CN1701132A - 金属有机化学气相沉积形成Cu2S - Google Patents
金属有机化学气相沉积形成Cu2S Download PDFInfo
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- CN1701132A CN1701132A CNA038254085A CN03825408A CN1701132A CN 1701132 A CN1701132 A CN 1701132A CN A038254085 A CNA038254085 A CN A038254085A CN 03825408 A CN03825408 A CN 03825408A CN 1701132 A CN1701132 A CN 1701132A
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- conductive layer
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- copper sulfide
- memory cell
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G11C2013/009—Write using potential difference applied between cell electrodes
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
Description
Claims (13)
Applications Claiming Priority (2)
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US10/305,889 | 2002-11-26 | ||
US10/305,889 US6798068B2 (en) | 2002-11-26 | 2002-11-26 | MOCVD formation of Cu2S |
Publications (2)
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CN1701132A true CN1701132A (zh) | 2005-11-23 |
CN100593040C CN100593040C (zh) | 2010-03-03 |
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CN03825408A Expired - Fee Related CN100593040C (zh) | 2002-11-26 | 2003-07-10 | 形成促进导电的化合物的系统及方法以及存储器单元 |
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US (1) | US6798068B2 (zh) |
EP (1) | EP1570104A1 (zh) |
JP (1) | JP4708793B2 (zh) |
KR (1) | KR101163681B1 (zh) |
CN (1) | CN100593040C (zh) |
AU (1) | AU2003261138A1 (zh) |
TW (1) | TWI327338B (zh) |
WO (1) | WO2004048637A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102776488A (zh) * | 2011-05-10 | 2012-11-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 化学气相沉积反应腔装置及具有其的化学气相沉积设备 |
CN109454995A (zh) * | 2014-11-03 | 2019-03-12 | 意法半导体股份有限公司 | 微流体递送器件及其制造方法 |
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US6960783B2 (en) * | 2003-05-13 | 2005-11-01 | Advanced Micro Devices, Inc. | Erasing and programming an organic memory device and method of fabricating |
US6921912B2 (en) | 2003-06-03 | 2005-07-26 | Micron Technology, Inc. | Diode/superionic conductor/polymer memory structure |
US6982188B1 (en) * | 2003-12-03 | 2006-01-03 | Advanced Micro Devices, Inc | Post CMP precursor treatment |
US7573133B2 (en) * | 2003-12-09 | 2009-08-11 | Uri Cohen | Interconnect structures and methods for their fabrication |
US7709958B2 (en) | 2004-06-18 | 2010-05-04 | Uri Cohen | Methods and structures for interconnect passivation |
US7307338B1 (en) * | 2004-07-26 | 2007-12-11 | Spansion Llc | Three dimensional polymer memory cell systems |
US7289353B2 (en) * | 2004-08-17 | 2007-10-30 | Spansion, Llc | Systems and methods for adjusting programming thresholds of polymer memory cells |
US7199394B2 (en) * | 2004-08-17 | 2007-04-03 | Spansion Llc | Polymer memory device with variable period of retention time |
US20060049435A1 (en) * | 2004-09-07 | 2006-03-09 | Spansion, Llc | Vertical JFET as used for selective component in a memory array |
US7148144B1 (en) * | 2004-09-13 | 2006-12-12 | Spansion Llc | Method of forming copper sulfide layer over substrate |
US7220642B2 (en) * | 2004-11-12 | 2007-05-22 | Spansion Llc | Protection of active layers of memory cells during processing of other elements |
US7102156B1 (en) * | 2004-12-23 | 2006-09-05 | Spansion Llc Advanced Micro Devices, Inc | Memory elements using organic active layer |
US8098521B2 (en) * | 2005-03-31 | 2012-01-17 | Spansion Llc | Method of providing an erase activation energy of a memory device |
CN101454486B (zh) * | 2006-04-04 | 2013-03-13 | 索罗能源公司 | 用于卷绕处理光电薄膜的组分控制 |
