CN103811669B - Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same - Google Patents
Organic light emitting device, organic light emitting diode display apparatus and method of manufacturing the same Download PDFInfo
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- CN103811669B CN103811669B CN201210445848.6A CN201210445848A CN103811669B CN 103811669 B CN103811669 B CN 103811669B CN 201210445848 A CN201210445848 A CN 201210445848A CN 103811669 B CN103811669 B CN 103811669B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000010410 layer Substances 0.000 claims description 332
- 239000012044 organic layer Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 239000011368 organic material Substances 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 230000000007 visual effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- -1 indium tin metal oxide Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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Abstract
The invention discloses an organic light-emitting device, an organic light-emitting diode display device and a manufacturing method, and relates to the field of semiconductor manufacturing. The organic light emitting diode display device includes a substrate, a plurality of pixel units formed on the substrate, each of the pixel units including: a reflective electrode formed on the substrate; a planarized first conductive layer formed on the reflective electrode; an organic light emitting layer formed on the planarized first conductive layer; and a second conductive layer formed on the organic light emitting layer; wherein the reflective electrode is patterned such that a distance from a surface thereof to the second conductive layer gradually increases from a middle portion to an edge portion of the reflective electrode; the first conducting layer is a transparent conducting layer, the second conducting layer is a semitransparent conducting layer, and the pixel units correspond to the reflecting electrodes one to one. The invention improves the brightness of the large observation angle position and reduces the spectrum blue shift of the large observation angle position.
Description
Technical field
The present invention relates to optoelectronic semiconductor and manufacture field, particularly relate to a kind of organic luminescent device, organic light emission
Diode display and manufacture method.
Background technology
Organic luminescent device (OLED), owing to its voltage requirements is low and power saving efficiency is high, adds that reaction is fast, heavy
The features such as amount is light, thickness is thin, simple structure, low cost obtain extensively application in illumination and display field.
Active matrix driving organic luminescent device (AMOLED) is that each pixel is equipped with the polysilicon with switching function
Thin film transistor (TFT) (P-Si TFT), and each pixel is equipped with a charge storage capacitance, drives organic
Optical device carries out luminescence.Owing to active matrix driving organic luminescent device belongs to static drive mode, there is storage effect
Should, 100% load driving can be carried out, this driving is not limited by scan electrode number, can be only to each pixel
The vertical selective control that carries out, therefore, active matrix driving organic luminescent device is easily achieved high-resolution and coloration,
It it is the important development direction of organic luminescent device.
At present, increasing active matrix driving organic luminescent device uses emission structure at top, and this structure has
The superior functions such as excitation is more preferably, aperture opening ratio is higher, the life-span is longer.Fig. 1 is that existing top emitting is active to be driven
The structural representation of dynamic organic luminescent device.As it is shown in figure 1, top emitting active matrix driving organic luminescent device bag
Include glass substrate 11, form polycrystalline SiTFT 12 on a glass substrate, cover described polysilicon thin
The planarization layer 13 of film transistor 12, is formed on planarization layer 13 and through described planarization layer 13 and institute
State polycrystalline SiTFT 12 connect reflection anode 14, the luminescent layer 15 being formed in reflection anode 14,
The semitransparent conductive layer 16 being formed on luminescent layer, the cushion 17 being formed in semitransparent conductive layer 16 with
And form packaged glass layer 18 on the buffer layer.Luminescent layer 15 is when stimulated luminescence, and a part of light is directly worn
Semitransparent conductive layer 16 is after top-emission, a part of light emission to the reflection anode of bottom thoroughly, by the most anti-
It is shot through semitransparent conductive layer 16 thus from top-emission.Certainly, when light arrives the semitransparent conductive layer at top,
Some light can be reflected, and thus, the semitransparent conductive layer at top actually forms with the reflection anode of bottom
One partially reflective micro-cavity structure of light.
But, in existing top emitting active matrix driving OLED structure, because light is at device inside
Transmission mode different, its spectrum is the narrowest, and, along with view angle increases, brightness tapers into, spectrum by
Blue shift gradually occurs.
Summary of the invention
The technical problem to be solved be a kind of organic luminescent device is proposed, Organic Light Emitting Diode shows
Showing device and manufacture method, make described organic luminescent device and organic LED display device have wider
Visual angle, overcome along with view angle increase, brightness tapers into, and spectrum engenders the defect of blue shift.
The invention discloses a kind of organic luminescent device, it is characterised in that described organic luminescent device includes:
Substrate；The reflecting electrode being formed on substrate；First conductive layer of the planarization being formed on reflecting electrode；
It is formed at the organic luminous layer on the first conductive layer of described planarization；And be formed on organic luminous layer
Second conductive layer；
Described reflecting electrode be patterned immediately so that its surface to the distance of described second conductive layer by described reflection
The mid portion of electrode is gradually increased to marginal portion；
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
Described reflecting electrode and described organic luminescent device one_to_one corresponding.
Preferably, described reflecting electrode is patterned immediately so that cross section is triangle, trapezoidal, arc, ladder
Shape or a combination thereof.
Preferably, described substrate includes patterned organic material layer, and described reflecting electrode is described for being formed at
The metal level of patterned organic material layer.
Preferably, described organic luminous layer includes that order is stacked on the hole injection layer on the first conductive layer, sky
Cave transport layer, light-emitting layer, electron transfer layer and electron injecting layer, the first conductive layer of described planarization
For anode electrode, described second conductive layer is cathode electrode.
Preferably, the material of the first conductive layer of described planarization is ITO, IZO, ZnO or a combination thereof, institute
The material stating the second conductive layer is Ag, Mg or a combination thereof.
Preferably, described organic luminous layer includes that order is stacked on the electron injecting layer on the first conductive layer, electricity
Sub-transport layer, light-emitting layer, hole transmission layer and hole injection layer, the first conductive layer of described planarization
For cathode electrode, described second conductive layer is anode electrode.
Preferably, the material of the first conductive layer of described planarization is Ag, Mg or a combination thereof, and described second leads
The material of electric layer is Ag, Mg or a combination thereof.
Preferably, the material of described reflecting electrode is Ag, Al or a combination thereof.
The invention also discloses a kind of organic LED display device, including substrate, be formed at described lining
Multiple pixel cells at the end, each described pixel cell includes: form reflecting electrode over the substrate；
First conductive layer of the planarization being formed on reflecting electrode；It is formed on the first conductive layer of described planarization
Organic luminous layer；And the second conductive layer being formed on described organic luminous layer；
Wherein, described reflecting electrode be patterned immediately so that its surface to the distance of described second conductive layer by institute
The mid portion stating reflecting electrode is gradually increased to marginal portion.
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And described pixel cell and described reflecting electrode one_to_one corresponding.
Preferably, described substrate includes substrate, the multi-strip scanning line being formed on described substrate, sweeps with described
Retouching a plurality of data lines that line insulation intersects, described pixel cell is formed at adjacent scanning lines and adjacent data line institute
In the pixel region enclosed.
Preferably, described organic LED display device also includes being formed at driving in described pixel region
Galvanic electricity road, to drive the organic luminous layer in described pixel cell luminous.
Preferably, described reflecting electrode is patterned immediately so that cross section is triangle, trapezoidal, arc, ladder
One in shape or a combination thereof.
Preferably, described substrate includes patterned organic material layer, and described reflecting electrode is described for being formed at
The metal level of patterned organic material layer.
Preferably, described organic luminous layer includes that order is stacked on the hole injection layer on the first conductive layer, sky
Cave transport layer, light-emitting layer, electron transfer layer and electron injecting layer, described first conductive layer is anode electricity
Pole, described second conductive layer is cathode electrode.
Preferably, the material of described first conductive layer is ITO, IZO, ZnO or a combination thereof, and described second leads
The material of electric layer is Ag, Mg or a combination thereof.
Preferably, described organic luminous layer includes that order is stacked on the electron injecting layer on the first conductive layer, electricity
Sub-transport layer, light-emitting layer, hole transmission layer and hole injection layer, described first conductive layer is negative electrode electricity
Pole, described second conductive layer is anode electrode.
Preferably, the material of described first conductive layer is Ag, Mg or a combination thereof, the material of described second conductive layer
Material is Ag, Mg or a combination thereof.
Preferably, the material of described reflecting electrode is Ag, Al or a combination thereof.
The invention also discloses the manufacture method of a kind of organic LED display device, it is characterised in that:
Thering is provided a substrate, described substrate to include substrate, the multi-strip scanning line being formed on described substrate, with institute
State a plurality of data lines that scan line insulation intersects, be formed at adjacent scanning lines and pixel that adjacent data line is enclosed
LED driving circuit in region, covers the organic layer of described substrate surface；
Graphical described organic layer so that described patterned organic surface is to described base in pixel region
The distance of plate is gradually reduced to marginal portion by the mid portion of described organic layer；
The reflecting electrode of patterning is formed at described patterned organic surface；
Described reflecting electrode is formed patterning and the first conductive layer of planarization；
Described first conductive layer is formed the organic luminous layer of patterning；
Described organic luminous layer is formed the second conductive layer；
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And described pixel cell and described reflecting electrode one_to_one corresponding.
Preferably, described patterned organic layer is formed cross section is triangle, trapezoidal, arc, ladder
Shape or a combination thereof.
Preferably, the step of patterned described organic layer includes:
Remove part organic layer by photoetching thus limit the region of reflecting electrode to be formed；
The region of reflecting electrode to be formed described in after photoetching is patterned, forms patterned organic layer.
Preferably, the described region to reflecting electrode to be formed described in after photoetching is patterned, and forms figure
The step of the organic layer of shape includes:
Organic layer after photoetching is toasted 1-2 hour under 200-300 degrees celsius.
Preferably, the described step forming organic luminous layer on the first conductive layer of described planarization includes:
Order stacking hole injection layer, hole transmission layer, light-emitting layer, electric transmission on the first conductive layer
Layer and electron injecting layer.
Preferably, the described step forming organic luminous layer on the first conductive layer of described planarization includes:
Order stacking electron injecting layer, electron transfer layer, light-emitting layer, hole transport on the first conductive layer
Layer and hole injection layer.
The present invention passes through graphical reflecting electrode so that reflecting electrode is formed as prominent in whole luminous open area
The shape risen, changes the micro-cavity structure of organic luminescent device so that the light launched via this device has more
Big visual angle, improves the brightness of big view angle position, reduces the blue spectral shift of big view angle position.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing top emitting active matrix driving organic luminescent device；
Fig. 2 is existing top emitting active matrix driving organic luminescent device microcavity principle schematic；
Fig. 3 is the top emitting active matrix driving organic luminescent device microcavity principle schematic of the present invention；
Fig. 4 is the structural representation of the organic luminescent device that first embodiment of the invention provides；
Fig. 5 is the structural representation of the organic luminescent device that second embodiment of the invention provides；
Fig. 6 is the structural representation of the organic luminescent device that third embodiment of the invention provides；
Fig. 7 is the structural representation of the organic luminescent device that fourth embodiment of the invention provides；
Fig. 8 is the cross section structure signal of the organic LED display device that fifth embodiment of the invention provides
Figure；
Fig. 9 is the top surface structure signal of the organic LED display device that fifth embodiment of the invention provides
Figure；
Figure 10 is the stream of the manufacture method of the organic LED display device that sixth embodiment of the invention provides
Cheng Tu；
Figure 11 a-d is organic in manufacture process corresponding to manufacture method that sixth embodiment of the invention provides
The sectional view of optical diode display device.
Detailed description of the invention
Further illustrate technical scheme below in conjunction with the accompanying drawings and by detailed description of the invention.
Fig. 2 is existing top emitting active matrix driving organic luminescent device microcavity principle schematic.As in figure 2 it is shown,
In the microcavity that upper surface S becomes with lower surface X-shaped, the light launched from light emission point G is incident with angle, θ
To the some C of upper surface, part anaclasis injection upper surface S, the some F of part luminous reflectance to lower surface again
Reflex to refraction injection after the some D of upper surface.In such microcavity, visual angle is actually the folding of light
Firing angle, it is actually directly proportional to incidence angle θ.And, the optical length of incidence angle θ and microcavity and
Optical wavelength, i.e. the optical length L ' between upper surface S and lower surface X exists following relation:
Wherein, optical length L ' is multiplied by medium refraction index equal to physical length L.λ is the wavelength of light, and m is
The mould of light, Φ reflects the phase shift caused by light in upper and lower surface.
Above-mentioned formula (1) is had to understand, in a microcavity optical length L ' timing, due to incidence angle θ and visual angle
Being directly proportional, therefore, along with visual angle increases, optical wavelength can diminish generation blue shift.
Fig. 3 is the top emitting active matrix driving organic luminescent device microcavity principle schematic of the present invention.The present invention's
Principle is at whole microcavity, the reflecting surface of the lower surface of microcavity is set to overshooting shape, i.e. make lower surface
Distance L to described upper surface is gradually increased to marginal portion at the mid portion of microcavity.Thus, light schoolmate
The mid portion that degree L ' is also rendered as from microcavity is gradually increased to marginal portion, thus, as it is shown on figure 3, first
First, the lower surface reflection angle so arranged can launch certain change, and its light goes out after lower surface reflects
Firing angle degree is bigger.Secondly, according to above-mentioned formula (1) owing to becoming big along with visual angle, incidence angle θ becomes big, from
And cause cos θ to diminish, but, become big owing to the optical length L ' of microcavity becomes big along with angle of incidence, from
And cos θ is diminished and plays the effect of compensation so that even if become big at visual angle, in the case of incidence angle θ becomes greatly,
Optical wavelength does not changes or intensity of variation diminishes.Thus, by the reflecting surface by the lower surface of microcavity
It is set to overshooting shape at whole microcavity and i.e. can realize improve the brightness of big view angle position, reduce big
The blue spectral shift of flash ranging Angle Position.
