CN1832195A - Organic el panel - Google Patents

Organic el panel Download PDF

Info

Publication number
CN1832195A
CN1832195A CNA2006100580430A CN200610058043A CN1832195A CN 1832195 A CN1832195 A CN 1832195A CN A2006100580430 A CNA2006100580430 A CN A2006100580430A CN 200610058043 A CN200610058043 A CN 200610058043A CN 1832195 A CN1832195 A CN 1832195A
Authority
CN
China
Prior art keywords
pixel
luminous
microcavity
aforementioned
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2006100580430A
Other languages
Chinese (zh)
Other versions
CN100438068C (en
Inventor
西川龙司
小村哲司
中井正也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN1832195A publication Critical patent/CN1832195A/en
Application granted granted Critical
Publication of CN100438068C publication Critical patent/CN100438068C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
    • H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
    • H04M1/0235—Slidable or telescopic telephones, i.e. with a relative translation movement of the body parts; Telephones using a combination of translation and other relative motions of the body parts
    • H04M1/0237—Sliding mechanism with one degree of freedom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

An organic EL display panel. wherein each pixel includes a region where a lower reflection film is not present. In each pixel, there is a region where a microcavity structure is formed between a counter electrode and a lower reflection film and another region where the microcavity structure is not formed. The regions differentiated in cavity length can differently enhance the peak wavelength so as to improve the viewing angle dependence. Furthermore, in each of R, G, and B light emitting pixels, the area ratio of a region where the microcavity structure is present and another region where the microcavity structure is not present can be adjusted so as to eliminate the differences caused by the microcavity structure.

Description

Organic EL display panel
Technical field
The present invention relates to a kind of organic EL display panel at each pixel (pixel) configuration organic EL, particularly each pixel has small resonator (microcavity, organic EL display panel microcavity) of the light enhancing that makes specific wavelength.
Background technology
In recent years, slim and can realize that the flat-panel screens (FPD) of miniaturization is gazed at, representational liquid crystal indicator has been applied on the various machines in this FPD.About the light-emitting device (display unit or light source) of electroluminescence (エ レ Network ト ロ Le ミ ネ Star ヤ Application ス) (to call EL in the following text) element of present employing emissive type, particularly utilize the organic compound material that is adopted to produce multiple glow color to carry out the luminous organic EL display of high briliancy (organic EL display panel), its research launches widely.
This organic EL display is different by being configured in the mode of controlling as the liquid crystal panel of light valve its front with the penetrance from light backlight of liquid crystal indicator, but as mentioned above owing to be emissive type, therefore the utilization ratio height of essential glazing, just light exports to outside derivation efficient height, it is luminous therefore can to carry out high briliancy.
Yet organic EL can make the organic layer deterioration because of use, when particularly increasing the injection current that injects organic layer in order to improve glorious degrees, exists organic layer to do sth. in advance the problem of deterioration.
Therefore, in following patent documentation 1 and non-patent literature 1 etc., the small resonator of a kind of employing (microcavity) is disclosed as organic EL display, with the method for the luminous intensity that increases specific wavelength.
Patent documentation 1 Japanese kokai publication hei 6-275381 communique
Grand rich, the angle Tian Dun " element that lead-in light resonance mechanism makes " in mountain in the non-patent literature 1 (" light shake altogether Machine Agencies make The Guide go into レ sub-prime ") applied physics can organic molecular biosciences electronics engineering branch can 1993 the 3rd time seminar p135-p143.
Summary of the invention
Yet when utilizing this microcavity, the visual angle interdependence (visual field interdependence) that has Show Color becomes big problem.This is because the optical length of microcavity is seen and seen differently from incline direction from vertical direction, causes the light wavelength difference that is enhanced.
Therefore, when utilizing microcavity, wish to reduce the visual angle interdependence.
The present invention relates to a kind of at each organic EL display panel by the pixel arrangement organic EL of matrix configuration, it is characterized in that, the organic EL of each pixel possesses the lamination structure with light emitting element layer, and this light emitting element layer is formed on partly penetrating between the film and having lighting function at least of reflectance coating and a relative side, has the microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, is provided with the aforementioned zone that partly penetrates film and have in 1 pixel, reach the aforementioned zone that partly penetrates film is not set.
And, each pixel has that R is luminous, G is luminous or any the organic EL of B in luminous, preferably, be any that R is luminous, G is luminous or B is luminous according to this pixel, change be provided with the aforementioned zone that partly penetrates film, with the aforementioned area that partly penetrates the zone of film is not set.
The present invention relates to a kind of at each organic EL display panel by the pixel arrangement organic EL of matrix configuration, it is characterized in that, the organic EL of each pixel possesses the lamination structure with light emitting element layer, partly penetrate between the film with a relative side and have lighting function at least and this light emitting element layer is formed on reflectance coating, and has a microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, and has the aforementioned thicker zone of film thickness that partly penetrates in 1 pixel, and the aforementioned thin zone of film thickness that partly penetrates.
And, the organic EL of any that each pixel has that R is luminous, G is luminous or B is luminous, preferably, be any that R is luminous, G is luminous or B is luminous according to this pixel, change aforementioned partly penetrate the thicker zone of film thickness, with the aforementioned area ratio in thin zone of film thickness that partly penetrates.
Again and, the present invention relates to a kind ofly has R luminous in each pixel arrangement by matrix configuration, the organic EL display panel of the organic EL of any that G is luminous or B is luminous, it is characterized in that, the organic EL of each pixel possesses the lamination structure with light emitting element layer, and this light emitting element layer is formed on partly penetrating between the film and having lighting function at least of reflectance coating and a relative side, has the microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, and has in 1 pixel and be provided with the long zone of aforementioned microcavity length, and the short zone of aforementioned microcavity length.According to this pixel be that R is luminous, G is luminous or B is luminous in any, change the long zone of above-mentioned microcavity in aforementioned 1 pixel, with the length of the aforementioned microcavity area ratio in short zone.
As described above,, the zone of no microcavity is set in 1 pixel, or is provided with and partly penetrates the different part of film thickness, can improve the visual angle interdependence thus according to the present invention.Moreover microcavity length is different because of color (resonant wavelength), and microcavity length is long more, and the visual angle interdependence is big more.That is to say that the visual angle interdependence is different because of color.
Therefore, adjust the luminous intensity reinforced effects of the specific wavelength that produces because of microcavity, can improve the visual angle interdependence effectively according to the glow color of pixel.
Description of drawings
Fig. 1 is the schematic diagram of the related pixel major part structure of the 1st embodiment.
Fig. 2 is respectively at the bottom of RGB pattern reflectance coating configuration mode figure.
Fig. 3 makes the schematic diagram of the related pixel major part structure of the 2nd embodiment.
Fig. 4 is the schematic diagram of visual angle interdependence.
The graph of a relation of the peak wavelength displacement size when Fig. 5 is 60 ° at light wavelength and visual angle.
Fig. 6 is respectively at the configuration mode figure in the thicker zone of the thickness of RGB pattern.
Fig. 7 is the schematic diagram of the related pixel major part structure of the 3rd embodiment.
Fig. 8 is the schematic diagram of the related pixel major part structure of other embodiment.
Fig. 9 is the schematic diagram of the related pixel major part structure of other embodiment.
Figure 10 is the schematic diagram of the related pixel major part structure of other embodiment.
Embodiment
Below, embodiments of the present invention are described with reference to the accompanying drawings.
The 1st embodiment
Fig. 1 is the schematic diagram of microcavity section construction of a pixel of the related panel of the 1st embodiment.
Predetermined position at glass substrate 10 is formed with semiconductor layer 12, and this semiconductor layer 12 constitutes TFT, electrode or distribution.In the example of diagram, semiconductor layer 12 constitutes source electrode (ソ one ス), raceway groove (チ ャ ソ ネ Le), drain electrode (De レ イ Application) zone of drive TFT 14.The semiconductor layer 12 of this drive TFT 14 is covered by grid oxidation film 16, and on this grid oxidation film 16, be to be formed with gate electrode 18 above the channel region of semiconductor layer 12.Dielectric film 20 between the holomorphism stratification, and cover this gate electrode 18 and grid oxidation film 16.
In the source region of drive TFT 14, run through interlayer dielectric, connect source electrode 22, form planarization film 24 and cover source electrode 22 and interlayer dielectric 20.
Be formed with the transparency electrode 26 of respective pixel viewing area size on planarization film 24, this transparency electrode 26 is connected the drain region of drive TFT 14 by connecting hole.
And the periphery of this transparency electrode 26 is covered by the 2nd planarization film 28, configuration organic EL 30 above transparency electrode 26.
Organic EL 30 is to possess organic compound in transparency electrode 26 and between electrode 32, the lamination structure that particularly possesses the organic layer (light emitting element layer) 34 that comprises luminous organic material at least, organic layer 34 is injected from anode in the hole, electronics is injected organic layer 34 from negative electrode, injected holes and electronics combination once more in organic layer, utilize gained again in conjunction with the energy excitation luminous organic material, when being returned to substrate (substrate) state, produce luminous.
At this, transparency electrode 26 is by for example ITO (tin indium oxide, indium tin oxide) or IZO conductive metal oxide materials such as (indium-zinc oxide, indium zinc oxide) constitute, make by the Al that plays top reflectance coating effect or its alloy over against electrode 32.Be provided with in the lower floor part of transparency electrode 26 in order at the bottom reflectance coating 36 that constitutes small resonator (microcavity) structure between itself and the top reflectance coating (over against electrode 32).That is to say that bottom reflectance coating 36 is not to be arranged on whole light-emitting zone, and is arranged on the part, be not provided with that the light from organic layer 34 can direct directive below in the zone of bottom reflectance coating 36.
This example, relate to a kind of end emission (ボ ト system エ ミ Star シ ヨ Application) type display unit, it makes the light by organic layer 34 gained penetrate substrate 10 and penetrate extremely outside from transparency electrode 26, and bottom reflectance coating 36 can make a part penetrate, promptly have half penetrability from the light of organic layer 34.This bottom reflectance coating 36 can use the alloy film of any or these metal of Ag, Au, Pt, Al, but can be the film of penetrable light, also can be the pattern that mesh shape, clathrate etc. possess peristome.Also can be to constitute by the dielectric dielectric multilayer film more than different 2 kinds of mutual lamination refractive index.In addition, the blooming of each layer dielectric film preferably, for example 1/4 of the purpose reflection wavelength or its integral multiple.
Organic layer 34 possesses and comprises the luminescent layer of luminescent organic molecule at least, and situation about being made of individual layer, 2 layers, multilayer laminated boards more than 3 layers or 4 layers is also arranged according to material.In the example of Fig. 1, utilize the continuous film forming of vacuum vapour deposition etc., from transparency electrode 26 sides as anodize, lamination hole injection layer 122, hole transporting layer 124, luminescent layer 126, electron supplying layer 128, electron injecting layer 130 successively, and the same vacuum vapour deposition of utilization and organic layer 34, on electron injecting layer 130, be formed on this had cathodic process over against electrode 32.And, also electron injecting layer 130 can be considered as the part of counter electrode 32.
Microcavity that present embodiment relates to structure is formed on the zone that this transparency electrode 26 is facing with seizing organic layer 34 on both sides by the arms over against electrode 32, i.e. the bottom reflectance coating 36 of the lower floor of transparency electrode 26 and over against the interlayer between the top reflectance coating of 32 dual-purposes of electrode.At this, the optical length of this microcavity (optical distance) L represents with formula (1): L=∑ n id i, (1), promptly be formed on bottom reflectance coating 36 with over against each layer thickness d of the interlayer of electrode 32 (top reflectance coating), with the long-pending of the refractive index n of this layer and (i be lamination number and for being not less than 1 integer) expression.Moreover this optical length L has the relation shown in the back formula (3) with respect to emission wavelength λ, according to shown in concern and set, can selectivity strengthen wavelength X and it penetrated to outside.
At this, when utilizing the microcavity structure to strengthen certain wavelengths, the visual angle interdependence can uprise as mentioned above.Therefore, in the present embodiment, in 1 pixel, have the zone that does not have bottom reflectance coating 36, in this zone, directly penetrate from the light of organic layer 34.Therefore, because of the microcavity structure strengthens specific wavelength, but have the light of the peak value of wider range from the ejaculation light in the zone that does not have this bottom reflectance coating 36, and the visual angle interdependence is less.Therefore, can strengthen specific wavelength, lower the visual angle interdependence simultaneously from the ejaculation light of 1 pixel.
At this, in the full-color organic EL display panel, have the pixel of pure R, pure G, pure B usually, with respect to the wavelength X (λ r, λ g, λ b) of R, G, B, predetermined optical length L (Lr, Lg, Lb) is by each pixel decision of R, G, B.At this, bottom reflectance coating 36 and adopt metal materials over against electrode 32, the phase deviation of these film reflex times in back formula (3) so that ( represents.
And in the present embodiment, according to the illuminant colour (pressing the RGB branch) of pixel, change has these bottom reflectance coating 36 zones, does not have the area ratio in these bottom reflectance coating 36 zones.That is to say that as shown in Figure 2, the area ratio that has bottom reflectance coating 36 zones is minimum in the R pixel, is medium, and is maximum in the B pixel in the G pixel.
Moreover the resonant wavelength that causes because of the visual angle changes, and promptly the long more visual angle of wavelength interdependence is big more.Fig. 5 illustrates the relation of resonant wavelength and visual angle interdependence.Transverse axis is the resonant wavelength in the front, and resonant wavelength and front resonant wavelength was poor when the longitudinal axis was 60 ° at visual angle.As shown in the figure, interdependence soprano in visual angle is R.Therefore, as present embodiment, the area ratio that has bottom reflectance coating 36 zones is minimum in the R pixel, is medium in the G pixel, and is maximum in the B pixel, and in RGB is of all kinds, can similarly carry out the enhancing of specific wavelength and the improvement of visual angle interdependence.
In Fig. 2, the zone that has bottom reflectance coating 36 is made as the core of pixel (light-emitting zone), can be configured in one-sidedly as shown in Figure 1, also can form several discrete zones etc., can dispose bottom reflectance coating 36 at an arbitrary position.
The 2nd embodiment
Fig. 3 is the structural map of the 2nd embodiment, the whole light-emitting zone of bottom reflectance coating 36 coverings.On the other hand, organic layer 34 is thicker in the part of light-emitting zone.In this example, hole transporting layer 124 left zone in light-emitting zone, figure is thicker, and is thinner in right zone.
The characteristic of microcavity structure is decided by the distance (microcavity length) of 36 of top reflectance coating and bottom reflectance coatings.Therefore, in the present embodiment, the length of microcavity is different because of the thickness of organic layer 34 in 2 zones of luminescent layer, and the light wavelength that is strengthened by the microcavity structure is different because of the position.
Fig. 4 is about the cavity length D of microcavity, at (1) 2720 dust (angstrom, to call A in the following text) (MC=2720), (2) 3800A (MC=3800), (3) no microcavity (reference), (4) when 2720A and 3800A (MC=2720+MC=3800, the area ratio is 1: 1), represent that each sends the visual angle interdependence that EL element is arranged of green glow.And Fig. 4 is chromatic diagram (colourity the figure) (Y * y) of CIE chromaticity diagram (color specification system).At this, microcavity length D be used to the photoresonance that makes predetermined wavelength and the reflectance coating of the above-mentioned optical length L that requires with partly penetrate intermembranous actual thickness (thickness total), with D=∑ di ... (2) expression.
MC=2720 represents to have the resonant wavelength of 570nm in the time of 0 ° at the visual angle with x in scheming, for the bottom right (x=0.39, the Y=0.58) colourity shown in, along with the visual angle becomes big resonant wavelength can be to short wavelength side displacement (move on the upper left side in figure).60 ° the time, have the resonant wavelength of 520nm at the visual angle, can obtain the high green of colorimetric purity, as upper left among the figure (x=0.21, y=0.71) shown in.
On the other hand, MC=3800 represents with black triangle, have the resonant wavelength of 510nm at the visual angle when 0 ° (promptly with respect to microcavity for positive), be upper left among the figure (x=0.19, the green that colorimetric purity Y=0.69) is high, along with the visual angle becomes big, resonant wavelength can be to the short wavelength side displacement, and promptly move the lower right in the figure, in the time of 60 ° at the visual angle, arrive bottom right (x=0.37, position y=0.55) among the figure.Moreover, result from the luminescent spectrum that uses the luminous organic material on this element, owing to when green, have peak value, and blue composition is less, so even resonant wavelength is along with the visual angle becomes big and displacement, this resonant wavelength composition in the luminescent spectrum originally is less, so the luminous intensity of element can reduce, and becomes the green light that partly penetrates.No microcavity (Reference) represents that with ◇ its moving range is x=0.30 to 0.33, and about y=0.60 to 0.63, the visual angle interdependence is less relatively.And, MC=2720+MC=3800 in the present embodiment, its visual angle interdependence is littler during than single microcavity condition.Just, be 0 ° at the visual angle, during MC3800A, be 60 ° at the visual angle, can present high colorimetric purity during MC2700A, no matter, can often keep high colorimetric purity therefore at which visual angle.Therefore, in the element in the different zone of several microcavity length of combination, the moving range of colourity is at x=0.27 to 0.29, about y=0.63 to 0.65, compare no microcavity and more be positioned at the upper left side on chromatic diagram, and displacement is less, and colorimetric purity can promote.
So, according to the structure of present embodiment, in 1 pixel, constitute the microcavity of 2 kinds of thickness (grade differential about 1100A) of 2720A, 3800A respectively, thereby significantly improve (minimizing) visual angle interdependence at the light of green.
At this, the visual angle interdependence of resonance condition and resonant wavelength is expressed from the next.
[several 1]
Figure A20061005804300101
θ’＝sinθ -1{(sinθ)/n}
λ’＝λ+(cosθ-1)λ
Moreover the L in formula represents above-mentioned optical length D (D=∑ n id i), the representative is at the constant of the phase-shifted that metallic reflection caused, and θ represents angle (visual angle).
Peak wavelength was towards the displacement of short wavelength side displacement when Fig. 5 is illustrated in transverse axis peak wavelength when being 0 ° at visual angle, the longitudinal axis were 60 ° at visual angle.Microcavity length D is made as 4500A to 5500A.So, peak wavelength is about 450nm in the time of 0 ° at the visual angle, and the displacement of wavelength is about 28nm during 60 ° at visual angle.And under the condition about 0 ° at the visual angle, peak wavelength 450nm, the displacement of wavelength is about 60nm during 60 ° at visual angle.
So, 0 ° and peak wavelength are to observe on the direction of 60 ° at the visual angle of waveforms of 600nm at the visual angle, and its peak wavelength becomes the waveform that peak wavelength is 540nm to short direction displacement 60nm.Therefore, in order under the situation of green glow 550nm, to carry out interpolation, made up with microcavity length D (resonant wavelength is at the microcavity length D of 600nm to 700nm) about 600nm to 700nm.By following formula as can be known, when m=1, grade differential is roughly 1000A (100nm) to 1300A (130nm).
Moreover MC=2720 and MC=3800 are 570nm (m=1), 510nm (m=2) with respect to the resonant wavelength of the light at 0 ° at visual angle respectively.That is to say that in above-mentioned example, the visual angle interdependence is less, for making the microcavity of paired green glow, when being 0 ° at the visual angle, combination is with 510nm, the 570nm microcavity length D as resonance peak in 1 pixel.
And, to ruddiness 630nm, preferably, the microcavity length D about combination 700nm to 800nm, when m=1, grade differential is roughly about 1600A.To blue light 450nm, preferably, the microcavity length D about combination 480nm to 580nm, when m=1, grade differential is roughly about 1000A.
Moreover grade differential is different different because of m choosing value, but when considering grade differential lining property (lining), preferably, grade differential is controlled at below the 2000A.Just when with the mutually different zone definitions of microcavity length in 1 pixel being the 1st zone (for example above-mentioned MC3800A) and the 2nd zone (for example above-mentioned MC2700A), the microcavity length D in the microcavity length D in the 1st zone and the 2nd zone, preferably, light-filtering characteristic when considering it etc. respectively with purpose resonant wavelength, original luminescent spectrum, colored filter combination, determine respectively, preferably, poor (grade differential) with microcavity length is controlled in the 200nm (2000A).Owing to be set in the above-mentioned scope, even when forming the 1st and the 2nd zone at the thickness of change transparency electrode as mentioned above, rely on the grade differential that is formed on the transparency electrode, can prevent the broken string on electrode upper strata etc.For example, during the thickness thickening of electron supplying layer, may cause driving voltage to rise, because not wishing voltage rises, therefore be set at thickness mostly less than 3000A, prevent the viewpoint that breaks from this electron supplying layer because of utilizing grade differential, preferably, grade differential is controlled at below the 200nm.
As mentioned above, as can be known in 1 pixel region of certain color, because of setting several microcavity length D, can improve the visual angle interdependence and colorimetric purity is promoted, but at this selected several microcavity length D, for example being set at originally at the visual angle 0 ° the time at 1 microcavity length D in the 1st zone, the resonant wavelength of purpose is the thickness of peak wavelength, the 2nd zone compensate microcavity length D at other visual angle when (for example 60 °) with the 1st different being used in zone, the resonant wavelength that is set at purpose is the thickness of peak wavelength.Moreover selected several microcavity length D is long also passable.In the above description, in 1 pixel, form 2 kinds of zones that microcavity length is different, but be not limited to 2 kinds, also can form according to need more than 3 kinds or 3 kinds.
And, in the present embodiment, during the thinner thickness of the organic layer of the microcavity that is used to compensate, according to the glow color (difference of RGB) of pixel, the zone that change organic layer 34 thickness are thicker, with the area ratio of the microcavity lower thickness regions that is used to compensate.That is, pattern as shown in Figure 6, the area ratio in organic layer 34 thicker zones is minimum in the R pixel, is medium in the G pixel, and is maximum in the B pixel.
This is because when investigating visual angle (because of the visual angle changes) characteristic of microcavity structure specific wavelength as mentioned above, the high more cause of long more its visual angle interdependence of wavelength.
Like this, minimum in the R pixel according to the area ratio in organic layer 34 thicker zones, be medium in the G pixel, be maximum in the B pixel, and in RGB is of all kinds, carry out the enhancing of specific wavelength and the improvement of visual angle interdependence equally.
And, not only can suitably change the thickness of organic layer 34, the thickness of also variable transparency electrode 26.
The 3rd embodiment
Fig. 7 is the structural map of the 3rd embodiment.Bottom reflectance coating 36 covers whole light-emitting zone.And this bottom reflectance coating 36 is made of above-mentioned dielectric multilayer film, and makes its thickness different in 1 pixel (1 light-emitting zone).That is, in the thicker zone of thickness, dielectric lamination number can become big.In this embodiment, the left zone of the thickness of bottom reflectance coating 36 in light-emitting zone figure is thicker, and be thinner in right zone.
Microcavity structure decides characteristic by the distance (microcavity length) of 36 of top reflectance coating and bottom reflectance coatings.Therefore, in the present embodiment, during the thickness of change bottom reflectance coating 36, its thickness is thick more, and the reinforced effects of the light of the specific wavelength of microcavity structure is also big more.Therefore, in the present embodiment, in 1 pixel, form for the bigger zone of the reinforced effects of the light of specific wavelength and for the less zone of reinforced effects of the light of specific wavelength.Thus, the light of specific wavelength can be strengthened, the visual angle interdependence can be reduced simultaneously.
And, in the present embodiment, with the foregoing description equally according to the glow color (difference of RGB) of pixel, change the thicker zone of these bottom reflectance coating 36 thickness, with the area ratio in the zone of these bottom reflectance coating 36 thinner thicknesses.That is, pattern as shown in Figure 7, the area ratio in bottom reflectance coating 36 thicker zones is minimum in the R pixel, is medium in the G pixel, is maximum in the B pixel.
Thus, in RGB is of all kinds, carry out the enhancing of specific wavelength and the improvement of visual angle interdependence equally.
Other embodiment
Fig. 8 to Figure 10 represents other embodiment, and the top emitter-base bandgap grading type (ト Star プ エ ミ Star シ ヨ Application イ プ) for light court and glass substrate 10 rightabouts are penetrated.Therefore, the transparency electrode 26 and the bottom reflectance coating 36 between the planarization film 24 that have been configured in anodize are not partly to penetrate film, but reflectance coating.Therefore, the light from organic layer 34 does not penetrate glass substrate 10.
On the other hand, make by nesa coatings such as ITO or IZO, be provided with on the electrode at this and partly penetrate film 40 over against electrode 32.Therefore, at bottom reflectance coating 36 and partly penetrate and be formed with microcavity structure between the film 40.
In Fig. 8, be provided with in the light-emitting zone part on electrode 32 and partly penetrate film 40.Therefore be provided with the part that partly penetrates film 40, be formed with the microcavity structure and the light of specific wavelength is strengthened, and do not have the zone that partly penetrates film 40, light directly penetrates to the top.Therefore, identical with the situation of Fig. 1, can simultaneously strengthen the light of specific wavelength, one side is improved the visual angle interdependence.
In Fig. 9, partly penetrate film 40 whole the setting on the electrode 32, but identical with the situation of Fig. 3, hole transporting layer 124 is in uneven thickness.Therefore, the ejaculation direction difference of light, but still can obtain the effect same with structure shown in Figure 3.And the microcavity length difference can change the thickness of arbitrary layer in the organic layer 34 or several layers, also can change transparency electrode 26 or over against the thickness of electrode 32.
In Figure 10, partly penetrate film 40 whole the setting on the electrode 32, but identical with the situation of Fig. 8, partly penetrate the in uneven thickness of film 40.Therefore, the ejaculation direction difference of light, but still can obtain the effect same with structure shown in Figure 7.
And, example at this Fig. 8 to Figure 10, be provided with area ratio, the thicker zone of thickness that (3) partly penetrate film in the zone that partly penetrates film 40 and the area ratio that the zone that partly penetrates film 40 is not set, zone that (2) organic layer 34 equal thickness are different and partly penetrate the area ratio of the lower thickness regions of film by change (1) in RGB is of all kinds, it is poor to reduce influencing of microcavity of all kinds, and can reach effective purpose of improving the visual angle interdependence.The alter mode of this area ratio and Fig. 2 and shown in Figure 6 identical can be selected its position, size, number etc. arbitrarily.

Claims (5)

1. one kind at each organic EL display panel by the pixel arrangement organic EL of matrix configuration, it is characterized in that,
The organic EL of each pixel possesses the lamination structure with light emitting element layer, and this light emitting element layer is formed on partly penetrating between the film and having lighting function at least of reflectance coating and a relative side, has the microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, is provided with the aforementioned zone that partly penetrates film, and the aforementioned zone that partly penetrates film is not set and have in 1 pixel.
2. organic EL display panel according to claim 1, it is characterized in that, that each pixel has is luminous for R, G is luminous or any one the organic EL of B in luminous, according to this pixel is any that R is luminous, G is luminous or B is luminous, change be provided with the aforementioned zone that partly penetrates film, with the aforementioned area ratio that partly penetrates the zone of film is not set.
3. one kind at each organic EL display panel by the pixel arrangement organic EL of matrix configuration, it is characterized in that,
The organic EL of each pixel possesses the lamination structure with light emitting element layer, and this light emitting element layer is formed on partly penetrating between the film and having lighting function at least of reflectance coating and a relative side, and has a microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, and has aforementioned thicker zone of film thickness and the aforementioned thin zone of film thickness that partly penetrates of partly penetrating in 1 pixel.
4. organic EL display panel according to claim 3, it is characterized in that, that each pixel has is luminous for R, G is luminous or B luminous in any one organic EL, according to this pixel is any that R is luminous, G is luminous or B is luminous, change be provided with the aforementioned zone that partly penetrates film, with the aforementioned area ratio that partly penetrates the zone of film is not set.
One kind each is luminous by the promising R of pixel arrangement of matrix configuration, G is luminous or B luminous in any one the organic EL display panel of organic EL, it is characterized in that,
The organic EL of each pixel possesses the lamination structure with light emitting element layer, partly penetrate between the film with a relative side and have lighting function at least and this light emitting element layer is formed on reflectance coating, and has a microcavity of setting microcavity length in the mode of the light that strengthens predetermined wavelength, this microcavity length is equivalent to aforementioned reflectance coating and the aforementioned interfloor distance that partly penetrates film, and has in 1 pixel and be provided with the long zone of aforementioned microcavity length, and the short zone of aforementioned microcavity length.According to this pixel be that R is luminous, G is luminous or B is luminous in any, change the long zone of above-mentioned microcavity in aforementioned 1 pixel, with the length of the aforementioned microcavity area ratio in short zone.
CNB2006100580430A 2005-02-28 2006-02-28 Organic el panel Active CN100438068C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005053894A JP4573672B2 (en) 2005-02-28 2005-02-28 Organic EL panel
JP2005053894 2005-02-28

Publications (2)

Publication Number Publication Date
CN1832195A true CN1832195A (en) 2006-09-13
CN100438068C CN100438068C (en) 2008-11-26

Family

ID=36931275

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100580430A Active CN100438068C (en) 2005-02-28 2006-02-28 Organic el panel

Country Status (5)

Country Link
US (2) US8129712B2 (en)
JP (1) JP4573672B2 (en)
KR (1) KR20060095494A (en)
CN (1) CN100438068C (en)
TW (1) TW200631466A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7898164B2 (en) 2007-02-09 2011-03-01 Au Optronics Corp. Organic light emitting device comprising microcavity portions containing films with different optical lengths
CN101017884B (en) * 2007-02-28 2013-08-14 友达光电股份有限公司 Self-lighting display device
CN103811669A (en) * 2012-11-09 2014-05-21 上海天马微电子有限公司 Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same
CN108574053A (en) * 2017-03-10 2018-09-25 三星显示有限公司 Organic light-emitting display device and its manufacturing method
CN109950298A (en) * 2019-04-17 2019-06-28 京东方科技集团股份有限公司 A kind of display base plate and preparation method thereof, display device
CN110783469A (en) * 2018-07-30 2020-02-11 乐金显示有限公司 Organic light emitting display device
CN113594386A (en) * 2021-07-28 2021-11-02 京东方科技集团股份有限公司 Display panel and display device

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4758889B2 (en) * 2004-03-26 2011-08-31 パナソニック電工株式会社 Organic light emitting device
JP4411288B2 (en) 2005-03-23 2010-02-10 キヤノン株式会社 Display device
TWI358964B (en) * 2006-04-12 2012-02-21 Au Optronics Corp Electroluminescence display element and method for
DE112008000348B4 (en) * 2007-02-05 2017-06-22 Lg Display Co., Ltd. Organic light emitting device with improved light emission efficiency and method of making the same
JP5167723B2 (en) * 2007-08-21 2013-03-21 セイコーエプソン株式会社 Light emitting device
US7855508B2 (en) * 2007-09-17 2010-12-21 Global Oled Technology Llc LED device having improved light output
US7741770B2 (en) 2007-10-05 2010-06-22 Global Oled Technology Llc LED device having improved light output
TWI367684B (en) * 2007-11-02 2012-07-01 Chimei Innolux Corp Organic light emitting display device and electronic device
KR101404546B1 (en) 2007-11-05 2014-06-09 삼성디스플레이 주식회사 Organic light emitting diode display and method for manufacturing the same
KR20090083197A (en) 2008-01-29 2009-08-03 삼성전자주식회사 Method of manufacturing color filter substrate
US7893612B2 (en) * 2008-02-27 2011-02-22 Global Oled Technology Llc LED device having improved light output
JP2009231274A (en) * 2008-02-27 2009-10-08 Canon Inc Organic light-emitting element, and display apparatus
JP5315761B2 (en) 2008-04-15 2013-10-16 セイコーエプソン株式会社 Organic electroluminescence device
KR100909389B1 (en) 2008-04-21 2009-07-24 삼성모바일디스플레이주식회사 Organic light emitting diode display device
JP2009289592A (en) * 2008-05-29 2009-12-10 Canon Inc Display
KR101603314B1 (en) 2008-09-11 2016-03-15 삼성디스플레이 주식회사 Organic light emitting diode display and method for manufacturing the same
KR20100059447A (en) 2008-11-26 2010-06-04 삼성전자주식회사 Organic light emitting diode display
KR101582941B1 (en) * 2008-12-24 2016-01-08 삼성디스플레이 주식회사 Organic light emitting device and manufacturing method thereof
US8183561B2 (en) * 2009-06-24 2012-05-22 Au Optronics Corporation OLED panel with broadened color spectral components
KR101232736B1 (en) * 2009-10-01 2013-02-13 엘지디스플레이 주식회사 Array substrate for organic electroluminescent device
KR101084240B1 (en) 2009-12-21 2011-11-16 삼성모바일디스플레이주식회사 Organic light emitting diode display
JP2014078536A (en) * 2010-03-15 2014-05-01 Pioneer Electronic Corp Organic el device
KR20120042066A (en) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 Organic light emitting diode display
KR101970675B1 (en) * 2011-08-04 2019-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and lighting device
JP5963458B2 (en) * 2012-01-31 2016-08-03 キヤノン株式会社 LIGHT EMITTING DEVICE, IMAGE FORMING DEVICE, AND IMAGING DEVICE
JP2013165014A (en) * 2012-02-13 2013-08-22 Seiko Epson Corp Organic el device and electronic apparatus
TWI588540B (en) * 2012-05-09 2017-06-21 半導體能源研究所股份有限公司 Display device and electronic device
TWI650580B (en) 2012-05-09 2019-02-11 日商半導體能源研究所股份有限公司 Display device and electronic device
KR102098068B1 (en) * 2013-08-13 2020-04-07 엘지디스플레이 주식회사 White organic light emitting diode display device using micro cavity
US9627649B2 (en) * 2013-11-26 2017-04-18 Lg Display Co., Ltd. Organic light emitting display device
KR20150061558A (en) * 2013-11-26 2015-06-04 엘지디스플레이 주식회사 Organic light emitting display device
JP2015201314A (en) * 2014-04-07 2015-11-12 株式会社ジャパンディスプレイ Light-emitting element display device
CN104900684B (en) 2015-06-12 2018-01-30 京东方科技集团股份有限公司 Display base plate and preparation method thereof, display device
KR102181121B1 (en) 2016-09-20 2020-11-20 주식회사 원익아이피에스 Substrate transfer apparatus and control method of substrate transfer apparatus
JP2019079699A (en) * 2017-10-25 2019-05-23 株式会社ジャパンディスプレイ Display device
KR102662750B1 (en) * 2018-12-20 2024-04-30 엘지디스플레이 주식회사 Display device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2797883B2 (en) * 1993-03-18 1998-09-17 株式会社日立製作所 Multicolor light emitting device and its substrate
US5405710A (en) 1993-11-22 1995-04-11 At&T Corp. Article comprising microcavity light sources
JP3420399B2 (en) * 1995-07-28 2003-06-23 キヤノン株式会社 Light emitting element
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US6111270A (en) * 1998-04-27 2000-08-29 Motorola, Inc. Light-emitting apparatus and method of fabrication
JP4001692B2 (en) * 1999-02-18 2007-10-31 パイオニア株式会社 Organic electroluminescence device and manufacturing method thereof
GB2351840A (en) 1999-06-02 2001-01-10 Seiko Epson Corp Multicolour light emitting devices.
GB2353400B (en) * 1999-08-20 2004-01-14 Cambridge Display Tech Ltd Mutiple-wavelength light emitting device and electronic apparatus
TW522453B (en) 1999-09-17 2003-03-01 Semiconductor Energy Lab Display device
KR100740793B1 (en) * 1999-11-22 2007-07-20 소니 가부시끼 가이샤 Display device
US6710541B2 (en) * 2000-12-22 2004-03-23 Reveo, Inc. Polarized light sources and methods for making the same
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
JP2003109775A (en) 2001-09-28 2003-04-11 Sony Corp Organic electroluminescent element
KR100490535B1 (en) 2001-12-17 2005-05-17 삼성에스디아이 주식회사 Organic electroluminescence device
JP3748406B2 (en) 2001-12-18 2006-02-22 株式会社日立製作所 Display device
KR100834342B1 (en) 2001-12-29 2008-06-02 엘지디스플레이 주식회사 an active matrix organic electroluminescence display and a manufacturing method of the same
KR20030069707A (en) * 2002-02-22 2003-08-27 엘지.필립스 엘시디 주식회사 Organic Electroluminescent Device and Method for Fabricating the same
US6670772B1 (en) * 2002-06-27 2003-12-30 Eastman Kodak Company Organic light emitting diode display with surface plasmon outcoupling
US6747618B2 (en) * 2002-08-20 2004-06-08 Eastman Kodak Company Color organic light emitting diode display with improved lifetime
JP4208526B2 (en) 2002-09-12 2009-01-14 キヤノン株式会社 ORGANIC EL DISPLAY DEVICE AND ELECTRONIC DEVICE HAVING THE DISPLAY DEVICE
US6861800B2 (en) * 2003-02-18 2005-03-01 Eastman Kodak Company Tuned microcavity color OLED display
US6737800B1 (en) * 2003-02-18 2004-05-18 Eastman Kodak Company White-emitting organic electroluminescent device with color filters and reflective layer for causing colored light constructive interference
US6812637B2 (en) * 2003-03-13 2004-11-02 Eastman Kodak Company OLED display with auxiliary electrode
JP2004327373A (en) * 2003-04-28 2004-11-18 Shoka Kagi Kofun Yugenkoshi Organic el full color panel capable of adjusting light color purity and its manufacturing method
US7030553B2 (en) 2003-08-19 2006-04-18 Eastman Kodak Company OLED device having microcavity gamut subpixels and a within gamut subpixel
JP4428979B2 (en) 2003-09-30 2010-03-10 三洋電機株式会社 Organic EL panel
JP4497881B2 (en) 2003-09-30 2010-07-07 三洋電機株式会社 Organic EL device and organic EL panel
JP4895490B2 (en) 2003-09-30 2012-03-14 三洋電機株式会社 Organic EL panel
US7268485B2 (en) * 2003-10-07 2007-09-11 Eastman Kodak Company White-emitting microcavity OLED device
JP2005302313A (en) * 2004-04-06 2005-10-27 Idemitsu Kosan Co Ltd Organic electroluminescent display device and full color device
JPWO2005107327A1 (en) * 2004-04-30 2008-03-21 三洋電機株式会社 Luminous display
JP2005322435A (en) * 2004-05-06 2005-11-17 Seiko Epson Corp Electroluminescent element and display element
US7023013B2 (en) * 2004-06-16 2006-04-04 Eastman Kodak Company Array of light-emitting OLED microcavity pixels
TWI272039B (en) * 2004-06-18 2007-01-21 Sanyo Electric Co Electroluminescence panel
JP4731211B2 (en) * 2004-06-18 2011-07-20 三洋電機株式会社 Electroluminescence panel

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7898164B2 (en) 2007-02-09 2011-03-01 Au Optronics Corp. Organic light emitting device comprising microcavity portions containing films with different optical lengths
CN101017884B (en) * 2007-02-28 2013-08-14 友达光电股份有限公司 Self-lighting display device
CN103811669A (en) * 2012-11-09 2014-05-21 上海天马微电子有限公司 Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same
CN103811669B (en) * 2012-11-09 2016-08-17 上海天马微电子有限公司 Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same
CN108574053A (en) * 2017-03-10 2018-09-25 三星显示有限公司 Organic light-emitting display device and its manufacturing method
CN110783469A (en) * 2018-07-30 2020-02-11 乐金显示有限公司 Organic light emitting display device
CN109950298A (en) * 2019-04-17 2019-06-28 京东方科技集团股份有限公司 A kind of display base plate and preparation method thereof, display device
CN113594386A (en) * 2021-07-28 2021-11-02 京东方科技集团股份有限公司 Display panel and display device
CN113594386B (en) * 2021-07-28 2022-09-23 京东方科技集团股份有限公司 Display panel and display device

Also Published As

Publication number Publication date
CN100438068C (en) 2008-11-26
US20060192220A1 (en) 2006-08-31
JP4573672B2 (en) 2010-11-04
TWI336212B (en) 2011-01-11
JP2006236947A (en) 2006-09-07
KR20060095494A (en) 2006-08-31
US20120112234A1 (en) 2012-05-10
TW200631466A (en) 2006-09-01
US8129712B2 (en) 2012-03-06

Similar Documents

Publication Publication Date Title
CN1832195A (en) Organic el panel
CN1717135A (en) Electroluminescence panel
KR102539570B1 (en) Organic light emitting diodes display
KR101727668B1 (en) Organic light emitting diode display
CN1604708A (en) Organic el element and organic EL panel
CN1501753A (en) Organic electroluminescence display device and manufacturing method thereof
CN1638581A (en) Display device and method and apparatus for manufacturing display device
US20060108580A1 (en) Organic EL device
CN1551687A (en) Shadow mask for fabricating organic electroluminescent device
CN1713789A (en) Color organic EL display and fabrication method thereof
CN1711001A (en) Organic light emitting display device and method of fabricating the same
CN1738495A (en) Organic electroluminescent display panel and production method thereof
CN1744784A (en) Display unit and manufacturing method thereof
CN1638547A (en) Method for manufacturing display device
CN1717137A (en) Lighting device
CN1575063A (en) Laminated structure, and manufacturing method, display device, and display unit employing same
US20180083227A1 (en) Organic light-emitting diode display device including a thin film encapsulation layer
KR100651936B1 (en) Organic Electroluminescence of Top-Emission Type and Fabrication Method for the same
CN1947464A (en) Light-emitting display
CN1725921A (en) Organic electroluminescent display device and method for fabricating the same
CN1273760A (en) Electroluminescent display
KR102122335B1 (en) Organic light emitting diode display device
CN1941402A (en) Electroluminescent device
CN1543280A (en) Electroluminescent display device
JP2012038555A (en) Organic el display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant