CN1851507A - Single-modulation-zone controlled 3X3 multi-mode interference type photoswitch - Google Patents
Single-modulation-zone controlled 3X3 multi-mode interference type photoswitch Download PDFInfo
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- CN1851507A CN1851507A CN 200610051707 CN200610051707A CN1851507A CN 1851507 A CN1851507 A CN 1851507A CN 200610051707 CN200610051707 CN 200610051707 CN 200610051707 A CN200610051707 A CN 200610051707A CN 1851507 A CN1851507 A CN 1851507A
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- waveguide
- single modulator
- modulator zone
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Abstract
The present invention refers to multiple mode interference type optical switch, which is composed of series connected three input waveguides, multimode waveguide zone and three output waveguides; or three input waveguides, two multimode waveguide zones, three connection waveguide, taper transition waveguide, three output waveguides and single modulating zone. The present invention realizes optical switch device having simple modulation, multiple number of channels, high extinction ratio, and wide range according to multiple mode interference operating range property and special phase relationship among image points.
Description
Technical field
The present invention relates to optical switch device, relate in particular to a kind of 3 * 3 multi-mode interference-type photoswitches of single modulator zone control.
Background technology
Optical switch (Optical switches) is to utilize material self character or external modulation, between one or more selectable transmit pories, the light signal in optical transmission line or the integrated optical circuit is switched or the device of logical operation.It is widely used in optical fiber communication, and light interconnection and optical-fiber network in the systems such as optical measurement or sensing, are played the part of the role that channel switches.The integrated optics photoswitch has characteristics such as integrated level height, compact conformation, high-energy utilization factor, speed be fast with respect to traditional mechanical formula switch.The integrated empty somatotype photoswitch of tradition often adopts direction coupled mode, MZ interfere type and full-internal reflection type, adopts the mode of cascade to obtain by the switch number of their designs usually greater than 2 discrete component.For forming N * N switch matrix, when increasing the switch scale, square being directly proportional of common unit switch 2 * 2 switch numbers and N and increasing, also just following by bending, loss problem that cascade brings, and the also increase greatly of the number of electrodes of control.Be the optical computing of satisfying big data quantity and the needs of communicating by letter, increase the way of single switch element in the switch arrays, it is particularly important to improve switch performance.The introducing of 3 * 3 switches not only can improve the way of single switch element, and can freely form abundant matrix switch with 2 * 2 switches.Yet realize 3 * 3 switches or more the common methods of multichannel number be cost to increase the modulator zone number and to improve technology difficulty, the introducing of additional process and modulator zone certainly will increase switching loss and crosstalk, reduce extinction ratio, prolong switching time, thereby influence the global switch effect greatly.In addition, possess good cascade reconstruction and combination function, can keep stable output power to distribute and the space output state based on the device of multimode interference principle, and it is simple in structure, principle is clear, and design is convenient, constitutes optical switch by it and has good prospect.
Summary of the invention
The object of the present invention is to provide a kind of 3 * 3 multi-mode interference-type photoswitches of single modulator zone control.It utilizes the multiple-mode interfence of multimode waveguide to overlap the principle of imaging, only by the phase modulation (PM) to single modulator zone, realizes multi-mode interference-type 3 * 3 optical switch devices.
The technical solution adopted for the present invention to solve the technical problems is:
Scheme one:
A kind of 3 * 3 multi-mode interference-type photoswitches of single modulator zone control comprise substrate base, lower limit layer and sandwich layer; Described sandwich layer is to be made of three input waveguides, multimode waveguide district and three output waveguide series connection; Single modulator zone is positioned in the multimode waveguide district.
Described single modulator zone is positioned at multimode waveguide district 1/3 or 2/3 longitudinal length place, covers adjacent overlapping imaging picture point, and the phase place that single modulator zone is modulated these two picture points is two times of relations.
Described single modulator zone adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine the built-in of single modulator zone.
Scheme two:
3 * 3 multi-mode interference-type photoswitches of another kind of single modulator zone control comprise substrate base, lower limit layer and sandwich layer; Described sandwich layer is to connect waveguide, tapered transitional waveguides by three input waveguides, two multimode waveguide districts, three, and three output waveguides and single modulator zone constitute; The input end of first multimode waveguide connects three input waveguides by conical wave separately, three connect waveguide and connect the output terminal of first multimode waveguide and the input end of second multimode waveguide by the two ends tapered transmission line respectively, three output waveguides of the output terminal of second multimode waveguide are connected with output waveguide by tapered transmission line separately, connect wherein two waveguides place adjacent in the waveguide at three and form a single modulator zone.
Described single modulator zone is positioned in the extended connection waveguide of adjacent overlapping imaging picture point, and single modulator zone is two times of relations to these two phase places that connect the waveguide modulation.
Described single modulator zone adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine that single modulator zone is external.
The beneficial effect that the present invention has is: the present invention is according to special phase relation between the characteristic of multiple-mode interfence device and picture point, realized that modulation is simple, few, the compact conformation of control electrode number, loss is less, the number of channel is many, the extinction ratio height, make big, the wide band optical switch device of tolerance, have wide practical use at aspects such as the interconnection of three dimensions light, optical-fiber network, photometry calculation, optical information processing, open up new road for designing intensive array of photoswitch and optical-fiber network, had important scientific research meaning and using value.
Description of drawings
Fig. 1 is the ultimate principle figure that is realized 3 * 3 multiple-mode interfence photoswitches by single modulator zone modulation picture point;
Fig. 2 is extended down to the picture point of switch shown in Figure 1 outward to connect the exploded view of forming single modulator zone after the waveguide;
Fig. 3 implements figure corresponding to the solid of 3 * 3 multiple-mode interfence photoswitches in the ridge cross section of Fig. 1;
Fig. 4 implements figure corresponding to the solid of 3 * 3 multiple-mode interfence photoswitches in the ridge cross section of Fig. 2.
Among the figure: a, b, c are x=W
Mmi/ 3,0 ,-W
MmiThe input/output port at/3 places and the numbering of picture point; 1, input waveguide; 2, multimode waveguide; 3, output waveguide; 4, single modulator zone; 5, the second multimode waveguides; 6, connect waveguide; 7, tapered transmission line; 8, the ridge cross section; 9, lower limit layer; 10, substrate base.
Embodiment
According to the self-imaging effect of multimode waveguide, input waveguide is connected the waveguide position respectively at W with all among Fig. 1
MMI/ 3,0 and-W
MMI/ 3 places.Use L in the literary composition
MMIAnd W
MMIThe total length and the width of difference mark multimode waveguide.From arbitrary input port excitation light intensity is the light beam of unit 1, and long by first is L
MMI/ 3=L
π=4n
rW
Eff 2/ 3 λ
0Multimode waveguide after present three picture points, wherein n at the terminal correspondence position of waveguide
rBe multimode district effective refractive index, W
EffBe multimode district effective width, λ
0Be operation wavelength.After removing constant phase, amplitude between input port and the picture point and phase relation can be expressed as matrix multiplication:
E
a InFrom the field intensity of a port input, other input condition and the like; M (L
π) be the transfer matrix of amplitude and phase place.After the multimode waveguide end carried out phase modulation (PM) to three picture points, long by another again was 2L
MmiThe transmission of/3 multimode waveguide, the transport property of whole cascade MMI system can be expressed as:
Diagonal matrix M wherein
MRExpression is to picture point or connect the phase place that waveguide is modulated.Because the periodicity of phase modulation (PM), can be with the phase reference of a certain picture point, such as fixing
a=0, just pairing, the horizontal ordinate of modulation port a is not positioned at W
MmiThe picture point at/3 places or the connection waveguide of saying so, and only other two waveguide modulation are got final product, modulator zone formed like this.Studies show that whichsoever input port is excited, change
b,
cOut of phase combination, can switch output light to three a different output port.
Such as the light of light from port a input, by presenting three picture points that power equates behind first multimode waveguide district, its relative phase is (0, π, 4 π/3), carry out (0 if connect waveguide to three again, 2 π/3,4 π/3) phase modulation (PM), and by behind second multimode waveguide | E
a Out|
2: | E
b Out|
2: | E
c Out|
2=0: 1: 0, thus the light from port a input is switched to output port b by output port c.In like manner, change the various combination of input port and phase modulation, can draw the corresponding relation of following table:
Form. under the out of phase modulation, the corresponding relation of input/output port
| Phase modulation (PM) (M MR) | Import from a | Import from b | Import from c |
| ?diag(0，0，0) | Export from c | Export from b | Export from a |
| ?diag(0，2π/3，4π/3) | Export from b | Export from a | Export from c |
| ?diag(0，4π/3，8π/3) | Export from a | Export from c | Export from b |
The third line and fourth line can draw in the comparison sheet, and corresponding amount of phase modulation presents two times of relations.That is to say, fix second amount of phase modulation that is connected waveguide with the 3rd and be two times of relations, can realize the switch combination of any input/output port.Therefore, can modulate simultaneously, form single modulator zone two picture points or modulation waveguide.Physical influence according to different modulating, by changing two times of relations that the modulator zone shape can obtain phase modulation between waveguide, such as when the even refractive index change of single modulator zone, the modulator zone that designs horizontal T type makes that to second modulation length that connects waveguide be two times of the 3rd modulation length that connects waveguide.
To accurately and effectively modulate the phase place of picture point, must before picture point is dispersed, finish phase change.In the expansion structure that can adopt under the following situation as shown in Figure 2: 1) physical influence of the index modulation that is adopted a little less than, reach required amount of phase modulation, need relatively long modulator zone; 2) excessive multimode district variations in refractive index causes reflection loss or the scattering loss that multimode district material is very strong, has a strong impact on the extinction ratio of switch; 3) spread when serious when the physical influence at single modulator zone, the method for equivalent refractive index is unsuitable for describing variations in refractive index gradient etc.The tapered transmission line of introducing among Fig. 27 helps to improve the coupling efficiency of zone of transition and reduces reflection loss.
Embodiment 1:
As shown in Figure 3, the present invention includes substrate base 10, lower limit layer 9 and sandwich layer; Described sandwich layer is to be made of three input waveguides 1, multimode waveguide district 2 and three output waveguide 3 series connection; Single modulator zone 4 is positioned in the multimode waveguide district 2.
Described single modulator zone 4 is positioned at multimode waveguide district 2 1/3 or 2/3 longitudinal length place, covers adjacent overlapping imaging picture point, and the phase place that single modulator zone 4 is modulated these two picture points is two times of relations.
Described single modulator zone 4 adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine the built-in of single modulator zone 4.
Even refractive index change when single modulator zone 4 is modulated, modulator zone can be horizontal T type, and the length of corresponding two modulation waveguides are two times of relations.
Embodiment 2:
As shown in Figure 4, the present invention includes substrate base 10, lower limit layer 9 and sandwich layer; Described sandwich layer be by three input waveguides 1, two multimode waveguide districts 2,5, three connect waveguide 6,7, three output waveguides 3 of tapered transitional waveguides and single modulator zone 4 and constitute; The input end of first multimode waveguide 2 connects three input waveguides 1 by tapered transmission line 7 separately, three connect waveguide 6 and connect the output terminal of first multimode waveguide 2 and the input end of second multimode waveguide 5 by two ends tapered transmission line 7 respectively, three output waveguides 3 of the output terminal of second multimode waveguide 5 are connected with output waveguide 3 by tapered transmission line separately, connect wherein two waveguides place adjacent in the waveguide 6 at three and form a single modulator zone 4.
Described single modulator zone 4 is positioned in the extended connection waveguide 6 of adjacent overlapping imaging picture point, and single modulator zone 4 is two times of relations to these two phase places that connect waveguide 6 modulation.
Described single modulator zone 4 adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine that single modulator zone is external.
Even refractive index change when single modulator zone 4 is modulated, modulator zone can be horizontal T type, and the length of corresponding two modulated connection waveguides is two times of relations.
More than at least three times of model number that the model number that described multimode waveguide is supported is generally supported at input waveguide.
The waveguide cross section of described switch is not limited to ridge 8, also can be different refractivity distribution cross sections such as channel-style, ARROW type, multi-layered type, graded index type.
Described embodiment adopts following scheme: as shown in Figure 3 and Figure 4, and growth one deck 2.5 μ m Al on i-GaAs (100) substrate base 10
0.07Ga
0.93As lower limit layer 9 and one deck 1.5 μ m GaAs sandwich layers.Go out the ridge cross section 8 of 0.6 μ m in the GaAs surface etch.The width of input and output waveguide, connection waveguide is 6 μ m.The multimode waveguide width is 30 μ m, and the width of two multimode waveguides is respectively 3250 μ m and 6500 μ m.The tapered transmission line wide variety is 1 μ m, and length is 400 microns.Plate one deck Al film in sandwich layer GaAs waveguide surface then and go into light-locking material, connect waveguides place at two again and erode away the light beam that size is respectively 6 μ m * 125 μ m and 6 μ m * 250 μ m and go into window as light beam.Total injection region size is 16 μ m * 250 μ m, and this size is enough to guarantee to inject effectively focus on.Realize that all switch attitudes need inject waveguide index that light produces and change and reach 0.0085, and this numerical value is enough to use up and injects induced refractive index and change and realize.
Embodiments of the present invention are a lot, as long as adopt the technological process and the condition of making semiconductor devices usually just to can be made into.Go into the Al of modulation with light beam at this
0.07Ga
0.93 Single modulator zone 3 * 3 multiple-mode interfence switches of As/GaAs ridge are embodiment, but only limit to this embodiment by no means.
