CN1636278A - 由光敏和/或x－射线敏传感器组成的传感器设备 - Google Patents

由光敏和/或x－射线敏传感器组成的传感器设备 Download PDF

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CN1636278A
CN1636278A CNA02816959XA CN02816959A CN1636278A CN 1636278 A CN1636278 A CN 1636278A CN A02816959X A CNA02816959X A CN A02816959XA CN 02816959 A CN02816959 A CN 02816959A CN 1636278 A CN1636278 A CN 1636278A
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CN100431150C (zh
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A·纳斯塞蒂
M·奥维迪克
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Koninklijke Philips NV
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Abstract

本发明涉及一种大面积传感器设备，特别是一个平板状动态X－射线检测器(FDXD)。在一个基片(1)上按平面分布配置该传感器设备的光敏和/或X－射线敏传感器(像素)，由此形成一个敏感层(20)。在该层(20)的上面表面上备有用于每个传感器的接触点(23)，该接触点通过一个或多个连接层(30，40)连接到一个集成电路(6)。由此得到一个多层的非常紧凑的结构，其中按平面式样并且平行于传感器配置该电子估算电路(6)。最好，在该电路(6)中的各个估算电路与每个传感器相关，由此导致很短的路径同时还减小了噪声。

Description

由光敏和/或X-射线敏传感器组成的传感器设备
本发明涉及一种传感器设备，包括一层按分布式样配置的光敏和/或X-射线敏传感器。
特别对于动态再现医学领域中X-射线图像使用备有两维，大面积层光敏和/或X-射线敏传感器的传感器设备。该类型的大面积X-射线传感器还被称为“平板状动态X-射线检测器”(FDXD)。FDXD式的检测器是能在多种应用-特别X-射线设备中应用的通用检测器部件。这些应用一点也不包括使用计算机的X线断层摄影术和核医学。
例如，从EP 0 440 282 B1了解到一种FDXD X-射线检测器。该已知的X-射线检测器乃是基于薄膜技术，其中电流是通过在一个基片上沉积薄层形成的。与EP 0 440 282 B1一致这里形成一种矩阵配置，其由简短地导通一个电流的光敏二极管组成，因为吸收光子，和能选择性地耦合该各个光敏二极管到读出引线的薄膜晶体管。使用无定形的硅作为半导体材料。由此得到的该设备构成通过在该光敏二极管上沉积一附加的闪烁剂层能对X-射线提供灵敏的大面积光传感器。然后该闪烁剂层将吸收X-射线量子并将该量子转换成可以由该光敏二极管检测的光量子。
还已知直接将X-射线转换到电信号的设备。例如，DE 40 02 429A1描述用该薄膜技术制造的一个传感器矩阵，其中使用在一个薄膜平板上的储存电容替代光敏二极管和使用直接转换材料替代该闪烁剂层。
在所有已知的FDXD类型的传感器中，例如，如CMOS电路这样的集成电路连接到该大面积薄膜电子设备的边缘，所说电路用于行方向驱动该矩阵单元和列方向放大和采集来自该矩阵单元的信号。其缺陷在于行方面读出该矩阵期间所谓的“转换噪声”，以及在各个传感器和该电路之间的长连接引线将引起比较高的噪声电平。
考虑到上述情况，本发明的一个目的在于提供一种改进的传感器设备，它包括光敏和/或X-射线敏传感器的一个大面积阵列和包含较小的信号噪声。
该目标借助权利要求1中描述的一种传感器设备实现。在该从属权利要求中描述了有利的实施例。
该推荐的传感器设备包括一层两维分布的光敏和/或X-射线敏传感器，每个包括至少一个接触点。此外在该传感器层上平行配置至少一个部件，其具有的一个集成电路最好借助半导体技术形成。该部件连接到所说接触点并被配置来读出该传感器信号。该传感器设备最好是一个大面积的设备，这意味着它一般包括数千个单独的传感器和占有的尺寸从若干平方厘米到数百平方厘米数量级的一个表面面积。在该传感器上形成的接触点最好部位于该两维传感器设备的一侧上，即使并不绝对必要。此外，在该传感器层和该集成电路之间提供至少一个连接层，其包括将该集成电路连接到该传感器的接触点和/或到外部端点的电引线。该外部端点特别地可以是电压端。
该推荐的传感器设备具有实质上两层结构，包含光敏和/或X-射线敏传感器的第一层而平行于该第一层延伸的第二层包括具有该集成电路的部件。以下为简化起见将也称该具有集成电路的部件为“集成电路”。由于描述两层结构，从该单个传感器元件到该读出电子电路的连接不必横跨该整个表面远至边缘路由选择，而可以垂直于传感器元件层延伸，即，沿最短路径到相邻该传感器和向那里平行延伸的的集成电路。该类型的设备提供短连接路径的优点，由此降低在信号中的噪声。此外，还有可能提供每个传感器具有其自身的“像素电子电路”。
根据几何观点，该电路还有能使包括该集成电路的该大面积传感器的结构很紧凑的优点。由于整个表面积现在是可利用的并且不只是该传感器的边缘，因此现在可使用比目前技术状态所允许的更多的集成电路，即使在另一方面不需要用集成电路充满该整个表面。
由于一个或多个连接层，可用合适的连接距离连接该传感器到该集成电路。因此，在该传感器上集成电路接线端无需几何上准确地设置，但同时仍然保持短引线路径的优点。此外，使用多个连接层，在安装期间可保持施加的关于对准精度的要求于适中的限度之内，对于所使用的连接技术，例如，块形连接(bump bond)技术将是如此。
该传感器设备的集成电路最好借助CMOS技术形成。这是建立的并经受时间考验的半导体技术，其允许用小电源电压进行工作。
该连接层可包括至少一个电绝缘层，经其处一种导电材料延伸通过。该绝缘层提供该电引线和该传感器层的表面的电分离，由此提供关于路由这些引线的更多的自由度。
最好，该连接层永久连接到该传感器层。这可以特别地通过在传感器和它们的接触点上直接沉积连接层来实现，使得在一个大面积上连接层和传感器层彼此接触并且通过材料保持力彼此相连接。
在推荐的传感器设备中的相邻传感器的接触点之间的距离与同该接触点相关的集成电路的接线端之间的距离可以是不同的。该接触点可特别地设置在这样一个距离上，即比该集成电路的相关接线端之间的距离更大。在该情况下由该连接层提供还可认为是“扇入”或“扇出”的不同距离的自适应性。这样的自适应性的可能性使得最佳选择在一侧上的接触点之间的距离和在另一侧上的接线端之间的距离成为可能，即最佳选择关于传感器或该集成电路成为可能。特别地例如借助CMOS技术形成的该集成的电路可以减少以使尺寸最小。
最好借助薄膜技术在一个基片上形成光敏和或者还可能X-射线敏传感器。该连接层也可有利地借助该薄膜技术形成。按照从技术状态了解的该薄膜技术，通过蒸发沉积或除尘，同时应用掩模沉积形成电阻，电容，导体迹线等的材料。此外，可执行例如蚀刻这样的附加处理步骤。由于在如此大面积处理中传感器像素矩阵的形成，该接触点具有适当的机械精度。由此，精确地确定了该像素的位置，这对正确成像是重要的。
按本发明的该传感器设备的形成能获得对整个设备的高生产率，这是因为一方面该大面积的传感器层结构很简单和粗糙，另一方面该集成电路具有普通尺度并能提前试验。只要要求，这样的集成电路还可以单独地被替换，假定它们呈现故障的话，借助标准方法(例如，块形连接技术)能执行在该连接层上安装该集成电路，使得这也是相对不苛刻的。
特别地该传感器可以是对X-射线敏感的，而由此由将X-射线直接转换成电信号的材料所组成。这些材料可以是例如锗(Ge)、硒(Se)，砷化镓(GaAS)，碲化镉(CdTe)，镉锌碲化物，氧化铅(PbO)，碘化铅(PbI2)和/或碘化汞(HgI2)。直接转换的传感器提供的优点在于避免如由附加转换步骤引起的信号错误和噪声。
作为选择，该传感器还可以是对X-射线敏感的并且具有两层结构：X-射线灵敏闪烁层和光灵敏感光层。在该类型的传感器中，X-射线量子在该闪烁层中被转换而形成光量子，其后该光量子能在该光敏感光层中进行检测。
在近来的结构中该传感器特别可包括光敏二极管于该光敏感光层中，该二极管有利地是无定形硅(Si)光敏二极管。
在该传感器设备中贯穿该层形成的传感器的分布最好是如栅格形状的，即与一个有规则的同期的模式一致。特别地该设备可以是一个六边形栅格和/或矩阵，即具有行和列的一个矩形栅格。准确地该栅格被分成许多单元，一个集成电路与所说单元的每一个相关。一般地数千大量的单个传感器被分成更小的传感器组，其设置在相应的公共单元中，接着这样的一个单元的所有传感器连接到相同的集成电路。该整个传感器层的这样一种模块式的分解提供的优点在于该集成电路的表面面积可以比由该相关传感器所占据的表面面积更小，同时仍保持短的连接路径，这是因为如此呈现的该传感器的剩余表面面积贯穿整个传感器设备是均匀分布的(以栅格形式)。此外，该类型的传感器设备对故障表现出更好的保护能力，因为一个集成电路的故障只能与一个该栅格设备的单元相关而不是整个格栅。如果必要的话，也可取代单个集成电路用于纠错。
在最近的栅格式传感器设备中，在一个单元中最好配置接近在1000(一千)和接近100,000(十万)之间的单个传感器，而在10000(一万)和100,000(十万)之间为更好，所有所说传感器与一个单独的集成电路相关。对于这样的数量，在尽可能少地分布集成电路中的读出电子电路和需要尽可短的连接路径之间达到最佳折衷。
与一个优选的传感器设备实施例相一致，相应的读出电子电路与每个传感器相关。所说的读出电子电路可形成包括多个用于若干传感器的这样的读出电子电路的一个集成电路的部分。由于直接连接每个传感器到该相关的集成读出电子电路，所以该传感器不再需要用行或列地址编址。由这种寻址操作引起的转换噪声由此而被消除。每个传感器直接和永久连接到一个相关的读出电子电路的进一步的优点在于读出速度高于由编址读出所达到的速度。此外，对于每个传感器(像素)，可存在相关的一个相应的读出放大器用于每个传感器，该读出放大器具有一个相应的前置放大器，使得例如能量检测，计算，事件-控制读出，剂量检测，帧传递等复杂的信号处理能够进行。
本发明还涉及一种成像设备，其特征在于它包括所陈述类型的传感器设备。该设备特别地可以是一种X-射线检查设备，计算的X线断层摄影术设备和/或核医学检查设备。
以下将参照附图用例子详细描述本发明。其中：
图1是按本发明的包括一个连接层的一种传感器设备的层式结构的概略表示；
图2概略表示按本发明的包括两个连接层的一种传感器设备的层式结构；
图3是按本发明的包括是以单元分布的矩阵式的16个集成电路的一种传感器设备的平面图。
图1是按本发明的第一传感器设备一部分的概略的侧纵剖图。该例涉及能特别用于医学应用的一个大面积X-射线检测器。
该整个传感器设备建立在例如玻璃的基片1上。该传感器设备的结构在实际上是具有彼此配置在该基片1上面并平行于该基片1延伸的三个不同层的三层结构。该第一层20是信号产生层，它吸收输入光子(从图1下面输入)，这些输入光子被转换成例如充电信号(chargesignal)的电信号。该连接层30配置在该信号产生层20上，建立在该层20中各个传感器(像素)和一个电子估算电路之间的电连接。该估算电路形成第三层并且由配置在该连接层30上的并与该连接层30相接触的集成电路的“两维”CMOS部件6组成。
该信号产生层20本身具有三层结构；在该底部以及与该基片1接触处形成一个平板后部接触21，它特别用作接收一个给定的外部施加电位的电极。该光敏和/或X-射线敏结构22配置在该后部接触层21上并与其相接触。该类型的层结构原理上是已知的，并在例如DE 40 02429 A1或DE 42 27 096 A1中加以描述。层22可特别地由直接地转换的材料组成，例如Se，PbO，PbI2，等等。作为选择，该传感器层22可以由光敏二极管组成，例如由无定形硅制成的PIN光敏二极管。在该情况下整个结构(除集成电路6外)可由借助于普通的Si薄膜处理制造。
按在光敏和/或X-射线敏层22上的一个矩阵式栅格的形式提供像素接触点23。这些接触点是一种导电材料，特别是金属的平面基元。单个光敏和/或X-射线敏传感器(像素)的信号可从该相应的像素接触头23导出。
该连接层30直接提供在该光敏和/或X-射线敏层22上并借助钝化作用层31灌封该像素接触点23。接触相应的像素接触点23并在该钝化作用层31表面上形成接触点的像素连接件32通过该钝化作用层31延伸。在该钝化作用层31的表面上提供有附加的连接引线33，其例如从集成电路到该传感器设备的边缘延伸，在那里它们可以连接到电源。
最后，在该连接层30上向该层提供集成电路(IC)6。通过可以是铟块形连接(indium bump bond)的一种接触材料5，各个集成电路6电连接到该像素连接件32或其他连接引线33。
配置该大面积信号发生层20，该连接层30以及在其上提供的集成电路产生了一个结构非常紧凑的大面积传感器。与现有技术状态相反，由于能容纳所有大量的电路，所以不仅仅围绕该传感器的边缘可利用用于该目的。在该像素接触点23下面的各个像素最好直接和永久性地连接到相应的相关电路，特别是在该集成电路6中的相关的前置放大器。该像素电子电路的噪声由此急剧减小(转换噪声和长连接都将消除)。此外，可实施智能像素电子电路，包括具有能量检测，计算，事件控制读出，剂量检测，帧传递等的信号处理。
图2表示另一种结构的传感器设备。该结构与图1的不同点在于还有一个连接层40配置在第一连接层30上。集成电路6提供在所说连接层40上。由此所表征的标号和要素相应于图1，而第二连接层40包括类似于第一连接层30，钝化作用层41，像素连接件42和在其表面上的附加的连接引线43。连接层之一可包括电源电压引线，和到/来自集成电路的其他引线以及例如可连接到在该传感器设备边缘的连接垫。如在图中所示的，除第一连接层30之外，可使用第二连接层40将矩阵式分布的像素接触点2 3变换到不相同的但最好是空间密集(denser)分布的像素连接件42(扇入)。这样的一种密集模式的像素连接件42由此适用由集成电路6接触。此外，在第二连接层40中可提供进一步的电连接，使得存在更多的关于路由连接的自由度。
可借助已知的技术实现图1和图2中表示的传感器设备，即，一方面如由薄膜技术得知的层20和连接层30和40的大面积生产，而另一方面借助于习惯上用于集成电路的已知连接技术，特别地如所谓的块形连接技术。
图3是一个完整的传感器设备的平面图，即同时看到该集成电路6采用的一个图。该图表示该光敏和/或X-射线敏层20由各个传感器组成，在其上提供具有像素连接件的连接层32。该像素连接件32再引导到集成电路(IC)6和将这些电路连接到该各个传感器基元。此外，在连接层表面上提供从该IC 6引导到外部接线端供电源电压用的连接引线43。
如在图3中还能看见的，在矩阵式设备中整个灵敏表面20由传感器或像素占有，在所示该例中整个表面上的传感器像素的数目总计512×512个。像素间距总计200μm(术语间距理解为相似结构再现的距离)和有源表面的尺寸约为10×10cm2。该512×512个传感器像素的矩阵被(逻辑地)细分为16个子矩阵或单元，中心地配置在该单元上的一个集成电路6准确地与每个单元相关。每个集成电路6的像素沟道数由此总计为128×128，而连接间距总计为例如为80μm(＝在该IC中的像素间距)。
该集成电路6的表面区域最好借助CMOS技术形成，比该传感器的有源表面区域小。在本实施例中IC 6的表面面积与传感器有源表面面积之比总计为802/2002＝0.16(在附加连接等情况下接近20％)。对于给定的单元的几何尺寸，对于具有例如2048×2048像素的更大的传感器表面面积而言该系数也保持不变。

Claims (11)

1.一种传感器设备，包括一层光敏和/或X-射线敏传感器，这些传感器按分布方式配置，每个包括至少一个接触点，其中至少一个具有一个集成电路的部件配置在该传感器层上并与其平行，所说集成电路连接到该接触点并配置来读出该传感器信号，以及其中至少一个具有电引线的连接层提供在该传感器层和所说部件之间，所说连接层将该集成电路连接到该传感器的接触点和/或外部接线端。
2.如权利要求1的传感器设备，其特征在于该连接层包括至少一个电绝缘层，经其处一种导电材料延伸通过。
3.如权利要求1的传感器设备，其特征在于该连接层永久性地连接到该传感器层。
4.如权利要求1的传感器设备，其特征在于在该传感器的接触点之间的距离不相同，并最好大于该集成电路相关引线端之间的距离。
5.如权利要求1的传感器设备，其特征在于光敏和/或X-射线敏传感器和/或连接层借助薄膜技术制造。
6.如权利要求1的传感器设备，其特征在于该传感器由将X-射线直接转换到电信号的材料组成，最好是Ge，(无定形的)Se，GaAs，CdTe，CdZnTe，PbO，PbI2和/或HgI2。
7.如权利要求1的传感器设备，其特征在于传感器具有两层结构包括对X-射线灵敏的闪烁层，和对光敏感的感光层。
8.如权利要求7的传感器设备，其特征在于传感器包括光敏二极管作为光敏感光层。
9.如权利要求1的传感器设备，其特征在于该传感器按栅格配置，其被细分成单元，具有一个集成电路的一个部件准确地与每个单元相关。
10.如权利要求1的传感器设备，其特征在于在该集成电路中每个传感器与相应的读出电子电路相关，该读出电子电路最好包括相应的前置放大器供每个传感器用。
11.一种成像设备，特别是一种成像X-射线检查设备，一种计算X-线断层摄影术设备或一种核医学检查设备，其特征在于它包括如权利要求1中所要求的一种传感器设备。
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102193102A (zh) * 2010-03-16 2011-09-21 株式会社东芝 放射线检测装置、放射线检测装置的制造方法及图像摄影装置
CN102544032A (zh) * 2010-12-10 2012-07-04 三星电子株式会社 晶片规模x射线检测器及其制造方法
CN103135121A (zh) * 2011-11-28 2013-06-05 Ge医疗系统环球技术有限公司 用于消除串扰的线段形模块ct探测器和方法
CN105266835A (zh) * 2014-07-25 2016-01-27 Ge医疗系统环球技术有限公司 一种ct探测器
CN105280659A (zh) * 2014-07-15 2016-01-27 西门子股份公司 用于电磁射线的成像装置
CN107004687A (zh) * 2014-11-20 2017-08-01 皇家飞利浦有限公司 辐射探测器芯组件
CN107949912A (zh) * 2015-08-28 2018-04-20 西门子医疗有限公司 具有优化电容的不透光焊盘结构的x射线检测器
CN109891589A (zh) * 2016-10-27 2019-06-14 株式会社理学 检测器
CN110058291A (zh) * 2018-01-19 2019-07-26 西门子医疗有限公司 用于生产x射线探测器的组装方法、x射线探测器和x射线设备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236376A1 (de) * 2002-08-02 2004-02-26 Infineon Technologies Ag Träger für optoelektronische Bauelemente sowie optische Sendeeinrichtung und optische Empfangseinrichtung
WO2004105137A1 (ja) 2003-05-23 2004-12-02 Hamamatsu Photonics K.K. 光検出装置
JP5070637B2 (ja) * 2005-12-07 2012-11-14 株式会社アクロラド 放射線画像検出モジュール
US8710448B2 (en) * 2006-03-30 2014-04-29 Koninklijke Philips N.V. Radiation detector array
DE102006033716A1 (de) * 2006-07-20 2008-02-14 Siemens Ag Röntgendiagnostikeinrichtung mit einem digitalen Röntgendetektor und integrierter Dosismessung
DE102008012604B4 (de) * 2008-03-05 2017-10-12 Siemens Healthcare Gmbh Detektormodul, Röntgendetektor und Verfahren zum Aufbau eines Röntgendetektors
JP2010245077A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置、光電変換装置の製造方法
WO2011073819A2 (en) * 2009-12-15 2011-06-23 Koninklijke Philips Electronics N.V. Radiation dose based imaging detector tile parameter compensation
KR101634250B1 (ko) 2010-06-21 2016-06-28 삼성전자주식회사 대면적 엑스선 검출기 및 제조방법
KR101761817B1 (ko) * 2011-03-04 2017-07-26 삼성전자주식회사 대면적 엑스선 검출기
US9917127B2 (en) 2014-06-25 2018-03-13 Agency For Science, Technology And Research Pixel arrangement
JP6528376B2 (ja) * 2014-08-27 2019-06-12 富士通株式会社 撮像装置及びその製造方法
JP6608185B2 (ja) * 2015-06-18 2019-11-20 キヤノン株式会社 積層型イメージセンサおよび撮像装置
US11194063B2 (en) * 2019-12-30 2021-12-07 Rayence Co., Ltd. X-ray detector having driver micro integrated chips printed on photodiode layer
DE102020202411A1 (de) 2020-02-25 2021-08-26 Siemens Healthcare Gmbh Verfahren, Trägerrahmen und Fügesatz zum Verbinden von Halbleiterdetektorelementen mit elektronischen Bauelementen

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039833A (en) * 1976-08-17 1977-08-02 The United States Of America As Represented By The Secretary Of The Navy High density infrared detector array
FR2639784B1 (fr) * 1988-11-29 1991-01-11 Commissariat Energie Atomique Structure monolithique de detection ou d'imagerie infrarouge et son procede de fabrication
DE4002429A1 (de) 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
DE4002431A1 (de) * 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
FR2693033B1 (fr) * 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
FR2718571B1 (fr) * 1994-04-08 1996-05-15 Thomson Csf Composant hybride semiconducteur.
EP0854644A3 (en) * 1994-06-01 1999-02-10 Simage Oy Imaging devices, systems and methods
US5892227A (en) * 1994-09-29 1999-04-06 Yissum Research Development Company Of The Hebrew University Of Jerusalem Radiation detection system and processes for preparing the same
BR9510290A (pt) * 1994-12-23 1997-11-11 Digirad Câmera de raios gama semicondutores e sistema médico de formação de imagens
JPH09213744A (ja) * 1996-02-07 1997-08-15 Toshiba Microelectron Corp 半導体装置及びその製造方法
JP3940804B2 (ja) * 1997-09-04 2007-07-04 株式会社ニコン ハイブリッド型半導体装置及びその製造方法
US5998794A (en) * 1997-10-08 1999-12-07 Thermotrex Corporation Prevention of photoelectric conversion layer contamination in an imaging device
WO1999039395A1 (en) * 1998-02-02 1999-08-05 Uniax Corporation Organic diodes with switchable photosensitivity
JP3287346B2 (ja) * 1999-11-29 2002-06-04 カシオ計算機株式会社 半導体装置
WO2002006853A1 (en) * 2000-03-31 2002-01-24 Koninklijke Philips Electronics N.V. Fdxd-detector for measuring dose
US6483116B1 (en) * 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
US6552343B1 (en) * 2000-05-18 2003-04-22 Telasic Communications, Inc. Unit cell with fan-out for large focal plane arrays with small detector pitch
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same

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Publication number Priority date Publication date Assignee Title
US8912499B2 (en) 2010-03-16 2014-12-16 Kabushiki Kaisha Toshiba Radioactive ray detecting apparatus, method of manufacturing the same, and imaging system
CN102193102A (zh) * 2010-03-16 2011-09-21 株式会社东芝 放射线检测装置、放射线检测装置的制造方法及图像摄影装置
CN102544032A (zh) * 2010-12-10 2012-07-04 三星电子株式会社 晶片规模x射线检测器及其制造方法
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US9966409B2 (en) 2014-07-15 2018-05-08 Siemens Aktiengesellschaft Imaging device for electromagnetic radiation
CN105280659A (zh) * 2014-07-15 2016-01-27 西门子股份公司 用于电磁射线的成像装置
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CN107949912B (zh) * 2015-08-28 2019-06-28 西门子医疗有限公司 具有优化电容的不透光焊盘结构的x射线检测器
CN109891589A (zh) * 2016-10-27 2019-06-14 株式会社理学 检测器
US11049897B2 (en) 2016-10-27 2021-06-29 Rigaku Corporation Detector
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CN110058291A (zh) * 2018-01-19 2019-07-26 西门子医疗有限公司 用于生产x射线探测器的组装方法、x射线探测器和x射线设备
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JP4147186B2 (ja) 2008-09-10
CN100431150C (zh) 2008-11-05
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