US20070227633A1 (en) * | 2006-04-04 | 2007-10-04 | Basol Bulent M | Composition control for roll-to-roll processed photovoltaic films |
WO2009051799A1 (en) * | 2007-10-18 | 2009-04-23 | Structured Materials Inc. | Germanium sulfide compounds for solid electrolytic memory elements |
JP2012532993A (ja) * | 2009-07-10 | 2012-12-20 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 銅含有膜の堆積のためのビス−ケトイミナート銅前駆体 |
US20110156012A1 (en) * | 2009-11-12 | 2011-06-30 | Sony Corporation | Double layer hardmask for organic devices |
US9695207B2 (en) | 2012-11-19 | 2017-07-04 | Adeka Corporation | Method for producing thin film containing molybdenum |
KR101763545B1 (ko) | 2013-07-23 | 2017-07-31 | 센주긴조쿠고교 가부시키가이샤 | 납땜 장치 및 진공 납땜 방법 |
US10833162B2 (en) * | 2018-08-14 | 2020-11-10 | Pawan Tyagi | Trenched bottom electrode and liftoff based molecular devices |
US11621345B2 (en) * | 2018-08-14 | 2023-04-04 | Pawan Tyagi | Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device |
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JPS6295882A (ja) | 1985-10-23 | 1987-05-02 | Canon Inc | 電気的記憶装置 |
US5840897A (en) * | 1990-07-06 | 1998-11-24 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
JPH04354133A (ja) * | 1991-05-31 | 1992-12-08 | Sony Corp | 銅配線の形成方法 |
SE500480C2 (sv) * | 1991-08-09 | 1994-07-04 | Ahmad Reza Shirazi | Sätt vid inaskning av fasta bränslen under låg temperatur |
US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
JP3681870B2 (ja) * | 1997-09-05 | 2005-08-10 | 松下電池工業株式会社 | 化合物半導体膜の製造方法および太陽電池 |
US6429117B1 (en) * | 2000-07-19 | 2002-08-06 | Chartered Semiconductor Manufacturing Ltd. | Method to create copper traps by modifying treatment on the dielectrics surface |
JP4118500B2 (ja) * | 2000-11-01 | 2008-07-16 | 独立行政法人科学技術振興機構 | ポイントコンタクト・アレー |
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2002
- 2002-11-26 US US10/305,889 patent/US6798068B2/en not_active Expired - Lifetime
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2003
- 2003-07-10 CN CN03825408A patent/CN100593040C/zh not_active Expired - Fee Related
- 2003-07-10 WO PCT/US2003/021669 patent/WO2004048637A1/en active Application Filing
- 2003-07-10 KR KR1020057009467A patent/KR101163681B1/ko active IP Right Grant
- 2003-07-10 AU AU2003261138A patent/AU2003261138A1/en not_active Abandoned
- 2003-07-10 EP EP03811994A patent/EP1570104A1/en not_active Ceased
- 2003-07-10 JP JP2004555271A patent/JP4708793B2/ja not_active Expired - Fee Related
- 2003-08-29 TW TW092123888A patent/TWI327338B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102776488A (zh) * | 2011-05-10 | 2012-11-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 化学气相沉积反应腔装置及具有其的化学气相沉积设备 |
CN102776488B (zh) * | 2011-05-10 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 化学气相沉积反应腔装置及具有其的化学气相沉积设备 |
CN109454995A (zh) * | 2014-11-03 | 2019-03-12 | 意法半导体股份有限公司 | 微流体递送器件及其制造方法 |
US11001061B2 (en) | 2014-11-03 | 2021-05-11 | Stmicroelectronics S.R.L. | Method for manufacturing microfluid delivery device |
Also Published As
Publication number | Publication date |
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WO2004048637A1 (en) | 2004-06-10 |
KR101163681B1 (ko) | 2012-07-11 |
US6798068B2 (en) | 2004-09-28 |
TWI327338B (en) | 2010-07-11 |
EP1570104A1 (en) | 2005-09-07 |
JP4708793B2 (ja) | 2011-06-22 |
US20040102038A1 (en) | 2004-05-27 |
JP2006507410A (ja) | 2006-03-02 |
AU2003261138A1 (en) | 2004-06-18 |
KR20050086845A (ko) | 2005-08-30 |
TW200416840A (en) | 2004-09-01 |
CN100593040C (zh) | 2010-03-03 |
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