CN113809267B - Display panel and vehicle-mounted display device - Google Patents

Display panel and vehicle-mounted display device Download PDF

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Publication number
CN113809267B
CN113809267B CN202111096404.1A CN202111096404A CN113809267B CN 113809267 B CN113809267 B CN 113809267B CN 202111096404 A CN202111096404 A CN 202111096404A CN 113809267 B CN113809267 B CN 113809267B
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layer
light
thickness
display panel
conductive
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CN113809267A (en
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张玉春
仲树栋
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Beijing Zenithnano Technology Co Ltd
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Beijing Zenithnano Technology Co Ltd
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Priority to CN202111096404.1A priority Critical patent/CN113809267B/en
Priority to EP21946276.9A priority patent/EP4174838B1/en
Priority to PCT/CN2021/123152 priority patent/WO2023039964A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60K—ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES; ARRANGEMENT OR MOUNTING OF PLURAL DIVERSE PRIME-MOVERS IN VEHICLES; AUXILIARY DRIVES FOR VEHICLES; INSTRUMENTATION OR DASHBOARDS FOR VEHICLES; ARRANGEMENTS IN CONNECTION WITH COOLING, AIR INTAKE, GAS EXHAUST OR FUEL SUPPLY OF PROPULSION UNITS IN VEHICLES
    • B60K35/00—Instruments specially adapted for vehicles; Arrangement of instruments in or on vehicles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R16/00—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for
    • B60R16/02—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60K—ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES; ARRANGEMENT OR MOUNTING OF PLURAL DIVERSE PRIME-MOVERS IN VEHICLES; AUXILIARY DRIVES FOR VEHICLES; INSTRUMENTATION OR DASHBOARDS FOR VEHICLES; ARRANGEMENTS IN CONNECTION WITH COOLING, AIR INTAKE, GAS EXHAUST OR FUEL SUPPLY OF PROPULSION UNITS IN VEHICLES
    • B60K35/00—Instruments specially adapted for vehicles; Arrangement of instruments in or on vehicles
    • B60K35/20—Output arrangements, i.e. from vehicle to user, associated with vehicle functions or specially adapted therefor
    • B60K35/21—Output arrangements, i.e. from vehicle to user, associated with vehicle functions or specially adapted therefor using visual output, e.g. blinking lights or matrix displays
    • B60K35/22—Display screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Transportation (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application discloses display panel and on-vehicle display device. The display panel comprises a first electrode layer; a light emitting layer group provided on the first electrode layer; a light extraction layer disposed on the light emitting layer group, the light extraction layer being in a light extraction direction of the display panel and serving as a second electrode layer, and an encapsulation layer disposed on the light extraction layer. The refractive index of the light extraction layer is smaller than that of the packaging layer, so that the anti-reflection of light emitted by the light emitting layer group is realized. In the display panel, the light extraction layer and the packaging layer form an anti-reflection layer, so that light emitted by the light emitting layer group can be emitted as far as possible, and the brightness of the display panel is improved.

Description

Display panel and vehicle-mounted display device
Technical Field
The present application relates to the field of display, and in particular, to a display panel. The present application also relates to an in-vehicle display device comprising such a display panel.
Background
OLEDs (organic light emitting diodes) are commonly used in flexible display devices due to their good display effect and low power consumption. Unlike LED display panels that are illuminated using backlighting, OLED display panels are self-emissive, and typically include a cathode, an electron transport layer, a light emitting layer (or OLED light emitting device), a hole transport layer, an anode, and the like. In order to improve the brightness of the OLED display panel, it is necessary to extract light emitted from the OLED light emitting device as much as possible from the group of layers of the OLED display panel.
Disclosure of Invention
To solve the above problem, a first aspect of the present invention provides a display panel. The display panel includes: a first electrode layer; a light emitting layer group provided on the first electrode layer; a light extraction layer disposed on the light emitting layer group, the light extraction layer being in a light emission direction of the display panel and serving as a second electrode layer, and an encapsulation layer disposed on the light extraction layer. The refractive index of the light extraction layer is smaller than that of the packaging layer, so that the anti-reflection of light emitted by the light emitting layer group is realized.
