CN1614745A - Method for preparing polycrystalline silicon layer and light shield - Google Patents
Method for preparing polycrystalline silicon layer and light shield Download PDFInfo
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- CN1614745A CN1614745A CN 200410097453 CN200410097453A CN1614745A CN 1614745 A CN1614745 A CN 1614745A CN 200410097453 CN200410097453 CN 200410097453 CN 200410097453 A CN200410097453 A CN 200410097453A CN 1614745 A CN1614745 A CN 1614745A
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Abstract
The method includes following steps: firstly in base board, amorphous silicon has first amorphous silicon area and second amorphous silicon area; next a photomask is provided, the photomask consists of partly photo zone and photo zone; the partly photo zone and photo zone each relates to second amorphous silicon area and first amorphous silicon area. Laser is used to illuminate the photomask so that the first amorphous silicon area is entirely melted and the second amorphous is preheated; the melted first amorphous silicon area and the second preheated amorphous silicon are crystallized to form first polycrystalline silicon layer; the photomask and base board are moved to make the photo zone to correspond to the preheated second amorphous silicon area; laser is used to illuminate the photomask for making the preheated second amorphous silicon area to entirely melt so that the melted second amorphous silicon area will crystallize second polycrystalline silicon layer.
Description
Technical field
The relevant a kind of method of making polysilicon layer of the present invention, and particularly relevant for a kind of method and employed in the method light shield that utilizes the manufacturing polysilicon layer of the amorphous silicon layer that light shield is preheated by laser light preheating amorphous silicon layer and full-fusing.
Background technology
In the epoch now that development in science and technology is maked rapid progress, display floater is used on the portable electronic devices such as notebook, personal digital assistant and mobile phone widely.Wherein, display floater can be divided into non-polysilicon (amorphous silicon, a-Si) thin-film transistor (thin film transistor, TFT) display floater and low temperature polycrystalline silicon (low temperature polysilicon, LTPS) TFT display floater.LTPSTFT display floater and a-Si TFT display floater maximum difference are, LTPS TFT display floater is with laser tempering (Laser Annealing) method the a-Si layer to be transformed into polysilicon layer, promotes the electron mobility (electron mobility) of thin-film transistor significantly.Therefore, (integratedcircuit IC) can be integrated on the LTPS TFT display floater, does not need extra board design, helps to increase the flexibility ratio of panel and circuit design for panel drive circuit and integrated circuit.So LTPS TFT display floater will become the display floater that has potentiality.
Please refer to Figure 1A Figure 1A to 1C, it is the flow process profile of the method for traditional manufacturing side direction growth polysilicon layer.At first, in Figure 1A figure, provide a substrate 11, and form an amorphous silicon layer 12 on substrate 11.Then, provide a light shield 15 with a light tight district 15a and transparent area 15c in the top of amorphous silicon layer 12, and with a laser light 16 irradiation light shields 15.Then, shown in Figure 1B figure, laser light 16 is to penetrate transparent area 15c and the amorphous silicon layer 12 of full-fusing part, and forms the amorphous silicon layer 12b of fusion and remaining amorphous silicon layer 12a on substrate 11.Owing to have a temperature gradient between the amorphous silicon layer 12b of remaining amorphous silicon layer 12a and fusion, it is the temperature that the temperature of the amorphous silicon layer 12b of fusion is higher than remaining amorphous silicon layer 12a, make that the amorphous silicon layer 12b of fusion will be a crystal seed and become polysilicon layer 13 along arrow 20a and 20b side direction crystal growing with remaining amorphous silicon layer 12a, shown in Fig. 1 C figure.By laser light 16 by having the light shield 15 of light tight district 15a and transparent area 15c, and the polysilicon layer 12 of full-fusing part, and allow the technology of polysilicon layer 12 side direction crystal growings be called as continuously lateral crystallization technique (sequence lateral solidification, SLS) or the laser side crystallization technique (excimer laser annealed lateral crystallization, ELA-LC).In Fig. 1 C figure, polysilicon layer 13 has a lattice or crystal boundary 13b, and polysilicon layer 13 is in the protrusion of surface one defective 13a that corresponds to lattice or crystal boundary 13b, influences the degree of engagement between follow-up insulating barrier and the polysilicon layer 13.
For extending the distance of side direction crystal growing, can prolong the time of melting silicon by the mode that prolongs lasting cycle (pulse during time) of laser pulse or heated substrates 11.Yet, must on process apparatus, install substrate heater additional in the tradition, full wafer substrate 11 is heated, can heated substrates 11.For asking the optimum capacity of sufficient temp gradient and laser light 16 molten amorphous silicon layers 12, adopt the mode of substrate 11 whole heating certainly will improve optimum capacity, shorten the life-span of laser light optical module and the cycle of board maintenance widely.In addition, there are many defective 13a in the polysilicon layer 13 so that the crystallization of laser tempering method institute forms on lattice or crystal boundary 13b.Though the available laser light 16 irradiations second time or high-temperature process are come repair-deficiency 13a, this measure meeting increases fabrication steps and processing procedure cost more.In addition, the amorphous silicon layer 12 of melting part owing to only there is the laser light 16 of part to penetrate transparent area 15c so the laser light 16 of another part will and partially absorb and changes heat into by light tight district 15a partial reflection, causes the rate that is utilized of laser light 16 not high.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method and employed in the method light shield of making polysilicon layer.It can shorten the time that amorphous silicon arrives fusing point with the design of light shield preheating amorphous silicon layer with part transparent area, reduces the use energy of laser light, and prolongs the cycle that laser light optical module life-span and board maintain.In addition, the present invention can prolong the laser melting silicon melting time, increases side direction crystal growing distance and long brilliant processing procedure scope.In addition, the present invention can repair the defective on the polysilicon layer, and improves the utilization rate of laser light.
According to purpose of the present invention, a kind of method of making polysilicon layer is proposed.At first, provide a substrate.Then, form an amorphous silicon region on substrate, amorphous silicon layer has one first amorphous silicon region and one second amorphous silicon region at least.Then, full-fusing first amorphous silicon region and preheating second amorphous silicon region are to crystallize into one first polysilicon layer by first amorphous silicon region of full-fusing.Then, second amorphous silicon region that full-fusing is preheated makes to be crystallized into one second polysilicon layer by second amorphous silicon region of full-fusing.
According to purpose of the present invention, a kind of light shield is proposed, to use for the amorphous silicon layer on a laser light preheating and fusion one substrate, amorphous silicon layer has one first amorphous silicon region and one second amorphous silicon region, and light shield is to relatively move with substrate.Light shield comprises a light shield body, a first's transparent area and a transparent area, and first's transparent area and transparent area are to be formed on the light shield body.When first's transparent area is used to corresponding to first amorphous silicon region surperficial for the laser light partial penetration and preheating second amorphous silicon region.Transparent area is in first's transparent area surface corresponding to first amorphous silicon region during corresponding to second amorphous silicon region surperficial, use full-fusing first amorphous silicon region, make to be crystallized into one first polysilicon layer by first amorphous silicon region of full-fusing for laser light penetrates.When first polysilicon layer is formed and after second amorphous silicon region was preheated, light shield or substrate were to be moved, make the surface of transparent area corresponding to second amorphous silicon region that is preheated.Laser light is to penetrate transparent area and second amorphous silicon region that full-fusing is preheated, and is to crystallize into one second polysilicon layer by second amorphous silicon region of full-fusing.
For above-mentioned purpose of the present invention, characteristics and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is elaborated.
Description of drawings
Figure 1A Figure 1A to 1C is the flow process profile of the method for traditional manufacturing polysilicon layer.
Fig. 2 is the flow chart according to the method for the manufacturing polysilicon layer of embodiments of the invention one.
Fig. 3 A to 3E is a flow process profile of making the method for polysilicon layer according to embodiments of the invention one.
Fig. 4 is the vertical view for the light shield of laser light preheating and molten amorphous silicon layer used according to embodiments of the invention one.
Fig. 5 is the vertical view for the light shield of laser light preheating and molten amorphous silicon layer used according to embodiments of the invention two.
Embodiment
Embodiment one
Please refer to Fig. 2 and Fig. 3 A～3E, Fig. 2 is the flow chart according to the method for the manufacturing polysilicon layer of embodiments of the invention one, and Fig. 3 A to 3E is a flow process profile of making the method for polysilicon layer according to embodiments of the invention one.At first, in step 21, provide a substrate 21, as shown in Figure 3A.Then, enter in the step 22 of Fig. 2, form an amorphous silicon layer 32 on substrate 31, amorphous silicon layer 32 has one first amorphous silicon region 32a and one second amorphous silicon region 32b at least, shown in Fig. 3 B.Then, enter in the step 23, full-fusing first amorphous silicon region 32a and the preheating second amorphous silicon region 32b are shown in Fig. 3 C; Crystallized into one first polysilicon layer 33a by the first amorphous silicon region 32a of full-fusing, shown in Fig. 3 D.
In order to reach the purpose of full-fusing first amorphous silicon region 32a and the preheating second amorphous silicon region 32b, at first, provide a light shield 35, light shield 35 is removable tops in substrate 31 and amorphous silicon region 32, or substrate 31 and amorphous silicon region 32 be removable belows in light shield 35, shown in Fig. 3 D.Light shield 35 has a light shield body 35e, a light tight district 35a, a transparent area 35b of first, transparent area 35c and a second portion transparent area 35d, this light tight district 35a, the transparent area 35b of first, transparent area 35c and second portion transparent area 35d are formed on the light shield body 35e, and transparent area 35c can connect transparent area 35b of first and second portion transparent area 35d.In addition, light shield body 35e can be transparent quartz base plate, and transparent area 35c for example is open region or transparent material district, and the light transmittance of second portion transparent area 35d can be greater than the light transmittance of the transparent area 35b of first.The transparent area 35b of first comprises in the group that a metal level, semi-conductor layer, an insulating barrier or an organic layer form the composite bed that any or combination in any form, and second portion transparent area 35d also comprises in the group that a metal level, semi-conductor layer, an insulating barrier or an organic layer form the composite bed that any or combination in any form.Metal level for example is chromium or molybdenum, and semiconductor layer is polysilicon for example, and insulating barrier for example is silica or silicon nitride or silicon oxynitride.In addition, first's transparent area 35b and second portion transparent area 35d can be any materials that can partly cover or stop light source.When the transparent area 35b of first and second portion transparent area 35d are all metal, during as chromium or molybdenum, in the certain thickness scope, as 1～50 millimicron (nm), light transmittance has inverse relation with thickness.
In Fig. 3 C, transparent area 35c and the transparent area 35b of first are corresponding to the surperficial 32c of the first amorphous silicon region 32a and the surperficial 32d of the second amorphous silicon region 32b.That is to say, transparent area 35c and the transparent area 35b of first be lay respectively at the surperficial 32c of the first amorphous silicon region 32a and the second amorphous silicon region 32b surperficial 32d directly over, and the area of transparent area 35c and the transparent area 35b of first must be corresponding to the area of the surperficial 32d of the surperficial 32c of the first amorphous silicon region 32a and the second amorphous silicon region 32b.Then, with a laser light 36 irradiation light shields 35, laser light 36 can directly penetrate transparent area 35c and shine the surperficial 32c of the first amorphous silicon region 32a.Because the transparent area 35b of first can absorb and the laser light 36 of reflecting part, laser light 36 is transparent area 35b of partial penetration first and shine the surperficial 32d of the second amorphous silicon region 32b.After after a while, the laser light 36 that directly penetrates transparent area 35c is the full-fusing first amorphous silicon region 32a, but 36 of the laser light of the transparent area 35b of partial penetration first are the second amorphous silicon region 32b preheating, not the fusion second amorphous silicon region 32b.When the first amorphous silicon region 32a by full-fusing, and the second amorphous silicon region 32b is preheated but when not being melted, just stop the irradiation of laser light 36.At this moment, by the first amorphous silicon region 32a of full-fusing is that side direction crystal growing becomes one first polysilicon layer 33a, but the surperficial 33c of the first polysilicon layer 33a is because of the out-of-flatness that seems of the defective with lattice or crystal boundary, the heat of the laser light 36 of the second amorphous silicon region 32b absorption portion and remain on a state that has been preheated.
Treat that the first polysilicon 33a is formed and after the second amorphous silicon region 32b is preheated, enter in the step 24 of Fig. 2, the surperficial 33c of second amorphous silicon region 32b that full-fusing is preheated and the fusion first polysilicon layer 33a, make and crystallized into one second polysilicon layer 33b by the second amorphous silicon region 32b of full-fusing, and the surperficial 33c crystallization again of the first polysilicon layer 33a that is melted, the surperficial 33c of the smooth first polysilicon layer 33a with the defective of repairing lattice or crystal boundary.In step 24, at first, the light shield 35 of mobile Fig. 3 C or substrate 31, it is motionless for example to live light shield 35 surely, and along the direction moving substrate 31 of the arrow 37 of Fig. 3 C, make transparent area 35c and second portion transparent area 35d corresponding to the surperficial 32d of the second amorphous silicon region 32b that is preheated and the surperficial 33c of the first polysilicon layer 33a, shown in Fig. 3 D.That is to say, transparent area 35c and second portion transparent area 35d be lay respectively at the surperficial 32d of the second amorphous silicon region 32b that is preheated and the first polysilicon layer 33a surperficial 33c directly over, and the area of transparent area 35c and second portion transparent area 35d must be corresponding to the area of the surperficial 33c of the surperficial 32d of the second amorphous silicon region 32b and the first polysilicon layer 33a.Then, with laser light 36 irradiation light shields 35, laser light 36 penetrates transparent area 35c and the second amorphous silicon region 32b that full-fusing is preheated, and laser light 36 is partial penetration second portion penetrating region 35d and the surperficial 33c of the fusion first polysilicon layer 33a, not semi-molten or the full-fusing first polysilicon layer 33a.At this moment, crystallized into the second polysilicon layer 33b by the second amorphous silicon region 32b of full-fusing, but the surperficial 33d of the second polysilicon layer 33b is because of the out-of-flatness that seems of the defective with lattice or crystal boundary, the surperficial 33c of the first polysilicon layer 33a that is melted crystallization and become more smooth again.
After treating that the second polysilicon layer 33b is formed, enter in the step 25 of Fig. 2, the surperficial 33d of the fusion second polysilicon layer 33b, the surperficial 33d crystallization again of the feasible second polysilicon layer 33b that is melted is to repair the defective of lattice or crystal boundary.In step 25, at first, the light shield 35 of mobile Fig. 3 D or substrate 31, it is motionless for example to live light shield 35 surely, and along the direction moving substrate 31 of the arrow 37 of Fig. 3 D, makes second portion transparent area 35d corresponding to the surperficial 33d of the second polysilicon layer 33b, shown in Fig. 3 E.That is to say, second portion transparent area 35d be positioned at the second polysilicon layer 33b surperficial 33d directly over, and second portion transparent area 35d is corresponding to the area of the surperficial 33d of the second polysilicon layer 33b.Then, with laser light 36 irradiation light shields 35, laser light 36 is partial penetration second portion penetrating region 35d and the surperficial 33d of the fusion second polysilicon layer 33b, not semi-molten or the full-fusing second polysilicon layer 33b.At this moment, the surperficial 33d of the second polysilicon layer 33b that is melted crystallization and become more smooth again.Then, the light shield 35 of mobile Fig. 3 E or substrate 31, it is motionless for example to live light shield 35 surely, and along the direction moving substrate 31 of the arrow 37 of Fig. 3 E, make light shield 35 away from the first polysilicon layer 33a on the substrate 31 and the second polysilicon layer 33b, continue the preheating of other amorphous silicon region and the step of full-fusing.
Please refer to Fig. 4, it is the vertical view for the light shield of laser light preheating and molten amorphous silicon layer used of embodiments of the invention one.In Fig. 4, light shield 35 has a light tight district 35a, a transparent area 35b of first, transparent area 35c and a second portion transparent area 35d at least, and light tight district 35a, the transparent area 35b of first, transparent area 35c and second portion transparent area 35d all are formed on the light shield body 35e of Fig. 3 C～3E.
Yet person skilled in the art person can understand the technology of present embodiment and not be confined to this, for example, after treating that the second polysilicon layer 33b is done, present embodiment can adopt a light shield with second portion transparent area 35d, make laser light 36 see through the surperficial 33c of this light shield fusion first polysilicon layer 33a and the surperficial 33d of the second polysilicon layer 33b with second portion transparent area 35d, make surperficial 33d crystallization and the defective of repairing lattice or crystal boundary again of the surperficial 33c of the first polysilicon layer 33a be melted and the second polysilicon layer 33b that is melted, the surperficial 33d of the surperficial 33c of the first polysilicon layer 33a and the second polysilicon layer 33b becomes more smooth.In addition, the light shield of present embodiment is to design several transparent areas and several first's transparent areas at the distribution area of amorphous silicon layer, and these transparent areas and this a little firsts transparent area are to be staggered to connect into delegation, row or an an array.When relatively moving light shield and substrate, promptly can reach the purpose of the amorphous silicon layer that laser light preheating amorphous silicon layer and full-fusing be preheated, not only shorten the processing procedure time, more and widely promote processing procedure efficient.
Embodiment two
Please refer to Fig. 5, it is the vertical view for the light shield of laser light preheating and molten amorphous silicon layer used according to embodiments of the invention two.In Fig. 5, light shield 55 usefulness are for the amorphous silicon layer on a laser light preheating and fusion one substrate, and amorphous silicon layer has one first amorphous silicon region and one second amorphous silicon region, and light shield 55 is to relatively move with substrate.The formation amorphous silicon layer of present embodiment is on substrate, and the technology that light shield moves with respect to substrate does not repeat them here in embodiment one announcement.Light shield 55 comprises a light shield body 55b, a light tight district 55a, one first mask pattern 56, one second mask pattern 57 and a second portion transparent area 55d, and light tight district 55a is formed on the light shield body 55b.First mask pattern 56, second mask pattern 57 and second portion transparent area 55d are formed on the light shield body 55b in mode spaced apart from each other, and second mask pattern 57 is between first mask pattern 56 and second portion transparent area 55d.Wherein, light shield body 55b can be transparent quartz base plate.
When light shield when being displaced into the top of amorphous silicon layer from left to right, first mask pattern 56 not by the residue amorphous silicon of 57 preheatings of second mask pattern and full-fusing, reaches that comprehensive amorphous silicon is preheated and the purpose of full-fusing in order to preheating and full-fusing.
At first, transparent area 56b of first and 57b are corresponding to second amorphous silicon region, use preheating second amorphous silicon region for the laser light partial penetration. Transparent area 56c and 57c be in the transparent area 56b of first and 57b during corresponding to second amorphous silicon region corresponding to first amorphous silicon region, use full-fusing first amorphous silicon region, make to be crystallized into one first polysilicon layer by first amorphous silicon region of full-fusing for laser light penetrates.
Then, be formed and after second amorphous silicon region was preheated, light shield 55 or substrate were to be moved, and make transparent area 56c and 57c and second portion transparent area 55d correspond respectively to second amorphous silicon region and first polysilicon layer that is preheated when first polysilicon layer.At this moment, laser light is to penetrate transparent area 56c and 57c and second amorphous silicon region that full-fusing is preheated, and is to crystallize into one second polysilicon layer by second amorphous silicon region of full-fusing.Laser light is to penetrate second portion transparent area 55d and the surface of first polysilicon layer of fusion, makes surface crystallization and the defective of repairing lattice or crystal boundary again of first polysilicon layer that is melted, and the surface of first polysilicon layer becomes more smooth.
Then, behind the surface of first polysilicon layer that is melted quilt crystallization again, light shield 55 or substrate are to be moved, and make second portion transparent area 55d corresponding to second polysilicon layer.Laser light is partial penetration second portion transparent area 55d and the surface of fusion second polysilicon layer, surface crystallization and the defective of repairing lattice or crystal boundary again of second polysilicon layer that makes fusion, and the surface of second polysilicon layer becomes more smooth.
So the amorphous silicon layer of the first pattern 56a for a laser light preheating and a full-fusing part makes to be crystallized into one first polysilicon layer by the amorphous silicon layer of this part of full-fusing.The amorphous silicon layer of the second pattern 57a for laser light preheating and full-fusing another part makes to be crystallized into one second polysilicon layer by the amorphous silicon layer of this part in addition of full-fusing.Second portion transparent area 55d is the surface of fusion first polysilicon layer and second polysilicon layer in order to the laser light partial penetration, feasible first polysilicon layer that is melted and the surface crystallization again of second polysilicon layer.Each transparent area 56b of first and 57b comprise in the group that a metal level, semi-conductor layer, an insulating barrier or an organic layer form the composite bed that any or combination in any form, and second portion transparent area 55d also comprises in the group that a metal level, semi-conductor layer, an insulating barrier or an organic layer form the composite bed that any or combination in any form.Metal level for example is chromium or molybdenum, and semiconductor layer is polysilicon for example, and insulating barrier for example is silica or silicon nitride or silicon oxynitride.In addition, each transparent area 56b of first and 57b and second portion transparent area 55d can be any materials that can partly cover or stop light source.The light transmittance of second portion transparent area 55d is can be greater than the light transmittance of each transparent area 56b of first and each transparent area 57b of first, when each transparent area 56b of first, each transparent area 57b of first and second portion transparent area 55d are all chromium or molybdenum.
The employed in the method light shield of the method for the manufacturing polysilicon layer that the above embodiment of the present invention disclosed, it is with the design of light shield preheating amorphous silicon layer with part transparent area, can shorten the time that amorphous silicon arrives fusing point, reduce the use energy of laser light, and prolong the cycle of laser light optical module life-span and board maintenance.In addition, present embodiment can prolong the laser melting silicon melting time, increases side direction crystal growing distance and long brilliant processing procedure scope.In addition, present embodiment can be repaired the defective on the polysilicon layer, and improves the utilization rate of laser light.
In sum; though the present invention discloses as above with a preferred embodiment; yet it is not in order to limit the present invention; any person skilled in the art person; without departing from the spirit and scope of the present invention; when the variation that can make various equivalences and replacement, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (14)
1. method of making polysilicon layer comprises:
One substrate is provided;
Form an amorphous silicon layer on this substrate, this amorphous silicon layer has one first amorphous silicon region and one second amorphous silicon region at least;
This first amorphous silicon region of full-fusing and this second amorphous silicon region of preheating are crystallized into one first polysilicon layer by this first amorphous silicon region of full-fusing; And
This second amorphous silicon region that full-fusing is preheated makes to be crystallized into one second polysilicon layer by this second amorphous silicon region of full-fusing.
2. the method for claim 1 is characterized in that the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
This second amorphous silicon region that full-fusing is preheated and the surface of this first polysilicon layer of fusion make to be crystallized into this second polysilicon layer by this second amorphous silicon region of full-fusing, and the surface crystallization again of this first polysilicon layer that is melted.
3. method as claimed in claim 2 is characterized in that the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
The surface of this second polysilicon layer of fusion, the surface crystallization again of feasible this second polysilicon layer that is melted.
4. the method for claim 1 is characterized in that the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
The surface of this first polysilicon layer of fusion and the surface of this second polysilicon layer, the surface crystallization again of the surface of feasible this first polysilicon layer that is melted and this second polysilicon layer that is melted.
5. the method for claim 1 is characterized in that this first amorphous silicon region of this full-fusing of this method and the step of this second amorphous silicon region of preheating also comprise:
One light shield is provided, and this light shield has a first's transparent area and a transparent area, and this first's transparent area and this transparent area are to correspond respectively to the surface of this second amorphous silicon region and the surface of this first amorphous silicon region; And
Shine this light shield with a laser light, this laser light is to penetrate this transparent area and this first amorphous silicon region of full-fusing, and by this first amorphous silicon region of full-fusing is to crystallize into this first polysilicon layer, and this laser light is this first's transparent area of partial penetration and this second amorphous silicon region of preheating.
6. method as claimed in claim 5 is characterized in that the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
Move this light shield or this substrate, make the surface of this transparent area corresponding to this second amorphous silicon region that is preheated; And
Shine this light shield with this laser light, this laser light is to penetrate this transparent area and this second amorphous silicon region that full-fusing is preheated, is to crystallize into this second polysilicon layer by this second amorphous silicon region of full-fusing.
7. method as claimed in claim 6 is characterized in that this light shield also has a second portion transparent area, and the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
Move this light shield or this substrate, the surface of this second amorphous silicon region that makes this transparent area and this second portion transparent area correspond respectively to be preheated and the surface of this first polysilicon layer; And
Shine this light shield with this laser light, this laser light is to penetrate this transparent area and this second amorphous silicon region that full-fusing is preheated, by this second amorphous silicon region of full-fusing is to crystallize into this second polysilicon layer, this laser light is this second portion transparent area of partial penetration and the surface of this first polysilicon layer of fusion, the surface crystallization again of this that is melted first polysilicon layer.
8. method as claimed in claim 7 is characterized in that the step of this second amorphous silicon region that this full-fusing of this method is preheated also comprises:
Move this light shield or this substrate, make the surface of this second portion transparent area corresponding to this second polysilicon layer; And
Shine this light shield with this laser light, this laser light is this second portion transparent area of partial penetration and the surface of this second polysilicon layer of fusion, and the surface of this that is melted second polysilicon layer is crystallization again.
9. a light shield is used for the amorphous silicon layer on a laser light preheating and fusion one substrate, and this amorphous silicon layer has one first amorphous silicon region and one second amorphous silicon region, and this light shield is to relatively move with this substrate, and this light shield comprises:
One light shield body;
One first's transparent area, it is formed on this light shield body, when being used to corresponding to this first amorphous silicon region surperficial for this laser light partial penetration and this second amorphous silicon region of preheating; And
One transparent area, it is formed on this light shield body, be in this first's transparent area surface corresponding to this first amorphous silicon region during corresponding to this second amorphous silicon region surperficial, use for this laser light to penetrate and this first amorphous silicon region of full-fusing, make to be crystallized into one first polysilicon layer by this first amorphous silicon region of full-fusing;
When this first polysilicon layer is formed and after this second amorphous silicon region is preheated, this light shield or this substrate are moved, make the surface of this transparent area corresponding to this second amorphous silicon region that is preheated, this laser light is to penetrate this transparent area and this second amorphous silicon region that full-fusing is preheated, and is to crystallize into one second polysilicon layer by this second amorphous silicon region of full-fusing.
10. light shield as claimed in claim 9 is characterized in that this first's transparent area comprises a metal level, semi-conductor layer, an insulating barrier or an organic layer.
11. light shield as claimed in claim 9 is characterized in that also comprising:
One second portion transparent area, it is formed on this light shield body, be in this transparent area surface corresponding to this first polysilicon layer during corresponding to this second amorphous silicon region that is preheated surperficial, use for this laser light partial penetration and the surface of this first polysilicon layer of fusion, make the surface crystallization again of this first polysilicon layer of being melted.
12. light shield as claimed in claim 11, it is characterized in that behind the surface of this first polysilicon layer that is melted quilt crystallization again, this light shield or this substrate are moved, make the surface of this second portion transparent area corresponding to this second polysilicon layer, this laser light is this second portion transparent area of partial penetration and the surface of this second polysilicon layer of fusion, makes the surface crystallization again of this second polysilicon layer of fusion.
13. light shield as claimed in claim 12 is characterized in that this first's transparent area comprises a metal level, semi-conductor layer, an insulating barrier or an organic layer.
14. light shield as claimed in claim 12 is characterized in that this second portion transparent area comprises a metal level, semi-conductor layer, an insulating barrier or an organic layer.
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| CN101221902B (en) * | 2008-02-03 | 2010-11-24 | 友达光电股份有限公司 | Mask used for continuous side direction crystal growing technology and laser crystallization method |
| CN105355544A (en) * | 2015-11-24 | 2016-02-24 | 信利（惠州）智能显示有限公司 | Preparation method of low temperature polysilicon thin film and thin film transistor, and thin film transistor |
| CN111092015A (en) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | Semiconductor manufacturing method and semiconductor layer |
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| JP3072005B2 (en) * | 1994-08-25 | 2000-07-31 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
| JP3476320B2 (en) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | Semiconductor thin film and method for manufacturing the same, semiconductor device and method for manufacturing the same |
| US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| JP3642546B2 (en) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | Method for producing polycrystalline semiconductor thin film |
| KR100671212B1 (en) * | 1999-12-31 | 2007-01-18 | 엘지.필립스 엘시디 주식회사 | Method for forming poly silicon |
| KR100405080B1 (en) * | 2001-05-11 | 2003-11-10 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing Si |
| KR100379361B1 (en) * | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | crystallization method of a silicon film |
| KR100424593B1 (en) * | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing Si |
| KR100878240B1 (en) * | 2002-09-16 | 2009-01-13 | 삼성전자주식회사 | A poly-crystallization mask, and a method for manufacturing a thin film transistor using the mask |
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2004
- 2004-11-25 CN CNB2004100974537A patent/CN100394548C/en active Active
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| CN101221902B (en) * | 2008-02-03 | 2010-11-24 | 友达光电股份有限公司 | Mask used for continuous side direction crystal growing technology and laser crystallization method |
| CN105355544A (en) * | 2015-11-24 | 2016-02-24 | 信利（惠州）智能显示有限公司 | Preparation method of low temperature polysilicon thin film and thin film transistor, and thin film transistor |
| CN111092015A (en) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | Semiconductor manufacturing method and semiconductor layer |
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