CN1825656A - Organic LED structure - Google Patents
Organic LED structure Download PDFInfo
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- CN1825656A CN1825656A CN 200510008467 CN200510008467A CN1825656A CN 1825656 A CN1825656 A CN 1825656A CN 200510008467 CN200510008467 CN 200510008467 CN 200510008467 A CN200510008467 A CN 200510008467A CN 1825656 A CN1825656 A CN 1825656A
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Abstract
The invention discloses an organic light-emitting diode (LED) structure, comprising a transparent electrode, a reflecting electrode and an organic electroluminescence structure, where the organic electroluminescence structure comprises a luminous doping body-doped luminous layer, arranged between the transparent electrode and reflecting electrode, and its total film thickness is greater than principal wavelength of luminescence, thus avoiding optical interference by increasing spaces between the luminous layer and two electrodes, so as to improve white balance and attenuation of light intensity.
Description
Technical field
The present invention relates to a kind of organic LED structure, particularly about a kind of organic LED structure that reduces optical interference.
Background technology
That Organic Light Emitting Diode (OLED) has is frivolous, flexible musical form, portable, full-color high brightness, power saving, angle of visibility extensively reach advantages such as askiatic ghost, is the new trend of following flat-panel screens.Organic Light Emitting Diode can be divided into anti-phase type (inverted) and noninverting type (non-inverted) again, and wherein anti-phase type is meant the Organic Light Emitting Diode that is begun to grow up by negative electrode.Please refer to Figure 1A, be the structure of known anti-phase type Organic Light Emitting Diode 10.On a glass substrate 11, from bottom to top be in regular turn a transparency electrode 12, an electron transfer layer 13 (Electron Transport Layer), a luminescent layer 14 (EmissiveMaterial layer, EML), a hole transmission layer 15 (Hole Transport Layer), a hole injection layer 16 (Hole Injection Layer) and a reflecting electrode 17.All layer structures between transparency electrode and reflecting electrode are in hereinafter being referred to as " organic electric-excitation luminescent structure ".
The principle of luminosity of Organic Light Emitting Diode is as follows, in two electrodes 12,17 provide an applying bias, make electronics through electron transfer layer 13, make the hole through behind hole injection layer 16 and the hole transmission layer 15 simultaneously, enter one have take place in the organic substance (luminescent layer 14) of the characteristics of luminescence again in conjunction with and form one " excitation photon " (exciton).Afterwards, again energy is discharged and get back to ground state (ground state).And in the middle of the energy that these discharge,, have only 25% energy can be used for being used as the luminous of Organic Light Emitting Diode usually because the selection of luminescent material and the characteristic (spinstate characteristics) of electron spin.Because the difference of selected luminescent layer 14 materials energy jumps (band gap) can make this energy of 25% discharge with the form of the light of different colours, and be formed with the luminescence phenomenon of OLED.
Please refer to Fig. 1 C, it is the chromaticity coordinates variation of 110nm, 120nm, 130nm and 140nm that the curve a of icon, b, c, d represent luminescent layer 14 to thickness between the reflecting electrode 17 respectively.Show that along with the increase of thickness, color saturation will obviously increase when the visual angle is between the 0-80 degree.Please refer to Fig. 1 D, curve A is thickness 140nm, when the visual angle is increased to 80 when spending, light intensity decays about 50% by 0 degree; And curve B is thickness 110nm, light intensity decays about 80%.Show thickness the greater, along with the increase at visual angle, its light intensity decays degree is littler.
In summary, light transmits back and forth between each layer of organic electric-excitation luminescent structure and can produce optical interference.Especially when luminescent layer transmits between reflecting electrode, optical interference will cause the photochromic significantly change along with the difference of this segment thickness.Its change comprises that chromaticity coordinates (CIE1931) changes with the visual angle with luminous intensity with the visual angle skew.These two kinds of light characteristics also can be along with the photochromic wavelength of RGB three and the difference of three kinds of Organic Light Emitting Diode thickness, causes the degree of its change also can be different.So caused the white balance of Organic Light Emitting Diode that deviation can be arranged along with the visual angle.
Summary of the invention
The technical problem to be solved in the present invention is: a kind of organic LED structure is provided, and its thickness that increases luminescent layer to two interpolar does not particularly increase other processing procedure and can reach this purpose to avoid optical interference.
Another technical problem that the present invention will solve is: provide a kind of organic LED structure, by avoiding optical interference to improve the decay of the white balance and the luminous intensity of Organic Light Emitting Diode.
For this reason, the present invention at first proposes a kind of organic LED structure, and it comprises: a transparency electrode; One reflecting electrode; And an organic electric-excitation luminescent structure, comprising that at least one is doped with the luminescent layer of luminous adulterate body, this organic electric-excitation luminescent structure is arranged between this transparency electrode and this reflecting electrode, and its total film thickness has the thickness greater than luminous dominant wavelength.
The present invention also proposes another kind of organic LED structure, and this structure includes: a transparency electrode; One reflecting electrode; One organic electric-excitation luminescent structure is arranged between this transparency electrode and this reflecting electrode, and has the thickness of 380nm-10000nm.
Characteristics of the present invention and have advantage to be: the Organic Light Emitting Diode that the present invention proposes, its basic structure comprises a transparency electrode, a reflecting electrode and an organic electric-excitation luminescent structure.This organic electric-excitation luminescent structure is between transparency electrode and reflecting electrode, and it has a luminescent layer at least.It should be noted that thickness between this luminescent layer and this reflecting electrode greater than luminous dominant wavelength to avoid producing optical interference.
Structure of the present invention can be applicable to the Organic Light Emitting Diode of four kinds of patterns such as bottom-emission (bottom emission), anti-phase type bottom-emission and top light emitting (top emission), anti-phase type top light emitting.In addition, when optical interference occurs between luminescent layer and the transparency electrode, also can use notion of the present invention to avoid its generation.
Description of drawings
Specific embodiments of the invention will be aided with following figure and do more detailed elaboration in comment backward:
Figure 1A is the structure of known anti-phase type Organic Light Emitting Diode 10;
Figure 1B is the schematic diagram of the optical interference origin cause of formation;
Fig. 1 C be luminescent layer to the thickness of reflecting electrode not simultaneously, the chromaticity coordinates value is with visual angle change;
Fig. 1 D be luminescent layer to the thickness of reflecting electrode not simultaneously, luminous intensity is with visual angle change;
Fig. 2 is Organic Light Emitting Diode 20 basic structures of the present invention;
Fig. 3 is the bottom-emission type Organic Light Emitting Diode with structure of the present invention;
Fig. 4 A is the anti-phase bottom-emission type Organic Light Emitting Diode with structure of the present invention;
Fig. 4 B is the anti-phase bottom-emission type Organic Light Emitting Diode with structure of the present invention, adds the auxiliary implanted layer in a hole between its luminescent layer and the reflecting electrode;
Fig. 5 is the top luminescent organic LED with structure of the present invention;
Fig. 6 is the anti-phase top luminescent organic LED with structure of the present invention;
Fig. 7 A is anti-phase bottom-emission type Organic Light Emitting Diode (hole injection layer thickness 700nm);
Fig. 7 B is anti-phase bottom-emission type Organic Light Emitting Diode (hole injection layer thickness 710nm);
Fig. 7 C is anti-phase bottom-emission type Organic Light Emitting Diode (a hole injection layer thickness 710nm+CuPc layer (10nm));
Fig. 7 D be the Organic Light Emitting Diode of Fig. 7 A-7C under different visual angles, its variation of color coordinates;
Fig. 7 E be the Organic Light Emitting Diode of Fig. 7 A-7C under different visual angles, its intensity variation;
Fig. 8 is an optical analog spectrogram of the present invention;
Fig. 9 is visual angle 0 when spending, the comparison diagram of optical analog frequency spectrum and actual measurement frequency spectrum.
The drawing reference numeral explanation:
10 known anti-phase type Organic Light Emitting Diode 50 top luminescent organic LEDs
11 glass substrates, 51 substrates
12 transparency electrodes, 52 reflecting electrodes
13 electron transfer layers, 53 hole injection layers
14 luminescent layers, 54 hole transmission layers
15 hole transmission layers, 55 luminescent layers
16 hole injection layers, 56 electron transfer layers
17 reflecting electrodes, 57 electron injecting layers
20 Organic Light Emitting Diodes, 58 transparency electrodes
21 transparency electrodes, 60 anti-phase top luminescent organic LEDs
22 reflecting electrodes, 61 substrates
23 organic electric-excitation luminescent structures, 62 reflecting electrodes
231 luminescent layers, 63 electron transfer layers
30 bottom-emission type Organic Light Emitting Diodes, 64 luminescent layers
31 substrates, 65 hole transmission layers
32 transparency electrodes, 66 hole injection layers
33 organic electric-excitation luminescent structures, 67 transparency electrodes
331 hole injection layers, 71 hole injection layers
332 hole transmission layers, 72 hole injection layers
333 luminescent layer 73CuPc layers
334 electron transfer layers, 74 reflecting electrodes
335 electron injecting layers, 43 reflecting electrodes
34 reflecting electrodes, 44 hole injection layers
40 anti-phase bottom-emission type Organic Light Emitting Diode 45 luminescent layers
41 transparency electrodes, 46 hole transmission layers
Implanted layer is assisted in 42 electron transfer layers, 46 ' hole
Embodiment
Please refer to Fig. 2, Organic Light Emitting Diode 20 proposed by the invention, its basic structure comprises a transparency electrode 21, a reflecting electrode 22 and an organic electric-excitation luminescent structure 23.Organic electric-excitation luminescent structure 23 is between transparency electrode and reflecting electrode, and it comprises a luminescent layer 231 at least, its luminous adulterate body that mixes.Ben is that the thickness t of organic electric-excitation luminescent structure 23 of the present invention is greater than its luminous dominant wavelength λ.Because the wavelength of visible light scope is between 380-700nm, excessive and increase light absorption for fear of thickness t simultaneously, so the Rational Thickness scope of organic electric-excitation luminescent structure 23 can be due between the 380nm-10000nm.
Organic Light Emitting Diode can be divided into four kinds of patterns such as bottom-emission, anti-phase type bottom-emission and top light emitting, anti-phase type top light emitting.In the Organic Light Emitting Diode of different types, above-mentioned reflecting electrode can be a male or female, and what person of visible electronic transport layer or hole transmission layer is formed thereon and decide; Same, transparency electrode also can be taken as male or female.Below conjunction with figs. is described in detail the application of structure of the present invention in the different types Organic Light Emitting Diode in detail, and enumerate specific embodiment and be described as follows:
Please refer to Fig. 3, for having the bottom-emission type Organic Light Emitting Diode 30 of structure of the present invention.Illustrated base substrate 31 is the exit facet of light.On substrate 31, form a transparency electrode 32, on transparency electrode 32, have an organic electric-excitation luminescent structure 33.Organic electric-excitation luminescent structure 33 comprises that a hole injection layer 331, a hole transmission layer 332, a luminescent layer 333, an electron transfer layer 334, an electron injecting layer 335 from bottom to top pile up in regular turn, form a reflecting electrode 34 at last on organic electric-excitation luminescent structure 33.Wherein transparency electrode 32 is contacted with hole transmission layer 332 and as anode; Reflecting electrode 34 is contacted with electron injecting layer 335 and as negative electrode.
As described in known technology, it is bigger that the spacing of luminescent layer 333 and reflecting electrode 34 influences interference effect, so in the thickness of this part employing greater than luminous dominant wavelength, its zone of reasonableness can be due between the 380nm-10000nm.In the present embodiment, the gross thickness of electron transfer layer 334 and electron injecting layer 335 is greater than luminous dominant wavelength.For example, if Organic Light Emitting Diode 30 glows, luminescent layer 333 should be greater than ruddiness dominant wavelength (about 700nm) with the spacing of reflecting electrode 34.If blue light-emitting, luminescent layer 333 should be greater than blue light dominant wavelength (about 464nm) with the spacing of reflecting electrode 34.If green light, luminescent layer 333 should be greater than green glow dominant wavelength (about 524nm) with the spacing of reflecting electrode 34.What deserves to be mentioned is that the preferred thickness of electron transfer layer 334 is between 5-200nm; The preferred thickness of electron injecting layer 335 is between 40-1000nm.In addition, electron injecting layer 335 also can adopt the thickness greater than luminous dominant wavelength separately.
Please refer to Fig. 4 A, for having the anti-phase bottom-emission type Organic Light Emitting Diode 40 of structure of the present invention.Its structure and Fig. 3 difference be, transparency electrode 41 is contacted with electron transfer layer 42 and as negative electrode; Reflecting electrode 43 is contacted with hole injection layer 44 and as anode.For fear of optical interference, the thickness between luminescent layer 45 and the reflecting electrode 43 should be greater than luminous dominant wavelength.Therefore, hole injection layer 44 can adopt 40-1000nm or greater than the thickness of luminous dominant wavelength.Also can between luminescent layer 45 and hole injection layer 44, add a hole transmission layer 46, and the gross thickness that makes hole transmission layer 46 and hole injection layer 44 is greater than luminous dominant wavelength or between 380nm-10000nm.Wherein the zone of reasonableness of hole transmission layer 46 thickness is 5-200nm.In present embodiment, there is no electron injecting layer and be located between transparency electrode 41 and the electron transfer layer 42, in order to increase the number of free electron, can be at electron transfer layer 42 Doped n-type materials.
In addition, please refer to Fig. 4 B, can add the auxiliary implanted layer 46 ' in a hole between luminescent layer 45 and the reflecting electrode 43.The preferably, the auxiliary implanted layer 46 ' in hole is between hole injection layer 44 and reflecting electrode, and hole auxiliary implanted layer 46 ', hole injection layer 44 and hole transmission layer 46 threes' gross thickness is greater than luminous dominant wavelength.Aspect the material selection, the material energy jump (bandgap) of the auxiliary implanted layer 46 in hole usually must be more than 4eV, and it can be selected from CuPc (CuPc), tin indium oxide (ITO), indium zinc oxide (IZO) or semi-conducting material.
Please refer to Fig. 5, be top luminescent organic LED 50 with structure of the present invention.On substrate 51, from bottom to top form a reflecting electrode 52, a hole injection layer 53, a hole transmission layer 54, a luminescent layer 55, an electron transfer layer 56, an electron injecting layer 57 and a transparency electrode 58 in regular turn.Transparency electrode 58 is as negative electrode in present embodiment; Reflecting electrode 52 is as anode.Be hole injection layer and hole transmission layer between luminescent layer 55 and the reflecting electrode 52, but not electron injecting layer and electron transfer layer.Diagram top transparent electrode 58 is the exit facet of light.Identical with the first two embodiment is to influence the bigger part of interference effect still between luminescent layer 55 and reflecting electrode 52.So this part should adopt greater than luminous dominant wavelength or between the thickness of 380nm-10000nm, the preferably, the thickness of hole transport layer between luminescent layer 55 and reflecting electrode 52 is 5-200nm; And the thickness of hole injection layer is 40-1000nm.
Please refer to Fig. 6, for having the anti-phase top luminescent organic LED 60 of structure of the present invention.On substrate 61, from bottom to top form a reflecting electrode 62, an electron transfer layer 63, a luminescent layer 64, a hole transmission layer 65, a hole injection layer 66 and a transparency electrode 67 in regular turn.Electron transfer layer 63 thickness between luminescent layer 64 and the reflecting electrode 62 are greater than luminous dominant wavelength or between 380nm-10000nm.In addition, between luminescent layer 64 and electron transfer layer 63, more can add an electron injecting layer (not shown), and electron transfer layer 63 has the thickness of 5-200nm, and this electron injecting layer has the thickness of 40-1000nm.Both gross thickness should be greater than luminous dominant wavelength.
What must emphasize is that among the embodiment of above-mentioned Fig. 3 and Fig. 6, alternative adds hole injection layer and/or hole transmission layer in the middle of transparency electrode 32,67 and luminescent layer 333,64; Alternative electron transfer layer and/or the electron injecting layer of adding in the middle of reflecting electrode 34,62 and luminescent layer 333,64.Among the embodiment of above-mentioned Fig. 4 A-4B and Fig. 5, alternative electron injecting layer and/or the electron transfer layer of adding in the middle of transparency electrode 41,58 and luminescent layer 45,55; Alternative hole transmission layer and/or the hole injection layer of adding in the middle of reflecting electrode 43,52 and luminescent layer 45,55.In addition, the material of the reflecting electrode among above-mentioned all embodiment all can be selected from group that metal, semiconductor and metal oxide or conducting polymer form one of them, particularly reflectivity is higher than 40% metal or semiconductor at least.Hole transport layer material all can be NPB (N, N-di (naphthalene-1-yl)-N, N-diphenyl-benzidene).
In summary, no matter be the Organic Light Emitting Diode of which kind of pattern, influence the bigger part of interference effect all between luminescent layer and reflecting electrode, that is interference easily occurs in light emission to reflecting electrode, reflex to again in the process of exit facet of light, not different as negative electrode or anode because of reflecting electrode.Yet the foregoing description is all the optical interference of avoiding between luminescent layer and the reflecting electrode, but optical interference still might occur between luminescent layer and the transparency electrode.Also can use notion of the present invention to avoid its generation this moment.
Fig. 7 A and Fig. 7 B are all anti-phase bottom-emission type Organic Light Emitting Diode, but have different hole injection layers 71,72 thickness; Fig. 7 B has identical hole injection layer 72 thickness with Fig. 7 C, but Fig. 7 C increases by a CuPc layer 73 between hole injection layer 72 and reflecting electrode 74.Its chromaticity coordinates and intensity variation are shown in 7D and 7E.
Please refer to Fig. 7 D, for the Organic Light Emitting Diode of Fig. 7 A-7C under different visual angles, its variation of color coordinates.When the visual angle between the 0-80 degree, when hole injection layer 71,72 thickness are respectively 700nm, 710nm, as curve a1, b1, shown in the c1, its color saturation will be kept stable.No matter whether add CuPc layer 73, it is photochromic all can not to change.Please refer to Fig. 7 E, for the Organic Light Emitting Diode of Fig. 7 A-7C under different visual angles, its intensity variation.Curve A 1 among the figure, B1, and the C1 display view angle is within 60 degree, and luminous intensity is quite stable still.The principal element that proof influences optical interference is the organic electric-excitation luminescent thickness of structure and does not lie in its material category.As long as increasing the organic electric-excitation luminescent thickness of structure can avoid optical interference and alleviate light that Organic Light Emitting Diode sends produces colour cast and light intensity decays with the visual angle phenomenon.
Please refer to Fig. 8, be the optical analog spectrogram.The longitudinal axis is chromaticity coordinates (CIE a 1931) value among the figure; Transverse axis is the thickness of hole injection layer.When luminescent layer surpassed 464nm to the hole injection layer thickness between the reflecting electrode, chromaticity coordinates had begun convergence, and when to 700nm, it is saturated that chromaticity coordinates has been tending towards, represents the optical interference phenomenal behavior not serious, do not had the behavior of serious photochromic skew.Please refer to Fig. 9, when spending for visual angle 0, optical analog frequency spectrum and the comparison diagram of surveying frequency spectrum.Show that both luminous intensities are very approaching with wavelength change, proved that simultaneously analog spectrum is enough to be used for illustrating effect of the present invention.
Though the present invention discloses with specific embodiment; but it is not in order to limit the present invention; any those skilled in the art; the displacement of the equivalent assemblies of under the prerequisite that does not break away from design of the present invention and scope, having done; or, all should still belong to the category that this patent is contained according to equivalent variations and modification that scope of patent protection of the present invention is done.
Claims (17)
1. an organic LED structure is characterized in that, comprising:
One transparency electrode;
One reflecting electrode; And
One organic electric-excitation luminescent structure comprises that at least one is doped with the luminescent layer of luminous adulterate body, and this organic electric-excitation luminescent structure is arranged between this transparency electrode and this reflecting electrode, and its total film thickness has the thickness greater than luminous dominant wavelength.
2. organic LED structure as claimed in claim 1 is characterized in that, this organic electric-excitation luminescent structure more comprises a luminescent layer, and the spacing of this luminescent layer and this reflecting electrode is greater than luminous dominant wavelength.
3. organic LED structure as claimed in claim 2 is characterized in that, have a hole injection layer between this luminescent layer and this reflecting electrode, and the thickness of this hole injection layer is greater than luminous dominant wavelength.
4. organic LED structure as claimed in claim 2 is characterized in that, have a hole transmission layer and a hole injection layer between this luminescent layer and this reflecting electrode, and the gross thickness of this hole transmission layer and this hole injection layer is greater than luminous dominant wavelength.
5. organic LED structure as claimed in claim 2, it is characterized in that, have the auxiliary implanted layer in a hole between this luminescent layer and this reflecting electrode, and the material of the auxiliary implanted layer in this hole is selected from the formed group of CuPc, tin indium oxide, indium zinc oxide and semi-conducting material.
6. organic LED structure as claimed in claim 2 is characterized in that, has the auxiliary implanted layer in a hole between this luminescent layer and this reflecting electrode, and the material of the auxiliary implanted layer in this hole has the above energy jump of 4eV.
7. organic LED structure as claimed in claim 2 is characterized in that, have a hole auxiliary implanted layer, a hole injection layer and a hole transmission layer between this luminescent layer and this reflecting electrode, and three's gross thickness is greater than luminous dominant wavelength.
8. organic LED structure as claimed in claim 2 is characterized in that, have an electron injecting layer between this luminescent layer and this reflecting electrode, and the thickness of this electron injecting layer is greater than luminous dominant wavelength.
9. organic LED structure as claimed in claim 8 is characterized in that, more comprise an electron transfer layer between this luminescent layer and this electron injecting layer, and the gross thickness of this electron transfer layer and this electron injecting layer is greater than luminous dominant wavelength.
10. organic LED structure as claimed in claim 1 is characterized in that, the material of this reflecting electrode be selected from group that metal, semiconductor and metal oxide or conducting polymer form one of them.
11. an organic LED structure is characterized in that, this structure includes:
One transparency electrode;
One reflecting electrode;
One organic electric-excitation luminescent structure is arranged between this transparency electrode and this reflecting electrode, and has the thickness of 380nm-10000nm.
12. organic LED structure as claimed in claim 11 is characterized in that, this organic electric-excitation luminescent structure more comprises a luminescent layer, and the spacing of this luminescent layer and this reflecting electrode is between 380nm-10000nm.
13. organic LED structure as claimed in claim 12 is characterized in that, has a hole injection layer between this luminescent layer and this reflecting electrode, and the thickness of this hole injection layer is 40-1000nm.
14. organic LED structure as claimed in claim 13 is characterized in that, more comprises a hole transmission layer between this luminescent layer and this hole injection layer, and this thickness of hole transport layer is 5-200nm.
15. organic LED structure as claimed in claim 12 is characterized in that, has an electron injecting layer between this luminescent layer and this reflecting electrode, and the thickness of this electron injecting layer is 40-1000nm.
16. organic LED structure as claimed in claim 15 is characterized in that, more comprises an electron transfer layer between this luminescent layer and this electron injecting layer, and this electric transmission layer thickness is 5-200nm.
17. organic LED structure as claimed in claim 11 is characterized in that, the material of this reflecting electrode be selected from group that metal, semiconductor and metal oxide or conducting polymer form one of them.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510008467 CN1825656A (en) | 2005-02-21 | 2005-02-21 | Organic LED structure |
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| CN 200510008467 CN1825656A (en) | 2005-02-21 | 2005-02-21 | Organic LED structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367652A (en) * | 2013-07-06 | 2013-10-23 | 广州新视界光电科技有限公司 | Composite reflection electrode, preparation method and organic electroluminescent device |
| CN107452896A (en) * | 2016-05-30 | 2017-12-08 | 诺瓦尔德股份有限公司 | Organic Light Emitting Diode comprising organic semiconductor layer |
-
2005
- 2005-02-21 CN CN 200510008467 patent/CN1825656A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367652A (en) * | 2013-07-06 | 2013-10-23 | 广州新视界光电科技有限公司 | Composite reflection electrode, preparation method and organic electroluminescent device |
| CN103367652B (en) * | 2013-07-06 | 2016-12-28 | 广州新视界光电科技有限公司 | A kind of complex reflex electrode, preparation method and organic electroluminescence device |
| CN107452896A (en) * | 2016-05-30 | 2017-12-08 | 诺瓦尔德股份有限公司 | Organic Light Emitting Diode comprising organic semiconductor layer |
| CN107452896B (en) * | 2016-05-30 | 2021-08-24 | 诺瓦尔德股份有限公司 | Organic light emitting diode comprising an organic semiconductor layer |
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