In one embodiment, the refractive index of the light extraction layer is between 1.15 and 1.35, the refractive index of the encapsulation layer is between 1.4 and 1.8, the thickness of the light extraction layer is between 50nm and 200nm, and the thickness of the encapsulation layer is between 23 μm and 1 mm.
In one embodiment, the light extraction layer comprises: a first conductive layer in contact with the set of light emitting layers, a first protective layer in contact with the first conductive layer, a second conductive layer in contact with the first protective layer, a second protective layer in contact with the second conductive layer, and a light exit layer in contact with the second protective layer, the first conductive layer having a first refractive index n1 and a first thickness d1, the first protective layer having a second refractive index n2 and a second thickness d2, the second conductive layer having a third refractive index n3 and a third thickness d3, the second protective layer having a fourth refractive index n4 and a fourth thickness d4, the light exit layer having a fifth refractive index n5 and a fifth thickness d5, wherein n1 is between 1.8-2.1 and d1 is between 20nm-80 nm; n2 is between 0.1 and 5, d2 is between 0.5nm and 10 nm; n3 is between 0.1 and 1.5, d3 is between 5nm and 50 nm; n4 is between 1.3 and 2.1, d4 is between 0.5nm and 10 nm; n5 is between 1.8 and 2.4, d5 is between 20nm and 80 nm.
In one embodiment, the first conductive layer comprises a conductive metal oxide, the first protective layer comprises one of a metal, a conductive metal oxide, and a conductive metal nitride; the second conductive layer comprises a conductive material and a metal oxide and/or a metal nitride; the second protective layer comprises one of non-metal oxide, metal nitride and metal oxide; the main body of the light exit layer includes one of an oxide, a nitride, a sulfide, a fluoride, and a carbide of a nonmetal.
In one embodiment, the material of the first conductive layer is selected from In 2 O 3 、SnO 2 One of ZnO, ITO, TZO, AZO, ITiO, IZTO and FTO; the material of the first protective layer is selected from Ti, Ni, Cr, Al, NiCr, TiN, ZnO, TiO 2 、SnO 2 、SiO 2 、Nb 2 O 5 、Ta 2 O 5 、Si 3 N 4 One of (1); the conductive material of the second conductive layer is selected from one of Ag, Cu, Al, Mo, an Ag alloy, a Cu alloy, an Al alloy and a Mo alloy, and also contains inclusions formed by oxides and/or nitrides of the conductive material of the second conductive layer; the material of the second protective layer is selected from TiN, ZnO and TiO 2 、SnO 2 、SiO 2 、Si 3 N 4 One of AZO, IZO and YZO; the light is emittedThe material of the bulk of the layer is selected from TiO 2 、SnO 2 、ZnO、Nb 2 O 5 、Ta 2 O 5 、Si 3 N 4 、ZnS，SiO 2 、Al 2 O 3 MgF, MgS, SiC, AZO, GZO, TiN and YZO.
In one embodiment, the first electrode layer is a cathode having a light reflection effect, the second electrode layer is an anode, and the group of light emitting layers includes an electron transport layer in contact with the cathode, a hole transport layer in contact with the anode, and an excitation layer between the electron transport layer and the hole transport layer; a part of light emitted from the light emitting layer group passes through the light extraction layer and the package layer and is emitted, and another part of light is reflected by the first electrode layer and then passes through the light emitting layer group, the light extraction layer, and the package layer and is emitted.
In one embodiment, the reflective layer includes a metal layer in contact with the group of light emitting layers, and a metal alloy layer in contact with the metal layer.
In one embodiment, the material of the metal layer is one of Ag, Al, Mo, Cu and In; the metal alloy layer is an alloy of the material of the metal layer.
In one embodiment, the first electrode layer is an anode, the second electrode layer is a cathode, and the light-emitting layer group includes an electron transport layer in contact with the cathode, a hole transport layer in contact with the anode, and an excitation layer between the electron transport layer and the hole transport layer.
In one embodiment, the electron transport layer is TPBi with a thickness of 75 nm; the excitation layer is Ir (ppy)2acac doped CBP with the thickness of 20 nm; the hole transport layer is TAPC, and the thickness is 40 nm.
