CN116107023B - Photonic device based on dense waveguide array and preparation method thereof - Google Patents
Photonic device based on dense waveguide array and preparation method thereof Download PDFInfo
- Publication number
- CN116107023B CN116107023B CN202310389775.1A CN202310389775A CN116107023B CN 116107023 B CN116107023 B CN 116107023B CN 202310389775 A CN202310389775 A CN 202310389775A CN 116107023 B CN116107023 B CN 116107023B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- array
- dense
- region
- photonic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of optoelectronic devices, and particularly provides a photonic device based on a dense waveguide array and a preparation method thereof. The device comprises a substrate and a dense waveguide array; the dense waveguide array comprises a waveguide input port array, a dense array waveguide modulation area and a waveguide output port array; the waveguide input port array comprises a group of multipath independent waveguide input ports which are not disturbed mutually, and the waveguide output port array comprises a group of waveguide output ports which are not disturbed mutually after decoupling; the dense array waveguide modulation region comprises an upper electrode, a lower electrode, an undoped capacitor and a P-type doped waveguide, wherein the structure in the vertical direction sequentially comprises the lower electrode, the undoped capacitor region, the P-type doped waveguide region and the upper electrode from bottom to top; the waveguide input port, the single-mode optical waveguide and the waveguide output port are sequentially connected through the transition area waveguide. The advantages are that: the method has the obvious advantages of dynamic adjustability and high robustness; the integration level of the optical computing device is improved.
Description
Technical Field
The invention relates to the technical field of optoelectronic devices, in particular to a photonic device based on a dense waveguide array and a preparation method thereof.
Background
Multiple-input multiple-output (Multiple Input Multiple Output, MIMO) optical devices or networks are important building blocks for integrated photonics on chip. The device can be used as a core component device of an optical wavelength division multiplexer/demultiplexer, a mode converter, a directional coupler, a power beam splitter, a high-speed phase/amplitude modulator and the like, and is applied to the fields of optical fiber communication, data center information interaction, on-chip optical signal processing, chip-level optical calculation and the like. The on-chip MIMO device structure mainly comprises: arrayed waveguide gratings (Array Waveguide Grating, AWG), star Couplers (SC), multimode interference waveguides (Multi-mode Interference, MMI) and MMI networks, mach zehnder interference networks (MZI-mesh), and the like.
Two major problems with current on-chip MIMO devices are: 1) The device is large in size, the chip integration level is affected, and 2) the device has single function, does not have adjustable capability after being manufactured, and has poor capability of coping with uncertain disturbance of the process and the outside. Aiming at the first kind of problems, the prior technical implementation scheme mainly comprises the steps of pixelating and binarizing the refractive index distribution of a design area by a reverse design method, then adopting an optimizing algorithm to solve the optimal solution of the refractive index distribution meeting the response requirement of the device, and searching a structure meeting the requirement in a more compact design space. Aiming at the second kind of problems, the current solving mode mainly comprises the steps of constructing an MMI network or an MZI network, setting phase modulation areas at certain nodes in the network, and changing the interference relation in the whole optical network through phase modulation of local optical fields, thereby achieving the functions of dynamically adjusting the input-output mapping relation of the MIMO device and adapting to external disturbance.
The existing technical schemes aiming at two types of problems are very excellent in solving the respective problems, but the thought of the two types of technical routes has serious contradiction through careful analysis. Reverse design methods typically require the introduction of a strong refractive index perturbation through binarization in the geometry of the pixelized device, once the design is completed, the device structure is completely fixed and no longer has the ability to adjust; this places high demands on both the stability of the device and the robustness of the design. Meanwhile, for application scenes such as optical calculation, optical signal processing and the like which need dynamic change of the optical performance of devices, the design method has great limitation before thought; on the other hand, for MMI or MZI networks where the input-output mapping is dynamically tunable, since a large amplitude phase modulation is required at multiple nodes in the mesh, this results in a device size that will expand rapidly (square relationship) as the number of input-output ports increases.
In the aspect of an optical computing chip, ninety percent of computing tasks are derived from vector matrix multiplication, the current main technical scheme is MZI grid type, to complete vector matrix multiplication of an N-way vector, the whole system needs to be deployed with N 2 Individual MZI devices, the footprint of which is about 10000 μm, referenced to the current standard silicon photofabrication 2 Then the area occupied by an N-way optical matrix multiplier would reach N 2 ×10000μm 2 This makes it difficult to integrate a very large scale optical vector matrix multiplier on one optoelectronic chip.
Disclosure of Invention
The invention provides a photonic device based on a dense waveguide array and a preparation method thereof for solving the problems.
A first object of the present invention is to provide a photonic device based on a dense waveguide array, comprising: a substrate, dense waveguide array; the dense waveguide array is arranged on the substrate and comprises a waveguide input port array, a dense array waveguide modulation area and a waveguide output port array;
the waveguide input port array comprises a group of multipath independent waveguide input ports which are not disturbed mutually, and the waveguide output port array comprises a group of waveguide output ports which are not disturbed mutually after decoupling;
the dense array waveguide modulation region comprises a group of single-mode optical waveguides, an upper electrode and a lower electrode which are arranged in parallel, wherein the single-mode optical waveguides comprise undoped capacitors and P-type doped waveguides; the structure of the dense array waveguide modulation region in the vertical direction is sequentially provided with a lower electrode, an undoped capacitor region, a P-type doped waveguide region and an upper electrode from bottom to top; the upper electrode is a metalized ohmic contact P doped region electrode, and the lower electrode is an N-type doped waveguide;
the waveguide input port, the single-mode optical waveguide and the waveguide output port are connected in series through the transition area waveguide in sequence.
Preferably, a partial region of the lower electrode is a metallized ohmic contact N-doped region electrode.
Preferably, the transition zone waveguide is a multimode interference type optical waveguide or an S-bend waveguide.
Preferably, the substrate is an SOI substrate.
The second object of the present invention is to provide a method for manufacturing a photonic device based on a dense waveguide array, comprising the steps of:
s1, cleaning a substrate, and growing a silicon dioxide or silicon nitride mask on the substrate by using a vapor deposition method;
s2, spin coating photoresist, and patterning a region needing N-type doping through photoetching;
s3, implanting N-type doping ions;
s4, removing the photoresist and the mask;
s5, growing a silicon dioxide capacitor layer on the surface of the N-type doped monocrystalline silicon;
s6, growing a polycrystalline silicon waveguide layer, and performing P-type doped ion implantation on the polycrystalline silicon waveguide layer;
s7, defining a waveguide structure through photoetching and etching;
and S8, defining an electrode and metal interconnection structure through a standard process flow.
Preferably, the mask is removed in step S4 by a dry method or a wet method.
Preferably, step S5 grows the silicon dioxide capacitor layer using a plasma enhanced chemical vapor deposition method or a surface oxidation technique.
The third object of the invention is to provide an application of a photonic device based on a dense waveguide array in optical computing chips, optical communication or optical interconnection.
The invention has the beneficial effects that:
the novel MIMO device based on the dense waveguide array is provided, and the compact and efficient dynamic light field modulation is realized by introducing weak disturbance (refractive index variation less than 0.01) with continuously adjustable refractive index into each region of the device with high precision and high resolution and combining with an optimizing algorithm; the design has obvious advantages of dynamic adjustability and high robustness compared with the current mainstream reverse design method when processing the problems of optical communication and optical calculation, and simultaneously has obvious advantages of integration level compared with MMI or MZI grid structures. With the structure of the present invention, the area occupied by an N-way optical matrix multiplier is expected to only need N×4800 μm 2 The integration level of the optical computing device is greatly improved, so that larger-scale and more complex optical computation is finished on a single chip.
Drawings
Fig. 1 is a schematic diagram of a photonic device structure based on a dense waveguide array according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a photonic device based on a dense waveguide array according to an embodiment of the present invention.
Reference numerals:
1. a waveguide input port; 2. a single mode optical waveguide; 3. an upper electrode; 4. a lower electrode; 5. a waveguide output port; 6. a substrate; 7. an S-shaped curved waveguide; 201. an undoped capacitor; 202. a P-doped waveguide; 401. and metallizing the ohmic contact N doped region electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limiting the invention.
The invention provides a photonic device based on a dense waveguide array, comprising: a substrate, dense waveguide array; the dense waveguide array is arranged on the substrate and comprises a waveguide input port array, a dense array waveguide modulation area and a waveguide output port array;
the waveguide input port array comprises a group of multipath independent waveguide input ports which are not disturbed mutually, and the waveguide output port array comprises a group of waveguide output ports which are not disturbed mutually after decoupling;
the dense array waveguide modulation area comprises a group of single-mode optical waveguides, an upper electrode and a lower electrode which are arranged in parallel, wherein the single-mode optical waveguides comprise undoped capacitors and P-type doped waveguides; the structure of the dense array waveguide modulation region in the vertical direction is sequentially provided with a lower electrode, an undoped capacitor region, a P-type doped waveguide region and an upper electrode from bottom to top; the upper electrode is a metalized ohmic contact P doped region electrode, and the lower electrode is an N-type doped waveguide;
the waveguide input port, the single-mode optical waveguide and the waveguide output port are sequentially connected in series through the transition region waveguide; the transition zone waveguide is a multimode interference type optical waveguide or an S-shaped bending waveguide;
the partial area of the lower electrode is a metalized ohmic contact N doped area electrode;
the substrate is an SOI substrate.
In a specific embodiment, the actual number of input ports Nin and the number of output ports Nout can be increased or decreased according to the requirement, the larger the values of Nin and Nout, the longer the length required by the single-mode optical waveguide, the more nodes of the upper electrode and the lower electrode are included on the single-mode optical waveguide, and the higher the integration degree improvement rate of the whole device compared with the traditional MZI grid.
The optical field modulation in the dense array waveguide modulation region can be realized by directly applying different voltages (or injecting different currents) to the upper electrode and the lower electrode of each node on the single-mode optical waveguide. At a time point, the optical signals input by any path of waveguide input ports can be distributed to all waveguide output ports according to any specified splitting ratio by applying different signal combinations on all nodes of the upper electrode and the lower electrode.
The refractive index modulation for dense array waveguide modulation regions may be based on a number of different principles, including but not limited to: carrier dispersion effects, frank-kerdysh effects, quantum confined stark effects, second order photoelectric effects (Pockel Effect), pigtail effects, refractive index transformations by optical phase change materials. The modulated signal may be a voltage signal, a current signal, or an optical signal.
The invention provides a preparation method of a photonic device based on a dense waveguide array, which comprises the following steps:
s1, cleaning a substrate, and growing a silicon dioxide or silicon nitride mask on the substrate by using a vapor deposition method;
s2, spin coating photoresist, and patterning a region needing N-type doping through photoetching;
s3, implanting N-type doping ions;
s4, removing the photoresist, and removing a mask by a dry method or a wet method;
s5, growing a silicon dioxide capacitor layer on the surface of the N-type doped monocrystalline silicon by utilizing a vapor deposition method or a surface oxidation technology of plasma enhanced chemistry;
s6, growing a polycrystalline silicon waveguide layer by using a low-pressure chemical vapor deposition method, and performing P-type doped ion implantation on the polycrystalline silicon waveguide layer;
s7, defining a waveguide structure through photoetching and etching;
and S8, defining an electrode and metal interconnection structure through a standard process flow.
Preferably, the mask in step S1 is a silicon dioxide mask.
Example 1
A dense waveguide array based photonic device as illustrated in fig. 1-2 comprising: a substrate 6, a dense waveguide array; the substrate is an SOI substrate; the dense waveguide array is arranged on the substrate 6 and comprises a waveguide input port array, a dense array waveguide modulation area and a waveguide output port array;
the waveguide input port array comprises four independent waveguide input ports 1 which are not disturbed mutually, and the waveguide output port array comprises four waveguide output ports 5 which are not disturbed mutually after being decoupled;
the dense array waveguide modulation region comprises four paths of single-mode optical waveguides 2, an upper electrode 3 and a lower electrode 4 which are arranged in parallel, wherein the single-mode optical waveguides comprise undoped capacitors 201 and P-type doped waveguides 202; the structure of the dense array waveguide modulation area in the vertical direction is sequentially provided with a lower electrode 4, an undoped capacitor 201, a P-type doped waveguide 202 and an upper electrode 3 from bottom to top; the upper electrode 3 is a metalized ohmic contact P doped region electrode; the lower electrode 4 is an N-doped waveguide, wherein a partial region is a metalized ohmic contact N-doped region electrode 401;
the waveguide input port 1, the single-mode optical waveguide 2 and the waveguide output port 5 are connected in series through an S-shaped bent waveguide 7 in sequence.
By applying different voltage signals to each point of the upper electrode 3 and grounding the electrode 401 of the metalized ohmic contact N doped region, carriers can be accumulated on two sides of each undoped capacitor 201, and further, accurate regulation and control of the refractive index of each section of waveguide are realized by utilizing the carrier dispersion effect.
Example 2
A preparation method of a photonic device based on a dense waveguide array comprises the following steps:
s1, cleaning a substrate, and growing a silicon dioxide mask on the substrate by using a vapor deposition method;
s2, spin coating photoresist, and patterning a region needing N-type doping through photoetching;
s3, implanting N-type doping ions;
s4, removing the photoresist, and removing a mask by a dry method or a wet method;
s5, growing a silicon dioxide capacitor layer on the surface of the N-type doped monocrystalline silicon by utilizing a vapor deposition method or a surface oxidation technology of plasma enhanced chemistry;
s6, growing a polycrystalline silicon waveguide layer by using a low-pressure chemical vapor deposition method, and performing P-type doped ion implantation on the polycrystalline silicon waveguide layer;
s7, defining a waveguide structure through photoetching and etching;
and S8, defining an electrode and metal interconnection structure through a standard process flow.
While embodiments of the present invention have been illustrated and described above, it will be appreciated that the above described embodiments are illustrative and should not be construed as limiting the invention. Variations, modifications, alternatives and variations of the above-described embodiments may be made by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention do not limit the scope of the present invention. Any other corresponding changes and modifications made in accordance with the technical idea of the present invention shall be included in the scope of the claims of the present invention.
Claims (7)
1. A photonic device based on a dense waveguide array, comprising: a substrate, dense waveguide array; the dense waveguide array is arranged on the substrate and comprises a waveguide input port array, a dense array waveguide modulation area and a waveguide output port array;
the waveguide input port array comprises a group of multipath independent waveguide input ports which are not disturbed mutually, and the waveguide output port array comprises a group of waveguide output ports which are not disturbed mutually after decoupling;
the dense array waveguide modulation region comprises a group of single-mode optical waveguides, an upper electrode and a lower electrode which are arranged in parallel, wherein the single-mode optical waveguides comprise undoped capacitors and P-type doped waveguides; the structure of the dense array waveguide modulation region in the vertical direction is sequentially provided with a lower electrode, an undoped capacitor region, a P-type doped waveguide region and an upper electrode from bottom to top; the upper electrode is a metalized ohmic contact P doped region electrode, and the lower electrode is an N-type doped waveguide; the upper electrode comprises a plurality of nodes which are respectively and independently controlled; the undoped capacitor region is a silicon dioxide capacitor layer;
the waveguide input port, the single-mode optical waveguide and the waveguide output port are sequentially connected in series through the transition region waveguide; the number of the waveguide input ports, the single-mode optical waveguide and the waveguide output ports is not less than 4.
2. The dense waveguide array based photonic device of claim 1 wherein: and part of the area of the lower electrode is a metalized ohmic contact N doped area electrode.
3. The dense waveguide array based photonic device of claim 2 wherein: the transition zone waveguide is a multimode interference type optical waveguide or an S-shaped bending waveguide.
4. A dense waveguide array based photonic device according to claim 3 wherein: the substrate is an SOI substrate.
5. The method for manufacturing a dense waveguide array based photonic device of claim 1 comprising the steps of:
s1, cleaning a substrate, and growing a silicon dioxide or silicon nitride mask on the substrate by using a vapor deposition method;
s2, spin coating photoresist, and patterning a region needing N-type doping through photoetching;
s3, implanting N-type doping ions;
s4, removing the photoresist and the mask;
s5, growing a silicon dioxide capacitor layer on the surface of the N-type doped monocrystalline silicon;
s6, growing a polycrystalline silicon waveguide layer, and performing P-type doped ion implantation on the polycrystalline silicon waveguide layer;
s7, defining a waveguide structure through photoetching and etching;
and S8, defining an electrode and metal interconnection structure through a standard process flow.
6. The method for manufacturing a photonic device based on a dense waveguide array according to claim 5, wherein: in the step S4, a dry method or a wet method is used to remove the mask.
7. The method for manufacturing a photonic device based on a dense waveguide array according to claim 6, wherein: the step S5 is to grow the silicon dioxide capacitor layer by using a vapor deposition method or a surface oxidation technology of plasma enhanced chemistry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310389775.1A CN116107023B (en) | 2023-04-13 | 2023-04-13 | Photonic device based on dense waveguide array and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310389775.1A CN116107023B (en) | 2023-04-13 | 2023-04-13 | Photonic device based on dense waveguide array and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116107023A CN116107023A (en) | 2023-05-12 |
| CN116107023B true CN116107023B (en) | 2023-07-07 |
Family
ID=86267624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310389775.1A Active CN116107023B (en) | 2023-04-13 | 2023-04-13 | Photonic device based on dense waveguide array and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116107023B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366598B1 (en) * | 1999-02-10 | 2002-04-02 | Trw Inc. | High power single mode semiconductor lasers and optical amplifiers using 2D Bragg gratings |
| CN1705908A (en) * | 2003-03-19 | 2005-12-07 | 日本电信电话株式会社 | Optical switch, optical modulator and variable wavelength filter |
| CN1737626A (en) * | 2005-08-09 | 2006-02-22 | 中山大学 | 2x4 optical wave-guide switch |
| CN102761060A (en) * | 2011-04-29 | 2012-10-31 | 华为技术有限公司 | Laser, laser manufacturing method and passive optical network system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1558259A (en) * | 2004-01-13 | 2004-12-29 | 中山大学 | Optical power separation and optical cross bonding integrated switch device based on multimode interference principle |
| CN103605218B (en) * | 2013-10-21 | 2016-02-10 | 清华大学 | Waveguide electro-optic modulator and preparation method thereof |
| CN111262130B (en) * | 2020-03-10 | 2022-04-19 | 常州纵慧芯光半导体科技有限公司 | Laser structure and preparation method and application thereof |
| CN115167015A (en) * | 2022-07-05 | 2022-10-11 | 清华大学 | Waveguide modulator and waveguide modulator manufacturing method |
-
2023
- 2023-04-13 CN CN202310389775.1A patent/CN116107023B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366598B1 (en) * | 1999-02-10 | 2002-04-02 | Trw Inc. | High power single mode semiconductor lasers and optical amplifiers using 2D Bragg gratings |
| CN1705908A (en) * | 2003-03-19 | 2005-12-07 | 日本电信电话株式会社 | Optical switch, optical modulator and variable wavelength filter |
| CN1737626A (en) * | 2005-08-09 | 2006-02-22 | 中山大学 | 2x4 optical wave-guide switch |
| CN102761060A (en) * | 2011-04-29 | 2012-10-31 | 华为技术有限公司 | Laser, laser manufacturing method and passive optical network system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116107023A (en) | 2023-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Barwicz et al. | Silicon photonics for compact, energy-efficient interconnects | |
| US11204535B2 (en) | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof | |
| Tsuchizawa et al. | Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications | |
| Jia et al. | WDM-compatible multimode optical switching system-on-chip | |
| CN105629523A (en) | Lithium niobate based tunable optical filter and application thereof | |
| CN113472529B (en) | Quantum interconnection channel switching method and device based on chip integrated optical circuit | |
| CN114779398B (en) | Coarse wavelength division multiplexing silicon light emission chip based on reverse design | |
| Rohit et al. | Monolithic Nanosecond-Reconfigurable 4$\,\times\, $4 Space and Wavelength Selective Cross-Connect | |
| CN114114531A (en) | Silicon-based single-sideband modulator chip with high rejection ratio | |
| CN111880267A (en) | Silicon nitride-assisted lithium niobate thin film waveguide-based fully-integrated optical transceiving system | |
| Matsuo et al. | A widely tunable optical filter using ladder-type structure | |
| CN104918145A (en) | Monolithic integrated multi-wavelength polarization multiplexer/demultiplexer | |
| CN116107023B (en) | Photonic device based on dense waveguide array and preparation method thereof | |
| CN104317000B (en) | The wavelength and space All-optical routing device of modular extendable | |
| CN111538368B (en) | Photon information processing chip | |
| CN104297853B (en) | Modular wavelength and space All-optical routing device | |
| CN111276562A (en) | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer | |
| Pei et al. | Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI | |
| WO2001023955A2 (en) | A nanophotonic mach-zehnder interferometer switch and filter | |
| Fiorentino et al. | Devices and architectures for large scale integrated silicon photonics circuits | |
| CN204270002U (en) | A kind of N of modular extendable 2× N 2wavelength and space All-optical routing device | |
| Itabashi et al. | Integration of optical devices based on Si, Ge and SiOx | |
| CN116107103B (en) | High resolution vertical optical phase modulation array | |
| Hu et al. | Silicon photonic network-on-chip and enabling components | |
| EP2239621B1 (en) | Optical circuit device and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |