CN1703771A - Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate - Google Patents
Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate Download PDFInfo
- Publication number
- CN1703771A CN1703771A CNA2003801010227A CN200380101022A CN1703771A CN 1703771 A CN1703771 A CN 1703771A CN A2003801010227 A CNA2003801010227 A CN A2003801010227A CN 200380101022 A CN200380101022 A CN 200380101022A CN 1703771 A CN1703771 A CN 1703771A
- Authority
- CN
- China
- Prior art keywords
- container handling
- dielectric plate
- resin bed
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012545 processing Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000008676 import Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Damage to a dielectric plate supporting unit and a metal vessel is kept to a minimum and the efficiency of plasma processing is improved. A resin layer is provided in a region where a dielectric plate and a processing vessel face each other. With this structure, particles and damage attributed to the difference of thermal expansion coefficients between the dielectric plate and the process vessel can be suppressed. In addition, local discharges at electric field boundaries such as edge portions of the dielectric plate are suppressed, thereby improving the efficiency of plasma processing such as formation of an oxide film.
Description
Technical field
The present invention relates to plasma processing apparatus, especially relate to the container handling that in this plasma processing unit, uses and the structure of dielectric plate with the plasma treatment semiconductor substrate.
Background technology
Surprising with undergoing an unusual development of the treatment technology of the semiconductor substrate of plasma in recent years.By plasma treatment, compared with prior art has the advantage that can make treatment temperature low temperatureization etc. significantly.Plasma processing apparatus is equipped with usually: the container handling of accommodating semiconductor substrate; Supply with the electromagnetic electromagnetic wave supply unit of this container handling; The dielectric plate that between electromagnetic wave supply unit and container handling, disposes (dielectric window).In the device that constitutes like this, import corresponding to the mist of different disposal to handling in the container, by the excitation of electromagnetic wave plasma of microwave etc.Configuration O type ring seal member carries out vacuum seal to container handling between dielectric plate and container handling.
Yet in the plasma processing apparatus of prior art, the contact site between dielectric plate and metal container handling is because both thermal expansion rate variances produce the particle of the friction, cutting of canister etc.Under the poorest situation, the damage of generation dielectric plate breakage etc.In addition, on the electric field boundary portion of the edge part of dielectric plate, produce partial discharge, not only make metallic container damaged, and reduced the efficient of this processing of plasma of the film forming etc. of oxide-film.
Summary of the invention
The present invention does in view of the situation shown in above-mentioned, its objective is when the damage with dielectric plate and metallic container is suppressed to minimum, and plasma processing apparatus, container handling and the dielectric plate that can improve plasma treatment efficient are provided.
In order to achieve the above object, in plasma processing apparatus of the present invention, between dielectric plate and container handling, is furnished with resin bed.In view of the above, can suppress friction, cutting particle by above-mentioned resin bed because of the difference of the coefficient of thermal expansion between dielectric plate and the metallic container handling produces.In addition, be suppressed at the generation of partial discharge at the electric field boundary portion places such as edge part of dielectric plate, can improve the plasma treatment efficient of the film forming etc. of oxide-film.
Description of drawings
Fig. 1 is the skeleton diagram (sectional view) of an example of formation that the plasma processing apparatus of the embodiment of the invention is shown.
Fig. 2 is the sectional view that embodiment major part structure is shown.
Fig. 3 is the curve chart that the embodiment effect is shown, and illustrates between processing time and the thickness to concern.
Fig. 4 is the sectional view that other embodiment major part structure of the present invention is shown.
Embodiment
Fig. 1 illustrates the summary of plasma substrate processing unit 10 formations of using among the present invention.Plasma processing apparatus 10 has and comprises the container handling 11 of maintenance as the substrate holder 12 of the silicon wafer W of processed substrate.Gas in the container handling 11 carries out exhaust from exhaust outlet 11A and 11B through not shown exhaust pump.Substrate holder 12 has the heating function of heating silicon wafer W.