An in-vehicle display device according to a second aspect of the present application includes the display panel according to the above.
Compared with the prior art, the beneficial effects of this application are as follows: in the display panel, the light extraction layer and the packaging layer form an anti-reflection layer, so that light emitted by the light emitting layer group can be emitted as far as possible, and the brightness of the display panel is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 schematically shows a display panel according to an embodiment of the present application.
Fig. 2 schematically shows the light path of the display panel shown in fig. 1.
Fig. 3 schematically shows the structure of the light extraction layer.
Fig. 4 schematically shows the structure of the reflective layer.
Fig. 5 schematically shows an in-vehicle display device according to the present application.
Fig. 6 schematically shows the structure of a comparative example of a display panel.
Fig. 7 schematically shows a display panel according to another embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic view of a display panel 1 of an embodiment of the present application. The display panel 1 uses a self-luminous organic light emitting material (for example, OLED) as a light source, and is suitable for an in-vehicle display device such as an instrument panel of an automobile. Fig. 5 schematically shows an in-vehicle display device 2 using such a display panel 1.
The display panel 1 may be of a top emission type (i.e., light is emitted through the cathode) or a bottom emission type (i.e., light is emitted through the anode).
The following describes the display panel 1 of the bottom emission type in detail.
As shown in fig. 1, the display panel 1 includes: a first electrode layer 400; a light emitting layer group 300 disposed on the first electrode layer 400; a light extraction layer 200 disposed on the light emitting layer group 300; an encapsulation layer 100 disposed on the light extraction layer 200. The light extraction layer 200 is in the light extraction direction of the display panel 1 (arrow a shown in fig. 1) and functions as a second electrode layer. The refractive index of the light extraction layer 200 is smaller than that of the encapsulation layer 100 to achieve anti-reflection of light emitted from the light emitting layer group 300.
In this way, when the light extraction layer 200 and the first electrode layer 400 are powered on, the light-emitting layer group 300 of the display panel 1 emits light by flowing a current. The refractive index of the light extraction layer 200 is lower than that of the encapsulation layer 100, so that in practice both the light extraction layer 200 and the encapsulation layer 100 constitute an anti-reflection layer, which further contributes to the light emitted from the light emitting layer group 300 being emitted as much as possible, thereby further improving the luminance (or quantum light emitting efficiency) of the display panel 1.
In one embodiment, the first electrode layer 400 is a cathode having a light reflecting property. The light extraction layer 200 is an anode. As shown in fig. 2, a part 311 of the light emitted from the light emitting layer group 300 passes through the light extraction layer 200 and the package layer 100 and is emitted, and another part 312 of the light is reflected by the first electrode layer 400 and then passes through the light emitting layer group 300, the light extraction layer 200 and the package layer 100 and is emitted out of the display panel 1, which helps the light emitted from the light emitting layer group 300 to be emitted as much as possible, thereby further improving the luminance of the display panel 1.
In one embodiment, the refractive index of the light extraction layer 200 is between 1.15-1.35, and the refractive index of the encapsulation layer 100 is between 1.4-1.8; accordingly, the thickness of the light extraction layer 200 is between 50nm and 200nm, and the thickness of the encapsulation layer 100 is between 23 μm and 1 mm. The inventors found that setting the light extraction layer 200 and the encapsulation layer 100 within this parameter range can more effectively emit the light emitted from the light-emitting layer group 300, and even the quantum light-emitting efficiency of the display panel 1 reaches 70% or more, which is much higher than that of the OLED display panel in the related art.
In one embodiment, the light extraction layer 200 further includes: a first conductive layer 201 in contact with the light emitting layer group 300, a first protective layer 202 in contact with the first conductive layer 201, a second conductive layer 203 in contact with the first protective layer 202, a second protective layer 204 in contact with the second conductive layer 203, and a light emitting layer 205 in contact with the second protective layer 204. That is, the first conductive layer 201, the first protective layer 202, the second conductive layer 203, the second protective layer 204, and the light exit layer 205 are stacked, and the first conductive layer 201 is in electrical contact with the light emitting layer group 300, and the light exit layer 205 is in contact with the encapsulation layer 100.
