CN1607881A - Image display device - Google Patents

Image display device Download PDF

Info

Publication number
CN1607881A
CN1607881A CNA2004100852987A CN200410085298A CN1607881A CN 1607881 A CN1607881 A CN 1607881A CN A2004100852987 A CNA2004100852987 A CN A2004100852987A CN 200410085298 A CN200410085298 A CN 200410085298A CN 1607881 A CN1607881 A CN 1607881A
Authority
CN
China
Prior art keywords
layer
light
organic
luminescent layer
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100852987A
Other languages
Chinese (zh)
Other versions
CN100379055C (en
Inventor
中村肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Chi Mei Corp
Chi Mei Optoelectronics Corp
Original Assignee
Kyocera Corp
Chi Mei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp, Chi Mei Optoelectronics Corp filed Critical Kyocera Corp
Publication of CN1607881A publication Critical patent/CN1607881A/en
Application granted granted Critical
Publication of CN100379055C publication Critical patent/CN100379055C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

An organic EL element has a capping layer formed on a cathode layer. The capping layer contains a pigment that absorbs light that has a wavelength that is different from a wavelength of the light emitted from a light emitting layer, and has a reflectance that is higher at interface in multi-layered structure than a reflectance of the light emitted from the light emitting layer. The capping layer prevents incident light from outside from returning to the outside of the organic EL element.

