CN1646721A - 用于形成电子组件外壳的方法和以这种方法密封封装的电子组件 - Google Patents

用于形成电子组件外壳的方法和以这种方法密封封装的电子组件 Download PDF

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CN1646721A
CN1646721A CNA038085836A CN03808583A CN1646721A CN 1646721 A CN1646721 A CN 1646721A CN A038085836 A CNA038085836 A CN A038085836A CN 03808583 A CN03808583 A CN 03808583A CN 1646721 A CN1646721 A CN 1646721A
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Prior art keywords
substrate
glass
described method
mentioned
coating
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CNA038085836A
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CN100387749C (zh
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杰根·雷布
迪特里希·曼德
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Schott AG
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Schott Glaswerke AG
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Priority claimed from DE10222609A external-priority patent/DE10222609B4/de
Priority claimed from DE10222958A external-priority patent/DE10222958B4/de
Priority claimed from DE10222964A external-priority patent/DE10222964B4/de
Application filed by Schott Glaswerke AG filed Critical Schott Glaswerke AG
Publication of CN1646721A publication Critical patent/CN1646721A/zh
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
    • C—CHEMISTRY; METALLURGY
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    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract

为了以一种方式封装电子组件，它基本上是抗水扩散的，然而在适当的低于300℃，优选低于150℃的温度下进行，本发明提供一种用于形成电子组件，特别是传感器、集成电路以及光电元件外壳的方法，包括以下步骤：设置一个基片(1)，它的至少一个基片第一侧面(1a)要被封装；设置一个汽相淀积玻璃源(20)；以这种方式相对于汽相淀积玻璃源设置基片第一侧面(1a)，使基片第一侧面(1a)可以被蒸发涂敷；将基片第一侧面蒸发涂敷上一玻璃层(4)。

Description

用于形成电子组件外壳的方法和 以这种方法密封封装的电子组件
技术领域
本发明涉及一种用于形成电子组件外壳的方法，以及以这种方法密封封装的电子组件，特别是传感器、集成电路以及光电元件。
背景技术
为了封装集成电路和光电元件，公知的是使用有机粘合剂层来将薄玻璃板粘结到组件上，并且由此来覆盖和保护灵敏的半导体结构。该设计的缺点是在整个时间过程中，水能够扩散到有机粘合剂层中并且能够达到以及损坏半导体组件。此外，有机粘结剂由于UV辐射会老化，该辐射尤其损坏光电组件。
作为有机粘结剂的替换，低溶解的玻璃焊剂也已经用作为中间层，该中间层已经被喷射上、溅射上或通过网印和分配技术而被施加。然而，用于溶解玻璃焊剂层的工艺温度高于T＝300℃，它意味着温度灵敏的半导体结构不能被封装。
发明内容
由此本发明基于这个目的，即提供一种用于封装电子组件的方法，它使得能够达到基本上抗水扩散的封装，然而在合适的低于300℃，优选低于150℃的温度下进行。
该组目的基于在权利要求1中所述的方法来达到，并且通过从属权利要求的进一步措施来构成和扩展。权利要求24涉及一种可按照本发明生产的电子组件，而有利的改进和构造在从属于权利要求24的各权利要求中给出。
涂覆汽相淀积玻璃的一个优点是，在常温到接近150℃时施加绝缘玻璃层，以便没有基片表面的损坏或氧化的可能性，无论什么，甚至是金属基片。在本上下文中，也可以参考以下面申请：
DE 202 05 830.1，于04.15.2002提交；
DE 102 22 964.3，于05.23.2002提交；
DE 102 22 609.1，于05.23.2002提交；
DE 102 22 958.9，于05.23.2002提交；
DE 102 52 787.3，于11.13.2002提交；
DE 103 01 559.0，于01.16.2003提交；
以相同申请人的名义，在此特别结合其公开内容以供参考。
关于汽相淀积玻璃层的阻隔性质，测量已经示出了在8μm到18μm范围内的汽相淀积玻璃层的层厚度，氦漏泄率小于10-7mbar l s-1或小于10-8 mbar l s-1是可以可靠达到的。对于带有8μm到18μm范围内层厚度的测量甚至具有在0到2×10-9mbar l s-1之间的氦泄漏率，并且甚至这些上限值是明显受不精确测量值的影响。
按照本发明用于以汽相淀积玻璃封装的方法，甚至当它仍然生产时电子组件被腐蚀能够被采用。
使通过汽相沉积玻璃层产生的电子组件基片变厚，用来在从未封装侧面在基片上进行反应时稳定基片。另外完工的电子组件也可以从连接侧面被封装，而使连接本身敞露。为此目的，例如基片可以在与具有半导体结构的第一侧面相反的侧面上设有钝化层。作为实例，塑料层适用于此目的。钝化层也可以包括玻璃层，该玻璃层优选汽相淀积在此侧面上。
本方法特别适用于封装元件，该封装元件仍然形成晶片一部分(晶片级封装)，在这种情况下，基片包括一具有元件基片的晶片，在它们被封装后可以与晶片分开。
取决于特殊的要求，汽相淀积玻璃层的厚度可以为0.01到100μm。如果它仅仅是将待保护组件密封的情况。优选的是，玻璃层厚度在0.1和50μm之间的范围内。如果施加的负载较大，玻璃层厚度相应增加，对于玻璃层厚度优选的范围在50到200μm之间。在与其它材料组合时，也可以建立多层。此外，也可以将玻璃层与施加的塑料层相组合，以便在结构上加固电子组件。
有许多用于玻璃汽相淀积的选择。优选的是通过电子束从原料玻璃靶中产生玻璃蒸汽。可以产生高于4μm/min的汽相淀积率，并且所产生的玻璃被沉积有一可靠粘结在基片表面上，而没有必要增加用于粘结作用的水含量，如具有低溶解玻璃粘结剂的情况那样。优选的汽相淀积玻璃是一种含有氧化铝和碱金属氧化物部分的硼硅玻璃，例如由Schott Glas生产的8329型汽相淀积玻璃。此外，该玻璃具有一个热膨胀系数，它接近于标准半导体结构的基片的热膨胀系数，或者能够通过对元件适合的修改与基片的热膨胀系数相匹配。可以使用其它成分的汽相淀积玻璃，特别是在彼此顶面的多层中，在这种情况下，各玻璃层可以具有关于折射率、密度、硬度等等不同的特性。
将基片汽相淀积上玻璃层可以有利也包括等离子区源离子辅助沉积(PIAD)。在这种情况下，离子束附加地指向在待涂覆的基片。离子束可以通过等离子体源产生，例如通过合适气体的电离。等离子体导致层的附加密封作用以及从基片表面中去除松散粘附的颗粒。这导致特别密实的低缺陷的沉积层。
此外，通过选择合适的材料组合，可以实现施加有机和无机成分混合层。该混合层的特征在于，降低了其脆性。
在该电子组件已经被完全生产之前，如果玻璃层被施加于电子组件基片的第一侧面上，可以有利地，在玻璃层上方施加一加固组件的塑料层，在生产完成期间用于处理目的。在这种情况下，玻璃层产生有一个厚度，它相对于扩散物质渗透的密封或封装是足够的，同时以一个厚度产生一塑料层，在组件的进一步处理期间的稳定性需要该厚度。
在这种情况下，可以从未封装的基片第二侧面上去除材料，以便能够产生与组件的接头，当组件最后被安装在其使用位置时，这些接头从下侧面延伸到组件中并且由此通过组件本身而被保护。这尤其在传感器的情况下是有重要意义的。
附图说明
参考附图描述本发明，附图中：
图1示出了带有一汽相淀积玻璃层的晶片剖面图；
图2示出了带有玻璃层和塑料层的晶片剖面图；
图3示出了与晶片有关的生产；
图4示出了晶片下侧的附加塑料钝化；
图5示出了带有汽相淀积玻璃的晶片下侧的涂层；
图6示出了将球状栅极阵列施加到在图5中所示的晶片上；
图7示出了应用球状栅极阵列的另一种方法；
图8示出了晶片下侧的封装；
图9示出了将球状栅极阵列施加到在图8中所示的晶片上；
图10示出了汽化装置的简图；
图11示出了TOF-SIMS测量的结果，以及
图12示出了电子显微镜横向显微磨片图像。
具体实施方式
图10示出了汽相淀积玻璃源20相对于基片1的布置，它包括电子束发生器21、电子束转向器22以及电子束24撞击在其上的玻璃靶23。在电子束撞击所在的位置上，玻璃被汽化并且然后沉积到基片1的第一侧面1a上。为了允许玻璃从靶23上尽可能均匀地被汽化，靶是旋转的并且电子束24沿着它来回地扫描。此外，该布置也可以包括用于产生离子束的等离子体源，在操作中，它被指向待涂层的侧面1a，以便通过等离子区源离子辅助沉积(PIAD)使基片涂上玻璃层。
关于可能的基片1更详细的叙述，参考图1。硅片作为基片1包括具有半导体结构的区域2和具有连接结构的区域3，例如由铝制成。连接结构例如可以包括粘结垫或其它连接表面。硅片构成具有＜5μm的表面粗糙度的基片。基片的顶面1a是与底面1b相对的面。玻璃层4已经被沉积在顶面1a上，优选此玻璃层从由Schott生产的8329型的汽相淀积玻璃中获得。这种类型的玻璃可以基本上通过电子束24的作用被汽化，在抽空的环境中10-4毫巴剩余压力的条件下以及在100℃的汽化期间的偏压温度下执行该工作。在这些条件下，产生一种了密实的、连续的玻璃层4，并且该层对于气体和液体包括水基本上是不能透过的，但是能透过光，这在光电组件的情况下是重要的。
玻璃层4也可以包括多层单独的层，例如由带有不同组分的玻璃制成。玻璃层也可以包括由无机成分和有机成分形成的混合层，例如为了达到增加的层挠性。
晶片的下侧1b可用于进一步的工艺步骤，它包括湿、干和等离子腐蚀或清洗。
如在图1和其它的图2到9中所示，如果所使用的基片是晶片，按照本发明的方法可以有利地用于仍然形成晶片一部分的包装元件。然而，该方法也可以以类似的方式应用在这些小晶片中，它们已经与晶片分离并且包括半导体结构和连接结构。
图2示出了用于基片1的覆盖层，它包括一玻璃层4和一塑料层5。玻璃层4具有在1到50μm区域内的厚度，该厚度对于密封或封装是足够的，而塑料层5较厚，以便为作为后续处理步骤的工件的晶片赋予更大的稳定性。
图3示出了晶片的更进一步处理。晶片在下侧是变薄的，以使能够按照本发明生产的元件具有变薄的基片，并且产生了腐蚀坑6，该腐蚀坑延伸远到连接结构3，该连接结构3作为蚀刻止挡。晶片下侧1b设有塑料平版，而连接结构3的区域仍然敞露。然后，在下侧产生线接触7，例如通过喷涂或溅射，结果是在腐蚀坑6的区域内产生了传导层7。然后，用于平版的塑料从晶片下侧1b被去除。接着，球状栅极阵列8被施加于传导层7上，并且晶片沿着平面9被分开。结果是其半导体结构2可靠地嵌入在覆盖层4和基片1之间的多个电子组件，以便它们可以被密封。
图4示出了一个相对于图3中所示实施例的变型。执行如上所述那些同样的工序，但是在晶片下侧1b上的塑料没有被去除并且作为钝化和保护层10来覆盖下侧。
图5示出了一实施例，其中汽相淀积的玻璃层11要被施加在基片的下侧1b上而不是塑料层10上。如在图3中所示的实施例，用于平版的塑料从晶片下侧1b上被去除，并且晶片的整个下侧1b被蒸发涂敷有玻璃，产生了一1到50μm厚的玻璃层11。
在图5中所示的玻璃层用作为保护或钝化层，如在图4中所示的塑料层10。
如在11b处所示，该玻璃层也覆盖线接触7的外向突出的那些部分。为了施加球状栅极阵列8，这些区域11b由于被接地和/或被腐蚀掉而暴露。然后如在图6中所示，施加球状栅极阵列，并且然后晶片被分割以便形成单个的组件，并且在9处标出。这些灵敏的半导体结构2在顶面和底面上由各自的玻璃层4和11保护。
在本发明的另一实施例中，晶片在分离面9上被分割，该分离面9不能穿过连接结构。其优点是，也能够确保用于组件的横向钝化保护。图7示出了分隔晶片的实例，它仅仅影响覆盖层4和基片1的材料。该过程开始与上述用于示例性实施例相同，亦即，晶片从下侧变薄并且产生的腐蚀坑6，它延伸远到连接结构3的下侧。晶片下侧1b被平版印刷(lithograph)，而连接结构的区域仍然是敞露的。在腐蚀坑6的区域内产生接触线7，而腐蚀坑也充满有导电材料12。在该上下文中，通过使用Ni(P)电镀来变厚是可以考虑的。可按照本发明的这个实施例生产的元件相应地具有穿过基片的贯穿接触。
至少在接触7的区域内，在塑料已经从晶片下侧被去除后，施加球状栅极阵列8。接下来沿着平面9分割晶片。结果是带有密封的半导体结构2的电子组件，而取决于所采用的过程存在或不存在一层类似的塑料层10。
图8和9示出了包括在底面上产生玻璃层11的示例性实施例。该过程与在图5连同图7中所示的实施例类似，亦即，在连接结构下面产生已填充的区域，并且晶片的整个下侧1b涂有玻璃层11，该玻璃层在已填充的腐蚀坑6区域内被去除，以便将球状栅极阵列应用在其上，如在图9中所示。在晶片已经沿着平面9被分割之后，得到了带有封装的半导体结构2的组件。
层4或11的玻璃系统应该形成至少二元系统。优选为多元件系统。
具有下面成分(百分比重量)的汽相淀积玻璃，已经证明是特别适合的：
成分                    重量百分比
SiO2                    75-85
B2O3                   10-15
Na2O                    1-5
Li2O                    0.1-1
K2O                     0.1-1
Al2O3                  1-5
这种类型的优选汽相淀积玻璃是由Schott生产的8329玻璃，具有下面的成分：
SiO2                    84.1％
B2O3                   11.0％
Na2O                    ≈2.0％]
Li2O                    ≈0.3％}2.3％(在层中？3.3％)
K2O                     ≈0.3％]
Al2O3                  ≈2.6％(在层中＜0.5％)
在括号中所给出的数值表示在汽相淀积层中各自元件的重量比。
电阻接近1010Ω/cm(在100℃)，
折射率接近1.470，
介电常数ε接近4.7(在25℃，1MHz)，
并且tgδ接近45×10-4(在25℃，1MHz)。
另一组适合的汽相淀积玻璃具有下面的成分，重量百分比为：
成分                    重量百分比
SiO2                    65-75
B2O3                   20-30
Na2O                    0.1-1
Li2O                    0.1-1
K2O                     0.5-5
Al2O3                    0.5-5
该组中优选的汽相淀积玻璃是由Schott生产的G018-189玻璃，具有下面的成分：
成分                     重量百分比
SiO2                     71
B2O3                    26
Na2O                     0.5
Li2O                     0.5
K2O                      1.0
Al2O3                   1.0
优选使用的玻璃8329和G018-189尤其具有在下面表格中列出的特性：
特性    8329     G018-189
α20-300〔10-6K-1〕    2.75     3.2
密度(g/cm3)    2.201     2.12
转变点〔℃〕    562     742
折射率nd    1.469     1.465
按照ISO 719水解阻抗等级    1     2
按照DIN 12 116耐酸性等级    1     2
按照DIN 52322抗碱性等级    2     3
介电常数ε(25℃)    4.7(1MHz)     3.9(40GHz)
tgδ(25℃)    45*10-4(1MHz)     26*10-4(40GHz)
为了在组件中产生特殊的性质，对于在顶面和底面上的玻璃层可以有利地使用不同成分的玻璃。对于具有不同特性例如关于折射率、密度、E模量、努氏硬度、介电常数、tgδ的多种玻璃，也可以连续地沉积在基片上。作为对电子束沉积的替换，也可以使用其它方式，用于传送在玻璃形成中沉积的材料。例如，蒸发涂敷的材料可以在坩埚中，该坩埚通过电子冲击加热而被加热。这种类型的电子冲击加热基于加速到坩埚上的热离子放电，以便冲击待蒸发的材料而具有预定的能。，这些过程同样也能够产生玻璃层，而在玻璃沉积所在的基片上没有过量的热负荷。
下文给出对由玻璃8329形成的汽相淀积玻璃层进行的各种测试的结果。
图11示出了TOF-SIMS测量的结果，其中计算速度是作为溅射时间函数的曲线。测量值描绘了在垂直于基片表面的方向上元件集中的曲线图。测定小于层厚1％的玻璃框架的厚度恒定性。
图12示出了涂覆有汽相淀积玻璃8329的硅片的电子显微镜横向显微磨片图像。汽相淀积玻璃和硅片表面可靠地以一种方式彼此粘结，它甚至通过包含在准备试样中的横向显微磨片操作也没有被松开。
此外，按照DIN/ISO，对由汽相淀积玻璃8329形成的汽相淀积玻璃层进行电阻和稳定性测定。结果在表格1中给出。
                      试样标号：8329
水DIN ISO719等级   HCL耗量〔ml/g〕     Na2O 当量〔μg/g〕 说明
HGB 1酸DIN 12116等级   0.011材料去除〔mg/dm2〕     3总的表面积〔cm2〕 无说明/显著的变化
1W碱DIN ISO 695等级   0.4材料去除〔mg/dm2〕     2×40总的表面积〔cm2〕 无变化的说明/显著的变化
A2作为材料   122     2×14 无变化

Claims (33)

1.一种用于形成电子组件，特别是传感器、集成电路以及光电元件外壳的方法，包括以下步骤：
-设置一个基片(1)，它的至少一个基片第一侧面(1a)要被封装，
-设置一个汽相淀积玻璃源(20)，
-以这种方式相对于汽相淀积玻璃源设置基片第一侧面(1a)，使基片第一侧面(1a)可以被蒸发涂敷；
-将基片第一侧面蒸发涂敷上一玻璃层(4)。
2.如权利要求1所述的方法，其特征在于，所设置的基片具有一个或多个区域，这些区域包括半导体结构(2)并且包括连接结构或用于形成半导体结构(2)和连接结构(3)。
3.如权利要求2所述的方法，其特征在于，所述具有半导体结构(2)的一个或多个区域设置在基片第一侧面(1a)上。
4.如权利要求3所述的方法，其特征在于，基片在一第二侧面(1b)上设有一钝化层(10，11)，该第二侧面在与第一侧面(1a)相对的那侧。
5.如上述权利要求之一所述的方法，所述基片包括一晶片，其特征在于，所述方法包括封装仍然形成晶片一部分的元件。
6.如上述权利要求之一所述的方法，其特征在于，所述基片(1)在两个侧面(1a，1b)上蒸发涂敷上一玻璃层(4，10，11)。
7.如上述权利要求之一所述的方法，其特征在于，设置一个产生至少一个二元玻璃系统的汽相淀积玻璃源(20)。
8.如上述权利要求之一所述的方法，其特征在于，操作汽相淀积玻璃源，直到玻璃层(4)具有在0.01到1000μm区域内的厚度为止，特别是在基片第一侧面上。
9.如上述权利要求之一所述的方法，其特征在于，作为设置汽相淀积玻璃源(20)的步骤一部分，设置一个包括有机成分的容器，并且这些有机成分通过施加真空或加热被转换为蒸汽状态，以便在蒸发涂敷期间，能够在基片侧面上形成包括无机和有机成分的混合层。
10.如上述权利要求之一所述的方法，其特征在于，玻璃层厚度在0.1和50μm之间的范围内。
11.如上述权利要求之一所述的方法，其特征在于，玻璃层厚度在50和200μm之间的范围内。
12.如上述权利要求之一所述的方法，其特征在于，汽相淀积玻璃源(20)通过电子束(24)从玻璃靶(23)中产生。
13.如上述权利要求之一所述的方法，其特征在于，所使用的汽相淀积玻璃是一种含有氧化铝和碱金属氧化物部分的硼硅玻璃。
14.如上述权利要求之一所述的方法，其特征在于，汽相淀积玻璃具有与基片热膨胀系数实际上相等的热膨胀系数。
15.如上述权利要求之一所述的方法，其特征在于，玻璃层(4)产生具有密封所需要的厚度，并且一塑料层(5)施加在上述玻璃层(4)之上，以方便进一步处理基片(1)。
16.如上述权利要求之一所述的方法，其特征在于，许多玻璃层被汽相淀积到基片(1)上，对于各玻璃层可以由各种玻璃成分组成。
17.如上述权利要求之一所述的方法，其特征在于，基片(1)的进一步处理包括从一个基片第而侧面(1b)上去除材料，该基片第而侧面位于与基片第一侧面(1a)相反的侧面。
18.如上述权利要求之一所述的方法，其特征在于，基片(1)包括一个具有多个半导体结构(2)和连接结构(3)的晶片，而基片第而侧面(1b)被变薄，它在与基片第一侧面(1a)相反的侧面；在待产生的连接结构区域内在基片第而侧面(1b)上蚀刻出腐蚀坑(6)；用于形成半导体结构(2)的区域被使用塑料层来平版印刷；在具有连接结构(3)的区域内在基片第而侧面(1b)上生产线接触(7)；从基片第而侧面(1b)上去除塑料；在线接触(7)处施加一球状栅极阵列(8)；以及分割晶片以便形成多个备具有第一封装侧面(1a)的电子组件。
19.如权利要求18所述的方法，其特征在于，基片第而侧面(1b)设有一塑料覆盖层(10)而使球状栅极区域(8)是透明的。
20.如权利要求18或19所述的方法，其特征在于，在已经从基片第而侧面(1b)上去除塑料之后，整个基片第而侧面蒸发涂敷上一玻璃层(11)，并且线接触(7)通过局部除去玻璃层(11)而敞露，在其后进行施加球状栅极阵列(8)和分割晶片的步骤，以便得到在两侧面上都封装的电子组件。
21.如权利要求20所述的方法，其特征在于，整个基片第而侧面都蒸发涂敷有一厚度在1到500μm范围内的玻璃层(11)。
22.如权利要求18到21之一所述的方法，其特征在于，导致连接结构(3)的腐蚀坑(6)填充有导电材料(12)，在其后，从基片第而侧面(1b)上去除或不去除塑料以及在基片第而侧面(1b)上带有或不带玻璃层(11)，并且使线接触(7)是透明的，球状栅极阵列(8)被施加在线接触(7)上和/或在填充材料上。
23.如上述权利要求之一所述的方法，其特征在于，将基片第一侧面(1a)蒸发涂敷上一玻璃层(4)包括等离子区源离子辅助沉积(PIAD)。
24.一种电子组件，特别是作为传感器或作为集成电路或作为光电元件，可通过上述权利要求之一所述的方法生产。
25.如权利要求24所述的电子组件，它在第一侧面(1a)上具有一个或多个带有半导体结构(2)和连接结构(3)的半导体结构，其中，在至少一个侧面上涂有一汽相淀积玻璃层(4)。
26.如权利要求25所述的电子组件，其特征在于，一加强组件的塑料层(5)被施加于玻璃层(4)上。
27.如权利要求25或26之一所述的电子组件，其特征在于，基片是变薄的。
28.如权利要求25到27之一所述的电子组件，其特征在于，基片在第二侧面(1b)上设有一钝化层(10，11)，它位于与具有半导体结构和连接结构的第一侧面(1a)相反的侧面上。
29.如权利要求25到28之一所述的电子组件，其特征在于，玻璃层(4)包括一无机和有机成分的混合层。
30.如权利要求25到29之一所述的电子组件，其特征在于，它包括一多层玻璃层(4)。
31.如权利要求30所述的电子组件，其特征在于，玻璃层的各层具有不同的成分。
32.如权利要求25到31之一所述的电子组件，其特征在于，基片(1)在第二侧面(1b)上具有线接触，这些线接触与第一侧面(1a)上的连接结构相连。
33.如权利要求32所述的电子组件，它包括一在线接触处的球状栅极阵列(8)。
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