Above the device of container handling 11, corresponding with silicon wafer W on substrate holder 12 and be provided with peristome.This peristome passes through by quartz or Al
2O
3The dielectric plate 13 that forms stops up.Go up the frid 14 of configuration as antenna performance function on the top (outside) of dielectric plate 13.The dielectric plate 15 that more top (outside) configuration of frid 14 is formed by quartz, aluminium oxide, aluminium nitride etc.This dielectric plate 15 usually is called slow-wave plate or wavelength decreases plate.Go up configuration coldplate 16 on the top (outside) of dielectric plate 15.Be provided with coolant cooling medium flowing passage 16a in the inside of coldplate 16.In addition, the coaxial waveguide 18 that imports microwave is set in the central authorities of the upper end of container handling 11.
The gas baffle (space bar) 26 that configuration is made of aluminium around substrate holder 12.Quartzy nappe 28 is set on gas baffle 26.
Be provided for importing the gas nozzle 22 of the gas that in plasma treatment, uses at container handling 11 inwalls.Similarly, surround integral container ground in the inboard of container handling 11 inwalls and form coolant runner 24.
When handling with this plasma processing unit 10, after at first in the container handling 11 that silicon wafer W is placed on plasma processing apparatus 10, through exhaust outlet 11A, 11b the air of container handling 11 inside is carried out exhaust, make container handling 11 inner settings at predetermined process pressure, thereafter, the mist of in the container handling 11 of placing (loadings) and have silicon wafer W, stipulating (for example non-active gas, oxygen, nitrogen etc.) from gas nozzle 22 importings.
On the other hand, the microwave of a few GHz frequencies of supplying with by coaxial waveguide 18 imports in the container handling 11 through dielectric plate 15, frid 14, dielectric plate 13.Generate gas by this microwave excitation plasma, produce plasma.
The high-density plasma that generates by the microwave excitation in container handling 11 makes silicon wafer W surface carry out the oxide-film film forming.
Fig. 2 illustrates near the form the subtend field between dielectric plate 13 and the container handling 11.On container handling 11 inwall sides, form the flange shape outstanding support portion 30 of supporting dielectric plate 13.The groove 32 of O type ring 34 is accommodated in formation on support portion 30.The outer edge of dielectric plate 13 should be supported on the support portion 30.Go up formation resin bed 36 in the subtend zone of dielectric plate 13 and container handling 11 (contact area).
The material of container handling 11 is metals.In contrast, can use the engineering plastics of teflon (login trade mark), polyimides etc. as the material of resin bed 36.Kind, design temperature that the material of resin bed 36 preferably is reacting gas according to plasma process conditions etc. selected.As the formation method of resin bed 36, except Tu cloth sintering processes, also can adopt the method for bonding other parts (resin molding).
Preferably get for example 40～100 μ m as the thickness of resin bed 36.If the thickness of resin bed 36 more than 100 μ m, then forms resin bed 36 by coating and becomes difficult.On the other hand, if resin bed 36 thickness below 40 μ m, then reduce insulation property easily.
As noted above, by resin bed 36 is set, suppressed the friction that difference produced, cutting equivalent damage, in addition, suppressed the generation of partial discharge on the electric field boundary portion of the edge part of dielectric plate 13 etc. because of the coefficient of thermal expansion between dielectric plate 13 and the metallic container handling 11.Its result can suppress the damage to metallic container handling 11.In addition, can improve the plasma treatment efficient of oxide-film film forming etc.The present invention is particularly effective in the operation of handling silicon wafer W by the plasma of high power (for example more than the 3kW).
Fig. 3 illustrates among 2 kinds of different film forming procedure A, B, and thickness changed the processing time.On figure, solid line illustrates the result of the present invention who is provided with resin bed, is shown in dotted line the result of the prior art that resin bed is not set.Shown in going up as figure, according to the present invention, owing to suppressed the generation of partial discharge on the electric field boundary portion of the edge part of dielectric plate 13 etc., so film forming efficiency on average improves about 25%.
The resin bed 36 that Fig. 4 is illustrated in the subtend zone of dielectric plate 13 and container handling 11 forms other example of positions.In the example of Fig. 4,36 of resin beds form in groove 32 outsides, do not form in groove 32 inboards (inboard of container).By such configuration, can prevent as using O
2The situation of plasma causes resin bed 36 damaged own because of condition of plasma like that, and becomes the main cause that produces particle.Even at the example of Fig. 4, also with the situation of Fig. 2 similarly, resin bed 36 also can form on the either party on container handling 11 surfaces, dielectric plate 13 surfaces.
As described above, according to the present invention, owing to resin bed is set in the subtend zone of dielectric plate and container handling, the particle that the friction that inhibition produces because of the thermal expansion rate variance between dielectric plate and the container handling, cutting are caused takes place, in addition, be suppressed at the generation of partial discharge of electric field boundary portion of the edge part etc. of dielectric plate by resin bed.Its result can suppress the damage to the metallic container handling.Other can improve the efficient of plasma treatment of the film forming etc. of oxide-film.
Industrial utilizability
The present invention to the plasma processing apparatus with dielectric plate and metal-made container handling is Useful.
Claims (23)
1, a kind of plasma processing apparatus carries out plasma treatment to semiconductor substrate, it is characterized in that, this plasma processing unit has:
Accommodate the container handling of the semiconductor substrate that should handle;
Electromagnetic wave is supplied with the electromagnetic wave supply unit of described container handling;
The dielectric plate that between described electromagnetic wave supply unit and described container handling, disposes; With
The resin bed that between described dielectric plate and described container handling, disposes.
2, ask 1 described plasma processing apparatus according to right, it is characterized in that,
Described resin bed is configured on the described dielectric plate and the face described container handling subtend.
3, plasma processing apparatus according to claim 1 is characterized in that,
Described resin bed is configured on the described container handling and the face described dielectric plate subtend.
4, plasma processing apparatus according to claim 1 is characterized in that,
The thickness of described resin bed is 40～100 μ m.
5, plasma processing apparatus according to claim 1 is characterized in that,
Described resin bed forms by coating.
6, plasma processing apparatus according to claim 1 is characterized in that,
The material of described resin bed is selected according to the gaseous species that imports in the described container handling.
7, plasma processing apparatus according to claim 1 is characterized in that,
On the inwall of described container handling, form outstanding to the inside flange shape support portion,
The outer edge of described dielectric plate is supported on the described support portion,
On described support portion, form the groove of the O type ring of the described container handling of configuration sealing.
8, plasma processing apparatus according to claim 7 is characterized in that,
The described relatively groove of described resin bed and be configured in the outside that plasma generates the zone.
9, plasma processing apparatus according to claim 7 is characterized in that,
The described relatively groove of described resin bed is configured in inside and outside both sides.
10, plasma processing apparatus according to claim 1 is characterized in that,
Described processing is that the film forming that forms oxide-film on described semiconductor substrate surface is handled.
11, a kind of container handling uses in the plasma processing apparatus that semiconductor substrate is carried out plasma treatment, accommodates described semiconductor substrate, it is characterized in that,
Described plasma processing apparatus encourages plasma by the electromagnetic wave that imports through dielectric plate, imposes predetermined processing by double conductor substrate of this plasma,
Described container handling have and described dielectric plate between the resin bed that disposes.
12, container handling according to claim 11 is characterized in that,
Described resin layer thickness is 40～100 μ m.
13, container handling according to claim 11 is characterized in that,
Described resin bed forms by coating.
14, container handling according to claim 11 is characterized in that,
The material of described resin bed is selected according to the gaseous species that imports described container handling.
15, container handling according to claim 11 is characterized in that,
On the inwall of described container handling, form outstanding to the inside flange shape support portion,
The outer edge of described dielectric plate is supported on the described support portion,
On described support portion, form the groove of the O type ring of the described container handling of configuration sealing.
16, container handling according to claim 15 is characterized in that,
Described resin bed described at least relatively groove and be configured in the outside that plasma generates the zone on described abutment surfaces.
17, container handling according to claim 15 is characterized in that,
The described relatively groove of described resin bed is configured in inside and outside both sides.
18, container handling according to claim 11 is characterized in that,
Described processing is that the film forming that forms oxide-film on described semiconductor substrate surface is handled.
19, a kind of dielectric plate uses in the plasma processing apparatus that semiconductor substrate is imposed predetermined processing by the plasma by the container handling underexcitation, when the electromagnetic wave that imports the described plasma of excitation, sees through this electromagnetic wave, it is characterized in that,
And described container handling between be provided with resin bed.
20, dielectric plate according to claim 19 is characterized in that,
Described dielectric plate is made of aluminium oxide.
21, dielectric plate according to claim 19 is characterized in that,
Described resin layer thickness is 40～100 μ m.
22, dielectric plate according to claim 19 is characterized in that,
Described resin bed forms by coating.
23, dielectric plate according to claim 19 is characterized in that,
The material of described resin bed is selected according to the gaseous species that imports described container handling.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002297689A JP4266610B2 (en) | 2002-10-10 | 2002-10-10 | Plasma processing apparatus, dielectric plate and processing container used therefor |
| JP297689/2002 | 2002-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1703771A true CN1703771A (en) | 2005-11-30 |
| CN100561680C CN100561680C (en) | 2009-11-18 |
Family
ID=32089280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801010227A Expired - Fee Related CN100561680C (en) | 2002-10-10 | 2003-10-10 | Container handling of using in plasma processing apparatus, the plasma processing apparatus and dielectric plate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4266610B2 (en) |
| KR (2) | KR100791660B1 (en) |
| CN (1) | CN100561680C (en) |
| AU (1) | AU2003272975A1 (en) |
| WO (1) | WO2004034455A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667524B (en) * | 2008-09-03 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma treatment device applying same |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100773721B1 (en) * | 2005-10-04 | 2007-11-09 | 주식회사 아이피에스 | Plasma processing apparatus of insulator structure |
| JP4997842B2 (en) * | 2005-10-18 | 2012-08-08 | 東京エレクトロン株式会社 | Processing equipment |
| JP5157199B2 (en) | 2007-03-07 | 2013-03-06 | 東京エレクトロン株式会社 | Vacuum vessel, pressure vessel and sealing method thereof |
| WO2010016414A1 (en) * | 2008-08-08 | 2010-02-11 | 東京エレクトロン株式会社 | Microwave plasma generation device and microwave plasma processing device |
| JP2010251064A (en) * | 2009-04-14 | 2010-11-04 | Ulvac Japan Ltd | Plasma generator |
| US8980047B2 (en) | 2010-07-02 | 2015-03-17 | Samsung Electronics Co., Ltd. | Microwave plasma processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2625756B2 (en) * | 1987-09-08 | 1997-07-02 | 住友金属工業株式会社 | Plasma process equipment |
| DE4217900A1 (en) * | 1992-05-29 | 1993-12-02 | Leybold Ag | Arrangement of microwave-transparent pane in hollow waveguide - the pane being glued to part attached to the vacuum chamber |
| JPH08106993A (en) * | 1994-10-03 | 1996-04-23 | Kokusai Electric Co Ltd | Plasma generator |
| JP2002164330A (en) * | 2000-07-24 | 2002-06-07 | Canon Inc | Plasma treatment apparatus having transmission window covered with light shielding film |
| JP2002270599A (en) * | 2001-03-13 | 2002-09-20 | Canon Inc | Plasma treating apparatus |
-
2002
- 2002-10-10 JP JP2002297689A patent/JP4266610B2/en not_active Expired - Lifetime
-
2003
- 2003-10-10 WO PCT/JP2003/013051 patent/WO2004034455A1/en active Application Filing
- 2003-10-10 AU AU2003272975A patent/AU2003272975A1/en not_active Abandoned
- 2003-10-10 KR KR1020077013776A patent/KR100791660B1/en active IP Right Grant
- 2003-10-10 CN CNB2003801010227A patent/CN100561680C/en not_active Expired - Fee Related
- 2003-10-10 KR KR1020057006152A patent/KR100782623B1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667524B (en) * | 2008-09-03 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma treatment device applying same |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003272975A1 (en) | 2004-05-04 |
| WO2004034455A1 (en) | 2004-04-22 |
| JP4266610B2 (en) | 2009-05-20 |
| KR100791660B1 (en) | 2008-01-03 |
| JP2004134583A (en) | 2004-04-30 |
| KR100782623B1 (en) | 2007-12-06 |
| KR20050047136A (en) | 2005-05-19 |
| CN100561680C (en) | 2009-11-18 |
| KR20070086378A (en) | 2007-08-27 |
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Granted publication date: 20091118 |