Fig. 4 is the structural representation of the organic luminescent device that first embodiment of the invention provides.As shown in Figure 4,
The organic luminescent device 40 of the present embodiment, including: substrate 41；The reflecting electrode 42 being formed on substrate 41；
First conductive layer 43 of the planarization being formed on reflecting electrode；It is formed at the first conductive layer of described planarization
On organic luminous layer 44；And the second conductive layer 45 being formed on organic luminous layer.
Reflecting electrode 42 be patterned immediately so that its surface to described second conductive layer 45 distance by described instead
The mid portion of radio pole 42 is gradually increased to marginal portion.
Wherein, described first conductive layer 43 is transparency conducting layer, and described second conductive layer 45 is led for translucent
Electric layer, and described reflecting electrode and described organic luminescent device one_to_one corresponding.One_to_one corresponding mentioned here refers to
Be that a reflecting electrode is only set in an organic luminescent device；One reflecting electrode be only arranged at one organic
In luminescent device.
According to above-mentioned for rationale, although it will be understood by those skilled in the art that Fig. 4 is by described
Reflecting electrode 42 cross section is formed as the arc of projection, meets its surface distance to described second conductive layer by institute
State other shape that the mid portion of reflecting electrode is gradually increased to marginal portion, such as, triangle, trapezoidal,
Arc, stairstepping or a combination thereof, the most all can realize same or similar effect.
The present embodiment passes through graphical reflecting electrode so that reflecting electrode is formed as in whole luminous open area
The shape of projection, changes the micro-cavity structure of organic luminescent device so that the light launched via this device has
Bigger visual angle, improves the brightness of big view angle position, reduces the blue spectral shift of big view angle position.
Fig. 5 is the structural representation of the organic luminescent device that second embodiment of the invention provides.As it is shown in figure 5,
The organic luminescent device 50 of the present embodiment includes: substrate 51；The reflecting electrode 52 being formed on substrate 51；
First conductive layer 53 of the planarization being formed on reflecting electrode；It is formed at the first conductive layer of described planarization
On organic luminous layer 54；And the second conductive layer 55 being formed on organic luminous layer.
Reflecting electrode 52 be patterned immediately so that its surface to described second conductive layer 55 distance by described instead
The mid portion of radio pole 52 is gradually increased to marginal portion.
Wherein, described first conductive layer 53 is transparency conducting layer, and described second conductive layer 55 is led for translucent
Electric layer, and described reflecting electrode and described organic luminescent device one_to_one corresponding.
Wherein, substrate 51 includes glass substrate 511 and forms patterned organic material on a glass substrate
Layer 512.Organic material layer is patterned into required shape for lugs, meets it and leads to described second for surface
The shape that the distance of electric layer 53 is gradually increased by mid portion to marginal portion.
Reflecting electrode 52 is the metal covering the uniform thickness on described patterned organic material layer 512 surface
Layer, thus, reflecting electrode 52 has the surface configuration identical with patterned organic material layer.
According to above-mentioned for rationale, although it will be understood by those skilled in the art that Fig. 5 is by described
Reflecting electrode cross section is formed as the arc of projection, but, meet its surface distance to described second conductive layer
Other shape being gradually increased to marginal portion by the mid portion of described reflecting electrode, such as, triangle,
Trapezoidal, arc, stairstepping or a combination thereof, the most all can realize same or similar effect.
The present embodiment is by graphical by the organic material layer of substrate, thus provides for patterned reflecting electrode
Carrier, it is only necessary to the metal level forming uniform thickness on patterned organic material layer i.e. can get figure
The reflecting electrode changed, thus simplify the patterning process of reflecting electrode so that reflecting electrode prepares difficulty fall
Low.
Fig. 6 is the structural representation of the organic luminescent device that third embodiment of the invention provides.As shown in Figure 6,
The organic luminescent device 60 of the present embodiment includes: substrate 61；The reflecting electrode 62 being formed on substrate 61；
First conductive layer 63 of the planarization being formed on reflecting electrode；It is formed at the first conductive layer of described planarization
On organic luminous layer 64；And the second conductive layer 65 being formed on organic luminous layer.
Reflecting electrode 62 be patterned immediately so that its surface to described second conductive layer 65 distance by described instead
The mid portion of radio pole 62 is gradually increased to marginal portion.It is shown as circular arc in the drawings.
Wherein, described first conductive layer 63 is transparency conducting layer, and described second conductive layer 65 is led for translucent
Electric layer, and described reflecting electrode and described organic luminescent device one_to_one corresponding.
Thus, reflecting electrode 62 and translucent second conductive layer 65 are formed as micro-cavity structure, due to reflection
It is middle progressively longer to edge that electrode 62 is shaped such that the optical length of described micro-cavity structure has, such that it is able to
Compensate the blue-shifted phenomenon that visual angle change causes.
In the present embodiment, organic luminous layer 64 includes sequentially being stacked on the first conductive layer 63 on lower
Hole injection layer 641, hole transmission layer 642, light-emitting layer 643, electron transfer layer 644 and electronics
Implanted layer 645.Now, the first conductive layer 63 contacts with hole injection layer 641 as anode, the second conduction
Layer is formed on electron injecting layer 645 as negative electrode.
In a preferred embodiment of the present invention, indium tin metal oxide (ITO), indium zinc metal are used
Oxide (IZO), zinc oxide (ZnO) or a combination thereof form the first transparent conductive layer 63 as anode,
Ag, Mg or a combination thereof is used to form translucent second conductive layer 65 as negative electrode.
It will be understood by those skilled in the art that the explanation for above-mentioned material is only embodiments of the invention
One preferred implementation, it is possible to achieve for transparency conducting layer and semitransparent conductive layer and meet work function requirement
Other material can be used for manufacturing described first conductive layer 63 and the second conductive layer 65.
In a preferred embodiment of the present invention, reflecting electrode 62 uses Ag, Al or a combination thereof to be formed.
The present embodiment by using the first conductive layer as anode, the second conductive layer is as negative electrode, and be correspondingly arranged
Organic luminous layer, it is provided that the design alternative of a kind of optional wide viewing angle organic luminescent device.
Fig. 7 is the structural representation of the organic luminescent device that fourth embodiment of the invention provides.As it is shown in fig. 7,
The organic luminescent device 70 of the present embodiment includes: substrate 71；The reflecting electrode 72 being formed on substrate 71；
First conductive layer 73 of the planarization being formed on reflecting electrode；It is formed at the first conductive layer of described planarization
On organic luminous layer 74；And the second conductive layer 75 being formed on organic luminous layer.
Reflecting electrode 72 be patterned immediately so that its surface to described second conductive layer 75 distance by described instead
The mid portion of radio pole 72 is gradually increased to marginal portion.It is shown as circular arc in the drawings.
Wherein, described first conductive layer 73 is transparency conducting layer, and described second conductive layer 75 is led for translucent
Electric layer, and described reflecting electrode and described organic luminescent device one_to_one corresponding.
Thus, reflecting electrode 72 and translucent second conductive layer 75 are formed as micro-cavity structure, due to reflection
Electrode 62 is shaped such that the optical length of described micro-cavity structure is progressively longer to edge by centre, such that it is able to
Compensate the blue-shifted phenomenon that visual angle change causes.
In the present embodiment, organic luminous layer 74 includes sequentially being stacked on the first conductive layer 73 on lower
Electron injecting layer 741, electron transfer layer 742, light-emitting layer 743, hole transmission layer 744 and hole
Implanted layer 745, now, the first conductive layer 73 contacts with hole injection layer 741 as negative electrode, the second conduction
Layer is formed on electron injecting layer 745 as anode.
In a preferred embodiment of the present invention, Ag, Mg or a combination thereof thing of 10-20nm thickness are used
Metal level serve as negative electrode as the first transparent conductive layer 73, use Ag, Mg or its that thickness is bigger
Combination forms translucent second conductive layer 75 as anode.
It will be understood by those skilled in the art that the explanation for above-mentioned material is only embodiments of the invention
One preferred implementation, it is possible to achieve for transparency conducting layer and semitransparent conductive layer and meet work function requirement
Other material can be used for manufacturing described first conductive layer 73 and the second conductive layer 75.
In a preferred embodiment of the present invention, reflecting electrode 72 uses Ag, Al or a combination thereof to be formed.
The present embodiment by the inverted structure that is more of little use will be used, utilize the first conductive layer as negative electrode,
Second conductive layer is as anode, and is correspondingly arranged the stacking order of organic luminescent layer, it is provided that a kind of optional wide
The design alternative of visual angle organic luminescent device.
Fig. 8 is the cross section structure signal of the organic LED display device that fifth embodiment of the invention provides
Figure.Fig. 9 is the top surface structure signal of the organic LED display device that fifth embodiment of the invention provides
Figure.As shown in Figure 8 and Figure 9, the organic LED display device 80 of the present embodiment, including substrate 81,
Described substrate includes substrate 811, the multi-strip scanning line 812 being formed on described substrate, exhausted with described scan line
The a plurality of data lines 813 that edge intersects, adjacent scan line 812 and adjacent data line 813 are around forming a pixel
Region.
Multiple pixel cell 82 it is formed with in described pixel region on substrate 81.Pixel cell 82 is permissible
It is made up of any one organic luminescent device in the most above-mentioned first to the 5th embodiment.
Having in common that of all pixel cells 82, it includes and pixel cell reflecting electrode 821 one to one
And the first conductive layer 822 of the planarization being formed on reflecting electrode 821, organic luminous layer 823 and second
Conductive layer 824, wherein, reflecting electrode 821 is patterned immediately so that its surface is to described second conductive layer 822
Distance be gradually increased to marginal portion by the mid portion of described reflecting electrode 821.Described reflecting electrode
821, can the circular shape shown in Formation cross-section as Fig. 8, it is also possible to be formed as meeting the cross section of above-mentioned condition
For triangle, trapezoidal, arc, stairstepping or other shape of a combination thereof.One_to_one corresponding mentioned here refers to
Be that a reflecting electrode is only set in a pixel cell；One reflecting electrode is only arranged at a pixel cell
In.
Meanwhile, organic LED display device 80 also includes the drive circuit 83 being formed in pixel region,
To drive the organic luminous layer in described pixel cell luminous.
In a preferred embodiment of the present invention, described drive circuit 83 drives for polycrystalline SiTFT
Galvanic electricity road, thus so that organic LED display device 80 is formed as active matrix driving organic light-emitting diodes
Tube display device.
The present embodiment is by the most basic picture of the structure by the organic luminescent device with wide viewing angle of the present invention
Element unit, is formed as including the organic LED display device of multiple pixel cell on unified substrate,
Obtain the organic LED display device possessing wide viewing angle characteristic, overcome display device along with visual angle change
Change luminance-reduction and the defect of blue spectral shift occurs.
Figure 10 is the stream of the manufacture method of the organic LED display device that sixth embodiment of the invention provides
Cheng Tu.As shown in Figure 10, described method includes:
Step 1010, providing a substrate, described substrate to include substrate, be formed on described substrate a plurality of sweeps
Retouch line, a plurality of data lines intersected with the insulation of described scan line, it is formed at adjacent scanning lines and adjacent data line
LED driving circuit in the pixel region enclosed, covers the organic layer of described substrate surface.
In a preferred embodiment of the present invention, described organic layer is planarize substrate surface
Planarization layer, its preferred material is the refined ammonia of polyamides of toray company, the acrylic of JSR company of Japan
Deng material.
Figure 11 a shows the organic LED display device in the manufacture process corresponding to step 1010
Sectional view.As shown in fig. 11a, the substrate 111 being used for manufacturing organic LED display device 110 wraps
Include substrate 111a, scan line 111b, data wire 111c(not shown) and drive circuit 111d and organic
Layer 111e.
Step 1020, graphical described organic layer so that described patterned organic layer table in pixel region
Face is gradually reduced to marginal portion to the distance of described substrate by the mid portion of described organic layer.
Wherein, patterned layer can be formed as cross section is circular shape, it is also possible to be formed as meeting above-mentioned condition
Cross section be triangle, trapezoidal, arc, stairstepping or other shape of a combination thereof.
In a preferred embodiment of the present invention, the step of patterned described organic layer includes:
Step 1021, by photoetching remove part organic layer thus limit the region of reflecting electrode to be formed.
Figure 11 b is the cross section of the organic LED display device in the manufacture process corresponding to step 1012
Figure.As shown in figure 11b, organic layer 111e is removed a part and forms groove 112 to limit formation reflection
The region of electrode.
Step 1022, region to reflecting electrode to be formed described in after photoetching are patterned, and form figure
The organic layer changed.
Preferably, can be little by the organic layer after photoetching is toasted 1-2 under 200-300 degrees celsius
Time described organic layer is formed as cross section is arc-shaped, it is achieved it is graphical.
Figure 11 c is the cross section of the organic LED display device in the manufacture process corresponding to step 1022
Figure.As shown in fig. 11c, through overbaking, it is circular arc that described organic layer projection is formed as cross section.
Step 1030, the reflecting electrode patterned in the formation of described patterned organic surface.
In a preferred embodiment of the present invention, uniform thickness is formed at patterned organic surface
Metal level, i.e. can get patterned reflecting electrode.Its schematic diagram as illustrated in fig. 11d, patterned reflection
Electrode is to cover the metal level 113 at organic surface, and it preferably selects Ag, Al or a combination thereof thing to be material
Formed.
Step 1040, the first conductive layer that formation patterns and planarizes on described reflecting electrode.
Step 1050, on described first conductive layer, form the organic luminous layer of patterning.
Step 1060, on described organic luminous layer, form the second conductive layer.
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And described pixel cell and described reflecting electrode one_to_one corresponding.
In a preferred embodiment of the present invention, step 1040 utilize indium tin metal oxide (ITO),
Indium zinc metal-oxide (IZO), zinc oxide (ZnO) or a combination thereof form the first transparent conductive layer 63 and make
For anode, step 1060 utilizes Ag, Mg or a combination thereof to form translucent second conductive layer 65 as negative electrode.
And correspondence, step 1050 order stacking hole injection layer, hole transmission layer, light on the first conductive layer are sent out
Penetrate layer, electron transfer layer and electron injecting layer.
In another preferred embodiment of the present invention, step 1040 utilize formed 10-20nm thickness Ag,
The metal level of Mg or a combination thereof thing serves as negative electrode as the first transparent conductive layer 73.Step 1060 uses
Ag, Mg or a combination thereof that thickness is bigger form translucent second conductive layer 75 as anode.And accordingly,
Step 1050 is order stacking electron injecting layer, electron transfer layer, light-emitting layer, hole on the first conductive layer
Transport layer and hole injection layer.
It will be understood by those skilled in the art that the explanation for above-mentioned material is only embodiments of the invention
One preferred implementation, it is possible to achieve for transparency conducting layer and semitransparent conductive layer and meet work function requirement
Other material can be used for manufacturing described first conductive layer and the second conductive layer.
The present embodiment is by graphical by the organic material layer of substrate, thus provides for patterned reflecting electrode
Carrier, it is only necessary to the metal level forming uniform thickness on patterned organic material layer i.e. can get figure
The reflecting electrode changed, thus simplify the patterning process of reflecting electrode so that reflecting electrode prepares difficulty fall
Low.Meanwhile, the present embodiment offer is multiple preferred embodiment, it is provided that manufacture wide viewing angle organic light emission two
The multiple choices of pole tube display device.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for this area skill
For art personnel, the present invention can have various change and change.All institutes within spirit and principles of the present invention
Any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (24)
1. an organic luminescent device, it is characterised in that described organic luminescent device includes: substrate；Formed
Reflecting electrode on substrate；First conductive layer of the planarization being formed on reflecting electrode；It is formed at described
Organic luminous layer on first conductive layer of planarization；And the second conductive layer being formed on organic luminous layer；
Described reflecting electrode be patterned immediately so that its surface to the distance of described second conductive layer by described reflection
The mid portion of electrode is gradually increased to marginal portion；
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And a described reflecting electrode is only set in a described organic luminescent device.
Organic luminescent device the most according to claim 1, it is characterised in that described reflecting electrode is schemed
Shape is so that cross section is triangle, trapezoidal, arc, stairstepping or a combination thereof.
Organic luminescent device the most according to claim 1, it is characterised in that described substrate includes figure
The organic material layer changed, described reflecting electrode is the metal being formed at described patterned organic material layer
Layer.
Organic luminescent device the most according to claim 1, it is characterised in that described organic luminous layer bag
Include order and be stacked on the hole injection layer on the first conductive layer, hole transmission layer, light-emitting layer, electric transmission
Layer and electron injecting layer, the first conductive layer of described planarization is anode electrode, and described second conductive layer is
Cathode electrode.
Organic luminescent device the most according to claim 4, it is characterised in that the first of described planarization
The material of conductive layer is ITO, IZO, ZnO or a combination thereof, the material of described second conductive layer be Ag, Mg or
A combination thereof.
Organic luminescent device the most according to claim 1, it is characterised in that described organic luminous layer bag
Include order and be stacked on the electron injecting layer on the first conductive layer, electron transfer layer, light-emitting layer, hole transport
Layer and hole injection layer, the first conductive layer of described planarization is cathode electrode, and described second conductive layer is
Anode electrode.
Organic luminescent device the most according to claim 6, it is characterised in that the first of described planarization
The material of conductive layer is Ag, Mg or a combination thereof, and the material of described second conductive layer is Ag, Mg or a combination thereof.
Organic luminescent device the most according to claim 1, it is characterised in that the material of described reflecting electrode
Material is Ag, Al or a combination thereof.
9. an organic LED display device, including substrate, forms multiple pictures over the substrate
Element unit, each described pixel cell includes: form reflecting electrode over the substrate；It is formed at reflection
First conductive layer of the planarization on electrode；It is formed at the organic light emission on the first conductive layer of described planarization
Layer；And the second conductive layer being formed on described organic luminous layer；
Wherein, described reflecting electrode be patterned immediately so that its surface to the distance of described second conductive layer by institute
The mid portion stating reflecting electrode is gradually increased to marginal portion；
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And a described reflecting electrode is only set in a described pixel cell.
Organic LED display device the most according to claim 9, it is characterised in that described
Substrate includes substrate, the multi-strip scanning line being formed on described substrate, intersects many with the insulation of described scan line
Data line, in the pixel region that described pixel cell is formed at adjacent scanning lines and adjacent data line is enclosed.
11. organic LED display devices according to claim 10, it is characterised in that described
Organic LED display device also includes the drive circuit being formed in described pixel region, to drive
State the organic luminous layer in pixel cell luminous.
12. organic LED display devices according to claim 9, it is characterised in that described
Reflecting electrode is patterned immediately so that cross section is the one in triangle, trapezoidal, arc, stairstepping or its group
Close.
13. organic LED display devices according to claim 9, it is characterised in that described
Substrate includes patterned organic material layer, and described reflecting electrode is for being formed at described patterned organic material
The metal level on layer surface.
14. organic LED display devices according to claim 9, it is characterised in that described
Organic luminous layer includes that order is stacked on the hole injection layer on the first conductive layer, hole transmission layer, light emission
Layer, electron transfer layer and electron injecting layer, described first conductive layer is anode electrode, described second conduction
Layer is cathode electrode.
15. organic LED display devices according to claim 14, it is characterised in that described
The material of the first conductive layer is ITO, IZO, ZnO or a combination thereof, the material of described second conductive layer be Ag,
Mg or a combination thereof.
16. organic LED display devices according to claim 9, it is characterised in that described
Organic luminous layer includes that order is stacked on the electron injecting layer on the first conductive layer, electron transfer layer, light emission
Layer, hole transmission layer and hole injection layer, described first conductive layer is cathode electrode, described second conduction
Layer is anode electrode.
17. organic LED display devices according to claim 16, it is characterised in that described
The material of the first conductive layer of planarization is Ag, Mg or a combination thereof, the material of described second conductive layer be Ag,
Mg or a combination thereof.
18. organic LED display devices according to claim 9, it is characterised in that described
The material of reflecting electrode is Ag, Al or a combination thereof.
The manufacture method of 19. 1 kinds of organic LED display devices, it is characterised in that:
Thering is provided a substrate, described substrate to include substrate, the multi-strip scanning line being formed on described substrate, with institute
State a plurality of data lines that scan line insulation intersects, be formed at adjacent scanning lines and pixel that adjacent data line is enclosed
LED driving circuit in region, covers the organic layer of described substrate surface；
Graphical described organic layer so that described patterned organic surface is to described base in pixel region
The distance of plate is gradually reduced to marginal portion by the mid portion of described organic layer；
The reflecting electrode of patterning is formed at described patterned organic surface；
Described reflecting electrode is formed patterning and the first conductive layer of planarization；
Described first conductive layer is formed the organic luminous layer of patterning；
Described organic luminous layer is formed the second conductive layer；
Wherein, described first conductive layer is transparency conducting layer, and described second conductive layer is semitransparent conductive layer,
And in the described pixel region on substrate, form multiple pixel cell, only arrange in a described pixel cell
One described reflecting electrode.
The manufacture method of 20. organic LED display devices according to claim 19, its feature
Be, described patterned organic layer be formed cross section be triangle, trapezoidal, arc, stairstepping or its
Combination.
The manufacture method of 21. organic LED display devices according to claim 19, its feature
Being, the step of patterned described organic layer includes:
Remove part organic layer by photoetching thus limit the region of reflecting electrode to be formed；
The region of reflecting electrode to be formed described in after photoetching is patterned, forms patterned organic layer.
The manufacture method of 22. organic LED display devices according to claim 21, its feature
Being, the described region to reflecting electrode to be formed described in after photoetching is patterned, and is formed patterned
The step of organic layer includes:
Organic layer after photoetching is toasted 1-2 hour under 200-300 degrees celsius.
The manufacture method of 23. organic LED display devices according to claim 19, its feature
Being, the described step forming organic luminous layer on the first conductive layer of described planarization includes:
Order stacking hole injection layer, hole transmission layer, light-emitting layer, electric transmission on the first conductive layer
Layer and electron injecting layer.
The manufacture method of 24. organic LED display devices according to claim 19, its feature
Being, the described step forming organic luminous layer on the first conductive layer of described planarization includes:
Order stacking electron injecting layer, electron transfer layer, light-emitting layer, hole transport on the first conductive layer
Layer and hole injection layer.
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| CN104319352B (en) * | 2014-11-13 | 2018-02-13 | 京东方科技集团股份有限公司 | A kind of top emitting white light OLED device and preparation method thereof, display device |
| KR102626853B1 (en) * | 2015-10-30 | 2024-01-18 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| KR20180076857A (en) * | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device |
| CN107357076A (en) * | 2017-08-16 | 2017-11-17 | 深圳市华星光电半导体显示技术有限公司 | Transmitting/reflecting LCD and preparation method thereof |
| CN110931650A (en) * | 2019-11-22 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode device, display panel and preparation method of display panel |
| CN112687548B (en) * | 2020-12-25 | 2024-05-24 | 光华临港工程应用技术研发(上海)有限公司 | Preparation method and structure of transferable flexible interconnection structure |
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