CN1624806B - 存储器中开机顺序之参考电压检测器 - Google Patents
存储器中开机顺序之参考电压检测器 Download PDFInfo
- Publication number
- CN1624806B CN1624806B CN2004100748803A CN200410074880A CN1624806B CN 1624806 B CN1624806 B CN 1624806B CN 2004100748803 A CN2004100748803 A CN 2004100748803A CN 200410074880 A CN200410074880 A CN 200410074880A CN 1624806 B CN1624806 B CN 1624806B
- Authority
- CN
- China
- Prior art keywords
- coupled
- terminal
- transistor
- input
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/125—Discriminating pulses
- H03K5/1252—Suppression or limitation of noise or interference
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Manipulation Of Pulses (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/651281 | 2003-08-28 | ||
US10/651,281 US6956409B2 (en) | 2003-08-28 | 2003-08-28 | Reference voltage detector for power-on sequence in a memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1624806A CN1624806A (zh) | 2005-06-08 |
CN1624806B true CN1624806B (zh) | 2011-02-09 |
Family
ID=34217358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100748803A Expired - Fee Related CN1624806B (zh) | 2003-08-28 | 2004-08-30 | 存储器中开机顺序之参考电压检测器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6956409B2 (zh) |
CN (1) | CN1624806B (zh) |
DE (1) | DE102004040507B4 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080061842A1 (en) * | 2006-09-07 | 2008-03-13 | Micron Technology, Inc. | Circuit and method for detecting timed amplitude reduction of a signal relative to a threshold voltage |
CN100464501C (zh) * | 2006-09-12 | 2009-02-25 | 北京中星微电子有限公司 | 一种去除信号中毛刺的方法及其装置 |
US7560959B2 (en) * | 2006-09-18 | 2009-07-14 | Micron Technology, Inc. | Absolute value peak differential voltage detector circuit and method |
CN106205735A (zh) * | 2015-04-29 | 2016-12-07 | 中芯国际集成电路制造(上海)有限公司 | 嵌入式芯片测试方法及系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1054850A (zh) * | 1989-12-28 | 1991-09-25 | 德克萨斯仪器公司 | 有延滞的低功率、ttl电平cmos输入缓冲器 |
US5852580A (en) * | 1996-12-28 | 1998-12-22 | Hyundai Electronics Industries Co., Ltd. | Repair fuse circuit in a flash memory device |
US5856941A (en) * | 1997-09-15 | 1999-01-05 | Delco Electronics Corporation | One-time programmable latch which allows volatile writes prior to permanent programming |
US5864247A (en) * | 1995-08-21 | 1999-01-26 | Matsushita Electronics Corporation | Voltage detection circuit, power-on/off reset circuit, and semiconductor device |
US6198318B1 (en) * | 1999-01-28 | 2001-03-06 | Legerity, Inc. | Power-on-reset circuit |
US6577166B2 (en) * | 2000-10-19 | 2003-06-10 | Samsung Electronics Co., Ltd. | Voltage level detector and voltage generator using the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4767947A (en) * | 1983-08-31 | 1988-08-30 | Texas Instruments Incorporated | Constant pulse width generator |
JP2563215B2 (ja) * | 1990-06-20 | 1996-12-11 | セイコー電子工業株式会社 | 半導体集積回路装置 |
IT1253679B (it) * | 1991-08-30 | 1995-08-22 | Sgs Thomson Microelectronics | Circuito di rispristino all'accensione di un circuito integrato aventeun consumo statico nullo. |
US5218237A (en) * | 1992-01-02 | 1993-06-08 | Etron Technology Inc. | Circuit forming output pulse a selected delay after initiating pulse |
FR2690748A1 (fr) * | 1992-04-30 | 1993-11-05 | Sgs Thomson Microelectronics | Circuit de détection de seuil de tension à très faible consommation. |
US5864251A (en) * | 1994-10-28 | 1999-01-26 | Cypress Semiconductor Corporation | Method and apparatus for self-resetting logic circuitry |
US5723990A (en) * | 1995-06-21 | 1998-03-03 | Micron Quantum Devices, Inc. | Integrated circuit having high voltage detection circuit |
US6052006A (en) * | 1998-05-27 | 2000-04-18 | Advanced Micro Devices, Inc. | Current mirror triggered power-on-reset circuit |
US6529046B1 (en) * | 2001-12-12 | 2003-03-04 | Etron Technology, Inc. | Minimum pulse width detection and regeneration circuit |
-
2003
- 2003-08-28 US US10/651,281 patent/US6956409B2/en not_active Expired - Fee Related
-
2004
- 2004-08-20 DE DE200410040507 patent/DE102004040507B4/de not_active Expired - Fee Related
- 2004-08-30 CN CN2004100748803A patent/CN1624806B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1054850A (zh) * | 1989-12-28 | 1991-09-25 | 德克萨斯仪器公司 | 有延滞的低功率、ttl电平cmos输入缓冲器 |
US5864247A (en) * | 1995-08-21 | 1999-01-26 | Matsushita Electronics Corporation | Voltage detection circuit, power-on/off reset circuit, and semiconductor device |
US5852580A (en) * | 1996-12-28 | 1998-12-22 | Hyundai Electronics Industries Co., Ltd. | Repair fuse circuit in a flash memory device |
US5856941A (en) * | 1997-09-15 | 1999-01-05 | Delco Electronics Corporation | One-time programmable latch which allows volatile writes prior to permanent programming |
US6198318B1 (en) * | 1999-01-28 | 2001-03-06 | Legerity, Inc. | Power-on-reset circuit |
US6577166B2 (en) * | 2000-10-19 | 2003-06-10 | Samsung Electronics Co., Ltd. | Voltage level detector and voltage generator using the same |
Non-Patent Citations (1)
Title |
---|
JP特开平11-203883A 1999.07.30 |
Also Published As
Publication number | Publication date |
---|---|
US20050046451A1 (en) | 2005-03-03 |
US6956409B2 (en) | 2005-10-18 |
DE102004040507A1 (de) | 2005-03-31 |
DE102004040507B4 (de) | 2015-04-30 |
CN1624806A (zh) | 2005-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120926 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160114 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110209 Termination date: 20160830 |
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CF01 | Termination of patent right due to non-payment of annual fee |