The first conductive layer 201 has a first refractive index n1 and a first thickness d1, the first protective layer 202 has a second refractive index n2 and a second thickness d2, the second conductive layer 203 has a third refractive index n3 and a third thickness d3, the second protective layer 204 has a fourth refractive index n4 and a fourth thickness d4, and the light exit layer 205 has a fifth refractive index n5 and a fifth thickness d 5. n1 is between 1.8 and 2.1, d1 is between 20nm and 80 nm; n2 is between 0.1 and 5, d2 is between 0.5nm and 10 nm; n3 is between 0.1 and 1.5, d3 is between 5nm and 50 nm; n4 is between 1.3 and 2.1, d4 is between 0.5nm and 10 nm; n5 is between 1.8 and 2.4, d5 is between 20nm and 80 nm. The inventors have found that by constructing the light extraction layer 200 as these sub-layers, the refractive index of the light extraction layer 200 can be conveniently tuned between 1.2-1.25 while maintaining the thickness of the light extraction layer 200 between 90nm and 110 nm. Thus, the light extraction layer 200 can be fitted to a wider variety of encapsulation layers 100 while keeping the quantum efficiency of the display panel 1 high.
It should be understood that the number of the sub-layers of the light extraction layer 200 may be more or less (or even one layer), as long as the thickness and the refractive index thereof can satisfy the requirement, and will not be described herein.
The first conductive layer 201 comprises a conductive metal oxide, for example, the material of the first conductive layer 201 is selected from In 2 O 3 、SnO 2 ZnO, ITO, TZO, AZO, ITiO, IZTO and FTO. In ITO, Sn 2 The weight percentage of O doping is more than 0 and less than or equal to 50 percent; in IZO, the ZnO doping weight percentage is greater than 0 and less than or equal to 50%; in AZO, Al 2 O 3 The doping weight percentage is more than 0 and less than or equal to 50 percent; in ITiO, TiO 2 Heavy dopingThe percentage amount is greater than 0 and less than or equal to 10%; in IZTO, TiO 2 The doping weight percentage is more than 0 and less than or equal to 10 percent, the doping weight percentage of ZnO is more than 0 and less than or equal to 40 percent, and in the FTO, the doping weight percentage of F is more than 0 and less than or equal to 10 percent. The inventors have found that when the above materials are used, the desired refractive index can be achieved, and the materials have good conductivity, lower resistance, and contribute to the light-emitting layer group 300 having a good light-emitting effect.
The first protective layer 202 includes one of a metal, a conductive metal oxide, and a conductive metal nitride. For example, the metal may be one of Ti, Ni, Cr, Al, and NiCr; the metal oxide can be ZnO or TiO 2 、SnO 2 、SiO 2 、Nb 2 O 5 、Ta 2 O 5 One of (1); the metal nitride can be TiN or Si 3 N 4 One kind of (1). The inventors have found that the materials selected for the first protective layer 202 not only achieve the required refractive index, but also have good oxygen resistance, which can prevent oxygen molecules from penetrating to the second conductive layer 203, thereby ensuring that the second conductive layer 203 has good conductivity. In addition, since the thickness of the first protective layer 202 is small, the metal oxide or the metal nitride also has good conductivity due to the quantum tunneling effect, which enables the light extraction layer 200 to function as an electrode.
The second conductive layer 203 includes a conductive material and inevitable metal oxide and/or metal nitride inclusions. For example, the conductive material is selected from one of Ag, Cu, Al, Mo, Ag alloy, Cu alloy, Al alloy, and Mo alloy. In a specific embodiment, In the Ag alloy layer, the weight proportion of Ag is more than 50%, and the remaining 50% may be one of metal elements such as Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi, Ni, etc.; in the Cu alloy, the weight proportion of Cu is more than 50%, and the rest 50% can be one of metal elements such as Zn, Ag, In, Pt, Pd, Au, Nb, Nd, B, Bi, Ni and the like; in the Mo alloy layer, the weight proportion of Mo is more than 80%, and the rest 20% can be one of metal elements such as Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi, Ni and the like; in the Al alloy layer, the weight ratio of Al is more than 80%, and the rest 20% can be one of metal elements such as Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi, Ni and the like. The metal oxide and/or metal nitride inclusion is formed by oxidizing and nitriding metal or alloy by introducing a small amount of oxygen and nitrogen in the process of coating the metal target. These metals or alloys have good electrical conductivity and do not weaken the electrical conductivity of second conductive layer 203 as a whole even if they contain small amounts of metal oxide and/or nitride inclusions. In addition, these metal oxide and metal nitride also improve the light transmittance of the second conductive layer 203, which contributes to the improvement of the luminance of the display panel 1.