Description

Image display device
Technical field
The present invention relates to have and comprise the image display device of the laminated construction of anode, negative electrode and luminescent layer at least.
Background technology
Though it is backlight that liquid crystal indicator needs, and organic electric-excitation luminescent (electro-luminescent is hereinafter to be referred as EL) display unit does not need (back-light) backlight.Therefore, the desirable slimming display unit of organic EL display.In addition, the visual angle of EL display unit is also unrestricted, so the EL display unit is become next image display device from generation to generation by expectation.
Organic EL display comprises possessing the organic EL that contains luminescent layer between two electrodes at least, voltage is put between this two electrode make luminescent layer luminous with display image.As the structure of organic EL, be known that a kind of top light emitting (top emission) type organic EL, the electrode of one side is the metal for Al etc., the electrode of opposite side is the semitransparent electrode of making for by LiF/AgMg etc.In the top emission type organic EL, cross semitransparent electrode from the transmittance that luminescent layer sends.
Yet this top emission type organic EL has the situation that is reflected according to the incidence angle of the light that luminescent layer sends on the interface of each stack membrane.In this case, only some is transmitted to the outside to the light that sends of luminescent layer.Therefore, be closed in organic EL inside from most of light of the luminescent layer of organic EL emission, can't be fetched to the outside, it is low to cause getting optical efficiency.
" Applied Physics document (Applied Physics Letters) " (Vol.78, pp.544-546, the U.S., 2001) disclose a kind of higher organic EL of getting optical efficiency that has.In disclosed organic EL, the lamination that (hereinafter is referred to as " emission side ") and is provided with the refractive index ratio contact on luminous luminescent layer one side has the organic EL of higher high refractive index layer.Figure 15 is the structural map of lamination of the organic EL of prior art.As shown in figure 15, the organic EL 100 of prior art is included in substrate 111, metal anode layer 112 such as Al, resilient coating 113, hole transporting layer 114, the luminescent layer 115 of double as electron supplying layer, and the cathode layer of making by the transparent membrane such as ITO 116.Organic EL 100 also is included on the cathode layer 116, i.e. gland layer 117 on the emission side of luminescent layer 115.The light that sends from luminescent layer 115 is issued to the outside by cathode layer 116 and gland layer 117.Part light is reflected at anode layer 112, is issued to the outside by cathode layer 116 and gland layer 117 then.
Gland layer 117 is high refractive index layers.In other words, gland layer 117 has the high index of refraction higher than the luminescent layer 115 of contact gland layer 117 and cathode layer 116.When light was injected with the angle more than the critical angle of the low layer of the high layer refractive index of refractive index, light was then by total reflection.On the other hand, when light is injected refractive index high when layer from the low layer of refractive index, even incidence angle is big, light can be by total reflection yet, and has at least a part can inject the high layer of refractive index.Therefore, can be envisioned as inject the high gland layer 117 of refractive index from the low cathode layer 116 of refractive index light on the interface between cathode layer 116 and the gland layer 117 not by total reflection, have at least the luminous energy of a part to see through gland layer 117 and be issued to the outside.Therefore, can be reduced in the light quantity of the total reflection at the interface between gland layer 117 and the cathode layer 116.
The curve chart figure how optical efficiency changes with the thickness of gland layer 117 is got in Figure 16 explanation.Send red light at this hypothesis luminescent layer 115." getting optical efficiency " is to be illustrated under the situation that applies identical intake intensity, considers the visual sense degree that bore hole is determined, from organic EL in the brightness of vertical direction emission to the brightness conversion ratio in the luminescent layer 115." brightness " is meant the activity at each wavelength is multiplied by relative visual sense degree, then this product is combined the value that obtains with wavelength.The maximum of getting optical efficiency when the thickness of gland layer 117 is 80 millimicrons (nm) is 1.43.By adjusting the thickness of gland layer 117, can make organic EL 100 reach 1.40 or the higher optical efficiency of getting.
Therefore, in existing organic EL display, can improve and get optical efficiency.Yet the increase that can not prevent reflectivity in addition, occurs significantly worsening to safeguard rational visual sense degree.Discuss this problem in more detail below with reference to Figure 17 to 20.
Figure 17 is that getting optical efficiency and sending red (R) respectively of wavelength depended in explanation, green (G), and the curve chart of the reflectivity of each organic EV element of blue (B) light.Curve Lb represent to launch blue streak organic EV element get optical efficiency.Curve Lg represent transmitting green light organic EV element get optical efficiency.Curve Lr represent red-emitting organic EV element get optical efficiency.Curve Rb represents to launch the reflectivity of organic EV element of blue streak.Curve Rg represents the reflectivity of organic EV element of transmitting green light.Curve Rr represents the reflectivity of organic EV element of red-emitting.The optical efficiency of getting shown in Figure 17 is the ratio that is transmitted to brightness with the brightness of launching from luminescent layer of reflection coefficient outside.Every kind of reflectivity shown in Figure 17 is the brightness that turns back to organic EV element-external and ratio from the brightness of outside incident.
As shown in figure 17, organic EV element of every kind of color to get optical efficiency higher near emission peak, reflectivity is low than in other wavelength region may then.For example, shown in curve Lr and Rr, organic EV element of red-emitting presents height at 600nm in the wavelength region may of 650nm and gets optical efficiency and antiradar reflectivity, and 600nm is the wave-length coverage of ruddiness to the wavelength region may of 650nm.Same situation is applicable to organic EV element of emission blue streak and organic EV element of transmitting green light.The reflectivity of each organic EV element uprises outside the emission peak district.For example, organic EV element of emission blue streak and organic EV element 520nm shown in " regional a " in Figure 17 of red-emitting present high reflectance in the wavelength region may of 580nm.The light that belongs to the high reflectance of " regional a " turns back to the outside of organic EV element 100 with higher ratio.Shown in the transmission path A2 among Figure 18, the interface of light between anode 112 and resilient coating 113 that belongs to high reflectance " regional a " is reflected, and is fed back into the outside of organic EV element 100 then by gland layer 117.
Figure 19 is with respect to the relative visual sense of the wavelength line of writing music.The expression eyes change with wavelength the visual sense degree of the susceptibility of light, and maximum is 555nm.Relatively the visual sense degree is a relative value, with the visual sense degree when the 555nm as with reference to value.Light with the wavelength that falls into wave-length coverage a presents 0.8 or higher relative light unit as shown in figure 19, and is easy to be discerned by naked eyes.Therefore, in red and blue organic EL, the light that belongs to high reflectance " regional a " is easy to be discerned by naked eyes.
Particularly, in the organic EL of red-emitting and blue streak, think the light of " regional a ", the light that promptly turns back to the outside of organic EL 100 is easy to be identified as by naked eyes has the brightness higher than its intrinsic brilliance.Figure 20 is the curve chart of relation of the thickness of explanation reflectivity and gland layer 117.Reflectivity is to obtain by emissivities shown in Figure 17 being multiplied each other with relative visual sense degree, then product being combined with wavelength.As shown in figure 20, by considering that when the thickness of gland layer 117 was 80nm, reflectivity was 0.62, at this reflectivity, got optical efficiency and became the highest by the visual sense degree.Though do not illustrate, this result is equally applicable to launch in the organic EL of blue streak.
As mentioned above, in existing organic EL 100, even the reflectivity in the luminescence peak zone is lower, the reflectivity of luminescence peak outside is higher.Particularly, send the organic EL 100 of red or blue streak, the reflectivity height in presenting the regional a of high visual sense degree.Therefore, in this organic EL, reflected outside only naked eyes can be seen strongly.As a result, on the display screen of organic EL 100, add outside reverberation, therefore, cause the problem of the contrast deterioration of the image that will show.
