CN1685285B - 193nm抗蚀剂 - Google Patents
193nm抗蚀剂 Download PDFInfo
- Publication number
- CN1685285B CN1685285B CN038233509A CN03823350A CN1685285B CN 1685285 B CN1685285 B CN 1685285B CN 038233509 A CN038233509 A CN 038233509A CN 03823350 A CN03823350 A CN 03823350A CN 1685285 B CN1685285 B CN 1685285B
- Authority
- CN
- China
- Prior art keywords
- acid
- resist
- composition
- far
- acid labile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/261,249 US7087356B2 (en) | 2002-09-30 | 2002-09-30 | 193nm resist with improved post-exposure properties |
US10/261,249 | 2002-09-30 | ||
PCT/EP2003/010688 WO2004029719A1 (en) | 2002-09-30 | 2003-08-28 | 193nm resist |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685285A CN1685285A (zh) | 2005-10-19 |
CN1685285B true CN1685285B (zh) | 2012-11-21 |
Family
ID=32029921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN038233509A Expired - Fee Related CN1685285B (zh) | 2002-09-30 | 2003-08-28 | 193nm抗蚀剂 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7087356B2 (zh) |
EP (1) | EP1550003A1 (zh) |
JP (1) | JP4456484B2 (zh) |
KR (1) | KR100707525B1 (zh) |
CN (1) | CN1685285B (zh) |
AU (1) | AU2003273924A1 (zh) |
TW (1) | TWI249080B (zh) |
WO (1) | WO2004029719A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1732408B (zh) * | 2002-12-28 | 2010-04-21 | Jsr株式会社 | 辐射敏感性树脂组合物 |
US7906268B2 (en) * | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
US7208334B2 (en) * | 2004-03-31 | 2007-04-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device, acid etching resistance material and copolymer |
JP2011026608A (ja) * | 2004-04-23 | 2011-02-10 | Sumitomo Chemical Co Ltd | 化学増幅型ポジ型レジスト組成物及び(メタ)アクリル酸誘導体とその製法 |
EP1621927B1 (en) | 2004-07-07 | 2018-05-23 | FUJIFILM Corporation | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
JP5111895B2 (ja) * | 2006-03-10 | 2013-01-09 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトリソグラフィーの組成物および方法 |
JP2008009269A (ja) * | 2006-06-30 | 2008-01-17 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
EP1975714A1 (en) * | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
JP5124326B2 (ja) | 2007-03-28 | 2013-01-23 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
JP5155764B2 (ja) * | 2007-08-20 | 2013-03-06 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
US8034533B2 (en) * | 2008-01-16 | 2011-10-11 | International Business Machines Corporation | Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same |
US20090181319A1 (en) * | 2008-01-16 | 2009-07-16 | International Business Machines Corporation | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same |
US8182978B2 (en) | 2009-02-02 | 2012-05-22 | International Business Machines Corporation | Developable bottom antireflective coating compositions especially suitable for ion implant applications |
US8017303B2 (en) * | 2009-02-23 | 2011-09-13 | International Business Machines Corporation | Ultra low post exposure bake photoresist materials |
US8343706B2 (en) | 2010-01-25 | 2013-01-01 | International Business Machines Corporation | Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same |
KR101458946B1 (ko) * | 2012-10-17 | 2014-11-07 | 금호석유화학 주식회사 | 신규 아크릴계 단량체, 중합체 및 이를 포함하는 레지스트 조성물 |
KR101583226B1 (ko) * | 2012-11-21 | 2016-01-07 | 제일모직 주식회사 | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
CN112341337A (zh) * | 2020-10-21 | 2021-02-09 | 宁波南大光电材料有限公司 | 双酯结构单体及其制备方法和应用 |
WO2024175523A1 (en) | 2023-02-21 | 2024-08-29 | Merck Patent Gmbh | Acceptor-substituted euv pags with high electron affinity |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6114422A (en) * | 1998-10-29 | 2000-09-05 | Samsung Electronics Co., Ltd. | Resist composition containing dialkyl malonate in base polymer |
US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
EP1096317A1 (en) * | 1999-10-25 | 2001-05-02 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
US6280898B1 (en) * | 1998-09-25 | 2001-08-28 | Shin-Etsu Chemical Co., Ltd. | Lactone-containing compounds, polymers, resist compositions, and patterning method |
WO2002006901A2 (en) * | 2000-07-19 | 2002-01-24 | Clariant International Ltd | Photoresist composition for deep uv and process thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100261224B1 (ko) * | 1998-05-07 | 2000-09-01 | 윤종용 | 실리콘을 함유하는 폴리머 및 이를 포함하는 화학증폭형 레지스트 조성물 |
KR100382960B1 (ko) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
JP2001075284A (ja) * | 1998-12-03 | 2001-03-23 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
US6140015A (en) | 1998-12-10 | 2000-10-31 | International Business Machines Corporation | Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching |
JP4576737B2 (ja) * | 2000-06-09 | 2010-11-10 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4790153B2 (ja) * | 2000-09-01 | 2011-10-12 | 富士通株式会社 | ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法 |
JP3844057B2 (ja) | 2000-11-21 | 2006-11-08 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP3914386B2 (ja) * | 2000-12-28 | 2007-05-16 | 株式会社ルネサステクノロジ | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
JP3853168B2 (ja) * | 2001-03-28 | 2006-12-06 | 松下電器産業株式会社 | パターン形成方法 |
US6927009B2 (en) * | 2001-05-22 | 2005-08-09 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
KR100436220B1 (ko) * | 2001-08-30 | 2004-06-12 | 주식회사 네패스 | 바닥 반사방지막용 유기 중합체, 그의 제조방법 및 그를함유하는 조성물 |
-
2002
- 2002-09-30 US US10/261,249 patent/US7087356B2/en not_active Expired - Fee Related
-
2003
- 2003-08-28 AU AU2003273924A patent/AU2003273924A1/en not_active Abandoned
- 2003-08-28 JP JP2004539024A patent/JP4456484B2/ja not_active Expired - Fee Related
- 2003-08-28 WO PCT/EP2003/010688 patent/WO2004029719A1/en active Application Filing
- 2003-08-28 EP EP03757891A patent/EP1550003A1/en not_active Withdrawn
- 2003-08-28 KR KR1020057003616A patent/KR100707525B1/ko not_active IP Right Cessation
- 2003-08-28 CN CN038233509A patent/CN1685285B/zh not_active Expired - Fee Related
- 2003-09-05 TW TW092124580A patent/TWI249080B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
US6280898B1 (en) * | 1998-09-25 | 2001-08-28 | Shin-Etsu Chemical Co., Ltd. | Lactone-containing compounds, polymers, resist compositions, and patterning method |
US6114422A (en) * | 1998-10-29 | 2000-09-05 | Samsung Electronics Co., Ltd. | Resist composition containing dialkyl malonate in base polymer |
EP1096317A1 (en) * | 1999-10-25 | 2001-05-02 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
WO2002006901A2 (en) * | 2000-07-19 | 2002-01-24 | Clariant International Ltd | Photoresist composition for deep uv and process thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2004029719A1 (en) | 2004-04-08 |
US20040063024A1 (en) | 2004-04-01 |
AU2003273924A1 (en) | 2004-04-19 |
JP2006501495A (ja) | 2006-01-12 |
KR20050074442A (ko) | 2005-07-18 |
TWI249080B (en) | 2006-02-11 |
KR100707525B1 (ko) | 2007-04-12 |
JP4456484B2 (ja) | 2010-04-28 |
CN1685285A (zh) | 2005-10-19 |
US7087356B2 (en) | 2006-08-08 |
TW200405129A (en) | 2004-04-01 |
EP1550003A1 (en) | 2005-07-06 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: INTERNATIONAL BUSINESS MACHINE CORP.; APPLICANT Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINE CORP. Effective date: 20070427 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070427 Address after: American New York Applicant after: International Business Machines Corp. Co-applicant after: JSR Co., Ltd. Address before: American New York Applicant before: International Business Machines Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121121 Termination date: 20160828 |