1,2,3,4 are joined.
Above-mentioned single mode output waveguide 1 and 4 has been done sweep 12 and 13 respectively.
Above-mentioned multimode waveguide district 5 is the multiple-mode interfence district, and which is provided with two and can distinguish independent running, the index modulation district 6,7 that also can operate simultaneously, and index modulation district 6,7 forms four kinds of combination of refractive indices states altogether.In addition, also be provided with a rectangle air groove 8 in the multimode waveguide district 5.
In the present embodiment, 15 is two spacings between input waveguide A, the B shown in Fig. 1 (b), and 18 and 19 is respectively the nearest spacing between output waveguide 1,2 and 3,4, and 20,21 and 22 is respectively the spacing between output waveguide 1,2,2,3 and 3,4.In the present embodiment, the width of two single mode input waveguide A, B and four single mode input waveguides 1,2,3,4 is 6 μ m.The length 14 of two single mode input waveguide A, B is 1000 μ m, and spacing 15 is 24 μ m.Output waveguide 1 and 4 sweep 12 and 13 horizontal length 16 are 850 μ m, bending radius 2.58cm, and the length of 1 and 4 straight wave guide 17 is 1000 μ m.The length of output waveguide 2,3 is 1850 μ m. Nearest spacing 18,19 between the output waveguide 1,2 and 3,4 is 3 μ m, and the spacing 20,22 between the straight wave guide section between the output waveguide 1,2 and 3,4 is 10 μ m, and the spacing 21 between the output waveguide 2,3 is 6 μ m.Multiple-mode interfence district 5 is a multimode waveguide, width 36 μ m, length 14150 μ m.Above-mentioned two index modulation districts 6,7 and rectangle air groove 8 lay respectively at top, 1/2 end and the end in multiple-mode interfence district 5 on optical propagation direction, lay respectively at middle a, left side or the right side and the centre in multiple-mode interfence district 5 on the vertical light direction of propagation.As shown in Figure 1, the length in index modulation district 6 and width are respectively 700 μ m and 24 μ m, and the length in index modulation district 7 and width are respectively 258 μ m and 18 μ m, and the length of rectangle air groove 8 and width are respectively 500 μ m and 6 μ m.The thickness of all waveguides is 2.6 μ m, and etching depth is 1.0 μ m.The total length of device is 1.7cm.
Above-mentioned single mode input waveguide A, B, multimode waveguide 5 and single mode output waveguide 1,2,3,4 all are ridge waveguides.
The cross section of above-mentioned optical waveguide includes substrate 9, under-clad layer 10, ducting layer 11, overlayer 23, and under-clad layer 10, ducting layer 11, overlayer 23 cover on the substrate 9 successively.
Above-mentioned ducting layer 11 can be to the transparent photoelectron material of near infrared light.Above-mentioned substrate 9, under-clad layer 10, overlayer 23 can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.In the present embodiment, ducting layer 11 is SiGe materials, and substrate 9 is that Si material, under-clad layer 10 are doped p type Si materials, and overlayer 23 is SiO
2Material.
There are 25, two metal electrodes of n type doped region 24,26 to be located at the top of n type doped region 25 and the below of substrate 9 respectively in the ducting layer 11 in above-mentioned index modulation district 6.
There are p type doped region 27 and 29, two metal electrodes of n type doped region 28,30 to be located at the top of p type doped region 27 and n type doped region 29 respectively in the ducting layer 11 in above-mentioned index modulation district 7
The embodiment of the invention is when design, and substrate 9 is a p+ type Si material, doping content 2 * 10
18Cm
-3, under-clad layer 10 is p type Si, doping content 2 * 10
16Cm
-3, ducting layer 11 is a p type SiGe material, doping content 2 * 10
16Cm
-3The doping content of p type doped region 27 and n type doped region 25,29 is 1 * 10
18Cm
-3
Fig. 3 is the exemplary plot of the present invention's analog result in use, and the used wavelength of board design is λ=1550nm, and the result is as follows:
(1) if light signal only from input port A input, 6,7 when not applying bias voltage in the index modulation district, light signal will be from output port 3 outputs; When only applying bias voltage in index modulation district 6, light signal will be adjusted to output port 4 outputs; When only applying bias voltage in index modulation district 7, light signal will be adjusted to output port 2 outputs; 6,7 when applying bias voltage simultaneously in the index modulation district, and light signal will be adjusted to output port 1 output, respectively shown in Fig. 3 (a), 3 (b), 3 (c) and 3 (d).
(2) if light signal only from the input port B input, 6,7 when not applying bias voltage in the index modulation district, light signal will be from output port 2 outputs; When only applying bias voltage in index modulation district 6, light signal will be adjusted to output port 1 output; When only applying bias voltage in index modulation district 7, light signal will be adjusted to output port 3 outputs; 6,7 when applying bias voltage simultaneously in the index modulation district, and light signal will be adjusted to output port 4 outputs, respectively shown in Fig. 3 (e), 3 (f), 3 (g) and 3 (h).
(3) if light signal is imported simultaneously from input port A, B, 6,7 when not applying bias voltage in the index modulation district, will be respectively from output port 3,2 outputs from the light signal of input port A, B input; When only applying bias voltage in index modulation district 6, will be from the light signal of input port A, B input respectively from output port 4,1 output; When only applying bias voltage in index modulation district 7, will be from the light signal of input port A, B input respectively from output port 2,3 outputs; 6,7 when applying bias voltage simultaneously in the index modulation district, will be respectively from output port 1,4 outputs, respectively shown in Fig. 3 (i), 3 (j), 3 (k) and 3 (1) from the light signal of input port A, B input.
In embodiments of the present invention, refraction index changing district 6,7 forward biases that applied are 1V.The average cross-talk of 2 * 4 optical waveguide switches is 26.7dB, inserts the about 0.9dB of loss.
Claims (10)
1, a kind of 2 * 4 optical waveguide switches based on multimode interference principle is characterized in that including two single mode input waveguides (A), (B), four single mode output waveguides (1), (2), (3), (4) and multimode waveguide district (5).Wherein multimode waveguide district (5) are arranged between input waveguide (A), (B) and output waveguide (1), (2), (3), (4).The inlet end in multimode waveguide district (5) and input waveguide (A), (B) join, and the endpiece of multimode waveguide district (5) and output waveguide (1), (2), (3), (4) join.
2,2 * 4 optical waveguide switches according to claim 1 is characterized in that having done respectively on above-mentioned single mode output waveguide (1) and (4) sweep (12) and (13).
3,2 * 4 optical waveguide switches according to claim 1, it is characterized in that above-mentioned multimode waveguide district (5) is the multiple-mode interfence district, and which is provided with two and can distinguish independent running, index modulation district (6), (7) that also can operate simultaneously, and a rectangle air groove (8).
4,2 * 4 optical waveguide switches according to claim 3, it is characterized in that above-mentioned two index modulation districts (6), (7) and rectangle air groove (8) lay respectively at top, 1/2 end and the end of multiple-mode interfence district (5) on optical propagation direction, on the vertical light direction of propagation, lay respectively at middle a, left side or the right side and the centre in multiple-mode interfence district (5).
5,2 * 4 optical waveguide switches according to claim 4 is characterized in that index modulation district (6), (7) in the above-mentioned multimode waveguide district (5) can be by adding the charge carrier injection region of forward bias control by the pn knot; It also can be light injection region by its refractive index of lighting change; Or in the device course of work, change the zone of its material refractive index by extraneous factors such as thermo-optic effect, acoustooptic effects.
6,, it is characterized in that above-mentioned single mode input waveguide (A), (B), multimode waveguide (5) and single mode output waveguide (1), (2), (3), (4) all are ridge waveguides according to each described 2 * 4 optical waveguide switches of claim 1 to 5.
7,2 * 4 optical waveguide switches according to claim 6, the cross section that it is characterized in that above-mentioned optical waveguide includes substrate (9), under-clad layer (10), ducting layer (11), overlayer (23), and under-clad layer (10), ducting layer (11), overlayer (23) cover on the substrate (9) successively.
8,2 * 4 optical waveguide switches according to claim 7, it is characterized in that in the ducting layer (11) at place, above-mentioned index modulation district (6) p type or n type doped region (25) being arranged, corresponding metal electrode (24) is located at its top, and another metal electrode (26) is located at corresponding substrate (9) below.
9,2 * 4 optical waveguide switches according to claim 7, it is characterized in that having in the ducting layer (11) at place, above-mentioned index modulation district (7) the n type or the p type doped region (27) on p type or n type doped region (29) and its next door, two metal electrodes (30), (28) are located at its top respectively.
10,2 * 4 optical waveguide switches according to claim 7, it is characterized in that above-mentioned ducting layer (11) can be to the transparent photoelectron material of optical communications wavelength (IV family materials such as the Si on the Si base, SiGe, III-V group iii v compound semiconductor material on GaAs base and the InP base, or organic polymer material, macromolecular material, glass-based material and LiNbO
3Material); Above-mentioned substrate (9), under-clad layer (10), overlayer (23) can be to the transparent photoelectron material of near infrared light, also can be to the opaque photoelectron material of near infrared light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510036413 CN1737626A (en) | 2005-08-09 | 2005-08-09 | 2x4 optical wave-guide switch |
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|---|---|---|---|
| CN 200510036413 CN1737626A (en) | 2005-08-09 | 2005-08-09 | 2x4 optical wave-guide switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109952520A (en) * | 2016-10-27 | 2019-06-28 | 三菱电机株式会社 | Optical multiplexer |
| CN116107023A (en) * | 2023-04-13 | 2023-05-12 | 中国科学院长春光学精密机械与物理研究所 | Photonic device based on dense waveguide array and preparation method thereof |
-
2005
- 2005-08-09 CN CN 200510036413 patent/CN1737626A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109952520A (en) * | 2016-10-27 | 2019-06-28 | 三菱电机株式会社 | Optical multiplexer |
| CN116107023A (en) * | 2023-04-13 | 2023-05-12 | 中国科学院长春光学精密机械与物理研究所 | Photonic device based on dense waveguide array and preparation method thereof |
| CN116107023B (en) * | 2023-04-13 | 2023-07-07 | 中国科学院长春光学精密机械与物理研究所 | Photonic device based on dense waveguide array and preparation method thereof |
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