Summary of the invention
The present invention makes in view of the shortcoming of above-mentioned prior art, and its objective is provides a kind of image display device, improves the deterioration of contrast with the increase of inhibitory reflex rate.
According to the image display device of one aspect of the invention, possess the stromatolithic structure that comprises anode, negative electrode, reaches luminescent layer is arranged.This image display device comprises that also being located at aforementioned light emission layer sends absorbed layer on the side of light, wherein at least one refractive index height in the refractive index of the layer structure more than one deck at least in the stromatolithic structure on the side of light is sent at luminescent layer in the refractive index of the refractive index ratio luminescent layer of absorbed layer and position, absorb the light wavelength of sending with luminescent layer and do not share the same light the reflection of light rate height that the luminance factor luminescent layer of this light on the interface of stromatolithic structure sends.
Image display device according to a further aspect of the present invention possesses the stromatolithic structure that comprises anode, negative electrode, reaches luminescent layer.This image display device also comprises absorbed layer, is used to absorb the light of the light wavelength different wave length that sends with luminescent layer, in the emissivity at the interface of stromatolithic structure than reflection of light rate height from the luminescent layer emission.
The image display device of another aspect according to the present invention, the stromatolithic structure that possesses the luminescent layer that the light that comprises anode, negative electrode and emission predetermined wavelength is arranged, luminescent layer absorbs the light of the light wavelength different wave length that sends with luminescent layer, at the luminance factor at the interface of the stromatolithic structure reflection of light rate height from the luminescent layer emission.
Description of drawings
Fig. 1 illustrates the sectional view according to the organic EL of first embodiment of the invention.
Fig. 2 A is the molecular structure of pale red pigment.
Fig. 2 B is the graph of relation of pale red pigment molar absorption coefficient number of explanation and wavelength.
Fig. 3 is the schematic diagram that explanation is injected into organic EL transmission light path shown in Figure 1.
Fig. 4 is the curve chart of explanation reflectivity with the gland layer thickness variation of organic EL shown in Figure 1.
Fig. 5 is that the curve chart of optical efficiency with the gland layer thickness variation of organic EL shown in Figure 1 got in explanation.
Fig. 6 A is the curve chart of explanation gland layer thickness variation of x coordinate and organic EL shown in Figure 1 from the color coordinates of the light of organic EL emission.
Fig. 6 B is the curve chart of explanation gland layer thickness variation of y coordinate and organic EL shown in Figure 1 from the color coordinates of the light of organic EL emission.
Fig. 7 is the organic EL sectional view according to second embodiment of the invention.
Fig. 8 is the curve chart of explanation reflectivity with the gland layer thickness variation of organic EL shown in Figure 7.
Fig. 9 is that the curve chart of optical efficiency with the gland layer thickness variation of organic EL shown in Figure 7 got in explanation.
Figure 10 is the curve chart of explanation reflectivity with the gland layer thickness variation of organic EL shown in Figure 7.
Figure 11 is that the curve chart of optical efficiency with the gland layer thickness variation of organic EL shown in Figure 7 got in explanation.
Figure 12 is the organic EL sectional view according to third embodiment of the invention.
Figure 13 is the curve chart of explanation reflectivity with the absorber thickness variation of organic EL shown in Figure 12.
Figure 14 is that the curve chart of optical efficiency with the absorber thickness variation of organic EL shown in Figure 12 got in explanation.
The organic EL sectional view of Figure 15 prior art.
Figure 16 is that the curve chart of optical efficiency with the gland layer thickness variation of the organic EL of prior art shown in Figure 15 got in explanation.
Figure 17 is the organic EL medium wavelength of explanation prior art and gets the curve chart of the relation of optical efficiency and reflectivity.
Figure 18 is the schematic diagram of transmission path of the light of the explanation organic EL that incides prior art shown in Figure 15.
Figure 19 is the curve chart of explanation wavelength and the relation of relative visual sense degree; With
Figure 20 is the curve chart that reflectivity changes with the thickness of gland layer in the explanation prior art organic EL.
Embodiment
Below with reference to the example embodiment of description of drawings according to image display device of the present invention.This image display device is the organic EL display that adopts organic EL.Yet, the invention is not restricted to the description of following embodiment.In the accompanying drawings, same element is represented by identical reference number.In addition, these accompanying drawings are illustrative, it should be appreciated by those skilled in the art that every layer thickness and width, and every layer is different with reality with ratio of total etc.Drawing also contains mutual size or ratio different piece each other.
The organic EL display of first embodiment of the invention at first, is described.The organic EL of first embodiment contains the absorption pigment that is useful on the light that absorbs predetermined wavelength, possesses the gland layer with predetermined refraction.By this gland layer, prevent that more effectively injecting light reissues outside the organic EL.Fig. 1 has illustrated the stromatolithic structure of the organic EL of first embodiment.Organic EL display 10 has with a definite sequence each corresponding red, green and blue organic EL by two-dimensional arrangements.
The organic EL 10 of first embodiment is included in substrate 11 and is provided with anode layer 12, resilient coating 13, hole transporting layer 14, the luminescent layer 15 of double as electron supplying layer, and cathode layer 16.Again, organic EL 10 possesses the gland layer 17 on the cathode layer 16 that the light that is formed on luminescent layer 15 sends side.Below, the light that sends of explanation luminescent layer 15 reflected directly or by anode layer 12 and see through the structure that the organic EL 10 of (Top emitting) type is sent at top that cathode layer 16 and gland layer 17 send the outside.
Anode layer 12 is to play the anode that the hole is supplied to the function of luminescent layer, and the material high with light reflectivity forms.The concavo-convex element short circuit that causes that resilient coating 13 reduces because of anode layer 12.Resilient coating 13 also has to be convenient to transfer layer 14 are injected from anode layer 12 in the hole, has the work function (work function) between anode layer 12 and transfer layer 14, with good efficiencies from the function of anode layer 12 with hole injected hole transfer layer 14.Hole transporting layer 14 is will to be injected into the organic compound layer that cavity conveying is provided with to luminescent layer 15 from anode layer 12 for being used for.Luminescent layer 15 is to be formed by organic compound, when between anode layer 12 and cathode layer 16, producing electric field, can inject respectively hole and electronics from anode layer 12 and cathode layer 16, by these holes and electronics again in conjunction with the light that sends R, G, any color of B.More particularly, luminescent layer 15 also double as for will be transported to the function of the electron supplying layer of luminescent layer 15 from cathode layer 16 injected electrons.In addition, the following description is that to establish the light that luminescent layer 15 sends be R.Cathode layer 16 is as the negative electrode that electronics is supplied to the function of luminescent layer 15, is formed by translucent metal film.
On cathode layer 16, be formed with gland layer 17.Therefore, gland layer 17 is to inject side at the light of luminescent layer 15 to contact with cathode layer 16.This gland layer 17 is to use refractive index ratio cathode layer 16 and luminescent layer 15 high high refractive index films to form, and for example, the use refractive index is 2.38 ZnS (zinc sulphide) formation.Here, when light is injected refractive index high when layer from the low layer of refractive index, even incidence angle is big, light can total reflection yet, has at least a part of luminous energy to inject the high layer of refractive index.So the light of injecting the high gland layer 17 of refractive index ratio cathode layer 16 from cathode layer 16 does not have total reflection at the interface of cathode layer 16 and gland layer 17, have at least a part of luminous energy to see through the outside that gland layer 17 is issued to organic EL 10.Therefore, gland layer 17 has the total reflection light of attenuating on the interface of gland layer 17 and cathode layer 16, and then promotes the function of getting optical efficiency.
Gland layer 17 contains the what is called band indigo plant that possesses the molecular structure shown in Fig. 2 A pale red (Nile red) pigment.This pigment is to make an addition to gland layer 17 with for example percentage of concentration 10%.Fig. 2 B be for mole (mol) extinction that this pigment is shown be the figure of several interdependences to wavelength.Molar absorptivity is that number is to be the every 1mol/dm of chemical seed -3Absorbance.In other words, Fig. 2 B is the absorption spectrum of explanation band blue pale red (Nile red).Shown in Fig. 2 B, this pigment has strong absorption to the light of 500~560nm wavelength.Therefore, shown in the path A 1 of Fig. 3, when the light of 500~560nm wavelength is almost all through gland layer 17 in the middle of the light of organic EL 10 is injected in the outside, or by behind the boundary reflection of anode layer 12 and resilient coating 13, the pigment 19 that is contained in gland layer 17 absorbs, and can not be issued to the outside of organic EL 10 again.This pigment 19 absorbs the light of 500~560nm wavelength, is in the organic EL that in the past sends R, reissues the shared ratio of the light of organic EL outside even the higher light of light of the wavelength that sends than luminescent layer from the light that the outside is injected.In addition, the light of this pigment absorption, that is the light of 500~560nm wavelength has high visual sense degree.Like this, gland layer 17 has the light of looking sensitive 500~560nm wavelength in the light is injected in absorption from the outside function, and then can reduce the outside of reissuing to organic EL 10.
Fig. 4 is the curve chart that the miss emissivity changes with the thickness of gland layer 17.At this, reflectivity is that the percentage of reissuing the light of organic EL 10 outsides in the middle of the light that will inject from the outside converts the value of considering the visual sense degree to.For example, reissue in the middle of the light that will inject from the outside organic EL outside light percentage and than the principal value of integral of value that multiply each other of visual sense degree to wavelength.The light of injecting from the outside uses so-called illuminant-C.In addition, except organic EL 10, also show and possess the reflectivity that does not contain with the organic EL of the conventional configurations of the gland layer of the pigment of blue pale red grade on Fig. 4.
As shown in Figure 4, the reflectivity of the organic EL of conventional configurations demonstrates the situation that the gland layer thickness is 60nm, and minimum value is 0.54, does not demonstrate and demonstrates bigger value because of the gland layer thickness.With respect to this, the reflectivity of organic EL 10 lowers significantly compared to the organic EL condition of conventional configurations, and the thickness of gland layer 17 demonstrates when being 60~80nm below 0.22, and gland layer 17 thickness then are reduced to 0.2 when being 70nm.Therefore, can suppress to look sensitive reverberation sends the outside to organic EL 10 more especially, and then can reduce reflectivity.This is because organic EL 10 has comprised the cause of the gland layer 17 that contains pigment 19.
Fig. 5 is that the optical efficiency of getting of expression organic EL 10 changes curve chart to gland layer 17 varied in thickness.At this, get optical efficiency and be in the light that organic EL is sent in vertical direction brightness when applying identical intake intensity, the percentage of the brightness of enough big luminescent layer inside converts the value of the visual sense degree of the sensitivity of considering to belong to naked eyes to.Here, brightness is meant that activity to each wavelength is multiplied by the value that the product value behind the relative visual sense degree draws the wavelength integration.Fig. 5 except organic EL is arranged, also illustrate conventional configurations organic EL get optical efficiency.As shown in Figure 5, organic EL 10 is 60 to 80mn and reflectivity when low at gland layer 17 thickness, demonstrates and gets optical efficiency all more than 1.2.When gland layer 17 thickness are 80nm, get optical efficiency even upwards rise to as 1.32 of peak.Therefore, organic EL 10 can be kept height and get optical efficiency.
In addition, Fig. 6 A and Fig. 6 B organic EL that organic EL 10 and conventional configurations be shown sends color coordinate that light meets CIE 1931 specifications and changes variation to the gland layer thickness.Fig. 6 A illustrates the variation on the x coordinate of color coordinate, and Fig. 6 B illustrates the variation on the y coordinate of color coordinate.Organic EL 10 shown in Fig. 6 A and 6 B, x coordinate and y seat target value, when the thickness of gland layer equates and the organic EL of conventional configurations only differ 0.003 degree, can not be envisioned as and can exert an influence vision.Therefore,, do not have cataclysm, can send R light from the value of the color coordinate of the light of organic EL 10 output even possess the gland layer 17 that contains with blue pale red pigment.
As mentioned above, because gland layer 17 contains and is with blue pale red pigment, the light that organic EL 10 can be reduced in the wavelength that the luminance factor luminescent layer 15 on the bed boundary sends comes highly, and looks sensitive the outside that light is issued to organic EL 10 again, and then can reduce reflectivity.Therefore, utilize organic EL 10, can realize the organic EL display of the high quality images of minimizing contrast deterioration.Gland layer 17, so organic EL 10 can be reduced in the total reflection of the gland layer 17 and the interface glazing of the layer that is in contact with it and then can be kept height and get optical efficiency because of forming with refractive index ratio cathode layer 16 and the also high high refractive index layer of luminescent layer 15.
In addition, mentioned gland layer 17 above and be provided in a side of on the cathode layer 16, but be not limited to this, also can be located at luminescent layer 15 and send sending on the side Anywhere of light.For example, also can be located between luminescent layer 15 and the cathode layer 16.The major part of the light of injecting from the outside reflects at the interface of anode layer 12 and resilient coating 13, sees through resilient coating 13, hole transporting layer 14, luminescent layer 15, and cathode layer 16 and send the outside.In addition, gland layer 17 also possesses the function that optical efficiency is got in lifting.Therefore, or on reverberation is issued to light transmission path outside the organic EL 10, or the light that luminescent layer 15 sends is issued to arbitrary path outside the light transmission path from organic EL 10 on,, can reduce reflectivity as long as the gland layer 17 that contains with blue pale red pigment is set.By on the arbitrary path in such path gland layer 17 being set, then can utilize the blue pale red pigment absorption of the band that is contained in the gland layer 17 to be contained in the light of the central almost whole 500~560nm wavelength of the interior light of reverberation, the light that is of value to this wavelength is not issued to the outside with hard intensity.In addition, press the refractive index of cap rock should be than the refractive index height of the layer of injecting side contacts of the light that sends with luminescent layer 15.Therefore, gland layer 17 be located at light that luminescent layer 15 sends send side the time, the refractive index of gland layer 17 is as long as the layer structure more than one deck at least in the layer structure that sends side of the light that luminescent layer 15 sends is high than luminescent layer 15 and position.
Next the second embodiment of the present invention is described.The organic EL of first embodiment has illustrated the gland layer that possesses the pigment that contains the light that absorbs predetermined wavelength, and second embodiment then illustrates the organic EL that possesses the luminescent layer that adds this pigment.
Fig. 7 is the stromatolithic structure according to the organic EL of second embodiment.In the organic EL 20 of second embodiment, luminescent layer 25 contains the blue pale red pigment of the band that absorbs 500~560nm wavelength light.In addition, gland layer 27 is to form with refractive index ratio cathode layer 16 and luminescent layer 25 high high refractive index films, for example, is 2.38 ZnS formation with refractive index.In addition, in gland layer 27, add and be with blue pale red pigment.Moreover, establish luminescent layer 25 and be and send the situation of R light and describe.
Fig. 8 is the curve chart that the reflectivity of the organic EL of explanation organic EL 20 and conventional configurations changes with the thickness of gland layer 27.At this, the organic EL of conventional configurations possesses not contain is with the blue pale red luminescent layer that waits pigment.As shown in Figure 8, organic EL 20 is with respect to the organic EL of conventional configurations, and reflectivity significantly lowers.As mentioned above, be contained in the blue pale red pigment absorption of band in the luminescent layer 25 only as the R light in addition that sends for luminescent layer 25 the above of first embodiment, be the percentage that in the middle of the light of injecting from the outside, reflects in the bed boundary than R light height, also be to look sensitive light in addition.This light can not be reissued the outside of organic EL 20 with blue pale red absorption, therefore can imagine the reflectivity that can significantly reduce organic EL 20.Fig. 9 is the curve chart that the organic EL of explanation organic EL 20 and conventional configurations changes with the thickness of gland layer 27.As shown in Figure 9, organic EL 20 get almost identical with the organic EL of conventional configurations of optical efficiency, in other words, organic EL 20 is still kept height and is got optical efficiency.
As mentioned above, possess the organic EL 20 that contains the blue pale red luminescent layer 25 of band, can reduce reflectivity than the organic EL of conventional configurations, and then can reach the effect identical with the first embodiment person.
Below explanation is added how much be with blue pale red pigment to luminescent layer 25.Figure 10 is the curve chart how reflectivity of explanation organic EL 20 changes with the thickness of gland layer 27.Add luminescent layer 25 with blue pale red pigment to 2.5%, 5%, 10%, 20% concentration.Figure 11 be organic EL 20 get the dependence of optical efficiency at the thickness of gland layer 27.At this, the concentration with 2.5%, 5%, 10%, 20% is with the blue pale red luminescent layer 25 that adds to of band.
As shown in figure 10, be with bluely when pale red adding with 20% concentration, when the thickness of gland layer 27 was 30nm, reflectivity presented minimum value 0.23.Be with bluely when pale red adding with 10% concentration, when the thickness of gland layer 27 was 40nm, reflectivity presented minimum value 0.21.Be with bluely when pale red adding with 5% concentration, when the thickness of gland layer 27 was 50nm, reflectivity presented minimum value 0.26.Adding the blue pale red situation of band with concentration 2.5%, when the thickness of gland layer 27 was 50nm, reflectivity presented minimum value 0.33.This shows, when the blue pale red amount of the band that adds is higher, can makes the thickness of gland layer 27 thinner, and then can improve the design freedom of stromatolithic structure.In addition, when lowering the blue pale red concentration of band, than increasing the blue pale red concentration of band, reflectivity has the trend that increases.This can be speculated as when the blue pale red amount of the contained band of luminescent layer 25 after a little while, in the middle of the light of the predetermined wavelength of injecting luminescent layer 25, do not reissued with blue pale red absorption the percentage of light of organic EL 20 outsides higher so.
Shown in Figure 11 gets optical efficiency along with being with uprising and step-down of the pale red interpolation concentration of indigo plant.For example, when the blue pale red interpolation concentration of band is 20%, when the thickness of gland layer 27 presents maximum 1.22 during for 70nm, when the blue pale red interpolation concentration of band is 2.5%, when the thickness of gland layer 27 presents maximum 1.39 during for 80nm.Therefore, can imagine that when considering to get optical efficiency the blue pale red concentration of band is preferably lower.
As seeing, consider and get optical efficiency and reflectance value that the blue pale red concentration of band of adding luminescent layer 25 to is preferably in 5% to 10% from Figure 10 and 11.Even to get optical efficiency and be 70nm with the thickness setting of gland layer 27 in order to improve, the value of reflectivity is 0.32~0.35, can be of value to the reduction reflectivity than the organic EL of routine.So, add the blue pale red concentration of band of luminescent layer 25 and the thickness of gland layer 27 to, just can and get optical efficiency and be set in suitable value reflectivity by adjustment.
In addition, in a second embodiment, by to reducing reflectivity with the light that absorbs predetermined wavelength, but the invention is not restricted to this, also can use the material of the molecular configuration that possesses the light that can absorb predetermined wavelength to form luminescent layer with blue pale red interpolation luminescent layer 25.So also with in luminescent layer, add the blue pale red situation of band and can absorb the light of predetermined wavelength in the same manner, and then the light that can help to reduce this wavelength is reissued the outside of organic EL.
Below the third embodiment of the present invention will be described.In first and second embodiment, be illustrated at the organic EL that on gland layer or luminescent layer, adds the pigment of the light that absorbs predetermined wavelength.The 3rd embodiment then illustrates the organic EL that the absorbed layer that adds pigment is set in addition.
Figure 12 is the stromatolithic structure of the organic EL of the 3rd embodiment.The organic EL 30 of present embodiment has gland layer 37a and absorbed layer 37b on cathode layer 16.Gland layer 37a and absorbed layer 37b are film formed with the high high index of refraction of the refractive index of refractive index ratio cathode layer 16 and luminescent layer 15, and play the effect of the high refractive index film of being mentioned.In addition, with the identical mode of gland layer 37a, use the high high refractive index film of refractive index than cathode layer 16 and luminescent layer 15 to form absorbed layer 37b, the refractive index of absorbed layer 37b and gland layer 37a's is basic identical.For example, gland layer 37a and absorbed layer 37b are to be that 2.38 ZnS forms with refractive index.Therefore, reduce at the light of total reflection on the interface of gland layer 37a and cathode layer 16 and the light of total reflection on the interface of gland layer 37a and absorbed layer 37b.Therefore, gland layer 37a and absorbed layer 37b have the function of getting optical efficiency that promotes light.The gross thickness of the thickness of gland layer 37a and the thickness of absorbed layer 37b is to be preferably 60~90nm.
In addition, the blue pale red concentration of band of adding absorbed layer 37b to is 10%.This band blue pale red and first and second embodiment's is identical, possess to absorb the R light in addition that luminescent layer 15 sends, and than R reflection of light rate, the reflectivity height on the bed boundary, the function of looking sensitive light.Therefore, be injected into blue pale red absorption of band that most of light absorbed layer 37b of absorbed layer 37b comprises.Therefore, can imagine that the light quantity of the outside of reissuing organic EL 30 then reduces, and then reflectivity reduces also.To and get the optical efficiency explanation at the reflectivity of organic EL 30 below.In addition, also on the organic EL 30, the gross thickness of the thickness of gland layer 37a and the thickness of absorbed layer 37b is that the reason of 60~90nm describes preferably.
Figure 12 is the refractive index of explanation organic EL 30, the curve chart that changes at the thickness of absorbed layer 37b when the thickness of gland layer 37a is 20nm, 40nm and 60nm.Figure 14 be explanation organic EL 30 get optical efficiency, the curve chart that when the thickness of gland layer 37a makes 20nm, 40nm and 60nm, changes at the thickness of absorbed layer 37b.As shown in figure 13, the minimum of the reflectivity of organic EL 30 is 0.4 or littler, and is irrelevant with the thickness of gland layer 37a.The reflectivity of organic EL of considering conventional configurations is more than 0.54, so organic EL 30 has been realized the reduction of reflectivity.As shown in figure 14, the maximum of getting optical efficiency is 1.30 or more reaches, and irrelevant with the thickness of gland layer 37a.Therefore, compare with the organic EL of conventional configurations, the optical efficiency of getting of organic EL 30 reduces not quite, and can keep the high optical efficiency of getting.Therefore, the organic EL 30 of the 3rd embodiment has also reached the effect identical with first and second embodiment.
Shown in Figure 13 and 14, be 60nm at the thickness of gland layer 37a, reflectivity presented maximum 0.35 when the thickness of absorbed layer 37b was 10nm, got optical efficiency and presented 1.38 high value.Therefore, when the thickness of gland layer 37a made 60nm, the thickness of absorbed layer 37b can be done thinly, and then can promote the design freedom of stromatolithic structure.In addition, reflectivity is 0.4 or lower when the aggregate thickness of the thickness of gland layer 37a and absorbed layer 37b is 60~90nm, getting optical efficiency is 1.2 or higher, therefore, the thickness of gland layer 37a can imagine during for 60nm preferably by adjusting the thickness of absorbed layer 37b, and making the gross thickness of the thickness of the thickness of gland layer 37a and absorbed layer 37b is 60~90nm.
Using reflectivity is 0.25 or lower, gets optical efficiency and be 1.2 or higher organic EL, can realize more high-quality organic EL display.This is that reflectivity also reduces, and then can suppress the cause of contrast deterioration because can be higher from the luminous intensity that organic EL takes out.When the thickness of gland layer 37a is 40nm, from Figure 13 and 14 as can be known, reflectivity 0.25 or the thickness of following absorbed layer 37b be 10~40nm, get optical efficiency 1.2 or the thickness of above absorbed layer 37b be 20~50nm.Therefore, reflectivity 0.25 or below, get optical efficiency 1.2 or the thickness of above absorbed layer 37b be 20~40nm.In other words, can imagine the gross thickness 60~80nm preferably of the thickness of the thickness of gland layer 37a and absorbed layer 37b.When the thickness of gland layer 37a is 20nm, from Figure 13 and 14 as can be known, reflectivity be 0.25 or the thickness of following absorbed layer 37b be 30~70nm, get optical efficiency and be 1.2 or the thickness of above absorbed layer 37b be 40~70nm.Therefore, reflectivity be 0.25 or below, get optical efficiency and be 1.2 or the thickness of above absorbed layer 37b be 40~70nm.In other words, the gross thickness that can imagine the thickness of the thickness of gland layer 37a and absorbed layer 37b is preferably 60~90nm.Like this, when the thickness of gland layer 37a was 40nm or 20nm, from above-mentioned trend, the gross thickness of the thickness of gland layer 37a and the thickness of absorbed layer 37b can imagine preferably be 60~90nm.
Though in order to reduce the thickness that reflectivity preferably increases absorbed layer 37b, from the result of Figure 13, along with the varied in thickness of absorbed layer 37b, minimum value can appear in reflectivity.Therefore, the thickness of absorbed layer 37b is not thickly to be exactly.In addition, though in order to shorten seeing through the path and improving the gross thickness of the thickness of getting thickness that optical efficiency preferably reduces gland layer 37a and absorbed layer 37b of light, from result shown in Figure 14, along with the varied in thickness of absorbed layer 37b, maximum can appear in reflectivity.Therefore, the gross thickness of the thickness of the thickness of gland layer 37a and absorbed layer 37b is not thin all right.Therefore, as mentioned above like that the total thickness of the thickness of the thickness of gland layer 37a and absorbed layer 37b can imagine that 60~90nm that the minimum that comprises reflectivity comprises the maximum of getting optical efficiency again is good.In addition, can imagine good is that the gross thickness of the thickness of the thickness of gland layer 37a and absorbed layer 37b is that 70~80nm is good.Gross thickness than the thickness of the thickness of gland layer 37a and absorbed layer 37b is the situation of 60~90nm, is of value to the reduction of keeping reflectivity and the lifting of getting optical efficiency in addition.The gross thickness of the thickness of gland layer 37a and the thickness of absorbed layer 37b is limited to narrower scope, so be of value to the design freedom that promotes stromatolithic structure.
In addition, when the thickness of gland layer 37a is 40nm or 20nm, present reflectivity and be 0.25 or below, get optical efficiency and be 1.2 or the thickness range of above absorbed layer 37b wider.Therefore, the thickness setting of gland layer 37a is 40nm or 20nm, and is uneven even the thickness of absorbed layer 37b produces on manufacture process, and also can realize the inhibitory reflex rate to increase and to get the organic EL of optical efficiency reduction.
Like this, at the 3rd embodiment, thickness by adjusting gland layer 37a and the thickness of absorbed layer 37b even if on making uneven situation is arranged, still can be realized reflectivity and get the organic EL display that the little high quality graphic of influence of optical efficiency shows.
In addition, in the 3rd embodiment,, the invention is not restricted to this, also can be located on the anode layer 12 though be on gland layer 37a, absorbed layer 37b to be set.Most light of injecting from the outside reflects at the interface of anode layer 12 and resilient coating 13.Therefore, when any place configuration that sees through the path at this reverberation contains the blue pale red absorbed layer 37b of band, can help to press down reverberation and be mapped to the outside once again, thereby reduce reflectivity.In addition, the gland layer 37a of present embodiment is located on the cathode layer 16, but the invention is not restricted to this, also is suitable for being arranged on the side of sending of light that luminescent layer 15 sends.So long as be located at light that luminescent layer 15 the sends any place from the path that organic EL 30 sends, the total reflection that promptly helps to lower the bed boundary glazing.In addition, the refractive index of gland layer 37a is as long as the layer structure of injecting side contacts of the light of specific pressure cap rock 37a and luminescent layer 15 is high.Therefore, be located at gland layer 37a under the situation of sending side of the light that luminescent layer 15 sends, as long as the refractive index of gland layer 37a is than luminescent layer 15 and be arranged in the layer structure that sends side of the light that luminescent layer 15 sends the layer structure more than one deck is high at least.
In first to the 3rd embodiment, each organic EL red-emitting.Yet, the invention is not restricted to this, each organic EL emission can be launched blue streak, possesses gland layer 17, luminescent layer 25 or contains the absorbed layer 37 that is called as with blue pale red pigment.The organic EL that sends B light also is to comprise band blue pale red gland layer 17, luminescent layer 25 or absorbed layer 37b by having, in the middle of the light beyond the B, the light that the percentage that is reflected on the bed boundary is high, the light of looking sensitive 500~560nm wavelength is not issued to the outside almost all by blue pale red absorption of band.Therefore, be of value to the reduction reflectivity.In this case, the part that wavelength is short more, optimum thickness is also more little.
In first to the 3rd embodiment, it is blue pale red as adding material that gland layer 17, luminescent layer 25 or absorbed layer 37b comprise band.But the invention is not restricted to this, also can adopt not absorb the light that sends from luminescent layer 15,25, and be absorbed in the high any material of light that the ratio of the light that reflects on the bed boundary sends from luminescent layer 15,25.By gland layer 17, luminescent layer 25 or the absorbed layer 37b that contains this material, help to realize reducing the organic EL of reflectivity.
In addition, be not limited to send R, B light, the situation of sending G light also can make to possess and contain the light that is absorbed as beyond the G light that luminescent layer sends, the organic EL of gland layer 17, luminescent layer 15 or the absorbed layer 37b of the material of the light that the percentage that reflects in the bed boundary in the middle of the light of injecting from the outside is higher than G light.This situation also can realize sending the organic EL of the G light that reflectivity reduces.
In first to the 3rd embodiment, with refractive index is that 2.38 ZnS forms gland layer 17,27,37a and absorbed layer 37b, but the invention is not restricted to present this refractive index materials, the also available side of injecting for light forms than the stack membrane and the high high refractive index film of luminescent layer, refractive index of contact.For example, also can use refractive index is 2.39 titanium oxide (TiO 2) or refractive index be the material of ITO of 1.95 etc.Like this, the side of injecting for light, than the stack membrane and the luminescent layer of contact,, promote the optical efficiency of getting of light so long as have the total reflection that the material of high index of refraction then helps to reduce the light on the bed boundary of gland layer 17,27,37a and absorbed layer 37b and the stack membrane that contacts.In addition, use such material, also can imagine reflectivity and get optical efficiency to present identical trend by adjusting the thickness of gland layer 17,27,37a and absorbed layer 37b with first to the 3rd embodiment.In addition, at first to the 3rd embodiment, luminescent layer the 15, the 25th, double as is that electron supplying layer illustrates, but the invention is not restricted to this, also can outside luminescent layer 15,25 electron supplying layer be set in addition.In addition, in this case, according to refractive index, optimum thickness also can adopt and above-mentioned different value.
Though described the present invention for complete sum is clearly open with respect to specific embodiment, claims are not limited thereto, but are interpreted as embodying all changes and the replacement structure that art technology can be carried out.

Claims (9)

1. an image display device has the stromatolithic structure that comprises anode, negative electrode and luminescent layer, comprising:
Absorbed layer, described absorbed layer are located at the emission side that luminescent layer sends light, and wherein said absorbed layer has
Than the refractive index of described luminescent layer and be arranged in described luminescent layer send light this emission side stromatolithic structure the refractive index of the layer more than one deck at least at least one refractive index height and
Absorption has the light of following properties
The wavelength different with the light wavelength of sending from luminescent layer and
Reflectivity on the interface of this stromatolithic structure is higher than the reflection of light rate of sending from described luminescent layer.
2. image display device according to claim 1, wherein absorption comprises the light that is used to absorb with the light wavelength different wave length that sends from described luminescent layer, and has the additive of reflectivity higher than the reflectivity that sends from luminescent layer on the interface of this stromatolithic structure.
3. an image display device has the stromatolithic structure that comprises anode, negative electrode and luminescent layer, comprising:
Absorption has the absorbed layer of the light of following properties,
The wavelength different with the light wavelength of sending from luminescent layer and
Reflectivity on the interface of this stromatolithic structure is higher than the reflection of light rate of sending from described luminescent layer.
4. image display device according to claim 3 also comprises:
High refractive index layer is located at the side of sending that this luminescent layer sends light, the refractive index of the described luminescent layer of its refractive index ratio and be arranged at least one refractive index height that described luminescent layer sends the above refractive index of one deck at least of the stromatolithic structure that sends side of light.
5. image display device according to claim 4, wherein the refractive index height of the described luminescent layer of refractive index ratio of this high refractive index layer.
6. image display device according to claim 4, wherein the combination thickness of absorbed layer and high refractive index layer is 60nm to 90nm.
7. image display device according to claim 3, wherein absorbed layer comprises the light that is used to absorb with the light wavelength different wave length that sends from described luminescent layer, and has the additive of reflectivity higher than the reflectivity that sends from luminescent layer on the interface of this stromatolithic structure.
8. image display device possesses the stromatolithic structure of the luminescent layer of the light that comprises anode, negative electrode and send predetermined wavelength, wherein luminescent layer
Absorption has the light of following properties,
The wavelength different with the light wavelength of sending from luminescent layer and
Reflectivity on the interface of this stromatolithic structure is higher than the reflection of light rate of sending from described luminescent layer.
9. image display device according to claim 8, wherein said luminescent layer comprises the light that is used to absorb with the light wavelength different wave length that sends from described luminescent layer, and has the additive of reflectivity higher than the reflectivity that sends from luminescent layer on the interface of this stromatolithic structure.
CNB2004100852987A 2003-10-15 2004-10-15 Image display device Active CN100379055C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003355217 2003-10-15
JP2003355217A JP4547599B2 (en) 2003-10-15 2003-10-15 Image display device

