CN1690860A - 显影液移除装置 - Google Patents

显影液移除装置 Download PDF

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Publication number
CN1690860A
CN1690860A CNA2004100270384A CN200410027038A CN1690860A CN 1690860 A CN1690860 A CN 1690860A CN A2004100270384 A CNA2004100270384 A CN A2004100270384A CN 200410027038 A CN200410027038 A CN 200410027038A CN 1690860 A CN1690860 A CN 1690860A
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China
Prior art keywords
developer solution
nozzle
deionized water
substrate
support
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Pending
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CNA2004100270384A
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English (en)
Inventor
许文诚
王敬龙
詹育颖
曾增魁
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Hongfujin Precision Industry Shenzhen Co Ltd
Innolux Corp
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Hongfujin Precision Industry Shenzhen Co Ltd
Innolux Corp
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Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Innolux Corp filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNA2004100270384A priority Critical patent/CN1690860A/zh
Priority to US11/111,141 priority patent/US7367725B2/en
Publication of CN1690860A publication Critical patent/CN1690860A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
    • G03D5/00—Liquid processing apparatus in which no immersion is effected; Washing apparatus in which no immersion is effected
    • G03D5/04—Liquid processing apparatus in which no immersion is effected; Washing apparatus in which no immersion is effected using liquid sprays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明公开一显影液移除装置，其包括一承载基板的工作台和一支架，其中，该支架上设置有一去离子水喷嘴和一气体喷嘴，该去离子水喷嘴和一气体喷嘴分别与两个枢纽连接。该装置可快速且安全地排除位于基板表面的显影液。

Description

显影液移除装置
【技术领域】
本发明是关于一种显影制程设备，特别是一种显影液移除装置。
【背景技术】
微影制程主要由光阻涂覆、曝光和显影所组成。涂覆制程是将光阻均匀的涂覆在基板表面；曝光制程是利用光阻感光的特性将光罩上的图案转移到光阻上面；显影制程是使用显影液将不必要的光阻去除，使图形完整的显现在基板上。
就显影制程而言，薄膜电晶体(TFT，Thin Film Transistor)业界一般是利用玻璃和显影液喷嘴之间的相对移动来实现显影液涂覆至玻璃基板表面的，然后静置一段时间待反应完成后，再将玻璃基板表面的显影液移除。
请参阅图1，是一现有技术的移除玻璃基板表面显影液的装置1，其包括一工作台15、支架14。该工作台15边缘设置有多个可上下伸缩的伸缩杆12，该支架14固定于该工作台15上，其上有一喷嘴13，该喷嘴13是用于向基板11上喷射显影液。在喷嘴13向基板11喷射显影液时，伸缩杆12缩入工作台15内，待反应结束，伸缩杆12升起，使显影液从基板11上方流下，实现显影液从基板11上移除的动作。此种显影液移除装置1有如下缺陷：a.玻璃需要另行倾斜或顶起，容易造成碎片，安全性低。b.玻璃倾斜或顶起后，须等待显影液流下，才可执行下一步骤，增加了操作工时。
请参阅图2，为另一现有技术的移除玻璃基板表面显影液的装置2，其包括一工作台25、支架24。该工作台25中央设置有多个可上下伸缩的伸缩杆22，该支架24固定于该工作台25上，其上有一喷嘴23，该喷嘴23是用于向基板21上喷射显影液。在喷嘴23向基板21喷射显影液时，伸缩杆22缩入工作台内，待反应结束，伸缩杆22升起，使显影液从基板21上方流下，实现显影液从基板21上移除的动作。该显影液移除装置2与显影液移除装置1区别在于其伸缩杆22设置在工作台25中央，相较显影液移除装置1其显影液移除时间减少，减少了部分操作时间，但仍然有易造成碎片的缺陷。
【发明内容】
为克服现有技术显影液移除装置安全性低和操作速度较慢的缺陷，本发明提供一种安全性高和操作速度快的显影液移除装置。
本发明解决技术问题的技术方案是：提供一显影液移除装置，其包括一承载基板的工作台和一支架，其中，该支架上设置有一去离子水喷嘴和一气体喷嘴，该去离子水喷嘴和一气体喷嘴分别与两个枢纽连接。
相较现有技术，本发明的有益效果是：本发明显影液移除装置利用气体和去离子水来清除基板表面的显影液，无需抬起基板，降低了造成碎片的几率，提高了安全性，另外，也不用等待显影液流下，节省了操作时间。
【附图说明】
图1是现有技术显影液移除装置的立体图。
图2是另一现有技术显影液移除装置的立体图。
图3是本发明显影液移除装置立体图。
图4是本发明显影液移除装置平面图。
【具体实施方式】
请一起参阅图3和图4，图3是本发明显影液移除装置第一实施方式的立体图，图4是本发明显影液移除装置第一实施方式的平面图。本发明显影液移除装置3包括一工作台36、一支架33、一喷嘴支撑桥37、一气体喷嘴31和一去离子水喷嘴32。该工作台36是用来承载基板30的，该支架33固定于工作台36上，喷嘴支撑桥34固定于支架33上，气体喷嘴3 1和离子水喷嘴32分别位于喷嘴支撑桥34两侧，另外，气体喷嘴31和离子水喷嘴32分别通过枢纽34、35与喷嘴支撑桥37连接，这样气体喷嘴31和离子水喷嘴32可以以不同角度向基板喷射气体和去离子水，选择最佳的工作状态。当显影液将光阻去除后，该显影液去除装置启动，气体喷嘴31和一去离子水喷嘴32分别喷出气体和去离子水，而基板30与工作台上移动，先后经过气体喷嘴31和一去离子水喷嘴32，即先由气体流将基板30表面的显影液吹掉，再使用去离子水清洗基板30表面。
该显影液移除装置3使用位置固定角度可调的气体喷嘴31和一去离子水喷嘴32来清除基板30表面的显影液，无需抬起基板30，降低了造成碎片的几率，提高了安全性，另外，也不用等待显影液流下，可边喷射气体和去离子水边移动基板30，节省了操作时间。

Claims (4)

1.一显影液移除装置，其包括一承载基板的工作台和一支架，其特征在于：该支架上设置有一去离子水喷嘴和一气体喷嘴。
2.如权利要求1所述的显影液移除装置，其特征在于：该支架中部有一喷嘴支撑桥，该喷嘴支撑桥位于该去离子水喷嘴和一气体喷嘴之间。
3.如权利要求1所述的显影液移除装置，其特征在于：该气体喷嘴与一枢纽连接。
4.如权利要求1或3所述的显影液移除装置，其特征在于：该去离子水喷嘴与一枢纽连接。
CNA2004100270384A 2004-04-22 2004-04-22 显影液移除装置 Pending CN1690860A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2004100270384A CN1690860A (zh) 2004-04-22 2004-04-22 显影液移除装置
US11/111,141 US7367725B2 (en) 2004-04-22 2005-04-20 Method for removing developing solution

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Application Number Priority Date Filing Date Title
CNA2004100270384A CN1690860A (zh) 2004-04-22 2004-04-22 显影液移除装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102650836A (zh) * 2012-05-09 2012-08-29 郝强 平网显影机
CN103521491A (zh) * 2013-09-25 2014-01-22 京东方科技集团股份有限公司 清洗液吸取装置和显影液冲洗设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8277569B2 (en) 2004-07-01 2012-10-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110940A (en) * 1980-01-25 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for developing and rinsing photoresist
US6372389B1 (en) 1999-11-19 2002-04-16 Oki Electric Industry Co, Ltd. Method and apparatus for forming resist pattern
US6692165B2 (en) * 2001-03-01 2004-02-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
JP2003037053A (ja) * 2001-07-26 2003-02-07 Toshiba Corp 塗布型成膜方法、塗布型成膜装置及び半導体装置の製造方法
US7018481B2 (en) * 2002-01-28 2006-03-28 Kabushiki Kaisha Toshiba Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle
US6770424B2 (en) * 2002-12-16 2004-08-03 Asml Holding N.V. Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102650836A (zh) * 2012-05-09 2012-08-29 郝强 平网显影机
CN103521491A (zh) * 2013-09-25 2014-01-22 京东方科技集团股份有限公司 清洗液吸取装置和显影液冲洗设备
CN103521491B (zh) * 2013-09-25 2015-05-20 京东方科技集团股份有限公司 清洗液吸取装置和显影液冲洗设备

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US7367725B2 (en) 2008-05-06

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