Above-mentioned embodiment is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (6)
1. 3 * 3 multi-mode interference-type photoswitches of a single modulator zone control, comprise substrate base (10), lower limit layer (9) and sandwich layer, it is characterized in that: described sandwich layer is to be made of three input waveguides (1), multimode waveguide district (2) and three output waveguides (3) series connection; Single modulator zone (4) is positioned in the multimode waveguide district (2).
2. 3 * 3 multi-mode interference-type photoswitches of a kind of single modulator zone control according to claim 1, it is characterized in that: described single modulator zone (4) is positioned at multimode waveguide district (2) 1/3 or 2/3 longitudinal length place, cover adjacent overlapping imaging picture point, and the phase place that single modulator zone (4) is modulated these two picture points is two times of relations.
3. 3 * 3 multi-mode interference-type photoswitches of a kind of single modulator zone control according to claim 1 and 2, it is characterized in that: described single modulator zone (4) adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine the built-in of single modulator zone (4).
4. 3 * 3 multi-mode interference-type photoswitches of a single modulator zone control, comprise substrate base (10), lower limit layer (9) and sandwich layer, it is characterized in that: described sandwich layer is by three input waveguides (1), two multimode waveguide districts (2,5), three connect waveguide (6), tapered transitional waveguides (7), three output waveguides (3) and single modulator zone (4) formation; The input end of first multimode waveguide (2) connects three input waveguides (1) by tapered transmission line (7) separately, three connect waveguide (6) and connect the output terminal of first multimode waveguide (2) and the input end of second multimode waveguide (5) by two ends tapered transmission line (7) respectively, three output waveguides (3) of the output terminal of second multimode waveguide (5) are connected with output waveguide (3) by tapered transmission line separately, connect wherein two waveguides place adjacent in the waveguide (6) at three and form a single modulator zone (4).
5. 3 * 3 multi-mode interference-type photoswitches of a kind of single modulator zone control according to claim 4, it is characterized in that: described single modulator zone (4) is positioned in the extended connection waveguide of adjacent overlapping imaging picture point (6), and single modulator zone (4) is two times of relations to these two phase places that connect waveguide (6) modulation.
6. according to 3 * 3 multi-mode interference-type photoswitches of claim 4 or 5 described a kind of single modulator zones controls, it is characterized in that: described single modulator zone (4) adopts the several physical phase modulation of material, for light beam is gone into effect, thermo-optic effect, electrooptical effect or charge carrier injection effect, different modulator approaches and physical influence and the length that occurs obvious aberration at the picture point place determine that single modulator zone is external.
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|---|---|---|---|
| CNB2006100517070A CN100385278C (en) | 2006-05-30 | 2006-05-30 | Single-modulation-zone controlled 3X3 multi-mode interference type photoswitch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100517070A CN100385278C (en) | 2006-05-30 | 2006-05-30 | Single-modulation-zone controlled 3X3 multi-mode interference type photoswitch |
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| CN100385278C CN100385278C (en) | 2008-04-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104025376A (en) * | 2012-01-18 | 2014-09-03 | 索尼公司 | Transmission line and transmission method |
| WO2018192021A1 (en) * | 2017-04-17 | 2018-10-25 | 电子科技大学 | Electrically-controlled magneto-optical switch chip |
| CN109143467A (en) * | 2018-10-09 | 2019-01-04 | 南京邮电大学 | A kind of 120 ° of optical mixers based on mixing plasmon optical waveguide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5933554A (en) * | 1995-02-01 | 1999-08-03 | Leuthold; Juerg | Compact optical-optical switches and wavelength converters by means of multimode interference mode converters |
| JP2006023467A (en) * | 2004-07-07 | 2006-01-26 | Mitsubishi Electric Corp | Optical wavelength conversion device |
| CN1696809A (en) * | 2005-01-27 | 2005-11-16 | 中山大学 | Full optical logic gate of optic waveguide |
-
2006
- 2006-05-30 CN CNB2006100517070A patent/CN100385278C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104025376A (en) * | 2012-01-18 | 2014-09-03 | 索尼公司 | Transmission line and transmission method |
| WO2018192021A1 (en) * | 2017-04-17 | 2018-10-25 | 电子科技大学 | Electrically-controlled magneto-optical switch chip |
| CN109143467A (en) * | 2018-10-09 | 2019-01-04 | 南京邮电大学 | A kind of 120 ° of optical mixers based on mixing plasmon optical waveguide |
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| CN100385278C (en) | 2008-04-30 |
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