The second protective layer 204 includes one of a non-metal oxide, a metal nitride, and a metal oxide. For example, the non-metal oxide, metal nitride, and metal oxide can be TiN, ZnO, TiO 2 、SnO 2 、SiO 2 、Si 3 N 4 . The second protective layer 204 formed of these compounds has good weather resistance and good water resistance, and the protective effect on the second conductive layer 203 is improved. Since the second protective layer 204 has a small thickness, the non-metal oxide, the metal nitride, and the metal oxide also have good conductivity due to the quantum tunneling effect, so that the second protective layer 204 has good conductivity, and the light extraction layer 200 can also serve as an electrode.
The light exit layer 205 includes one of non-metallic oxide, nitride, sulfide, fluoride, and carbide. For example, the material of the light exit layer 205 is selected from TiO 2 、SnO 2 、ZnO、Nb 2 O 5 、Ta 2 O 5 、Si 3 N 4 、ZnS，SiO 2 、Al 2 O 3 MgF, MgS, SiC, AZO, GZO, TiN and YZO. These materials have a high refractive index, which helps to meet the refractive index requirements of the light extraction layer 200. In addition, due to the quantum tunneling effect, these compounds also have appropriate conductivity, which can reduce the resistance of the light exit layer 205 (and the light extraction layer 200), contributing to the good light emitting effect of the light emitting layer group 300.
As also shown in fig. 4, the first electrode layer 400 of the display panel 1 includes a metal layer 401 and a metal alloy layer 402 in contact with the metal layer 401. The metal layer 401 is in electrical contact with the group of light emitting layers 300. Thus, the entire first electrode layer 400 has good conductivity and is suitable for use as an electrode.
In one embodiment, the metal layer 401 of the first electrode layer 400 is one of Ag, Al, Mo, Cu, and In. The metal alloy layer 402 is one of Ag alloy, Al alloy, and Mo alloy; the thickness of the film can be 5 to 300 nm. In the Ag alloy, the weight proportion of Ag is more than 50%, and the rest can be one of Ti, Li, Yb, Ir, Mg, Zn, Cu, Al, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni. In the Mo alloy, the weight proportion of Mo is more than 80%, and the rest can be one of Ti, Li, Yb, Ir, Mg, Zn, Cu, Al, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni. In the Al alloy, the weight proportion of Al is more than 80%, and the rest can be one of Ti, Li, Yb, Ir, Mg, Zn, Cu, Al, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni. The thickness of the metal alloy layer 402 may be 5 to 300 nm. The inventor finds that the surface of the metal or the alloy can be made very smooth by manufacturing the metal or the alloy into a film with the thickness of 5-300 nm, so that the light reflection performance of the first electrode layer is greatly improved, and the brightness of the display panel 1 is further improved. In addition, the metal alloy layer 402 has good oxidation resistance, which helps to protect the layers on its inside from oxidation. Also, the cost of the metal alloy layer 402 is lower than that of the metal layer 401, which contributes to reducing the cost of the display panel 1.
As also shown in fig. 1, the first electrode layer 400 is a cathode, the second electrode layer 200 is an anode, and the light emitting layer group 300 includes an electron transport layer 301 in contact with the cathode 400, a hole transport layer 302 in contact with the anode 200, and an excitation layer 303 between the electron transport layer 301 and the hole transport layer 302. In a specific embodiment, the material of the electron transport layer 301 is TPBi with a thickness of 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm. The inventors have found that by using the above materials, the interface resistance between the electron transport layer 301 and the first electrode layer 400 is small, the interface resistance between the hole transport layer 302 and the first conductive layer 201 is small, and the interface resistance between the excitation layer 303 and the electron transport layer 301 and the hole transport layer 302 is also small, which contributes to an improvement in current efficiency, thereby further improving the luminance of the display panel 1.
It is to be understood that, outside the first electrode layer 400, a substrate 500 is also provided. The substrate 500 protects other layers of the display panel 1, and the material thereof may be the same as the encapsulation layer 100, and is not described again.
Fig. 7 schematically shows the display panel 1 of the top emission structure. As shown in fig. 7, the display panel 1 includes: a substrate 500, an anode 400 formed on the substrate 500; a light emitting layer group 300 disposed on the anode 400; a light extraction layer 200 disposed on the light emitting layer group 300; an encapsulation layer 100 disposed on the light extraction layer 200. The light extraction layer 200 is in the light extraction direction of the display panel 1 (arrow B shown in fig. 7) and functions as a cathode. The light extraction layer 200 is the same as the light extraction layer of the bottom emission display panel described above, and has a refractive index smaller than that of the encapsulation layer 100, so that the light emitted from the light emitting layer group 300 is increased in reflection, and the brightness of the display panel 1 is improved.
Example 1
In the bottom emission display panel 1, the encapsulating layer 100 is a CPI with a thickness of 23 μm and a refractive index of 1.65.
In the light extraction layer 200, the first conductive layer 201 is AZO, the thickness is 40nm, and the refractive index is 2.0; the first protective layer 202 is SnO 2 The thickness is 2nm, and the refractive index is 1.9; the second conductive layer 203 is a mixture of Ag and AgO, has a thickness of 12nm and a refractive index of 0.4; the second protective layer 204 is SnO 2 The thickness is 2nm, and the refractive index is 1.9; the light exit layer 205 was AZO, 40nm thick, and 2.0 in refractive index.
In the light-emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the first electrode layer 400, the metal layer 401 is Ag; the metal alloy layer 402 is an AgMg alloy.
The optical parameters of example 1 are shown in table 1.
Example 2
In the bottom emission display panel 1, the encapsulating layer 100 was COP, and had a thickness of 50 μm and a refractive index of 1.62.
In the light extraction layer 200, the first conductive layer 201 was IZTO, 45nm in thickness, and 2.0 in refractive index; the first protective layer 202 is Cr, the thickness is 1nm, and the refractive index is 2.7; the second conducting layer 203 is a mixture of AgTi and AgTiN, the thickness is 15nm, and the refractive index is 0.5; the second protective layer 204 is ZnO, the thickness is 5nm, and the refractive index is 1.9; the light emitting layer 205 is SnO 2 The thickness was 50nm and the refractive index was 1.9.
In the light-emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the first electrode layer 400, the metal layer 401 is Ag; the metal alloy layer 402 is an AgTi alloy.
The optical parameters of example 2 are shown in table 1.
Example 3
In the bottom emission display panel 1, the encapsulating layer 100 was PET, the thickness was 100 μm, and the refractive index was 1.55.
In the light extraction layer 200, the first conductive layer 201 was FTO, the thickness was 40nm, and the refractive index was 2.0; the first protective layer 202 is Ti with a thickness of 2nm and a refractive index of 1.9; the second conductive layer 203 is Al or AlO x The mixture of (1) has a thickness of 35nm and a refractive index of 0.9; the second protective layer 204 is SnO 2 The thickness is 10nm, and the refractive index is 1.9; the light-emitting layer 205 is Nb 2 O 5 The thickness is 48nm, and the refractive index is 2.4.
In the light emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the first electrode layer 400, the metal layer 401 is Ag; the metal alloy layer 402 is an AgIn alloy.
The optical parameters of example 3 are shown in table 1.
Example 4
In the bottom emission display panel 1, the encapsulation layer 100 was PC, 75 μm thick, and 1.58 in refractive index.
In the light extraction layer 200, the first conductive layer 201 was TZO, had a thickness of 55nm and a refractive index of 1.85; the first protective layer 202 is A1, the thickness is 0.5nm, and the refractive index is 0.9; the second conductive layer 203 is Cu and CuN x 18nm in thickness and a refractive index of 0.5; the second protective layer 204 is ZnO with the thickness of 10nm and the refractive index of 2.0; the light-emitting layer 205 is TiO 2 The thickness was 30nm and the refractive index was 2.2.
In the light emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the first electrode layer 400, the metal layer 401 is Ag; the metal alloy layer 402 is an AgPdPt alloy.
The optical parameters of example 4 are shown in table 1.
Example 5
In the bottom emission display panel 1, the sealing layer 100 is made of glass, has a thickness of 0.5mm, and has a refractive index of 1.52.
In the light extraction layer 200, the first conductive layer 201 was ITO, had a thickness of 55nm and a refractive index of 2.0; the first protective layer 202 is Si 3 N 4 The thickness is 2nm, and the refractive index is 2.1; the second conductive layer 203 is AgZn and AgZnO x The mixture of (1) has a thickness of 13nm and a refractive index of 0.4; the second protective layer 204 is ZnO with the thickness of 8nm and the refractive index of 2.0; the light-emitting layer 205 is Ta 2 O 5 The thickness was 35nm and the refractive index was 2.2.
In the light emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the first electrode layer 400, the metal layer 401 is Ag; the metal alloy layer 402 is an AgYb alloy.
The optical parameters of example 5 are shown in table 1.
Example 6
In the top emission display panel 1, the sealing layer 100 is made of glass, has a thickness of 0.33mm, and has a refractive index of 1.52.
In the light extraction layer 200, the first conductive layer 201 was AZO, the thickness was 42nm, and the refractive index was 2.0; the first protective layer 202 is Si 3 N 4 The thickness is 2nm, and the refractive index is 2.1; the second conductive layer 203 is AgIn and AgInO x The mixture of (1) has a thickness of 15nm and a refractive index of 0.4; the second protective layer 204 is ZnO, the thickness is 5nm, and the refractive index is 2.0; the light exit layer 205 was TiN, 47nm thick, and 1.9 in refractive index.
In the light emitting layer group 300, the material of the electron transport layer 301 is TPBi, and the thickness is 75 nm; the hole transport layer 302 is TAPC with a thickness of 40 nm; the material of excitation layer 303 was Ir (ppy)2acac doped CBP with a thickness of 20 nm.
The optical parameters of example 6 are shown in table 1.
Comparative example
The comparative example is a bottom emitting display panel 6 manufactured using the prior art. In the display panel 6, the encapsulating layer 610 is PET, has a thickness of 50 μm, and has a refractive index of 1.55.
In the anode layer 620, the material was ITO with a thickness of 150nm and a refractive index of 2.0.
In the luminescent layer group 630, the material of the electron transport layer 631 is TPBi, and the thickness is 75 nm; hole transport layer 632 was TAPC with a thickness of 40 nm; the excitation layer 633 was made of ir (ppy)2acac doped CBP with a thickness of 20 nm.
In the cathode layer 640, the metal alloy is AgMg.
The optical parameters of the comparative examples are shown in table 1.
TABLE 1
Figure BDA0003266884740000121
As shown in table 1, the quantum luminous efficiencies of the display panels according to embodiments 1 to 6 of the present application are high, all being above 70%, while the quantum luminous efficiencies of the display panels of the related art are around 60%, which indicates that the luminance of the display panel according to the present application is higher.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (9)

1. A display panel, comprising:
a first electrode layer;
a light emitting layer group provided on the first electrode layer;
a light extraction layer provided on the light emitting layer group, the light extraction layer being in a light emission direction of the display panel and serving as a second electrode layer, an
An encapsulation layer disposed on the light extraction layer;
the refractive index of the light extraction layer is smaller than that of the packaging layer, so that the anti-reflection of light emitted by the light emitting layer group is realized;
the refractive index of the light extraction layer is between 1.15 and 1.35, the refractive index of the encapsulation layer is between 1.4 and 1.8, the thickness of the light extraction layer is between 50nm and 200nm, and the thickness of the encapsulation layer is between 23 mu m and 1 mm;
the light extraction layer includes:
a first conductive layer in contact with the group of light emitting layers,
a first protective layer in contact with the first conductive layer,
a second conductive layer in contact with the first protective layer,
a second protective layer in contact with the second conductive layer, and
a light exit layer in contact with the second protective layer,
the first conductive layer has a first refractive index n1 and a first thickness d1, the first protective layer has a second refractive index n2 and a second thickness d2, the second conductive layer has a third refractive index n3 and a third thickness d3, the second protective layer has a fourth refractive index n4 and a fourth thickness d4, the light exit layer has a fifth refractive index n5 and a fifth thickness d5,
wherein n1 is between 1.8 and 2.1, d1 is between 20nm and 80 nm; n2 is between 0.1 and 5, d2 is between 0.5nm and 10 nm; n3 is between 0.1 and 1.5, d3 is between 5nm and 50 nm; n4 is between 1.3 and 2.1, d4 is between 0.5nm and 10 nm; n5 is between 1.8 and 2.4, d5 is between 20nm and 80 nm.
2. The display panel according to claim 1,
the first conductive layer comprises a conductive metal oxide,
the first protective layer comprises one of metal, conductive metal oxide and conductive metal nitride;
the second conductive layer comprises a conductive material and a metal oxide and/or a metal nitride;
the second protective layer comprises one of non-metal oxide, metal nitride and metal oxide;
the light exit layer includes one of an oxide, a nitride, a sulfide, a fluoride, and a carbide of a nonmetal.
3. The display panel according to claim 2, wherein a material of the first conductive layer is selected from In 2 O 3 、SnO 2 One of ZnO, ITO, TZO, AZO, ITiO, IZTO and FTO;
the material of the first protective layer is selected from Ti, Ni, Cr, Al, NiCr, TiN, ZnO, TiO 2 、SnO 2 、SiO 2 、Nb 2 O 5 、Ta 2 O 5 And Si 3 N 4 One of (1);
the conductive material of the second conductive layer is selected from one of Ag, Cu, Al, Mo, Ag alloy, Cu alloy, Al alloy and Mo alloy, and also contains inclusions formed by oxides and/or nitrides of the conductive material of the second conductive layer;
the material of the second protective layer is selected from TiN, ZnO and TiO 2 、SnO 2 、SiO 2 、Si 3 N 4 One of AZO, IZO and YZO;
the material of the light-emitting layer is selected from TiO 2 、SnO 2 、ZnO、Nb 2 O 5 、Ta 2 O 5 、Si 3 N 4 、ZnS，SiO 2 、Al 2 O 3 MgF, MgS, SiC, AZO, GZO, TiN and YZO.
4. The display panel according to claim 3, wherein the first electrode layer is a cathode having a light reflection effect, the second electrode layer is an anode, the light emitting layer group includes an electron transport layer in contact with the cathode, a hole transport layer in contact with the anode, and an excitation layer between the electron transport layer and the hole transport layer,
a part of light emitted from the light emitting layer group passes through the light extraction layer and the package layer and is emitted, and another part of light is reflected by the first electrode layer and then passes through the light emitting layer group, the light extraction layer, and the package layer and is emitted.
5. The display panel according to claim 4, wherein the first electrode layer comprises a metal layer in contact with the group of light emitting layers, and a metal alloy layer in contact with the metal layer.
6. The display panel according to claim 5, wherein the metal layer is made of one of Ag, Al, Mo, Cu, and In;
the metal alloy layer is an alloy of the material of the metal layer.
7. The display panel according to claim 3, wherein the first electrode layer is an anode, the second electrode layer is a cathode, and the light-emitting layer group includes an electron transport layer in contact with the cathode, a hole transport layer in contact with the anode, and an excitation layer between the electron transport layer and the hole transport layer.
8. The display panel according to claim 4 or 7, wherein the electron transport layer is TPBi with a thickness of 75 nm;
the excitation layer is Ir (ppy)2acac doped CBP with the thickness of 20 nm;
the hole transport layer is TAPC, and the thickness is 40 nm.
9. An in-vehicle display apparatus characterized by comprising the display panel according to any one of claims 1 to 8.
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