Publications (2)

Publication Number Publication Date
CN1607881A true CN1607881A (en) 2005-04-20
CN100379055C CN100379055C (en) 2008-04-02

Family

ID=34587157

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100852987A Active CN100379055C (en) 2003-10-15 2004-10-15 Image display device

Country Status (4)

Country Link
US (2) US7268484B2 (en)
JP (1) JP4547599B2 (en)
CN (1) CN100379055C (en)
TW (1) TWI250822B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374847A (en) * 2014-08-14 2016-03-02 三星显示有限公司 Organic light emitting diode display
CN107768526A (en) * 2016-08-22 2018-03-06 纳晶科技股份有限公司 Quanta point electroluminescent device

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4547599B2 (en) * 2003-10-15 2010-09-22 奇美電子股▲ふん▼有限公司 Image display device
US8212269B2 (en) * 2004-11-16 2012-07-03 International Business Machines Corporation Organic light emitting device, method for producing thereof and array of organic light emitting devices
KR100700013B1 (en) * 2004-11-26 2007-03-26 삼성에스디아이 주식회사 Organic Electroluminescence Display Device and Fabricating Method of the same
KR100883306B1 (en) * 2005-03-24 2009-02-11 쿄세라 코포레이션 Luminescent element, light emitting device comprising said luminescent element, and process for producing the same
JP5116992B2 (en) * 2005-05-27 2013-01-09 富士フイルム株式会社 Organic EL device
US7687986B2 (en) * 2005-05-27 2010-03-30 Fujifilm Corporation Organic EL device having hole-injection layer doped with metallic oxide
TW200727738A (en) * 2006-01-09 2007-07-16 Au Optronics Corp Organic electro-luminescence device
CN101461073B (en) 2006-06-01 2013-01-02 株式会社半导体能源研究所 Light-emitting element, light-emitting device and an electronic device
US9397308B2 (en) 2006-12-04 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
KR101426717B1 (en) * 2006-12-04 2014-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, light-emitting device, and electronic device
KR101434361B1 (en) * 2007-10-16 2014-08-26 삼성디스플레이 주식회사 White organic light emitting device and color display apparatus employing the same
TWI479710B (en) * 2007-10-19 2015-04-01 Semiconductor Energy Lab Light-emitting device
WO2009104406A1 (en) * 2008-02-21 2009-08-27 パナソニック株式会社 Light emitting element and display device using the same
WO2009116547A1 (en) * 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
WO2009116605A1 (en) * 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
US8598788B2 (en) * 2008-09-10 2013-12-03 Chimei Innolux Corporation System for displaying images
EP2200407B1 (en) 2008-12-17 2017-11-22 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting element, light emitting device, and electronic device
TWI528862B (en) 2009-01-21 2016-04-01 半導體能源研究所股份有限公司 Light-emitting element, light-emitting device, and electronic device
JP5620146B2 (en) 2009-05-22 2014-11-05 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition equipment
JP5623786B2 (en) 2009-05-22 2014-11-12 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition equipment
US8882920B2 (en) 2009-06-05 2014-11-11 Samsung Display Co., Ltd. Thin film deposition apparatus
US8882921B2 (en) 2009-06-08 2014-11-11 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101074792B1 (en) * 2009-06-12 2011-10-19 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101117719B1 (en) * 2009-06-24 2012-03-08 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101127575B1 (en) 2009-08-10 2012-03-23 삼성모바일디스플레이주식회사 Apparatus for thin film deposition having a deposition blade
JP5328726B2 (en) 2009-08-25 2013-10-30 三星ディスプレイ株式會社 Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
JP5677785B2 (en) 2009-08-27 2015-02-25 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
US20110052795A1 (en) * 2009-09-01 2011-03-03 Samsung Mobile Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
US8696815B2 (en) 2009-09-01 2014-04-15 Samsung Display Co., Ltd. Thin film deposition apparatus
US8876975B2 (en) 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101084184B1 (en) 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101174875B1 (en) 2010-01-14 2012-08-17 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101193186B1 (en) 2010-02-01 2012-10-19 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101156441B1 (en) 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101202348B1 (en) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (en) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101673017B1 (en) 2010-07-30 2016-11-07 삼성디스플레이 주식회사 Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101723506B1 (en) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101738531B1 (en) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 Method for manufacturing of organic light emitting display apparatus, and organic light emitting display apparatus manufactured by the method
KR20120045865A (en) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR20120065789A (en) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR101760897B1 (en) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 Deposition source and apparatus for organic layer deposition having the same
KR102001263B1 (en) * 2011-04-13 2019-07-17 이데미쓰 고산 가부시키가이샤 Organic electroluminescence element
KR101917752B1 (en) * 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, light-emitting module, light-emmiting panel, and light-emitting device
KR101840654B1 (en) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101852517B1 (en) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101857992B1 (en) 2011-05-25 2018-05-16 삼성디스플레이 주식회사 Patterning slit sheet assembly, apparatus for organic layer deposition, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus
KR101857249B1 (en) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 Patterning slit sheet assembly, apparatus for organic layer deposition, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus
KR101826068B1 (en) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 Apparatus for thin layer deposition
KR101268537B1 (en) * 2012-01-18 2013-05-28 한국전자통신연구원 Display
KR20140118551A (en) 2013-03-29 2014-10-08 삼성디스플레이 주식회사 Deposition apparatus, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus
KR102037376B1 (en) 2013-04-18 2019-10-29 삼성디스플레이 주식회사 Patterning slit sheet, deposition apparatus comprising the same, method for manufacturing organic light emitting display apparatus using the same, organic light emitting display apparatus manufacture by the method
KR102318385B1 (en) * 2015-08-13 2021-10-28 삼성디스플레이 주식회사 Organic light emitting display apparatus
CN107946476A (en) * 2017-11-29 2018-04-20 信利(惠州)智能显示有限公司 Organic light-emitting display device
KR20200002242A (en) * 2018-06-29 2020-01-08 캐논 톡키 가부시키가이샤 Film forming apparatus, manufacturing apparatus of organic device, and manufacturing method of organic device
CN113809267B (en) * 2021-09-16 2022-08-05 北京载诚科技有限公司 Display panel and vehicle-mounted display device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582996B2 (en) * 1992-06-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション Photomask manufacturing method
JP2000021570A (en) 1998-06-30 2000-01-21 Idemitsu Kosan Co Ltd El display device
JP2002538493A (en) * 1999-02-24 2002-11-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Display device with light guide
JP2000315582A (en) 1999-05-06 2000-11-14 Denso Corp Organic el element
US20040054174A1 (en) * 2000-08-04 2004-03-18 Tadao Nakaya Nile-red luminescent compound, process for producing the same, and luminiscent element utilizing the same
EP1317165B1 (en) * 2000-08-23 2013-12-04 Idemitsu Kosan Co., Ltd. Organic el display
JP2002231443A (en) * 2001-02-06 2002-08-16 Sony Corp Display device
JP3555759B2 (en) * 2001-06-15 2004-08-18 ソニー株式会社 Display device
JP2003045659A (en) 2001-07-27 2003-02-14 Sony Corp Display device
JP2003059642A (en) * 2001-08-09 2003-02-28 Matsushita Electric Ind Co Ltd Organic electroluminescence element and illumination device, display device and mobile terminal using the same
US7071613B2 (en) * 2001-10-10 2006-07-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device
JP4371297B2 (en) * 2002-10-02 2009-11-25 パイオニア株式会社 Organic EL display
JP2004241134A (en) * 2003-02-03 2004-08-26 Seiko Epson Corp Organic el device and electronic apparatus
US6873093B2 (en) * 2003-02-28 2005-03-29 Motorola, Inc. Organic light emitting diode display structure
KR100542995B1 (en) * 2003-07-29 2006-01-20 삼성에스디아이 주식회사 Organic electroluminescent dispaly device comprising ultraviolet light stabilizer
JP4547599B2 (en) * 2003-10-15 2010-09-22 奇美電子股▲ふん▼有限公司 Image display device
US20050093437A1 (en) * 2003-10-31 2005-05-05 Ouyang Michael X. OLED structures with strain relief, antireflection and barrier layers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374847A (en) * 2014-08-14 2016-03-02 三星显示有限公司 Organic light emitting diode display
CN105374847B (en) * 2014-08-14 2021-03-09 三星显示有限公司 Organic light emitting display
CN107768526A (en) * 2016-08-22 2018-03-06 纳晶科技股份有限公司 Quanta point electroluminescent device

Also Published As

Publication number Publication date
US7268484B2 (en) 2007-09-11
US7825592B2 (en) 2010-11-02
US20050110400A1 (en) 2005-05-26
TWI250822B (en) 2006-03-01
CN100379055C (en) 2008-04-02
TW200517010A (en) 2005-05-16
US20070222378A1 (en) 2007-09-27
JP4547599B2 (en) 2010-09-22
JP2005122980A (en) 2005-05-12

Similar Documents

Publication Publication Date Title
CN1607881A (en) Image display device
TWI284492B (en) Organic EL device
EP2862212B1 (en) Layered structure for oled device and oled device having the same
EP2927983B1 (en) White organic light emitting device
CN101044642A (en) Organic light emitting devices comprising dielectric capping layers
KR101727668B1 (en) Organic light emitting diode display
CN1396791A (en) Display device
EP1731583A1 (en) Fluorescent conversion medium and color light emitting device
CN1744784A (en) Display unit and manufacturing method thereof
CN1656852A (en) Organic EL display
CN1571595A (en) Assembly of organic electroluminescence display device
CN1604708A (en) Organic el element and organic EL panel
CN1684563A (en) Display device, display unit, and imaging device
CN1596040A (en) Light-emitting device substrate and light-emitting device using the same
US7495386B2 (en) Electroluminescent device with improved light output
US8344370B2 (en) Display apparatus
CN1510972A (en) Organic El displaying devices
KR20210130686A (en) White organic light emitting device
CN1462163A (en) Organic electroluminescence device
CN109449309A (en) A kind of OLED device, OLED display panel and OLED display
CN1753593A (en) Upper luminous organic luminescence element
EP4174838B1 (en) Display panel and vehicle-mounted display apparatus
CN1825656A (en) Organic LED structure
CN108417735B (en) Organic electroluminescent device preparation method, organic electroluminescent device and display device
JP2005203142A (en) Organic electroluminescent element

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant